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Vishay Siliconix
FEATURES
BENEFITS
APPLICATIONS
Data acquisition systems
Audio and video signal routing
ATE systems
Medical instrumentation
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
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Vishay Siliconix
DG508B
Dual-In-Line
SOIC and TSSOP
16
A1
A0
16
A1
15
A2
EN
15
GND
14
GND
V-
14
V+
S1
13
V+
S1a
13
S1b
S2
12
S5
S2a
12
S2b
S3
11
S6
S3a
11
S3b
S4
10
S7
S4a
10
S4b
S8
Da
Db
A0
EN
V-
Decoders/Drivers
Decoders/Drivers
Top view
Top view
DG508B
miniQFN-16L
GND
12
V+
11
S5
10
DG509B
miniQFN-16L
A2 13
A1 14
Decoders/
Drivers 6XX
A0 15
V+
12
S6
9
EN 16
1
V-
S1
S2
S3
8 S7
GND 13
7 S8
A1 14
6 D
A0 15
5 S4
EN 16
S1B
11
S3B
9
S2B
10
8 S4B
7 DB
Decoders/
Drivers 7XX
6 DA
5 S4A
V-
S1A
S2A
S3A
Top View
Device Marking: 6XX
Traceability Code:
6 is DG508BEN
XX = Date/Lot
A2
A1
A0
EN
ON SWITCH
A1
A0
EN
ON SWITCH
None
None
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
www.vishay.com
Vishay Siliconix
-40 C to +125 C a
PACKAGE
PART NUMBER
TEMP. RANGE
PACKAGE
PART NUMBER
16-Pin SOIC
DG508BEY-T1-E3
16-Pin SOIC
DG509BEY-T1-E3
16-Pin TSSOP
DG508BEQ-T1-E3
16-Pin TSSOP
DG509BEQ-T1-E3
16-Pin PDIP
DG508BEJ-E3
16-Pin PDIP
DG509BEJ-E3
16-Pin MiniQFN
DG508BEN-T1-GE4
16-Pin MiniQFN
DG509BEN-T1-GE4
-40 C to +125 C a
Note
a. -40 C to +85 C datasheet limits apply.
LIMIT
V+
44
GND
25
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
30
100
Storage Temperature
16-Pin TSSOP d
16-Pin PDIP
-65 to +150
450
16-Pin miniQFN f
525
125
16-Pin TSSOP
16-Pin PDIP
16-Pin miniQFN f
mA
C
600
510
UNIT
178
159.6
mW
C/W
152
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8 mW/C above 70 C.
d. Derate 5.6 mW/C above 70 C.
e. Derate 6.3 mW/C above 70 C.
f. Derate 6.6 mW/C above 70 C.
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 15 V, V- = -15 V ( 10 %)
VAX, VEN = 2 V, 0.8 V a
TEMP. b TYP. c
-40 C to +125 C
-40 C to +85 C
MIN. d
MAX. d
MIN. d
MAX. d
UNIT
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
RDS(on) Matching
Source Off Leakage
Current
VANALOG
RDS(on)
VD = 10 V, IS = -1 mA
RDS(on)
VD = 10 V
IS(off)
ID(off)
VD = 10 V
VS =
+ 10 V
VEN = 0 V
DG508B
DG509B
ID(on)
10 V
VS = VD = +
sequence each
switch on
DG508B
DG509B
Full
-15
15
-15
15
Room
180
380
380
Full
480
450
Room
10
Room
-1
-1
Full
-50
50
-50
50
Room
-1
-1
Full
-100
100
-100
100
Room
-1
-1
Full
-50
50
-50
50
Room
-1
-1
Full
-100
100
-100
100
Room
-1
-1
Full
-50
50
-50
50
nA
Digital Control
Logic High Input Voltage
VINH
Full
VINL
Full
0.8
0.8
IIH
