Академический Документы
Профессиональный Документы
Культура Документы
3CT12A
GENERAL DESCRIPTION
Symbol
Unit
ITAV
12(Tmb103=180
half sine wave)
ITRMS
18
ITSM
150
VDRM
V
400;500;600
VRRM
PGM
20f50Hz,10
PGAV
0.5
VRGM
Tvj
125
Tstg
-40150
2004.02
1/5
3CT12A
ELECTRICAL CHARACTERISTICS (Tc=25)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
IRRM
VRM=VRRM,Tj=125
1.0
mA
IDRM
VDM=VDRM,Tj=125
1.0
VTM
ITM=40A
1.45
2.2
VDM=12V,IT=0.1A
3.5
15
mA
VGT
VDM=12V,IT=0.1A
0.7
1.5
dV/dt
VDM=2/3VDRM,Tj=125,
gate open
50
200
V/S
IH
VDM=12V,IT=0.1A
20
mA
Test condition
MIN
TYP
MAX
Unit
Rth(j-c)
Junction to case
1.3
/W
Rth(j-a)
Junction to ambient
60
/W
or Reverse Blocking
Current
IGT
THERMAL RESISTANCES
Parameter
Thermal resistances
2004.02
Symbol
2/5
3CT12A
On-state
2004.02
3/5
3CT12A
1 Kcathode
2 Aanode
3 Ggate
mm
2004.02
4/5
3CT12A
NOTES
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales
agent , thus, for customers, when ordering , please check with our company.
2. We strongly recommend customers check carefully on the trademark when buying our
product, if there is any question, please dont be hesitate to contact us.
3. Please do not exceed the absolute maximum ratings of the device when circuit
designing.
4. Please do not exceed the absolute maximum ratings of the device when circuit
designing.
5. Jilin Sino-microelectronics co, Ltd reserves the right to make changes in this
specification sheet and is subject to change without prior notice.
CONTACT
2004.02
5/5