Infineon Selection-Guide High Res

Power Management
Selection Guide 2011
[www.infineon.com/powermanagement] [www.infineon.com/PowerManagementICs]
We create Power Management We live Energy Efficiency

Being the leader in Energy Efficiency technologies, Infineons
products are enormously important for future energy supplies in
terms of both exploiting renewable and using energy efficiently.
Our innovative Energy Efficiency technologies are a vital contribution to a

sustainable and green life on this planet. We are ready to partner with you on
concepts for a better world and a better future.
Infineons products stand out for their reliability, their quality

excellence and their innovative and leading-edge technology.
Infineons products stand out for reliability, quality excellence and technology
leadership in power supply, power distribution and renewable energy. Our goal
is to create competitive advantages for our customers by driving innovative
power architectures, leadership in power density and enabling systems
with best cost performance ratio for notebook, server, desktop and graphic
cards, consumer SMPS, notebook adapter, PC silverbox, server power supply,
e-mobility, solar, telecom supply, industrial welding, induction cooking and
aircon.
Explore our wide offer of high-end products for your applications.
We would like to invite you to explore our broad offer of leading energy
efficient products supporting your application needs.
Infineons semiconductor solutions

for energy efficient consumption
Highly efficient solutions for consumer and computing

Infineons latest portfolio of consumer and computing products are
consequently optimized along the requirements of the next generation of
highest efficient solutions
Best choice for renewable energy applications

Regardless for which renewable solution you are looking for, Infineon
has the optimal power semiconductor devices to reduce system costs
and gain highest efficiency and lifetime
Smart appliances
High efficiency chips the perfect ingredients in the kitchen offering
consumers outstanding features and energy saving
Full range of solutions for e-cars and e-bikes

Infineon offers the complete set of power train and charging solutions
for future mobility concepts perfectly complementing the body,
convenience and safety portfolio
Contents
Applications 8
Notebook 8
Server, Desktop and Graphic Cards
Consumer SMPS
9
10
Notebook Adapter
11
PC Silverbox
12
Server Power Supply
14
Telecom Power Supply
15
E-Mobility 16
Solar 18
Industrial Welding
20
Induction Heating
21
Aircon 22
Segment Low Voltage
24
Segment High Voltage
48
Segment Silicon Carbide
60
Segment IGBT
66
Segment Power ICS
76
Packages 106
Support 168
Server, Desktop and Graphic Cards
Best Solutions for Small and Cool System Power
Highest Power Density for the Next Generation Voltage Regulation

Standards
Benchmark technologies significantly improve switching losses in power stages and drivers and
thus improve battery lifetime and system reliability. Highest efficiency at all load conditions enables
system designers to overcome thermal challenges to reach a new level of system miniaturization. Our
latest portfolio of notebook products are consequently optimized along the requirements of the next
generation notebook platforms and are easy to design in.
AC Adapter
OptiMOSTM
OptiMOSTM
DC/DC PWM
Controller
Gate Driver
DC/DC PWM
Controller
Power management system solutions based on OptiMOS technology increase Energy Efficiency in
all load conditions, reduce required PCB real estate and are easy to use. Our benchmark solutions
demonstrate dramatically increased efficiency even at high currents and high switching frequencies.
This supports system designers to achieve their efficiency, power and thermal requirements with a
reduced number of phases and thus save overall system cost.
Gate Driver
OptiMOSTM
Chip Set,
DDR, I/O
and other
peripheral
loads
Applications
Notebook
OptiMOSTM
Gate Driver
DC/DC
PWM
Controller
OptiMOSTM
DC/DC
PWM
Controller
Battery
Charger
Chip Set,
DDR, I/O
and other
peripheral
loads
OptiMOSTM
OptiMOSTM
Notebook
DC / DC
Topology
buck converter
Voltage Class
30V
Clamping,
Level Shifters
& General Purpose
CP U, GPU
Technology
New OptiMOS
Selection
recommendation
Press Esc to escape
Server, Desktop and Graphic Card

DC/ DC
< Back to overview
Topology
CP U, GPU
Voltage Class
Clamping,
Level Shifters
& General Purpose
Technology
Selection
buck converter
25V
New OptiMOS
recommendation
buck converter
30V
New OptiMOS
reference
Notebook Adapter
Cost-effective Products for Consumer SMPS
Leading-edge Technologies for Notebook Adapters
We offer a wide range of cost-effective products for consumer switch mode power supplies (SMPS). This
includes high voltage MOSFETs, control ICs and Silicon Carbide diodes for PFC and PWM stages, as well
as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends
towards continuously reducing power consumption. Especially versatile is the new CoolMOS C6/E6
family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For
synchronous rectification we recommend our OptiMOS series offering extremely low on-state resistance
and low capacitances. New control ICs support topologies such as quasi-resonant flyback and LLC.
We offer a wide range of products for notebook adapters including high voltage MOSFETs and control
ICs for both PFC and PWM stage, as well as low voltage MOSFETs for synchronous rectification. With
these products Infineon supports the trends towards a significantly higher efficiency level, especially
in partial load condition, as well as towards miniaturization of the adapter. Especially versatile is the
CoolMOS C6/E6 family which combines good efficieny with ease of use. For synchronous rectification
we recommend our OptiMOS series, offering extremely low on-state resistance and low capacitances.
New control ICs support topologies such as quasi-resonant flyback and LLC, which gain market share
within the notebook adapter segment.
Applications
Consumer SMPS
Control ICs
Control ICs
AC
Vin
Vbulk
PFC
Main Stage
Rectification
Vout
DC
AC
Consumer SMPS
Topology
Technology
AC / DC
600V
600V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
DC / DC
2 Switch-Forward DC-DC (TTF)

Flyback DC-DC
Flyback DC-DC
Flyback DC-DC
Single stage
Single stage
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
Quasi-Resonat Flyback DC-DC
Active Clamp Forward
ZVS Asum. Half-Bridge DC-DC
ITTF
ITTF
ITTF
600V
600V
600V
650V
650V
650V
650V
600V
650V
600V
650V
900V
900V
900V
800V
800V
800V
650V
600V
650V
600V
500V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS CP
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
150-250 V
OptiMOS
Recommendation
650-800V
CoolSET
Recommendation
Aux
CoolSET
Press Esc to escape
Vbulk
PFC
Selection
PFC
PFC
PFC
Rectification
10
Voltage Class
Vin
Main Stage
Rectification
Vout
DC
Microcontroller
Notebook Adapter
AC / DC
DC / DC
Rectification
Aux
< Back to overview
Topology
Voltage Class
Technology
Selection
PFC
PFC
PFC
600V
600V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
Flyback DC-DC
Flyback DC-DC
Flyback DC-DC
Single stage
Single stage
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
650V
650V
650V
650V
600V
650V
600V
650V
900V
900V
900V
800V
800V
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
ease of use
Efficiency
Recommendation
ease of use
Efficiency
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
800V
CoolMOS C3
Recommendation
Synchronous Rectification
100-120V
OptiMOS
Recommendation
CoolSET
650-800V
CoolSET
Recommendation
11
PC Silverbox
The PC Silverbox has seen a tremendous race towards higher efficiency with peak values in the range
of 92% and above. Special care is dedicated to the 20% load point. We support these trends with our
range of high voltage and low voltage MOSFETs as well as control ICs for power factor correction and
PWM. Especially versatile is the CoolMOS C6/E6 family, our latest technology in the superjunction
field, which was pioneered by Infineon Technologies. CoolMOS C6/E6 offers easy paralleling and
good efficiency even with less ideal PCB layout. The family is specifically recommended for resonant
topologies such as LLC due to its high body diode ruggedness, for hard switching topologies such as
TTF we recommend the CoolMOS C6/E6. New control ICs support continous current mode PFC and the
LLC topology. For the synchronous rectification and the DC/DC we recommend our OptiMOS series,
which combine extremely low on-state resistance and low capacitances.
PC Silverbox
Vin
Vbulk
PFC
Main Stage
Rectification
Vout
AC / DC
DC / DC

Flyback DC-DC
Flyback DC-DC
Flyback DC-DC
Single stage
Single stage
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
ITTF
ITTF
ITTF
600V
600V
600V
650V
650V
650V
650V
600V
650V
600V
650V
900V
900V
900V
800V
800V
800V
650V
600V
650V
600V
500V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS CP
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS C3
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
40-80V
OptiMOS
Recommendation
650-800V
CoolSET
Recommendation
Rectification
Press Esc to escape
Selection
ease of use
Efficiency
Recommendation
Aux
12
Technology
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
12V out +
DC DC/DC for
3.3V and 5V
AUX
Voltage Class
600V
600V
600V
Control ICs
AC
Topology
PFC
PFC
PFC
< Back to overview
CoolSET
Applications
Highest Efficiency with new Topologies for PC Silverbox
13
Telecom Power Supply
Technologies for best Efficiency in Servers
Energy Efficiency for Telecom Power Supply
The server market has seen a tremendous shift towards higher efficiency with peak values in the range
of 95% and above.
The Telecom Supply market has grown fast within the last years. High efficiency targets are required
across the entire load range starting at 20% or even at 10% load. We support these trends with our
range of high voltage MOSFETs and SiC Schottky barrier diodes as well as our low voltage MOSFET
Series for synchronous rectification and Oring.
We specifically recommend our CoolMOS C6/E6 series for hard switching applications such as
continous current mode PFC and interleaved two transistor forward. For resonant switching applications
such as phase shift ZVS or LLC, we offer a wide range of products from the CoolMOS C6/E6 series, our
latest technology in the superjunction field. For the PFC stage our third generation of SiC Schottky barrier
diode offers best cost-performance ratio in the market. For synchronous rectification we offer various
voltage classes of the OptiMOS such as OptiMOS 75V series for 12V output. With ultra-low on-state
resistance and very low capacitances the OptiMOS series will boost your design to best efficiency.
Furthermore, we offer control ICs for the CCM PFC and isolated drivers such as the 1ED and 2ED series.
Control ICs
AC
Vin
PFC
Vbulk
Control ICs
Main Stage
Oring,
Hot Swap
Rectification
Vout
DC
AC
Vin
PFC
AUX
Server Power Supply
Topology
Voltage Class
Technology
Selection
AC / DC
600V
600V
600V
600V
600V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
DC/ DC
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
ZVS Full Bridge Phase Shift
ITTF
ITTF
ITTF
650V
600V
650V
650V
600V
650V
650V
600V
650V
600V
500V
600V
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
40-80V
OptiMOS
Recommendation
650-800V
CoolSET
Recommendation
Aux
CoolSET
Main Stage
Oring,
Hot Swap
Rectification
Vout
DC
Voltage Class
Technology
Selection
AC / DC
600V
600V
600V
600V
600V
600V
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
DC / DC
LLC HB DC-DC
LLC HB DC-DC
LLC HB DC-DC
ITTF
ITTF
ITTF
ITTF
ITTF
ITTF
650V
600V
650V
650V
600V
650V
650V
600V
650V
600V
500V
600V
600V
500V
600V
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CFD2
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
CoolMOS C6/E6
CoolMOS CP
CoolMOS C6/E6
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
ease of use
Efficiency
Recommendation
Aux
Press Esc to escape
Topology
PFC
PFC
PFC
Bridgless PFC
Bridgless PFC
Bridgless PFC
Rectification
14
Vbulk
AUX
PFC
PFC
PFC
Bridgless PFC
Bridgless PFC
Bridgless PFC
Rectification
Applications
Server Power Supply
< Back to overview
40-200V
OptiMOS
Recommendation
CoolSET
650-800V
CoolSET
Recommendation
15
Best Solutions for Battery Charger
Best Solution for Battery Management
To recharge the battery of an electric car, a charger is needed. In cars with on-board chargers the batteries
can be recharged by plugging them into a standard power outlet at home. Battery charging via the power
grid requires a flexible switching structure in order to handle the different voltage levels and available power
existing in different countries. Because charging time is a very important factor for most motorists, on-board
chargers have to be very efficient so that they are as small and light as possible. A long-term trend is towards
bi-directional charger functions for not only drawing current from the grid but feeding excess energy back into
it. Infineons comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors,
power modules, etc.) lends itself perfectly to compact charging units. The products also function at high
switching frequencies for use in small and light charger designs. Our products in this sector include MOSFETs:
CoolMOS and the flexible Easy 1B/2B power modules for overnight low-amp charging, HybridPACK1 for
fast charging with high amps and high-performance 16- and 32-bit microcontroller solutions.
The Battery Management System (BMS) controls battery charge and discharge. An intelligent battery
management system is necessary to lengthen battery life, which reduces the vehicle cost over its
entire lifetime. The system constantly controls the functionality and state of charge of the battery cells.
As they age, the storage capacity of the individual battery cells may lessen at a different speed for
each cell. The challenge is to optimize cell utilization. Circuits to test the cells, and active balancing
of the cells during the charging and discharging process enable the battery life and cruising range
to be effectively lengthened. Our solution for active cell balancing increases usable battery capacity
by over 10 percent. The companys microcontrollers and sensors monitor functionality, charge and
depth of discharge. These include the 8-bit XC886CM microcontroller family, the 16/32-bit XC22xx
microcontroller family, the OptiMOS low-voltage MOSFETs, the TLE 6250/51 CAN transceivers as well
as the TLE 6389-2GV and TLE 42994GM controllers.
AC/DC Battery Charger
Battery Management
IPx65RxxxCFDA
1ED020I12FA
Applications
E-Mobility
Private CAN
L1
RFI
Filter
PFC
DC/DC
Converter
IPx65RxxxCFDA
UCC27322-DGN
IDP 23E60
Battery Block Slave
Battery Master
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
16/32-bit Microcontroller
XC2267-96F66L
TLE 6250G
TLE 42994
Battery Block Slave
Main Switch
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
TLE 4906K
TLE 4998
IKP 20N60T
2x IKW 75N60T
XC27xx
L2
Power
(grid)
RFI
Filter
PFC
DC/DC
Converter
Battery
Management
L3
N
PFC
L1
L2
Isolation
L3
16/32-bit
MCU
XC27xx
DC/DC
Converter
I/V Measurement
RFI
Filter
Control + Display
Ecar (Battery charger)
16
CAN
Topology
Voltage
Technology
Selection
Ecar (Battery management)
AC / DC
650V
650V
CoolMOS CFDA
CoolMOS CFDA
Recommendation
Recommendation
Main Switch
DC / DC
ZVS Phase Shifted Full Bridge

LLC Converter
650V
650V
CoolMOS CFDA
CoolMOS CFDA
Recommendation
Recommendation
Battery Block Slave
Microcontroller XC27xx
Recommendation
150400V
XC886CM
6x IPG 20N04S4L-08
IPD 70N03S4L
IPD 70N10S3L
TLE 6250G
TLE 6389-2GV
Bridgeless converter
Totem Pole
Control Board
Battery Block Slave
Isolation
AC/DC
(15V)
Public CAN
Press Esc to escape
< Back to overview
Topology
Voltage
Technology
Selection
high power high current
600V
IGBT Trenchstop
Recommendation
step up step down
30V
40V
100V
OptiMOS
OptiMOS
OptiMOS
Recommendation
Recommendation
Recommendation
17
Solar
Performance Products for Highest Inverter Efficiencies
In 2010 Solar Power experienced significant growth worldwide. At the end of 2008 the world`s
cumulative installed photovoltaic capacity approached 16 GW, in 2009 it reached 23 GW. In 2010,
almost 40 GW are installed globally and produce around 50 TWh of electricity every year. While the EU
has dominated the world market, the fastest Solar Power growth is expected to continue in China and
India, followed by South-East Asia, Latin America and the MENA countries.*
Applications
Example:
SOLAR Microinverter
2x Line Frequency Halfsine
output tracking line Grid
30V DC
PV Array
Improving efficiency is the number one objective in the field of photovoltaics:
Line Frequency
Bypass
+
D1
S2..5
S1
Ways of converting solar energy into electricity more efficiently are required in order to optimize the
technologys cost-effectiveness. Efficiency gains of as little as one percent can still yield enormous
returns in this segment.
Infineon provides a comprehensive portfolio of high-performance products including CoolMOS,
IGBTs, Silicon Carbide, IGBT modules and driver ICs to help customers achieve their aims. These highperformance products boost the reliability and efficiency of inverters for photovoltaic applications.
As the leader in high-efficiency technologies, we enable customers in realizing photovoltaic inverter
efficiencies of up to 99%.
EMI Filter
PWM
control
Devices
S1
D1
S2S5
Function
Primary side switch
Rectifying diode
Unfolding bridge
Recommended IFX parts

OptiMOS 150V
SiC Schottky barrier Diode 1200V
CoolMOS 800V
Example:
Single phase solution, isolated
Boost
Isolation + Rectification
D1
S3
DC/AC stage
S8..9
S5
230V
AC
D2..5
150..450V
DC
S1
S2
Devices
S1
D1
S2..S5
D2..D5
S6..S7
S8..S9
S6..7
S4
Function
Boost switch
Boost diode
PWM switches
Rectification diodes
High frequency output switches
Polarity selection switches
Recommended IFX parts

CoolMOS 650V C6
SiC SBD 600V Gen 3
CoolMOS 650V CFD2
SiC SBD 600V Gen 3
CoolMOS 650V CFD2
IGBT 600V T (trench & field stop)
* Source: EPIA Global Market Outlook for Photovoltaics Until 2015
18
Press Esc to escape
< Back to overview
19
Induction Heating
Our IGBTs for Welding - the power is in your hands
Highest Performance, Efficiency and Reliability IGBTs

for Induction Heating Cooktops
In the field of industrial welding, discretes are used for home and small inverterised welders. Infineons
high speed devices are used to reduce the size of the active components and transformer (25kHz -->
70kHz). Infineons IGBTs offer high speed/high performance to get the best out of your system.
Welding Inverter

Full bridge
2x Fast IGBT
2x High Speed IGBT
T3
D2
T1
iout
D1
VIN
D1
Lout
D3
D4
iout
Lout
VIN
T2
Being the market leader in IGBTs, we offer a comprehensive, high performance portfolio of 600V,
1100V, 1200V, 1350V, 1600V discrete IGBTs for resonant-switching applications like induction heating
cooktops. The portfolio has been developed to provide benchmark performance in terms of switching
and conduction losses, which ensures best-in-class efficiency and fast time to market.
Two transistor forward
4x Fast IGBT
4x High Speed IGBT
T1
Applications
Industrial Welding (MMA < 280A)
T2
T4
New Edition IHW40N60RF and 600V HighSpeed 3 family have been added to address high speed
switching topologies where switching losses have been optimized. These devices provide excellent
performance over temperature and ensure up to 20% lower switching losses compared to competitor
devices.
The 1350V 3rd Generation induction heating specific IGBT has recently been added to the portfolio. The
device has been designed to offer a higher voltage breakthrough headroom to offer customer higher
reliability whilst not compromising device performance.
D2
Induction Heating Inverter (Current Resonance)
Induction Heating Inverter (Voltage Resonance)
Half bridge
PFC
Single switch
Lres
RCIGBT
Industrial Welding
DC/AC
PFC AC/DC
Aux
IGBT Driver
20
Topology
Voltage Class
Technology
Selection
Full-Bridge
Full-Bridge
Two Transistor Forward
600V
1200V
600V
1200V
HighSpeed 3
HighSpeed 3
HighSpeed 3
HighSpeed 3
Recommendation
Recommendation
Recommendation
Recommendation
Boost Converter / switch

Boost Converter / switch
600V
1200V
HighSpeed 3
HighSpeed 3
Reference
Reference
Boost Converter
650V
CoolSET F3
Recommendation
EiceDRIVER (1ED)
EiceDRIVER (ED)
Efficiency
Recommendation
Half-Bridge Single Channel

Half-Bridge Dual Channel
600V/1200V
600V/1200V
Press Esc to escape
Cbus
Lf
Cres
CK1
HV-Driver
VAC
MCU
Lf
Cres
RC-IGBT
Lres
CK2
Cres
VAC
Cbus
Induction Heating
Topology
Voltage Class
DC/AC
Series-Resonant Half-Bridge 20kHz

Series-Resonant Half-Bridge 60kHz
Quasi-Resonant Single Ended
600V
600V
1100V
1200V
1350V
1600V
RC-H
RC-HF
RC-H
RC-H
RC-H
RC-H
Recommendation
Recommendation
Recommendation
Reference
Reference
Recommendation
Flyback
Flyback
Boost Converter
650V
800V
800V
CoolSET QR
CoolSET QR
CoolSET F3
Efficiency
Recommendation
Reference
Aux
< Back to overview
Technology
Selection
21
Aircon
Applications
Infineons Innovative Approach for Aircon Reference Board

We offer a wide portfolio of energy saving chips for the whole system chain of power electronic devices
for air-conditioning systems. To enable engineers a fast entry in the usage of our devices an aircon
reference board has been developed.
Features
1 kW compressor inverter stage using 15 A RC-Drives IGBT in DPAK (TO-252)
200 W outdoor fan inverter stage using 4 A RC-Drives IGBT in DPAK (TO-252)
1.5 kW CCM-PFC using 20 A HighSpeed 3 IGBT
10 A SiC-Diode
RC
RST
BSL
Motor 0
CAN
5 kV Isolation
OCDS
JTAG
HEATSINK
SSC
&
ASC
HALL
XC878
RC
RC
RC
RC
SiC
Diode
Rectifier
RC
Driver
CAN
OP AMP
motor 0
Gain 23
6ED003
L06-F
ICE3PCS02G
10m
20m
15V
DC/CD
CoolSet
F3
BSL
ASC
CAN
5 kV Isolation
OCDS
JTAG
HALL
2
HS3
IGBT
shunt
motor O
5V
LDO
OP AMP
motor 1
Gain 16
shunt
PFC
C
h
o
k
e
Relais
OP AMP PFC
Gain 16
oset 2.5V
20m
XE164
RC
RC
RC
RC
RC
RC
270F
400V
shunt
motor 1
Our High Performance Solution

Inverterised Air-conditioning Reference Board
EMC Filter
ENCODER
RST
HALL
0
6ED003
L06-F
270uF
400V
SSC
CAN
Motor1
Aircon
PFC AC / DC
DC / AC
Aux
IGBT Driver
Topology
Voltage Class
230V
AC
DC
Technology
Infineon is renowned for oering best in class discrete devices and ICs now with
the inverterised air conditioning reference board, Infineon can present system
expertise in the fast growing inverterised air conditioning market.
Key features and benefits of Infineons Air-conditioning reference board
Size and thermally optimised reference platform for inverterised air-conditioner
Selection
PFC CCM (low frequency)

PFC CCM (high frequency)
PFC CCM
PFC CCM
600V
600V
600V
600V
TRENCHSTOP
HighSpeed 3
CoolMOS C6
SiC Diode
Recommendation
Recommendation
Reference
Recommendation
B6-VSI
B6-VSI
600V
600V
RC Drives
TRENCHSTOP
Recommendation
Efficiency
Boost Converter
650V
CoolSET F3
Reference
Driver for B6 Bridge
600V
EiceDRIVER (6ED)
Recommendation
Innovative cooling for high power SMD IGBTs

Full power electronic SMD assembly for high capacity production
For further information please visit our website:

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www.infineon.com/aircon
[ www.infi
neon.com/aircon ]
23
OptiMOS
Available in innovative space saving packages like CanPAK, SuperSO8 or S3O8, these products
reduce the volume consumption up to more than 90%. In addition, they improve switching noise and
EMI for SMPS, as well as other industrial applications.
Applications
With the new OptiMOS products, we have the best solution to

Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase Efficiency for all load conditions
Save space with smallest packages like CanPAK or S308
Minimize EMI in the system making external snubber networks obsolete and the products easy to
design-in
Efficiency of OptiMOS 25V in a six-phase server VRD
Eciency [%]
OptiMOS products are suitable for a wide range of applications:

VR-modules for server
Synchronous rectification for AC/DC SMPS
DC/DC converters
Motor control 12V-110V system
Solar micro inverter and Maximum Power Point Tracker (MPPT)
LED lighting
Notebook and desktop
Low Voltage
The solution can be found in the low voltage Power MOSFET family, OptiMOS 20V up to 250V, which
consistently sets the benchmark in key specifications for power system design, including leading onstate resistance and Figure of Merit characteristics which lead to reduced power losses and improved
overall efficiency.
Lower power losses enable system cost improvement by reducing the need for device paralleling and
allowing smaller heatsinks. OptiMOS family also contributes to customers goals of providing more
compact power supply designs.
With the new OptiMOS 25V and 30V product family, Infineon sets new standards in power density
and Energy Efficiency for discrete power MOSFETs. Ultra low gate and output charge, together with
lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the
demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.
OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI
behavior, as well as increased battery life.
High Voltage
Infineons innovative products serve the market needs throughout the whole energy supply chain.
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro
inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). In all
these areas, our customers face the challenge of growing power demand, higher efficiency and lower
cost. At the same time, the available space is constantly shrinking, leading to higher power density
requirements.
Demonstrating > 93% efficiency in voltage regulation for power

applications
96
94
92
90
88
86
84
82
80
78
76
74
72
70
Outstanding performance of the

new OptiMOS 25V and 30V
products is exemplified on a
six-phase Server Vcore VRD. 93%
peak efficiency and >90% full load
efficiency is demonstrated with the
new OptiMOS 25V products in
SuperSO8 package.
(HighSide: BSC050NE2LS;
LowSide: BSC010NE2LS)
Vin = 12V, Vout = 1.2V