VAX, VEN = 2 V
Full
-1
-1
IIL
Full
-1
-1
CIN
f = 1 MHz
Room
145
300
300
tTRANS
Room
Transition Time
Full
400
400
Break-Before-Make
Interval
tOPEN
Room
37
15
15
Full
tON(EN)
Room
100
250
250
340
V
A
pF
Dynamic Characteristics
tOFF(EN)
Charge Injection e
QINJ
Off Isolation e
OIRR
Crosstalk e
XTALK
Full
340
Room
90
240
240
Full
300
300
Full
Room
-81
Room
-88
ns
pC
dB
BW
RL = 50
Room
250
MHz
Total Harmonic
Distortion e
THD
RL = 10 k, 5 Vrms
f = 20 Hz to 20 kHz
Room
0.04
CS(off)
-3 dB Bandwidth e
CD(off)
Drain On Capacitance e
CD(on)
f = 1 MHz
Room
DG508B
Room
13
DG509B
Room
DG508B
Room
18
DG509B
Room
11
Room
0.01
0.2
0.2
Full
0.3
0.3
Full
0.06
-10
-10
pF
Power Supply
Positive Supply Current
I+
I-
S14-2382-Rev. E, 15-Dec-14
mA
A
DG508B, DG509B
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Vishay Siliconix
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V ( 10 %)
VAX, VEN = 2 V, 0.8 V a
TYP. c
MIN. d
MAX. d
MIN. d MAX. d
UNIT
Analog Switch
Analog Signal Range e
On-Resistance
RDS(on) Matching
VANALOG
RDS(on)
VD = 10 V/0 V, IS = 1 mA
RDS(on)
IS(off)
ID(off)
V+ = 12 V, V- = 0 V
VD = 0 V/10 V,
VS = 10 V/0 V
ID(off)
DG508B
DG509B
DG508B
Channel On Leakage
Current
ID(on)
V+ = 12 V, V- = 0 V
VS = VD = 0 V/10 V
DG509B
Full
12
12
Room
265
500
500
Full
650
600
Room
10
Room
-1
-1
1
50
Full
-50
-50
-50
Room
-1
-1
Full
-100
100
-100
100
Room
-1
-1
Full
-50
50
-50
50
Room
-1
-1
Full
-100
100
-100
100
Room
-1
-1
Full
-50
50
-50
50
nA
nA
Digital Control
Logic High Input Voltage
VINH
Full
VINL
Full
0.8
0.8
IIH
VAX, VEN = 2 V
Full
-1
-1
IIL
Full
-1
-1
CIN
f = 1 MHz
Room
Transition Time
tTRANS
Room
165
400
400
Full
550
500
Break-Before-Make
Interval
tOPEN
Room
37
15
15
V
A
pF
Dynamic Characteristics
tON(EN)
VS1 = 5 V, VS2 to VS8 = 0 V,
RL = 1 k, CL = 35 pF
tOFF(EN)
Full
Room
125
300
300
Full
550
425
Room
75
250
250
Full
350
300
ns
QINJ
Full
2.5
OIRR
CL = 5 pF, RL = 50
f = 1 MHz
Room
-80
XTALK
Room
-88
-3 dB Bandwidth e
BW
RL = 50
Room
200
MHz
THD
RL = 10 k, 5 VRMS,
f = 20 Hz to 20 kHz
Room
0.26
CS(off)
CD(off)
13
DG508B
17
DG509B
12
Charge Injection e
Off
Isolation e
Crosstalk e
Channel On Capacitance e
S14-2382-Rev. E, 15-Dec-14
CD(on)
DG508B
f = 1 MHz
DG509B
Room
pC
dB
pF
DG508B, DG509B
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Vishay Siliconix
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V ( 10 %)
VAX, VEN = 2 V, 0.8 V a
I+
TYP. c
Room
Full
MIN. d
MAX. d
MIN. d MAX. d
0.01
0.2
0.2
0.3
0.3
UNIT
Power Supply
Positive Supply Current
mA
Notes
a. VAX, VEN = input voltage perform proper function.
