Академический Документы
Профессиональный Документы
Культура Документы
7/15/2015
Agenda
Agenda
Why Wideband?
Narrowband vs Wideband
Q&A
www.analog.com/RF
Why Wideband?
Different frequency bands are allocated for telecommunication standards that address similar applications
PtP Telecommunication Infrastructure Backhaul bands.
Optical communication data rate can reach 56+ Gbps, which requires 28+ GHz BW
www.analog.com/RF
www.analog.com/RF
www.analog.com/RF
Narrowband vs Wideband
Narrowband
Narrowband vs Wideband
Wideband
A wideband amplifier covers all frequency bands
Or Multiple wideband amplifiers for ultra WB but still less part count
www.analog.com/RF
www.analog.com/RF
Selected ADI
LNAs
www.analog.com/RF
10
Drivers
PAs
www.analog.com/RF
11
www.analog.com/RF
12
Frequency
Wideband to cover 1 wide application band or more than 1 narrow application bands
www.analog.com/RF
13
www.analog.com/RF
14
www.analog.com/RF
15
www.analog.com/RF
16
IP3
OIP3(dBm) = IIP3(dBm) + Gain(dB)
www.analog.com/RF
17
Since LNA is the 1st gain element in a receiver system, its noise contribution is critical
PA`s are usually at the end of the signal chain; hence negligible noise contribution
Some customers can ask about NF info for PAs. Synthesizer systems etc.
www.analog.com/RF
18
www.analog.com/RF
19
www.analog.com/RF
20
www.analog.com/RF
21
GaAs currently dominates wideband amplifier market; but this can change
www.analog.com/RF
22
www.analog.com/RF
23
ECCN: 3A001.b.2.c
www.analog.com/RF
24
www.analog.com/RF
25
LDMOS FETs and GaAs MESFETs typically exhibit gains identical to their small signal gains over most of their drive
range.
When producing the rated output power, the gain typically drops by 1dB. This is called the P1dB output power. Output
power will saturate at a power approximately 1dB greater than P1dB, while the gain will have typically decreased by 3dB
compared to the small signal gain.
Where, GaN HEMTs driven even 10dB below their rated output power will exhibit a decrease in gain compared to the
small signal gain.
Which results in a lower value for P1dB than the rated power might indicate.
GaN HEMT output powers are therefore usually specified where the gain drops by 3dB or P3dB.
www.analog.com/RF
26
www.analog.com/RF
27
www.analog.com/RF
28
www.analog.com/RF
29
www.analog.com/RF
30
Operating Temperature
Channel Temperature
GaN 225 C
MTTF
Thermal Resistance
Tr * Pdiss + Ta = Tj
4.24 * 33 + 85 = 224.92 C
www.analog.com/RF
31
Different frequency bands can have different requirements defined by industry standards
Output Power
ACPR, IP3
Different
Active
www.analog.com/RF
32
Different
designs
33
HMC637ALP5
HMC907
www.analog.com/RF
34
www.analog.com/RF
35
FAQ on
``Hittite Microwave RF/MW Amplifiers from ADI``
https://ez.analog.com/docs/DOC-11963
www.analog.com/RF
36
+
Why not a simple resistive divider for Vgg?
Part to Part variations due to process
Temperature variations
www.analog.com/RF
37
www.analog.com/RF
38
www.analog.com/RF
39
www.analog.com/RF
40
www.analog.com/RF
41
www.analog.com/RF
42
www.analog.com/RF
43
Summary
Topics
we have covered.
Why Wideband?
Narrowband vs Wideband
www.analog.com/RF
44
Links
Visit
FAQ on RF/MW Amplifiers at
https://ez.analog.com/docs/DOC-11963
www.analog.com/RF
45
www.analog.com/RF
46