CS12N60F

Silicon
N-Channel
Power MOSFET
CS12N60F A9R
General Description
VDSS
600
ID
12
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25)
42
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.57
CS12N60F A9R, the silicon N-channel Enhanced
performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.75)
l Low Gate Charge
(Typical Data:40nC)
l Low Reverse transfer capacitances(Typical:10pF)

l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25 unless otherwise specified

Symbol
Parameter
VDSS
ID
IDM
a1
VGS
EAS
a2
dv/dt
a3
PD
Rating
Units
Drain-to-Source Voltage
600
Continuous Drain Current
12
Continuous Drain Current T C = 100 C
7.5
Pulsed Drain Current
48
Gate-to-Source Voltage
30
Single Pulse Avalanche Energy
670
mJ
Peak Diode Recovery dv/dt
5.0
V/ns
Power Dissipation
42
0.34
W/
15055 to 150
300
Derating Factor above 25C
TJT stg
Operating Junction and Storage Temperature Range
TL
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
Electrical CharacteristicsTc= 25 unless otherwise specified

OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID =250A
BVDSS/T J
Bvdss Temperature Coefficient
ID=250uA,Reference25
IDSS
Drain to Source Leakage Current
VDS =600V, V GS= 0V,

Ta = 25
VDS =480V, V GS= 0V,
Ta = 125
IGSS(F)
Gate to Source Forward Leakage
IGSS(R)
Gate to Source Reverse Leakage
Rating
Unit
s
Min.
Typ.
Max.
600
--
--
--
0.67
--
V/
--
--
--
--
100
VGS =+30V
--
--
100
nA
VGS =-30V
--
--
-100
nA
ON Characteristics
Symbol
Parameter
Test Conditions
R DS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID =6A
VGS(TH)
Gate Threshold Voltage
VDS = V GS , ID = 250A
Rating
Units
Min.
Typ.
Max.
--
0.57
0.75
2.0
--
4.0
Pulse width tp300s,2%

Dynamic Characteristics
Symbol
Parameter
Test Conditions
g fs
Forward Transconductance
VDS=15V, ID =6A
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
VGS = 0V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
--
12
--
--
1980
--
--
170
--
--
10
--
Units
S
pF
Resistive Switching Characteristics

Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (Miller)Charge
Test Conditions
ID =12A VDD = 300V

RG =10
ID =12A V DD =480V
VGS = 10V
Rating
Min.
Typ.
Max.
--
27
--
--
25
--
--
63
--
--
39
--
--
40
--
--
9.8
--
--
14.5
--
Pag e 2 of 1 0
Units
2 0 1 5 V0 1
ns
nC
CS12N60F A9R
Source-Drain Diode Characteristics

Symbol
Parameter
IS
Test Conditions
Rating
Units
Min.
Typ.
Max.
Continuous Source Current (Body Diode)
--
--
12
ISM
Maximum Pulsed Current (Body Diode)
--
--
48
VSD
Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
--
581
--
ns
Qrr
Reverse Recovery Charge
--
4009
--
nC
IRRM
Reverse Recovery Current
--
13.8
--
IS =12A,VGS=0V
IS =12A,Tj = 25
dIF /dt=100A/us,
VGS=0V
Pulse width tp300s,2%

Symbol
Parameter
Typ.
Units
R JC
Junction-to-Case
2.98
/W
R JA
Junction-to-Ambient
62.5
/W
a1
Repetitive rating; pulse width limited by maximum junction temperature

L=10mH, ID=11.6A, Start T J=25
a3
ISD =12A,di/dt 100A/us,V DDBV DS, Start T J=25
a2
Pag e 3 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
Characteristics Curve
48
10
100us
1ms
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25 Single Pulse
0 .1
0 .0 1
1
10ms
PD , Power Dissipation Watts
Id , Drain Current , Amps
100
24
12
DC
0
10
100
V d s , D r a in - t o - S o u r c e V o lta g e , V o lts
1000
Figure 1 Maximum Forward Bias Safe Operating Area
25
50
100
75
TC , Case Temperature , C
24
12
125
150
Figure 2 Maximum Power Dissipation vs Case Temperature
18
36
250us Pluse Test

Tc = 25
VGS=10V
18
VGS=7V
12
VGS=5V
VGS=6V
VGS=4.5V
0
0
25
75
100
125
50
TC , Case Tem perature , C
150
Figure 3 Maximum Continuous Drain Current vs Case Temperature
10
15
20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impendance , Junction to Case

Pag e 4 of 1 0
2 0 1 5 V0 1
25
CS12N60F A9R
16
Isd, Reverse Drain Current , Amps
30
250us Pulse Test
VDS=20V
25
20
15
+25
10
+150
5
0
12
8
+150
+25
4
6
8
Vgs , Gate to Source Voltage , Volts
10
Rds(on), Drain to Source ON Resistance,

Nomalized
0.9
PULSE DURATION = 10s
DUTY CYCLE= 0.5%MAX
Tc =25
0.8
VGS=10V
0.7
0.6
0.5
0
0.2
0.4
0.6
0.8
1
Vsd , Source - Drain Voltage , Volts
1.2
Figure 7 Typical Body Diode Transfer Characteristics
Figure 6 Typical Transfer Characteristics
Rds(on), Drain to Source ON