b. Room = 25 C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. RDS(on) = RDS(on) max. - RDS(on) min.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
V+
GND
VREF
D
A0
AX
Level
Shift
Decode/
Drive
V+
V-
S1
EN
Sn
V-
Fig. 1
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
www.vishay.com
Vishay Siliconix
400
T = 25 C
IS = 1 mA
375
V = + 10.8 V
325
RON - On-Resistance ()
RON - On-Resistance ()
350
300
V = + 12.0 V
375
250
V = + 20.0 V
225
200
V = + 36.0 V
175
T = 25 C
IS = 1 mA
350
150
V = 5.0 V
V = 10.8 V
300
V = 13.5 V
V = 15 V
V = 20 V
250
200
150
100
125
50
- 20 - 16 - 12
100
0
12
16
20
24
28
32
36
-4
12
16
20
500
550
V = + 10.8 V
IS = 1 mA
+ 125 C
+ 85 C
+ 25 C
- 40 C
450
450
+ 125 C
RON - On-Resistance ()
500
RON - On-Resistance ()
-8
400
350
300
250
200
400
350
+ 85 C
300
+ 25 C
250
200
- 40 C
V = + 12 V
IS = 1 mA
150
150
100
100
0
10 11 12
10 11 12
300
400
V = + 36 V
IS = 1 mA
V = + 20 V
IS = 1 mA
350
RON - On-Resistance ()
RON - On-Resistance ()
250
300
+ 125 C
250
+ 85 C
200
+ 25 C
150
- 40 C
200
+ 125 C
150
+ 85 C
+ 25 C
100
100
- 40 C
50
50
0
10
12
14
16
18
20
12
16
20
24
28
32
36
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
www.vishay.com
Vishay Siliconix
400
V=5V
IS = 1 mA
600
500
RON - On-Resistance ()
550
RON - On-Resistance ()
V = 10.8 V
IS = 1 mA
350
+ 125 C
450
400
350
+ 85 C
300
+ 25 C
250
200
300
+ 125 C
250
200
+ 85 C
150
+ 25 C
100
- 40 C
- 40 C
150
100
-5
-4
-3
-2
-1
50
- 11 - 9
-5
-3
-1
11
350
V = 13.5 V
IS = 1 mA
V = 15.0 V
IS = 1 mA
300
RON - On-Resistance ()
300
250
+ 125 C
200
+ 85 C
150
+ 25 C
100
250
+ 125 C
200
+ 85 C
150
+ 25 C
100
- 40 C
50
- 14
- 10
-6
-2
- 40 C
2
10
50
- 15
14
-9
-3
15
1.8
350
+ 125 C
+ 85 C
+ 25 C
- 40 C
V = 20 V
IS = 1 mA
1.7
1.6
VT - Switching Threshold (V)
300
RON - On-Resistance ()
350
RON - On-Resistance ()
-7
250
200
150
100
1.5
VIH
1.4
1.3
VIL
1.2
1.1
1.0
0.9
50
- 20 - 16 - 12
-8
-4
12
16
20
0.8
5
9 10 11 12 13 14 15 16 17 18 19 20
Supply Voltage (V)
DG508B, DG509B
www.vishay.com
Vishay Siliconix
10
RL = 10 k
VSignal = 5 VRMS
10 mA
THD (%)
V = + 12 V
0.1
V = 15 V
V = 15.0 V
1 mA
100 A
V = + 12.0 V
0.01
10 A
1 A
0
10
100
1000
Frequency (Hz)
10 000
100 000
10
100
1K
10K
100K
1M
10M
1000
10 000
V = +36
V+/- = +/-15V
100
85 C
125 C
25 C
1000
-40 C
125 C
100
85 C
25 C
10
-40 C
10
0.0
6.0
12.0
18.0
24.0
30.0
1
0.0
36.0
6.0
9.0
VAX, VEN - (V)
10
- 10
V+ = 12 V
RL = 50
- 30
- 40
OIRR
- 50
- 60
XTalk
- 70
15.0
Loss
- 10
- 20
- 30
Loss
V = 15 V
RL = 50
- 40
OIRR
- 50
- 60
- 70
- 80
- 80
- 90
- 90
- 100
100K
12.0
10
- 20
3.0
1M
10M
100M 200M
Frequency (Hz)
- 100
100K
XTalk
1M
10M
100M
300M
Frequency (Hz)
DG508B, DG509B
www.vishay.com
Vishay Siliconix
100 mA
10
QINJ - Charge Injection (pF)
10 mA
1 mA
V = 15.0 V
100 A
10 A
V = + 12.0 V
1 A
100 nA
8
6
4
2
0
V = + 12 V
CL = 1 nF
-2
-4
-6
-8
10 nA
V = 15 V
CL = 1 nF
- 10
1 nA
10
100
1K
10K
100K
1M
- 12
- 15 - 12
10M
-3
12
15
8
V = 15.0 V
I D(ON)
Leakage Current (pA)
104
Leakage Current (pA)
-6
105
103
102
101
-9
I D(OFF)
V = 15 V
T = 25 C
ID(ON)
2
0
-2
IS(OFF)
ID(OFF)
-4
100
-6
I S(OFF)
10-1
- 60 - 40 - 20
-8
0
20
40 60
80
Temperature (C)
S14-2382-Rev. E, 15-Dec-14
- 15
- 10
-5
0
5
Analog Voltage (V)
10
15
DG508B, DG509B
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Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
A2
S1
A1
50
10 V
S2 - S7
A0
S8
DG508B
EN
10 V
VO
D
GND
+ 2.0 V
V-
Logic
Input
50 %
0V
35 pF
