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A. M. Niknejad
p. 1
Rs
Rs
vo
Rs
+
vs
vi
vo
vi
RL
RL
VCC
A. M. Niknejad
p. 2
A. M. Niknejad
p. 3
PMOS
VDD
S
n+
G
p+
D
p+
p+
G
n+
Lov
D
n+
n-well
p-type substrate
p. 4
Rg
G
Cgs
+
vgs
gm vgs
gmb vbs
ro
Cdb
S
RS
Cgb
Csb
p. 5
G
Cgs
+
vgs
gm vgs
gmb vbs
ro
Cdb
S
Cgb
Csb
Layout parasitics
increase the capacitance values!
Cgd
G
Cgs
+
vgs
gm vgs
ro
Cdb
p. 6
IDS
rr
eg
io
VGS
lin
ea
output
resistance
VDS
IDS
W
= Cox
L
(VGS
VT )VDS
2
VDS
1
W
= Cox
(VGS
2
L
VT ) (1 + VDS )
p. 7
Transconductance
The transconductance in saturation is given by
gm =
dIDS
W
= Cox (VGS
dVGS
L
gm =
VT )(1 + VDS )
2IDS
2IDS
=q
2IDS
VGS VT
W
Cox
gm =
p
W
2Cox IDS IDS
L
p. 8
Gi =
ii
j(Cgs + Cgd )
The frequency of unity gain T is given by solving |Gi | = 1
T =
gm
Cgs + Cgd
A. M. Niknejad
p. 9
T =
2
Cgs + Cgd
3 W LCox
Canceling common factors we have
T =
3
(VGS
2
2L
VT )
A. M. Niknejad
p.
n+ poly contact
n+ emitter
p+
collector
field oxide
n+ buried layer
p-type substrate
p.
C
R
+
vin
gm vin
ro
Ccs
p.
Bipolar Exponential
Due to Boltzmann statistics, the collector current is described
very accurately with an exponential relationship
IC IS eqVbe kT
The device transconductance is therefore proportional to current
gm =
dIC
qIC
q qVbe
e
kT =
= IS
dVbe
kT
kT
A. M. Niknejad
p.
+
vin
gm vin
ro
Co
1
C
= X .
Since
r
0
= r C =
C
X
gm
T
Say 0 = 100 and the operating frequency is /T = 1/10. Then
we have r /X = 100 10 = 10.
A. M. Niknejad
p.
cbej
gm
gm
+ Cd + C
2Cje0 + gm F + Cjc
A. M. Niknejad
1
F +
2Cje0 +Cjc
gm
p.
No Kirk Effect
160
fT (GHz)
80
40
0
104
103
102
IC
p.
Cgs
W
L
Iin
+
vgs
1/gm
N Cgs
+
vgs
Iout
N gm vgs
io
gm2
gm2
=
=
is
Yin (s)
gm1 + sCin + N sCin
Gi =
A. M. Niknejad
gm2
gm1
1 + (N + 1) sT
p.
N
1+
s
T /(N +1)
N
T T
=
N +1
p.