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I NA
103
I NA
103
APPLICATIONS
DIFFERENTIAL RECEIVERS
AMPLIFICATION OF SIGNALS FROM:
Strain Gages (Weigh Scale Applications)
Thermocouples
Bridge Transducers
DESCRIPTION
The INA103 is a very low noise, low distortion monolithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response. It is ideal for low-level audio
signals such as balanced low-impedance microphones.
The INA103 provides near-theoretical limit noise performance for 200 source impedances. Many industrial applications also benefit from its low noise and
wide bandwidth.
Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. Its
balanced input, low noise and low distortion provide
superior performance compared to transformer-coupled
microphone amplifiers used in professional audio
equipment.
The INA103s wide supply voltage (9 to 25V) and
high output current drive allow its use in high-level
audio stages as well. A copper lead frame in the plastic
DIP assures excellent thermal performance.
Gain Drive
12
Input 16
Gain Sense 15
Offset Offset
Null
Null
3
6k
+
A1
3k
6k
11 Sense
RG 13
60.6
G = 100 14
+RG
+Gain Sense
+Input
3k
6k
A3
10
Output
Ref
6k
A2
+
+Gain Drive
V+
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Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
SBOS003
PDS-1016H
1
INA103
SPECIFICATIONS
All specifications at TA = +25C, VS = 15V and RL = 2k, unless otherwise noted.
INA103KP, KU
PARAMETER
CONDITIONS
GAIN
Range of Gain
Gain Equation (1)
Gain Error, DC G = 1
G = 100
Equation
Gain Temp. Co. G = 1
G = 100
Equation
Nonlinearity, DC G = 1
G = 100
OUTPUT
Voltage, RL = 600
RL = 600
Current
Short Circuit Current
Capacitive Load Stability
INPUT OFFSET VOLTAGE
Initial Offset RTI (3)
(KU Grade)
vs Temp G = 1 to 1000
G = 1000
vs Supply
INPUT BIAS CURRENT
Initial Bias Current
vs Temp
Initial Offset Current
vs Temp
MIN
1
G = 1 + 6k/RG
0.005
0.07
0.05
10
25
25
0.0003
0.0006
10V Output
10V Output
10V Output
11.5
20
40
TA = TMIN to TMAX
VS = 25, TA = 25C
TA = TMIN to TMAX
INPUT NOISE
Voltage (5)
10Hz
100Hz
1kHz
Current, 1kHz
MAX
UNITS
1000
V/V
V/V
%
%
%
ppm/C
ppm/C
ppm/C
% of FS(2)
% of FS
0.05
0.25
0.01
0.01
12
21
V
V
mA
mA
nF
70
10
(30 + 1200/G)
(250+ 5000/G)
TA = TMIN to TMAX
TA = TMIN to T MAX
9V to 25V
1 + 20/G
TA = TMIN to TMAX
TA = TMIN to TMAX
INPUT IMPEDANCE
Differential Mode
Common-Mode
INPUT VOLTAGE RANGE
Common-Mode Range (4)
CMR
G=1
G = 100
TYP
0.2 + 8/G
4 + 60/G
2.5
15
0.04
0.5
12
1
V
V
V/C
V/C
V/V
A
nA/C
A
nA/C
60 || 2
60 || 5
M || pF
M || pF
11
12
72
100
86
125
dB
dB
2
1.2
1
2
nV/Hz
nV/Hz
nV/Hz
pA/Hz
1kHz
20Hz-20kHz
65
100
nV/Hz
dBu
Small Signal
Small Signal
G=1
6
800
MHz
kHz
240
15
0.0009
kHz
V/s
%
VO = 20V Step
1.7
1.5
s
s
VO = 20V Step
2
3.5
1
s
s
s
DC to 60Hz
DC to 60Hz
RS = 0
OUTPUT NOISE
Voltage
A Weighted, 20Hz-20kHz
DYNAMIC RESPONSE
3dB Bandwidth: G = 1
G = 100
Full Power Bandwidth
VOUT = 10V, RL = 600
Slew Rate
THD + Noise
Settling Time 0.1%
G=1
G = 100
Settling Time 0.01%
G=1
G = 100
Overload Recovery (6)
G = 1 to 500
G = 100, f = 1kHz
50% Overdrive
NOTES: (1) Gains other than 1 and 100 can be set by adding an external resistor, RG between pins 2 and 15. Gain accuracy is a function of RG. (2) FS = Full Scale.
(3) Adjustable to zero. (4) VO = 0V, see Typical Curves for VCM vs VO. (5) VNOISE RTI = V2N INPUT + (VN OUTPUT/Gain)2 + 4KTRG. See Typical Curves. (6) Time required
for output to return from saturation to linear operation following the removal of an input overdrive voltage.
