2SK3018

Transistor

2.5V Drive Nch MOS FET

2SK3018
zExternal dimensions (Unit : mm)

zStructure
Silicon N-channel
MOSFET

UMT3
2.0

0.9
0.2

0.3

0.7

1.25
(1)

(2)

0.1Min.

zApplications
Interfacing, switching (30V, 100mA)

2.1

(3)

0.65 0.65
1.3

zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.

(1) Source

Each lead has same dimensions

(2) Gate

Abbreviated symbol : KN

(3) Drain

zEquivalent circuit

zPackaging specifications
Package
Type

0.15

Taping

Code

T106

Basic ordering unit

(pieces)

3000

Drain

2SK3018
Gate

Gate

zAbsolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

VDSS

30

Gate-source voltage

VGSS

20

Drain current

Continuous

ID

100

Pulsed

IDP1

400

mA

PD2

200

mW

Total power dissipation

Protection
Diode

A protection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.

mA

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Source

1 Pw10s, Duty cycle1%

2 With each pin mounted on the recommended lands.
zThermal resistance
Parameter
Channel to ambient

Symbol
Rth(ch-a)

Limits

Unit

625

C / W

With each pin mounted on the recommended lands.

Rev.B

1/3

2SK3018
Transistor
zElectrical characteristics (Ta=25C)
Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

IGSS

VGS = 20V, VDS = 0V

Drain-source breakdown voltage

V(BR)DSS

30

ID = 10A, VGS = 0V

Zero gate voltage drain current

IDSS

VDS = 30V, VGS = 0V

Gate threshold voltage

VGS(th)

0.8

1.5

VDS = 3V, ID = 100A

Static drain-source on-state

resistance

RDS(on)

ID = 10mA, VGS = 4V

RDS(on)

13

ID = 1mA, VGS = 2.5V

Forward transfer admittance

|Yfs |

20

mS

VDS = 3V, ID = 10mA

Input capacitance

Ciss

13

pF

VDS = 5V

Output capacitance

Coss

pF

VGS = 0V

Reverse transfer capacitance

Crss

pF

f = 1MHz

Turn-on delay time

td(on)

15

ns

ID = 10mA, VDD

tr

35

ns

VGS = 5V

td(off)

80

ns

RL = 500

tf

80

ns

RG = 10

Gate-source leakage

Rise time
Turn-off delay time
Fall time

5V

0.15

200m

Ta=25C
Pulsed

3.5V

50m

0.1

2.5V

0.05
2V

20m
10m
5m
2m

Ta=125C
75C
25C
25C

1m
0.5m

0.2m

VGS=1.5V

0
0

VDS=3V
Pulsed

100m

0.1m
0

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical output characteristics

20
10

50

VGS=4V
Pulsed

Ta=125C
75C
25C
25C

2
1
0.5
0.001 0.002

0.005

0.01

0.02

0.05

0.1

0.2

DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

resistance vs. drain current ( )

1.5

0.5

0
50 25

0.5

20
10
5

2
1
0.5
0.001 0.002

0.005

0.01

0.02

0.05

0.1

0.2

DRAIN CURRENT : ID (A)

Fig.5 Static drain-source on-state

resistance vs. drain current ()

25

50

75

100

125 150

Fig.3 Gate threshold voltage vs.

channel temperature

VGS=2.5V
Pulsed

Ta=125C
75C
25C
25C

VDS=3V
ID=0.1mA
Pulsed

CHANNEL TEMPERATURE : Tch (C)

Fig.2 Typical transfer characteristics

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) ()

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) ()

50

GATE-SOURCE VOLTAGE : VGS (V)

0.5

15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) ()

3V

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

4V

GATE THRESHOLD VOLTAGE : VGS(th) (V)

zElectrical characteristic curves

Ta=25C
Pulsed

10

ID=0.1A
ID=0.05A

0
0

10

15

20

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static drain-source

on-state resistance vs.
gate-source voltage

Rev.B

2/3

2SK3018
Transistor

0.5

VDS=3V
Pulsed

0.2

ID=100mA

6
ID=50mA

5
4

3
2

Ta=25C
25C
75C
125C

0.1
0.05
0.02
0.01

0.005

0.002

0
50 25

0.001
0.0001 0.0002

25

50

75

100 125

150

20m

0V

5m
2m

5m
2m
1m
0.5m
0.2m
0.1m

1m
0.5m

10

Coss
Crss

0.5

1.5

SOURCE-DRAIN VOLTAGE : VSD (V)

Ciss

Ta=125C
75C
25C
25C

10m

0.5

Fig.9 Reverse drain current vs.

source-drain voltage ( )

1000

Ta=25C
f=1MHZ
VGS=0V

20

50m

CAPACITANCE : C (pF)

REVERSE DRAIN CURRENT : IDR (A)

50

Ta=25C
Pulsed

VGS=4V

50m

Fig.8 Forward transfer

admittance vs. drain current

Fig.7 Static drain-source on-state

resistance vs. channel
temperature

100m

0.05 0.1 0.2

0.005 0.01 0.02

VGS=0V
Pulsed

20m

DRAIN CURRENT : ID (A)

CHANNEL TEMPERATURE : Tch (C)

200m

0.0005 0.001 0.002

200m

100m

Ta=25C
VDD=5V
VGS=5V
RG=10
Pulsed

tf

500
SWITCHING TIME : t (ns)

10m

REVERSE DRAIN CURRENT : IDR (A)

VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) ()

td(off)

200
100
50

20

tr
td(on)

10
5

0.2m
0.5
0.1

0.1m

0.5

1.5

0.2

0.5

10

20

50

2
0.1 0.2

DRAIN-SOURCE VOLTAGE : VDS (V)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.11 Typical capacitance vs.

drain-source voltage

Fig.10 Reverse drain current vs.

source-drain voltage ( )

0.5

10

20

50

100

DRAIN CURRENT : ID (mA)

Fig.12 Switching characteristics

(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)

zSwitching characteristics measurement circuit

Pulse width

VGS

RG

VGS
ID
D.U.T.

VDS
RL

50%

10%

VDS

VDD

10%
90%

90%
tr

td(on)
ton

Fig.13 Switching time measurement circuit

90%

50%
10%

td(off)

tf
toff

Fig.14 Switching time waveforms

Rev.B

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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