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RFG60P06E

Data Sheet

July 1999

60A, 60V, 0.030 Ohm, ESD Rated,


P-Channel Power MOSFET

60A, 60V

2kV ESD Rated

The RFG60P06E incorporates ESD protection and is


designed to withstand 2kV (Human Body Model) of ESD.

Related Literature

Formerly developmental type TA09836.

Symbol

rDS(ON) = 0.030
Temperature Compensating PSPICE Model

Peak Current vs Pulse Width Curve


UIS Rating Curve
175oC Operating Temperature

Ordering Information
RFG60P06E

PACKAGE
TO-247

3989.3

Features

The RFG60P06E P-Channel power MOSFET is


manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

PART NUMBER

File Number

BRAND
G

RFG60P06E

NOTE: When ordering use the entire part numberr RFG60P06E.

Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)

4-154

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999.

RFG60P06E
Absolute Maximum Ratings

TC = 25oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS


Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
MIL-STD-883, Category B(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

RFG60P06E
-60
-60
20
60
Refer to Peak Current Curve
Refer to UIS Curve
2

UNITS
V
V
V
A

215
1.43
-55 to 175

W
W/oC
oC

300
260

oC
oC

KV

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V

-60

Gate To Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A

-2

-4

-1

-50

100

nA

Zero Gate Voltage Drain Current

IDSS

Gate to Source Leakage Current

IGSS

Drain to Source On Resistance

rDS(ON)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time

VDS = -60V,
VGS = 0V

TC = 25oC
TC = 150oC

VGS = 20V
ID = 60A, VGS = -10V

0.030

VDD = -30V, ID = 30A,


RL = 1.0, VGS = -10V,
RGS = 2.5

125

ns

20

ns

tr

60

ns

td(OFF)

65

ns

tf

20

ns

125

ns

450

nC

225

nC

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0 to -20V

Gate Charge at -10V

Qg(-10)

VGS = 0 to -10V

Threshold Gate Charge

Qg(TH)

VGS = 0 to -2V

15

nC

VDS = -25V, VGS = 0V,


f = 1MHz

7200

pF

1700

pF

325

pF

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDD = -48V,
ID = 60A,
RL = 0.8

Thermal Resistance Junction to Case

RJC

0.70

oC/W

Thermal Resistance Junction to Ambient

RJA

80

oC/W

MAX

UNITS

Source to Drain Diode Specifications


PARAMETER

SYMBOL

Source to Drain Diode Voltage

VSD

Diode Reverse Recovery Time

trr

TEST CONDITIONS

MIN

TYP

ISD = 45A

1.5

ISD = 45A, dISD/dt = 100A/s

125

ns

NOTES:
2. Pulse test: pulse width 300s maximum, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-155

RFG60P06E
Unless Otherwise Specified

1.2

-70

1.0

-60
ID , DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

Typical Performance Curves

0.8
0.6
0.4
0.2

-50
-40
-30
-20
-10
0

0
0

25

50
75
100
125
TC , CASE TEMPERATURE (oC)

150

25

175

50

75

100

125

150

175

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE


TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs


CASE TEMPERATURE

ZJC, NORMALIZED
THERMAL IMPEDANCE

1
0.5
0.2
PDM

0.1
0.1

0.05
t1
t2

0.02
0.01

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC

SINGLE PULSE
0.01
10-5

10-4

10-3
10-2
10-1
t , RECTANGULAR PULSE DURATION (s)

100

101

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-103

-500

-100

100s

1ms
-10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
-1
-1

10ms
100ms
DC
VDSS MAX = -60V
-10

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

4-156

-60

IDM , PEAK CURRENT (A)

ID , DRAIN CURRENT (A)

VGS = -10V

FOR TEMPERATURES ABOVE 25oC


DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175 T C
I = I 25 ------------------------
150

TC = 25oC

-100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-50
10-5

10-4

10-3

10-2

10-1

100

t , PULSE WIDTH (ms)

FIGURE 5. PEAK CURRENT CAPABILITY

101

RFG60P06E
Typical Performance Curves

Unless Otherwise Specified

(Continued)

-200

-120

ID, DRAIN CURRENT (A)

IAS , AVALANCHE CURRENT (A)

-100

STARTING TJ = 150oC

If R = 0
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)

VGS = -8V

VGS = -7V

-90
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
TC = 25oC

VGS = -10V
-60

VGS = -6V
-30

VGS = -4.5V

VGS = -5V

If R 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-10
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)

