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Application &Sales
.
'.
Information ' ,.'
Call
'
Joseph Masarich
Sales Representative
HEWLETT PACKARD
..
NEELY
"Sales Region
3003 scon BLVD.
SANTA CLARA, CA 95050
(408) 988-7234
Microwave Semiconductor
Diode and Transistor
Designers Catalog
1984-85
(/
Table of Contents
Ordering Information
Alphanumeric Index
High Reliability
.............................
.............................
Vll
Vlll
................................... 1
113
309
A Brief Sketch
Hewlett-Packard is one of the world's
leading designers and manufacturers of
electronic, medical, analytical, and
computing instruments and systems,
diodes, transistors, integrated products,
and optoelectronic products. Since its
founding in Palo Alto, California, in
1939, HP has done its best to offer only
products that represent significant
technological advancements.
iv
RF and Microwave
Semiconductors
(,
"\
Also included in each section where possible are the equivalent circuits of each
product. These will be of use in the
computer-aided design circuits.
vi
(j
Ordering Information,
After Sales Services
How To Order
Certification
Warranty
As an expression of confidence in our
products to continue meeting the high
standards of reliability and performance
that customers have come to expect,
Hewlett-Packard Microwave Semiconductor Products carry the following
warranty.
Service
We firmly believe that our obligation to
you as a customer goes much beyond just
the delivery of your new HP product.
This philosophy is implemented by
Hewlett-Packard in two basic ways: (1) by
designing and building excellent products
with good serviceability, and (2) by backing up those products with a customer
service program which can respond to
your needs with speed and completeness.
EXCLUSIVE REMEDIES
THE REMEDIES PROVIDED
HEREIN ARE BUYER'S SOLE AND
EXCLUSIVE REMEDIES. HP SHALL
NOT BE LIABLE FOR ANY DIRECT,
INDIRECT, SPECIAL, INCIDENTAL,
OR CONSEQUENTIAL DAMAGES,
WHETHER BASED ON CONTRACT
TORT OR ANY OTHER LEGAL
THEORY.
vii
ALPHANUMERIC INDEX
.GENERIC
CHIP
PAGE
NO.
MODEL NO.
DESCRIPTION
HPND-4001
HPND-4005
HPND-4050
HPND-4165
HPND-4166
HSCH-oS12
HSCH-oS13
HSCH-oS14
HSCH-oS15
HSCH-oS16
HSCH-1001
HSCH-1111
HSCH-3206
HSCH-3207
HSCH-3486
141
170
161
161
161
HSCH-5310
HSCH-5311
HSCH-5312
HSCH-5313
HSCH-5314
127
127
127
127
127
HSCH-5315
HSCH-5316
HSCH-5317
HSCH-5318
HSCH-5319
127
127
127
127
127
HSCH-5330
HSCH-5331
HSCH-5332
HSCH-5333
HSCH-5334
127
127
127
127
127
HSCH-5335
HSCH-5336
HSCH-5337
HSCH-5338
HSCH-5339
HSCH-5510
HSCH-5511
HSCH-5530
HSCH-5531
HXTR-2001
HXTR-2101
HXTR-2102
HXTR-3001
HXTR-3002
HXTR-3101
HXTR-3102
HXTR-3103
HXTR-3104
H~TR-3615
HXTR-3645
viii
HXTR-3002
HXTR-3001
HXTR-3002
HXTR-7011
HXTR-7011
133
133
133
133
32
56
58
61
63
66
GENERIC
CHIP
PAGE
NO.
MODEL NO.
DESCRIPTION
HXTR-3675
HXTR-4101
HXTR-5001
HXTR-5002
HXTR-5101
69
72
38
41
74
HXTR-5102
HXTR-5103
HXTR-5104
HXTR-6001
HXTR-6101
77
80
83
44
86
HXTR-6102
HXTR-6103
HXTR-6104
HXTR-6105
HXTR-6106
HXTR-7011
HXTR-7111
JAN 1N5711
JAN 1N5712
JAN 1N5719
46
104
178
182
256
JANTX 1 N5711
JANTX 1N5712
JANTX 1N5719
JANTXV 1 N5711
JANTXV 1 N5712
MIL-S-19500/444
MIL-S-19500/445
MIL-S-19500/443
MIL-S-19500/444
MIL-S-19500/445
178
182
256
178
182
TXVB-2810
TXVB-2811
TXVB-2835
TXVB-3001
TXVB-3002
Hi-Rei 5082-2810
Hi-Rei 5082-2811
Hi-Rei 5082-2835
Hi-Rei 5082-3001
Hi-Rei 5082-3002
186
186
189
260
260
TXVB-3039
TXVB-3042
TXVB-3043
TXVB-3077
TXVB-3080
Hi-Rei 5082-3039
Hi-Rei 5082-3042
Hi-Rei 5082-3043
Hi-Rei 5082-3077
Hi-Rei 5082-3080
260
263
263
260
266
TXVB-3141
TXVB-3168
TXVB-3188
TXVB-4001
TXVB-4005
Hi-Rei 5082-3141
Hi-Rei 5082-3168
Hi-Rei 5082-3188
Hi-Rei 5082-4001
Hi-Rei 5082-4005
272
269
269
252
254
TXVB-4050
TXVW-5300 Series
TXVW-5500 Series
1 N5165
1N5166
Hi-Rei 5082-4050
Hi-Rei HSCH-5300 Beam Leads
Hi-Rei HSCH-5500 Beam Leads
Schottky Diode ISee 5082-2301 1
Schottky Diode ISee 5082-23021 .........................................................
252
172
174
141
141
1N5167
1N5711
1N5712
1N5719
1N5767
141
141
141
229
229
1N6263
2N6617
2N6618
2N6679
2N6701
141
86
92
50
74
ix
HXTR-6001
HXTR-6001
HXTR-6001
HXTR-2001
HXTR-2001
.......................
5082-0024
5082-0087
5082-0012
5082-0024
5082-0087
89
92
95
98
101
GENERIC
CHIP
PAGE
NO.
MODEL NO.
DESCRIPTION
2N6741
2N6742
2N6743
2N6838
2N6839
5082-0001
5082-0008
5082-0009
5082-0012
5082-0013
220
292
125
220
125
5082-0015
5082-0017
5082-0018
5082-0020
5082-0021
Step
Step
Step
Step
Step
........................................
............................................
...............................................
...............................................
....................................................
292
292
292
292
292
5082-0023
5082-0024
5082-0025
5082-0029
5082-0030
125
125
220
125
220
5082-0031
5082-0032
5082-0034
5082-0039
5082-0041
5082-0047
5082-0049
5082-0057
5082-0058
5082-0087
220
220
125
125
125
5082-0090
5082-0094
5082-0097
5082-0112
5082-0113
292
125
125
294
294
5082-0114
5082-0132
5082-0151
5082-0153
5082-0180
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
............................................................. ; ....
................................ 5082-0015 ........................
.. . . . . . . . . . . . . . . . . .. .. . . . . . . ... 5082-0018 ........................
.. . .. . . . .. . . . .. . . . . . .. .. . .. .... 5082-0018 ........................
. . . . . . . . . . . . .. . .. . .. . . . . . . . . ... 5082-0032 ........................
294
297
294
294
294
5082-0241
5082-0243
5082-0253
5082-0300
5082-0310
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 5082-0032 ....................
....................................................................
. . . . . . . . . . . . . . . . . . . . . . . . . 5082-0018 ......................
............................ 5082-0017 . ; ...................
. . . . . . . . . . . . . . . . . . . . . 5082-0021 ..... . . . . . . . . . . . . ..
297
297
297
297
297
5082-0320
5082-0335
5082-0800
5082-0803
5082-0805
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0810
5082-0815
5082-0820
5082-0821
5082-0825
Step Recovery
Step Recovery
Step Recovery
Step Recovery
Step Recovery
Diode
Diode
Diode
Diode
Diode
...................................................................
...................................................................
. . . . . . . . . . . . . . . . . . . . . 5082-0090 ................
. . . . . . . . . . . . . . . . . . . . . . . 5082-0090 ...............
. . . . . . . . . . .. . . . . . . . . . .. 5082-0090 ...................
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
Chip
Chip
Chip
Chip
Chip
HXTR-5103
HXTR-e102
HXTR-e104
HXTR-3001
HXTR-3002
...........
......................
...............
.............
.................
80
89
95
58
61
297
294
297
297
294
\.
(~/
MODEL NO.
DESCRIPTION
GENERIC
CHIP
5082-0830
5082-0833
5082-0835
5082-0840
5082-0885
5082-0020
5082-0020
5082-0008
5082-0008
5082-0008
5082-1001
5082-1002
5082-1006
5082-2080
5082-2200
248
248
248
141
146
5082-2201
5082-2202
5082-2203
5082-2207
5082-2208
HSCH-5317
HSCH-5316
HSCH-5317
HSCH-5316
HSCH-5317
146
146
146
146
146
5082-2209
5082-2210
5082-2231
5082-2233
5082-2263
HSCH-5316 ......................
HSCH-5317 ......................
5082-9397 .......................
5082-9397 .......................
5082-9396 .......................
146
146
151
151
151
5082-2271
5082-2272
5082-2273
5082-2274
5082-2277
5082-9395
5082-9395
5082-0029
5082-0029
5082-9394
.......................
.......................
.......................
.......................
.......................
151
151
154
154
151
5082-2279
5082-2280
5082-2291
5082-2292
5082-2294
5082-9397
5082-9399
5082-9696
5082-9696
5082-9698
.......................
.......................
.......................
.......................
.......................
151
151
151
151
151
5082-2295
5082-2296
5082-2297
5082-2298
5082-2301
5082-2302
5082-2303
5082-2305
5082-2306
5082-2308
5082-2350
5082-2351
5082-2356
5082-2370
5082-2396
5082-2400
5082-2401
5082-2520
5082-2521
5082-2565
154
154
154
154
154
5082-2566
5082-2701
5082-2702
5082-2706
5082-2707
154
154
154
154
154
xi
PAGE
NO.
........................
........................
........................
........................
........................
.....................
......................
......................
......................
......................
297
294
297
294
297
141
141
141
141
141
GENERIC
CHIP
PAGE
NO.
MODEL NO.
DESCRIPTION
5082-2711
5082-2712
5082-2713
5082-2714
5082-2723
.......................
.......................
.......................
.......................
.......................
154
154
154
154
154
5082-2724
5082-2750
5082-2751
5082-2755
5082-2765
154
165
165
165
146
5082-2766
5082-2774
5082-2775
5082-2785
5082-2786
146
146
146
146
146
5082-2787
5082-2794
5082-2795
5082-2800
5082-2804
5082-2805
5082-2810
5082-2811
5082-2813
5082-2814
5082-0024 .......................
5082-0087 .......................
5082-0097
5082-0097 .......................
5082-0097 .......................
141
141
141
141
141
5082-2815
5082-2817
5082-2818
5082-2824
5082-2826
5082-0097
5082-0097
5082-0097
5082-0097
5082-0097
.......................
141
154
154
165
141
5082-2830
5082-2831
5082-2835
5082-2836
5082-2837
151
151
141
141
131
5082-2900
5082-2912
5082-2970
5082-2997
5082-3001
141
141
141
141
229
5082-3002
5082-3039
5082-3040
5082-3041
5082-3042
5082-0012
5082-0012
5082-0012
5082-0001
5082-0001
229
229
235
235
229
5082-3043
5082-3046
5082-3071
5082-3077
5082-3080
5082-0001
5082-0049
5082-0001
5082-0012
5082-0025
229
235
233
229
229
5082-3081
5082-0039
5082-0012
5082-0012
5082-0012
5082-0001
229
246
246
240
240
5082-3101
5082-3102
5082-3140
5082-3141
xii
5082-0023
5082-0023
5082-0023
5082-0023
5082-0029
HSCH-5337
HSCH-5336
HSCH-5337
HSCH-5336
HSCH-5337
......................
......................
......................
......................
......................
.......................
MODEL NO.
DESCRIPTION
GENERIC
CHIP
PAGE
NO.
5082-3168
5082-3170
5082-3188
5082-3201
5082-3202
5082-0034
5082-0030
5082-0034
5082-0012
5082-0012
229
240
229
246
246
5082-3303
5082-3304
5082-3305
5082-3306
5082-3340
RF PIN Diode
RF PIN Diode ..................................
High Speed Switch PIN Diode .......................
High Speed Switch PIN Diode ......................
Stripline PIN Diode ................................. .
5082-0030
5082-0030
5082-0001
5082-0001
5082-0030
246
246
244
244
235
5082-3379
5082-3900
5082-9394
5082-9395
5082-9396
229
226
137
137
137
5082-9397
5082-9398
5082-9399
5082-9696
5082-9697
Beam
Beam
Beam
Beam
Beam
137
137
137
137
137
5082-9891
Lead
Lead
Lead
Lead
Lead
Quad
Quad
Quad
Quad
Quad
................................................... : ................. .
xiii
125
HIGH RELIABILITY
Introduction
For over 15 years, MSD has been extensively
ihvolved in many military and space oriented
High Reliability (Hi-Rell Test programs. The
inherent reliability and proven performance of .
our products has provided a vehicle with which
to build a strong record of performance in the
demanding requirements of space programs.
By having a large group of Marketing and
Product Assurance personnel dedicated to the
service of Hi-Rei customers, HP has been
frequently called upon to provide the high
performance, highly reliable components
demanded by many military and commercial
space probe and satellite programs. Among the
many space programs using HP Microwave
Semiconductor Division products are Apollo,
Viking, Intelsat, Space Shuttle,.lndiasat, G-Star,
and Westar.
Reliability Testing
Solderability
Soldering Heat
Moisture Resistance
w'
~
a:
EARLY
FAILURES RANDOM FAILURES AT LOW. CONSTANT FAILURE RATE
USEFUL LIFE PERIOD
- - - OPERATING LIFE
Figure 1.
- - - - - -----------------_.
Terminal Strength
Salt Atmosphere
Salt Spray
.~ ..
Environmental Tests
MIL-STO-7S0
Method
Test Type
Frequency of Testing
1001
Barometric Pressure
Group C (periodic)
1021
Moisture Resistance
Group C (periodic)
1022
Resistance to Solvents
Group B
1026
Group C (periodic)
1027
Group B
1031
Hi-Temp. Non-Op.
Life (A)
1032
Hi-Temp. Non-Op.
Life (LTPD)
1038
Diodes
100% Screen.
1039
Transistors
100% Screen.
1041
Salt Atmosphere
Group C (periodic)
1051
Thermal Shock
(Temperature Cycling)
100% Screen.
1056
Thermal Shock
(Glass Strain)
Group C (periodic)
1071
100% screen.
= 1000 hours.
Group C (periodic)
Mechanical Tests
MIL-STO-7S0
Method
Test Type
Frequency of Testing
2006
Constant Acceleration
100% screen.
2016
Mechanical Shock
Group C (periodic)
2017
In process/Group B
2026
Solderability
Group B
2031
Soldering Heat
Guaranteed by
design.
Terminal Strength
Group C
2036
A, D,E,F
2037
Bond Strength
In process/Group B
2052
PIND (Particallmpact
Noise Detection Test)
100% screen
2056
Vibration Variable
Frequency
Group C (periodic)
2066
Physical Dimensions
Group C (periodic)
2071
Group A
2072
100% screen
2073
Die Visual
100% screen
2074
I nternal Visual
(through glass)
100% screen
2075
Decap Design
Verification
Group B
2076
X-Ray
100% screen
2077
Scanning Electron
Microscope (SEM)
Electrical Tests
Class 3000 and 4000 tests define the acceptable testing methods for semiconductor products.
3. JAN TXV....,..
These are the same level as JAN TX with
the additional requirement of a pre-closure
visual inspection.
,--_ST_A_N_D_A_R_D_P_R_O_D_U_C_T_-",II
Internal V,sual
H.P. Standard V,sual Spec
AQL= 1.0%
Internal Visual
H.P. Standard Visual Spec.
AQL= 1.0%
CUSTOM PROCESSED
PRODUCT
./
TA
= 25C
Subgroup 1, LTPD-15
Solderability, M2026
Resistance to Solvents, M1022
Subgroup 2, LTPD
IIII
= 15
Subgroup 1, LTPD
= 10
= 10
Subgroup 2, LTPD
M1056A
Terminal Strength, M2036A
Fine Leak, M1071 H
Gross Leak, M1 071 Cor E
Electrical Tests
TA = 25'C
=5
Subgroup 3, L TPD
= 10
M2056
Constant Acceleration, M2006
20 KG, XI, VI, Z1
Electrical Tests
(Read and Recordl
Subgroup 4, L TPD - 20
Decap Design Verification
1 Device 0 Failures
Bond Strength, M2037
(LTPD Applied to M20371
Subgroup 5, LTPD
= 10
= 15
Subgroup 4, LTPD
Subgroup 5, A - 10
Electrical Tests
(Read, Record and Delta)
Electrical Tests
(Read, Record and Delta)
100% SCREEN
'---~
\
[
'----------'
Assemble Packages
in Suitable Carriers
+
Electrical Tests
(Go- No Go)
Electrical Tests
(Die Probe)
+
Thermal Shock, M1051
(Temp. Cycling)
+
Visual Inspection
HPA-5956-0112-72
Electrical Tests
(Read and Record)
r-
+
High Temp. Non-Op Life
M1032, t = 340 hrs.
+
High Temp. Reverse Bias
M1038, t = 340 hrs .
LTPD=10 -
Electrical Tests
(Read, Record, Delta)
--
+
Operating Life, M1038
t = 340 hrs.
LTPD=10 -
+
Electrical Tests
(Read, Record, Delta)
(
(
100% SCREEN
'----_----J
~
Bond Strength
M2037, LTPD = 20
Electrical Tests
(Die Probe)
Assemble Samples
in Suitable Package
~
Electrical Tests
(Go- No Go)
Visual Inspection
M2073
Die Shear
M2017, LTPD = 20
+
Thermal Shock, M1051
(Temp. Cycling)
+
Constant Acceleration
M2006, 20 kg, Y1
~
Electrical Tests
(Read and Record)
r-
+
High Temp. Non-Op Life
t= 340 hrs.
