2N/PN/SST4391 Series

Vishay Siliconix

N-Channel JFETs
2N4391

PN4391

SST4391

2N4392

PN4392

SST4392

2N4393

PN4393

SST4393

PRODUCT SUMMARY
Part Number

VGS(off) (V)

rDS(on) Max (
)

ID(off) Typ (pA)

tON Typ (ns)

2N/PN/SST4391

4 to 10

30

2N/PN/SST4392

2 to 5

60

2N/PN/SST4393

0.5 to 3

100

FEATURES

BENEFITS

APPLICATIONS

D Low On-Resistance: 4391<30

D Fast SwitchingtON: 4 ns
D High Off-Isolation: ID(off) with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss

D
D
D
D
D

D
D
D
D
D
D

Low Error Voltage

High-Speed Analog Circuit Performance
Negligible Off-Error, Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering

Analog Switches
Choppers
Sample-and-Hold
Normally On Switches
Current Limiters
Commutators

DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.

TO-206AA
(TO-18)

The 2N series hermetically-sealed TO-206AA (TO-18) can is

available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.

TO-226AA
(TO-92)

TO-236
(SOT-23)

3
S

1
G

G and Case
Top View

Top View

Top View

2N4391
2N4392
2N4393

PN4391
PN4392
PN4393

SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236

For applications information see AN104 and AN106

.
Document Number: 70241
S-04028Rev. F, 04-Jan-01

www.vishay.com

7-1

2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:

(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . 40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . 35 V

Operating Junction Temperature :

(2N Prefix) . . . . . . . . . . . . . . . . . . 55 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . 55 to 150 _C

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Power Dissipation :

Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C

Storage Temperature :

(2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW

(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW

Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C

(2N Prefix) . . . . . . . . . . . . . . . . . . 65 to 200 _C

(PN/SST Prefixes) . . . . . . . . . . . 55 to 150 _C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
4391

Parameter

Symbol

Test Conditions

Typa

V(BR)GSS

IG = 1 A, VDS = 0 V

55

Min

40

4392

Max

Min

4393

Max

Min

Max

Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain
Currentb

VGS(off)

IDSS

VDS = 20 V

2N/PN: ID = 1 nA

VDS = 15 V

SST: ID = 10 nA

VDS = 20 V, VGS = 0 V

VGS = 20 V
VDS = 0 V
Gate Reverse Current

Gate Operating Current

IGSS

IG

ID(off)
VDS = 20 V
TA = 150_C

VDS = 20 V
TA = 100_C
VDS = 10 V
TA = 125_C
Drain-Source
On-Voltage

VDS(on)

VGS = 0 V

0.5

50

150

25

75

30

50

150

25

100

60

SST

50

25

2N/SST

100

100

100

PN

1000

1000

1000

13

200

200

200

200

200

200

SST: TA = 125_C

2N: VGS = 7 V

5
5

PN: VGS = 5 V

0.005

PN: VGS = 7 V

0.005

PN: VGS = 12 V

0.005

100

2N: VGS = 5 V

13

2N: VGS = 7 V

13

2N: VGS = 12 V

13

PN: VGS = 5 V

PN: VGS = 7 V

PN: VGS = 12 V

SST: VGS = 10 V

ID = 3 mA

0.25

ID = 6 mA

0.3

ID = 12 mA

0.35

VGS(F)

IG = 1 mA
VDS = 0 V

nA

100

2N

0.7

PN/SST

0.7

pA

100

2N: VGS = 12 V

Gate-Source
Forward Voltage

pA

2N: VGS = 5 V

VGS = 0 V, ID = 1 mA

mA

2N: TA = 150_C

rDS(on)

7-2

10

PN: TA = 100_C

Drain-Source
On-Resistance

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V
4

2N

SST VDS = 10 V, VGS = 10 V

Drain Cutoff Current

40

PN

VDG = 15 V, ID = 10 mA

VDS = 20 V

40

100
1
1

100

nA

100

pA

200
200
200
200

nA

200
200

0.4
0.4

0.4
30

60

100

V

Document Number: 70241

S-04028Rev. F, 04-Jan-01

2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391

Parameter

Symbol

Typa

Test Conditions

Min

4392

Max

Min

4393

Max

Min

Max

Unit

Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance

Common-Source
Reverse Transfer
Capacitance

Equivalent Input
Noise Voltage

gfs

mS

25

S

VDS = 20 V, ID = 1 mA, f = 1 kHz

gos
rDS(on)

Ciss

Crss

en

VGS = 0 V, ID = 0 mA , f = 1 kHz

VDS = 20 V, VGS = 0 V
f = 1 MHz

VDS = 0 V
f = 1 MHz

30

60

100

2N

12

14

14

14

PN

12

16

16

16

SST

13

2N: VGS = 5 V

3.3

2N: VGS = 7 V

3.2

2N: VGS = 12 V

2.8

PN: VGS = 5 V

3.5

PN: VGS = 7 V

3.4

PN: VGS = 12 V

3.0

SST: VGS = 5 V

3.6

SST: VGS = 7 V

3.5

SST: VGS = 12 V

3.1

VDS = 10 V, ID = 10 mA
f = 1 kHz

3.5
3.5
3.5
5

pF

5
5

nV
Hz

Switching
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf

VDD = 10 V
VGS(H) = 0 V
See Switching Circuit

2N/PN

SST

2N/PN

SST

2N/PN

SST

2N/PN

13

SST

13

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 s duty cycle v3%.