0
10

175oC

-90
25oC
-60

-30

-6

-8

PULSE DURATION = 80s


DUTY CYCLE = 0.5% MAX
VGS = -10V, ID = -60A
1.5

1.0

0.5

-2

-4

-6

-8

-10

-80

-40

FIGURE 8. TRANSFER CHARACTERISTICS

1.0

0.5

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs


JUNCTION TEMPERATURE

4-157

80

120

160

200

2.0

VGS = VDS, ID = - 250A

1.5

0
-80

40

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON


RESISTANCE vs JUNCTION TEMPERATURE

NORMALIZED DRAIN TO SOURCE


BREAKDOWN VOLTAGE

2.0

TJ , JUNCTION TEMPERATURE (oC)

VGS , GATE TO SOURCE VOLTAGE (V)

NORMALIZED GATE
THRESHOLD VOLTAGE

-4

2.0

-55oC

VDD = -15V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX

-2

FIGURE 7. SATURATION CHARACTERISTICS

NORMALIZED ON RESISTANCE

-120

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

ID(ON), ON STATE DRAIN CURRENT (A)

VGS = -20V

STARTING TJ = 25oC

ID = -250A

1.5

1.0

0.5

0
-80

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN


VOLTAGE vs JUNCTION TEMPERATURE

RFG60P06E
Unless Otherwise Specified

(Continued)

8000
VDS , DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz


C, CAPACITANCE (pF)

-10

-60
CISS

6000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS

4000

COSS

2000

CRSS
0
0

-5

-10

-15

-20

-5.0

-30

-15

20

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

-7.5

RL = 1.0
IG(REF) = -4mA
VGS = -10V

-25

VDD = BVDSS

VDD = BVDSS
-45

0.75 BVDSS

0.75 BVDSS

0.50 BVDSS
0.25 BVDSS

0.50 BVDSS
0.25 BVDSS

IG(REF)

t, TIME (s)

IG(ACT)

80

-2.5

IG(REF)
IG(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.


FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT

Test Circuits and Waveforms


VDS
tAV
L

VARY tP TO OBTAIN
REQUIRED PEAK IAS

RG

0V
VGS

VDD

DUT
tP

VDD

IAS

IAS

VDS

tP

0.01

BVDSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS


tON

tOFF
td(OFF)

td(ON)
VDS

tr

RL

tf
10%

10%

VGS

VDS

VDD

90%

90%

VGS

DUT

10%

RGS

50%
VGS

FIGURE 16. SWITCHING TIME TEST CIRCUIT

4-158

50%
PULSE WIDTH
90%

FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

VGS , GATE TO SOURCE VOLTAGE (V)

Typical Performance Curves

RFG60P06E
Test Circuits and Waveforms

(Continued)

VDS
RL

VDS

Qg(TH)

0
VGS = -2V

VGS

Qg(-10)

DUT

VGS = -10V

-VGS
VDD

VGS = -20V

VDD

Ig(REF)
Qg(TOT)
0
IG(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT

4-159

FIGURE 19. GATE CHARGE WAVEFORMS

RFG60P06E
PSPICE Electrical Model
RFG60P06E

2 1 3;

REV 9/20/94

CA 12 8 1.01e-8
CB 15 14 1.05e-8
CIN 6 8 6.9e-9

ESG
10

DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD

8
6

DRAIN

5
+

LDRAIN

RDRAIN
DPLCAP

EBREAK 5 11 17 18 -76.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1

VTO

LGATE

EVTO

RGATE
9

GATE

20

18
8

DBREAK

CIN
8

S1A

MOS1 16 6 8 8 MOSMOD M=0.99


MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 12.83e-3
RGATE 9 20 1.5
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.25e-3
RVTO 18 19 RVTOMOD 1

LSOURCE

RSOURCE
7

S2A

13
8
S1B

DBODY

11

MOS1

6
RIN

12

+
17
18

MOS2

21

IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 7.9e-9
LSOURCE 3 7 4.18e-9

EBREAK

16

.SUBCKT

14
13
13

CA

15

17

S2B

SOURCE
18

RVTO
CB

+
6
EGS
8

RBREAK

+
EDS

IT
14
5
8

19

VBAT
+

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.83
.MODEL DBDMOD D (IS=1.24e-12 RS=4.72e-3 TRS1=1.43e-3 TRS2=-4.91e-7 CJO=6.98e-9 TT=1.5e-7)
.MODEL DBKMOD D (RS=1.11e-1 TRS1=1.34e-3 TRS2=4.46e-12)
.MODEL DPLCAPMOD D (CJO=15e-10 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.71 KP=31.5 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.42e-4 TC2=0)
.MODEL RDSMOD RES (TC1=5.85e-3 TC2=7.69e-6)
.MODEL RVTOMOD RES (TC1=-3.39e-3 TC2=1.07e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.6 VOFF=2.6)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.6 VOFF=4.6)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.16 VOFF=-3.84)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.84 VOFF=1.16)

.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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4-160