LTPD=10-
+
Electric.al Tests
(Read, Record, Delta)
L...
r-
.~
Operating Life, M1038
t = 340 hrs.
LTPD= 10-
Electrical Tests
(Read, Record, Delta)
L...
I
1
iI
,-_S_TA_N_D_A_R_D_P_R_O_D_U_C_T_~II
IIL.....__T_X_,_TX_V_P_R_O_D_U_C_T_---J
CUSTOM PROCESSED
PRODUCT
TA=25C
10
\.
Subgroup 1, LTPD
GROUP B
Subgroup 1, LTPD - 15
rl----G-R-O-U-P-C-----.
I I
Solderability M2026
Resistance to Solvents M 1022
M~066
Subgroup 2, LTPD = 10
Subgroup 2, L TPD = 10
M1056A
Terminal Strength, M2036A
Subgroup 3, LTPD - 5
Subgroup 3, LTPD = 10
Subgroup 4, L TPD - 20
Electrical Tests
(Read and Record)
Subgroup 4, LTPD
Subgroup 5. LTPD - 15
Thermal Resistance Tests
(Optional)
= 15
Subgroup 5, A - 10
Subgroup 6, L TPD
=7
Mto32, t
= 340
hrs.
Electrical Tests
(Read, Record and Delta)
11
Device Marking
Dice
None
Beam Lead
None
Glass Package
JAN
JIN
ABCDI1j
AQIMI2j
Ceramic Package
DESC
JAN TX
JXIN
ABCDI1j
AQIMI2j
Typical Container/Marking
JAN TXV
JVIN
ABCDI1j
AQIMI2j
HP, Hi-Rei
ABC
DEFI1j
XXXI3j
Noles:
Label Marking:
1. Part Number.
Hewlett-Packard
Part Number
Date Code
2. Manufacturers 10.
3. Data Code.
Lot Number
Country of Origin
Quantity
12
15
QUALITY ASSURANCE
CONCEPTS AND METHODOLOGY
Quality Philosophy
In-process controls
Final electrical test procedures
Wafer Fabrication
Assembly
Die visual
Temperature/Humidity control
Pre-seal visual
Hermeticity
Electrical test
'11.=
where
A = assessed failure rate
NF = quantity of failures occuring in a time interval
t
No = quantity of acceptable devices at zero hours
t = time interval or duration of test
Life Tests
Generally it is more meaningful to discuss failure
rates in terms of the Mean Time To Failures or
MTTF, which is the reciprocal of the failure rate
and expressed as MTTF = 1/'11.. It is important to
recognize that both A and MTTF are statistical
averages and apply only to the useful life of the
product.
Environmental Tests
Mechanical Shock
Thermal Shock
Lead Fatigue
Temperature
Cycling
where
Power Cycling
Constant Acceleration
Terminal Strength
Salt Atmosphere
Ps = e-At = e-tl(MTTF)
where
Ea = Activation Energy
k = Boltzmann's Constant (8.63 x 10-5 eV/o K)
Ti = Absolute temperatures at which the failure
rates Ai were measured
17
ARRHENIUS PLOT
.
,
In'
EXTRAPOLATEDLlNE
/ F O R DERATING A
,,
,
\
\
In A = - Ea
kT
lIT
In A
where A is a constant.
A plot of In A vs. T-1 will yield a straight line as
illustrated, with a slope equal to -Eak-1.
18
Stress Condition
MIL-STD-750
Method 1026.3
TJ/TcH:::; 200 C
1000 hours
MIL-STD-883
Method 1008
Test Condition D
TA= 200C
2000 hours
MIL-STD-750
Method 1038/1039
Test Condition A
TA= 200C
1000 hours
Temperature Cycling
MIL-STD-883
Method 1010
Test Condition D
-65 to 200 C
100 cycles
Power Cycling
MIL-STD-750
Method 1036.3
ATc = 100C
5000 cycles
Thermal Shock
MIL-STD-883
Method 1011
Test Condition D
-65 to 200 C
100 cycles
Solderability
MIL-STD-202
Method 208
T PbSn at 230 C
5 second dwell
Hermeticity
MIL-STD-883
Method 1014
Kr-85/dry N2
Penetrant dye
N/A
Moisture Resistance
MIL-STD-202
Method 106
65 C/98% R.H.
10 day
MIL-STD-750
Method 2056
100 to 2,000 Hz
Mechanical Shock
MIL-STD-883
Method 2002
Acceleration at
1,500 G's
Terminal Strength
MIL-STD-750
Method 2036.3
TBA
(Package Related)
HTRB
(/
Test Method
Operating Life
30 second duration
Note:
1. The intent of the monitor program is to maintain a pulse on the reliability performance of products.
19
--~~--=~-------~~~~.
Microwave
Schottky
PIN/SRD
Bipolar
Transistors
Part Number
Quantity
Period of Testing
5082-2800
100
Biannual
HSCH-1001
100
Biannual
5082-2835
100
Biannual
5082-2831
100
Biannual
5082-2200/2202
100
Biannual
5082-2301/2302
100
Biannual
5082-3001
100
Biannual
5082-3080
100
Biannual
HPND-4001/4050
100
Biannual
5082-0180
100
Biannual
5082-3188
100
Biannual
HXTR-5103
60
30[21
Biannual
HXTR-61 03/61 04
60
30[2]
Biannual
HXTR-3101/3102
90
Biannual
Life/Environmental Tests
Operating Life
HTRB[1]
High Temperature
Storage[1]
Temperature Cycling
Thermal Shock
Hermeticity[1]
Solderability[1]
Moisture Resistance
Vibration Fatigue
Mechanical Shock
Terminal Strengthl 1]
Power Cyclingl 1]
Moisture Resistance
Pressure Pot[1]
Lead Fatigue[1]
Salt Atmosphere
Solvent Resistance
Noles:
1. Where applicable.
2. May be electrical rejects.
DIODES
HERMETICITY
(100 UNITS)
I
I
25 UNITS
25 UNITS
25 UNITS
25 UNITS
20
BIPOLAR TRANSISTORS
(Method of Sequential Testing)
HERMETICITY
150 UNITS)
25 UNITS
"
25 UNITS
21
23
----------~----
S-Parameters -
MAG is
The forward
transmission gain of a transistor with a 50
source and load.
hFE
24
C)
(MAX)
('
The HXTR-4101
The HXTR-4101 is designed and characterized
for common-base oscillator transistor applications. The device uses the HXTR-2001 chip
packaged in the HPAC-100. The HXTR-4101
has typical output power (oscillator power) of
20 dBm at 4.3 GHz. This device is characterized
from 1 GHz to 12 GHz.
26
Low Cost
Linear
Power
General
Purpose
Low
Noise
General
Purpose
Linear
Power
4 GHz
(HXTR-)
2 GHz
(HXTR-)
4 GHz
(HXTR-)
2 GHz
(HXTR-)
1 GHz
(HXTR-)
1 GHz
(HXTR-)
1 GHz
(HXTR-)
5001
5002
3002
5001
5002
7011
3001
7011
3002
7011
3104
3615
3645
3101
3615
3102
3104
3615
6001
7011
6001
7011
2001
2001
3001
=t
3675
3645
3675
3103
3645
6101
6102
2102
2102
6106
7111
6103
6104
2101
6105
2101
CHiP
HPAC-l00X
DV~
0
HPAC-70GT
+
+
5101
5101
5103
5103
5104
5102
5102
CJ
HPAC-l00
HPAC-200
10
0 0)
0
HPAC-200GB/GT
27
---------- ---------------
4.0,-,--,--,-,--,-----,---,-----,--,,,
3.0
in
"~
2
~.
""
ilj
2.0
i5
z
1.0
FREQUENCY (GHz)
3.0
VV
HXTR-2001~
HXTR-300' ............
y/ . /
Ix
",./'
1.0
"
V
~
-- ~ ~ ~HXTR-7011
""",~
~
-- -- :~ F--''''
-- ---
~.",.
"I'HXTR-<OOl
O~
0.6
0.7
0.8
0.9
1.0
1.5
FREQUENCY (GHzl
28
2.0
3.0
4.0
HXTR-2001/-2101/-2102/-6105/-6106
I
HXTR-7011/-361S/-3645/-3675/-7111
15
HXTR-3001/-31 01 /-31 03
~z
~
~
'0
in
~
HXTR-5002/-S102/-5104
H Xl R-3002/-31 02/-31 04
00':.5--':0.'="6-'0:':.''---="0.''"'-:0"=.9--:-'.':.0-----:''=.5---2='".0,------:3'=.0---,'4.0
FREQUENCY (GHz)
/i':t:'::L
.30
~=t=t==ttht::::=+===+==::t::-I
/1-~HXTR_30021 3104
---______________ _
3102/
~J.
---.20
---,
1\
I \
\
--
- -----,
HXTR-3001/-3101/-3103
.10 1--+-+-''''\C--+-+",,\,CHX-T-R-.'-O'-';-.3+-6-'5-;.-36-45-;.-l36-'-5;-.'-'-11--+-----1
1\ IT'~'M'~.
00':.5--:'0.""6-0:':.''---="0.':-'-0:':.9,..-:'':..0-----:''::.5---='2.0:-----:3"=.0---,'4.0
FREQUENCY (GHz)
29
..
GO
'0
z
....~
..
GO
e-
..."
~
GO
c
Cl
;
...
0
:
c
::::;
...
Part Number
HXTR7011
3615
3645
'0
....~
8
2! So
."
Cl ...
...I
.
~
c
::::;
!lc
'&~
:f~
....
Part Number
HXTR3001
3101
3103
3615
7011
Part Number
HXTR3002
3102
3104
3615
7011
Part Number
HXTR3645
3675
7011
High Performance
Typical Noise
Figure FMIN (dB)
2.8
2.7
2.8
2.8
2.8
1.7
1.6
1.8
1.5
1.7
Typical
S21E 2 (dB)
6.0
5.3
4.4
4.6
12.0
11.0
9.8
9.4
9.8
10.5
Typical
ldB (dBm)
22.0
27.5
22.0
27.5
21.0
23.0
29.0
21.0
23.0
23.0
29.0
Frequency
4GHz
4 GHz
4 GHz
4 GHz
4 GHz
2 GHz
2 GHz
2 GHz
2 GHz
2 GHz
Frequency
4 GHz
4 GHz
4 GHz
4 GHz
2 GHz
2 GHz
2 GHz
2 GHz
2GHz
2 GHz
Frequency
4 GHz
4 GHz
4 GHz
4GHz
2 GHz
2 GHz
2 GHz
2 GHz
2 GHz
2 GHz
2 GHz
Low Cost
Typical Noise
Figure FMIN (dB)
1.2
1.4
1.2
Typical
S21E 2 (dB)
15.7
15.0
15.0
15.8
16.5
Typical
p, (dBm)
Frequency
1 GHz
1 GHz
1 GHz
Frequency
1 GHz
1 GHz
1 GHz
lGHz
1 GHz
Frequency
1 GHz
1 GHz
1 GHz
1 GHz
1 GHz
Package
HPAC100X
Chip
100
Chip
100
100X
100
100
100
Chip
Package
HPACChip
70 GT
100X
100
Chip
100
Chip
100X
100X
70 GT
Package
HPACChip
Chip
100
Typicial Associated
Gain G a (dB)
'18.0
16.6
17.5
Typical Noise
Figure FMIN (dB)
1.5
1.8
1.7
1.4
1.2
Typical
G'dB (dB)
18.0
15.0
16.0
19.0
19.0
Typical
P'dB (dBm)
19.0
17.5
19.0
22.0
21.0
21.0
19.0
21.0
Typical
FMIN (dB)
1.7
2.8
1.7
Frequency
2GHz
4GHz
4GHz
Typical Associated
Gain Ga(dB)
8.3
9.0
9.0
8.2
8.7
13.0
13.5
12.0
12.5
13.0
Typical Noise
Figure FMIN (dB)
3.8
4.2
2.8
3.8
3.2
2.7
2.2
2.5
1.7
2.5
Typical
G'dB (dB)
8.0
7.5
7.5
7.0
13.5
13.5
12.5
13.0
13.0
11.0
9.0
Page
Number
69
44
86
46
104
66
89
92
95
46
Page
Number
32
52
69
98
32
50
34
58
66
101
Page
Number
38
41
74
200 GB/GT
77
Chip
Chip
Chip
100X
100
200
200
36
38
41
61
74
80
83
Package
HPACChip
100X
100X
Package
HPACChip
100X
100X
100X
Chip
Package
HPACChip
100X
100X
100X
Chip
Package
HPAC100X
100X
Chip
Page
Number
46
63
66
Page
Number
34
54
58
63
46
Page
Number
36
56
61
63
46
Page
Number
66
69
46
Oscillator
Part Number HXTR-
4101
Frequency
Package HPAC-
Page Number
4.3 GHz
20.5
100
72
30
Part No.
Description
HXTR-2001
HXTR-2101
HXTR-2102
HXTR-3001
HXTR-3002
32
50
52
34
36
HXTR-3101
HXTR-3102
HXTR-3103
HXTR-3104
HXTR-3615
54
56
58
61
63
HXTR-3645
HXTR-3675
HXTR-4101
HXTR-5001
HXTR-5002
66
69
72
38
41
HXTR-5101
HXTR-5102
HXTR-5103
HXTR-5104
HXTR-6001
74
77
80
83
44
HXTR-6101
HXTR-6102
HXTR-6103
HXTR-6104
HXTR-6105
86
89
92
95
98
HXTR-6106
HXTR-7011
HXTR-7111
31
GENERAL PURPOSE
TRANSISTOR CHIP
rli~ HEWLETT
~e. PACKARD
HXTR2001
Features
HIGH GAIN
17.5 dB Typical at 2 GHz
HIGH OUTPUT POWER
20.0 dBm P1dB Typical at 2 GHz
LOW NOISE FIGURE
3.8 dB Typical at 4 GHz
WIDE DYNAMIC RANGE
Description/Applications
The HXTR-2001 is an NPN silicon bipolar transistor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and performance.
The HXTR-2001 features a metallization system that provides consistent and reliable performance at rated
dissipation under high temperature operation. The HXTR2001 also is provided with a dielectric scratch protection
over its active area.
ChipO",lIIne
Dimensions In.MlcrornetarJ (Inches) 25 (0.001)
Gold Bonding Pad Dimensions: 25 (0.001) x 25 (0.001)
Typical
89 (0.0035) Typical
Chip Thickness:
Collector Back Contact:
Silicon-Gold Eutectic
Symbol
Vcao
VCEO
Veao
Ie
PT
TJ
TSTG
Parameter
LImit
30V
20V
1.5V
rOmA
900mW
300C
-6SC to
3QOC
Notes:
1. Power dissipation derating should include a ElJB (Junction-
32
Pa,~meters
Symbol
BVCES
je-100~A
VCE~15V
ICEO
3041.1"
nA
ieeo
3036.1"
nA
hFE
3076.1 '
MAG
Pide
FMIN
VeE
1-2GHz
4GHz
~
w
'"
'0
z
'"
36
32
28
24
20
16
.......
I I
I I
""'-
MAG
"''"
"-
i-"'"
J
VeE -3V_
/'
If ~
/ ......... VeE -W'::
~
V/.. ......
""":'1
11
10
l'\.
I\,
1//
,,/
~FI'N
0.2
12
'"
0,1
3.8
Veel = lQ - ,15V-
13
"
11.5
20.0
18,5
15
14
12
17,5
dB
16
r-- S
r-- I 21.I'
220
120
2,3
3246.1
46Hz
100
50
dBm
f=2.0GHz
Max.
500
dB
4GHz
15V, Ie = 25 rnA
Typ.
Min.
30
f=2GHz
VeE = 15V, Ie = 15 mA
VeE '1V\
0.4 0,6
FREQUENCY IGHz)
Units
!
10
15
25
20
30
Freq. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
Mag.
0.57
0.68
0.72
0.74
0.75
0,76
0,76
0.76
0.76
0.76
0.77
0.77
0,77
0.77
0.77
0.76
0.76
0.76
0.76
0,76
(dB)
33,3
172
14.5
12.0
10,1
8.6
7.2
6.0
5,1
-175
176
-177
-178
.179
-179
-179
-180
-180
30.2
276
2!>.4
23.7
22.2
20.8
19.9
18,8
18.0
4.1
3.5
2,9
$22
$12
$21
Ang.
-88
-124
-141
-150
-156
-160
-163
165
-167
-168
Mag.
Ang.
(dB)
Mag.
46,2
32,5
144
123
113
106
102
-42
-39
0,008
0,011
0.013
0.014
0,014
0,015
0.015
0,016
0,015
0.017
0,021
0.025
0.029
0,034
0,038
0,043
0,048
0052
0.057
23.9
18,7
15.3
12.9
11.0
9.8
99
2,0
1.6
1,6
1.5
1.4
-37
-37
36
97
-36
95
77
-36
-36
-35
-34
-32
-31
73
-29
69
66
63
59
56
53
-28
93
91
85
81
8,7
7,9
5.3
4.0
3.2
2.7
2.3
-38
-27
-26
-26
-25
-24
0.062
Ang.
58
43
37
35
35
36
37
38
40
42
49
33
0.44
Ang.
-20
-26
-26
-24
-22
-21
-20
19
-18
18
18
54
0.43
0.43
58
0.43
-23
0.43
0.44
0.44
0.45
0,45
0.46
0.47
-26
60
61
62
62
62
62
61
*Values do not include any parasitic bonding inductances and were generated by use of a computer model.
RF Equivalent Circuit
Mag.