Document Number: 70241

S-04028Rev. F, 04-Jan-01

15

15

15

20

35

50

15

20

30

ns

NCB

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7-3

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

80

160
IDSS

rDS

60

120

40

80

20

40

rDS(on) Drain-Source On-Resistance ( )

rDS @ ID = 1 mA, VGS = 0 V

IDSS @ VDS = 20 V, VGS = 0 V

TA = 25_C
80
VGS(off) = 2 V
60

40

4 V
8 V

20

0
2
4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)

On-Resistance vs. Drain Current

100

200
IDSS Saturation Drain Current (mA)

rDS(on) Drain-Source On-Resistance ( )

100

10

10
ID Drain Current (mA)

Turn-On Switching

On-Resistance vs. Temperature

5

tr approximately independent of ID
VDD = 5 V, RG = 50 W
VGS(L) = 10 V

ID = 1 mA
rDS changes X 0.7%/_C
160

4
tr
Switching Time (ns)

rDS(on) Drain-Source On-Resistance ( )

200

120
VGS(off) = 2 V
80
4 V
8 V

40

0
55 35

3
td(on) @
ID = 12 mA
2
td(on) @
ID = 3 mA

0
15

5
65
25 45
TA Temperature (_C)

85

105

125

Turn-Off Switching

30

10

f = 1 MHz
VDS = 0 V
24

18

Capacitance (pF)

24
Switching Time (ns)

2
4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)

Capacitance vs. Gate-Source Voltage

30

td(off) independent of device VGS(off)

VDD = 5 V, VGS(L) = 10 V

VGS(off) = 2 V
tf

12

18

12

td(off)

Ciss
6

6
VGS(off) = 8 V

Crss
0

0
0

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7-4

100

4
6
ID Drain Current (mA)

10

4
8
12
16
VGS Gate-Source Voltage (V)

20

Document Number: 70241

S-04028Rev. F, 04-Jan-01

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*

Noise Voltage vs. Frequency

100

50

500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz

Hz
en Noise Voltage nV /

10
ID = 1 mA

ID = 10 mA

1
10

100

1k
f Frequency (Hz)

10 k

40

400

gfs

30

200

10

100

VDG = 10 V
ID = 10 mA
TA = 25_C

ID = 10 mA

1 mA
10 pA

10 mA

10

1 mA

100 pA

10

gig

big

(mS)

IG Gate Leakage)

1 nA

4
6
8
VGS(off) Gate-Source Cutoff Voltage (V)

100

IGSS @ 125_C
TA = 125_C

Common-Gate Input Admittance

Gate Leakage Current

10 nA

200

20

100 k

gos

gos Output Conductance (S)

gfs Forward Transconductance (mS)

VDS = 10 V

IGSS @ 25_C

TA = 25_C
1 pA
IG(on) @ ID
0.1 pA

0.1
0

12
18
24
VDG Drain-Gate Voltage (V)

100

30

Common-Gate Forward Admittance

100

VDG = 10 V
ID = 10 mA
TA = 25_C

bfg
1.0

10
(mS)

gfg

(mS)

1000

Common-Gate Reverse Admittance

10

VDG = 10 V
ID = 10 mA
TA = 25_C
gfg

200
500
f Frequency (MHz)

brg

grg

+grg

0.1

0.01

0.1
100

Document Number: 70241

S-04028Rev. F, 04-Jan-01

200
500
f Frequency (MHz)

1000

100

200
500
f Frequency (MHz)

1000

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7-5

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current

Common-Gate Output Admittance

100

100

VGS(off) = 2 V
gfs Forward Transconductance (mS)

VDG = 10 V
ID = 10 mA
TA = 25_C
bog

(mS)

10
gog

0.1

TA = 55_C
25_C
10

125_C

1
100

200

500

0.1

1000

1.0

10

ID Drain Current (mA)

f Frequency (MHz)

Output Characteristics

Transfer Characteristics

100

100
VGS(off) = 4 V

VGS(off) = 4 V

VDS = 20 V

80
ID Drain Current (mA)

80
ID Drain Current (mA)

VDS = 10 V
f = 1 kHz

VGS = 0 V

60

0.5 V
40

1.0 V
1.5 V

20

TA = 55_C
60
25_C
40

20

2.0 V

125_C
2.5 V
0

0
0

10

VDS Drain-Source Voltage (V)

VGS Gate-Source Voltage (V)

VDD

RL

SWITCHING TIME TEST CIRCUIT

4391

OUT

4392

4393

VGS(L)

12 V

7 V

5 V

RL*

800

1600

3000

ID(on)

12 mA

6 mA

3 mA

VGS(H)
VGS(L)
1 k

51

*Non-inductive

INPUT PULSE

SAMPLING SCOPE

Rise Time < 1 ns

Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz

Rise Time 0.4 ns

Input Resistance 10 M

Input Capacitance 1.5 pF

VIN
Scope

51

See Typical Characteristics curves for changes.

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7-6

Document Number: 70241

S-04028Rev. F, 04-Jan-01

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Vishay

Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000

Revision: 18-Jul-08

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1