INA103
SPECIFICATIONS
(CONT)
CONDITIONS
MIN
POWER SUPPLY
Rated Voltage
Voltage Range
Quiescent Current
TYP
15
9
TEMPERATURE RANGE
Specification
Operation
Storage
Thermal Resistance, JA
0
40
40
Top View
(1)
16
Input
15
Gain Sense
+ Offset Null
14
G = 100
Offset Null
13
RG
+ Gain Drive
12
Gain Drive
+RG
11
Sense
Ref
10
Output
V+
+ Gain Sense
25
12.5
V
V
mA
+70
+85
+100
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
INA103KP
INA103KU
Plastic DIP
SOL-16
180
211
C
C
C
C/W
ELECTROSTATIC
DISCHARGE SENSITIVITY
DIP or SOIC
1
UNITS
100
PIN CONFIGURATION
+ Input
MAX
TEMPERATURE
RANGE
0C to +70C
0C to +70C
NOTE: (1) Stresses above these ratings may cause permanent damage.
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA103
20
20
Output Voltage (V)
15
10
15
10
5
5
10
15
20
25
10
20
25
22
16
16.5
V S = 25V
15
11
V S = 15V
5.5
12
5.5
11
16.5
22
200
400
600
800
1k
Load Resistance ( )
20
2.55
10
10
2.50
2.45
2.40
2.35
2.30
2.25
20
0
Time (min)
15
20
INA103
10
25
1
55
50
100
Time (s)
125
Temperature (C)
Time (s)
Time (s)
10
0
1
Time (s)
10
100
1000
Gain
INA103
10
70
60
40
G = 100
30
Gain (dB)
G = 1000
50
20
G = 10
10
0
10
G=1
20
30
40
50
1
10
100
1000
10
100
1k
10k
Gain
10M
CMR vs FREQUENCY
100
1M
140
1k
G=1
G = 10
10
G = 500 G = 1000
G = 100
120
G=
100
100
G=
80
G=
60
G=
40
G=
500
100
10
20
0
1
10
100
1k
10k
10
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
THD + N vs FREQUENCY
1M
140
120
G = 100
G = 10
100
G=1
VOUT = +18dBu
0.1
THD + N (%)
100k
Frequency (Hz)
G = 1000
0.010
G=1
0.001
G = 100
G = 10
0.0001
G = 1000
80
60
40
20
0
10
100
1k
10k 20k
Frequency (Hz)
100
1k
Frequency (Hz)
INA103
10
10k
100k
1M
THD + N vs LEVEL
1
G = 100, 1000
f = 1kHz
120
G = 10
100
0.1
G=1
THD + N (%)
140
80
60
0.010
40
G=1
20
0.001
0
0.0005
1
10
100
1k
10k
100k
1M
60
45
30
Frequency (Hz)
15
5
G=1
V OUT = 20Vp-p
f = 1kHz
0.01
THD + N (%)
THD + N vs LOAD
0.1
0.001
G = 1000
0.1
G = 100
0.010
G=1
G = 10
0.001
0.0001
0.0001
200
400
600
800
60
1k
50
40
RLOAD ( )
30
20
10
10
20
10
20
1
SMPTE IMD (%)
15
0.1
G = 1000
0.010
G = 1000
0.1
G = 100
G=1
0.010
G = 100
0.001
G = 10
G=1
2k
G = 10
0.001
0.0005
0.0001
10k
20k
60
Frequency (Hz)
50
40
30
20
10
INA103
0.1
G = 1000
0.010
G = 100
G=1
G = 10
0.001
0.0005
10
1
2k
10k
20k
10
100
1k
10k
Frequency (Hz)
Frequency (Hz)
APPLICATIONS INFORMATION
useful if various input sources are connected to the INA103.
Although not shown in other figures, this network can be
used, if needed, with all applications shown.
GAIN SELECTION
Gains of 1 or 100V/V can be set without external resistors.
For G = 1V/V (unity gain) leave pin 14 open (no connection)see Figure 4. For G = 100V/V, connect pin 14 to pin
6see Figure 5.
Gain can also be accurately set with a single external resistor
as shown in Figure 1. The two internal feedback resistors are
laser-trimmed to 3k within approximately 0.1%. The
temperature coefficient of these resistors is approximately
50ppm/C. Gain using an external RG resistor is
6k
G=1+
RG
INPUT CONSIDERATIONS
Certain source impedances can cause the INA103 to oscillate. This depends on circuit layout and source or cable
characteristics connected to the input. An input network
consisting of a small inductor and resistor (Figure 2) can
greatly reduce the tendancy to oscillate. This is especially
INA103
V+
1F Tantalum
+
50
9
16
16
1.2H
15
V IN RG
+
13
11
INA103
14
VO = G VIN
10
11
INA103
7
6
RL
VOUT
2
1.2H
1
8
V
NOTES: (1) No RG required for G = 1.