0,85
0.67
0,56
0.51
0.48
0.46
0,45
0.44
0.44
-20
29
-32
-35
-38
-41
-44
Flin-
GENERAL PURPOSE
TRANSISTOR CHIP
HEWLETT
~aI PACKARD
HXTR-300l
Features
HIGH GAIN
16 dB Typical at 2 GHz
1--------
305
(o.ol~)
PAD
305 {O.012}
Description/Applications
The HXTR-3001 is an NPN silicon bipolar transistor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and performance.
BASE
The HXTR-3001 features a metallization system that provides consistent and reliable performance at rated
dissipation under high temperature operation. The HXTR3001 also is provided with a dielectric scratch protection
over its active area and large gold bonding pads for ease of
use in most hybrid applications.
Chip Outline
DimenSions In Micrometers (Inches) - 25 (O.001)
25C)
Symbol
Parameter
VCBO
VCEO
VE80
Ie
Pr
TJ
TSTa
Limit
30V
20V
1.SV
70 mA
900 mW
30Q"C
-65 0 C to
300C
In
Notes:
1. Power dissipation derating should include a C)JB (Junctionto-Back contact thermal resistance) of 125 C/W.
Total
(~)JA
34
Symbol
BVCES
ICEO
ICBO
= 15V
hFE
MAG
= 15V. Ie ~ 15mA
Min.
Units
3011.1'
Mall.
Typ.
30
3041.1"
nA
500
3036.1"
nA
100
3076.1'
50
1= 2000 MHz
dB
f =1000 MHz
2000 MHz
dBm
120
220
16.0
P'dS
FMIN
I'"
500 MHz
1000 MHz
3246.1
21,0
19.0
1.2
1,5
dB
2000 MHz
2.2
2.
22
- V~E Jsv i
.:s
lil
24
i..
'\'!
12
10
"""I
fI
~ "
12
16
~~
16
I I
\Ie'2V
..eC:::-
18
20 - -
15V- -
20
0;
I,
'\
vCE""'f\ - e -
0.1
00
10
15
~
FREQUENCY (GHz)
20
25
30
ImAI
VS.
Current
521
512
Freq. (MHz)
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
100
200
300
400
0.651
0714
0.7410,754
0.761
0765
0.767
0.768
0.769
0.770
0770
0,769
0.766
0.163
0760
-74
-113
30.6
27.8
146
125
25.3
23,2
14.46
21.S
11.84
10.00
8.63
7.59
6.77
6.11
4.10
3.06
-37.2
-33.9
-32.9
-32,3
-32.0
-31.7
-31.5
-31,2
-31.0
-30.7
-29.3
-28,0
-26.8
-25.7
0.014
0,020
0.023
0.024
0.025
0.026
0.027
0.028
0.028
59
43
-132
34.04
24.66
18.41
0.851
0.659
0.539
0.471
0.429
OA05
0,389
0.377
0,370
0.365
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
0.756
-143
-lSI
-155
-159
-162
164
-166
-171
-174
-176
-177
-178
-179
20.0
18.7
17.6
16,6
157
12.2
9.8
7.8
6.2
4.9
3.7
2.46
2.05
1.75
1.53
114
107
102
98
95
93
91
89
81
74
69
63
58
53
-24.7
-23.S
35
33
31
32
32
33
34
0.Q29
35
0.034
0.040
0.046
0,052
0.058
0.064
41
44
47
48
'Values do not include any parasitic bonding inductances and were generated by use of a computer mOdel.
RF Equivalent Circuit
36
48
48
0.358
0.364
0.375
0.389
0.405
0.423
Ang.
-2:3
-33
36
-36
-35
-34
-34
-34
-34
34
-38
-43
-49
-55
tn
--66
LINEAR POWER
TRANSISTOR CHIP
r/i~ HEWLETT
a!e.
PACKARD
HXTR-3002
Features
HIGH OUTPUT POWER
22 dBm Typical P1dB at 1 GHz
HIGH PldB GAIN
18.0 dB Typical GldB at 1 GHz
HIGH IS21EI2 GAIN
16.5 dB Typical at 500 MHz
LARGE GOLD BONDING PADS
Description/Applications
The HXTR-3002 is an NPN silicon bipolar lransislor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and performance.
BASE
Chip Outline
Dimensions in Micrometers (Inches) .!: 25 (O.o01)
Parameter
Collector to Base Voltage
Collector to Em ilter Voltage
Emitter to Base Voltage
DC collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Umit
45V
27V
4.0V
100 rnA
1AW
300C
-65'C to
300'C
Notes:
1. Power dissipation derating should include a (-)JS (Junctionto-Sack contact thermal resistance) of 125C/W.
Total
(')JA
36
BVEBO
BVCBO
Test
MIL-STO-750
3001.1'
30 pA
2V
lEBO
ICES
ICBO
32 V
Units
V
Min.
40
Typ.
3011.1'
24
30261'
$.3
30611'
pA
30411"
nA
200
30361"
nA
hFE
PldS
1000 MHz
dBm
22.0
GldB
f = fOOO MHz
dB
180
\S21E1 2
Transducer Gain
VCE'c 18 V, Ic ~ 30 mA
f = 500 MHz
1000 MHz
d8
16.5
30 mA
100
30761'
Max.
15
40
75
13.6
E
~
28
20
26
24
18
'"Cl
22
16
20
14
18
"'-''"
16
"
12
14
0)
12
10
;E
10
~
c5
"'"
0
0.1
0.2 0.3
10
0.5
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
Mag.
0.658
0656
0.652
0,648
0.644
0641
0.637
0.634
0632
0629
0.623
0618
0614
0.611
0608
0604
50
500 MHz.
5 21
An9
-17
(dB)
32
185
183
-47
-60
178
17.3
72
16.7
161
154
14.8
14.2
136
-82
91
-99
105
-111
131
143
151
156
-160
163
10.9
8.8
7.0
5.6
4.3
3.3
S ..
5,2
Mag.
844
8.18
7.79
7.33
6.85
637
5.91
549
5.11
4,76
350
2.74
2.24
1.90
1.65
1.46
Ang.
(dB)
170
161
153
145
138
132
-35.9
-30.1
27.0
250
-23.7
22.7
126
-220
121
117
113
98
88
79
72
21.5
-210
20.7
19.7
65
59
-19.2
18,8
18.4
-18.1
17.7
Mag.
0,016
0031
0.045
0.056
0066
0073
0080
0.085
Ang,
Mag,
82
75
0.991
0089
0.092
0.103
0.110
0,115
0.120
0.125
0130
'Values do not Include any paraSitic bonding Inductances and were generated by use of a computer model.
RF Equivalent Circuit
40
18V. Ic = 30 mA
S"
Freq. (MHz)
30
20
Ic(JnA)
FREQUENCY (GHz)
37
68
62
56
52
48
45
42
39
32
29
28
27
27
27
0965
0.926
0881
0.833
0.787
0.744
0.706
0.671
0641
0.541
0492
0.469
0,461
0.460
0.465
Ang.
-7
-14
20
25
29
-33
-36
39
41
-43
50
-54
58
-62
-66
-70
Flio-
LINEAR POWER
TRANSISTOR CHIP
HEWLETT
~~ PACKARD
HXTR-5001
Features
HIGH OUTPUT POWER
23 dBm Typical PldB at 2 GHz
22 dBm Typical PldB at 4 GHz
'I
-r
'"l'"
Description IApplications
The HXTR-500l is an NPN silicon bipolar transistor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and performance.
I
I
_...L
BASE
The HXTR-5001 features a metallization system that provides consistent and reliable performance at rated
dissipation under high temperature operation. The
HXTR-5001 also is provided with a dielectric scratch protection over its active area.
Chip Oulline
Dimensions in Micrometers (Inches)
25 (0.001)
Chip Thickness:
Collector Back Contact:
ITA = 25C)
Symbol
VCBO
VCEO
V.BO
Ie
Pr
TJ
TSTG
Parameter
Collector to Sase Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Limit
45V
27V
4.0V
lOOmA
lAW
300C
-65'C to
300'C
Notes:
38
Symbol
BVCBO
BVCEO
::I mA
Collector-Emitter Breakdown Vollage at Ie = 15 mA
BVEBO
lEBO
ICES
Units
Min.
40
3001.1'
~A
3011,1'
24
3026.1'
3.3
30611
at VeE = 32 V
ICBO
I1FE
P1dB
3041.1"
/'A
nA
3036.1"
nA
f = 2 GHz
4GHz
dB
PSAT
f= 2GHz
4 GHz
dBm
f = 28Hz
4GHz
4 GHz
dBm
IPJ
100
75
40
23.0
22.0
dBm
"
15
GldB
Max.
200
3076.1"
f= 2 GHz
4GHz
Typ.
13.5
8.0
25.5
25.0
35
25
32
30
E
~
'"
25
i'--
0:
..
Q
20
!H
"
I
10
:;;
..
<5
:;;
0,1
0.2 0.3
0.5
iii
:!!
".
E
Q
20
~r-:1BV
~P'"
r- -
j2V
MAG
Pl~B
'"
i i
!'\
[;1'
"" \"
15
:-
30
P1dB
IS21EI~
iii
:!!
Jool
'"
0-
10
6 8
18V
TV ~ -
GldB
10
20
30
40
50
FREQUENCY IGHz)
39
822
812
Mag.
Ang.
4B
Mag.
Ang.
dB
Mag.
Ang,
Mag,
Ang.
0,100
0,200
03Q0
0.74
0.73
0.72
0.71
0.70
0.69
0,67
067
0.66
0.65
0,63
0.62
0.61
0.61
0.61
0,60
060
0.60
0.59
0.59
-15
30
44
-57
-68
-78
67
94
-101
-107"
128
-140
148
-154
158
-161
-164
-166
-168
-169
20.2
10,2
9,88
9.42
8.87
8.28
7.71
7.16
6.65
6.19
5.78
4.25
3.33
2.73
2.32
2.02
1.79
1.61
1.47
1.35
1.25
171
162
154
146
140
-S8
-33
30
28
-26
-25
25
-24
-24
-23
-22
-22
21
-21
-20
-20
-19
-19
-19
-18
0.01
0.02
0.03
0.04
005
0.08
0,08
0.06
0.07
0.07
0,08
0.08
0,09
009
0.10
0.10
0,11
0.11
0.12
0.12
8S
75
69
63
58
54
0.99
0,97
0.93
0.89
0.85
0,80
076
0.73
0.70
0.67
0.58
0.53
0.51
0.50
0.49
0.49
0.49
0.49
0.49
0,49
-5
-10
15
-19
0,400
9:11
Freq. (GHz)
0.500
0.600
0.700
0,800
0.900
1.000
1',500
2 000
2.500
3.000
3,SOO
4.0'00
4S00
5.900
5.S00
6.000
19.9
19.5
19,0
18.4
17.7 .
17.1
16.5
15.8
15.2
12.6
10.5
8.7
7.3
6.1
5.8
4.1
3.3
2.6
2.0
134
129
124
120
117
103
94
87
81
76
71
66
62
58
55
50
47
44
42
37
35
35
35
36
37
38
39
40
40
-22
-24
26
-28
-29
30
32
$2
33
-35
36
38
-40
-43
45
47
'Values do not Include any parasitic bonding Inductances and were generated by use of a computer model.
RF Equivalent Circuit
40
Flio-
LINEAR POWER
TRANSISTOR CHIP
HEWLETT
~~ PACKARD
Features
HXTR-5002
t-------(o~SI-------I
Description IApplications
The HXTR-5002 is an NPN silicon bipolar transistor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and performance.
The HXTR-5002 features a metallization system that provides consistent and reliable performance at rated
dissipation under high temperature operation. The
HXTR-5002 also is provided with a dielectric scratch protection over its active area.
Gold Bonding t>ad Dimensions: - 38 (O.0015) x 20 (0.008) Typlca)
Chip Thlckne ., 90 (0.0035! Typical
Coliector Sack Contact: Silicon-Gold Eutectic
( .
p,TJ
TSTG
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Limtt
45V
27V
4V
250 rnA
4W
300C
-65'C to
3ooC
Operation in excess of anyone of these conditions may resut.tln permanent
damage to this device.
Notes:
1. Power dissipation derating should include a ()JB (Junctionto-Back contact thermal resistancel of 125 0 C/W.
Total (")JA (Junction-to-Ambientl will be dependent upon the
heat sinking provided in the individual application.
2. A MTTF of 3.5 x 106 hours will be met or exceeded when the
junction temperature is maintained under TJ = 125 0 C (based
on an activation energy of 1.1 eVI. For operation above this
41
Symbol
BVcBo
SVCEO
BVEBO
Ic~10mA
3001.1'
IB=100~A
Units
Min.
40
3011.1'
24
3026.1'
3.3
Typ.
Max.
IE80
3061.1
~A
ICE$
3041.1"
nA
200
ICBO
3036.1"
nA
hrE
3076.1'
P'dB
GldB
f= 2GHz
4GHz
dSm
f = 2GHz
4GHz
Saturated Power Output 18dB Gainl
(3dB Gain!
II
IP3
PSAT
= 2GHz
4GHz
= 2GHz
VCE=18V,
= 4GHz
40
75
29.0
27.5
dB
12.5
7.5
dBm
31.0
29.5
(I/o
4GHz
100
15
38
23
dBm
37
Ic~110mA
30
25
"
.
0
2
E
~
20
15
10
'"
FREQUENCY (GHz)
42
18V, Ie = 110mA
811
Freq, (GHz)
Mag.
Ang.
(dB)
821
Mag.
0.100
0.200
0.300
0.400
0,500
0.600
0,700
0.800
0.900
1,000
1,500
2.000
2,500
3,000
3,500
4.000
4.500
5,000
5,500
6.000
0.55
0.65
0,72
0.76
0,79
0.80
0.81
0,81
0.82
0.82
0.83
0.83
0,83
0.83
0,83
0.83
0,83
0.83
0.83
0.83
-61
25.4
24.2
22.3
20.6
19,1
17.8
1M
15.5
14,S
13.7
10,3
19.7
16.2
13.1
10,7
9.01
7.73
6.74
5.97
5,35
4.84
3.29
7.9
2.49
2,00
-98
-119
-132
-141
-147
-151
-155
-158
-160
-167
-170
-173
-174
-175
-176
177
-177
-178
-178
6.0
4,5
3,2
2,1
1,1
0,3
-0,5
-1,2
1,68
1.44
1.27
1,13
1.03
0,94
0.87
Ang.
(dB)
156
133
125
117
111
106
102
99
97
94
86
80
74
69
64
60
-31.S
-27.3
-25.6
-24.8
-24.4
-24.1
-24.0
-23,8
-2$,7
-23,7
-23.4
-23.3
-23.1
-22,9
-22.6
-22.4
-22.1
21,9
-21,6
-21.4
55
51
47
43
812
Mag.
0.03
0.04
0,05
0.06
0,06
0.06
0.06
0,06
0,06
0.06
0.07
0,07
0.Q7
0.07
0,07
O.OB
0.08
0.08
0.08
0.08
*(Values do not include any parasitic bonding inductances and were generated by use of a computer modeL)
RF Equivalent Circuit
43
822
Ang.
Mag.
Ang,
68
50
39
0,93
-26
-46
-60
-71
-78
-84
32
27
24
22
20
19
18
16
16
17
18
19
20
21
21
22
22
0.76
0.63
0.53
0.45
DAD
0.36
0.33
0.31
0,30
0.25
0,24
0.24
0.25
0.27
0.28
0.30
0,32
0,34
0,35
89
-93
-96
-99
-100
-114
-117
-118
-119
.120
-121
-121
-122
123
Fh=- HEWLETT
~~
LOW NOISE
TRANSISTOR CHIP
PACKARD
."
HXTR-6001
Features
LOW NOISE FIGURE
1.7 dB Typical FMIN at 2 GHz
2.7 dB Typical FMIN at 4 GHz
1------- 305 ( 0 . 0 1 2 ) - - - - - 1
I
/-::-
j
sa
Description/Applications
~~-~-~~~~
305
(0.012)
Chip Outline
(TA = 25C)
Parameter
Symbol
Vceo
VCEO
VEBO
Ic
PT
TJ
TSTG
Lim"
35V
20V
1.5V
20mA
300mW
300C
-6SC to
3ooC
Notes:
Bipolar Transistors",
44
'
..
\
Ga
MIL-STD-750
Test Method
301U'
3041.1"
1-2 GHz
Associated Gain
~
1=2 GHz
3036,1"
3076.1'
Units
V
nA
nA
Min.
30
Typ.
Malt.
150
500
100
250
50
1,7
3246.1
2.7
13.0
d8
90
4GHz
VCE=10V, le=4mA
*300ILS wide pulse measurement ::;2% duty cycle.
*'Measured under low ambient light conditions.
21
18
15
~
to
r--.- .........
12
r--
.,
1----.
'""
f------.
"'"
M~G
'"Ga"""'"
'"",,
r-...
.....
l'-..
i
_FM~
1.0
2.0
3.0
FREQUENCY (GHz)
Figure 2. TypicaIIS21EI2,
4 GHz.
Frequency at VCE
10 V, Ie
10V. Ic = 4mA
$11
100
200
300
400
500
600
700
800
900
1000
1500
2QOO
2500
3000
3500
4000
4500
5000
5500
6000
7000
Mag.
0.87
0.85
0.82
0.79
0.76
0.73
0.70
0.68
0,66
0.65
0.60
0.58
0.57
0.56
0.56
0.55
0.55
0.55
0,55
0.54
054
Ang.
-16
30
-44
-57
68
78
(dB)
22.0
21.7
21,1
20.5
19,8
19.1
86
18.5
94
-100
17.6
17.0
16.3
13.5
11.3
9.5
8.1
6.8
5,7
4.8
-106
-126
-139
146
-152
-156
-159
-162
-164
-165
-167
-169
3,9
3.2
2,5
1.4
S21
Mag.
12.60
12.10
11.40
$12
10,60
9,77
900
837
7,62
7.05
6.54
4.73
3.67
2,99
2.53
2,19
1.93
1,73
1.57
1.44
1.34
1.17
Ang.
170
160
151
144
137
131
126
121
118
114
102
(dB)
Mag.