Lout = 210nH, Vdrive = 5V
fswitch = 350kHz
fswitch = 500kHz
0
20
40
60
80
100
120
140
160
180
Output Current [A]
Silicon Carbide
Leading-edge solutions for a better future
Next Best Competitor
17.5
Vin = 12V
Vdrive = 5V
Iout = 20A
15.0
12.5
80
40
25
Status 2010
30
40
60
75
80
Voltage [V]
100
120
150
200
250
10.5
7.5
5.0
2.5
0
-2.5
-5.0
100
200
300
400
500
600
700
800
900
1000
Packages
Time [ns]
With the new OptiMOS 25V/30V

products short switching times
(rise and fall times <5ns) go in
hand with excellent EMI behaviour.
An integrated damping network
guarantees low over- and
undershoot and minimizes ringing
without sacrifycing efficiency
Power ICs
120
IGBT
Clean waveforms for optimized EMI bahaviour make new OptiMOS 25V/30V products easy to use
Infineon
Voltage across SyncFet [V]
RDS(ON) in SuperSO8 [m]
160
24
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25
SuperSO8 / S3O8 the intelligent way to highest

efficiency and power density
In applications like synchronous rectification in SMPS, motor drives and DC/DC converters, high power
density and high efficiency are the major driving factors. Moving from TO-220 to SuperSO8 reduces the
volume consumption drastically. With three times lower parasitics compared to TO-220, SuperSO8 offers
highest efficiency and lowest design efforts due to reduced spikes.
OptiMOS technology enables for the first time very low RDS(ON) values needed for high current
applications in space saving packages such as SuperSO8, S3O8 and CanPAK, which were
previously only possible in bulky packages.
CanPAK best thermal behaviour in a tiny footprint
150
90
145
88
86
BSB028N06NN3 G
Competitor
84
82
50
100
150
200
250
300
350 400 450 500

Output Power [W]
140
135
130
Competitor
IPP110N20N
IPB065N15N3
120
550
120
10
15
20
25
30
PowerStage3x3 optimized for highest power density

35
output current [A]
Packages
Power ICs
IGBT
More than 1% higher peak efficiency can be reached by using Infineon products in synchronous
rectification of a 600W Server power supply with 12V output.
The new package PowerStage 3x3, is a leadless SMD package, which integrates the low-side and highside MOSFET of a synchronous DC/DC converter into a 3x3mm2 package outline with only 0.8 mm package
heigh. It is designed for an optimized thermal behaviour for DC/DC converters as well as for a compact
layout on the PCB. With its high current capability [max. continuous current 25 A (Tcase = 70C) max. pulse
current 40 A (Tcase = 25C)] the PowerStage 3x3 is the best solution to enhance performance levels in
smaller from factors than any other previous generations.
Silicon Carbide
overshoot [V]
Eciency [%]
155
92
High Voltage
CanPAK portfolio is the best fit for a broad number of industrial applications like voltage regulator for
servers, DC/DC converters, solar micro inverters and Maximum Power Point Trackers (MPPT), low voltage
drives and synchronous rectification. With only 31mm footprint, CanPAK M allows 65% space reduction in
power components on the board compared to traditional D2PAK. In addition, the metal Can enables doublesided cooling along with almost no package parasitic inductances, leading to higher systems efficiency.
Efficiency
94
Low Voltage
With OptiMOS 40V-250V products, we set the benchmark in industry. The leading on-state resistance
RDS(ON) and switching behaviour reduce power losses and enable overall efficiency levels exceeding
95%. With these products Infineon supports the market trend towards Energy Efficiency targets such as
Energy Star Diamond.
Applications
Always a step ahead with Infineon
26
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27
TO-252
DPAK
CanPAK M CanPAK S
TO-263
7 Pin
TO-220
TO-220
FullPAK
SuperSO8
S308
BSC019N02KS G
<2
TO-251 / TO-252
RDS(on) @VGS=10V TO-251 SL DPAK
[m]
CanPAK CanPAK
M
S
TO-263
D2PAK
TO-263
7 Pin
TO-220
BSC026N02KS G
BSB012N03LX3 G
IPB009N03L G
BSC011N03LS
RDS(ON)=2.6m
RDS(ON)=1.2m
RDS(ON)=0.95m
RDS(on)=1.1m
BSO330N02K G
1-2
RDS(ON)=32.0m
Bare Die
(RDS(on) typ.)
IPC218N03L3
RDS(ON)=1.4m
RDS(ON)=4.6m
30-40
S308
BSC014N03LS G
BSC046N02KS G
4-10
Super
SO8
(Power
Stage 3x3)
RDS(ON)= 1.9m
2-4
S3O8 dual
Applications
RDS(on) @VGS=10V TO-251 /

TO-251 SL
[m]
OptiMOS 30V Logic Level
BSB017N03LX3 G
BSC016N03LS G BSZ019N03LS
RDS(ON)=1.7m
RDS(ON)=1.6m
IPC055N03L3
RDS(on)=1.9m
Low Voltage
OptiMOS 20V
BSC0901NS
RDS(on)=1.9m
BSC0901NSI
RDS(on)=2.0m
CanPAK M CanPAK S
TO-263
7 Pin
TO-220
TO-220
FullPAK
SuperSO8
S308
BSC0902NSI
BSZ0902NSI
RDS(on)=2.8m
RDS(on)=2.8m
BSC025N03LS G BSZ0902NS
BSB008NE2LS *
BSC009NE2LS
RDS(ON)=2.5m
RDS(ON)= 0.8m
RDS(ON)=0.9m
BSC0902NS
BSB012NE2LX
BSC010NE2LS
BSZ18NE2LS
RDS(ON)=1.2m
RDS(ON)=1.0m
RDS(ON)=1.8m
IPS031N03L G
IPD031N03L G
IPB034N03L G
IPP034N03L G
BSB013NE2LXI
BSC010NE2LSI
BSZ018NE2LSI
RDS(ON)=3.1m
RDS(ON)=3.1m
RDS(ON)=3.4m
RDS(ON)=3.4m
RDS(ON)=1.3m
RDS(ON)=1.0m
1-2
2-4
RDS(on)=2.6m
RDS(on)=2.6m
BSC030N03LS G BSZ035N03LS G
RDS(ON)=3.0m
RDS(ON)=3.5m
BSC034N03LS G BSZ0904NSI
RDS(ON)=1.8m
BSC014NE2LSI
RDS(ON)=3.4m
RDS(ON)=1.4m
BSC0904NSI
RDS(on)=4.0m
RDS(on)=3.7m
BSC018NE2LSI
RDS(ON)=1.8m
IPS040N03L G
IPD040N03L G
BSF050N03LQ3 G IPB042N03L G
RDS(ON)=5.0m
IPP042N03L G
BSC042N03LS G BSZ050N03LS G IPC028N03L3
BSC018NE2LS
RDS(ON)=4.0m
RDS(ON)=4.0m
RDS(ON)=4.2m
RDS(ON)=4.2m
RDS(ON)=4.2m
RDS(ON)=5.0m
RDS(ON)=1.8m
IPS050N03L G
IPD050N03L G
IPB055N03L G
IPP055N03L G
BSC0906NS
BSZ058N03LS G
BSC024NE2LS
RDS(ON)=5.0m
RDS(ON)=5.0m
RDS(ON)=5.5m
RDS(ON)=5.5m
RDS(on)=4.5m
RDS(ON)=5.8m
RDS(ON)=2.4m
RDS(ON)=5.0m
RDS(ON)=3.2m
BSF030NE2LQ
RDS(ON)=3.0m
IPC022N03L3
BSC050N03LS G
4-6
BSC032NE2LS
2-4
IPC042N03L3
RDS(on)=2.1m
Silicon Carbide
<1.0
TO-252
DPAK
RDS(ON)=2.0m
BSC057N03LS G
IGBT

TO-251 SL
[m]
BSC020N03LS G BSZ0901NSI
RDS(ON)=2.4m
High Voltage
OptiMOS 25V
BSF024N03LT3 G
RDS(ON)=5.7m
BSZ036NE2LS
RDS(ON)=3.6m
BSC052N03LS
RDS(on)=5.2m
BSC050NE2LS
RDS(ON)=5m
4-6
IPD060N03L G
IPB065N03L G
IPP065N03L G
RDS(ON)=6.0m
RDS(ON)=6.0m
RDS(ON)=6.5m
RDS(ON)=6.5m
BSZ065N03LS
IPS075N03L G
IPD075N03L G
IPB080N03L G
IPP080N03L G
BSC0908NS
RDS(ON)=7.5m
RDS(ON)=7.5m
RDS(ON)=8.0m
RDS(ON)=8.0m
RDS(on)=8.0m
RDS(on)=6.5m
Power ICs
BSZ060NE2LS
RDS(ON)=6m
6-8
IPS060N03L G
All OptiMOS products are halogen free.
Packages
* in development
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29
TO-263
D2PAK
TO-263
7 Pin
TO-220
S3O8 dual
Super
SO8
S308
Bare Die
(RDS(on) typ.)
(Power
Stage 3x3)
IPS090N03L G
IPD090N03L G
IPB096N03L G
IPP096N03L G
BSC080N03LS G BSZ088N03LS G
RDS(ON)=9.0m
RDS(ON)=9.0m
RDS(ON)=9.6m
RDS(ON)=9.6m
RDS(ON)=8.0m

TO-251 SL
[m]
TO-252
DPAK
RDS(ON)=9.0m
BSZ035N03MS G
RDS(ON)=3.5m
BSC0909NS
IPS105N03L G
IPD105N03L G
IPB114N03L G
IPP114N03L G
BSC100N03LS G BSZ100N03LS G IPC014N03L3
RDS(ON)=10.5m
RDS(ON)=10.5m
RDS(ON)=11.4m
RDS(ON)=11.4m
RDS(ON)=10.0m
RDS(ON)=10.0m
BSZ0909NS
2-6
RDS(on)=12.0m
IPS135N03L G
IPD135N03L G
IPB147N03L G
IPP147N03L G
BSZ130N03LS G
RDS(ON)=13.5m
RDS(ON)=13.5m
RDS(ON)=14.7m
RDS(ON)=14.7m
RDS(ON)=13.0m
TO-220
FullPAK
SuperSO8
BSC020N03MS G BSO033N03MS G
RDS(ON)=2.0m
RDS(ON)=3.3m
BSZ050N03MS G
RDS(ON)=5.0m
RDS(ON)=4.2m
RDS(ON)=5.1m
BSZ058N03MS G
RDS(ON)=5.8m
BSC050N03MS G
RDS(ON)=5.0m
BSC057N03MS G
RDS(ON)=5.7m
RDS(on)=18.0m
BSZ0907ND *
7+9
BSO065N03MS G
RDS(ON)=6.5m
RDS(on)=9.5/7.2m
BSZ0908ND *
9 + 19
6-10
RDS(on)=19.0/9.0m
BSZ088N03MS G
RDS(ON)=8.8m
BSC072N03LD G
2 x 7.2
BSC150N03LD G
10-20
BSZ100N03MS G
RDS(ON)=10.0m
RDS(ON)=10.0m
RDS(ON)=11.0m
BSZ130N03MS G
RDS(ON)=13.0m
RDS(ON)=12.0m
RDS(ON)=13.0m
>20
BSO220N03MS G
RDS(ON)=22.0m
2 x 15
BSO150N03MD G
RDS(ON)=15.0m
2 x 22
BSO220N03MD G
RDS(ON)=22.0m
Power ICs
IGBT
RDS(ON)=15.0m
RDS(ON)=8.0m
RDS(ON)=8.3m
BSC090N03MS G
RDS(ON)=9.0m
RDS(ON)=7.2m
2 x 15
S08
BSC030N03MS G
RDS(ON)=3.0m
BSZ0920NS *
15-20
TO-220
RDS(ON)=2.5m
RDS(ON)=4.0m
RDS(on)=9.2m
10-15
TO-263
7 Pin
BSC016N03MS G
RDS(ON)=1.6m
RDS(ON)=8.8m
RDS(on)=9.0m
TO-263
D2PAK
BSC014N03MS G
RDS(ON)=1.4m
<2
BSC090N03LS G BSZ0905NS *
8-10
S308
Applications
CanPAK CanPAK
M
S
Low Voltage
TO-252
DPAK
High Voltage
TO-251 /
RDS(on) @VGS=10V TO-251 SL
[m]
OptiMOS 30V Enhanced Logic Level
Silicon Carbide
OptiMOS 30V Logic Level
Packages
* in development
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31
TO-263
7 Pin
TO-220
BSB014N04LX3 G IPB015N04N G
RDS(ON)=1.4m
RDS(ON)=1.4m
IPB011N04L G
RDS(ON)=1.1m
IPP015N04N G
RDS(ON)=1.5m
BSB015N04NX3 G IPB015N04L G
RDS(ON)=1.5m
RDS(ON)=1.5m
IPB011N04N G
RDS(ON)=1.1m
TO-220
FullPAK
Super
SO8
S308
IPB022N04L G
RDS(ON)=2.2m
(RDS(on) typ.)
BSC016N04LS G
RDS(ON)=1.6m
RDS(on) @VGS=10V
[m]
TO-252
DPAK
IPC218N04N3
IPC171N04N
BSC017N04NS G
RDS(ON)=1.7m
IPB020N04N G
RDS(ON)=2.0m
IPP023N04N G
RDS(ON)=2.3m
IPB023N04N G
RDS(ON)=2.3m
IPD036N04L G
RDS(ON)=3.6m
IPB039N04L G
RDS(ON)=3.9m
IPD038N04N G
RDS(ON)=3.8m
IPD038N04N G
RDS(ON)=3.8m
IPB052N04N G
RDS(ON)=5.2m
4-7
CanPAK CanPAK
M
S
TO-262
IPB093N04L G
RDS(ON)=9.3m
TO-263
7 Pin
TO-220
IPI024N06N3 G
IPB019N06L3 G
IPB016N06LS3 G IPP024N06N3 G
RDS(ON)=2.8m
RDS(ON)=2.4m
RDS(ON)=1.9m
RDS(ON)=1.6m
TO-220
FullPAK
Super
SO8
Bare Die
(RDS(on) typ.)
IPC218N06L3
RDS(ON)=2.4m
IPB021N06N3 G IPB017N06N3 G
BSC028N06LS3 G
RDS(ON)=2.1m
RDS(ON)=2.8m
RDS(ON)=1.7m
RDS(ON)=2.9m
RDS(ON)=2.3m
BSC019N04NS G
RDS(ON)=1.9m
IPD031N06L3 G
IPI032N06N3 G
IPB034N06L3 G
IPB034N06N3 G IPP032N06N3 G IPA032N06N3 G BSC031N06NS3 G
RDS(ON)=3.1m
RDS(ON)=3.2m
RDS(ON)=3.4m
RDS(ON)=3.4m
BSC027N04LS G
RDS(ON)=2.7m
IPD034N06N3 G
IPI037N06L3 G
IPB037N06N3 G
IPP037N06L3 G
RDS(ON)=3.4m
RDS(ON)=3.7m
RDS(ON)=3.7m
RDS(ON)=3.7m
IPD035N06L3 G
IPI040N06N3 G
IPB049N06L3 G
IPP040N06N3 G
RDS(ON)=3.5m
RDS(ON)=4.0m
RDS(ON)=4.9m
RDS(ON)=4.0m
IPD053N06N3 G
IPB054N06N3 G
IPP052N06L3 G
IPA057N06N3 G
RDS(ON)=5.3m
RDS(ON)=5.4m
RDS(ON)=5.2m
RDS(ON)=5.7m
BSC035N04LS G
RDS(ON)=3.5m
S308
IPC218N06N3
IPB029N06N3 G IPB023N06N3 G
BSC030N04NS G
RDS(ON)=3.0m
IPP039N04L G
RDS(ON)=3.9m
TO-263
D2PAK
BSB028N06NN3 G
<3
3-5
BSZ040N04LS G
RDS(ON)=4.0m
RDS(ON)=3.2m
RDS(ON)=3.2m
RDS(ON)=3.1m
IPD048N06L3 G
RDS(ON)=4.8m
IPD038N06N3 G
RDS(ON)=3.8m
IPP041N04N G
RDS(ON)=4.1m
BSC050N04LS G
RDS(ON)=5.0m
IPP048N04N G
RDS(ON)=4.8m
BSC054N04NS G
RDS(ON)=5.4m
IPP065N04N G
RDS(ON)=6.5m
BSC059N04LS G
RDS(ON)=5.9m
BSZ042N04NS G
RDS(ON)=4.2m
BSC093N04LS G
RDS(ON)=9.3m
5-7
IPP057N06N3 G
BSC067N06LS3 G BSZ067N06LS3 G
RDS(ON)=5.7m
7-10
IPB075N04L G
RDS(ON)=7.5m
7-8
8-10
IPD088N04L G
RDS(ON)=8.8m
10-11
IPD105N04L G
RDS(ON)=10.5m
BSZ105N04NS G
RDS(ON)=10.5m
IPD160N04L G
RDS(ON)=16m
BSZ165N04NS G
RDS(ON)=16.5m
13-17
Bare Die
BSC018N04LS G
RDS(ON)=1.8m
2-3
3-4
TO-263
D2PAK
Low Voltage
<2
CanPAK
M
High Voltage
TO-252
DPAK
BSZ097N04LS G
RDS(ON)=9.7m
IPD170N04N G
RDS(ON)=17m
11-30
RDS(ON)=6.7m
RDS(ON)=6.7m
IPD079N06L3 G
BSF077N06NT3 G
IPB081N06L3 G
IPP084N06L3 G
IPA093N06N3 G BSC076N06NS3 G BSZ076N06NS3 G
RDS(ON)=7.9m
RDS(ON)=7.7m
RDS(ON)=8.1m
RDS(ON)=8.4m
RDS(ON)=9.3m
IPD088N06N3 G
IPB090N06N3 G
IPP093N06N3 G
BSC100N06LS3 G BSZ100N06LS3 G
RDS(ON)=8.8m
RDS(ON)=9.0m
RDS(ON)=9.3m
RDS(ON)=10.0m
IPD220N06L3 G
IPB230N06L3 G
IPP230N06L3 G
BSC110N06NS3 G BSZ110N06NS3 G
RDS(ON)=22.0m
RDS(ON)=23.0m
RDS(ON)=23.0m
RDS(ON)=11.0m
IPD250N06N3 G
IPB260N06N3 G
IPP260N06N3 G
RDS(ON)=25.0m
RDS(ON)=26.0m
RDS(ON)=26.0m
RDS(ON)=7.6m
RDS(ON)=7.6m
Silicon Carbide
RDS(on) @VGS=10V
[m]
OptiMOS 60V Logic Level / Normal Level
Applications
RDS(ON)=10.0m
RDS(ON)=11.0m
IPD350N06L G
RDS(ON)=35.0m
30-50
IPD400N06N G
RDS(ON)=40.0m
IGBT
IPD640N06L G
RDS(ON = 64.0m
IPD800N06L G
50-80
RDS(ON)=80.0m
IPD800N06N G
Power ICs
RDS(ON) = 80.0m
Packages
32
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33
2-4
4-6
TO-252
DPAK
TO-262
TO-263
D2PAK
TO-263
7 Pin
TO-220
IPI023NE7N3 G
RDS(ON)=2.3m
IPB031NE7N3 G
RDS(ON)=3.1m
IPP023NE7N3 G
RDS(ON)=2.3m
IPI034NE7N3 G
RDS(ON)=3.4m
IPB020NE7N3 G
RDS(ON)=2m
IPP034NE7N3 G
RDS(ON)=3.4m
IPI052NE7N3 G
RDS(ON)=5.2m
IPB049NE7N3 G
RDS(ON)=4.9m
IPP052NE7N3 G
RDS(ON)=5.2m
TO-220
FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
TO-252
DPAK
CanPAK
M
TO-262
TO-263
D2PAK
IPC302NE7N3
BSC042NE7NS3 G
RDS(ON)=4.2m
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super
SO8
S308
Bare Die
(RDS(on) typ.)
IPB019N08N3 G
IPC302N08N3
RDS(ON)=1.9m
1-3
3-4
IPP062NE7N3 G
RDS(ON)=6.2m
6-12

TO-251 SL
[m]
4-6
IPI028N08N3 G
IPB025N08N3 G
IPP028N08N3 G
IPA028N08N3 G
RDS(ON)=2.8m
RDS(ON)=2.5m
RDS(ON)=2.8m
RDS(ON)=2.8m
IPI037N08N3 G
IPB035N08N3 G
IPB030N08N3 G
IPP037N08N3 G
IPA037N08N3 G
RDS(ON)=3.7m
RDS(ON)=3.5m
RDS(ON)=3.0m
RDS(ON)=3.7m
RDS(ON)=3.7m
IPD053N08N3 G
BSB044N08NN3 G IPI057N08N3 G
IPB054N08N3 G
IPP057N08N3 G
IPA057N08N3 G
BSC047N08NS3 G
RDS(ON)=5.3m
RDS(ON)=4.4m
RDS(ON)=5.4m
RDS(ON)=5.7m
RDS(ON)=5.7m
RDS(ON)=4.7m
RDS(ON)=5.7m
Low Voltage
RDS(on) @VGS=10V
[m]
OptiMOS 80V
Applications
OptiMOS 75V Normal Level
BSC057N08NS3 G
IPI070N08N3 G
IPB067N08N3 G
IPP070N08N3 G
RDS(ON)=7.0m
RDS(ON)=6.7m
RDS(ON)=7.0m
IPD096N08N3 G
IPI100N08N3 G
IPB097N08N3 G
IPP100N08N3 G
IPA100N08N3 G
RDS(ON)=9.6m
RDS(ON)=10m
RDS(ON)=9.7m
RDS(ON)=9.7m
RDS(ON)=10.0m
IPU135N08N3 G
IPD135N08N3 G
IPI139N08N3 G
IPB136N08N3 G
IPP139N08N3 G
RDS(ON)=13.5m
RDS(ON)=13.5m
RDS(ON)=13.9m
RDS(ON)=13.6m
RDS(ON)=13.9m
RDS(ON)=12.3m
6-7
7-11
11-20
RDS(ON)=12.3m
RDS(ON)=34.0m
RDS(ON)=34.0m
Power ICs
IGBT
Silicon Carbide
30-40
High Voltage
RDS(ON)=5.7m
Packages
34
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35
TO-220
FullPAK
Super
SO8
S308
IPI030N10N3 G IPB027N10N3 G IPB025N10N3 G IPP030N10N3 G IPA030N10N3 G

RDS(ON)=3.0m RDS(ON)=2.7m RDS(ON)=2.5m RDS(ON)=3.0m RDS(ON)=3.0m
<3
Bare Die
(RDS(on) typ.)
IPC302N10N3
IPC26N10NR
RDS(ON)=3.9m
4-6
BSB056N10NN3 G
IPI045N10N3 G IPB042N10N3 G
IPP045N10N3 G IPA045N10N3 G
RDS(ON)=5.6m
RDS(ON)=4.5m
RDS(ON)=4.5m
RDS(ON)=4.2m
IPI072N10N3 G
IPP072N10N3 G
BSC060N10NS3 G
RDS(ON)=6.8m
RDS(ON)=7.2m
RDS(ON)=7.2m
RDS(ON)=6.0m
IPP06CN10L G
BSC070N10NS3 G
RDS(ON)=6.2m
RDS(ON)=7.0m
IPS118N10N G IPD082N10N3 G
IPP086N10N3 G IPA086N10N3 G BSC109N10NS3 G
RDS(ON)=11.8m RDS(ON)=8.2m
RDS(ON)=8.6m
RDS(ON)=8.6m
RDS(ON)=8.3m
RDS(ON)=8.5m
RDS(ON)=10.9m
IPS12CN10L G
IPP08CN10L G
BSC082N10LS G
RDS(ON)=11.8m
RDS(ON)=8.0m
RDS(ON)=8.2m
IPP12CN10L G
BSC105N10LSF G
RDS(ON)=12.0m
RDS(ON)=10.5m
IPD122N10N3 G
BSF134N10NJ3 G IPI126N10N3 G IPB123N10N3 G
IPP126N10N3 G IPA126N10N3 G BSC160N10NS3 G BSZ160N10NS3 G
RDS(ON)=12.2m
RDS(ON)=13.4m RDS(ON)=12.6m RDS(ON)=12.3m
RDS(ON)=12.6m RDS(ON)=12.6m RDS(ON)=16.0m RDS(ON)=16.0m
12-18
IPP16CN10L G
BSC123N10LS G
RDS(ON)=15.7m
RDS(ON)=12.3m
BSC159N10LSF G
RDS(ON)=15.9m
40-80
<4
7-8
IPD068N10N3 G
IPD180N10N3 G
IPI180N10N3 G
RDS(ON)=18.0m
RDS(ON)=18.0m
IPD25CN10N G
IPB26CN10N G
BSC205N10LS G
RDS(ON)=25.0m
RDS(ON)=26.0m
RDS(ON)=20.5m
IPD33CN10N G
IPB34CN10N G
BSC265N10LSF G
RDS(ON)=33.0m
RDS(ON)=34.0m
RDS(ON)=26.5m
IPB50CN10N G
RDS(ON)=50.0m
IPD78CN10N G
BSC750N10ND G
RDS(ON)=78.0m
RDS(ON)=75.0m
10-13
TO-263
D2PAK
IPB038N12N3 G
RDS(ON)=3.8m
RDS(ON)=4.5m
IPP05CN10L G
6-8
20-40
TO-262
4-5
RDS(ON)=5.1m
18-20
TO-252
DPAK
IPB039N10N3 G
3-4
8-12

