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FDP083N15A _F102

N-Channel PowerTrench MOSFET


150 V, 117 A, 8.3 m
Features

Description

RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A

This N-Channel MOSFET is produced using Fairchild


Semiconductors advanced PowerTrench process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.

Fast Switching Speed


Low Gate Charge, QG = 64.5 nC(Typ.)
High Performance Trench Technology for Extremely Low
RDS(on)

Applications
Synchronous Rectification for ATX / Server / Telecom PSU

High Power and Current Handling Capability

Battery Protection Circuit

RoHS Compliant

Motor drives and Uninterruptible Power Supplies


Micro Solar Inverter

G
DS

TO-220
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted


Symbol
VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

ID

Drain Current

IDM

Drain Current

EAS

Single Pulsed Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

-Continuous (TC = 25oC, Silicon Limited)

Unit
V

20

117

-Continuous (TC = 100oC, Silicon Limited)

83

- Pulsed

(Note 1)

468

(Note 2)

542

mJ

V/ns

(Note 3)
(TC = 25oC)

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range


Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds

TL

FDP083N15A_F102
150

- Derate above 25oC

294

1.96

W/oC

-55 to +175

oC
o

300

*Package limitation current is 120A.

Thermal Characteristics
Symbol

Parameter

FDP083N15A_F102

RJC

Thermal Resistance, Junction to Case, Max.

0.51

RJA

Thermal Resistance, Junction to Ambient, Max.

62.5

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

Unit
o

C/W

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

March 2013

Device Marking
FDP083N15A

Device
FDP083N15A_F102

Package
TO-220

Description
F102: Trimmed Leads

Quantity
50

Electrical Characteristics TC = 25oC unless otherwise noted


Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

150

0.08

V/oC

Off Characteristics
BVDSS
BVDSS
TJ

Drain to Source Breakdown Voltage


Breakdown Voltage Temperature
Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250A, VGS = 0V, TC = 25oC


ID = 250A, Referenced to

25oC

VDS = 120V, VGS = 0V

VDS = 120V, TC = 150oC

500

VGS = 20V, VDS = 0V

100

A
nA

On Characteristics
VGS(th)
RDS(on)

Gate Threshold Voltage

VGS = VDS, ID = 250A

2.0

4.0

Static Drain to Source On Resistance

VGS = 10V, ID = 75A

6.85

8.30

gFS

Forward Transconductance

VDS = 10V, ID = 75A

139

VDS = 25V, VGS = 0V


f = 1MHz

4645

6040

pF

1445

1880

pF
pF

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Qg(tot)

Total Gate Charge at 10V

Qgs

Gate to Source Gate Charge

Qgs2

Gate Charge Threshold to Plateau

Qgd

Gate to Drain Miller Charge

ESR

Equivalent Series Resistance(G-S)

VDS = 75V, VGS = 0V


f = 1MHz

100

4570

6040

pF

460

1880

pF

20

pF

64.5

84

nC

19.1

nC

8.7

nC

13.5

nC

f=1MHz

2.5

VDD = 75V, ID = 75A


VGS = 10V, RGEN = 4.7

22

54

ns

58

126

ns

VDS = 120V, ID = 75A


VGS = 10V
(Note 4)

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

(Note 4)

61

132

ns

26

62

ns

Drain-Source Diode Characteristics


IS

Maximum Continuous Drain to Source Diode Forward Current

117

ISM

Maximum Pulsed Drain to Source Diode Forward Current

468

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

1.25

trr

Reverse Recovery Time

96

ns

Qrr

Reverse Recovery Charge

VGS = 0V, ISD = 75A


dIF/dt = 100A/s

268

nC

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25C, L = 3mH, ISD = 19A
3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics


300

VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V

100
ID, Drain Current[A]

ID, Drain Current[A]

500

100

175 C
o

25 C

10
o

-55 C

*Notes:
1. 250s Pulse Test

*Notes:
1. VDS = 10V
2. 250s Pulse Test

10
0.1

2. TC = 25 C

1
VDS, Drain-Source Voltage[V]

10

Figure 3. On-Resistance Variation vs.