See gain-set connections in Figure 4.
(2) RG for G = 100 is internal. See
gain-set connection in Figure 5.
GAIN
GAIN (dB)
RG ()
1
3.16
10
31.6
100
316
1000
0
10
20
30
40
50
60
Note 1
2774
667
196
60.6(2)
19
6
50
NOISE PERFORMANCE
The INA103 provides very low noise with low source
impedance. Its 1nV/Hz voltage noise delivers near theoretical noise performance with a source impedance of 200.
Relatively high input stage current is used to achieve this
low noise. This results in relatively high input bias current
and input current noise. As a result, the INA103 may not
provide best noise performance with source impedances
greater than 10k. For source impedance greater than 10k,
consider the INA114 (excellent for precise DC applications), or the INA111 FET-input IA for high speed applications.
10k
16
6k
G = 1 +
RG
15
13
V IN RG
OFFSET ADJUSTMENT
Offset voltage of the INA103 has two components: input
stage offset voltage is produced by A1 and A2; and, output
stage offset is produced by A3. Both input and output stage
offset are laser trimmed and may not need adjustment in
many applications.
14
11 10
INA103
VOUT
6
2
1
Offset Adjust
Range = 250mV. RTI
INA103
OUTPUT SENSE
An output sense terminal allows greater gain accuracy in
driving the load. By connecting the sense connection at the
load, IR voltage loss to the load is included inside the
feedback loop. Current drive can be increased by connecting a current booster inside the feedback loop as shown in
Figure 11.
IB IB+ 2.5A
16
Gain = 1V/V
(0dB)
15
In
13
11
INA103
VIN 14
IB
VOUT
10
Gain = 100V/V
(40dB)
16
15
11
13
V+
10
INA103
14
7
100A(1)
VOUT
OPA27
IB +
150
10k
+In
(1)
50k
150
Offset Adjustment
Range = 15mV
50k
100A(1)
100k
(1)
Gain = 100V/V
(40dB)
16
In
15
10
INA103
14
6
C
1F
1
(1)
100k
(1)
10k
A2
2k
1/2 OPA1013
10
VOUT
R
100k
2
+In
f3dB =
11
13
INA103
(1)
100k
Gain
12 RC
RF
16
R1
15
16
13
11
INA103
VIN 14
R2
15
10
VOUT
V IN RG
11 10
INA103
14
R3
12
13
VOUT
6
5
2
G = 1+
OUTPUT STAGE
GAIN
R1 and R3
(k)
R2
()
2
5
10
1k
1.2k
1.2k
2.4k
632
273
(R2 || 12k) + R1 + R3
(R2 || 12k)
2RF
RG
RF
RF > 10k can increase noise and reduce bandwidthsee text.
NOTE: AD625 equivalent pinout.
A common problem with many IC op amps and instrumentation amplifiers is shown in (a). Here, the amplifiers input is driven beyond its linear common-mode
range, forcing the output of the amplifier into the supply rails. The output then folds back, i.e., a more positive input voltage now causes the output of the amplifier
to go negative. The INA103 has protection circuitry to prevent fold-back, and as shown in (b), limits cleanly.
Gain = 1V/V
(0dB)
16
V+
10
15
16
15
13
VIN 14
11
INA103
10
13
V IN RG
14
6
20
MJ15011
CMR
Trim
2
1
Introduces
approximately
+0.2% Gain Error.
11
10
INA103
100
VOUT
(To headphone
or speaker)
7
MJ15012
Buffer inside feedback loop
11
INA103
47F/63V
16
+
6.8k
+48V
15
2.2k
20dB
Pad
1
Phantom
Power
240
cm 3
2
6.8k
10
Gain
Adjust
47k
13
1k
11 10
INA103
14
V OUT
7
6
100k
1F
2
47F/63V
1
+
2.2k
20dB
Pad
OPA627
240
Output offset voltage
control loop.
FIGURE 12. Microphone Preamplifier with Provision for Phantom Power Microphones.
16
15
10k
12
13
INA103
14
V IN
10k
11
10
VOUT
7
6
10k
10k
5
2
1
100
+
Shield driver minimizes degradation of CMR due
to distributed capacitance on the input lines.
OPA602
16
OPA627
15
13
11
V IN
2
1
Gain = 100V/V
(40dB)
OPA627
INA103
10
INA103
14
12
V OUT = 100 V IN
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TIs standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customers applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TIs publication of information regarding any third
partys products or services does not constitute TIs approval, warranty or endorsement thereof.
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