TO-251 SL
[m]
IPS110N12N3 G
RDS(ON)=11.0m
TO-263
7 Pin
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPB036N12N3 G
RDS(ON)=3.6m
IPC302N12N3
IPC26N12N
IPI041N12N3 G
RDS(ON)=4.1m
IPP041N12N3 G
RDS(ON)=4.1m
IPI048N12N3 G
RDS(ON=4.8m
IPP048N12N3 G
RDS(ON)=4.8m
IPI076N12N3 G
RDS(ON)=7.6m
IPP076N12N3 G
RDS(ON)=7.6m
IPD110N12N3 G
RDS(ON)=11.0m
BSC077N12NS3 G
RDS(ON)=7.7m
IPP114N12N3 G
RDS(ON)=11.4m
IPI147N12N3 G
RDS(ON)=14.7m
13-20
TO-220
Applications
TO-220
Low Voltage
TO-263
7 Pin
IPB144N12N3 G
RDS(ON)=14.4m
IPP147N12N3 G
RDS(ON)=14.7m
BSC190N12NS3 G
RDS(ON)=19.0m
RDS(ON)=24.0m
RDS(ON)=24.0m
20-25
High Voltage
TO-263
D2PAK
OptiMOS 150V
RDS(on) @VGS=10V
[m]
TO-252
DPAK
CanPAK M
TO-262
TO-263
D2PAK
7-12
TO-220
FullPAK
Super SO8
S308
Bare Die
(RDS(on) typ.)
IPC302N15N3
IPD200N15N3 G BSB165N15NZ3 G IPI200N15N3 G IPB200N15N3 G

RDS(ON)=20.0m RDS(ON)=16.5m RDS(ON)=20.0m RDS(ON)=20.0m
IPP200N15N3 G
RDS(ON)=20.0m
BSC190N15NS3 G
RDS(ON)=19.0m
BSB280N15NZ3 G
RDS(ON)=28.0m
BSC360N15NS3 G
RDS(ON)=36.0m
30-60
IPP530N15N3 G
RDS(ON)=53.0m
IPD530N15N3 G
BSZ900N15NS3 G
RDS(ON)=53.0m
RDS(ON)=90.0m
Power ICs
80-90
TO-220
IPB065N15N3 G
RDS(ON)=6.5m
4-7
16-30
TO-263
7 Pin
Silicon Carbide
RDS(on) @VGS=10V TO-251 / TO-252 CanPAK CanPAK TO-262

TO-251 SL DPAK
M
S
[m]
OptiMOS 120V
IGBT
Packages
36
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37
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super SO8
S308
Bare Die
Voltage
(RDS(on) typ.)
IPC302N20N3
IPI110N20N3 G
RDS(ON)=11.0m
10-20
30-50
IPD320N20N3 G
RDS(ON)=32.0m
IPI320N20N3 G
RDS(ON)=32.0m
IPB107N20N3 G
RDS(ON)=10.7m
IPP110N20N3 G
RDS(ON)=11.0m
IPB107N20NA **
RDS(ON)=10.7m
IPP110N20NA **
IPB320N20N3 G
RDS(ON)=32.0m
IPP320N20N3 G
RDS(ON)=32.0m
SOT-223
TSOP6
SOT-89
SC-59
SOT-23
SOT-323
(RDS(on) typ.)
- 250
4.0, -0.43A, LL
BSP92P
BSS192P
BSR92P
12.0, -0.26A, LL
12.0, -0.19A, LL
11.0, -0.14A, LL
BSP321P
RDS(ON)=11.0m
900.0m, -0.98A, NL
BSC320N20NS3 G
RDS(ON)=32.0m
- 100
BSP322P
800.0m, -1.0A, LL
80-100
BSP316P
BSR316P
1.8, -0.68A, LL
1.8, -0.36A, LL
100-200
BSC12DN20NS3 G BSZ12DN20NS3 G
BSP613P
BSS83P
130.0m, 2.9A, NL
2.0, -0.33A, LL
200-300
BSP170P
BSS84P
BSS84PW
300.0m, -1.9A, NL
8.0, -0.17A, LL
8.0, -0.15, LL
- 60
TO-263
D2PAK
TO-263
7 Pin
TO-220
TO-220
FullPAK
Super SO8
S308
(RDS(on) typ.)
IPC302N25N3
10-20
BSP315P
IPD600N25N3 G
RDS(ON)=60.0m
IPI200N25N3 G
RDS(ON)=20.0m
IPB200N25N3 G
RDS(ON)=20.0m
IPP200N25N3 G
RDS(ON)=20.0m
IPI600N25N3 G
RDS(ON)=60.0m
IPB600N25N3 G
RDS(ON)=60.0m
IPP600N25N3 G
RDS(ON)=60.0m
BSR303PE *
~30.0m, ~-6.6A, LL
~30.0m, ~-3.3A, LL
BSP304PE *
BSL305SPE *
BSR305PE *
~40.0m, ~-5.5A, LL
~50.0m, ~-5.3A, LL
~50.0m, ~-2.7A, LL
BSP306PE *
BSL307SP
BSS308PE
~60.0m, ~-4.5A, LL
43.0m, -5.5A, LL
80.0m, -2.1A, LL, ESD
BSL308PE
BSS314PE
80.0m, -2.1A, LL,

dual, ESD
140.0m, -1.5A,
LL, ESD
BSL314PE
BSS315P
BSD314SPE
140.0m, -1.5A, LL,

ESD, dual
150.0m, -1.5A, LL
140.0m, -1.5A,
LL, ESD
BSC600N25NS3 G
RDS(ON)=60.0m
100-200
400-500
BSZ42DN25NS3 G
RDS(ON)=425.0m
800.0m, -0.62A, LL
BSL303SPE *
- 30
BSR315P
800.0m, -1.17A, LL
IPC302N25N3A **
20-30
60-70
Bare Die
BSP171P
- 20
Silicon Carbide
TO-262
SISC6,24P06
300.0m, -1.9A, LL
P-Channel MOSFETs
OptiMOS 250V
TO-252
DPAK
Bare Die
BSP317P
RDS(ON)=90.0m
RDS(ON)=90.0m
RDS(on) @VGS=10V
[m]
SOT-363
Low Voltage
TO-262
High Voltage
TO-252
DPAK
BSL315P
150.0m, -1.5A,
LL, dual
BSS356PWE *
BSD356PE *
~560.0m, ~0.73A, LL ~560.0m, ~0.73A, LL
BSL207SP
BSS209PW
BSV236SP
SISC01,18P02S
41.0m, -6A, SLL
550.0m, -0.58A, SLL
175.0m, -1.5A, SLL
SISC1.36P02Q
BSL211SP
BSS223PW
BSD223P
67.0m, -4.7A, SLL
1.2, -0.39A, SLL
1.2, -0.39A,
SLL, dual
BSS215P
150.0m, -1.5A, SLL
Power ICs
BSL215P
150.0m, -1.5A,
SLL, dual
IGBT
RDS(on) @VGS=10V
[m]
Small Signal
Applications
OptiMOS 200V
38
Packages
* in developement
** part qualified for Automotive
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39
-30 / 30
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
Voltage
SOT-223
TSOP6
SOT-89
SC-59
SOT-23
SOT-323
SOT-363
(RDS(on) typ.)
BSL215C
BSD235C
BSL802SN
BSR802N
N: 140.0m, 1.5A, SLL
N: 0.35, 0.95A, SLL
22.0m, 7.5A, ULL
23.0m, 3.7A, ULL
P: 150.0m, -1.5A, SLL
P: 1.2, -0.53A, SLL
BSL202SN
BSR202N
BSL316C
22.0m, 7.5A, SLL
21.0m, 3.8A, SLL
N: 160.0m, 1.4A, LL
BSL806N
BSS806N
BSD816SN
P: 150.0m, -1.5A, LL
57.0m, 2.3A,
ULL,dual
57.0m, 2.3A, ULL
160.0m, 1.4A, ULL
BSL205N
BSS205N
BSD214SN
50.0m, 2.5A, SLL, dual
50.0m, 2.5A, SLL
BSL308C
BSD356C *
N:57.0m, A, LL
N:350.0m, 0.95A, LL
P:80.0m, A, LL,
P:~560.0m, ~0.73A, LL
20
BSL207N
N-Channel MOSFETs
70.0m, 2.1A, SLL, dual
30
140.0m, 1.5A, SLL

BSS816NW
160.0m, 1.4A, ULL
BSD840N
400.0m, 0.88A,
ULL, dual
BSL214N
BSS214N
BSS214NW
BSD235N
140.0m, 1.5A, SLL,

dual
140.0m, 1.5A, SLL
140.0m, 1.5A, SLL
350.0m, 0.95A,
SLL, dual
BSL302SN
BSR302N
BSS306N
25.0m, 7.1A, LL
23.0m, 3.7A, LL
57.0m, 2.3A, LL
BSL306N
BSS316N
BSD316SN
57.0m, 2.3A, LL, dual
160.0m, 1.4A, LL
160.0m, 1.4A, LL
BSS670S2L
55
60
Bare Die
Applications
TSOP6
Low Voltage
-20 / 20
SOT-223
High Voltage
Complementary
Voltage
Small Signal
650.0m, 0.54A, LL
BSP318S
BSL606N *
BSS606N
BSR606N *
BSS138N
BSS138W
SISC0,3N06D
90.0m, 2.6A, LL
60.0m, 4.5A, LL
60.0m, 2.3A, LL
60.0m, 2.3A, LL
3.5, 0.23A, LL
3.5, 0.28A, LL
SISC02,3N06E1,0
BSP320S
BSS7728N
120.0m, 2.9A, NL
5.0, 0.2A, LL
SISC2,62SN06L
BSP295
SN7002N
SN7002W
300.0m, 1.8A, LL
5.0, 0.2A, LL
5.0, 0.23A, LL
2N7002
2N7002DW
3.0, 0.3A, LL
3.0, 0.3A, LL, dual
Silicon Carbide
Small Signal
BSS159N
8.0, 0.13A, depl.
~160.0m, A, LL
Power ICs
IGBT
75
BSP716 *
Packages
* in developement
40
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41
SOT-23
SOT-323
Bare Die
(RDS(on) typ.)
BSP373
BSS169
300.0m, 1.7A, NL
12.0, 0.09A, depl.
BSP372
BSS119
310.0m, 1.7A, LL
6.0, 0.17A, LL
SISC0,50N10D
RDS(on) @ VGS=10V
- 20V
700.0m, 1.1A, LL
BSS123
6.0, 0.37A, LL
6.0, 0.17A, LL
VGSth 0.8V to 1.8V
BSP297
200
SISC2,9N20D
N-Channel MOSFETs
3.5,0.14 A, depl.
BSS87
BSS131
6.0, 0.26A, LL
14.0, 0.1A, LL
SISC0,97N24D
30
BSO204P (dual)
45
BSO207P (dual)
67
BSO211P (dual)
240
BSP129
6.0, 0.05A, depl.
- 30V
BSS139
SISC0,97N25E1,4
4,2
IPD042P03L3 G
5-7
SPD50P03L G **
IPD068P03L3 G
30.0, 0.03A, depl.
SISC0,64N25D
400
500
600
800
BSO080P03NS3 G
BSO080P03NS3E G
BSO080P03S
BSO301SP
BSC080P03LS G
BSC084P03NS3 G
BSC084P03NS3E G
BSO120P03S
BSP299
BSZ086P03NS3 G
BSZ086P03NS3E G
BSC130P03LS G
BSZ180P03NS3 G
18
BSP324
25.0, 0.17A, LL
BSB027P03LX3 G *
BSB028P03NS3 G *
BSB029P03NX3 G *
BSZ120P03NS3 G
13
3.0, 0.5A, NL
CanPAK
BSO053P03NS3E G * BSC060P03NS3E G
12
BSP298
S3O8
BSC030P03NS3 G
~8
250
20
BSO200P03S
BSO303SP
21
BSO303P (dual)
BSC200P03LS G
1,2
4.0, 0.4A, NL
BSP125
BSS225
BSS127
SISC1,40N60D
45.0, 0.12A, LL
45.0, 0.09A, LL
500.0, 0.023A, LL
SISC0,52N60E
BSP135
BSS126
6.00, 0.02A, depl.
700.0, 0.007A, depl.
23
SPP80P06P
- 60V
20.0, 0.19A, NL
130
SPP18P06P
- 100V
SPB18P06P G
BSO613SPV G
300
SPP08P06P
SPD08P06P G
210
SPP15P10PL G
SPD15P10PL G
240
SPP15P10P G
SPD15P10P G
850
SPD04P10PL G
SPD04P10P G
SPB08P06P G
Packages
* in developement
** 5-leg
SPD18P06P G
SPD09P06PL G
250
to be used from VGS
10V
4.5V
2.5V
1.8V
SPB80P06 G
SPD30P06P G
75
BSP300

NL = Normal Level
LL = Logic Level
SLL = Super Logic Level
ULL = Ultra Logic Level
42
BSO203SP
BSO203P (dual)
BSP89
6.0, 0.35A, LL
SuperSO8
BSO201SP
21
BSP149
6.0, 0.35A, 2.8V rated
SO8
1.8, 0.66A, LL
BSP88
TO-263
(D2PAK)
IPD042P03L3 G
IPD068P03L3 G
BSP296
TO-252
(DPAK)
[m]
VGSth 1.8V to 2.3V
BSP123
TO-220
Low Voltage
SC-59
High Voltage
SOT-89
Silicon Carbide
TSOP6
IGBT
100
SOT-223
Power ICs
Voltage
Applications
P-Channel MOSFETs
Small Signal
Press Esc to escape
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43
016
Package Type
BSC = SuperSO8
BSO = SO-8
BSZ = S3O8
IPB = D2PAK
IPC = Chip Product
IPD = DPAK
IPI = I2PAK
IPP = TO-220
IPS = IPAK Short Leads
RON [m]
Multiplied by 10, if last digit is
not defined, substitution by C,
e.g. 07C = 7m class.
For chip products chip area
in mm2 multiplied by 10
N = N-Channel
P = P-Channel
C = Complementary
03
BSC
Green Product
Fast Switching
S = Single Chip
D = Dual Chip
only valid for SO-8,
SuperSO8, S3O8
N = Normal Level
M = Logic Level 5V optimized
L = Logic Level
K = Super Logic Level
J = Super Logic Level 1.8V rated
Breakdown Voltage divided by 10
E = Extended, +5V, e.g. E2 = 25V
014
03
Package Type
BSB = CanPAK
(M Can)
BSC = SuperSO8
BSF = CanPAK
(S Can)
BSO = SO-8
BSZ = S3O8
IPA = FullPAK
IPB = D2PAK
IPC = Chip Product
IPD = DPAK
IPI = I2PAK
IPP = TO-220
IPS = IPAK
Short Leads
G
Green Product
Features
F = fast switching
R = integrated gate
resistor
E = ESD protection
C = clean switching
e.g. IPD04xP03LE G
Technology Generation
3 = OptiMOS3
Package Options
SO-8 / SuperSO8 / S3O8
S = Single Chip
SuperSO8, S3O8
D = Dual Chip
SuperSO8, S3O8
RDS(ON) [m]
Multiplied by 10, if last digit is
not defined, substitution by C,
e.g. 07C = 7m class.
For chip products chip area
in mm2 multiplied by 10
CanPAK
Q = SQ or MQ footprint
X = SX or MX footprint
T = ST or MT footprint
P = MP footprint
N = N-Channel
P = P-Channel
C = Complementary
DPAK
X = xtra drain lead
Level
N = Normal Level
M = Logic Level 5V opt.
L = Logic Level
K = Super Logic Level
J = Ultra Logic Level
(NL) 10.0
(LL) 4.5
(ELL) 4.5
(SLL) 2.5
(ULL) 1.8
Packages
Power ICs
Breakdown Voltage divided by 10

E = Extended, +5V, e.g. E2 = 25V
Applications
BSC
Low Voltage
New OptiMOSTM
High Voltage
OptiMOSTM
Silicon Carbide
Naming System
IGBT
Naming System
44
Press Esc to escape
< Back to overview
45
BSC
0901
Applications
OptiMOSTM 30V
I
Consecutively Number
without any correlation
to product specification
Low Voltage
Package Type
Integrated Diode
D = Dual
S = Single
High Voltage
Channels
N = N-Channel
P = P-Channel
Small Signal
J2
Join the Infineon MOSFET Revolution!
X indicates the Package

D = SOT-363
P = SOT-223
R = SC59
S = SOT-89, SOT-23, SOT-323
L = TSOP-6
Addional Features
E = ESD protected MOSFET
3 digits product identifier

meaning dependent on
product generation
Only present in following case

W = to distinguish SOT323 from SOT23
Only present in following case

S = Single (only for packages which
are also used for multichip products)
Polarity
N = N-channel
P = P-channel
C = Complementary
(N-Ch + P-Ch)
Silicon Carbide
And experience the new OptiMOS 25V/30V Family!

93 % Eciency in Voltage Regulation for Power Applications
Ultra low Gate- and Output Charge together with lowest on state resistance
in small footprint packages make OptiMOS 25 V the best choice for the demanding
requirements of voltage regulator solutions in Servers, Datacom and Telecom
applications.
With the new OptiMOS product familiy, Infineon oers you the best solution to:
save overall system costs by reducing the number of phases in
multiphase converters
reduce power losses and increase energy eciency for all load conditions
save space with smallest packages like CanPAK1) or S3O8
IGBT
J1
Power ICs
BSX
minimize EMI in the system making external snubber networks obsolete
46
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< Back to overview
[ www.infineon.com/optimos
www.infineon.com/optimos ]
Packages
For further information please visit our website.
47
CoolMOS
CoolMOSTM
Source
CoolMOS technology
Gate
On state: Reduction of resistance of epitaxial layer by high doped n-columns

Higher doping level in n-type drift region results in lower RDS(on)
Blocking state: Compensation of additional charge by adjacent p-columns
Half of active chip area is covered by p-columns
During blocking state the p-column compensates the charge of the adjacent
n-column resulting in high breakdown voltage at an area specific on-resistance
below the silicon limit
n+
nepi
C3 series:
third series of CoolMOS, market entry in 2001
the "working horse" of the portfolio, fast
switching, symmetrical rise/fall time @10 V Vgs,
Vth 3 V, gfs high, Rg very low
design-in into all CoolMOS segments
C6 / E6 series:
sixth series of CoolMOS, market entry 2009
is the successor of C3
CFD series:
fourth series of CoolMOS, market entry in 2004
fast body diode, Qrr 1/10th of C3 series, Vth 4 V,
gfs high, Rg low
specific for phase-shift ZVS and DC/AC power
applications
Source
n+
CP series:
fifth series of CoolMOS, market entry in 2005
ultra low RDS(on), ultra low gate charge, very fast
switching
Vth 3 V, gfs very high, internal Rg very low
p+
Standard MOSFET
Gate
S5 series:
first series of CoolMOS, market entry in 1998
slow switching, close to converter MOSFET,
Vth 4.5 V, gfs low, Rg high
design-in in high power SMPS only
Applications
Low Voltage
Benefits
Easy control of switching behavior
Outstanding reliability with proven CoolMOS
quality combined with high body diode
ruggedness
More efficient, more compact, lighter and cooler
Since the development of the innovative CoolMOS technology we help applications to meet
the standby power and Energy Efficiency regulations. CoolMOS is used for example in lighting
applications where Energy Efficiency is more than ever a pre-condition as well as in solar inverters of
market leaders.
High Voltage
Features
Offers a significant reduction of conduction and
switching losses
Enables high power density and efficiency for
superior power conversion systems
Best-in-class price/performance ratio
CoolMOS - a history
CFD2 series:
Seventh series of CoolMOS, Market entry 2011
First 650V Super Junction device, with fast
body diode
Is the successor of CFD, suitable for resonant
topologies
Silicon Carbide
The revolutionary CoolMOS power family sets new standards in the field of Energy Efficiency. As
technology leader in high voltage MOSFETs, CoolMOS offers a significant reduction of conduction
and switching losses and enables high power density and efficiency for superior power conversion
systems. Especially the latest, state-of-the-art generation of high voltage power MOSFETs made it
possible that AC/DC power supplies are more efficient, more compact, lighter and cooler than ever
before. This success was achieved by offering the lowest on-state resistance per package outline, the
fastest switching speed and the lowest gate driver requirements of high voltage MOSFETs commercially
available.
p+
nepi
Drain
n+
900V
C3
650V
C3
600V
CFD
600V
C3
PC Silverbox
Server
Telecom
650V
C7
600V
CP
500V
C3
Solar
UPS
2003
2004
2006
productive
650V
C6 / E6
500V
CP
2005
650V
CFD2
2007
2008
2009
2010
2011
2012
under
development
Packages
HID lighting
600V
C6 / E6
Power ICs
Adapter
IGBT
800V
C3
Main Applications
48
Press Esc to escape
< Back to overview
49
CFD2 is the first 650V MOSFET technology with integrated fast body diode on the market. The product
portfolio provides all benefits of fast switching superjunction MOSFETs offering better light load
effciency, reduced gate charge, easy implementation and outstanding reliability. The new CFD2
technology offers lower prices compared to its predecessor 600V CFD and is the best choice for
resonant switching applications.
DPAK
(TO-252)
TO-220FP
(TO-220)
TO-220
(TO-220)
IPAK
(TO-262)
TO-247
(TO-247)
Benefits
Low switching losses due to low Qrr at
repetitive commutation on body diode
Self limiting di/dt and dv/dt
Low Qoss
Reduced turn on and turn of delay times
Outstanding CoolMOS quality
Applications
Features
First 650V technology with integrated fast body
diode on the market
Limited voltage overshoot during hard
commutation
Significant Qg reduction compared to C3 based
CFD technology
Tighter RDS(on) max to RDS(on) typ window
Easy to design in
Lower price compared to 600V CFD technology
IPD65R1K4CFD
IPD65R950CFD
IPB65R660CFD
IPA65R660CFD
IPP65R660CFD
IPI65R660CFD
IPW65R660CFD
IPD65R420CFD
IPB65R420CFD
IPA65R420CFD
IPP65R420CFD
IPI65R420CFD
IPW65R420CFD
IPB65R310CFD
IPA65R310CFD
IPP65R310CFD
IPI65R310CFD
IPW65R310CFD
IPB65R190CFD
IPA65R190CFD
IPP65R190CFD
35
IPI65R190CFD
IPW65R190CFD
IPB65R150CFD
IPA65R150CFD
IPP65R150CFD
IPI65R150CFD
IPW65R150CFD
IPB65R110CFD
IPA65R110CFD
30
IPP65R110CFD
IPI65R110CFD
IPW65R110CFD
93
92
Ids_SPW47N60CFD
Ids_IPW65R080CFD
IPW65R080CFD
25
41
CFD vs. CFD2 efficiency comparison in a 12 V Server SMPS

