INTERPRETATION OF RESULTS

Experiment 8 is about The Bipolar Junction Transistor. We performed

the experiment to identify the terminals of a bipolar junction using a DMM
and examine the dc characteristics of a bipolar junction and define the
relationship between the collector current and the base current.
In the first part, we measured the voltages using the Digital
Multimeter through the use of diode test in the Transistor Junction circuit
block. The results then tell that the transistors are in good condition
since for the NPN transistor, when the base-emitter and base-collector
are forward-biased, a voltage reading is obtained. For PNP transistors,
the terminals were opposite, to have a voltage reading. It was also observed
that the forward bias condition of base-emitter voltage is higher than the
forward bias condition of base-collector voltage for the NPN transistor.
Bipolar junction transistors act like ordinary rectifier diodes, so the voltage
across the base and the emitter of a transistor when it is in forward biased
condition is approximately equal to the barrier voltage.
In the second part, the Transistor Load Lines and Gain circuit block are
connected. By performing self calibration on the oscilloscope, we were able
to display the IV characteristic of the transistor. The graph shows two
horizontal lines.
And on the last part, the circuit in part B was used again. The positive
variable supply Vcc was adjusted to 10 Vdc. The R2 was also adjusted to its
maximum CCW position and we had measured the collector-emitter voltage
at about 10.02V and Ic is equal to 0A. When the R 2 was adjusted to
maxuimum CW position, collector-emitter voltage is measure at about
0.121V and Ic is equal to 0.0984A. The two points makes a straight line and
its midpoint serves as the quiescent point of operation, after that, the
relationship between the collector current and the base current were
defined. Same circuit was used and the variable supply was adjusted to 5
Vdc. Values for the base current, I b, where computed on this part. Based on
our results, base current had the greater effect on the collector current

CONCLUSION

We are able to meet all the objectives in the experiment. And we

are also able to study and understand that a bipolar Junction Transistor is a
three terminal (base, emitter and collector) semiconductor device used
to amplify by transferring a current I from a low- to a high- resistance
circuit. Both electrons and holes participate in the conduction. BJT consists
of three layers of materials, namely, emitter, base and collector. The emitter
is the region where carriers come from and it is heavily doped. The collector
is the region where carriers go to and it is moderately doped. And the base
is the region that controls the carriers coming from the emitter going to the
base and it is lightly doped.
We also found out that there are two types of transistor are PNP (two p
regions separated by n region and NPN (two n regions separated by a p
region). A DMM can be used to test transistor junctions in the same way it is
used to test a diode junction.
In an NPN transistor, the base should be placed on the positive meter
lead of the DMM in order to conduct. Meanwhile, in a PNP transistor, the base
should be placed on the negative meter lead in order to conduct. In the case
of the collector-emitter terminals, no conduction should be observed
regardless of the meter probe connections and the transistor type.
We also studied and concluded that the Base current has a greater
effect on collector current than collector voltage because for every
increase/decrease in the base current corresponds to a proportional
increase/decrease in the collector current while the increase in the collector
voltage does not affect the collector current significantly.