-46
-40
-36
-35
0.005
0010
0015
93
-29
-28
-27
-26
-26
25
-24
24
-23
-22
87
82
77
72
68
65
61
57
51
34
-32
-32
-31
-31
31
-29
oms
0.021
0.024
0.025
0.027
0.028
0.029
0.034
0,037
0.041
0.045
0.049
M53
0.057
0.062
45
S22
Ang.
82
75
68
63
58
55
52
50
48
47
45
45
47
49
51
52
53
54
0,~8
55
0.071
0.080
55
56
*Values do not include any parasitic bonding inductances and were generated by use of a computer model.
RF Equivalent Circuit
Current at
4 mAo
VS.
Mag.
0.99
0,98
0.95
0,93
0,91
0.89
0.87
0.85
0.84
0.82
0.79
0.78
0.77
0,77
0.76
0.76
0.78
0.76
0.71'1
0.76
0,77
Ang.
-3
-5
7
9
-10
-to
-11
-11
-11
-11
-12
-13
-14
-15
-16
-18
-19
-21
-23
-24
-28
Flio-
LOW NOISE
TRANSISTOR
CHIP
HEWLETT
~~ PACKARD
HXTR-7011
Features
LOW NOISE FIGURE
2.8 dB Typical FMIN at 4 GHz
1----- 3OS(0Il12)
------"I
30S
:1
Description
The HXTR-7011 is an NPN silico.n bipolar transistor chip
designed for use in hybrid applications requiring superior
noise figure and associated gain performance at VHF, UHF,
and microwave frequencies. Use of ion implantation and
self alignment techniques in its fabrication produce superior
device uniformities and periormance.
The HXTR-7011 features a metallization system that provides consistent and reliable performance at rated
dissipation under high temperature operation. The HXTR7011 also is provided with a dielectric scratch protection
over its active area and large gC'id bonding pads for ease of
use in most hybrid application~.
ChlpOulflne
Dimensions in Micrometers (Inches) .t 25 (0.001)
Ie
Pr
TJ
TSTa
Limit
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Tota! Device Dissipation
Junction Temperature
.Storage Temperature
40 (0.0016) X 48 (0.0019'
89 (0.0035)
Silicon-Gold Eutectic
30V
11lV
1.5 V
65mA
600mW
3000
-65C to
3000
Notes:
1. Power dissipation derating should include a ~)JB (Junctionto-Back contact thermer resistancel of 125 C/W.
Total HJA (Junction-to-Ambient) will be dependent upon the
heat sinking provided in the individual application.
46
Symbol
BVCBO
~A
BVCEO
15 mA
ICBO
ICEO
hFE
FMIN
15 V
Ic~10mA
f = 1000 MHz
f~ 2000 MHz
f =4000 MHz
P'dB
GloB
Min.
30
18
3011.1"
3036.1"
nA
3041.1
nA
Typ,
50
175
dB
32461
1.7
2.8
m 1000 MHz
f = 2QOO MHz
f = 4000 MHz
dB
18.0
13,0
1= 4000 MHz
dBm
18.0
f = 4000 MHz
dB
6.5
32461
8,2
10
./
G~
/
r
~
w
(.
0:
::J
'u:"
w
"
0,
'"o
----
FMIN
I
3
I J
4 5
LI
10
l
20
30
FREQUENCY (GHz)
47
VS.
Current at
Max,
50
55
3076.1
Associated Gain
VeE = 10V, le= lOrnA
Ga
Unlla
3001.1"
Typical S-Parameters
(VeE = 10 V, Ie = 10 mAl
$11
Freq.(MHz)
Mag.
Ang.
(dB)
100
200
300
400
0.68
0.66
0,63
0,62
27.7
26.1
24,5
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0,62
-41
-74
-99
-Ill
-107
-135
-143
-149
-154
-159
0.61
0.60
0.59
0,59
0.59
0.59
0,57
0.61
0.64
-176
172
163
156
0.70
0.71
0,78
0,83
0,88
0.93
149
144
138
137
133
134
Typical S-Parameters
23.0
21,5
20.2
19,0
18,0
17,1
16.2
12,9
10,5
8.7
7,2
5,9
4.7
3.6
2,8
2.1
1,1
(VeE
= 15 V,
$11
Freq. (MHz)
Mag.
Ang.
(dS)
100
200
300
400
500
600
700
800
0,63
0,62
0,81
-53
-90
-112
-127
-130
-146
-152
-153
-162
29,5
27,5
25,5
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.61
0,60
0,60
0,59
0.59
0,59
0,59
0,59
0.58
0,62
0,64
0,70
0,72
0.79
0.85
0.88
0.94
-166
180
163
160
158
147
143
136
136
23.6
22.8
20,6
19,3
18.3
17,3
16,5
13.1
10.6
8,8
7.8
6.0
4,8
132
3,7
2,9
2,1
133
1.2
RF Equivalent Circuit
$12
$21
Mag.
24.27
20.18
16.79
14,13
11.89
10.23
8.91
7.94
7.16
6.46
4.42
3,35
2.72
2.29
1.97
1.72
1.51
1.38
1,27
1,14
Ie
Ang.
(dB)
Mag.
Ang.
Mag.
158
140
126
119
112
107
103
99
97
95
84
77
70
64
58
53
48
42
38
33
-36.6
-33.9
-32.1
-30.9
-29,3
-29,2
0.02
0.02
0,03
0,03
0.03
0.04
0.03
0.04
0,04
0.04
66
73
0,93
0,83
55
54
0.73
0.67
0,62
0,58
0,57
0.55
0.53
0,52
-29.4
-29.1
-28,6
-27,6
-26.6
-24,9
-233
-21.6
-20,0
-18,7
-17.1
-16.3
0.05
0.06
0.Q7
48
51
53
52
55
55
64
75
0.48
0,50
100
0.46
0.46
0.43
0.43
0040
0.36
0.36
0,33
Mag.
Ang.
Mag.
-41.1
-36,3
-34,8
-32.6
0,01
0,02
0,02
0,02
71
-33,1
0.02
0.03
0,03
0.91
0.79
0,70
0,64
0.60
0.59
0,57
0,56
0,55
0.08
0.10
0,12
15.0
-14,6
0,14
0,15
0,18
0,19
Ang.
(dB)
151
133
121
111
108
103
100
96
94
91
82
75
83
69
94
95
99
99
98
$22
Ang.
-12
-19
-23
-23
-24
-22
21
-20
-19
-18
-16
-IS
-17
-20
-21
-28
-27
-41
-49
-67
= 18 mAl
$12
$21
Mag.
29.85
23,71
18,84
15,14
13,80
10,72
9,23
8.22
7,83
16,66
4,52
3.39
2,75
69
63
57
2.32
2,00
1,74
1,53
140
1.27
1.15
48
-31,6
-31,2
-30.5
-30.2
-29.4
-27.7
-25.6
-24,0
0.03
0.03
0,03
0,04
0.05
0,06
-16.6
0.08
0.09
0,11
0,14
0,15
-15,2
-14,8
0.17
0.18
-21.9
-20.5
52
-19,0
46
41
36
31
-17.4
60
50
56
46
49
53
55
61
62
59
81
89
94
97
99
102
101
101
103
$22
Ang.
-13
-19
-21
-20
-20
-lS
-17
-16
0.54
0,52
-14
14
-14
0,53
-12
0.49
0.50
0.47
0,47
0.44
0.39
0,39
0,35
-14
-17
-17
-24
-24
-37
-44
-61
EMITTER
BASE
"1.-------'
RBA
01,
RBC
RBI
RB'
CBP
CBA
NOTE 1:
This equivalent circuit is for the transistor chip only. It does not include
parasitic bonding reactances. For additional information, please refer to
"Low-Noise Microwave Bipolar Transistor with Sub-Half-Micrometer
Emitter Width" by Tzu-Hwa Hsu and Craig P. Snapp, I EEE Transactions
Rc
COLLECTOR
0'0
- - - exp (-j 2 n I rl
1 + j I/Ib
=---
1+ hFE
00
sin
fb
(2n hi]
-00
1m
----
lsin 2n ITI +1
fb
+ (1/lbI 2
sin
(2n ITI]
CSP
(pFI
C EP
(pF)
Cal
(pF)
CSE
(pF)
(pF)
CSA
CTE
(pF)
REC
(0)
ReA
(ll)
fle
(n)
Re
(!I)
,,0
tb
GHz
psec.
108
,T
HXTR-2001, 15V,25rnA
0,066
0,06
0,07
0,056
D,032
4,8
02
0,2
35
4.4
1.0
0,990
22,7
HXTR-2001, 15 V, 15 mA
0,066
0,06
0,7
0,056
0,032
4.3
0,2
0.2
3.5
4.4
1,7
0,990
22.7
10,6
HXTR-3001, 15 V, 15 rnA
0,117
0,15
007
0,056
0,032
4,$
0.2
02
3.5
4,4
1.7
0,990
22.7
10.6
HXTR-3002, 18 V, 30 mA
0,117
0.19
0,07
0,053
1.03'
5.1
7.2
0,2
5.6
4.7
0,86
0,976
227
108
HXTR-5001, 18 V, 30 mA
0065
0.06
0.07
0053
1,034
51
7,2
0,2
5.6
4.7
0,66
0,976
22.7
10.8
0.105
0.15
0,22
0,18
0,11
17,3
3,1
0,2
1.7
1.4
0.24
0,976
227
10,9
HXTR-6001, 10 V, 4 rnA
0,053
0.05
0.01:1
0,016
0.0055
1,03
0.7
04
78
61
8,6
0990
22.7
12,1
HXTR-7011, 10 V. 10 mA
0,113
0,11
0,07
0,03'
0,017
3.65
0,22
0,13
0,9
2.0
2.6
0,990
16,4
156
49
Fliff4
GENERAL PURPOSE
TRANSISTOR
HEWLETT
~~ PACKARD
2N6679
(HXTR -2101)
Features
HIGH GAIN
-I
1--
01 fO.04) TYP
ED
HERMETIC PACKAGE
_S.310.130)l
r-"":_~
Description
MIN.
+
c:z-t
0.51 10.02)
TYP.
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering 10 seconds each lead)
limit
30V
20V
1.5V
1.07:1:0.3
+250'C
In
Notes:
1. A tlJC maximum of 210'C/W should be used for derating
and junction temperature calculations (TJ = PD x (1JC
Outline HPAC-l00
TCASE).
50
70mA
900mW
300'C
-65'C to
200'C
01 i~~04)
n=IIIIJ1
_
=====~J;;;;;;;;;;;J~====::=J'.....L
L
10.042it 0.0;;,;1:1
eVees
!ceo
leeo
hFe
GT
"
MIL..sTD760
Test Method
,3011.1
nA
3036.1
3076.1"
nA
Mal(.
Typ.
30
3041.1
P1da
Min.
Units
500
100
50
120
dB
9.0
10.5
dBrn
220
18.5
~
~
'"
~
iii
I.
I.
I.
I.
2' _
22
I. !~
I.,.
~
;.-
I. Ii
..
F/
--
10
Vc;li-SV
-f': ,.-
\~.2V
15
20
1
25
30
VS.
4 GHz.
811
Freq. (Utu)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
5000
6500
Mag.
Ang.
(dB)
Mag.
Ang.
0.59
0.58
0.59
0.59
0.60
0.61
0.62
0.63
0.62
0.61
0.60
0.62
0.62
0.62
-66
3O.S
34.S
146
-150
-175
22.1
12.7
6.86
96
173
162
158
146
139
131
123
116
109
103
93
13.3
16.7
11.0
8.9
7.3
5,9
4.8
3.5
2.6
78
64
53
43
4.61
3.53
2.79
2.32
33
22
11
1.96
1.73
1.50
1.35
-9
1.8
1.23
-19
0.9
0.0
1.11
1.02
-28
-37
51
35
40
lel mA)
Ie (mA)
Vel *-'leV
~ 1.-.....
!II
FREQUENCY IGHz)
12
20
12
(d8)
40.0 '
-33.2
-30.5
-28.0
-25.7
-24.2
-22.6
-21.2
.19.7
-18.6
-17.0
-15.9
-15.6
-13.7
812
Mag.
0,01
0.02
0.03
M4
0.05
0.06
0.07
0.09
0.10
0.12
0.14
0.16
0.17
0.20
St.
Ang.
Mag.
Ang.
69
44
51
55
35
55
0.S6
0.51
0.44
0.45
0.44
0.47
0.48
0.52
0.55
0.59
0.65
0.66
0.66
0.87
-18
56
53
50
48
44
36
32
28
27
-32
-39
-49
-60
-67
-79
-84
-93
-102
-113
-123
-131
Bias at
Fli;W
HEWLETT
a:~ PACKARD
GENERAL PURPOSE
TRANSISTOR
HXTR -2102
Features
HIGH GAIN
11 dB Typical at 4 GHz
HERMETIC PACKAGE
BASE
tl
Q.508 (o.n~'D
Description
The HXTR-2102 is an NPN bipolar transistor designed for
high gain and wide dynamic range up to 6 GHz. The device
is manufactured using ion implantation and self alignment
techniques. The chip is provided with a dielectric scratch
protection over its active area.
EMITTEJ
_5.oe(O.~1
TYP.
VellO
Ie
PT
TJ
TSTO
Parameter
Collector to aase Voltage
Collettor to Emitter Voltage
Emitter to aase Voltage
DC Collector Current
Total Device OiS$ipatlon
Junction Temperature
Storage Temperature
Lead Temperature
,Soldering 10 seconds each lead'
Limit
SOV
2()V
1.5V
70mA
900mW
3OO"C
-&\'C to
2oo'C
+250'0
Out/lne HPAC70 OT
Notes:
1. A BJC maximum of 185C/W should be used for derating
and junction temperature calculations ITJ ~ Po x BJC +
TCASEI.
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature Is maintained under TJ '" 200"C I based
on an activation energy of 1.1 eVI. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
52
T..tMelhod
BVCES
. ICEO
lOBO
hFE
ar
1'1da:
Unlta
,,.In.
fVD.
500
nA
nA'
307M'
dB
Max.
30
S011.1'
3041.1'
3036.1
:100
50
13.0
120
15.0.
1.1.0.
220
:<0.0
dBm
18.5
,.,.,.
- ,.
i
30
m 22
3
20
20
16
; . 18
16~-+~~~~~r+~
~ ::~-+~~
i 10f--++++
O'":.'--;O~.'-'-;O:':.'-';O!-:!. U.':'::.O:---f.'.O,..u.-,l'.O:l.=".O:u,~lO.O
FREQUENCV tOHz)
TypicalS-parameters
I'req. (MHz)
100
200
. 300
400
SOO
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
SOOO
5500
SOOO
6500
Mag.
0,63
0.63
0,84
0.64
0.84
0.64
0.64
0.64
0.84
0.64
0,66
0.65
0.67
0.64
0.12
0.69
0.70
0.72
0.70
0.75
0,70
S11
. Ang.
-56
99
-122
-136
-146
153
158
-182
-166
-170
179
172
165
161
156
149
141
136
128
122
119
(dB)
SO,S
28.4
26.1
24.2
22.6
21.2
19.9
18,6
17.8
16.9
13.5
11.1
9,'
7.6
6.4
5.3
4.4
33
2.5
1,7
0.8
521
Mag.
33,4
26,2
20,3
16.2
13.4
11.5
9.9
6.8
7.6
7.0
4.7
3.6
2.9
2.4
2.1
1.8
1.7
1.5
1.3
1.2
1.1
Ang.
149
128
115
107
101
96
92
88
85
83
70
60
50
40
32
22
14
6
-3
-11
-20
53
1d8)
39.2
-35.9
-34.9
-33.6
-32,6
-32.4
-32.0
-31.7
31.4
-SO.8
-29.1
-27.1
-25.7
-24.3
-23.3
-22.6
-21.8
-21.3
20.7
-20.1
-19.6
S12
Mag.
0.011
0.G16
0.018
0,021
0,023
0,024
0.025
0.026
0.027
0.029
0,035
0.044
0,052
0.061
0.066
0.074
0.081
0.085
0.092
0.098
0.105
Sa2
Ang.
62
49
45
42
42
43
43
45
44
46
49
53
55
57
53
48
44
39
34
30
26
Mag.
0,88
0.72
0.61
0.54
0,50
0,48
0.47
0.47
0,48
0.47
0.44
0.46
0.47
0.52
0,51
0.56
0.55
0.58
0.62
0.63
0.70
Ang
16
25
-28
29
-31
-32
-33
-34
34
-35
40
-so
-59
-66
-79
-as
92
-101
-109
-118
-127
LOW COST
GENERAL PURPOSE
TRANSISTOR
Flin-
HEWLETT
~~ PACKARD
HXTR-31Dl
Features
HIGH GAIN
19.5 dB Typical at 1 GHz
LOW NOISE FIGURE
1.8 dB Typical FMIN at 1 GHz
LOW COST HERMETIC PACKAGE
Description
The HXTR-3101 is a low cost NPN bipolar transistor
designed for high gain and wide dynamic range up to 4000
MHz. To achieve excellent uniformity and reliability, the
manufacturing process utilizes self-alignment and ion
implantation techniques. The chip is provided with a dielectric scratch protection over its active area.
The HXTR-3101 is supplied in the HPAC-100X, a rugged
metal/ceramic package, and is capable of meeting the
environmental requirements of MIL-S-19500 and the
electrical test conditions of MIL-STO-750.
C----0.55
aUI
TYP.
Paramaler
VCBa
VCEO
VEao
Ie
PT
TJ
TSTG
~O=.,===:!;;~~=
= 25' C)
Symbol
IL
Value
1OO41
TYP.
:JOV
l8V
1.5V
SOmA
600mW
300'C
--6S'Cto150'C
Outline HPAC-100X
In
Notes:
1. A ~)JC maximum of 180' C/W should be used for derating
and junction temperature calculations (TJ = Po x t)JC +
TCASEI.