used Topologie ZVS FB @ 100 kHz
90
Eciency [%]
Id [A]
15
10
5
89
88
87
86
0.25
91
IPW65R041CFD
20
-5
Silicon Carbide
IPD65R660CFD
IPA65R420CFD
SPA11N60CFD
85
0.3
0.35
0.4
0.45
0.5
84
IGBT
1K4*
950*
660
420
310
190
150*
110
80
DPAK
(TO-263)
Topologies
ZVS phase shifted full bridge
LLC topologies
AC / DC bridge
3-level inverter
Low Voltage
With the new 650V CoolMOS CFD2 Infineon launches its second generation of its market leading high
voltage CoolMOS MOSFETs with integrated fast body diode. The new CFD2 devices are the successor
of 600V CFD with improved Energy Efficiency. The softer commutation behavior and therefore better
EMI behavior gives this product a clear advantage in comparison with competitor parts.
Applications
Telecom
Server
Battery Charging
Solar
HID lamp ballast
LED lighting
High Voltage
650V CoolMOS CFD2
100
300
400
500
600
700
Pout [W]
Power ICs
time []
200
Packages
* in development
50
Press Esc to escape
< Back to overview
51
3000 9
1400 15
950 22
600 32
380 49
280 66
190 95
110 170
70 290
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [m] [nC]
SPD02N50C3
SPD03N50C3
SPD04N50C3
SPD08N50C3
SPB04N50C3
SPI08N50C3
SPP04N50C3
SPA04N50C3
SPP08N50C3
SPA08N50C3
SPI12N50C3
SPB12N50C3
SPP12N50C3
SPA12N50C3
SPW12N50C3
SPI16N50C3
SPB16N50C3
SPP16N50C3
SPA16N50C3
SPW16N50C3
SPI21N50C3
SPB21N50C3
SPP21N50C3
SPA21N50C3
SPW21N50C3
6000
3000
1400
950
750
600
380
280
190
160
100
70
3.9
9.5
13
19
24
21
45
63
87
104.9
150
252
TO-252
DPAK
21
45
63
87
255
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
SPI07N65C3
SPP07N65C3
SPA07N65C3
SPI11N65C3
SPP11N65C3
SPA11N65C3
SPI15N65C3
SPP15N65C3
SPA15N65C3
SPI20N65C3
SPP20N65C3
SPA20N65C3
TO-247
SPW45N65C3
TO-251
IPAK
ID RDS(on) Qg
[A] [m] [nC]
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
SPU01N60C3
SPS01N60C3
SPD01N60C3
SPU02N60C3
SPS02N60C3
SPD02N60C3
SPB02N60C3
SPP02N60C3
SPU03N60C3
SPS03N60C3
SPD03N60C3
SPB03N60C3
SPP03N60C3
SPU04N60C3
SPS04N60C3
SPD04N60C3
SPB04N60C3
SPP04N60C3
SPA04N60C3
SPP06N60C3
SPA06N60C3
SPD06N60C3
SPU07N60C3
CoolMOS C3 800V
SPD07N60C3
TO-247
SPI07N60C3
SPB07N60C3
SPP07N60C3
SPA07N60C3
SPI11N60C3
SPB11N60C3
SPP11N60C3
SPA11N60C3
SPW11N60C3
SPP15N60C3
SPA15N60C3
SPW15N60C3
SPI15N60C3
SPI20N60C3
SPB20N60C3
SPP20N60C3
SPW20N60C3
SPP24N60C3
SPW24N60C3
SPW35N60C3
SPW47N60C3
2700
TO-251
IPAK
TO-251
IPAK SL
short leads
4 1300 20
6
900 27
8
650 40
11 450 50
17 290 91
tbd
85
tbd
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
SPD02N80C3
SPP02N80C3
SPA02N80C3
SPD04N80C3
SPP04N80C3
SPA04N80C3
SPD06N80C3
SPP06N80C3
SPA06N80C3
SPP08N80C3
SPA08N80C3
SPP11N80C3
SPA11N80C3
SPW11N80C3
SPP17N80C3
SPA17N80C3
SPW17N80C3
SPI08N80C3
SPB17N80C3
High Voltage
SPW52N50C3
Silicon Carbide
0.8
1.8
3.2
4.5
6.2
7.3
11
15
20.7
24.3
34.6
47
600
380
280
190
70
TO-251
IPAK SL
short leads
SPW32N50C3
CoolMOS C3 600V
ID RDS(on) Qg
[A] [m] [nC]
7.3
11
15
20.7
47
TO-251
IPAK
Applications
TO-251
IPAK SL
short leads
SPW55N80C3
CoolMOS C3 900V
ID RDS(on) Qg
[A] [m] [nC]
5.1 1200
TO-251
IPAK
29
TO-252
DPAK
IPD90R1K2C3
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPI90R1K2C3
IPP90R1K2C3
IPA90R1K2C3
IPW90R1K2C3
IPI90R1K0C3
IPP90R1K0C3
IPA90R1K0C3
IPW90R1K0C3
IPI90R800C3
IPP90R800C3
IPA90R800C3
IPW90R800C3
IPI90R500C3
IPP90R500C3
IPA90R500C3
IPW90R500C3
IPI90R340C3
IPP90R340C3
IPA90R340C3
IPW90R340C3
IPW90R120C3
Packages
5.7 1000 34
6.9 800 42
11 500 68
15 340 93
36 120 260
TO-251
IPAK SL
short leads
IGBT
1.8
3.2
4.5
7.6
11.6
16
21
32
52
TO-251
IPAK
Power ICs
ID RDS(on) Qg
[A] [m] [nC]
CoolMOS C3 650V
Low Voltage
CoolMOS C3 500V
52
Press Esc to escape
< Back to overview
53
13
9
10
12
13
17
23
399
350
299
250
199
140
17
19
23
27
34
48
IPS50R520CP
TO-262
I2PAK
TO-263
D2PAK
IPD50R520CP
IPD50R399CP
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [m] [nC]
4
IPP50R520CP
IPA50R520CP
IPI50R399CP
IPP50R399CP
IPA50R399CP
IPW50R399CP
IPI50R350CP
IPP50R350CP
IPA50R350CP
IPW50R350CP
IPI50R299CP
IPB50R299CP
IPP50R299CP
IPA50R299CP
IPW50R299CP
IPI50R250CP
IPB50R250CP
IPP50R250CP
IPA50R250CP
IPW50R250CP
IPI50R199CP
IPB50R199CP
IPP50R199CP
IPA50R199CP
IPW50R199CP
IPI50R140CP
IPB50R140CP
IPP50R140CP
IPA50R140CP
IPW50R140CP
CoolMOS CP 600V
ID RDS(on) Qg
[A] [m] [nC]
ThinPAK
8x8
600
21
6.8
9
11
12
16
21
25
31
39
60
520
385
299
250
199
165
125
99
75
45
24
17 IPL60R385CP
22 IPL60R299CP
26
32 IPL60R199CP
39
53
60
86
150
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
TO-251
IPAK SL
short leads
3300 4.7
2000
1400
950
600
520
380
280
190
160
125
99
74
70
41
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPD60R3K3C6
6.7
9.4
13
20.5
23.4
32
43
58
75
96
119
131
170
290
IPD60R2K0C6
IPD60R1K4C6
IPD60R950C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
IPD60R600C6
IPB60R600C6
IPP60R600C6
IPA60R600C6
IPP60R520C6
IPA60R520C6
IPD60R520C6
IPD60R380C6
IPI60R380C6
IPB60R380C6
IPP60R380C6
IPA60R380C6
IPI60R280C6
IPB60R280C6
IPP60R280C6
IPA60R280C6
IPW60R280C6
IPI60R190C6
IPB60R190C6
IPP60R190C6
IPA60R190C6
IPW60R190C6
IPB60R160C6
IPP60R160C6
IPA60R160C6
IPW60R160C6
IPB60R125C6
IPP60R125C6
IPA60R125C6
IPW60R125C6
IPB60R099C6
IPP60R099C6
IPA60R099C6
IPW60R099C6
IPP60R074C6
IPW60R070C6
IPW60R041C6
IPD60R600CP
IPI60R600CP
IPB60R600CP
IPP60R600CP
IPA60R600CP
IPD60R520CP
IPI60R520CP
IPB60R520CP
IPP60R520CP
IPA60R520CP
IPD60R385CP
IPI60R385CP
IPB60R385CP
IPP60R385CP
IPA60R385CP
IPI60R299CP
IPB60R299CP
IPP60R299CP
IPA60R299CP
IPW60R299CP
IPI60R250CP
IPB60R250CP
IPP60R250CP
IPA60R250CP
IPW60R250CP
IPI60R199CP
IPB60R199CP
IPP60R199CP
IPA60R199CP
IPW60R199CP
IPI60R165CP
IPB60R165CP
IPP60R165CP
IPA60R165CP
IPW60R165CP
IPI60R125CP
IPB60R125CP
IPP60R125CP
IPA60R125CP
IPW60R125CP
5.7
750 17.2
IPD60R750E6
IPP60R750E6
IPA60R750E6
IPI60R099CP
IPB60R099CP
IPP60R099CP
IPW60R099CP
7.3
8.1
9.2
10.6
13.8
20.2
600 20.5
520 23.5
450 28
380 32
280 43
190 63
IPD60R600E6
IPP60R600E6
IPA60R600E6
IPP60R520E6
IPA60R520E6
IPP60R450E6
IPA60R450E6
IPP60R380E6
IPA60R380E6
IPP60R280E6
IPA60R280E6
IPW60R280E6
IPP60R190E6
IPA60R190E6
IPW60R190E6
CoolMOS E6 600V
IPW60R075CP
IPW60R045CP
ID RDS(on) Qg
[A] [m] [nC]
TO-251
IPAK
TO-251
IPAK SL
short leads
TO-252
DPAK
IPD60R450E6
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
Packages
Power ICs
6.1
TO-251
IPAK
6
8
4.4
7.3
8.1
10.6
13.8
20.2
23.8
30
38
57.7
53.5
77.5
TO-251
IPAK
Applications
TO-252
DPAK
Low Voltage
520
TO-251
IPAK SL
short leads
Silicon Carbide
7.1
TO-251
IPAK
IGBT
ID RDS(on) Qg
[A] [m] [nC]
CoolMOS C6 600V
High Voltage
CoolMOS CP 500V
54
Press Esc to escape
< Back to overview
55
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [m] [nC]
600
23
IPD65R600C6
IPI65R600C6
IPB65R600C6
IPP65R600C6
IPA65R600C6
6.6
700
35
10.6 380
13.8 280
20.7 190
tbd
99
47
70
tbd
37
39
45
87
tbd
255
tbd
IPD65R380C6
IPI65R380C6
IPB65R380C6
IPP65R380C6
IPA65R380C6
IPI65R280C6
IPB65R280C6
IPP65R280C6
IPA65R280C6
IPW65R280C6
IPI65R190C6
IPI65R190C6
IPP65R190C6
IPA65R190C6
IPW65R190C6
IPP65R099C6
IPA65R099C6
IPW65R099C6
11
13.4
20.7
21.7
34.1
46
440
330
220
185
115
80
48
63
95
110
163
248
IPW65R070C6
IPW65R037C6
7.3
600
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
SPP07N60CFD
SPA07N60CFD
SPW07N60CFD
SPI11N60CFD
SPP11N60CFD
SPA11N60CFD
SPW11N60CFD
SPI15N60CFD
SPP15N60CFD
SPA15N60CFD
SPW15N60CFD
SPI20N60CFD
SPP20N60CFD
SPA20N60CFD
SPW20N60CFD
SPP24N60CFD
SPW24N60CFD
SPW35N60CFD
SPW47N60CFD
TO-251
IPAK
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
ID RDS(on) Qg
[A] [m] [nC]
TO-251
IPAK
tbd 1400 tbd
IPL65R600E6*
IPD65R600E6
IPP65R600E6
IPA65R600E6
39 IPL65R380E6*
45 IPL65R280E6*
tbd IPL65R190E6*
IPD65R380E6
IPP65R380E6
IPA65R380E6
IPP65R280E6
IPA65R280E6
IPW65R280E6
IPP65R190E6*
IPA65R190E6*
IPW65R190E6*
tbd
6.0
8.7
11.4
17.5
tbd
31.2
43.3
68
950
660
420
310
190
150
110
80
41
tbd
20
32
41
68
tbd
118
162
300
TO-251
IPAK SL
short leads
TO-252
DPAK
TO-262
I2PAK
TO-263
D2PAK
TO-220
TO-220
FullPAK
TO-247
IPD65R1K4CFD*
IPD65R950CFD*
IPD65R660CFD
IPI65R660CFD
IPB65R660CFD
IPP65R660CFD
IPA65R660CFD
IPW65R660CFD
IPD65R420CFD
IPI65R420CFD
IPB65R420CFD
IPP65R420CFD
IPA65R420CFD
IPW65R420CFD
IPI65R310CFD
IPB65R310CFD
IPP65R310CFD
IPA65R310CFD
IPW65R310CFD
IPI65R190CFD
IPB65R190CFD
IPP65R190CFD
IPA65R190CFD
IPW65R190CFD
IPI65R150CFD*
IPB65R150CFD*
IPP65R150CFD*
IPA65R150CFD*
IPW65R150CFD*
IPI65R110CFD
IPB65R110CFD
IPP65R110CFD
IPA65R110CFD
IPW65R110CFD
IPW65R080CFD
IPW65R041CFD
Power ICs
IGBT
10.6 380
13.8 280
tbd 190
23
ThinPAK
8x8
TO-251
IPAK SL
short leads
CoolMOS CFD2 650V
CoolMOS E6 650V
ID RDS(on) Qg
[A] [m] [nC]
TO-251
IPAK
Applications
TO-251
IPAK SL
short leads
Low Voltage
7.3
TO-251
IPAK
High Voltage
ID RDS(on) Qg
[A] [m] [nC]
CoolMOS CFD 600V
Silicon Carbide
CoolMOS C6 650V
Packages
* in development
56
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57
Naming System
20
60
Company
S = Formerly Siemens
Specifications
C3 = CoolMOSTMC3
S5 = CoolMOSTMS5
Device
P = Power MOSFET
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)
N = SOT-223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
Technology
N = N-Channel Transistors
Low Voltage
High Voltage
Applications
Power MOSFETs (naming system till 2005)
Continuous Drain Current

(@ TC = 25C) [A]
650V CoolMOS CFD2

Introduction of new market leading 650V CoolMOS technology with integrated fast body diode
60
099
With the new 650V CoolMOS CFD2 Infineon launches its second generation
of its market leading high voltage MOSFETs with integrated fast body diode.
This new outstanding product is planned to be the successor of 600V CFD with
improved energy efficiency. The softer commutation behavior and therefore
better EMI behavior gives this product a clear advantage in comparison with
competitor parts.
Company
I = Infineon
Series Name
in this case CoolMOSTMCP for
PFC and PWM applications
Device
P = Power MOSFET
RDS(on) [m]
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
I = TO-262 (I2PAK)
L = ThinPAK 8x8
N = SO-T223
P = TO-220
U = TO-252 (IPAK)
W = TO-247
R = RDS(on)
IGBT
Key features and benefits of Infineons 650V CoolMOS CFD2
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
First 650V technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation
Significant Qg reduction compared to C3 based CFD technology
Tighter distribution of typical Rdson
Easy to design in
Lower price compared to C3 based CFD technology
Power ICs
Packages
Silicon Carbide
Power MOSFETs (naming system from 2005 onwards)
[ www.infineon.com/cfd2
www.infineon.com/cfd2]
58
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59
Silicon Carbide Schottky Diodes
Features
Benchmark switching behavior
No reverse recovery
No temperature influence on the switching behavior
Standard operating temperature -55 to 175C
SiC power devices enable increased efficiency, reduced solution size, higher switching frequency and
produce significant less electromagnetic interference (EMI) in a variety of target applications
Second Generation now available in TO-220 FullPAK

High efficiency and thermal performance combine in a full isolated solution. The new FullPAK solution
combines the high electrical performance standards of Infineon second generation SiC Schottky
diodes and the advantages of a full isolated package, without significant impact on thermal behavior
compared to standard TO-220 solutions. The patented diffusion soldering technique enables to
consistently reduce the chip-to-leadframe thermal resistance and positions Infineon FullPAK products
as best-in-class performance. Additionally, we offer the industrys broadest portfolio in this package
with current ratings up to 6A.
16,0
Applications
Power factor correction
Solar and UPS inverters
Motor drives
Output rectification
Applications
SiC Schottky diodes thinQ!
IFX TO-220-FP
IFX TO-220-2
Competitor FP
14,0
12,0
10,0
High Voltage
RthJC (K/W)
Low Voltage
Silicon Carbide (SiC) is a revolutionary material for power semiconductors;

its physical properties outperform Silicon devices by far. Infineon offers SiC Schottky diodes
in 600V and 1200V.
8,0
6,0
4,0
2,0
0,0
Features
Lowest switching losses due to lowest Qc (Qrr) for any current rating in the market
Fully surge-current stable, high reliability and ruggedness
Best price/performance ratio in SiC
4
5
Current rating (A)
The graph shows the same junction-case thermal resistance for Infineon products at 2A and 3A, and
slightly higher values for the other current ratings. This small difference is in general compensated on
the final design assembly due to the need of an isolation foil for the standard TO-220 package. A clear
advance on competition (only products up to 3A available) is possible thanks to Infineon patented
diffusion soldering.
IGBT
The latest generation of Infineon SiC Schottky diodes features the industrys lowest device capacitance
for any given current rating, which further enhances overall system efficiency, especially at higher
switching frequencies and under low load conditions. Additionally, Infineon provides the industrys
broadest SiC Schottky diode portfolio which not only includes the TO-220 package (real 2pin version)
but also the DPAK package for high power density surface mount designs.
Silicon Carbide
The latest SiC generation: ThinQ! 3G
Packages
Power ICs
Benefits
System efficiency improvements at light & medium load
Enabling higher frequency designs and increased power density solutions
Lower system costs due to reduced cooling requirements
Broadest range of current ratings and lower costs/Amp. for cost-effective performance improvements
60
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61
2
3
4
5
6
8
10
12
16
3.2
5
8
12
15
19
24
30
38
11.5
16
32 IDD04S60C
42
49
59
84
98
118
TO-252
DPAK
TO-263
D2PAK
TO-220
Real 2Pin
TO-220
FullPAK
IDV02S60C
IDV03S60C
IDB06S60C
IDH04S60C
IDV04S60C
IDH05S60C
IDV05S60C
IDH06S60C
IDV06S60C
IDH08S60C
IDB10S60C
IDH10S60C
IDH12S60C
IF
[A]
Qc IF SM
[nC] [A]
3
4
5
6
8
9
10
12
3.2
4.5
6
8
12
15
16
19
11.5
18
26
32
42
49
51
59
TO-252
DPAK
TO-263
D2PAK
TO-220
Real 2Pin
IDD03SG60C
IDH03SG60C
IDD04SG60C
IDH04SG60C
IDD05SG60C
IDH05SG60C
IDD06SG60C
IDH06SG60C
IDD08SG60C
IDH08SG60C
IDD09SG60C
IDH09SG60C
IDD10SG60C
IDH10SG60C
IDD12SG60C
IDH12SG60C
Applications
Qc IF SM
[nC] [A]
TO-220
FullPAK
IDH16S60C
High Voltage
IF
[A]
600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM 3G

Low Voltage
600V Silicon Carbide High Voltage Schottky Diodes thinQ!TM 2G

1200V Silicon Carbide High Voltage Schottky Diodes thinQ!
7
18
27
36
54
14
29
39
58
78
TO-252
DPAK
TO-263
D2PAK
TO-220
Real 2Pin
TO-220
FullPAK
TO-247-HC
IDH02SG120
IDH05S120
IDH08S120
IDH10S120
IDY10S120
IDH15S120
IDY15S120
Packages
Power ICs
IGBT
2
5
8
10
15
Qc IF SM
[nC] [A]
Silicon Carbide
IF
[A]
62
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63
Naming System
Naming System
Company
I = Infineon
Specifications
C = Surge current stable
Device
D = Diode
Breakdown Voltage
Divided by 10
(60 x 10 = 600V)
Package Type
D = DPAK (TO-252)
H = TO-220 (real 2 pin)
B = TO-263
V = TO-220 FullPAK
Technology
S = SiC Diode

(@ TC = 25C) [A]
We are the Leader in

Energy Efficiency Technologies
thinQ!TM 3G
I
03
Low Voltage
60
60
Company
I = Infineon
Specifications
C = Surge current stable
Device
D = Diode
Breakdown Voltage
Divided by 10
(60 x 10 = 600V)
Package Type
D = DPAK
H = TO-220 real 2pin
Being the Leader in Energy Efficiency Technologies, Infineons products are enormously
important for future energy supplies in terms of both exploiting renewables and using
energy efficiently. Explore our wide offer of high-end products for your application:
G = low thermal resistance

Technology
S = SiC Diode

(@ TC = 25C) [A]
Infineons IGBT High Speed 3 breaking the Switching-Speed-Limits in various Topologies

Very soft switching waveforms for excellent EMI behavior
Lowest switching losses for switching frequencies above 20 kHz giving high efficiency
Extremely significant low(er) V
giving low conduction losses
ce(sat)
thinQ!TM 1200 V
I
02
Infineons SiC Schottky Diodes thinQ! making Improved Efficiency now are affordable
120
Company
I = Infineon
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Device
D = Diode
G = Low thermal resistance
System efficency improvements

Lower system costs due to reduced cooling requirements
Enabling higher frequency designs and increased power density solutions
Infineons 650V CoolMOS C6 / E6 more efficient, more compact, lighter & cooler
Very low area specific on-state resistance (R * A)
on
High body diode ruggedness
Lower switching losses due to lower energy storage in output capacitance (E )
oss
Technology
S = SiC Diode
Package Type
H = TO-220 real 2pin
Y = TO 247HC
High Voltage

(@ TC = 25C) [A]
Infineons OptiMOS 25V-250VPower Density Next Level of Energy Efficiency

Industrys lowest R
and figure of merit characteristics in all voltage classes
DS(on)
Allow cost improvement of your system by reducing the need for device paralleling and
enabling smaller heatsinks
www.infineon.com/powermanagement
[ www.infi
neon.com/powermanagement ]
64
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Silicon Carbide
12
IGBT
Power ICs
65
Packages
Applications
thinQ!TM 2G
IGBT
Benefits
IGBT offer much higher current density than MOSFET power switches due to bipolar action
Insulated gate allows bipolar performance with MOSFET gate drive performance
High efficiency = smaller heat sink which leads to lower overall system cost
Soft switching/resonant and hard topologies are comprehensively supported

Infineon has a huge portfolio addressing the following two switching techniques:
Soft switching/resonant
The world famous IHW series IGBTs
Switching frequency is the main selection criteria of IGBT
For IGBT usage, applications are divided into two switching techniques
Low
Frequency
Applications
Medium
Frequency
Applications
High
Frequency
Applications
(eg. drives,
induction
cooking)
(eg. UPS)
(eg. SMPS,
lamp ballast)
Inverterised Microwave Oven
Inverterised major home appliances:

Washing machines, dishwashers, fridges, air conditioning
Induction heating cook top
General purpose inverters
Induction heating rice cooker
Solar inverters
Office printers with induction heating used for ink

and band-feed
Partial PFC stages
High Voltage
Applications using
hard switching technique
Break IGBT
Silicon Carbide
high
Applications using
soft switching/resonant technique
MOSFETS
IGBTs
Low Voltage
IGBT versus MOSFET
Hard switching
600V RC-D IGBTs
600V RC-Drives Fast
600V TRENCHSTOP DuoPack IGBTs
600V HighSpeed 3
DC Current
(max)
Applications
We are famous for IGBT technology leadership and offer a comprehensive portfolio for the general
purpose inverter, solar inverter, UPS, Induction heating, Microwave Oven, Rice cooker, Automotive,
Welding and SMPS segments.
UPS / Welding
Bipolar Transistor
Discrete IGBT
low
< 12 kHz
medium
< 40 kHz
high
< 150 kHz
ultra high
( > 150 kHz)
Number 1 worldwide supplier

1 in every 4 Discrete IGBTs sold comes from Infineon
Benefits
Operating range up to 100kHZ
High efficiency devices optimised for
lowest switching and conduction losses
Cooler devices = smaller heat sinks
Excellent EMI behaviour meaning smaller
EMI filters
Comprehensive portfolio
Design support available on request
Packages
Features
Low Vce(sat) due to thin wafer technology
Low switching losses
High efficiency (cooler packages)
Huge portfolio (current, voltage and package types)
Excellent EMI behaviour
Technical support for customers
Solid logistic support
Highest quality standards
Leaders in IGBT Innovation
IGBT
Frequency
Power ICs
low
66
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67
Discrete IGBT Selection Tree

NO
Single
IGBT
IGBT
IGBT +
Anti-Parallel
Diode
Soft
Applications
YES
Hard
Diode
Commutation
2 20 kHz
20 100 kHz
2 20 kHz
8 60 kHz
2 20 kHz
20 100 kHz
TRENCHSTOP
HighSpeed
TRENCHSTOP (Duopack)
RC series (monolythic)
TRENCHSTOP
HighSpeed
RC-Drives
(monolythic)
Low Voltage
Frequency Range
DuoPack
(discrete)
600V
1000V
1200V
600V
1200V
600V
1200V
600V 1100V 1200V 1350V 1600V
600V
600V
1200V
600V
High Voltage
Voltage Range
1200V
Part Number
IGpccN60H3
IGpccN120H2
IGpccN120H3
IHpccN60T
IHpccT60
IHpccT120
IHpccNvvvR2
IHpccNvvvR3 IHpccN600RA
IHpccT120 IHpccN600RF
IKpccN60R
IKpccN60RF
IKpccN60T
IKpccT120
IKpccN120T2
IKpccN60H3
IKpccN120H2
IKpccN120H3
Silicon Carbide
IGpccN60T IGpccN100T
IGpccT120 IGpccN120
Half Bridge Resonant

(Current resonance
600V parts)
Half Bridge Resonant

(Current resonance
600V parts)
Single Switch
(Voltage resonance
> 600V parts)
Single Switch
(Voltage resonance
> 600V parts)
Welding Inverter
Full bridge inverter
Power ICs
CCM-PFC
Welding
AirCon
Washing machine
Induction Heating
Microwave
Multifunction Printers
Packages
Hard switching
topologies
without
anti-parallel diode
Welding Inverter
Full Bridge
Two Transitor Forward
Induction Heating
Microwave
Multifunction Printers
Solar Inverter
Asymmetrical Bridge
Symmetrical full bridge
Three level type I or
Three level type II converter
Motor Control
Three phase inverter
Full bridge inverter
UPS Bridge
Uninterruptable Power Supply
Three level type II converter
Major Home Appliances
Symmetrical full bridge
IGBT
Application
68
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69
IGBT for Air Conditioning
600V Product Family
High efficiency - the CCM PFC stage uses the latest generation HighSpeed 3 IGBT and SiC diode to
DuoPack
achieve a PFC efficiency of > 97 %. SMD mounting and high current density high speed IGBT allow for
improved PCB area optimisation.
For further information visit www.infineon.com/aircon
RC-Drives Fast IGBTs
Preview
Rapid Diode - Emitter controlled silicon diode family expansion targeting applications with switching
speeds up to 50 kHz. Target application is >100W PFC.*