Resistance, Ohms
2.5
2.25
PULSE DURATION = 10s

DUTY CYCLE= 0.5%MAX
VGS=10V ID=3.5A
2
1.75
1.5
1.25
1
0.75
0.5
8
12
Figure 8 Typical Drain to Source ON Resistance

vs Drain Current
16
-50
50
100
Tj, Junction temperature , C
Figure 9 Typical Drian to Source on Resistance

vs Junction Temperature
Pag e 5 of 1 0
2 0 1 5 V0 1
150
CS12N60F A9R
1.15
1.15
1.1
Bvdss,Drain to Source
Breakdown Voltage, Normalized
1.05
1
0.95
0.9
VGS=0V
ID=250A
0.85
0.8
0.75
1.05
VGS=0V
ID=250A
0.95
0.85
0.7
0.65
-75
-50
-25
0.75
-55
0
25 50 75 100 125 150 175
-30
-5
20
45
70
95
120
145
170
Figure 11 Typical Breakdown Voltage vs Junction Temperature
Figure 10 Typical Theshold Voltage vs Junction Temperature
12
Ciss
Coss
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Crss
Vgs , Gate to Source Voltage ,Volts
Vgs(th),Threshold Voltage, Nomalized
VDS=480V
VDS=300V
VDS=120V
10
8
6
4
2
ID=12A
0
0
Figure 12 Typical Capacitance vs Drain to Source Voltage
10
20
30
Qg , Total Gate Charge , nC
40
50
Figure 13 Typical Gate Charge vs Gate to Source Voltage
Pag e 6 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
Test Circuit and Waveform
Pag e 7 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
Pag e 8 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
Package Information
Items
Values(mm)
MIN
MAX
9.60
10.40
15.40
16.20
B1
8.90
9.50
4.30
4.90
C1
2.10
3.00
2.40
3.00
0.60
1.00
0.30
0.60
1.12
1.42
3.40
3.80
2.00
2.40
12.00
14.00
6.30
7.70
2.34
2.74
3.15
3.55
3.00
3.30
TO-220F Package
Pag e 9 of 1 0
2 0 1 5 V0 1
CS12N60F A9R
The name and content of poisonous and harmful material in products

Hazardous Substance
Parts Name
Pb
0.1%
Limit
Hg
Cd
Cr(VI)
PBB
PBDE
0.1%
0.01%
0.1%
0.1%
0.1%
Lead Frame
Molding Compound
Chip
Wire Bonding
Solder
means the hazardous material is under the criterion of SJ/T11363-2006.

Note
means the hazardous material exceeds the criterion of SJ/T11363-2006.

The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroups RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Add No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU
Marketing Part
Post214061
UTH
Tel +86 0510-81805277/81805336

Fax: +86 0510-85800360/85803016
E-mailsales@hj.crmicro.com
Application and ServicePost214061 Tel / Fax+86- 0510-81805243/81805110
Page 10 of 10
2 0 1 5 V0 1

CS12N60F

Загружено:

Сведения о документе

Исходное описание:

Авторское право

Доступные форматы

Поделиться этим документом

Поделиться или встроить документ

Параметры публикации

Этот документ был вам полезен?

Это неприемлемый материал?

Авторское право:

Доступные форматы

CS12N60F

Загружено:

Авторское право:

Доступные форматы

Silicon

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

CS12N60F A9R, the silicon N-channel Enhanced

performance and enhance the avalanche energy. The transistor

l Low Reverse transfer capacitances(Typical:10pF)

AbsoluteTc= 25 unless otherwise specified

Continuous Drain Current

Continuous Drain Current T C = 100 C

Pulsed Drain Current

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Derating Factor above 25C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

Electrical CharacteristicsTc= 25 unless otherwise specified

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

Drain to Source Leakage Current

VDS =600V, V GS= 0V,

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

Gate Threshold Voltage

Pulse width tp300s,2%

Reverse Transfer Capacitance

Resistive Switching Characteristics

Turn-on Delay Time

Turn-Off Delay Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (Miller)Charge

ID =12A VDD = 300V

Source-Drain Diode Characteristics

Continuous Source Current (Body Diode)

Maximum Pulsed Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Pulse width tp300s,2%

Repetitive rating; pulse width limited by maximum junction temperature

PD , Power Dissipation Watts

Id , Drain Current , Amps

Figure 1 Maximum Forward Bias Safe Operating Area

Id , Drain Current , Amps

Figure 2 Maximum Power Dissipation vs Case Temperature

250us Pluse Test

Figure 3 Maximum Continuous Drain Current vs Case Temperature

Figure 4 Typical Output Characteristics

Figure 5 Maximum Effective Thermal Impendance , Junction to Case

Id , Drain Current , Amps

Rds(on), Drain to Source ON Resistance,

Figure 7 Typical Body Diode Transfer Characteristics

Figure 6 Typical Transfer Characteristics

Rds(on), Drain to Source ON

PULSE DURATION = 10s

Figure 8 Typical Drain to Source ON Resistance

Figure 9 Typical Drian to Source on Resistance

Figure 11 Typical Breakdown Voltage vs Junction Temperature

Figure 10 Typical Theshold Voltage vs Junction Temperature

Vgs , Gate to Source Voltage ,Volts

Vgs(th),Threshold Voltage, Nomalized

Figure 12 Typical Capacitance vs Drain to Source Voltage