2. A MTTF of 1 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200 0 C (based
on an activation energy of 1.1 eV). For operation above this
54
(.
./
MIL..s1'tl-761l
Tett MtIIiod .
3001.1"
Symbol
BVoso
lceo
3036.,
hFE
3076,,'
IT
1821e1 2
FMIN
Min.
Typ.
Male.
30
SOC
nA
180
50
GHz
dB
dB
15.0
1.8
dB
19.5
3246.1
MAG
*300
IJnJta
\
i\\!'...
\ .........
,
I
42!S
2~
~
JlOtI<
FREQUENCY (GHz)
to
t5
20
25
Ie (rnA)
Ie (mAl
100
300
500
800
1000
1500
2000
3000
4000
521
Mag.
0,705
Ang.
0.606
-110
-'39
-162
-169
174
161
143
125
-so
0.565
0.559
0,571
0.574
0,591
0.619
0.639
(dB)
27.7
23.5
20.1
16,5
14.5
11.2
8.9
5,7
3.4
Mag.
24,266
14.962
10.116
6.683
5.330
3,627
Ang.
149
116
101
89
78
63
2.774
49
1.936
25
1
(dB)
29,5
24.5
20.7
17.1
15,1
11.6
9.4
M'II
1,488
(dB)
-31n
-30.4
-28.9
-27.4
-25.7
-23.6
-21.9
-18.8
-18.2
512
Mag.
0,015
0.030
0.036
0.D43
0.052
0.066
0.080
0.115
0.155
B22
Ang.
Mag.
0.903
0.824
0.499
0.430
0.408
Ang.
48
0.:394
48
0.:392
0.427
0.470
-48
-57
-81
-107
60
43
41
43
44
45
39
-20
-36
-40
-41
-43
(VCE = 10 Y. Ic = 15 rnA)
Sf1
Freq. (MHz)
Mag.
100
300
500
800
1000
1500
2000
0.641
0,565
0.551
0.553
0,560
0,564
0.583
0.611
0.633
3000
4000
~1
Ang.
-60
-122
-149
-168
-115
171
159
142
124
6.3
4.0
29.854
18.788
10.839
7.161
5.709
3.869
2,955
2.058
1.587
B22
8t2
Ang.
144
112
98
87
77
62
49
26
2
(dB)
-37.6
-31.8
-30.1
-28,1
-26.4
-23.6
-21.6
-18.4
-15.9
Mag.
0.013
0.026
0.0:31
0.0:39
0.046
0.066
0.083
0,120
0.160
Ang.
57
44
44
SO
49
54
52
47
39
Mag.
0.863
0.556
0.444
0.367
0.363
0.356
0.354
0.389
0.431
Ang.
-23
-38
-40
-41
-42
-47
-56
-81
106
55
~~~-"-
--~~~,,-"'
~-----------~~~~
30
LOW COST
LINEAR POWER
TRANSISTOR
Flidl
HEWLETT
~~ PACKARD
HXTR3102
Features
HIGH OUTPUT POWER
21 dBm Typical P1dB at 1 GHz
HIGH P1dB GAIN
11.5 dB Typical G1dB at 1 GHz
LOW COST HERMETIC PACKAGE
Description
The HXTR-3102 is a low cost NPN bipolar transistor
designed for high linear output power and high gain up to
4000 MHz. To achieve excellent uniformity and reliability,
the manufacturing process utilizes self-alignment and ion
implantation techniques, The chip is provided with a dielectric scratch protection over its active area and TIl2N emitter
ballast resistors,
The HXTR-3102 is supplied in the HPAC-100X, a rugged
metal/ceramic package, and is capable of meeting the
environmental requirements of MIL-S-19500 and the electrical test conditions of MIL-STD-7S0.
r
_
VCEO
Veao
Ic
Pr
TJ
TSTG
TYP.
rb
C=::::::!=-1I;;l;;k;=======_
I LO.1
IT CASE = 25 C)
Symbol
0,5$
!.022)
(,004)
TYP.
Value
Parameter
Collector to 8ase Voltage
Collector to Emitter Voltage
Emitter to 8ase Voltage
DC Collector Current
Total Device DisSipation
Junction Temperature
Storage Temperature
35V
25V
3,5V
lOOmA
100mW
300C
...,soC to 150C
In
Outline HPAC100X
per-
Notes:
1. A 0JC maximum of 165 C/W should be used for derating
and junction temperature calculations IT J = PD X 0JC +
TCASEI.
2. A MTTF of 3.5 x 106 hours will be met or exceeded when the
junction temperature is maintained under TJ
125 0 C (based
56
Symbol
Param~ler$
BVe80
100}JA
= 20 V
leBo
hFE
IT
IS21.12
Unlta
3001,'-
3036,1"
nA
Max.
200
GHz
at VeE'" 15 V, Ie = 30 rnA
Typ.
35
15
3076.1'
= 15 V, Ie = 30 mA
Min.
75
dB
111.5
P'd8
dBm
21,0
G'de
dB
15,0
JOr------r-------,
VeE'" 15V
1c4'-30mA
lc(mA)
FREOUENCY (GHz)
$11
Freq, (MHz)
100
300
500
800
1000
1500
2000
3000
4000
(VeE
FREQUENCY (GHzj
= 15 V,
Ie
Mag,
Ang.
(dB)
Mag.
Ang.
(dB)
0.767
0,699
0,620
0,556
0,546
0,523
0.513
0,534
0,546
-19
-52
18,9
17,7
16,1
165
143
126
109
-3M
-27.0
13.8
8.610
7,674
6,363
4,898
12.7
4,317
95
9,9
7,9
5.1
3,0
3.143
2.475
1.792
1.412
74
57
30
4
$21
Mag.
Ang,
-79
-110
-126
-155
-177
156
132
$11
Mag.
Ang,
(dB)
100
300
0,777
0.694
0,606
0,538
0.535
0513
0.508
0532
0,546
-21
197
18,3
16.4
n9
12,7
9,8
7,7
4,8
2,7
500
500
-22.2
-21.0
-20.2
-19,7
-17.8
-15,6
S 2
Ang.
72
Mag.
Ang.
-10
-25
-35
-40
-45
0.129
0.166
31
29
0,985
0,892
0,783
0:854
0,598
0,525
0.489
0.495
0,522
$12
Mag.
An\}.
Mag.
Ang.
71
58
48
40
34
0.965
0,874
0.757
0,630
0,580
0,518
0,488
0,500
0.527
-10
-27
-36
-40
-44
-53
-62
0.016
0,045
0,063
0.Q78
0,089
0,098
0,103
60
50
41
34
30
29
-55
-63
-85
-109
= 30 mAl
Freq, (MHt)
1000
1500
2000
3000
4000
-24,0
$12
Mag.
-57
-85
-116
-131
-159
-180
153
130
9.661
8.222
M07
4,955
4,296
3,086
164
139
122
105
92
72
55
2.415
1,740
1,362
28
57
(dB)
-35,9
-27,1
-24,4
-22.7
-21,4
-20.4
-19,8
-17,8
-15.5
0.016
0,044
0,060
0,073
0.085
0,095
0.102
0,129
0,167
$22
32
31
33
29
-84
-108
rli~ HEWLETT
.:~ PACKARD
GENERAL PURPOSE
TRANSISTOR
2N6838
(HXTR-3103J
Features
GUARANTEED NOISE FIGURE
2.3 dB Maximum FMIN at 1 GHz
HIGH GAIN
13.5 dB Minimum IS21EI2 at 1 GHz
HIGH GAIN BANDWIDTH PRODUCT
7.0 GHz Typical fy
WIDE DYNAMIC RANGE
LOW COST HERMETIC PACKAGE
Description
The HXTR-3103 is an NPN bipolar transistor designed for
high gain and wide dynamic range up to 5 GHz. The device
utilizes ion implantation and self alignment techniques in its
manufacture. The chip is provided with a dielectric scratch
protection over its active area.
The HXTR-3103 is supplied in the HPAC-100X, a rugged
metal/ceramic package, and is capable of meeting the
environmental requirements of MIL-S-19500 and the test
requirements of MIL-STO-750/883.
Parameter
Vcao
Vello
VEW
Ie
PT
TJ
TSTG
Value
SOV
laV
1,5V
SOmA
600mW
300'C
-<15C to
150'C
QuIUn. HPAC.100X
Notes:
1. A (-)JC maximum of 180' C/W should be used for derating
and junction temperature calculations IT J = Po x (-)JQ +
TCASEI.
58
SymbOl
avcso
Units
3001.1'
30
16
BVceo
3011.1"
Iceo
3036.1"
IlA
ICEO
3041.1
hf!
3076,1"
tr
ISlItEI'
FMlN
F(50JII
ryp.
MIn.
,50
,100
50
160
GH~
5.0
7.0
dB
13.5
15.0
dB
1.1
f=1oooMHz
dB
f=500MHz
dB
2.1
"- 1.7,
3246,1
P'dS
dBm
16.0
GldS
dB
16.0
Cl~
pF
Mtx.
0.33
fC'5mA
iii
E
~
:!!
":Ii'"
~.
..:
,
.r
iN
~
j
FREQUENCY (GHz)
20~------_4------------__4
10r--------1------~~--~
FREQUENCY (GHz)
IC{mA)
wr--------,------------~
VeE = lOY
!C. lamA
Typical Noise
Parameters
20~--~.-_1------------__4
Freq.
FMIN
(GH:t)
(dS)
.5
L4
1.0
2.0
1.1
3.0
4.0
FREQUENCY IGHz)
Ie (rnA)
59
2,5
3.3
4.2
Mag.
ro Ang
.121
.301
.461
.553
.648
96
121
173
157
-139
Rn
(ohms)
114.4
15.2
5,2
SA
13.4
Typical S-Parameters
(VCE=10V.lc=10mA)
811
Mag.
Mg.
(dB)
100
.70
-50
27.7
200
300
.64
-86
25.6
.60
-110
-127
-139
-149
-157
-162
23.5
21,6
20.1
18,7
17.5
~168
174
162
153
15,5
14.5
11.2
8.9
7.2
143
5.7
134
125
4.5
Freq. (MHa)
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
.57
.56
.55
56
.55
.55
-169
.57
.57
.59
.61
.61
,65
.63
Typical S-Parameters
16.5
3,5
$22
$12
821
Mag.,
Mg.
149
24.26
19.05
14,96
12,02
10.11
8,61
7.49
6,68
5.95
5.33
3,62
2.77
2,28
1.93
1.67
1.48
129
116
108
102
97
9~
89
85
78
63
49
37
25
13
1
(dB)
Mag.
Mg.
Mag.
Ang.
-36.7
-32,2
-30,4
-29.6
-28.9
-28,5
-27.9
27.4
-26.9
-25,7
-23,6
-21.9
-20.4
-18,8
-17,5 '
-16.2
.015
.025
,030
.033
,036
60
.90
49
,74
.62
,54
.49
.46
-20
-31
-37
38
-40
-40
-42
-42
-43
-40
-48
-57
-71
-81
-94
-107
.038
.040
.043
.045
.052
.066
.080
,096
.115
,134
.155
43
41
41
42
43
44
46
42
48
48
48
45
.44
.43
.41
.40
.39
.39
.39
43
39
.42
.42
.47
(VCE =V 10 V. Ic = 15 mAl
522
812
$21
511
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
100
200
300
400
500
600
700
,64
.013
.021
.026
,029
.031
,033
.037
,039
.043
,048
,066
.083
.100
,120
,139
.160
43
900
1000
1500
2000
2500
-37.6
-33,4
-31.8
-30.9
-30.1
-29.5
-28.7
-28,'
-27,4
-26.4
-23,6
-21,6
-20.0
18.4
-17,1
-15.9
.86
.67
.54
29,85
22.13
16.78
13.18
10.83
9.22
8,03
7,16
6,38
5.70
3.86
2.95
2.42
2.05
1,78
1.58
57
47
44
.54
29.5
26.9
24.5
22,4
20.7
19.3
18.1
17.1
16.1
15,1
11.8
9.4
7.7
6.3
5,0
4.0
144
BOO
-60
-98
-122
-138
-149
-157
.164
-168
-173
-175
171
159
151
142
133
124
.48
.44
,41
.39
.38
.37
.36
.35
.35
Freq. (MHa)
3000
3500
4000
.58
.56
,54
.54
.53
.54
.56
,56
.58
,61
,61
,64
.63
124
112
104
98
94
90
87
84
77
62
49
38
26
14
2
60
44
47
49
50
52
49
54
52
51
47
44
39
.55
.35
.38
.38
.43
Ang.
-24
-34
-38
-39
-40
-40
-41
-41
-42
39
-47
-56
-70
-81
94
-106
LINEAR POWER
TRANSISTOR
rli~ HEWLETT
~~ PACKARD
2N6839
(HXTR-3104)
Features
HIGH OUTPUT POWER
19.0 dBm Minimum P1dB at 1 GHz
HIGH PldB GAIN
14.0 dB Minimum GldB at 1 GHz
HIGH GAIN BANDWIDTH PRODUCT
5.5 GHz TYPICAL iT
LOW COST HERMETIC PACKAGE
Description
The HXTR-3104 is an NPN bipolar transistor designed for
high output power and gain up to 4 GHz. Ion implantation
and self alignment techniques are used in its manufacture
to produce excellent uniformity and reliability. The chip has
a dielectric scratch protection over its active area and a
T82N ballast resistor for ruggedness.
The HXTR-3104 is supplied in the HPAC-l00X, a rugged
metal/ceramic package, and is capable of meeting the
environmental requirements of MIL-S-19500 and test
requirements of MIL-STD-750/883.
= 25 C)
Symbol
Parameter
VC60
TJ
TSTG
Storage Temperature
VeEO
V.eo
Ie
Pr
t
reo.,
I L...!:.
Value
35V
25V
OO41
lYP,
35V
100mA
700mW
300'C
--65 C to
150C
'Operation in excess of anyone 01 these conditions may result in permanent damage to this device
Notes:
Outline HPAC-100X
TCASEI.
61
'
...
.MILITDTao
Teat Melhod . Unitt
. Symliol
BVeBo
eVeso
BVESQ
lOBO .
lOA
3026."
.IOEO.
'hFE
.3001.1' .
3011. ,.
IT
/S21E12
F;<lB
35.
24
3.$
3036.""
nA
3041.1
nA
>Ma
Typ,
50
75
15
3076.1'
Ie" 30 mA
Min.
75
GHz
' 4:0
s.s
dB
10.5
12.5
dem
19.0
21.0
dB
14.0
16.0
Vee"15V.le=3OmA
Associated 1 de Compressed Gain at 1000 MHz
Vee'" 15 V. Ic '" SO mA
Reverse Transfer Capacitance
Ie = 0 m'A; VeE'" 10V, f .. 1 MHz
G'dB
em,
!
'2
iii
'i
"to
,"
."
-"w
II
o
o
500
1500
2000
3000
4000
Mag.
Ang.
0.76
0.69
0.62
0.55
0,54
0.52
0.51
0.53
0.54
-19
52
-79
110
126
-155 .
-177
(dS)
18.9
17.7
16.1
13.8
12.7
9.9
7.9
156
5.1
3.0
132
Typical S-Parameters
100
300
500
800
1000
1500
2000
3000
4000
Mag.
0.1]
0.69
0.60
0.53
0,53
0.51
0.50
0.53
0.54
\J
1\
l~c.i.v._
lJ '11
10
3V\
1r+
2
40
20
50
O!:-o3-.L4-!.5,-L.L.J..u..--,~--!-,-L....L.J
FREaUENCY (GHz)
Ang.
21
57
-85
116
131
159
180
153
130
vs. Current
8 21
Mag.
a.Sl
7.67
6.38
4.89
4.31
3.14
2.41
1.79
1.41
Allg.
(dB)
8 12
Mag.
165
143
126
109
95
74
57
30
-36.0
-27.0
24,0
'22,2
-21.0
-20.2
19.1
17.8
-15.6
0.016
0.045
0.063
0.076
0.089
0.OS8
0.10S
0.129
0,166
~2
Ang.
Mag.
Ang.
72
60
50
41
34
30
0,96
-10
25
35
-40
0.52
-45
-55
29
0,48
0,49
052
-85
lOS
31
29
0.89
0,78
0,65
0,59
-63
rVcE=15V,lc=30mAI
8 11
Freq. (MHz)
,VCE=15V, ic=20mA'
$11
800
1000
'\
Typical S-Parameters
800
l"'-.
'\. 5V
\1
\ J
OV
lclmAJ
100
I 1\ i
0.36
Vel!,'" 5-20V
i'
, i
FREQUENCY (GHzJ
Freq.(MH~
.....
.~ ~
OJ
:s
~
pF
8 21
Mag.
4.29
Ang.
164
139
122
105
92
9.8
$,08
72
7.7
4.8
2.7
2.41
55
1,74
28
1.38
(dB)
19.7
18.3
16,4
13,9
12.7
9.66
8.22
6.60
4.95
62
(dS)
035.9
-27.1
-24.4
-22.7
-21.4
-20.4
'19.8
-17.8
-15,5
8 12
Mag.
0.016
0.044
0.060
0.Q73
0.085
0.095
0.102
0,129
0.167
8 2
Ang.
71
58
48
40
34
32
31
33
29
Mag.
0.91)
0.87
0,75
0.63
0.58
0.51
Ang.
10
27
-36
40
-44
-53
0.48
62
0.50
0.52
-10e
-84
LOW COST,
LOW NOISE
TRANSISTOR
Flin-
HEWLETT
a!~ PACKARD
HXTR-3615
Features
:. "
Description
The HXTR-3615 is a low cost NPN silicon bipolar transistor. Designed to provide low noise, high gain, and wide
dynamic range performance for VHF, UHF, and microwave
applications. This device is manufactured using ion
implantation and self alignment techniques and the transistor chip has a dielectric scratch protection over its
active area.
The HXTR-3615 is supplied in the HPAC-100X, a rugged
metal/ceramic package, capable of meeting the
environmental requirements of MIL-S-19500 and the
electrical test conditions of MIL-STD-750.