Automotive Discrete IGBT portfolio qualified to AEC-Q101. Target application is EV-aircon, PTC heater,
and inverter drive; for diesel/gasoline vehicles HID lighting and Piezo-injection.*
TO-220
TO-262
TO-220
FullPAK
TO-247
IGP06N60T
IGP15N60T
IGB30N60T
IGP30N60T
IGW30N60T
IGB50N60T
IGP50N60T
IGW50N60T
Low Voltage
IGP10N60T
IGB15N60T
IGW75N60T
IKD03N60RF
IKU04N60R
IKD04N60RF
IKD04N60R
IKI04N60T
IKU06N60R
IKD06N60R
IKB06N60T
IKP06N60T
IKA06N60T
IKU10N60R
IKD10N60R
IKB10N60T
IKP10N60T
IKA10N60T
IKU15N60R
IKD15N60R
IKB15N60T
IKP15N60T
IKA15N60T
IKB20N60T
IKP20N60T
IKW20N60T
IKW30N60T
IKW50N60T
IKW75N60T
TRENCHSTOPTM IGBT and DuoPackTM

1200V Product Family
TO-251
IC (max.)
[A]
TO-252
DPAK
TO-263
D2PAK
TO-220
TO-262
TO-220
FullPAK
TO-247
Single IGBT
TRENCHSTOPTM
DuoPack
Drive high-frequency inverter for comfortable quietness . The RC-Drives IGBT technology was released
by Infineon at the end of 2009 as a cost-optimized solution to address the price-sensitive consumerdrives market. This basic technology provides outstanding performance for permanent magnet
synchronous and brushless DC motor drives. To meet the rising demand of the IGBTs for the low power
motor drives consumer market, a new version of the RC-Drives IGBT was developed: the IGBT and diode
losses are optimized to reduce the inverter losses at switching frequencies of 4~30kHz.This new family
of Infineons reverse conducting IGBT is called RC-Drives Fast. For consumer drives this series enables
high efficient designs of inverters that feature operations above 16kHz to reduce the audible noise
to an absolutely silent level. Furthermore highly precise vector control technologies can be used to
provide more torque in operation at low speed and high performance dynamics in the control at high
speed. The small footprint needed by the components enable high power density designs with less
system cost.
6
10
15
20
30
50
75
TO-263
D2PAK
High Voltage
IGBTs, 15 A duo-packs in a DPAK (TO-252) package are used for driving a 1 kW compressor.
Application tests show the case temperature staying below 110C with an ambient temperature of
65C. This provides more design freedom and a cost effective opportunity to replace IPMs in the
inverter stage of the compressor and fan.
6
10
15
20
30
30
40
50
75
3
4
TO-252
DPAK
8
15
25
40
60
8
15
25
40
TRENCHSTOPTM 2
IGW08T120
IGW15T120
IGW25T120
IGBT
Thermal behaviour - The inverter stages are driven with best in class current versus package size
Single IGBT
Features
Assembly - Full power electronic SMD assembly example for high capacity production.
TO-251
Silicon Carbide
IC (max.)
[A]
IGW40T120
IGW60T120
IKW08T120
IKW15T120
IKW15N120T2
IKW25T120
IKW25N120T2
IKW40T120
IKW40N120T2
Power ICs
Infineon is renowned for offering best in class discrete devices and ICs now with the inverterised
air conditioning reference board, Infineon can present system expertise in the fast growing
inverterised air conditioning market.
Applications
TRENCHSTOPTM IGBT and DuoPackTM
Packages
* in development
70
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71
HighSpeed 3 IGBT and DuoPackTM
Portfolio for 600V, 1100V, 1200V, 1350V & 1600V

TO-247 (IHW...) and TO-247HC (IHY...)
600V
1100V
15
20
1200V
IHW15T120
IHY15N120R3
IHW15N120R3
1350
1600V
IHW20N135R3
IHY20N135R3
20
30
30
40
40
40
IHW30N60T
IHW20N120R3
IHY20N120R3
IHW30N110R3 IHW30N120R2
IHW40T60
IHW40N60R
IHW40N60RF
TO-263
D2PAK
IGB01N120H2
IKB01N120H2
IKB03N120H2
TO-220
TO-262
TO-220
FullPAK
IGBT
DuoPack
IGW40N120H3
IKW15N120H3
IKW25N120H3
IKW40N120H3
TO-263
D2PAK
IGB20N60H3
IGB30N60H3
IKB20N60H3
IKB30N60H3
TO-252
DPAK
TO-263
D2PAK
TO-220 real 2
pin
IGP03N120H2
IGA03N120H2
IGW03N120H2
IKP01N120H2
IKP03N120H2
TO-220
IKA03N120H2
IKW03N120H2
TO-262
TO-220
FullPAK
TO-247
IGP20N60H3
IGP30N60H3
IKP20N60H3
IKP30N60H3
TO-220 real 2pin FullPAK
600V
IGP01N120H2
1200V
20
30
40
50
60
75
100
20
30
40
50
60
75
IGW25N120H3
IC (max.)
[A]
600V Product Family

IC (max.)
[A]
IGW15N120H3
TO-251
TO-247
HighSpeed 3 IGBT and DuoPackTM

TO-252
DPAK
15
25
40
15
25
40
TO-247
600V and 1200V
TO-251
TO-220
FullPAK
Discrete Emitter Controlled Diodes
IGB03N120H2
TO-262
IGW40N60H3
IGW50N60H3
IGW60N60H3
IGW75N60H3
IGW100N60H3
IKW20N60H3
IKW30N60H3
IKW40N60H3
IKW50N60H3
IKW60N60H3
IKW75N60H3
3
6
9
15
23
30
45
75
100
4
9
12
18
30
TO-247
650V
IDD03E60
IDD06E60
IDP06E60
IDD09E60
IDB09E60
IDD15E60
IDB15E60
IDP15E60
IDB23E60
IDP23E60
IDB30E60
IDP30E60
IDB45E60
IDP45E60
Silicon Carbide
IGD01N120H2
TO-220
IDV08E65D*
IDV20E65D*
IDV30E60C
IDW75E60
IDW100E60
IDP04E120
IDP09E120
IDB12E120
IDP12E120
IDB18E120
IDP18E120
IDB30E120
IDP30E120
IGBT
IGBT
DuoPack
TO-252
DPAK
TO-263
D2PAK
IHW40T120

TO-251
TO-252
DPAK
IHW30N160R2
IHY30N160R2
HighSpeed2 IGBT and DuoPackTM

IC (max.)
[A]
TO-251
Power ICs
IGBT & Diode
15
IC (max.)
[A]
Low Voltage
TO-262
High Voltage
TO-220
IGBT
TO-263
D2PAK
DuoPack
TO-252
DPAK
600V / 650V
TO-251
IC (max.)
[A]
Applications
TRENCHSTOPTM RC-H series
Packages
* in development
72
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73
Naming System
40
120
Applications
Discretes IGBT and Emitter Controlled Diodes

3
Low Voltage
Company
I = Infineon
S = Formerly Siemens
Device
K = IGBT + Diode (normal drives)
H = optimised for soft
switching applications
(e.g. induction heating)
G = Single IGBT
D = Diode
The new 1200V/600V IGBT HighSpeed 3 family, optimized in every respect
Nominal Current
(@ 100C) [A]
Technology
N = N-Channel
T = TRENCHSTOPTM
E = Emitter Controlled Diodes (for diode only)
The new 1200V/600V 3rd Generation HighSpeed IGBT family sets a new benchmark
for lowest switching losses and is recommended for use in topologies switching at
more than 20kHz. Up to 15 % eciency can be attained by implementing this family
in your design!
Nominal Voltage
Divided by 10 (120 x 10 = 1200V)
= Fast IGBT (~20kHz)
HS = HighSpeed (600V) (~80kHz)
H = HighSpeed (600V - 1200V up to 100kHz)
T = TRENCHSTOPTM (IGBT3)
R = Reverse Conducting
RF = Reverse Conducting Fast
A = Automotive
Generation
Power ICs
Key features and benefits of Infineons HighSpeed 3:

Lowest switching losses for switching frequencies above 20kHz giving highest
eciency in class
Soft switching waveforms for excellent EMI behavior
Very low Vce(sat) giving low conduction losses
Optimized diode for target applications meaning low diode losses and fast
recovery time
Positive Vce(sat) temperature coecient meaning thermal runaway not an issue
and paralleling is easy
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www.infineon.com/igbt
[ www.infi
neon.com/igbt ]
Packages
HighSpeed3 has won the EDN China Innovation Award in the category of
Power and Modules
74
IGBT
Breaking the switching-speed-limits in various topologies
Silicon Carbide
High Voltage
Package Type
A = TO-220 FullPAK
B = TO-263 (D2PAK)
D = TO-252 (DPAK)
P = TO-220
U = TO-251 (IPAK)
W = TO-247
I = I2PAK
Y = TO-280 (formerly TO-247 HC)
V = real 2 pin TO-220 FP
75
Power Factor Correction and Combo Controller

Continuous Conduction Mode PFC ICs
Applications
Discontinuous Conduction Mode PFC ICs
TDA486x
Low Voltage
zero crossing
detector
ICE2PCSxx
TDA4863 / TDA4863-2
Power Factor Controller (PFC) IC for high-power factor

and active harmonic filter
IC for sinusoidal line-current consumption
Power factor approaching 1
Controls boost converter as an active harmonics
filter
Internal start-up with low current consumption
Zero current detector for discontinuous operation
mode
High current totem pole gate driver
Trimmed 1.4% internal reference
Undervoltage lock out with hysteresis
Very low start-up current consumption
Pin compatible with world standard
Output overvoltage protection
Current sense input with internal low pass filter
Totem pole output with active shutdown during
UVLO
Junction temperature range -40 to +150C
Available in DIP-8 and SO-8 packages
Power Factor Controller IC for high-power

factor and low THD additional features to TDA4862
Reduced tolerance of signal levels
Improved light load behavior
Open loop protection
Current sense input with leading edge blanking LEB
Undervoltage protection
2nd Generation Continuous Conduction Mode (CCM) Power Factor

Correction IC Features
Fulfills Class D Requirements of IEC 61000-3-2
High Voltage
TDA4862
Lowest count of external components

Adjustable and fixed sw frequencies
Frequency range from 20kHz to 285kHZ
Versions with brown-out protection available
Wide input range supported
Enanched Dynamic Response during Load Jumps
Silicon Carbide
Cycle by Cycle Peak Current Limiting

Integrated protections OVP, OCP
DIP8 and DSO8
Leadfree, RoHS compliant
2nd Generation Continuous Conduction Mode (CCM) Power Factor Correction IC Product Portfolio
Power ICs
IGBT
Frequency(SW) Current Drives Package

50kHz - 285kHz
2.0A
65kHz
2.0A
100kHz
2.0A
DIP-8
133kHz
2.0A
20kHz - 250kHz
2.0A
50kHz - 250kHz
2.0A
65kHz
2.0A
100kHz
2.0A
DSO-8
133kHz
2.0A
20kHz - 250kHz
2.0A
Packages
Product
ICE2PCS01
ICE2PCS02
ICE2PCS03
ICE2PCS04
ICE2PCS05
ICE2PCS01G
ICE2PCS02G
ICE2PCS03G
ICE2PCS04G
ICE2PCS05G
76
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77
Combination of Continuous Conduction Mode PFC

with Two-Transistor Forward PWM IC
Applications
3rd Generation Continuous Conduction Mode (CCM)

Power Factor Correction IC Features
Integrated digital voltage loop compensation
Boost follower function
Bulk voltage monitoring signals, brown-out
Low Voltage
Multi protections such as Double OVP

Fast output dynamic response during load jump
External synchronization
Extra low peak current limitation threshold
SO8 and SO14
Leadfree, RoHS compliant
Fixed Frequency PWM IC and CoolSET Product Portfolio
Pre-short Protection
Trimmed Reference Voltage 2.5% (2% at 25C)
Frequency(SW) Current Drives

Features
Package
0.75A
OVP+Brown-out DSO-14
0.75A
OVP
Adjustable
DSO-8
0.75A
Brown-out
DSO-8
BiCMOS technology for wider VCC Range
Frequency(SW)
PFC=65kHz
PWM=130kHz
Current Drives Package

2.0A
DIP-16
2.0A
DSO-16
Packages
Power ICs
Product
ICE1CS02
ICE1CS02G
Pulse-Width-Modulation Block
Fixed Switching Frequency
Option for external control synchronization
Built in Soft Start for higher reliability
Max Duty Cycle 47% or 60%
Overall Tolerance of Current Limiting <5%
Internal Leading Edge Blanking
Slope Compensation
Fast, soft switching totem pole gate drive (2A)
SO16 and DIP16
Pb-free lead plating and RoHS compilant
All protection features available
Silicon Carbide
Power Factor Correction Block

Fixed switching frequency (sync to half PWM freq.)
AC brown-out protection
Average Current Control
Max Duty Cycle of 95%
Enhanced Dynamic Response for fast load response
Unique Soft-Start to Limit Start Up Current
Over-Voltage Protection
IGBT
Product
ICE3PCS01G
ICE3PCS02G
ICE3PCS03G
High Voltage
ICE1CS0x/G
78
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79
LLC Resonant (No SR)
LLC Resonant + SR
Applications
Resonant LLC Half-Bridge Controller IC

with Integrated Sychronised Rectifier control
Low Voltage
Resonant LLC Half-Bridge Controller IC
Novel and simple design (12 components + HB
Novel LLC/SR operation mode and controlled by
driver)
Minimum operating frequency is adjustable
externally
Burst mode operation for output voltage regulation
during no load and/or bus over-voltage
Multiple protections in case fault
Input voltage sense for brown-out protection
Open loop/over load fault detection by FB pin with
auto-restart and adjustable blanking/restart time
Frequency shift for over-current protection
Lead Free, RoHS compliant package
DSO-8 package
primary side controller

Multiple protections for SR operation
Silicon Carbide
Tight tolerance control

Accurate setting of switching frequency and dead
time
Simple system design
Optimized system efficiency
Multiple converter protections: OTP, OLP, OCP,
Latch-off Enable
External disable for either SR switching or HB
Frequency(SW)
Dead Time(ns) Current Drives Package
30kHZ~600kHz
380
1.5A
DSO-8
Product
ICE2HS01G
Frequency(SW)
30kHz~1MHz
IGBT
switching
Lead Free, RoHS compliant package
DSO-20 package
Dead Time(ns) Current Drives Package

125ns~2us
0.3A
DSO-20
Packages
Power ICs
Product
ICE1HS01G
High Voltage
ICE2HSO1G
ICE1HSO1G
80
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81
Climate Saver Gold
Climate Saver 80 PLUS Platinum
Applications
Climate Saver Standard and Bronze
certification for Infineon's Silverbox reference design

12 V
DC/DC
5V
DC/DC
5V
3V3
Low Voltage
12V
3V 3
PFC / PWM
5V
Standard and Bronze
PWM
CoolSETTM
ICE1CS02/G
5V
High Voltage
PFC Block
PWM Block
PFC
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
CoolSETTM
ICE3AR0680JZ
80 PLUS Platinum
certification for Infineon's Silverbox reference design
Gold
Climate Saver Silver

DC/DC
5V
PFC Block
PWM Block
DC/DC
ICE2PCS01G
ICE2PCS02/G
ICE3AR4780JZ
Standby Block
CoolSET
ICE3AR2280JZ
ICE3AR0680JZ
ICE3PCS02G
ICE3PCS03G
PWM Block
ICE3AR10080JZ
3V3
12V
ICE3PCS01G
PFC Block
ICE1HS01G
ICE2HS01G
Silicon Carbide
Standby Block
CoolSET
ICE2HS01G
ICE2QR4780Z
Standby Block
CoolSET
ICE2QR2280Z
ICE2QR0680Z
ICE2QR2280G
ICE3BR2280JZ
PFC
PWM
5V
Silver
PFC Block
PWM Block
IGBT
ICE3BR0680JZ
For further information visit www.infineon.com/silverbox

ICE2PCS01G
CoolSET
TM
ICE2PCS02/G
ICE1HS01G
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
Power ICs
Standby Block
CoolSET
ICE3AR0680JZ
ICE2QR4765
ICE2QR1765
Packages
ICE2QR0665
82
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83
Isolated AC/DC
Fixed Frequency PWM IC and CoolSET Features
Applications
Quasi-resonant PWM IC and CoolSET Features
zero crossing
detector
CoolSETTM
Integrated 650V CoolMOS or HV start-up cell for IC self-power supply
Active Burst Mode to achieve the lowest Standby
Over-temperature, over-voltage, short-winding,
Quasi-Resonant operation with Digital Frequency Reduction
Power Requirements < 50 mW

Optional Latched Off Mode (L) to increase
robustness and safety of the system
Adjustable Blanking window for high load jumps to
increase reliability
Startup Cell switched off after Start Up
65kHz/10kHz/130kHz internally fixed Switching
Frequency
overload and open-loop, VCC Under-voltage, (Brownout) protections

Fixed softstart time
Overall Tolerance of Current Limiting < 5%
Internal Leading Edge Blanking Time
Max duty cycle 72%
PB-free Plating and RoHS compliance
DIP, DSO and FullPAK packages
High average efficiency over wide load range

Stable operation without jittering/audible noise problem
Active burst mode operation for very low stby losses (to achieve standby power <100mW)
Auto restart mode for VCC under-voltage/over-voltage protection
Auto restart mode for open-loop and output overload protection
Auto restart mode for over-temperature protection
Latch-off mode for output over-voltage, short-winding
High Voltage
Low Voltage
CoolSETTM
BiCMOS Technology (controller) for wide Vcc operation and low IC power consumption
PB-free Plating and RoHS compliance
Quasi-resonant PWM IC and CoolSET Product Portfolio

VDS (breakdown)
R(DS)on
Power (Universal)
650V
650V
650V
800V
800V
800V
4.7
1.7
0.6
4.7
2.2
0.6
19W
33W
50W
22W
31W
57W
Package
DIP-8
DSO-8
DIP-8
DSO-8
DIP-8
DIP-8
DIP-8
DIP-7
DIP-7
DIP-7
Frequency(SW)
100kHz
65kHz
130kHz
65kHz
65kHz
65kHz
65kHz
65kHz
65kHz
65kHz
100kHz
100kHz
100kHz
100kHz
100kHz
100kHz
65kHz
65kHz
VDS (breakdown)
R(DS)on
Power (Universal)
650V
650V
650V
650V
650V
650V
650V
650V
650V
800V
800V
800V
800V
800V
800V
4.7
1.7
0.6
4.7
1.7
0.6
4.7
3.0
1.0
10.0
4.7
2.2
0.6
2.2
0.6
18W
31W
49W
18W
30W
47W
17W
16W
28W
10W
20W
28W
52W
28W
52W
Package
DSO-8
DSO-8
DSO-8
DIP-8
DIP-8
DIP-8
DIP-7
DIP-7
DIP-7
DSO-12
DIP-8
DIP-8
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
DIP-7
Packages
Product
ICE2QS01
ICE2QS02G
ICE2QS03
ICE2QS03G
ICE2QR4765
ICE2QR1765
ICE2QR0665
ICE2QR4780Z
ICE2QR2280Z
ICE2QR0680Z
Product
ICE3AS03LJG
ICE3BS03LJG
ICE3GS03LJG
ICE3BR4765J
ICE3BR1765J
ICE3BR0665J
ICE3BR4765JZ
ICE3BR1765JZ
ICE3BR0665JZ
ICE3BR4765JG
ICE3A1065ELJ
ICE3A2065ELJ
ICE3AR10080JZ
ICE3AR4780JZ
ICE3AR2280JZ
ICE3AR0680JZ
ICE3BR2280JZ
ICE3BR0680JZ
Silicon Carbide
DIP & DSO Package (for controllers and CoolSET)
Fixed Frequency PWM IC and CoolSET Product Portfolio
IGBT
Minimum switching frequency limitation (no audible noise on Power Units On/Off)
Power ICs
Peak power limitation with input voltage compensation
84
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85
MOSFET Gate Driver IC
6 x 6 IQFN High-Performance DrMOS (Driver+MOS)
PX3516
TDA21211 / TDA21220
Features
Dual MOSFET driver for synchronous
rectified bridge converters
Adjustable high-side and low-side MOSFET
gate drive voltages for optimal efficiency
Integrated bootstrap diode for
reduced part count
Adaptive gate drive control prevents
cross-conduction
Fast rise and fall times supports switching
rates of up to 2MHz
Features
Intel compliant DrMOS, Power MOSFET and Driver in
one package
For Synchronous Buck - step down voltage
applications
Wide input voltage range 5V ... 25V
High efficiency
Extremely fast switching technology for improved
performance at high switching frequencies
Remote Driver Disable function
SMODSwitching Modulation of low side MOS
PX3516
TDSON10
Y
1
0C to 125C
+4.5V to 6,5V
30
1.15, 2.10
410uA
VCC
TDA 21211
Input Voltage
SMOD function
Super Barrier Diode
Thermal warning/ shutdown
Max average load current
MOSFET Voltage
Schottky Diode
PWM levels
Shoot through protection
Low Voltage
TDA 21220
30V
16V
Low Side
Low Side
35A
50A
30V
25V
Included
Included
compatible +3.3V / +5V (tolerant) compatible +3.3V / +5V (tolerant)
Included
Included
UGATE
PHASE
ShootThrough
Protection
PVCC
LS
Driver
LGATE
Power ICs
PWM
Control
Logic
bootstrap circuit for reduced part count

Adaptive Gate Drive for shoot through protection
5V High and Low Side Driving voltage
Compatible to standard PWM controller ICs
with 3.3V and 5V logic
Three-State functionality
Small Package: IQFN-40 (6 x 6 x 0.8 mm3)
RoHS Compliant (Pb Free)
IGBT
HS
Driver
for added reliability in noisy applications

Includes active PMOS structure as integrated
For further information visit www.infineon.com/drmos
BOOT
UVLO
Extremely Robust Switch Node -20V 30V
High Voltage
current for low switching losses

Three-state PWM input for output
stage shutdown
VCC under-voltage protection
Lead-free (RoHS compliant)
SOIC and DFN packages
Silicon Carbide
Gate Driver
Package
RoHS-compliant
Number of channels
Maximum junction temperature
Supply voltage, Vcc
BOOT to GND
PWM Inputs
Quiescent current Iq
Capable of sinking more than 4A peak
Applications
Non-Isolated DC/DC
GND
Packages
PAD
86
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87
As microprocessors and ASICs have grown in power and complexity, their voltage regulation
requirements have become increasingly demanding. This growing complexity has led to the
introduction of Primarion Digital Power Management (DPM) solutions with increased accuracy, realtime monitoring and control capabilities via digital communications bus. The simplified system design
the DPM solution provides leads to lower cost and higher performance implementations.
HS Driver
DISB
VSW/PHASE
HS
Logic
VCIN
Shoot Through
Protection Unit
LS
Logic
SMOD
LS Driver
IC Driver
CGND
Primarions Core Power ICs are designed into voltage regulator modules (VRMs) and motherboards for
leading server original equipment manufacturers (OEMs) and are currently shipping into major server
OEM systems to power CPU and GPU.
Primarions digital power system-level solutions enable improved digital control features: better
accuracy and use of lower cost passive components through adaptive digital calibration, improved
ability to respond to fast changes in power requirements (transients) using fewer external capacitors
with proprietary Active Transient Response (ATR), and easier design-in with a graphical user interface.
Primarions overall solution requires substantially fewer components and associated costs as
compared to current analog power solutions.
Input
Logic
3-State
PWM
Low Voltage
Level
Shifter
GH
GL
PGND
High Voltage
BOOT
VIN
Infineon/Primarion PowerCode is a software tool which greatly simplifies the configuration and
performance optimization of Infineon digital controllers. It provides an intuitive Graphical User
Interface (GUI) that runs on Microsoft Windows. The program comes with an automated design wizard
that guides design engineers through the process of configuring single or multi-chip systems. Factory
default configurations are supplied which can be easily modified through a variety of dialogs. Range
checking and error detection ensure proper configuration.
Current Sense network design

Phase and Frequency adjustment
Input and Output settings
Access to PMBus programming
Packages
Power ICs
Additional features included are:

Chip detection
Real-time telemetry and temperature information
Fault detection and clearing
System file editing
Bode plots and load models
Silicon Carbide
UVLO
VDR
IGBT
VCIN
Applications
Digital Controllers for Core and Memory Power
DrMOS application diagram
88
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89
Lighting ICs
TDA21801
Smart Ballast Controller
With the fan speed controller TDA21801, essential system monitoring features of switched mode power
supplies (SMPS) such as adjustable minimum fan speed, fan ON/OF and overtemperature protection
(OTP) can be easily implemented. Only few external components added to the IC are necessary for it.
Smart Ballast Control ICs from Infineon integrate all of the lamp start, run and protection features
required by current and future Fluorescent Lamp Ballasts. Digital Mixed Signal Power Control is
employed enabling speedy, cost effective and stable ballast designs with the minimum of external
components. Reliable and robust high voltage isolation is achieved using Infineons proprietary
Coreless Transformer Technology (CLT).
The TDA21801 is designed for applications using 3- or 4-wire fan solutions like PC silver boxes,
Server silver box AC/DC converter and industrial/medical power supplies.
Applications
Fan Speed Controller
Features
In combination with 2-wire fans same
functionality as 4-wire fan solution
Overtemperature protection feature to protect
system
and power supply
Adjustable minimum fan speed (750 to
4000rpm)
Fan speed can be increased by external PWM
or analogue signal
SO-8 Package/RoHS compliant
Intelligent Digital/Mixed Signal Power Control

