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PD - 91480B

IRF7313
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HEXFET Power MOSFET

Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated

S1
G1
S2
G2

D1

D1

D2

D2

VDSS = 30V
RDS(on) = 0.029

Top View

Description

Fifth Generation HEXFETs from International Rectifier


utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted)


Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current

TA = 25C
TA = 70C

Pulsed Drain Current


Continuous Source Current (Diode Conduction)
TA = 25C
Maximum Power Dissipation
TA = 70C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range

Symbol

Maximum

VDS
V GS

30
20
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
5.8
-55 to + 150

ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG

Units
V

W
mJ
A
mJ
V/ ns
C

Thermal Resistance Ratings


Parameter

Maximum Junction-to-Ambient

Symbol

Limit

Units

RJA

62.5

C/W
9/12/02

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IRF7313
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS/TJ

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage


Forward Transconductance

IDSS

Drain-to-Source Leakage Current

V(BR)DSS

I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss

Gate-to-Source Forward Leakage


Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.
30

1.0

Typ.

0.022
0.023
0.032

14

22
2.6
6.4
8.1
8.9
26
17
650
320
130

Max. Units
Conditions

V
V GS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.029
V GS = 10V, ID = 5.8A

0.046
V GS = 4.5V, ID = 4.7A

V
V DS = V GS, ID = 250A

S
V DS = 15V, ID = 5.8A
1.0
V DS = 24V, VGS = 0V
A
25
V DS = 24V, VGS = 0V, TJ = 55C
100
V GS = 20V
nA
-100
V GS = -20V
33
I D = 5.8A
3.9
nC
V DS = 15V
9.6
V GS = 10V, See Fig. 10
12
V DD = 15V
13
I D = 1.0A
ns
39
R G = 6.0
26
R D = 15

V GS = 0V

pF
V DS = 25V

= 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics


IS
I SM

VSD
trr
Qrr

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge

Min. Typ. Max. Units

2.5

30

0.78
45
58

1.0
68
87

A
V
ns
nC

Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25C, IS = 1.7A, VGS = 0V
TJ = 25C, IF = 1.7A
di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting TJ = 25C, L = 10mH


RG = 25, IAS = 4.0A.

ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS,


TJ 150C

Pulse width 300s; duty cycle 2%.


Surface mounted on FR-4 board, t 10sec.

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IRF7313
100

100

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP

I D, Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

10

3.0V

20s PULSE WIDTH


TJ = 25C
A

1
0.1

10

3.0V

20s PULSE WIDTH


TJ = 150C
A

1
0.1

10

V DS , Drain-to-Source Voltage (V)

10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics


VDS

100

ISD , Reverse Drain Current (A)

I D , Drain-to-Source Current (A)

100

TJ = 25C
TJ = 150C
10

VDS = 10V
20s PULSE WIDTH

1
3.0

3.5

4.0

4.5

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

5.0

TJ = 150C
10

TJ = 25C

VGS = 0V

1
0.4

0.6

0.8

1.0

1.2

1.4

V SD , Source-to-Drain Voltage (V)

Fig 4. Typical Source-Drain Diode


Forward Voltage

1.6

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RDS(on) , Drain-to-Source On Resistance


(Normalized)

2.0

RDS (on) , Drain-to-Source On Resistance ()

IRF7313
ID = 5.8A

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = 10V
0

20

40

60

0.040

0.032

0.028

0.024

E AS , Single Pulse Avalanche Energy (mJ)

RDS (on) , Drain-to-Source On Resistance ()

0.08

0.06

I D = 5.8A
0.04

0.02

0.00
12

V GS , Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate


Voltage

20

30

40

Fig 6. Typical On-Resistance Vs. Drain


Current

0.10

10

I D , Drain Current (A)

0.12

A
0

Fig 5. Normalized On-Resistance


Vs. Temperature

V GS = 10V

0.020

80 100 120 140 160

TJ , Junction Temperature ( C)

V GS = 4.5V

0.036

15

200

TOP
BOTTOM

160

IIDD
1.8A
3.2A
4.0A

120

80

40

0
25

50

75

100

125

Starting T J , Junction Temperature (C)

Fig 8. Maximum Avalanche Energy


Vs. Drain Current

150

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IRF7313
20

V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd

900

VGS , Gate-to-Source Voltage (V)

C, Capacitance (pF)

1200

Ciss
Coss

600

Crss

300

A
1

10

100

ID = 5.8A
VDS = 15V

16

12

0
0

10

20

30

40

QG , Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance Vs.


Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs.


Gate-to-Source Voltage

Thermal Response (Z thJA )

100

0.50
0.20
10
0.10
0.05
0.02
1

PDM

0.01

t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA

SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001

0.0001

0.001

0.01

0.1

10

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

100

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IRF7313
Package Outline
SO8 Outline

DIM

D
-B-

A
6

5
H

E
-A-

0.25 (.010)

e
6X

A M

e1
A

-C-

0.10 (.004)

0.25 (.010)

L
8X

A1

B 8X

C
8X

M C A S B S

MIN

MAX

.0532

.0688

1.35

1.75

.0040

.0098

0.10

0.25

.014

.018

0.36

0.46

.0075

.0098

0.19

0.25

.189

.196

4.80

4.98

.150

.157

3.81

3.99

e1

MILLIMETERS

MAX

A1

K x 45

INCHES
MIN

.050 BASIC

1.27 BASIC

.025 BASIC

0.635 BASIC

.2284

.2440

.011

.019

0.28

5.80

0.48

6.20

0.16

.050

0.41

1.27

RECOMMENDED FOOTPRINT

NOTES:
0.72 (.028 )
8X

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.


2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46 ( .255 )

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

1.78 (.070)
8X

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).


6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information


SO8

EXAMPLE : THIS IS AN IRF7101

312
INTERNATIONAL
RECTIFIER
LOGO

DATE CODE (YWW)


Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX

F7101

TOP

PART NUMBER

WAFER
LOT CODE
(LAST 4 DIGITS)

BOTTOM

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IRF7313
Tape & Reel Information

SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

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Data and specifications subject to change without notice.
9/02