Pram<lter
VeBo
Veeo
Veao
Ie
PT
TJ
TSTG
Value
25V
16 V
1.5 V
55mA
500mW
300"C
Outline HPAC1OQX
~5Ct0150C
Notes:
1. A eJ'c maximum of 170' C/W shoL>ld be used for derating
and junction temperature calculations (TJ = Po x eJC +
TCASE),
2. A MTTF of 1 x 7 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200'C (based
on an activation energy of 1.1 eV). For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors':.
63
~~---~~
----------
MIL-$TO-7SO
Symbol
BVello
Te$tMelhod
=100 pA
Unitt
3001;1'
II
Min.
'25
16
aVeEo
lcao
3011.t'
3036,1'"
10EO
3041.1
hFE
3076.1'
fT
FMIIII
100
nA
100
180
50
GHz
f= SOOMHz
f=1000MHz
f =2000 MHz
MHz
500 MHz
f= 1000 MHz
f= 2000 MHz
1=4000 MHz
3246.1
5
1,3
dB
1.4
2.0
'=4000
Go
,=
A$S()Clatad Gain
VCE'" 10V, ie-lOrnA
3.5
GldS
C12E
f=
dB
21.S
dBm
16.6
12.0
7.0
19.0
dB
19.0
pF
0.3
$246.1
at 1000 MHz
PldS
Mn
1 MHz
a:
::>
"u:
IIIOISE FIGURE
IFMIIII
'"(5z
~~.5-L-L-L~1.0~------~2,0~--~3.~0~4.~
%~.I~~0.~2~0.~3-L~LLU1~.0~~2f.0~~4.0
FREQUENCY (GH,)
FREQUENCY (MH,)
18
VCE = 10 V. Ic = 10 rnA
16
FtlNIlIen1IY
(M~)
SOO
1000
2000
4000
"MIN
(dB)
~lWi
Mllg.
1.3
1.3
(50 ('l)
1.4
2.0
1,6
0.20
135
2.4
0.39
-177
4,7
3.S
4.4
0.54
-116
18.1
fo
Rn
Ang.
)ov
16V
14
(Ohms)
15.4
0
8
,
~
1/
~5V
(V~2V-
'r\.
IV
6
4
10
15
20
25
30
64
Typical S-Parameters
(VeE
= 10 V,
$11
Freq. (MHz)
joo
200
300
400
500
500
100
600
900
1000
1500
2000
2500
3000
3500
4000
5000
5000
Ang.
-43
16
-103
O.SS
119
-132
-141
149
-156
-162
0,52
-168
0.53
0.50
0.54
0.55
0.60
0.61
0.72
0.81
172
155
142
0.53
130
117
108
90
76
(dS)
21.6
25.9
24.1
22.4
20.9
19,6
18A
100
200
300
0.59
0.57
400
500
600
0.55
0.64
0.54
700
800
9oo
1000
1500
2000
2500
3000
O,SS
3500
4000
5000
6000
0,63
0.52
0.52
0,52
0.51
0,54
0.56
0.61
0,62
0,74
0,63
$12
Mag.
23.92
19.63
15.94
13.22
11.11
9.52
8,$0
17.4
16.4
15.6
12,2
5.4
4.3
(dS)
-35.9
-33.2
Mag.
Ang.
0.02
sa
0.02
121
-31A
70
53
112
105
-30.2
-28,6
99
-26.4
-26,4
0.03
0.03
0.04
0.04
0.04
6.00
86
63
4.09
67
3,11
54
2.53
2,14
1,87
43
32
20
10
2.6
1.63
1,35
-10
1.2
1.15
29
(VeE
= 15 V,
Ie
-28.0
-27,3
2M
-24.7
-22,7
-20.8
-19.0
-17.4
-16.0
-13,4
-11.2
-56
-,93
-116
131,
-143
-152
158
-165
-170
-175
187
152
139
127
115
106
89
75
0.04
0,04
0,05
52
46
49
50
49
51
SO
0.06
55
0.Q7
0,09
58
0.11
0,14
0,16
0.21
0,27
59
56
56
52
43
32
Mag,
0.92
0.81
0.70
0.64
0,59
Ang,
-14
0.5S
0.55
0,53
-32
-23
28
30
-32
32
-32
-32
0.52
0.50
0,47
O.SO
0.47
-34
-41
-45
'0
-55
-64
OA9
0,47
-71
-as
0.49
0.44
0.44
-105
-134
= 18 rnA)
512
821
. Ang.
822
Ang.
155
136
94
89
7.37
6,61
9.8
8.1
6,6
$'1
Mag.
0.62
= 10 rnA)
$21
Mag.
0.S7
0.63
0.59
0.57
0.57
0.55
0,54
Typical S-Parameters
Freq. (MHz)
Ie
(dB)
29,3
Mag.
29.17
27.1
24.9
23,0
21.3
20,0
18.7
17,6
16.6
15.8
12.4
10,0
22.60
17,66
14.14
11.65
9.96
8.57
7.57
6.78
6.18
4.16
3.16
8.2
2.57
6,7
5.5
4.4
2,7
2,17
1.89
1.66
1.36
1.3
1.16
Ang.
148
129
115
(dB)
-40.0
107
100
95
91
66
83
79
65
53
42
30
19
8
12
-31
65
622
Ang.
-35,4
Mag.
0.01
0,02
-34,0
0.02
50
-31.7
-32,0
-30,8
-30,0
-29,1
0.03
0.03
0.03
0,03
0.04
0.04
0,04
0.05
0.07
0,09
0.11
0,13
0.15
0.21
0,27
55
-28.6
-27.7
-25,5
-23.2
21.3
-19.3
-17.8
-16.3
-13.6
-11.4
69
66
47
48
51
52
57
57
59
63
64
62
59
55
45
34
Mag.
0.90
0.77
0,67
0.62
0.58
0,66
0.55
a.54
0.53
0.52
0.50
0.52
0.50
0.52
0.50
0.52
0.47
0,46
Ang.
-16
23
26
28
28
27
-28
-29
-28
29
-37
42
51
-61
-68
-80
-102
-130
Fli;'
HEWLETT
~~ PACKARD
LOW COST,
HIGH PERFORMANCE
TRANSISTOR
HXTR-3645
Features
GUARANTEED NOISE FIGURE
2.2 dB Maximum FMIN at 2 GHz
GUARANTEED ASSOCIATED GAIN
12.2 dB Minimum Ga at 2 GHz
HIGH OUTPUT POWER
19.0 dBm Typical PldB at 2 GHz
HIGH PldB GAIN
13.5 dB Typical GldB at 2 GHz
HIGH GAIN BANDWIDTH PRODUCT
6.0 GHz Typical IT
LOW COST HERMETIC PACKAGE
Description
The HXTR-3645 is an NPN silicon bipolar transistor
designed for use in low noise wide band amplifier or
medium power oscillation applications requiring superior
VHF, UHF, or microwave performance. Excellent device
uniformities, performance, and reliability are produced by
the ion implantation and self alignment techniques Used in
the fabrication of these devices. The transistor chip has a
dielectric scratch protection over its active area.
The HXTR-3645 is supplied in the HPAC-l00X, a rugged
hermetic metal-ceramic package, capable of meeting the
environmental requirements of MIL-S-19500 and the test
requirements of MIL-STD-750/883.
DIMENSIONS IN MILLIMeTERS (INCHES)
Synlbol
Parjlllleter
Vcso
VCEO
VEBO
Ie
Pr
TJ
TSTG
Operatlon
In
O\rtline HPAC-100X
Value
sov
18 V
1.5V
85mA
600mW
3OO'C
-65'C 1015O'C
Notes:
1. A ~)JC maximum of 170' C/W should be used for derating
and junction temperature calculations (TJ = Po x 8JC +
TCASE).
2. A MTTF of 1 x 107 hours will be met or exceeded when the
junction temperature is maintained under T J = 200' C (based
on an activation energy of 1.1 eV), For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
66
Symbol
eVeso
BVeeo
leBO
leEO
ilfE
fr
fMIN
ASSOciated Gain
Vee = 10 V, Ie "" 10 mA
G.
3001.1'
3011.1'
3036.1"
3041.1
3076,1
GlOB
Min.
V
V
nA
30
18
TVp.
50
175
55
GHz
6.0
3246.1
dB
1.2
1,2
1.4
1.7
f= 500 MHz
3246,1
dB
22.S
dBm
17,5
14,6
13.0
19,0
de
13.5
12.2
VCE=15V.tc~16mA
C'2E
f=
pF
1 MHz
0,27
10~--------+---~--------~
~
w
a:
"u:"
NOISE FIGURE 1
oL--L~~~~_______~(PM~IN~)_~O
0.5
1.0
2.0
a"'z
~",'---0'-.2-0-'.3-'-:"0'::.5-'--='0.""7'-'-",'00- - - : :2'0.0--='3.0
3.0
FREQUENCY (GHz)
FREQUENCY (GHz)
10
10V
5V
z
;r
a:
3V
"~
u
"
""u:
"-
I-
'"a
'"
'"'"
"
0~-~--7'0~-7.'5~-2~0~--~25~~30
COLLECTOR CURRENT (rnA)
VCE~10V,
67
Max.
50
nA
f= 500 MHz
f~ 1000 MHz
f = 1500 MHz
f = 2000 MHz
Pldll
Unit.
1,9
~r--------r-------------~
1IcI\'15V
1e18mA
VeE = 10 V, Ie = 10 rnA
Frequency
ro
(111Hz)
FMIII
(dB)
Fsoo
(dB)
Mllg.
500
1.2
1.2
(Sam
1000
1.2
1.3
0.20
135
7.3
2000
1.7
2.0
0.39
-177
2,2
Ang.
25~-------+-------------4
Rn
(ohm$)
0
10~-------+-------------4
~~.5~~O.7~70.791~.O~------2~.O~--~3.0
FREQUENCY (GHz)
(VeE = 10 V. Ie = 10 rnA)
8'1
Freq.(MHz)
Mag.
Ang.
(dB)
100
200
300
400
0.67
0.63
0.59
0.57
0.57
0.55
0.54
0.53
0.53
0.52
0.53
0.50
-43
-78
-103
-119
-132
-141
-149
-158
-162
-166
172
155
142
130
116
106
27.6
25.9
24.1
22.4
20.9
19.6
18.4
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
0.54
0.55
0.60
0.61
17.4
16.4
15.6
12.2
9.8
8.1
6.6
5.4
4.3
~
Mag.
$22
$12
23.92
19.63
15.94
13.22
11.11
9.52
Ang.
(dB)
155
136
121
-35.9
112
105
99
8.30
94
7.37
6.61
86
89
83
67
54
43
6.00
4.09
3.11
2.53
2.14
1.87
1.63
32
20
10
-33.2
-31.4
-30.2
28.6
-28.4
-28.4
-28.0
-27.3
-26.4
-24.1
-22.7
Mag.
0.02
0.02
0.03
0.03
0.04
0.04
0.04
0.04
0.()4
-19.0
-17.4
-16,0
0.05
0.05
0.07
0.09
0.11
0.14
0.16
(dS)
812
Mag.
-2O.S
Ang.
aa
70
53
52
46
49
50
49
51
50
55
58
59
Mag.
Ang.
0.92
0.81
0.70
-23
0.64
0.59
0.56
0.55
0.53
0.52
0.50
0.47
0.50
56
52
0.47
0.49
0.47
0,49
Ang.
Mag.
0.01
0.02
0.02
69
0.03
0.03
55
0.90
0.77
0.87
0.52
58
.14
-26
30
-32
-32
-32
-32
-32
-34
-41
-45
-55
-64
-71
-83
811
Freq. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
Mag.
0.82
0.59
0.57
0.55
0.54
0.54
0.53
0.53
0.52
0.52
0.52
0.51
0.64
0.56
0.61
0.62
Ang.
-58
-93
-116
-131
-143
-1$2
-158
-165
-170
-175
167
152
139
127
115
106
(dB)
Mag.
29.3
27.1
24.9
23.0
21.3
20.0
lB.7
29.17
22.60
17.66
11.6
16.6
15.8
12.4
10.0
8.2
6.7
5.5
4.4
Ang.
148
129
115
101
100
14.14
11.65
9.96
8.57
7.57
6.78
6.16
4.16
3.16
2.57
2.17
1.69
1.66
95
91
86
-35.4
-34.0
-31.7
-32.0
-30.8
-3(W
-29.1
0.03
0.03
0.04
0.04
0.04
63
-28.6
79
-27.7
65
53
42
-25.5
-23.2
-21.3
-19.3
-17.8
0.05
-16.3
0.15
30
19
8
68
-40.0
0.07
0.09
0.11
0.13
66
50
47
48
51
52
57
57
59
63
64
52
59
55
0.58
0.56
0.55
0.64
0.53
0.52
o.sO
0.52
0.50
0.52
0.50
0.52
822
Ang.
18
-23
-26
-26
-2S
':;'7
':;'8
-29
-28
-29
-37
-42
-51
-81
-88
-80
Flio-
HEWLETT
~~ PACKARD
LOW COST,
HIGH PERFORMANCE
TRANSISTOR
HXTR-3675
Features
GUARANTEED NOISE FIGURE
3.4 dB Maximum FMIN at 4 GHz
GUARANTEED ASSOCIATED GAIN
7.7 dB Minimum Ga at 4 GHz
HIGH OUTPUT POWER
17.5 dBm Typical PldB at 4 GHz
HIGH PldB GAIN
8.4 dB Typical GldB at 4 GHz
HIGH GAIN BANDWIDTH PRODUCT
6.0 GHz Typical IT
LOW COST HERMETIC PACKAGE
Description
The HXTR-3675 is an NPN silicon bipolar transistor
designed for use in low noise wide band amplifier or
medium power oscillation applications requiring superior
VHF, UHF, or microwave performance. Excellent device
uniformities, performance, and reliability are produced by
the ion implantation and self alignment techniques used in
the fabrication of these devices. The chip is provided with
scratch protection over its active area.
0.55
1-i.~::'~~8j*r DIAl
.t,1: 0.1
{.OS). ,01)41
__~
1.0221
I,
[
i ---;-T_VP_._ _ _ _
to.,
tic.
'::::Y=I=T=:!i
1.071)
J l
MAX.
t(04)
TYP.
= 25 C)
DIMENSIONS IN MILLIMETERS {lNCHESI
Symbol
Parameter
Vcao
Vcw
Veso
Ic
PT
TJ
TSTG
Value
30V
18V
1.5V
60mA
600mW
3000
-65"C to
+150C
Outline HPAC-l00X
Notes:
1. A 0JC maximum of 170C/W should be used for derating
and junction temperature calculations (T J = Po x 8JC
TCASEI.
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200 0 C Ibased
on an activation energy of 1.1 eVI. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors",
69
1.8
Symbol
8Veeo
Unlll
8VOEO
=100 MA
Colletor~Emltter i3reakdown Voltage at Ie =15 mA
leBo
3036,1'-
nA
ICED
3041.1
nA
hFa
IT
3078,'
I"MIN
3001,"
3011."
18
Mall.
50
50
175
56
6.0
dB
1.2
f .. 1000 MHz
Associated Gain
Vea=10V,lc"'10mA
3246.1
1,;
2:8
PldB
GldB
C12E
t=
di3
17.7
13.0
8.3
3246.1
1=2000 MHz
f=4000MHz
30
GH~
Typ.
Min.
7.7
1 MHz
dBrn
\7,5
di3
8A
pF
0.29
25
r---....
20
iii
:l!
z
<i'
c
z
"c
"
UJ
"'-
!;(
u
0
15
10
~
~
"
""
~ f"-.,.,
"""'0
1.0
1.5
2.0
3.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
7.0
25
6.0
iii
5.01--------t--:=-=:-=::--I 20
:2
15
fil"
10
"U
!il
"
;;
UJ
a:
:0
'"u:
UJ
'"~
>0
Figure 4. TypicallS21EI2
4000 MHz.
70
VS.
Current at
Frequen/IY
(MHll
FMIN
(d&)
"sou
(d&)
GMIN
(dB)
1000
1.2
2000
4000
1.8
1.3
2.0
13.0
Mag.
0.2
0.4
2.8
4.1
8.3
0.6
17.7
ro
Ang.
An
(ohms)
-117
6.5
2.9
-117
21,5
135
FREQUENCY (OHzl
Typical S-Parameters
(VeE = 10 V, Ie = 10 rnA)
$11
Fnl<l. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
43
-78
-lOS
-119
-132
-141
-149
-156
-162
-168
172
155
142
130
118
108
96
90
053
0.53
0.52
0.53
0.50
0.54
0.55
0.60
0.61
0.68
0.72
0.76
0.81
0.78
SO
76
69
Typical S-Parameters
(dB)
27.6
25.9
24.0
22.4
20.9
19,6
18.4
17.4
16.4
15.6
123
9.8
8.0
6.4
5.6
4.1
3.5
2.9
2.3
0.8
02
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4()OO
4500
5000
5500
6000
6500
Mag.
0.62
0.59
0.57
0.55
0.54
0.54
0.53
0.53
0.52
0.52
0.52
0.51
0.54
0.56
0.61
0.62
0.69
0.74 .
0.77
0.83
0.78
Ang.
-56
-93
116
-131
-143
-152
-158
165
-170
-175
167
152
139
127
115
106
94
88
78
75
67
$22
Mag.
Ang.
Mag.
Ang.
Mag.
23.9
19.6
15.9
13.2
lU
9.5
155
136
121
112
105
99
94
89
86
83
67
54
43
0.02
66
0.92
0.81
0.70
0.64
0.59
0.56
0.55
0.53
052
0.50
0.47
0.50
0,47
8.3
7.4
6.6
6.0
4.1
3.1
2.5
2.1
1,9
1.6
1.5
1.4
1.3
1.1
1.0
32
20
10
-1
-10
-20
-29
-37
0.02
0.03
0,03
0.04
0.04
0.04
0.()4
0.04
0.05
0.06
0.Q7
0,09
0.11
0.14
0.16
0.19
0.21
0.25
027
0.29
70
53
52
46
49
50
49
51
50
55
58
59
58
56
52
48
43
36
Ang.