Integrated High Voltage Half Bridge Driver
All Parameters set using only resistors
Highly accurate timing and frequency
control over a wide temperature range
High Voltage
Benefits
Full control over fan speed due to precision
reference
Low system cost when replacing 4-wire fans
Reduced noise level
Increased safety of power supplies
Low Voltage
Integrated High Performance PFC Stage
Packages
Power ICs
IGBT
Silicon Carbide
PFC Controller
Ballast Controller
HV-Driver
90
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91
Fixed
0-2500ms
02000ms
Fixed
Applications
Short Form Data

Package
Operating voltage range
Turn-on threshold
Supply current during UVLO and fault mode
Operating frequency of inverter during RUN mode
Operating frequency of inverter during preheating mode
Preheating time
Adjustable self-adapting dead time max between LS and HS gate drive
Adjustable self-adapting dead time min between LS and HS gate drive
Operating voltage range of floating HS gate drive
LS Current limitation threshold: Ignition/start up/soft start/pre run
LS Current protection threshold during RUN mode and preheating
End-of-life detection threshold
Detection of non-ZVS operation CapMode 1 & 2
PFC preconverter control with critical and discontinuous CM
Maximum controlled on-time
Hysteresis of zero current detector
PFC Current limitation threshold
Reference voltage for control of bus voltage
Overvoltage detection threshold
Undervoltage detection threshold
Open loop detection
Junction operating temperature range
Pb-free lead plating RoHS compliant
min.
10V
20kHz
FRFRUN
0ms
2.25s
1.00s
-900V
1.5V
0.75V
-40A
typ.
SO-19
14V
110A
2.50s
1.25s
1.6V
0.80V
170A
120kHz
150kHz
2500ms
2.75s
1.50s
+900V
1.7V
0.85V
+40A
18s
2.47V
2.68V
1.835V
0.237V
-25C
22.7s
1.0V
1.0V
2.5V
2.73V
1.88V
0.31V
26s
2.53V
2.78V
1.915V
0.387V
+125C
Low Voltage
Product Highlights
Critical Conduction Mode PFC with overcurrent
and overvoltage protection and internal loop
compensation
Very low THD and harmonic distortion for low power
application in DCM
Improved ignition control for an operation close to
the magnetic saturation
High reliability and minimized spread due to digital
and optimized analog control functions
Adjustable End-of-Life Detection in Multi Lamp
Topologies and detection of Capacitive Mode
Operation
Meets Emergency Lighting Standards
Suitable for Dimming
High Voltage
ICB1FL02 G
max.
17.5V
Packages
Dramatically reduced time for key

tests such as End of Life detection,
preheat / Ignition Timeout and Pre
Run operation modes
Enables Ballast compatibility
Separate adjustable levels of
Lamp Overload and Rectifier Effect with a wider range of lamp types.
Enhanced functionality with series
detection.
connected lamps
Adjustment of the preheat time
Flexible support of both Current
and Voltage mode pre-heating
No High Voltage Capacitor required Reduced BOM costs
for detection of Lamp removal
(Capacitive mode operation)
Intelligent discrimination between Lamp can automatically restart
Surge & EOL events
following surge events without
compromising End of Life event
handling
Skipped preheating when line
Meets standards for
interruption < 500ms.
emergency lighting
(according to DIN VDE 0108)
Excellent dynamic PFC performance Suitable for Dimming & Multi
enables very low THD across wide Power Ballasts
load ranges
Self adapting Dead Time
Eases design of Multi-Power
adjustment of the Half Bridge
Ballasts and reduces EMI
driver.
One single restart at fault mode
Enhanced reliability of ballast
ICB2FL01 G
Silicon Carbide
Benefit
Reduced Lamp Choke Size
(BOM costs)
Infineons 2nd Generation Smart Ballast Controller

ICB2FL01 G is designed to control a fluorescent
lamp ballast including
Power Factor Correction (PFC)
Lamp Inverter Control and
High voltage level-shift half bridge driver
with Coreless Transformer Technology<
in one package
IGBT
Feature
Stable operation during ignition
even close to magnetic saturation
of the resonant choke.
Special In-circuit test mode for
faster test time.
ICB2FL01 G
Power ICs
Feature Comparison 1st & 2nd Generation

Smart Ballast Controllers
92
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93
ICB2FL03 G
ICB2FL01 G
Infineonss latest Smart Ballast Controller ICB2FL03 G in SO-16 offers very similar performance and
feature set compared to the well established SO-19 product ICB2FL01 G
Excellent dynamic PFC performance enables very
Benefits
Optimized lamp choke size and reduced BOM
costs
Dramatically reduced time for key tests such as
end of life detection, preheat/ignition timeout
and pre rung operation modes
Suitable for dimming and multi-power ballasts
Package
Driver capability
Lamp connection
ICB2FL03 G
SO-16 small body
650V
single and series
ICB1FL01 G
SO-19 wide body
900V
sinle, series and parrallel
Low Voltage
Features
Able to handle lamp chokes with higher
saturation behavior
Special in-circuit test mode for faster test time
Applications
Smart Ballast Controller
low THD across wide load ranges

Enables ballast compatibility with a wider range
rectifier effect detection

Adjustment of the preheat time
Flexible support of both current and voltage
No high voltage capacitor required for detection
Reduced BOM costs
of lamp types
mode preheating
of lamp removal (capacitive mode operation)

overcurrent events
Skipped preheating when line interruption
< 500ms
Self adapting dead time adjustment of the half
bridge driver
One single restart at fault mode
Intelligent discrimination between surge & half
ICB1FL02 G is Infineons 1st Generation Ballast Controller. As performance, feature set and BOM savings
have been greatly improved in Infineons 2nd Generation ICs, it is recommended to use those in new
designs.
bridge overcurrent events

Meets standards for emergency lighting
(according to DIN VDE 0108)

Eases design of multi-power ballasts and
reduces EMI
Silicon Carbide
Automatically restarts by surge and inverter
ICB1FL02 G
High Voltage
Separate adjustable levels of lamp overload and
Enhanced reliability of ballasts
ICB2FL02 G
ICB1FL01 G
Activated
yes
max. 120kHz
1.05s to 2.5s
-100mV
-100mV
Power ICs
ICB2FL02 G
Deactivated
Optimized
max. 140kHz
1.05s
-50mV
-50mV
Packages
Function
Cap load 1 protection
Suitable for Dimming
Max adjustable run frequency
Adjustable dead time
Dead time detector level
Capacitive mode 2 detector level 3
IGBT
The ICB2FL02 G is functionality identical to the ICB2FL01 G with adjustments to certain timings and
parameters to further optimize performance in dimming ballasts.
94
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95
LED Driver for General Lighting
1ED020I12-F
1ED020I12-F2
ICL8001G / ICLS8082G
Single channel isolated gate driver

Basic isolation according to EN60747-5-2,
recognized under UL1577
Fully functional at transient +/- 1420V and static
voltages of +/-1200V
High voltage side status feedback
2A sink and source rail-to-rail output
Max. Tj = 150C
Package SO16 300mil
Protection functions:
Desaturation detection
Active Miller clamp
Under voltage lockout
Shut down
Watchdog timer

Same functions and features as 1ED020I12-B2
Functional isolation of 1200V
1ED020I12-B2*

Same functions and features as 1ED020I12-BT
Functional isolation of 1200V
Features
High and stable efficiency over wide operating range
Optimized for trailing- and leading-edge dimmer
Precise PWM for primary PFC and dimming control
Power cell for VCC pre-charging with constant current
Built-in digital soft-start
Foldback correction and cycle-bycycle peak current limitation
VCC over-/undervoltage lockout
Auto restart mode for short circuit protection
Adjustable latch-off mode for output overvoltage protection
ICLS8082G
R1
C11
VR
ZCV
VCC
ICL 8001G
Continuous Mode
DIM Control
PFC
N.C.
PWM-Control
Protection
Gate Driver
GND
HV
Start-Up
Cell
R19
Q1
R17
L1
R5
C1
L2
C12
C17
R6
R3
CS
N1 N3
D5
C15
C18
ZCV
Continuous Mode
DIM Control
PFC
R2
N2
CVCC2
RDY
C5
PWM-Control
Protection
Gate Driver
CDESAT
RST
Start-Up
Cell
To control
logic
Gate
CS
+5V
CVCC2
GND
Low Voltage
DDESAT
GATE
VCC
GND
R4
RDESAT
DESAT
/FLT
GND
Drain
VCC
GND
+15V
VCC2
VLED
BR1
VR
+5V
C25
R6
D6
ICLS8082G
GD
Dual channel isolated gate driver

Same functions and features as two times
1ED020I12-F2
Package SO36 300mil
IGBT
VLED
VIN
2ED020I12-F2*
Typical application 1ED020I12-F

D21
T1
VIN Detection
VIN
1ED020I12-FT*
ININ+
DProt
RG
GND2
VEE2
Power ICs
ICL8001G

Same functions and features as 1ED020I12-F
Enhanced desaturation detection with 500A

Same functions and features as 1ED020I12-F
Adjustable two level turn-off function
Desaturation detection with 500A
High Voltage
Benefit
ICL8001G simplifies LED driver implementation at best-in-class BOM costs
ICLS8082G integrates CoolMOS switch
1ED020I12-BT*
Silicon Carbide
ICL8001G / ICLS8082G are designed for off-line LED lighting applications with high efficiency
requirements such as incandescent bulb replacements (40/60/100W) and lamp retrofits. Infineon
provides a single stage flyback solution with PFC and dimming functionality. Innovative primary control
techniques combined with accurate PWM generation for phase cut dimming enable solutions with
significant reduced component count on a single sided driver PCB for smallest form factor.
Applications
Driver ICs
CLAMP
1ED020I12-F
Packages
* in development
96
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97
1200V Isolated high side half bridge gate driver

Galvanic isolation of high side driver
2A sink current, 1 A source current
Fully functional at transient and static voltages
of +/-1200V
Integrated operational amplifier and comparator
Matched delay times of high side and low side
Max. Tj = 150C
Package SO18 300mil
Protection function:
Hardware input interlocking
Shut down function
650V isolated high side half bridge gate driver

Galvanic isolation of high side driver
2A sink current, 1 A source current
Fully functional at transient and static voltages
of +/-650V
Matched delay times of high side and low side
Max. Tj = 150C
Package SO18 300mil
Protection function:
Hardware input interlocking
200V and 600V 3-phase gate driver

Ultra fast integrated bootstrap diode
Fully functional at neg. transient voltages down to -50V (500ns)
Programmable restart after over current protection
Shut down of all outputs in case of UVLO, OCP
Package SO28 300mil (600V) and
package TSSOP28 (200V)
Protection functions:
Over current protection (OCP)
Hard ware input interlocking
Under voltage lockout (UVLO)
Fixed hard ware dead time of
Typical application 6ED003L06-F
high side and low side
Enable function
VCC
Pin compatible variants
HIN1,2,3
of first generation available
LIN1,2,3
FAULT
EN
Applications
6ED family 2nd generation
Low Voltage
2ED020I06-FI
DC-Bus
VCC
HIN1,2,3
LIN1,2,3
FAULT
EN
VB1,2,3
LIN1,2,3
HO1,2,3
FAULT
To Load
VS1,2,3
RRCIN
EN
LO1,2,3
RCIN
ITRIP
VSS
COM
6ED003L06-F
Silicon Carbide
CRCIN
VCC
HIN1,2,3
High Voltage
2ED020I12-FI
R Sh
VSS
Driver ICs Features / Parameters
600V
1200V
6ED003L02-F
6EDL04N02PR
6ED003L06-F
6EDL04I02NT
6EDL04I02PT
6EDL04N02PT
2ED020I06-FI
1ED020I12-F
1ED020I12-F2 / B2 *
1ED020I12-FT * / BT *
2ED020I12-FI
2ED020I12-F2 *
Supply Voltage Range

Integrated
Driver
bootstrap diode
11V - 20V
9V - 20V
11V - 20V
11V - 20V
11V - 20V
9V - 20V
11.2V - 20V
-12V - 0V / 11V - 20V
-12V - 0V / 11V - 20V
-12V - 0V / 11V - 20V
11.2V - 20V
-12V - 0V / 11V - 20V
typ. Source / Sink

Current
0.17A / 0.38A
0.17A / 0.38A
0.17A / 0.38A
0.17A / 0.38A
0.17A / 0.38A
0.17A / 0.38A
1A / 2A
2A / 2A
2A / 2A
2A / 2A
1A / 2A
2A / 2A
typ. Application
PWM Frequency
up to
20kHz
20kHz
20kHz
20kHz
20kHz
20kHz
200kHz
100kHz
100kHz
100kHz
200kHz
100kHz
Logic Supply
13V - 17.5V
10V - 17.5V
13V - 17.5V
13V - 17.5V
13V - 17.5V
10V - 17.5V
14V - 18V
5V
5V
5V
14V - 18V
5V
Seperated
Input Logic Interlock
SGND / PGND
neg.
pos.
neg.
neg.
pos.
pos.
pos.
pos. / neg.
pos. / neg.
pos. / neg.
pos.
pos. / neg.
typ.
Dead
Time
310 ns
310 ns
310 ns
310 ns
310 ns
310 ns
0 ns
0 ns
OCP /
DESAT
Fault
*1
EN / SD
/ RST
RDY
*2
OCP
OCP
OCP
OCP
OCP
OCP
DESAT
DESAT
DESAT
OCP
DESAT
T
T
T
T
T
T
L
L
L
Two
Level
Turn Off
IGBT
200V
Channels
/ Isolated
Channels
6/3
6/3
6/3
6/3
6/3
6/3
2/1
1/1
1/1
1/1
2/1
2/2
Power ICs
Products
98
Packages
* in development
*1 Fault signal appears L = Latched or T = Temporary latched, adjustable mono flop
*2 RDY Signal shows driver has passed UVLO at input and output and communication is ready
For automotive qualified parts please see www.infineon.com/eicedriver
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99
ISOFACE Galvanically Isolated Digital Input Interface ICs

for Automation
ISOFACE Galvanically Isolated Switches

for Automation
ISO1I811T
ISO1I813T
ISO1H811G / ISO1H812G
ISO1H815G / ISO1H816G
Features
8 channel digital input (IEC Type 1/2/3
Benefits
Compact system solution
Integrated galvanic isolation (500V)
No need for opto-couplers
75% less PCB area

30% lower eBOM
Features
8 channels:
0.6 or 1.2A, each
Parallel outputs (optional)
Benefits
Compact system solution
Supports wide range of loads
Integrated galvanic isolation (500V)
No need for opto-couplers
Inductive load switching
High-precision applications
50% less PCB area

30% lower eBOM
High-speed applications
Programmable deglitching input filters
9 different settings
Individually per channel
Superior EMI robustness through
application-specific settings
Diagnostic feedback
Integrated short-circuit protection
Fail save
Diagnostic feedback:
System status feedback
Over-temperature
Over-load
Under-voltage
Excellent maintenance support
Wire-break,
individually per channel
Supply undervoltage
Silicon Carbide
Galvanic isolation
Signal processing
C interfacing
Fully integrated system solution for

Galvanic isolation
Logic
Driver
High Voltage
Fully integrated system solution for
Low Voltage
8-Channel Isolated High-Side Switch for Industrial Applications:
8-Channel Isolated and Fully Integrated Digital Input Interface IC:
Up to 500kHz sampling speed
Applications
Isolated Interfaces
Maintenance support
Controller interface:
Directly interfacing with all
Processors and Controllers
IGBT
3.3V and 5V
Parallel and serial
Type
Key Differences
Max. input
signal
frequency
125kHz
ISO1I813T
500kHz
common for all

channels
individual per
channel
Number of
different filter
time settings
Diagnostics
SP-Number
--
SP000876494
wire-break,
channel-specific
SP000876504
Type
ISO1H811G
ISO1H812G
ISO1H815G
ISO1H816G
Load Current
0,7A
0,7A
1,2A
1,2A
C Interface
parallel
serial
parallel
serial
SP-Number
SP000413798
SP000413800
SP000555576
SP000555578
Packages
ISO1I811T
Filter
time setting
Power ICs
Key Differences
100
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101
Power Audio
Digital Input Class-D
Power Audio Amplifier with DSP
right
The high resolution 512TAP FIR Filters allow parametric frequency equalization and/or digital frequency
bridge filters without adding non-linearities or phase distortions. The device is available in a thermal
enhanced 10 x 10 mm VQFN 68 pin package for heatsinkless operation.
Target Markets
Flat Panel - TVs
Active Speakers, Soundbars
Mini Combo & Portable Electronics
Digital PCM and MPEG Media Streaming
Multichannel Audio Consumer Speakers
HD Audio &DSP Driven Consumer Devices
(Blue Ray/DVD)
AV/DVD Receivers and AV Amplifiers
Power
Stage
D-ADC
Dyn Vol
OCP, OTP
Subwoofer
Low Voltage
left
LCD-TV Applications Options Power Supply PCB

Digital Platform Combination
15 to 24V
PFC
Control
Inverter
CCFL
Backlight
LED
Backlight
Lamp Driver
Video & Signaling PCB
Combi IC
LCD
Panel
Sub
CoolSETTM
Power
Supply
DC/DC
Converter
12V
LCD
Control
DC/DC
Converter
3.3V
Video
Signal
I2C
Micro
Processor
SPDIF
Audio
DSP
Class D
SAB240x
USB to SPDIF
Accessory
&
Control
Interfaces
HDMI
Nx
SCARTline in
I2S
Class D
SAB240x
Active Speaker Application

Optional
SPDIF or I2S
Audio DSP
Class D
SAB240x
or
right
left
System
Controller
SPDIF or I2S
or Network Interface
Device
Class D
SAB240x
Center / or
Subwoofer
USB to SPDIF
Analog Line In
(optional)
Infineon Power
Management Solutions
10 to 28V
Packages
Development Support
PCB Reference Designs (EMI approved)
API Command Interface
PC SW Tool to create Filter Functions
Evaluation Boards
Documentation & Application Notes
C 8051
Class-D
Audio
Chain
High Voltage
A unique 2.1 Stereo Subwoofer Mode can be implemented with one device on the same stereo PCB
footprint and with no additional discrete components. This allows to save one amplifier device. A
feature commonly requested in Flat Panel TVs & Mini-Combo Active Speaker Audio Appliances.
I2C
512Tap
FIR
for
slim
speakers
Silicon Carbide
The digital input interfaces S/PDIF for long wires or Optical (TOS-Link) Input as well as the I2S Chip
to Chip interface take the incoming PCM Audio data with up to 96kHz (192kHz) via a jitter removing
self adopting variable sample rate converter to the 24 Bit wide digital audio processing chain. After
the sound and volume control stage the monolithic integrated output power stages work with supply
voltages from 10V to 27V ;
heatsinkless up to 2 x 25WRMS or 1 x 50 WRMS or 2 x 10WRMS & 1 x 20WRMS on RL 4 or 8
with heatsink up to 2 x 50WRMS or 1 x 100WRMS or 2 x 15WRMS & 1 x 50WRMS on RL 4 or 8
Sample
Rate
Conversion
IGBT
The SAB 2402 / SAB 2403 ICs are high performance energy efficient digital and analog input high
dynamic range open loop Class-D speaker amplifiers. Phase-neutral 512TAP FIR digital Filter & Signal
Processing features are included for optimizing sound in slim form factor driven Speakers like in Flat
Panel TVs & Active Speaker designs.
SPDIF
I2S
Input
Power ICs
SAB2402 / SAB2403
Product Highlights
Reduced System BOM
BTL differential outputs, no coupling C
Footprint compatible 2.1 Subwoofer mode
High Quality Audio typ. 100dB SNR
Low THD less than 0,3% THD at max 25W; 0,03%
THD at 2.5 W @ 1kHz
Digital Input SPDIF + I2S with 32kHz up to
96 kHz (*I2S up to 192kHz)
3x 512tap / 6x 256tap FIR filter bank for slim
speaker equalization
Comes with simple fast PC Tool for speaker
tuning & DSP target filter generation
Easy to use I2C Command Interface
Up to 8 GPIOs
Applications
SAB 240x True Monolithic Integration + Power
102
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103
Naming System
FL
Integrated Circuit
Package Type:
G = SO Package
Application
Ballast
Design Step
Series
Type of Lamp, e.g.

FL = Fluorescent
F
Extension
F = Functional Isolation
FA = Functional Isolation,
Automotive qualified
FTA = Functional Isolation,
Two Level Turn O,
Automotive qualified
Function
ED = IGBT/MOSFET Driver
Voltage Class
02 = 200V
06 = 600V
12 = 1200V
Peak Output Curret for Driver

020 = 2A
300 = 30A
Type
I = IC (Coreless Transformer)
L = IC (Level Shifter)
Product Generation
Package Type
G = SO Package
T = TSSOP Package
Series
Product Class
H = Isolated High-Side Switches
L = Isolated Low-Side Switches
C = Isolated CMOS Interfaces
I = Isolated Input Interfaces
Versions
0 = 5V
1 = 3.3V/5V
2 = 3.3V/5V
(2.5kV Isolation)
ISO = Coreless Transformer

Isolation Technology
12
Silicon Carbide
IGBT
020
Driver Channels
1 = Driver for one floating gate
2 = Driver for Half-Bridge
6 = Driver for Six-Pack
Isolated Interfaces (ISOFACE TM)

ISO
ED
Low Voltage
Applications
Driver ICs (EiceDRIVERTM)
High Voltage
Lighting ICs
Packages
Power ICs
Channels
8 = 8 Channels
4 = 4 Channels
104
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105
Top and bottom side cooling of SMD devices
ThinPAK new leadless SMD package for high voltage MOSFETs
For LV MOSFETs different SMD packages like SuperSO8 and CanPAK are available. If the cooling system
is designed for main heatflow to the PCB both packages will show similar thermal performance. If the
main heat flow is to the top side the CanPAK is the better choice since the thermal resistance to the
top side is lower (Rth_top_CanPAK ~ 1 K/W, Rth_top_SuperSO8 ~ 20 K/W)
The new package features a very small footprint of only 64 mm2 (vs. 150 mm2 for the D2PAK) and a
Top side cooling
top
Heatsink
top
60 % footprint reduction - 80 % height reduction
Package
bottom
Thermal performance
CanPAK ~ SuperSO8
PPCB < Pheatsink
High Voltage
D2PAK ThinPAK
PPCB > Pheatsink

bottom
Thermal performance
CanPAK > SuperSO8
10 x 15 x 4.4 mm
Example: High performance Server
(PCB: 8 layer, 70 m)
8 x 8 x 1 mm
Example: Motherboard (PCB 4 layer, 35 m)

with high performance heatsink
Silicon Carbide
PCB
very low profile with only 1 mm height (vs. 4.4 mm for the D2PAK). This significantly smaller package
size with ist benchmark low parasitic inductances can be used as a new and effective way to
decrease system solution size in power-density driven systems
A well designed thermal system is required to achieve high power handling capability.
The recommended design is a thin PCB with may vias and a heatsink attached to the backside of the
PCB. A high number of thermal vias is needed to reduce the thermal conduction resistance through
the board
Low Voltage
Bottom side cooling
Applications
Packages
Thermal cooling system for ThinPAK 8x8

ThinPAK 8x8
PCB
with
thermal
vias
Packages
Power ICs
IGBT
Thermal Interface material

heatsink
106
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107
Applications
New package TO-247HC

The TO-247HC is a package with an increased creepage distance (potential replacement for TO-247).
If the TO-247 doesnt comply to the creepage distance requirements the customer can choose the TO247-HC without taking any measures the improve the package isolation (e.g.: potting)
High Voltage
1)
New IGBT technology RCD allows highest power density with

small SMD packages
CoolMOS in ThinPAK 8 x 8
Silicon Carbide
2)
The new leadless SMD package for CoolMOS
The new IGBT RCD technology in combination with an efficient cooling system allows to use small SMD
packages which enable to build compact systems with increased power density.
Infineon Technologies introduces the ThinPAK 8 x 8, a new leadless SMD

package for HV MOSFETs. The new package has a very small footprint of only 64 mm
(vs. 150 mm for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4mm
for the D2PAK). This significantly smaller package size in combination with its
benchmark low parasitic inductances can be used as a new and effective way to
decrease system solution size in power-density driven designs.
In order to improve the heat dissipation, thermal vias are integrated in the PCB under the device case
which results in a low thermal resistance to the opposite side of the PCB. A heatsink complements the
cooling system. Isolation to the heatsink is realized with a thermal foil. With this cooling system power
dissipation up to 7 to 10 W / IGBT is achievable which corresponds to ~ 2 kW application systems.
Power ICs
Key features and benefits of Infineons ThinPAK:

Extremely small footprint (8 x 8 mm) and very low profile (1 mm)
60 % reduced board space consumption and highly increased power density
Very easy to use and short commutation loop
Separate driver source pin and lowest parasitic inductance
IGBT
3)
4)
Low Voltage
1) pin length 20mm like TO-247

