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General Description
Product Summary
VDS
100V
11A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 140m
< 152m
TO252
DPAK
TO251A
IPAK
Top View
Bottom View
Bottom View
Top View
D
D
S
D
Gate-Source Voltage
VGS
TC=25C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
20
V
A
24
2.5
IDSM
TA=70C
Units
V
IDM
TA=25C
Maximum
100
11
ID
TC=100C
C
Avalanche Current C
IAS, IAR
10
EAS, EAR
mJ
Power Dissipation B
TA=25C
Power Dissipation A
2.1
Steady-State
Steady-State
RJA
RJC
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1.3
TJ, TSTG
Symbol
t 10s
23
PDSM
TA=70C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
45
PD
TC=100C
-55 to 175
Typ
17
55
2.7
Max
25
60
3.3
Units
C/W
C/W
C/W
Page 1 of 6
AOD478/AOI478
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250A, VGS=0V
100
Max
1
TJ=55C
IGSS
VDS=VGS ID=250A
1.7
ID(ON)
VGS=10V, VDS=5V
24
Units
V
VDS=100V, VGS=0V
VGS(th)
100
nA
2.2
2.8
116
140
225
270
VGS=4.5V, ID=3A
121
152
17
1
12
VGS=10V, ID=4.5A
RDS(ON)
Typ
TJ=125C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
IS=1A,VGS=0V
IS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
0.76
350
445
540
pF
18
29
35
pF
16
23
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10.3
13
nC
5.1
6.5
nC
Coss
Output Capacitance
Crss
Rg
Gate resistance
Qgs
Qgd
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
1.6
nC
2.4
nC
ns
ns
17
ns
4.5
IF=4.5A, dI/dt=500A/s
ns
14.5
21
27.5
68
97
126
ns
nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Page 2 of 6
AOD478/AOI478
15
VDS=5V
10V
4V
12
4.5V
10
9
ID(A)
ID (A)
6V
VGS=3.5V
125C
3
25C
0
0
0
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
180
Normalized On-Resistance
2.6
160
RDS(ON) (m
)
140
VGS=4.5V
120
VGS=10V
2.4
2.2
VGS=10V
ID=4.5A
17
5
2
VGS=4.5V 10
1.8
1.6
1.4
1.2
ID=3A
1
0.8
100
0
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
280
1.0E+01
ID=4.5A
260
1.0E+00
240
125C
40
1.0E-01
IS (A)
RDS(ON) (m
)
220
200
180
125C
1.0E-02
25C
1.0E-03
160
140
1.0E-04
120
25C
1.0E-05
100
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD478/AOI478
700
VDS=50V
ID=4.5A
600
Ciss
500
Capacitance (pF)
VGS (Volts)
400
300
200
Coss
Crss
100
0
0
0
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
400
100.0
TJ(Max)=175C
TC=25C
360
10s
10.0
320
10s
RDS(ON)
limited
1.0
100s
DC
0.1
280
Power (W)
ID (Amps)
100
1ms
10ms
17
5
2
10
240
200
160
120
TJ(Max)=175C
TC=25C
80
40
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
Z JC Normalized Transient
Thermal Resistance
0.01
0.1
10
0.001
D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RJC=3.3C/W
PD
0.1
Ton
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
10
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Page 4 of 6
AOD478/AOI478
100
TA=100C
TA=150C
10
TA=125C
40
30
20
10
0
1
10
100
Time in avalanche, tA (
s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (C)
Figure 13: Power De-rating (Note F)
175
10000
15
TA=25C
12
1000
Power (W)
50
17
5
2
10
100
10
3
0
0
25
50
75
100
125
150
TCASE (C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
175
0.001
Z JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RJA=60C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
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Page 5 of 6
AOD478/AOI478
+
+ Vds
VDC
Qgs
Qgd
VDC
DUT
Vgs
Ig
Charge
+ Vdd
DUT
Vgs
VDC
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
Rg
Id
DUT
Vgs
Vgs
Vds +
DUT
Vds Isd
Vgs
Ig
Vgs
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
IF
Vds
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Page 6 of 6