-14
-23
28
30
32
-32
-32
32
-32
-34
41
-46
-55
-64
-71
-63
-89
-105
-116
134
-148
0,49
32
0,47
0.48
0.47
0.44
0.46
0.44
26
0.50
Mag.
Ang.
Mag.
om
69
66
50
55
0.90
0.77
0.67
0.62
0.58
0.50
0.55
0.54
0.53
052
0.50
0.52
0.50
0.52
0.50
052
0.50
(VCE = 15 V. Ic = 18 mAl
$11
Freq. (MHl:)
$,2
$21
Ang.
Mag.
0.67
0.63
0.59
0.58
0.57
0.55
0.54
(dB)
29.3
27.1
25.0
23.0
21.3
20.0
18.7
17.6
16]
15.9
12.5
10.1
8.3
6.9
5.6
4.6
3.5
2.9
2.3
1.6
0.1
512
521
Mag.
Ang.
148
129
115
107
100
95
91
86
29.2
22.6
17.7
14.1
11.6
10.0
8.6
7.6
6.8
6.2
83
79
4.2
3.2
2.6
2.2
1.9
1.7
1.5
1.4
65
53
42
30
19
8
-2
-12
-22
-31
-39
1.3
1.2
1.0
71
0.02
0.02
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.05
0.07
0.09
0.11
0.13
0.15
0.18
0.21
0.24
0.27
0.28
522
47
48
51
52
57
57
59
63
64
62
59
55
51
45
38
34
28
0.47
0.49
0.46
052
Ang.
16
-23
-26
-26
-28
-27
28
-29
-28
-29
37
-42
-51
61
-68
-80
-87
-102
113
-130
"146
FliOW
HEWLETT
~~ PACKARD
GENERAL PURPOSE
OSCILLATOR
TRANSISTOR
HXTR-4101
Features
GUARANTEED OUTPUT POWER
19.0 dBm Minimum at 4.3 GHz
HIGH FREQUENCY PERFORMANCE
12 dBm Typical at 8 GHz
USABLE TO 10 GHz
,....",..~-i
0.51 (0.021
TYP.
Description
The HXTR-4101 is an NPN bipolar transistor designed for
consistent high oscillator output. Each device is tested for
specified oscillator performance at 4.3 GHz. The device
utilizes ion implantation and self alignment techniques' in its
manufacture. The chip is provided with dielectric scratch
protection over its active area.
The HXTR-4101 is supplied in the HPAC-100, a rugged
metal/ceramic hermetic package, and is capable of meeting
the environmental requirements of MILS-19500 and the
test requirements of MIL-STD-750/883.
Ie
Pr
TJ
Tsm
Parameler
Collector to 8ase Voltage
Collector to Emitter Voltage
Emitter to Sase Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering 10 seconds each lead)
c:::::7't
HERMETIC PACKAGE
Symbol
Vcao
VCEO
V.so
TYP.
limit
30V
20V
I.SV
70mA
900mW
300C
-<IS" 0 to
2500
Oullin. HPAC-100
+2500
Notes:
1. A (')JC maximum of 210 C/W should be used for derating
and junction temperature calculations (TJ = Po X (-1JC +
TCASEL
2. A MTTF of 1.0 x 107 hours wil! be met or exceeded when the
junction temperature is maintained under TJ = 2000 (based
on an activation energy of 1.1 eVl. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
72
BVCES
IOEO
leBO
hFE
Pose
MIL-STO-nO
3011,,'
3041.1
3036.1
3076.1'
300~s
:J:
2.
18
a:
19,0
21.5
20,5
17,0
12.0
-50
40
a:
"'"
~ "
dBm
120
500
100
220
a:
a: 16
....
i=::>
50
Max.
dBc/Hz
2.
::>
Typ.
22
E
~
V
nA
nA
f = 3 GHz
4,3GHz
6 GHz
BGHz
N/C
Min.
30
Units
'"
!g
12
,.
ill
1i
FREQUENCY (GHz)
4.3 GHz.
Typical 5 - Parameters
$'1
521
$12
$22
Freq. (MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
1000
1500
2000
2500
3000
3500
4000
4500
5000
6000
7000
8000
9000
10000
11000
12000
0.93
0,94
0.96
0,98
0.99
1.01
1,02
1.Q1
0.98
0.91
0.85
0,78
0.76
0.72
0.70
0,64'
161
153
144
134
123
115
106
96
88
74
61
49
44
27
6
-24
1,93
1,92
1.95
1.97
1.96
1.95
1.87
1.79
1.65
1,32
1.06
0.87
0.76
0.72
0,68
0.67
-29
-44
-59
-76
-94
-114
-133
-155
-174
144
109
74
60
29
5
-25
0.Q11
0,023
0.039
0,061
0.086
0.117
0.154
0.186
0.217
0.245
0.267
0.298
0.238
0,288
0,302
0.320
127
126
120
113
105
93
84
70
58
35
17
1
-10
-24
-38
-58
1,01
1.04
1,06
1.10
1,12
1.16
1,19
1.20
1.21
1.10
0.99
0.89
0.93
0,89
0.84
0,82
-15
-31
-45
-59
-74
-91
-108
-127
-143
-176
157
135
131
113
102
92
73
rh~
~~
LINEAR POWER
TRANSISTOR
HEWLETT
PACKARD
2N6701
(HXTR -5101)
Features
HIGH OUTPUT POWER
23 dBm Typical P1dB at 2 GHz
22 dBm Typical P1dB at 4 GHz
HIGH PldB GAIN
13 dB Typical GldB at 2 GHz
7.5 dB Typical GldB at 4 GHz
HIGH POWER-ADDED EFFICIENCY
HERMETIC PACKAGE
Description IApplications
ll.6' (0.02)
TVP.
The 2N6701 (HXTR-5101) is an NPN bipolar transistor designed for high output power and gain up to 5 GHz. To
achieve excellent uniformity and reliability, the manufacturing process utilizes ion implantation and self alignment
techniques. The chip has a dielectric scratch protection over
its active area and TII.2N ballast resistors for ruggedness.
The superior gain, power, and distortion performance of the
2N6701 commend it for applications in radar, ECM, space,
and commercial and military telecommunications. The
2N6701 features both guaranteed power output and
associated gain at 1 dB gain compression.
The 2N6701 is supplied in the HPAC-100, a metal/ceramic
hermetic package, and is capable of meeting the
environmental requirements of MIL-S-19500 and the test
requirements of MIL-STO-750/883.
0.110.0041
I I
i'
t~I======~~~"~====~lt
tJ.\ frloi
(TeASE = 25C)
Symbol
VCBO
VCEO
VEBO
Ie
Pr
TJ
T5TG
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Sase Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Limit
45V
27V
4V
Outline HPAC-l00
100 rnA
1.1 W
aooC
-es"C to
200'C
Lead Temperature
(Soldering 10 seconds each lead)
+25O"C
Notes:
1. A 9JC maximum of 210C/W should be used for derating
and junction temperature calculations IT J = Po x (-)JC +
TCASEI.
2. A MTTF of 3.5 x 106 hours will be met or exceeded when the
junction temperature is maintained under TJ = 1250 C Ibased
on an activation energy of 1.1 eVI. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
74
Unite
Typ.
MIn.
Symbol
eVCBO
3001.1'
eVCiO
3011.1'
24
SViSO
3026.1'
3.3
Malt.
40
lEBO
3061.1
ICES
3041, 1
/l-A
nA
200
leao
3036.1
nA
100
hFE
3076."
P1de
G1ae
15
40
21.0
23.0
22.0
6.5
13
7.5
dBm
f=2GHz
4GHz
2GHz
4GHz
de
15
PSAr
20Hz
4GHz
dBm
25.5
25.0
'I
Power-Added Efficiency
at 1dS Compression
2GHz
4GHz
35
24
IP3
40Hz
dBm
31
~E
]
c
!----
"E
"~.
30
iii
'"
P1dB
;;
i'
1$2t~ 12
"-
I\. I\M~G
10
"cz
"
~
:;;'"
r\1'
20
10
>~
1=
~
o.1
~
z
;;
"cz
"
'"'"
E
~
w
~
>-
I
.2
.4
.6.8 1
810
FREQUENCY (GHzj
25
15
24
23
22
21
20
v::
-- .---!~.
h
19
18
Vte
r-....
G,,,,
I
20
'z"
>-
'\.
.....
-30
ISV
,-
,.
~
~
8 10
FREQUENCY (GHz)
75
-20
-40
:r>-
/
/
-30
VPIMQ
-50
-60
-10
-10
"'~
50
10
"'V
.,...,.
20
J:
:=
~ F-
40
10
'P,
30
G,
10
//
~
5
10
'\.
.'\.
12V
I'
6
FREQUENCY (GHz)
'\.
l8V
'/
17
:=
to;
.5
/
-5
10
15
20
25
30
'180
30mA.
Typical S-Parameters
S'1
Freq. (MHz)
Mag.
Ang.
(dB)
100
200
0.80
0.78
0,75
0,72
0,6B
0.66
0.64
062
0,61
0,60
0,56
0,55
0.56
0,55
0,56
0,54
0,54
0.52
0.54
0.54
-19
-37
-53
-68
-81
-92
-102
-111
-119
-126
-151
-169
179
168
158
148
137
128
115
108
20.6
20.1
19.5
lB.7
17.9
17,0
16.2
15,5
14,8
14.1
11,2
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
TypicalS-parameters
10.7
10.2
9.44
B,63
7,87
7,15
6,52
5.96
5.49
5.08
3,64
2,80
2.29
1.93
1.69
1,50
1,33
1,21
1,12
1.01
B.9
7.2
5,7
4.5
3,5
2,5
1.6
1,0
0.0
VeE
= 15V,
Ie
Freq. (MHz)
Mag.
Ang.
(dB)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0,80
0.78
0,76
0,73
0,69
0.67
0,64
0,62
0.60
0.60
0,57
0.55
0.56
0.56
-18
-35
-50
64
-77
-88
-97
-107
-115
-122
-148
-166
-178
171
160
151
141
130
118
110
19,4
19.1
18.5
17.8
17.1
16,3
15.5
14.11
14,2
13,5
10.8
8,6
6,9
5.1
4,$
3.3
2.3
1,5
0,8
0.0
9,35
9,07
8.44
7,79
7,16
6.56
6,02
5.54
5.13
4,76
3.47
2.69
2,21
1.80
1.65
1,47
1,30
1.18
1.10
0,99
0.56
0,53
0,53
0,50
0,52
0,53
(dB)
165
154
143
133
124
117
110
104
99
94
75
59
45
33
21
10
0
-11
-37
-31
-28
27
-26
-25
-24
-24
S'2
Mag.
Ang.
Mag.
$22
Ang.
77
67
60
53
47
42
39
33
31
25
22
21
21
20
19
18
16
14
11
0,98
0.94
0.88
0.83
0.78
0.73
0,69
0,66
0.64
0.61
0.55
0.52
0.53
0,52
0.55
0,58
0,58
0.62
0,60
0.64
-8
-15
-21
26
-30
-33
-36
-38
-41
-43
-51
-61
-72
-79
-89
-96
-106
-113
-122
-132
S22
Ang_
-22
-21
-21
-20
-19
19
-18
-17
-17
0.01
0.03
0,04
0.05
0,05
0,06
0.06
0.07
0.07
0,07
0.06
008
0,09
0,09
0.10
0,11
0.11
0.13
0.14
0,15
Ang.
(dB)
812
Mag.
Ang,
Mag.
168
155
145
135
127
119
113
107
101
-37
-31
-28
-26
-25
-24
-23
0,01
0,02
0.03
0.04
0,05
0,06
0,06
78
69
61
55
49
44
40
23
0.06
0,98
0.95
0,91
0,86
0,81
0,76
0.72
0,69
0.66
0.63
0.57
0,54
0,55
0.50
0,56
0.59
0,59
0,62
0.61
0,64
-23
-32
-23
-23
-23
36
= 15mA
821
Mag.
$"
Ang.
96
76
60
46
36
21
10
0
-10
-22
-31
76
-23
23
-22
-21
-21
-20
-20
-19
-19
-18
-17
-16
37
0,07
34
0,07
32
0.08
0,08
0,09
0,09
0.10
0.11
0,11
0.12
0,14
0,15
24
21
19
21
18
18
17
15
13
11
-7
-14
-20
25
-29
-32
-35
-38
-40
-43
-53
63
75
-85
-91
-99
-108
-116
124
-135
Flio-
LINEAR POWER
TRANSISTOR
HEWLETT
~~ PACKARD
HXTR-5102
Features
HIGH OUTPUT POWER
29 dBm Typical P1dB at 2 GHz
27.5 dBm Typical P1dB at 4 GHz
HIGH P1dB GAIN
11.5 dB Typical G1dB at 2 GHz
7 dB Typical G1dB at 4 GHz
HIGH POWER-ADDED EFFICIENCY
HERMETIC FLANGE PACKAGE
DescriptionlApplications
PIMElIIISIONS IN
Ouiline
MllllMETE~S
HNCHSl
HPAC-200 GB/GT
(TeASE = 25 C)
Symbol
Vcse
VCEe
VESO
Ie
Pr
TJ
TSTG
Umll
Parameter
Collector to Base VOltage
Collector to Emitter Voltage
Emlner to 8ase Voltage
DC Collector Curren!
Total Oevlce Olsslpatlon
Junction Temperature
Storage Temperature
Lead Temperature
<Soldering 10 seconds each ieath
45V
27V
4V
mA
4W
250
300'C
-B5"C to
200'C
+250'C
In
Notes:
77
Symbol
eVCBO
BVceo
aVEBO
Unitt
Min.
40
3001.1'
3011.1'
24
3026.1'
3.3
Typ.
Mill.
leBO
3061.1
f.tA
ICES
3041.1
nA
5
200
I'lA
100
leBo
3036.1
hFE
3076.1'
PldB
GldB
f=2 GHz
4 GHz
2 GHz
4 GHz
!J
Power-Added Efficiency at
1 dB Compression
Third Order Intercept Point
VCE=18 V. Ic=110 rnA
2 GHz
4 GHz
IP3
26.5
dB
75
29.0
dam
2 GHz
4 GHz
PSAT
40
16
27.5
11.5
6.0
7.0
31.0
dam
29,5
37
/4
23
36
dSm
ii
OS
"'~
oi
""
FREQUENCY (GHz)
15
i I
II'N
G.
I II ' \.
F~I
\.
'0 I
'\
V F~ ..I
I
V
.l. J....-- '\ l/
J.
!
10 1--:::;;I-"1--+-+--~j--,--I
I
i
"ol--+--!--+-/-+---+--!---I
-20
-30
,40 f--+"-74--
50
'0
,5
30
:J:
OS
w
J
o
FREQUENCY (GHz)
FREQUENCY (GHz)
78
30
INPUT POWER OF EACH TONE (dBm)
1BO'
-90'
Typical S-Parameters
VCE
= 18 V,
SI1
= 110 mA
S21
S12
822
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
100
0.55
-74
25.4
18.60
146
-31
0.03
56
0.85
-29
200
0.65
-109
22.7
13.60
123
-28
0.04
39
0.68
-47
Freq. (MHt)
Ic
Ang.
300
0.70
-134
20.8
1090
108
-27
0.05
28
0.55
-59
400
032
-144
18.6
8.47
97
-26
0.05
21
0.48
-65
500
0.74
-158
17.2
7.22
88
-26
0.05
17
0.42
-74
600
0.73
-160
15.6
5.99
81
-25
0.05
13
0A1
-75
700
0.74
-167
14.6
5.39
76
-25
0.05
11
0.39
-79
800
0.74
-170
13.4
4.66
69
-25
0.06
0.39
-82
-86
900
0.74
-175
12.7
4.32
64
0.38
0.74
-178
11.8
3.91
59
-25
-25
006
1000
0.06
0.37
-92
1500
0.71
166
9.0
2.82
34
-24
0.06
0.Q7
7
-2
0.43
-107
0.51
-119
0.61
-133
0.73
-148
2000
0.64
153
7.3
2.32
10
-23
2500
0.52
140
6.3
2.07
-17
3000
0.32
129
5.4
1.86
-49
-22
-21
0.09
-6
-22
-42
3500
0.15
158
3.8
1.55
-83
-20
0.09
-67
0.77
-165
4000
0.32
-145
2.8
1.38
-113
-22
0.08
--98
0.80
-177
4500
0.52
-158
0.0
1.00
-142
-24
0.06
132
0.82
171
5000
0.70
176
-1.9
0.81
-170
-28
0.04
50
0.87
159
5500
0.78
155
-3.0
0.71
161
-28
0.04
85
0.83
142
6000
0.85
119
-3.9
0.64
121
-19
0.11
16
0.93
121
79
0.08
Flin-
LINEAR POWER
TRANSISTOR
HEWLETT
~~ PACKARD
2N6741
(HXTR-51 03)
Features
HIGH OUTPUT POWER
23 dBm Typical P1dB at 2 GHz
22 dBm Typical P1dB at 4 GHz
HIGH P1dB GAIN
11 dB Typical G1dB at 2 GHz
7 dB Typical G1dB at 4 GHz
HIGH POWER-ADDED EFFICIENCY
HERMETIC PACKAGE
Description/Applications
The HXTR-5103 is an NPN bipolar transistor designed for
high gain and linear output power up to 5 GHz. To achieve
excellent uniformity and reliability, the manufacturing
process utilizes ion implantation and self alignment techniques. The chip has a dielectric scratch protection over its
active area and T82N ballast resistors for ruggedness.
The superior power, gain and distortion performance of
the HXTR-5103 commend it for use in RF and IF
applications in radar, ECM, space, and other commercial
and military communications.
0,102
10.004)
TYP.