2) pin width / thickness 1.2mm / 0.5mm is TO-247 / TO3P-compatible
6.35mm creepage distance of leads at package body
3) isolated screw hole like TO-247 / TO3P
4) 14.8mm nominal distance screw hole to pin out plane is the same
as at TO-247 / TO3P
Very smooth switching waveform

Halogen free mold compound and RoHS compliant
108
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[ www.infineon.com/coolmos ]
Packages
109
Package (JEITA-code)
X
LxWxH
PIN-Count
15.5 x 6.5 x 2.3
IPAK SL (TO-251 SL)

3
10.7 x 6.5 x 2.3
I2PAK (TO-262)
3
25.1 x 10 x 4.4
TO-220 real 2pin

2
29.15 x 10.0 x 4.4
TO-220 2pin
2
29.1 x 9.9 x 4.4
TO-220 3pin
3
29.15 x 10.0 x 4.4
TO-251
Package Outline
6.5 +0.23
-0.15
21.7 x 9.9 x 4.4
26.1 x 9.9 x 4.4
40.15 x 15.9 x 5.0
TO-247HC
3
37.6 x 13.6 x 4.5
DPAK (TO-252)
3
9.9 x 6.5 x 2.3
4.96 0.26
5.410.37
TO-247
2.3 +0.11
-0.14
B
0.9 -0.44
0.1
9.3 +0.35
-0.41
29.6 x 10.5 x 4.7
TO-220-6-47
6.22 -0.25
TO-220-6-46
1 +0.37
-0.11
5.4 +0.1
-0.45
TO-220 FullPAK
Applications
IPAK (TO-251)
3
All Dimensions in mm
Low Voltage
Packages
Reverse DPAK (Rev. TO-252) DPAK 5pin (TO-252 5pin)

3
9.7 x 6.6 x 2.34
9.9 x 6.5 x 2.3
D2PAK (TO-263)
3
15.0 x 10.0 x 4.4
D2PAK 7pin (TO-263 7pin)

7
15.0 x 10.0 x 4.4
SO-8/SO-8 dual
8
5.0 x 6.0 x 1.75
SO-16/12
12
0.5 +0.1
0.9 0.25
10.0 x 6.0 x 1.75
0.25 M A B
3 x 0.75 +0.14
-0.11
2.29
1.0 +0.14
-0.10
4.57
SO-14
14
8.75 x 6.0 x 1.75
SO-16
16
10.0 x 6.0 x 1.75
SO-18
18
12.8 x 10.3 x 2.65
SO-19
19
12.8 x 10.3 x 2.65
SO-20
20
12.8 x 10.3 x 2.65
High Voltage
All metal surfaces tin plated, except area of cut.
SC59
3
3.0 x 2.8 x 1.1
Marking Layout
2.9 x 2.4 x 1.0
SOT-89
3
4.5 x 4.0 x 1.5
SOT-223
4
6.5 x 7.0 x 1.6
SOT-323
3
2.0 x 2.1 x 0.9
SOT-363
6
2.0 x 2.1 x 0.9
TSOP-6
6
2.9 x 2.5 x 1.1
H = RoHS compliant + halogen-free

G = Green Product / RoHS compliant
Manufacturer
S3O8
8
3.3 x 3.3 x 1.0
WISON (PowerStage 3x3)

8
3.0 x 3.0 x 0.8
SuperSO8
8
5.15 x 6.15 x 1.0
SuperSO8 dual
8
5.15 x 6.15 x 1.0
VSON (ThinPAK)
4
8.0 x 8.0 x 1.0
Production lot code
Pin 1
CanPAK S-Size
6
Type code
Date code (YWW)
1234567
AA
R
Silicon Carbide
SOT-23
3
4.8 x 3.8 x 0.65
Packing
6.3 x 4.9 x 0.65
TDSON-10
10
3.0 x 3.0 x 0.9
DIP-7
7
9.52 x 8.9 x 4.37
DIP-8
8
9.52 x 8.9 x 4.37
DIP-14
14
19.5 x 8.9 x 4.37
DIP-20
20
Pieces/Tube: 75
IGBT
CanPAK M-Size
7
24.6 x 9.9 x 4.2
(7)
Window
33.5 -0.5
TSSOP-48
12.5 x 6.1 x 1.1
36
15.9 x 11.0 x 3.5
IQFN-40
40
6.0 x 6.0 x 0.8
TSSOP-28
28
9.7 x 6.4 x 1.2
DSO-28
28
18.1 x 10.3 x 2.65
VQFN-68
68
10.0 x 10.0 x 0.9
Power ICs
48
DSO-36
110
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All dimensions in mm
Packages
All products are available in green

(RoHS compliant).
< Back to overview
111
TO-251-3
DPAK
0.1
0.5 +0.08
-0.04
A B
0...0.15
0.75 +0.14
-0.11
0.25 M A B
0.9 +0.24
-0.1
3 x 0.75 +0.14
-0.11
0.9 +0.08
-0.44
0.1
0.9 0.25
0.9 0.25
0.25
5.43 0.41
0.8 +0.2
-0.29
3.5 0.1
0.5 +0.39
-0.04
4.96 0.26
6.22 -0.25
5 0.1
2.3 +0.11
-0.14
+0.1
5.4 -0.4
1 +0.25
-0.10
2.3 +0.09
-0.12
9.9 +0.58
-0.50
5.4 +0.1
-0.45
1 0.1
6.22 -0.25
5.24 0.2
10.1
6.5 +0.23
-0.15
6.5 +0.23
-0.10
Low Voltage
Applications
Package Outline
1.44 0.26
Package Outline
0.5 +0.1
-0.04
2.29
4.57
2.29
4.57
High Voltage
Foot Print
5.8
1.2
5.76
Production lot code
Pin 1
Silicon Carbide
Type code
Date code (YWW)
1234567
AA
R
Marking Layout
Packing
Type code
Date code (YWW)
1234567
AA
M

Manufacturer
Pieces/Tube: 75
Production lot code
Pin 1
IGBT

Manufacturer
2.2
10.6
6.4
Marking Layout
Packing
Window
(7)
Reel 330mm = 2.500 Pieces/Reel
0.3
6.9
Power ICs
10.5
16 0.3
33.5 -0.5
2.5
2.7
Packages
112
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113
Reverse DPAK
DPAK 5pin
0.51 MIN.
4.56
0.1
0.25
A B
Foot Print
2.2
10.6
2.2
6.4
5.8
6.4
0.8
1.2
5.76
Marking Layout
1234567
AA

Manufacturer
Pin 1
Type code
Date code (YWW)
Type code
Date code (YWW)
1234567
AA
M

Manufacturer
Pin 1
Production lot code
Packing
IGBT
Marking Layout
Silicon Carbide
5.36
Production lot code
Packing
0.3
0.3
6.9
10.5
16 0.3
10.5
16 0.3
6.9
2.5
2.7
Power ICs
10.6
5.8
High Voltage
Foot Print
0.5 +0.08
-0.04
5 x 0.6 0.1
1.14
0.51 +0.07
-0.05
2 x 2.29
1 0.1
0...0.15
0.8 0.15
0.6 0.09
0.5
0.15 MAX.
per side
0.0...0.15
0.8 +0.09
-0.17
0.25 M A B
1 0.1
0.89 +0.09
-0.43
5.4 0.1
(4.24)
2.34 +0.07
-0.18
5.03 0.18
9.98 0.5
6.22 -0.2
5.25 0.25
9.7 +0.78
-0.3
0.9 0.25
2.3 +0.05
-0.10
6.5 +0.15
-0.10
5.43 0.41
+0.14
6.1 +0.12
-0.13 1 -0.10
6.6 +0.13
-0.20
Applications
Package Outline
Low Voltage
Package Outline
2.5
2.7
Packages
114
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115
TO-220 2pin
TO-220 3pin
Package Outline
+0.36
4.4 0.1
2x
0.75 0.1
5.08
0.9 0.25
0.25 M A B C
A B
Low Voltage
2.4 +0.32
-0.25
Marking Layout
Pin 1
12345678
Date code (YWW)

Production lot code
Mold chassis
Identification code
Manufacturer
A 39
Pin 1
Packing
Packing
Pieces/Tube: 50
Pieces/Tube: 50
Type code
Date code (YWW)
Production lot code
Mold chassis
Identification code
Silicon Carbide
A 39
AA
Manufacturer
Type code
IGBT
12345678
AA
Marking Layout
+0.11
0.75 -0.10 3x
0.25
1.05 0.1
High Voltage
2 x 2.54
9.25 -0.74
+0.10
0.5 -0.17
1.18 0.23
2.4
+0.20
0.1
4.8 MAX.
0.5 0.1
0...0.15
+0.17
4.4 -0.10
+0.13
1.27 -0.10
+0.15
170.3
15.65 -0.84
3.5 0.2
+0.30
0.36 M A B
+0.19
3.7 -0.1
2.8 0.2
1.27 0.1
0.05
2.4 0.1
+0.1
8.5 -2
12.95 -0.76
2.8 0.2
0...0.3
+0.36
9.9 -0.30
13.5 0.5
12.95
17 0.3
3.7 -0.15
15.65 0.3
10 -0.30
13.5 0.5
10 0.2
9.9 0.2
8.5
1.29 0.1
Applications
Package Outline
Window
(7)
(7)
Window
33.5 -0.5
Power ICs
33.5 -0.5
Packages
116
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117
TO-220 FullPAK
TO-220-6-46
2.7 0.15
8.6 0.3
1)
7.62
0...0.15
0.25
0.5 0.1
A B
6 x 0.6 0.1
2.4
5.3 0.3
4 x 1.27
1.08 0.43
2.54
0.381
1) Shear and punch direction no burrs this surface

Back side, heatsink contour
A B
8.4 0.3
Marking Layout
Type code
Date code (YWW)
Production lot code
1234567890
AA
Manufacturer
Pin 1
a 39
AA
Manufacturer
Type code
Date code (YWW)
12345678
Pin 1
Mold chassis Identification code
Packing
Pieces/Tube: 25
Pieces/Tube: 50
IGBT
Fab code
Packing
Silicon Carbide
Marking Layout
High Voltage
3x
0.7 +0.15
-0.05
Low Voltage
2.57 0.15
1.3 +0.1
-0.02
0.05
3.3 0.15
-0.152
1.14 0.19
4.4
12.10.3
45
9.681 +0.149
-0.151
0.36
B A
+0.2
13.6 0.15
1.23 0.28
0.5 +0.13
-0.10
0.99 0.34
10.2 0.3
6.6
3 +0.2
-0.05
A
3.3 -0.15
15.99 -0.14
+0.16
10.5 0.15
9.9
7.5
4.7 0.15
(0.8)
Applications
Package Outline
9.2 0.2
Package Outline
Window
35 0.2
Power ICs
33 0.4
5.6 0.4
13 0.2
Window
Packages
118
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119
TO-220-6-47
TO-247
Package Outline
+0.23
0.25
6 x 0.6 0.1
+0.06
5.94 -0.45
4.39 0.71
0.5 0.1
A B
2.4
5.3 0.3
4 x 1.27
+0.15
3.60 0.1
0.61 M B A
4.32 -0.22
7.62
0...0.15
0.25 M A B
8.4 0.3
1.2 0.13
+0.41
2 -0.10
1) Shear and punch direction no burrs this surface

Back side, heatsink contour
5.02 0.19
+0.13
2.03 -0.18
Low Voltage
8.6 0.3
1)
20.9
0.05
9.2 0.2
3.7 -0.15
1.8 0.8
20.06 0.26
2.8 0.2
1.3 +0.1
-0.02
15.9 -0.20
13.63 0.53
6.17 0.13
1.2 -0.25
+0.15
4.4
16.95 0.7
13
15.6 0.3
0.62
2.03 0.13
3 0.13
2.4 0.14
+0.46
2.92 -0.05
Marking Layout
High Voltage
5.44
Marking Layout
Type code
Date code (YWW)
Production lot code
1234567890
a 39
AA
Manufacturer
Pin 1
Type code
Manufacturer

H = Halogen-free + RoHS compliant
Date code (YWW)
123456789
AA
Pin 1
Packing
Pieces/Tube: 50
Pieces/Tube: 25
Fab code
IGBT
Packing
Silicon Carbide
17.5 0.3
9.9 0.2
9.5 0.2
7.5
6.6
Applications
Package Outline
13 0.2
Window
39
Power ICs
35 0.2
Packages
120
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121
I2PAK
D2PAK
Package Outline
Applications
Package Outline
+0.17
10 -0.2
+0.1
+0.13
+0.15
0.1 -0.1
1.05 0.1
3 x 0.75 +0.114
-0.100
0.884 0.234
0.254
A B
0.25
2.54
0.5 +0.10
-0.17
+0.15
0.5 -0.17
0.75 0.1
1.05 +0.043
-0.100
Low Voltage
1.175 0.225
13.5 0.5
4.55 +0.25
+0.3
2.7 -0.41
+0.48
1.3 -0.3
+0.35
1.27 -0.1
7.55 -0.45
15 -0.39
+0.88
9.25 +0.20
-0.741
8.5 -2
+0.2
1.27 +0.13
-0.10
1 +0.727
4.4 -0.1
+0.31
4.4 +0.172
-0.100
7.55 -0.65
+0.1
8.5 -2
9.25 -0.74 1 +0.6

-0.3
10 +0.363
-0.300
A B
1.5 6.5
5.08
+0.318
2.4 -0.250
2 x 2.54
Foot Print
High Voltage

10.8
4.6
16.15
9.4
Marking Layout
1.35
Type code
Pin 1
Silicon Carbide
Date code (YWW)

Production lot code
A 39
AA
Manufacturer
3.75
Marking Layout
12345678
Manufacturer
AA
A 39
Packing
Pieces/Tube: 50
Pin 1
Type code
Date code (YWW)
Production lot code

Mold chassis
Identification code
IGBT
12345678
Packing
Window
(7)
0.3
12
10.3
Power ICs
4.75
4.9
Packages
24 0.3
16.1
33.5 -0.5
122
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123
D2PAK 7pin
TO-247HC
A B
4.45 0.1
B
1.45 0.1
1.05 0.1
1.5 6.5
1.05 0.1
1.45 0.1
0.5 0.1
4.25 0.2
3x 1.2 0.1
1.6 0.1
Foot Print
3.61 0.1
1.45 0.1
14.8 0.3
1.45 0.1
3.01 0.1
8.4 0.1
19.25 0.2
13.81 0.3
0.5 0.1
Low Voltage
0.25
6 x 1.27
2.5 0.1
2.5 0.1
2x
5.45
0.3 M A B
High Voltage
6 x 0.6 0.1
+0.15
0.5 -0.17
1.45 0.1
0.75 0.25
18.35 0.3
+0.3
2.7 -0.41
+0.35
+0.15
0.1 -0.1
+0.48
7.55 -0.65
+0.2
0.1
1.3 -0.3
+0.6
1 -0.3
1.27 -0.1
9.25 -0.74
+0.88
15 -0.39
+0.13
+0.1
8.5 -2
6.39 0.2
+0.31
10 -0.2
4.5 0.1
0.45 0.1
11.7 0.1
8.5 0.2
4 +0.1
0
13.6 0.2
+0.17
4.4 -0.1
Applications
Package Outline
14.79 0.1
Package Outline
PG-TOHC-3-1-PO V01
10.8
4.6
16.15
9.4
Marking Layout
0.47
Type code
Manufacturer
Marking Layout
A 39
AA
1234567
Production lot code
Packing
Mold chassis
Identification code
Pin 1
6.4
Packing
Date code (YYWW)

AA
IGBT
Manufacturer
1234567890
Pin 1
Type code
Date code (YWW)
Production lot code
12345678
Silicon Carbide
0.8
0.3
12
40.9
10.3
Power ICs
16.1
24 0.3
PG-TOHC-3-1-TU V01
4.75
4.9
Packages
124
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125
SO-8
SO-16/12
0.41 +0.1
-0.06
Index
Marking 1
6 0.2
Index
Marking
Index Marking (Chamfer)
0.2
Applications
.01
8 MAX.
0.2 +0.05
-0
0.64 0.25
6 0.2
D C 12x
10 -0.2
Foot Print
0.65 0.1
1.31
5.69
1.27
1.27
Marking Layout
Silicon Carbide
5.69 0.1
1.31 0.1
0.65
High Voltage
Foot Print
0.1 2x
8.89
0.41 +0.1
-0.05
12
3.81
0.64 0.25
5 -0.21)
(1.5)
.03
1.27
0.25 M D C 8x
8
8 MAX.
19 MAX.
0.33 x 45
4 -0.2
Low Voltage
0.1 8x
4 -0.2
0.2 +0.05
-0
1.75 MAX.
0.1 MIN.
1.27
1.5 +0.15
-0.25
0.33 +0.17
-0.10 x 45
1.75 MAX.
Package Outline
0.1 MIN.
STAND OFF
Package Outline
Marking Layout
Type code
Mold compound code
Type code
Date code (YYWW)

Pin 1 Marking
Manufacturer

Lot number
Assembly site code (L for AIT)
Pin 1 Marking

Packing
Pieces/Tube: 100
1.75
10.3
16 0.3
12 0.3
5.2
6.4
4.1
0.3
7.7
6.5
2.1
7.7
1.8
2.3
Packages
Pieces/Tube: 50
0.3
Power ICs
4.1
Packing
1234567890123
1234
LMC
XXXXXXXXXXX
IGBT
123456
Date code (YYWW)
126
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127
SO-14
SO-16/12
14
0.1
0.40 +0.11
-0.05
0.64 0.25
16
7
1
8.75 -0.2 1)
0.64
8
0.25
6 0.2
8
10 +0.06
-0.2
4 -0.2 1)
0.2 M A C 16x
0.2
+0.05
-0.03
0.1 MIN.
.01
0.2 +0.05
-0
1.27
C
0.1
0.2 M A C 14x
0.33 +0.17
-0.08 x 45
Low Voltage
1.27
0.41 +0.1
-0.08
x 45
1.75 MAX.
+0.08
-0.17
0.1 MIN.
1.75 MAX.
0.33
4 -0.2
Applications
Package Outline
0.2
Package Outline
1)
Index Marking
Index Marking
Foot Print
5.69
5.69
1.31
0.65
1.31
0.65
High Voltage
Foot Print
Marking Layout
Silicon Carbide
1.27
1.27
Marking Layout
Date code (YYWW)
Type code
Mold compound code

12345678901
LMC
12
XXXXXXXXXXX
Manufacturer
Mold compound code
Manufacturer
Lot number
Assembly site code
Lot number
Assembly site code (L for AIT)
Packing
10.3
9.5
16 0.3
4.1
0.3
Pieces/Tube: 50
0.3
4.1
Pieces/Tube: 50
16 0.3
7.7
7.7
6.5
6.5
1.8
Power ICs
Packing
1234567890123
1234
LMC
XXXXXXXXXXX
Pin 1 Marking

H = RoHS compliant + Halogen-free
Pin 1 Marking
Date code (YYWW)
IGBT
Type code
1.8
2.3
2.3
Packages
128
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129
SO-18
SO-19
18
11
9 x 1.27 = 11.43
19
Seating Plane
19x
11
Applications
0.23 +0.09
0.4 0.1
0.4 +0.87
10.3 0.3
Low Voltage
9 x 1.27 = 11.43
1.27
0.4 +0.87
10.3 0.3
0.25
Gauge Plane
Seating Plane
18x
0.25
Gauge Plane
1.27
1)
0.4 0.1
8 MAX.
0.35 x 45
7.6 -0.2
0.35 x 45
7.6 -0.2
2.65 MAX.
0.2 -0.1
STAND OFF
2.45 -0.2
2.65 MAX.
Package Outline
0.2 -0.1
STAND OFF
2.45 -0.2
Package Outline
Ejector Mark
Depth 0.2 MAX.
Index
Marking
12.8 -0.2
10
Index
Marking
1) Does not include plastic or metal protrusion of 0.15 mm max.
10
12.8 -0.2
Foot Print
9.73
9.73
1.67
0.65
1.67
0.65
High Voltage
Foot Print
1.27
Marking Layout
Silicon Carbide
1.27
Marking Layout
Manufacturer
1234567890
1234567890
XXXXXXXXXXX
Pin 1 Marking
Type code
Manufacturer
Date code (YYWW)

Lot number
Pin 1 Marking
Date code (YYWW)

Lot number
Packing
12
15.4
2.7
3.2
10.9
Pieces/Tube: 39
15.4
2.7
3.2
Packages
0.3
Power ICs
13.3
24 0.3
10.9
Pieces/Tube: 39
6.5 -0.2
0.3
12
13.3
24 0.3
6.5 -0.2
Packing
1234567890
1234567890
XXXXXXXXXXX
IGBT
Type code
130
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131
SC59
SO-20
1.1 0.1
3 0.1
20
11
0.45 0.15
9 x 1.27 = 11.43
0.4
10.3 0.3
0.2
0.1 M
2.8 +0.2
-0.1
Seating Plane
20x
+0.87
0.95
(0.55)
1
12.8 -0.2
10
+0.1
0.15 -0.0
5
0.1 M
0.95
Index
Marking
+0.1
1.6 +0.15
-0.3
8
1)
0.35+0.15
0.25
Gauge Plane
1.27
0.15 MAX.
0.1
3x0.4 +0.05
-0.1
Low Voltage
2.65 MAX.
0.2 -0.1
STAND OFF
2.45 -0.2
0.35 x 45
7.6 -0.2
Applications
Package Outline
Package Outline
SC59-PO V05
1) Does not include plastic or metal protrusion of 0.15 max. per side
High Voltage
Foot Print
Foot Print
0.8
0.9
9.73
1.3
0.9
1.67
0.65
1.27
1.2
Silicon Carbide
SC59-FPR V05
Marking Layout
Infineon
1234567890
1234567890
XXXXXXXXXXX
Manufacturer
Type code
Pin 1 Marking
Date code (YYWW)

Lot number
Type code
123
Date code (MY)
IGBT
Marking Layout
SC59-MK V01
Packing
Packing
0.3
10.9

Pieces/Tube: 39
0.2
2.7
3.2
Pin 1
3.18
Power ICs
3.28
15.4
13.3
24 0.3
12
6.5 -0.2
1.32
SC59-TP V04
Packages
132
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133
SOT-23
SOT-89
0.2
0.25 M B C
10 MAX.
0.35 0.1
0.45 +0.2
-0.1
3
0.15
1.5
0...8
1.9
2.5 0.1
1)
1.6 0.2
Low Voltage
+0.2
acc. to
DIN 6784
1 0.2
0.08...0.1
1)
4 0.25
0.15 MIN.
C
0.95
1.5 0.1
0.2 MAX.
1 0.1
0.25 0.05
1.3 0.1
4.5 0.1
45
0.1 MAX.
10 MAX.
1)
0.4 +0.1
-0.05
+0.2
acc. to
DIN 6784
2.4 0.15
1 0.1
10 MAX.
2.9 0.1
Applications
Package Outline
2.75 +0.1
-0.15
Package Outline
0.15
B x3
0.2 B
1) Ejector pin markings possible
1) Lead width can be 0.6 max. in dambar area
Foot Print
Foot Print
High Voltage
2.0
1.2
0.9
0.8
1.0
1.3
2.5
0.9
0.8
1.2
Marking Layout
Silicon Carbide
0.8
0.8
0.7
Marking Layout
Manufacturer
12 S
Type code
Pin 1
Date code (MY)

Manufacturer
Pin 1
IGBT
Type code
123
Date code (MY)
Packing
Packing


0.2
0.2
Pin 1
3.15
12
4.6
2.65
2.13
0.9
Power ICs
1.15
Pin 1
1.6
Packages
4.3
134
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135
SOT-323
Package Outline
Package Outline
1.60.1
4.6
0.25 M A
3x
0.1
0.1
1.25 0.1
2.1 0.1
3.5 0.2
7 0.3
2.3
0.7 0.1
0.1 MAX.
0.5 MIN.
0.3 +0.1
-0.05
15 MAX.
0.9 0.1
2 0.2
0.15 +0.1
-0.05
0.65 0.65
0.28 0.04
Low Voltage
0.1 MAX.
3 0.1
0.1 MIN.
6.5 0.2
Applications
SOT-223
0...10
0.2
0.25 M B
Foot Print
Foot Print
High Voltage
3.5
1.4
0.8
4.8
1.6
1.4
0.6
Silicon Carbide
0.65
1.2 1.1
Marking Layout
Marking Layout
S
12
123456
12 S
Type code
Pin 1
Date code (MY)
Type code
Pin 1
Packing
Packing


0.3 MAX.
0.2
8
2.3
12
7.55
Pin 1
Pin 1
6.8
IGBT
Manufacturer
Manufacturer
Date code (YYWW)
Power ICs

2.15
1.1
1.75
Packages
136
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137
TSOP-6
SOT-363
Package Outline
0.15 +0.1
-0.05
0.65 0.65
0.2
0.35 +0.1
-0.05
0.95
0.2
B 6x
0.2
1.9
Foot Print
0.15 +0.1
-0.06
M
Low Voltage
1.6 0.1
10 MAX.
0.1 MAX.
(0.35)
0.1
1.25 0.1
0.1 MAX.
0.1 MIN.
0.1
1.1 MAX.
2.5 0.1
6x
2.1 0.1
Pin 1
marking
2.9 0.2
(2.25)
0.9 0.1
+0.1
0.2 -0.05
0.25 0.1 10 MAX.
2 0.2
Applications
Package Outline
1.9
1.6
2.9
0.5
0.3
0.9 0.7
High Voltage
Foot Print
0.95
0.65
Marking Layout
Silicon Carbide
Remark: Wave soldering possible dep.