Drain Current and Gate Voltage

3
4
5
VGS, Gate-Source Voltage[V]

500

IS, Reverse Drain Current [A]

12

10
VGS = 10V

8
VGS = 20V

100
o

175 C

10

*Notes:
1. VGS = 0V

*Note: TC = 25 C

100
200
300
ID, Drain Current [A]

1
0.0

400

Figure 5. Capacitance Characteristics

25 C

Figure 4. Body Diode Forward Voltage


Variation vs. Source Current
and Temperature

14

RDS(ON) [m],
Drain-Source On-Resistance

2. 250s Pulse Test

0.5
1.0
VSD, Body Diode Forward Voltage [V]

1.5

Figure 6. Gate Charge Characteristics


10

10000
VGS, Gate-Source Voltage [V]

Ciss

Capacitances [pF]

Coss

1000
Crss

100

*Note:
1. VGS = 0V
2. f = 1MHz

50
0.1

Ciss = Cgs + Cgd (Cds = shorted)


Coss = Cds + Cgd
Crss = Cgd

1
10
VDS, Drain-Source Voltage [V]

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

30

VDS = 30V
VDS = 75V
VDS = 120V

*Note: ID = 75A

14
28
42
56
Qg, Total Gate Charge [nC]

70

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation


vs. Temperature

Figure 8. On-Resistance Variation


vs. Temperature
3.0

1.05

1.00

0.95
*Notes:
1. VGS = 0V
2. ID = 250A

0.90
-100

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

RDS(on), [Normalized]
Drain-Source On-Resistance

BVDSS, [Normalized]
Drain-Source Breakdown Voltage

1.10

1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A

0.5

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

200

Figure 10. Maximum Drain Current


vs. Case Temperature

1000

120
100

100

10s

10

100s

ID, Drain Current [A]

ID, Drain Current [A]

2.0

0.0
-100

200

Figure 9. Maximum Safe Operating Area

2.5

1ms

Operation in This Area


is Limited by R DS(on)

10ms

SINGLE PULSE

DC

0.1

TC = 25 C

80
VGS = 10V

60
40
20

TJ = 175 C
o

0.01
0.1

RJC = 0.51 C/W

1
10
100
VDS, Drain-Source Voltage [V]

0
25

300

RJC= 0.51 C/W

50
75
100
125
150
o
TC, Case Temperature [ C]

175

Figure 11. Unclamped Inductive Switching


Capability

IAS, AVALANCHE CURRENT (A)

300

If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

100

STARTING TJ = 25 C

10

STARTING TJ = 150 C

1
0.001

0.01

0.1

10

100

1000

tAV, TIME IN AVALANCHE (ms)

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Typical Performance Characteristics (Continued)

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Typical Performance Characteristics

Figure 12. Transient Thermal Response Curve

Thermal Response [ZJC]

1
0.5

0.1

0.2
0.1

PDM

0.05

0.01

t1

0.02
0.01

*Notes:

Single pulse

1E-3
-5
10

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

t2
o

1. ZJC(t) = 0.51 C/W Max.


2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4

10

-3

-2

10
10
Rectangular Pulse Duration [sec]

-1

10

10

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width


D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VDD

VSD

Body Diode
Forward Voltage Drop

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Mechanical Dimensions

TO-220

(F102: Trimmed Leads)

Dimensions in Millimeters

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.


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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:


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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2.

A critical component in any component of a life support, device, or


system whose failure to perform can be reasonably expected to cause
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative / In Design

Datasheet contains the design specifications for product development. Specifications


may change in any manner without notice.

Preliminary

First Production

Datasheet contains preliminary data; supplementary data will be published at a later


date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed

Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to


make changes at any time without notice to improve the design.

Obsolete

Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild


Semiconductor. The datasheet is for reference information only.
Rev. I64

2011 Fairchild Semiconductor Corporation


FDP083N15A_F102 Rev. C1

www.fairchildsemi.com

FDP083N15A_F102 N-Channel PowerTrench MOSFET

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