1 M
tr < 20 ns
tf < 20 ns
3V
- 15 V
VS1
90 %
Switch
Output
+ 15 V
VO
0V
V+
A1
10 V
S1b
A0
90 %
VS8
S1a - S4a, Da
50
DG509B S4b
S1 ON
GND
S8 ON
VO
Db
EN
+ 2.0 V
tTRANS
tTRANS
10 V
V35 pF
1 M
- 15 V
V+
S1
5V
EN
S2 - S8
A0
DG508B
A1
A2
GND
VO
V-
50
Logic
Input
50 %
0V
35 pF
1k
tr < 20 ns
tf < 20 ns
3V
tON(EN)
- 15 V
tOFF(EN)
0V
+ 15 V
Switch
Output
VO
V+
S1b
90 %
5V
VO
EN
A0
A1
GND
10 %
S1a - S4a, Da
S2b - S4b
DG509B
Db
V-
50
1k
VO
35 pF
- 15 V
S14-2382-Rev. E, 15-Dec-14
DG508B, DG509B
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Vishay Siliconix
TEST CIRCUITS
+ 15 V
+ 2.4 V
V+
EN
All S and Da
tr < 20 ns
tf < 20 ns
3V
Logic
Input
50 %
+5V
0V
A0
DG508B
DG509B
A1
A2
GND
Db, D
VO
VO
V-
80 %
Switch
Output
50
35 pF
1 k
- 15 V
VO
tOPEN
0V
+ 15 V
Rg
V+
SX
Logic
Input
EN
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
A1
CL
1 nF
A2
GND
VO
Switch
Output
V-
QINJ = CL x
VO
+ 15 V
+ 15 V
VIN
V+
SX
VS
Rg = 50
VS
V+
S1
Rg = 50
S8
A0
VO
A1
A2
GND
EN
V-
RL
50
A0
VO
A1
A2
GND
EN
V-
RL
50
- 15 V
Off Isolation = 20 log
VOUT
VIN
S14-2382-Rev. E, 15-Dec-14
- 15 V
Insertion Loss = 20 log
VOUT
VIN
DG508B, DG509B
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Vishay Siliconix
TEST CIRCUITS
+ 15 V
+ 15 V
VIN
VS
V+
S1
SX
V+
S8
A0
Rg = 50
A2
Channel
Select
GND
EN
V-
RL
50
Crosstalk = 20 log
VOUT
S8
A1
A0
D
GND
- 15 V
Meter
A2
VO
A1
S1
EN
V-
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
- 15 V
VIN
Fig. 8 - Crosstalk
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64821.
S14-2382-Rev. E, 15-Dec-14
Package Information
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Vishay Siliconix
B
12
0.10 C
A
11
10
10
11
0.10 M C A B
0.05 M C
12
13
13
14
14
15
E
15
16
1
16
4
15 x L
0.10 C
Top view
L1
Bottom view
0.10 C
C
A
Seating
plane
0.10 C
A3
Side view
DIMENSIONS
MILLIMETERS (1)
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.50
0.55
0.60
0.020
0.022
0.024
A1
0.05
0.002
A3
0.15 ref.
0.15
2.50
0.006 ref.
0.20
0.25
0.006
2.60
2.70
0.098
0.40 BSC
1.70
1.80
0.008
0.010
0.102
0.106
0.016 BSC
1.90
0.067
0.071
0.075
0.35
0.40
0.45
0.014
0.016
0.018
L1
0.45
0.50
0.55
0.018
0.020
0.022
N (3)
16
16
Nd (3)
(3)
Ne
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
Revision: 09-May-16
Package Information
Vishay Siliconix
SOIC (NARROW):
16LEAD
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
9
E
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
C
All Leads
e
A1
0.101 mm
0.004 IN
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Package Information
Vishay Siliconix
PDIP: 16LEAD
16
15
14
13
12
11
10
9
E
E1
1
D
S
Q1
A1
15
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
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Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
1.10
1.20
A1
0.05
0.10
0.15
A2
1.00
1.05
0.38
0.22
0.28
0.127
4.90
5.00
5.10
6.10
6.40
6.70
E1
4.30
4.40
4.50
0.65
0.50
0.60
0.70
L1
0.90
1.00
1.10
0.10
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1
PAD Pattern
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Vishay Siliconix
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Revision: 02-Sep-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
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APPLICATION NOTE
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24
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customers responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16