on customers process conditions
0.65
Marking Layout
Manufacturer
Pin 1 marking
Manufacturer
Date code (MY)
Pin 1 Marking
12
Type code
Type code
Packing
Packing


0.2
0.2
2.15
2.7
8
2.3
8
Pin 1
marking
Date code (MY)
IGBT
Power ICs
12
1.1
Pin 1
marking
1.15
Packages
3.15
138
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139
S3O8
S3O8 fused leads
10.1
0.2 0.1
10.1
0.65
0.34 0.1
A B
0.405 0.105
3.3 0.1
0.55 0.15
2.11 0.1
0.43 0.13
2.29 0.1
3.3 0.1
Low Voltage
0.60 0.1
0.25
0.725 0.135
2.3 0.15
0.465 0.135
1.705 0.105
3.3 0.1
3.3 0.1
0.32 0.12
Applications
Package Outline
0.2 0.1
Package Outline
1.64 0.1
0.65
0.34 0.1
0.25 M A B
Foot Print
2.29
2.29
1.0
3.9
0.80
0.34
2.51
0.8
3.8
0.65
0.34
2.36
High Voltage
Foot Print
0.50
0.31
Marking Layout
0.31
Silicon Carbide
1.64
Marking Layout
1234567
Type code

Date code (YWW)
AA
Manufacturer
Pin 1 Marking
1234567
Type code
AA
(YWW)
Manufacturer
Pin 1 Marking
Production lot code
Production lot code
Packing
IGBT

Packing
3.6
0.3
3.6
12
3.6
Index
Marking
0.3
Index
Marking
1.2
1.2
Packages
3.6
12
Power ICs
140
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141
PowerStage 3x3
SuperSO8
4.2
0.25 0.1
+0.2
0.25 M A B
Foot Print
High Voltage
4.7
0.7
0.64
0.63
0.62
4.46
0.65
6.85
Marking Layout

1234567
Type code
AA

(YWW)
Manufacturer
Pin 1 Marking
12345678
Date code (YWW)
AA
Pin 1 Marking
Production lot code
Mold chassis
Identification code
Manufacturer
Production lot code
Packing
Type code
IGBT
Marking Layout
Silicon Carbide
0.35 0.1
0.7
0.5
0.33 0.1
0.95 0.1
0.49 0.1
0.65 0.1
2.45 0.1
3.0 0.1
3.0 0.1
5
1.2
0.32 0.1
0.65
0.05 - 0.05
0.2 0.1
0.8 0.1
Foot Print
Low Voltage
3.6 0.2
101.5
0.32 0.1
3 x 1.27
0.44 0.1
0.55 0.1
6.15 0.2
0.65 0.1
0.33 0.1
0.95 0.1
0.35 0.1
5.9 0.2
2.45 0.1
0.49 0.1
3.0 0.1
0.12 0.1
3.0 0.1
1 0.1
5.15 0.2
0.05 - 0.05
0.2 0.1
0.65
Applications
Package Outline
0.8 0.1
Package Outline
Packing
Index
Marking
3.6
5.4
0.3
12
3.6
0.3
1.7
1.2
1.3
Packages
1.3
6.6
5.8
12 0.3
Power ICs
142
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143
VSON
SuperSO8 dual
0.2 0.1
0.06
1.27
B
0.05
0.44 0.1
PG-VSON-4-1-PO V01
3.6 0.2
5.9 0.2
1 0.01
0.6 0.1
0.25
Low Voltage
0.12 0.1
8
2.75 0.1
0.5 0.1
8 0.1
4.75 0.1
0.02
4.3 0.1
B
0.25 0.1
101.5
0.4 0.1
7.2 0.1
0.55 0.1
1 0.1
8 0.1
0.55 0.1
10.1
5.15 0.2
6.15 0.2
0...0.05
Applications
Package Outline
Package Outline
A B
Foot Print
Foot Print
0.7
0.63
4.7
0.65
Silicon Carbide
6.85
0.7
1
3
0.635
4.46
0.5
0.62
4.75
4.2 1.43
1.2
High Voltage
7.2
PG-VSON-4-1-FP V01
Marking Layout
12345678
Manufacturer
12345678
Type code
XX
Pin 1 Marking

(YWW)
AA
Date code (YWW)
Pin 1 Marking

Production lot code
Production lot code
Type code
Mold chassis
Identification code
IGBT
Marking Layout
Manufacturer
Packing
Packing

0.3 0.05
1.4
1.3
1.3
8.35
Power ICs
5.4
Index
Marking
16
8.35
0.3
5.8
12 0.3
12
1.7
6.6
Packages
144
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145
CanPAK SJ
CanPAK SQ
Package Outline
3.83 0.13
0.8 0.02
4.8 0.08
0.8 0.02
0.13 0.05
0.65 0.05
0.13 0.05
Foot Print
Marking Layout
High Voltage
0.68
0.45
0.7
0.7
1.2
0.8
5.6
0.95
1.25
0.4
Copper
Solder mask
1.2
Silicon Carbide
1.25
1.08
0.55
0.55
0.9
Solder mask
1.03
5.8
Copper
Stencil apertures
0.4
0.93
0.9
0.99
0.65
0.5
1.25
0.75
0.9
1.25
0.99
5.8
0.65
1.2
2.9
0.75
0.65
0.9
0.55
0.75
1.13
1.13
0.7
5.6
1.2
2.9
0.85
2.9
0.65
0.7
2.9
0.58
1.2
Foot Print
Low Voltage
0.65 0.05
0.05 0.05
0.4 0.05
0.7 0.02
2.8 0.05
0.9 0.02
0.25 0.02
0.4 0.05
4.8 0.08
0.05 0.05
0.5 0.02
2.45 0.1
0.6 0.02
1.35 0.1
0.6 0.02
2.8 0.05
0.9 0.02
2.65 0.05
1.35 0.05
3.83 0.13
Applications
Package Outline
Stencil apertures
0.5
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234

IGBT

Gate Marking
Packing
Packing

0.3
0.75
Gate
Marking
0.9
0.75
0.9
Packages
4.1
Power ICs
4.1
5.1
12
3.7
5.1
12
Gate
Marking
0.3
3.7
146
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147
CanPAK ST
CanPAK MN
Package Outline
4.93 0.13
3.9 0.05
0.9 0.02
0.55 0.02
0.5 0.02
0.13 0.05
0.65 0.05
0.9 0.02
0.13 0.05
Foot Print
High Voltage
0.7
3.2
1.1
3.2
0.75
1.45
0.675
2x 0.8
Copper
Solder mask
Stencil apertures
0.675
Silicon Carbide
Stencil apertures
Marking Layout
0.85
0.9
0.95
0.7
4x 0.7
0.85
4x 1.8
1.175
1.125
0.7
Solder mask
0.5
1.2
1.2
0.9
Copper
0.5
1.2
1.85
3.2
0.695
0.75
3.2
0.7
0.4
1.11
0.7
0.5
0.33
1.2
0.6
1.25
1.175
0.55
0.7
1.09
1.85
5.6
0.66
0.82
0.97
0.9
5.8
0.6
0.23
1.25
0.85
0.65
2.9
0.6
0.91
0.9
2.9
0.65
2x 1.3
Foot Print
Low Voltage
0.65 0.05
6.3 0.05
1.4 0.02
0.28 0.02
0.05 0.05
0.4 0.05
0.8 0.02
1.63 0.1
3.23 0.1
4.8 0.08
0.05 0.05
0.4 0.05
0.6 0.02
2.8 0.05
0.6 0.02
0.77 0.02
2.63 0.1
3.83 0.13
1.33 0.1
Applications
Package Outline
0.95
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234

IGBT

Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Packing
0.3
0.3
Gate
Marking
4.1
5.1
5.1
12
3.7
0.75
Gate
Marking
0.9
0.95
1.2
Packages
5.2
Power ICs
6.6
12
Packing
148
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149
CanPAK MX
CanPAK MP
0.4 0.02
0.65 0.05
0.55 0.02
0.65 0.05
0.82 0.02
0.13 0.05
Low Voltage
0.28 0.02
6.3 0.05
0.05 0.05
0.4 0.05
0.7 0.02
0.7 0.02
1.4 0.02
6.3 0.05
0.4 0.05
3.9 0.05
1.35 0.1
0.05 0.05
0.6 0.02
2.06 0.1
2.75 0.1
4.93 0.13
3.9 0.05
0.6 0.02
0.77 0.02
3.36 0.1
4.93 0.13
Applications
Package Outline
Package Outline
0.13 0.05
Foot Print
High Voltage
0.75
0.65
0.7
1.35
Copper
Solder mask
0.47
Silicon Carbide
0.35
Stencil apertures
0.75
1.88
1.45
0.75
0.7
0.87
7.1
0.65
0.65
1.73
0.9
0.87
Solder mask
1.8
1.08
0.75
0.9
7.3
Copper
4.2
0.6
1.8
0.55
0.76
0.73
0.23
0.5
0.33
1.9
0.5
0.7
1.75
0.9
0.6
0.6
4.2
0.5
1.85
0.75
1.78
7.1
0.66
0.55
0.83
7.3
1.85
1.8
0.7
0.65
0.9
4.15
0.55
1.8
1.63
4.2
0.5
1.85
0.65
1.85
0.93
Foot Print
Stencil apertures
Marking Layout
Marking Layout
Gate Marking
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234

IGBT

Gate Marking
Packing
Gate
Marking
0.95
1.2
0.95
1.2
Packages
5.2
Power ICs
5.2
0.3
6.6
12
5.1
Gate
Marking
0.3
5.1
6.6
12
Packing
150
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151
CanPAK MZ
TDSON-10
Package Outline
Applications
Package Outline
0.42
0.23
0.5
Low Voltage
0.65
PG-TDSON-10-2-PO V01
0.13 0.05
0.25
Copper
Solder mask
Stencil apertures
Wettable surface
0.6
High Voltage
0.7
1.65
0.5
0.6
0.5
2.5
2x 0.9
0.9
3.2
0.325
0.475
2.9
1.45
0.7
0.65
3.2
1.2
0.75
0.9
0.475
3.5
2.8
1.6
1
1.2
0.475
2x 0.6
3.5
0.25
0.65
4x 1.8
1.175
Stencil apertures
Silicon Carbide
1.2
1.2
3.2
0.7
0.35
1.6
4x 0.7
1.85
3.2
0.325
0.475
0.7
Index Marking
Foot Print
0.75
1.85
0.2
0.5
3 0.1
6.3 0.05
0.4 0.05
0.30 0.02
1.175
4 x 0.5 = 2
1.6 0.1
0.7 0.02
0.05 MAX.
Index Marking
2.3
0.35 0.1
0.05 0.05
0.65 0.02
Foot Print
0.9 0.05
3 0.1
3.9 0.05
0.7 0.02
0.95 0.02
3.0 0.1
4.93 0.13
PG-TDSON-10-2-FP V01
0.7
Marking Layout
Marking Layout
Gate Marking
Pin 1 marking
1234
XXXX
Type code
Lot code
IGBT

Manufacturer
Type code
Lot code
Date code (YYWW)
1234
1234
Packing
Packing
5.2
Drawing available on request
6.6
12
5.1
Gate
Marking
0.3
Power ICs
0.95
1.2
Packages
152
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153
DIP-7
DIP-8
0.46 0.1
0.35 8x
8.9 1
4
1
9.52 0.25 1)
4.37 MAX.
0.38 MIN.
2.54
0.25 +0.1
6.35 0.25 1)
7.87 0.38
0.25 +0.1
6.35 0.25 1)
Low Voltage
0.35 7x
1.7 MAX.
3.25 MIN.
2.54
0.46 0.1
7.87 0.38
3.25 MIN.
0.38 MIN.
1.7 MAX.
Applications
Package Outline
4.37 MAX.
Package Outline
8.9 1
1
4
9.52 0.25 1)
Index Marking
Marking Layout
High Voltage
Index Marking
Marking Layout
Date code (YYWW)
Manufacturer
LMC
XXXXXXXXXXX
12345678901
Type code
Manufacturer
LMC
XXXXXXXXXXX
Lot code

Mold compound code

Lot code
Pieces/Tube: 20
Pieces/Tube: 20
12.2 0.5
Packing
IGBT

Packing
9 0.5
Type code
9 0.5
15 0.3
Power ICs
15 0.3
12.2 0.5
12345678901
Silicon Carbide
Date code (YYWW)
Packages
154
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155
DIP-14
DIP-20
Package Outline
14
1.5 MAX.
0.5 +0.1
2.54
Applications
0.25 +0.1
9.9 MAX.
0.25 20x
11
20
0.87
4.2 MAX.
0.51 MIN.
8.9 1
19.05 0.25 1)
7.62 0.1
7.3 0.1
Low Voltage
0.35 14x
6.35 0.25 1)
0.25 +0.1
3.175 MIN.
1.7 MAX.
2.54
0.46 0.1
7.87 0.38
3.35 0.15
0.38 MIN.
4.37 MAX.
Package Outline
24.6 0.1
10 0.1 MAX.
Index Marking
Marking Layout
Pieces/Tube: 20
Pieces/Tube: 20
9 0.5
9 0.5
15 0.3
Silicon Carbide
Date code (YYWW)

Lot number
IGBT
Packing
12.2 0.5
Packing
123456789012345678
MC XXXXXXXXXXX
12.2 0.5
Date code (YYWW)

Lot number
1234567890 MC
XXXXXXXXXXX
Manufacturer
Type code
Mold compound code
Marking Layout
Mold compound code
Manufacturer
Type code
High Voltage
Index Marking
Power ICs
15 0.3
Packages
156
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157
TSSOP-48
DSO-36
11 0.15 1)
6.3
5 3
0.25
2.8
Heatslug
0.1 C 36x
0.95 0.15
+0.13
0.25
ABC
14.2 0.3
17 x 0.65 = 11.05
0.25 B
36
19
5.9 0.1
Bottom View
19
3.2 0.1
36
B
+0.07
-0.02
3.5 MAX.
2)
15.74 0.1
(Heatslug)
0.25
25
3.25 0.1
0 +0.1
8 MAX.
0.65
8.1(BSC)
0.2 48x
48
-0.04
0.6 +0.15
-0.1
0.1
2)
0.2 +0.07
-0.03
1.1 0.1
1.3
0.5
0.1
0.13 +0.03
+0.05
-0.2
1.0
1.10 MAX.
0.15 -0.1
6.1
Applications
Package Outline
Package Outline
1 x 45
18
18
15.9 0.1 1)
1
Index Marking
12.5 0.1
Heatslug
2) Stand off
Does not include plastic or metal protrusion of 0.15 max. per side
2)
Does not include dambar protrusion of 0.05 max. per side
1)
24
1)
13.7 -0.2
Low Voltage
Index Marking
PG-DSO-36-10, -12, -15, -16, -21, -23, -26, -27 V01
Foot Print
High Voltage
0.45
1.83
Foot Print
0.29
13.48
1.3
0.65
7.1
Silicon Carbide
17 x 0.65 = 11.05
HLG09551
Pin 1 Marking
123456789012
123456789012
XXXXXXXXXXX
Infineon
Manufacturer
1234567890

H = RoHS compliant + halogen free

XXXXX
Manufacturer
Type code
Pin 1 Marking
Type code
Lot number
IGBT
Lot number
XXXXXX
Marking Layout
Marking Layout
Packing
0.3
20
Power ICs
16.4
7 0.1
Pin 1
24 0.3
Packing
18 0.1
3.4
14.7
4
CPSG5808
Packages
158
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159
IQFN-40
TSSOP-28
0.8 0.05
0...0.05
30
31
40
11
10
2 0.1
0.2 0.1
Low Voltage
1.5 0.1
20
0.21 0.1
0.1 A
6 0.1
21
0.4 0.1
4.4 0.1
0.5
0.73 0.1
6 0.1
Applications
Package Outline
2.4 0.1
Package Outline
Index Marking
2 0.1
0.23 0.05
PG-IQFN-40-1-PO V01
Foot Print
Foot Print
High Voltage
0.7
4.4
1.5
2.4
0.25
A
HLG05506
0.4
Silicon Carbide
PG-IQFN-40-1-FP V01
Marking Layout
Marking Layout
Type code
Manufacturer
Manufacturer
Type code
XX
(YYWW)
Pin 1 Marking

123456789
123456789012
123456789012

H = RoHS compliant/ halogen free
XXXXXXXXXXX
IGBT
12345678
Pin 1 Marking
Production lot code
Production lot code
Packing
Pin 1
1.2
PG-IQFN-40-1-TP V01
6.8
16 0.3
10.2
12
6.3
6.3
0.3
0.3
12
Power ICs
Packing
1.2
1.6
CPSG5872
Packages
160
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161
DSO-28
VQFN-68
Package Outline
Applications
Package Outline
0.9 MAX.
A
A B C
M
8.10.1
Low Voltage
Index Marking
68x
0.1
SEATING PLANE
9.75
10
68x
0.05
Index Marking
8.10.1
(0.2)
0.05 MAX.
STANDOFF
Foot Print
High Voltage
Foot Print
4.30.1
0.6 +0.15
-0.1
3.55 0.1
9.75
(0.65)
0.5
10
Marking Layout
Silicon Carbide
HLG05506
Marking Layout
Manufacturer
Type code
Pin 1 Marking
XXXXXXXXXXX
Lot number
12345678901
12345678901
12345678901
XXXXXXXXXXX

Pin 1 marking
Lot code
Packing
Type code
IGBT
Infineon
123456789001234
123456789001234
Manufacturer

H = RoHS compliant / halogen free
Packing
0.3
Index Marking
10.35
1.05
2.6
10.9
Power ICs
15.4
24
10.35
6.5 -0.2
16
24 0.3
18.3
12
Packages
162
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163
Packaging Information
Tape and Reel
Tape and Reel made of Plastic

Reel 180mm and 330mm
Carrier tape width: 8, 12mm
Removable transparency foil
Direction of unreeling
1.5 +0.1
4 0.1
Trailer (empty)
Leader (empty)
(1 x Circumference / Hub)
min. 160mm
(1 x Circumference / Reel)
min. 400mm
Low Voltage
(DIN IEC 60 286-3)

Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries
relating to additional dimensions, dimensional tolerances or variations.
Applications
Direction of Unreeling
330
There shall be a leader of 400mm minimum of cover tape, which includes at least 100mm of carrier tape with empty
12
11
10
Direction of unreeling
compartments. All the leader may consist of the carrier tape with empty compartments, sealed by cover tape.
9
8
7
6
5
4
180
3
Sd
Upper side
2
1
Removable transparency foil
Labels and Boxes
Sd
Infi
neo
Optional:
additional customer label
n
Infi
High Voltage
93
07
For 1 Tape (resembling a pizza box)

neo
Silicon Carbide
Barcode label
(readable in this position and removable)
Inf
on
O
V RIG
E
PA R IN
C PA AL
K C
IN K
G T
Fixing on the Tape
ine
Infineon packing label
Carrier tape width: 12mm
30 10
IGBT
Up to 10 Tapes
13 0.2
ine
on
O
V RIG
E
PA R IN
C PA AL
K C
IN K
G T
Inf
Infi
ne
on
Infi
ne
on
Power ICs
Infineon packing label
on
Packages
Barcode label
164
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165
Packaging Information
Applications
Tube (DIN IEC60 286-4)

(DIN IEC60 286-4)
Please consult your nearest Infineon sales offices (www.infineon.com/sales) if you have any queries
relating to additional dimensions, dimensional tolerances or variations.
Tube and Packing

Low Voltage
Standard Length: 528-2mm;

coated (unless stated to the contrary)
Being the Leader in Energy Efficiency Technologies, Infineons products are enormously
important for future energy supplies in terms of both exploiting renewables and using
energy efficiently. Explore our wide offer of high-end products for your application:
App
rox.
130
IGBT
85
Infineons RC-Drives Fast IGBTs drive high-frequency inverter for comfortable quietness
Smooth switching performance leading to low EMI levels
Optimized Eon, Eoff and Qrr for low switching losses
Best fit for applications in domestic and industrial drives like compressors,
pumps and fans
Power ICs
pro
x.
56
Infineons OptiMOS 60-150V in CanPAK

You CanPAK more performance in your design
Top-side cooling - best thermal behavior
Highest efficiency and power density
Best fit for applications like DC-DC converters for telecom,
voltage regulation, solar micro inverters and synchronous rectification
Ap
x.
pro
Ap m a x .
Silicon Carbide
Infineons 650 V CoolMOS CFD2

market leading technology with integrated fast body diode
Worlds lowest area specific on-state resistance (Ron * A)
Softer commutation behavior and therefore better EMI behavior
Best fit for applications like telecom, server, battery charging, solar,
HID lamp ballast, LED lighting
High Voltage
We are the Leader in

Energy Efficiency Technologies
Packages
Infineons SiC Schottky Diodes thinQ! high efficiency in a 1200 V compliant TO-package
TO-247HC offers a high creepage distance for 1200V operating voltages
System efficiency improvement over Si diodes
Best fit for applications like solar, UPS, SMPS and motor drives
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Catalog Support
We update the Selection Guide on a regular basis on the internet to

provide you with the latest information. Please have a look and find
out about the newest products or package updates.
www.Infineon.com/PSDSelectionGuide
If you have feedback or any comment please go to:
www.Infineon.com/PSDSelectionGuide
Download electronical version:
www.Infineon.com/ePSDSelectionGuide
You can order this catalog via phone: 00 800 951 951 951 (toll-free)
Product Support
You can use our simulation and design tools for a first review and more information.
PowerEsim - design and simulation tool for high voltage MOSFETs
PowerEsim is a CAD tool for designing switching power supplies. Design service is readily available
anytime, anywhere. It is so easy to use through a generic Web browser that you dont need any training.
www.Infineon.com/PowerEsim
SimT - Design and simulation tool for low voltage MOSFETs
SimT provides detailed low voltage MOSFETs information for your specific application
and operating conditions. Just enter the required operating conditions and the webbased application delivers quickly corresponding device.
Simply by inserting your converter requirements, SimT provides different solutions for your buck
converter, optimized either in efficiency or cost, to fulfil your needs in each individual case.
Furthermore, SimT offers a complete analysis of your solution, including an online simulation based on
Simetrix/Simplix. (www.Infineon.com/SimT)
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Ask Infineon Infineon Hotline-Service at your fingertips.

Where you need it. When you need it.
Infineon offers its toll-free 0800 service hotline as one central number,
available 24/7 in English and German.
Our global connection service goes way beyond standard operating and
switchboard services by offering qualified support on the phone. Call us!
Germany .......................... 0800 951 951 951
USA ................................. 1866 951 9519
International .................... 00 800 951 951 951
Direct access ................... +49 89 234-0 (interconnection fee)
Where to Buy
Infineon Distribution Partners and Sales Offices
Please use our location finder to get in contact with your nearest
Infineon distributor or sales office.
www.infineon.com/WhereToBuy
Infineon Technologies innovative semiconductor solutions for Energy Efficiency, mobility and security.
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
2011 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9571-G1-X-7600

Date: 06/2011
ATTENTION PLEASE!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(Beschaffenheitsgarantie). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property
rights of any third party.
INFORMATION
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
WARNINGS
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office. Infineon Technologies Components may only be
used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause
the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.

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Power Management

Selection Guide 2011

We create Power Management We live Energy Efficiency

Our innovative Energy Efficiency technologies are a vital contribution to a

Infineons products stand out for their reliability, their quality

Explore our wide offer of high-end products for your applications.

Infineons semiconductor solutions

Highly efficient solutions for consumer and computing

Best choice for renewable energy applications

Full range of solutions for e-cars and e-bikes

Server Power Supply

Telecom Power Supply

Segment Low Voltage

Segment High Voltage

Segment Silicon Carbide

Segment Power ICS

We create Power Management We live Energy Efficiency

Server, Desktop and Graphic Cards

Best Solutions for Small and Cool System Power

Highest Power Density for the Next Generation Voltage Regulation

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Server, Desktop and Graphic Card

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Cost-effective Products for Consumer SMPS

Leading-edge Technologies for Notebook Adapters

2 Switch-Forward DC-DC (TTF)

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Active Clamp Forward

2 Switch-Forward DC-DC (TTF)

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Highest Efficiency with new Topologies for PC Silverbox

Telecom Power Supply

Technologies for best Efficiency in Servers

Energy Efficiency for Telecom Power Supply

Server Power Supply

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Server Power Supply

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Best Solutions for Battery Charger

Best Solution for Battery Management

AC/DC Battery Charger

Battery Block Slave

Battery Block Slave

Ecar (Battery charger)

Ecar (Battery management)

ZVS Phase Shifted Full Bridge

Battery Block Slave

Battery Block Slave

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high power high current

step up step down

Improving efficiency is the number one objective in the field of photovoltaics:

Recommended IFX parts

Recommended IFX parts

* Source: EPIA Global Market Outlook for Photovoltaics Until 2015

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Our IGBTs for Welding - the power is in your hands

Highest Performance, Efficiency and Reliability IGBTs

Two transistor forward

Industrial Welding (MMA < 280A)