Академический Документы
Профессиональный Документы
Культура Документы
November 12 - 2012
External Use
Agenda
Maydan Technology Center (MTC) introduction
MTC collaboration concept
PDC tools in MTC
PDC core technology
External Use
MTC
IMEC
External Use
SEMVision
VeritySEM
CD SEM
DFinder
UVision
Bright Field
inspection
Defect Review
SEM
External Use
Dark Field
inspection
External Use
Improved
topography
Bottom imaging
for HAR
Benefits
Robust ADR on all layers &
defects
Fully automated recipe creation
Advanced material analysis
Industry best root cause
Meaningful information for
analysis
defect root cause analysis
6
External Use
Case Study:
DUV inspection and defect origin analysis for 22nm self-aligned double-pattering
Kfir Dotan; Ofir Montal, SST July 2010
External Use
Hard mask
Dielectric
External Use
Core
lithography
APF1 etch
Spacer open
Spacer
deposition
Core lithography
DUV inspection
APF1 etch
DUV inspection
SEM review
Spacer deposition
DUV inspection
SEM review
Defect library
Spacer open
DUV inspection
SEM review
Defect library
SEM review
Defect library
Defect library
Defects
tracing
SEM review
SEM review
SEM review
Defect evolution
gallery
Defect evolution
gallery
Defect evolution
gallery
External Use
AMAT source
Embedded
foreign material
Core Resist
Spacer Open
Hard mask
External Use
APF1 Etch
Spacer Dep
Spacer Open
AMAT source
Material contrast
Topography
AMAT source
Core
lithography
11
Spacer
deposition
APF1 etch
External Use
Spacer open
AMAT source
Core Resist
AMAT source
Spacer Open
Hard mask
External Use
APF1 Etch
Spacer Dep
Spacer Open
AMAT source
Material contrast
Topography
AMAT source
Core
lithography
13
Spacer
deposition
APF1 etch
External Use
Spacer open
External Use
Case Study:
EUV Defect Characterization
w/ Globalfoundries
AMAT source
22nm Node
AMAT source
Litho
AMAT source
22nm Node
FOV = 0.4um
AMAT source
FOV = 1um
AMAT source
After Etch
AMAT source
FOV = 0.45um
External Use
PR
Si Barc
Organic spin-on
Litho
Nitride
Thermal Oxide
FOV = 1um
Si
Full bridge
AMAT source
After Etch
Ni
Ox
FOV = 1um
17
Si
External Use
AMAT source
AMAT source
AMAT source
Post Etch
External Use
Wafers stack
Resist process
Improve resist formulation
Track process
External Use
Case Study:
EUV Resist Defectivity
Characterization
w/ imec
External Use
Resist C 50nm
Resist D 50nm
Resist A 65nm
Silicon
Silicon
Silicon
Silicon
Reticle layout
Silicon
Resist B 50nm
Silicon
Resist C 50nm
Silicon
Wafer layout
Full field EUV exposures: ASML EUV Alpha Demo Tool (ADT) at imec
Inspection: DUV laser based BF inspector: UVision3
Review SEMVision G4; CD Measurements: VeritySEM 4i
21
External Use
Defectivity Comparison
Defect Density < 1 defect/cm2 for 3 out of 4 resists, for optimal exposure
conditions
No significant difference with and without underlayer BARC
Results indicate on defectivity readiness of EUV resists B, C, D for
NXE:3100
area with increased LER
18.4 49.6
181.6
4.5
4
3.5
3
2.5
2
1.5
4.5
3.4
1
0.5
1.6
0.4
1.3
1.0 1.0
0.2 0.8
0.5
0.5
resist C no UL
External Use
resist B no UL
resist A no UL
resist D with UL
resist C with UL
resist B with UL
22
resist A with UL
External Use
Ongoing Discoveries
External Use
25
EUV Lithography
EUV + SADP
Advance pattern
BEOL and FEOL
development
External Use
Summary
Maydan Technology Center (MTC) collaboration concept
have unique engagement capability as it combine state of
the art knowledge and tools
Applied Materials build in MTC advanced metrology
infrastructure and procedure that can :
Analyze sub 20 nm defects and provide fast learning
cycle
Quantify sub 20 nm defects
Advance patterned projects and defectivity improvement
are taking place in MTC that involved leading technology &
partner
26
External Use