SymbOl
VCBO
VCEO
Veeo
Ie
PT
TJ
TSTG
Paranwler
Collector to Base Voltage
Collector to Emitter Voltege
Emitter to 8ase Voltage
PC Colleotor Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering 10 seconds each lead)
limit
45V
27V
4.0V
100mA
1,4W
300C
250C
Mll~IMETEIIS
Outline HPAC200
+250C
Notes:
1. A ElJC maximum of 125C/W should be used for derating
and junction temperature calculations (T J = Po X 0JC +
TCASEI.
2. A MTTF of 3.5 x 106 hours will be met or exceeded when the
junction temperature is maintained underTJ = 125C (based
on an activation energy of 1.1 eV). For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
80
IINCHES).
Test
MIL-STO-750
Units
Min.
40
Typ.
Max.
Symbol
BVCBO
3001.1'
BVCEO
3011,1'
24
BVESO
3026,1'
3,3
leaD
3061,1
V
p,A
Ices
3041,'
nA
200
leaD
3036.1
nA
100
hFE
PtdB
G'dS
PSAT
Power-Added Efficiency
at 1dB Compression
Third Order Intercept Point
Vce=18V,lc=30mA
IP3
3076,"
f=
--
15
40
2GHz
dBm
22,0
23,0
2GHz
dB
9.5
11.0
20Hz
dBm
25.0
20Hz
'1'0
34
20Hz
d6m
32
75
2=t= - ,t-
i---
20
I.
16
14
,
!..c
10
".' ,.v
,.
s,
I'
o
FREOUENCY (GHz)
26
~
23
22
~
'"
20
.:9
Ii-'"
I-"'"
Ji"'"
-it
.,...
12 I-1
10
20
.....
1:IV
i-
10
r--
FREQUENCV (OHz)
Current at
'8V
:J:
f.
r-
....
50
8 10
FReaUENCY (OHz)
81
20
10
'"~
-10
-20
I-
:>
-30
1:
-40
il
..L-
. j-
lPo
30
'''''
i
40
50
40
./
c--f
4
10
60
".z
lo"C:
'"
G,
"-
AIfol
30
I
50
40
VS,
......
GH.
."-
,16V
I I
r--
10
60
'''"r- ....
I. I-1. --
30
",,;.~v
_f"""
I
I
I
......... Old. _
15
J J
....
20
15
l"- _
f-_.-
P'J.dS -
20
oTt- -f
.J
10
r'-l-
25
.,i.. -~r
12V.ff=
f"
0~1--~,2~~4~6~.~1--~~~4~6~."0
tt
30
... -
-50
-50
-10
"" ... ~
~ f.-"
~
--
, ./
;""'Y
! 'V
1 V
-5
".,
10
15
20
90
~90
Typical 5- Parameters
$11
Freq. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
Mag.
0.74
0.71
o.se
0.66
0.62
0.60
Cl.5S
0.55
0,54
0.52
0.49
0.47
0.47
0.45
0,45.
0.42
0.41
0.39
0.39
0.37
Ang.
-20
-40
-57
-72
86
97
108
116
-124
-131
-159
-179
165
151
138
123
110
89
(dB)
74
1.4
0.7
55
Typical 5- Parameters
20.7
20.3
1M
18.7
17.8
16.9
16.2
15.4
14.6
13.8
11.0
8.8
7.1
5.S
4.7
3.7
3.2
2.2
VCE
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
Mag.
0.74
0.70
0.67
0.63
0.60
0,58
0.57
0.55
0.54
0,52
0.48
0.46
0.46
0.45
0.44
0.43
0.41
0.38
0.39
0.37
Ang.
-19
-37
-54
-69
-83
-95
-105
-113
-121
-128
-156
-171
167
153
140
126
112
93
74
56
Ang.
165
152
140
130
121
113
106
100
94
88
66
46
32
17
2
-11
3.53
2.77
2.27
1,95
1.71
1.54
1.44
1.29
1.16
1.09
-24
-38
-53
-64
(dS)
31
-32
-29
-27
26
-25
25
24
-24
-23
-22
-21
-20
19
18
-17
-16
15
-14
-13
$,2
Mag.
0.Q1
$22
Mag.
0.03
Ang.
79
68
0.04
0,04
0.05
0.06
0.06
0.06
0.07
0.07
0.08
S2
55
49
44
41
38
35
33
25
0.09
22
0,10
0,11
0,12
0.14
0.16
0.17
0.19
0.22
16
15
10
4
1
-6
-12
-17
0.69
0.84
0.79
0.75
0.71
0.68
0.65
0.63
0,58
0.56
0.56
0.59
0.59
0.64
0.65
0.69
0.69
0.69
Ang.
-9
0.98
0.94
-17
-23
-28
-33
37
40
42
.44
-46
-59
-67
-81
-90
-103
-111
121
-131
-139
-148
= 15V,lc = 115mA
S11
Freq. (MHz)
$21
Mag.
10.90
10.30
9.49
8.65
7.77
7.01
6.43
5.87
5.38
4.91
(dS)
191
16.S
16.2
17.5
16.S
16.0
15.2
14.5
13.8
13.0
10.2
8.0
6.3
5.0
3.8
2.S
1.9
1.0
O.S
-0.3
S21
Mag.
822
$12
Aug.
164
152
141
130
121
113
107
101
95
89
66
9.05
8.76
8.16
7.52
6,90
6.32
5.78
5.29
4.88
4.48
3.23
2,51
2.00
1.76
1.56
1.38
1.24
1.12
1.09
0.96
46
31
16
0
-13
-26
-40
55
-67
82
(dB)
-37
-31
-26
-27
-26
-25
-24
-24
23
-23
22
-21
-20
19
-18
-17
16
-15
-14
-13
Mag.
0.01
0.Q3
0.04
0.05
0.05
0.06
0.06
0.07
0.07
0.07
0.08
0.09
0,10
0.11
0,12
0.14
0,15
0.17
0.20
0.23
Ang.
81
68
60
53
48
43
40
37
34
31
25
21
16
16
12
8
4
-1
-6
-12
Mag.
0.98
0.94
0.90
0,85
0.80
0.76
0.73
0.70
0.67
0.65
0.60
0.56
0.57
0.59
0.60
0.64
0.64
0.68
0.70
0.69
Allg.
-8
-15
-21
-26
-31
-35
-38
-40
-43
-45
-55
-65
-77
-86
-98
-106
-114
-123
-130
-139
Flin-
LINEAR POWER
TRANSISTOR
HEWLETT
~e.. PACKARD
HXTR-51O~
Features
HIGH OUTPUT POWER
29 dBm Typical PldB at 2 GHz
HIGH P1dB GAIN
9 dB Typical GldB at 2 GHz
3.25 (O.128) DlA.
TYP,
LOW DISTORTION
HIGH POWER-ADDED EFFICIENCY
'Je=::=J.-l
HERMETIC PACKAGE
BI
.762
1.030)
Description/Applications
TYP
J L
1.62
(0.060)
TYP.
1.27
0.102
(0.0501
10.004)
TYP,
TYP.
= 25 C)
Symbol
VCBO
VeEo
Veso
Ie
PT
TJ
TSTG
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Lead Temperature
(SOldering 10 seconds each lead)
Limit
45V
27V
4V
250 mA
Outline HPAC200
4W
300C
435C to
200C
+250C
Notes:
1. A elJC maximum of 55 0 C/W should be used for derating and
junction temperature calculations (TJ = PD X 0JC + TeAsEl.
2. A MTTF of 3.5 x 106 hours will be met or exceeded when the
junction temperature is maintained under TJ = 125 0 C (based
on an activation energy of 1.1 eVi. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
83
3001.1'
Units
Min.
40
Mal(.
Typ.
BVCEO
3011.1'
24
BVEBO
3026.1'
3.3
IE60
3061.1
p.A
iCES
3041.1
nA
10
200
3036.1
nA
100
IceO
hFe
PldB
15
40
dBm
28.0
29.0
2GHz
dB
8.0
9.0
2GHz
dBm
31.0
2GHz
35
2GHz
dBm
37
3016.1*
f'"
2GHz
G'dB
PSAT
'1
Power-Added Efficiency
,at ldB Compression
Third Order Intercept Point
Vce=18V. ic"'11OmA
IP$
75
~
w
, ves-'
I[-..01
10
-I'-o!'oo,
~~ pv
_t:0
"-
'"~.
t'!!..
iii
:s
;g
I"""
i'l
f-~. r~5V
'"
~
f-ri
1 -
r'
I I '
00
"""
0;;;;
1c;H,T'" r-...:
f-;;'r
",'
50
100
150
FREQUENCV (GHz)
FREQUENCV (GHz)
15
30
29
28
27
2.
25
24
,/
1/
......
I~I
VCE,"lIW
, II), Go
lid\.
i i1 \.
12.5
12V
.......
V "dB
10
ILl
,..'so
100
18V
, 'I
;:: 150
VCE
\.
~" ~
~,
ll,dO
~+ W-
75
V'
r-- i-
II II
L ' It
= 12 and 18 V at 2 GHz,
~
I !I
25
0
.L
, 11,1
.-
/'.1 I
........ i ""IN
\. /' I
...x: .
"
I
'~
J
. i
,5
~
W
g
~
j'l
6
8 10
50 )---
40 1-:30 f-f20
10
I-f-
....
-10
-20
-30
f-
-40
-60_ 5
,-- .. f--
- r--
. r-
';::p ... :
'f-
It
7rI-,--
- 'r,y- ITt
-so
-.IJ-' ;...~~~
I,,..r-
'I
.1
60
A
1
10
15
20
25
FREQUENCY (GHzj
84
90'
180"
-90'
Typical S-Parameters
VCE
= 18V,
$11
Freq. (MHZ)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
Mag.
0,48
0,54
0.59
0.61
0.63
0.64
0.65
0.65
0.65
0.64
0.65
0.65
0.66
0.65
0.64
0.63.
0.61
0.59
0.58
0.5S
Ic
= 110mA
$21
Ang.
-68
-109
-132
-146
-155
-162
-168
-172
-176
179
169
151
139
128
115
103
87
72
53
38
(dB)
24.8
22.6
20.4
18.5
16.9
15.5
14.3
13.3
12.4
11.5
8.2
6.0
4.3
2.9
1.8
0.9
0.2
-0.7
-1.6
-2.3
$12
Ang.
140
127
112
102
94
68
83
78
73
69
50
33
17
2
-13
Mag.
17.30
13,50
10.50
8,43
7.02
5.98
5.21
4.62
4.15
3.70
2.57
1.99
1.64
1,40
1.23
1.11
1.03
0.93
0.84
0.77
-27
-41
-54
-67
-79
85
$22
Mag.
0.03
0.04
0.05
0.06
0.06
0.06
0.07
Ang.
62
-23
om
33
-23
-22
-20
-19
-17
0.Q7
33
0.08
0.10
0.11
0.14
0.16
0.19
0.22
0.26
0.29
0.34
0.37
32
31
30
(dB)
-31
-27
-26
-25
-24
-24
-24
-16
-15
-13
-12
-11
-10
-9
48
40
36
34
33
33
25
20
14
5
-2
-12
-22
-31
Mag.
0.88
0.69
0.55
0.47
0.41
0.38
0.35
0.34
0.32
0.32
0.32
0.33
0.39
0.42
0,46
0.51
0.53
0.57
0.57
0.60
Ang.
-27
-46
-58
-66
-71
-76
-80
-84
-87
-90
-104
-118
-130
-140
-152
-161
-172
179
167
155
Flio-
LOW NOISE
TRANSISTOR
HEWLETT
~~ PACKARD
2N6617
(HXTR-61 01)
Features
LOW NOISE FIGURE
2.8 dB Typical FMIN at 4 GHz
0.762 (0.0301
TYP.
HERMETIC PACKAGE
O.5Q8
BASE\
to.OZOID
TYP.
Description
~EMITTER
r---S.08 (0.201--:
TVP.
1.00 (O.039)
Mh==d1I.=J
L==+
~.
0.838 (0,033)
Ie
PT
TJ
TSTG(MAX)
TVP.
= 25 C)
Symbol
Parameter
Collector 10 Base Voltage
Collector to E.mltter Voltage
Emitter to 8ase Voltage
OC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering 10 seconds each lead)
limit
35V
20V
1.5V
20mA
300mW
30QoC
-65C to
200'C
+250'C
o:533liJ.02Tj
0.102 (0.0041
OUtlioe HPAC-70GT
In
Notes:
1. A 8JC maximum of 245 C/W should be used for derating
and junction temperature calculations (T J = Po x 0JC +
TCASEI.
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200 0 C (based
on an activation energy of 1.1 eV). For operation above this
86
Unlt$
Min.
Typ.
Max.
Symbol
BVcEs
3001.1'
leEO
3041.1
nA
500
100
lello
3036.1
nA
hFE
3076.1*
F~llN
30
50
dB
150
250
1.6
2.8
3.0
3246.1
Ga
Associated Gain
f=
4 GHz
2 GHz
dB
dB
8.0
9.0
13.5
4mA
18
16
12
14
" '"
A~~I~T.d"o."
(G~J
....
....
iii
':E"
z
/'
//
fil"
~
~
"
"z
z
'--
""=- .
2.0
3.0
4.0
5.0
-NOISE FIGU~f
L i.fI
o
o
FREQUENCY {GHz)
'N"V
~10V
...... ~
I
'C<I'V
\~CE"'3V
1\
1\
Sn
Sl)
S)1
SII
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.91
0.78
0.63
0.59
0.58
0.57
0.57
0.56
0,54
0.53
0.51
0.50
0.48
0,49
-11
-54
-98
-127
-149
-163
-173
180
173
167
160
152
146
132
7.14
6.27
5.03
3.88
3.14
2.64
2.20
1.94
1.66
1.45
1.34
1.21
1.07
0.89
168
135
113
87
71
59
48
37
29
20
11
1
-7
-23
0.007
0.026
0.037
0.039
0.042
0.042
0.043
0.046
0.049
0.053
0.058
0.060
0.063
0.069
79
54
33
28
26
25
25
25
24
24
23
22
20
15
0.99
0.90
0.78
0.76
0.75
0.76
0.77
0.79
0,81
0.85
0.86
0.88
0.87
0.87
-4
-18
-30
-35
-43
-50
-58
-64
-71
-76
-84
-92
-99
-108
87
'i
Typical S-Parameters
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
7000
/.::---
00
Freq, (MHz)
'r~'_
(~MINI,
6.0
V'C-E.'"15V
-!---
1.5
ASSC:CI~6!lPGA1N
';;:z"
;;;
MAG
= 10 V,
Ic = 4 mA
r0
(MagJAng.)
RN
FMIN (dB)
Freq. (MHz)
(Ohms)
1000
-480/23'
,450,61'
AlO/8B'
-425/121'
475/166'
.5301-164'
,520/-131'
23.31
15.57
15.13
1072
1.45
1.58
1.72
2,18
2.75
3,67
4.78
1500
2000
3000
4000
5000
6000
3,50
2.81
7,23
Typical S-Parameters
VCE
S11
= 3V,
Ic = 0,25mA
5"
5'2
S22
Freq. (MHz)
Mag,
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag.
Ang
500
1000
1500
2000
3000
,988
,956
22
-6.9
.451
438
.423
.412
.394
152
127
106
89
56
-28,2
-23.1
-20.6
-19.7
-19,3
.039
,070
.093
104
,108
72
-12
22
-33
,220
38
27
6
.993
,975
956
945
,938
42
,679
-59
.821
,888
Ic
= 0,50mA
Freq. (MHz)
Mag.
Ang.
500
1000
1500
2000
3000
976
.929
.887
.856
818
VCE
= 3V,
-42
-65
-81
-112
929
.910
-7,2
-7.5
-7,7
-8,1
S11
VCE
55
$22
$'2
$2'
464
586
(dB)
-0,8
Mag.
Ang.
(dB)
Mag.
Ang,
Mag,
Ang.
.991
152
,220
107
-2.5
-3.3
,688
35
24
7
.423
,583
89
-121
-21.4
-20.6
20,1
.986
,955
.920
.90$
,889
"24
792
.747
,038
.066
,085
,093
,099
70
128
-28.4
-23,6
.13
-1,3
-2,0
,863
-72
-24
-47
91
60
52
-34
-43
-60
.682
.818
= 3V,lc = 1.0mA
5. ,
Sl1
512
822
Freq. (MHz)
Mag.
Ang.
(dB)
Mag.
Ang.
(dB)
Mag.
ARg.
Mag.
Ang.
500
1000
1500
2000
,952
884
.821
.775
,738
25
-54
4.4
3,7
167
2,7
1,9
.77
-28.6
-24.3
-23.1
-22.6
-22,1
,037
.061
.070
,074
.079
66
47
31
,972
,919
-82
149
125
104
88
59
14
-25
-36
-43
-59
3000
-102
-133
1.54
1,36
125
1.09
88
23
10
.873
.854
.842
K
,328
.492
.664
.793
.908
LOW NOISE
TRANSISTOR
rli~ HEWLETT
~~ PACKARD
2N6742
(HXTR-61 02)
Features
LOW NOISE FIGURE
2.5 dB Typical FMIN AT 4 GHz
HIGH ASSOCIATED GAIN
9.0 dB Typical G.
HERMETIC PACKAGE
Description
The 2N6742 (HXTR-6102) is an NPN bipolar transistor
designed for minimum noise figure. The device utilizes ion
implantation techniques in its manufacture and the chip is
also provided with scratch protection over its active area.
The device is supplied in the HPAC-70GT, a rugged
metal/ceramic hermetic package, and is capable of meeting the environmental requirements of MIL-S-19500 and
the test requirements of MIL-STO-750/883.
= 25 C)
Symbol
Vello
VCEO
VESO
Ie
PT
TJ
Tsm
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
To!al Device Dissipation
Junction Temperatut"
Storage Tempsratu re
Lead Temperature
,Soldering 10 seconds each lead I
Limit
35V
20V
1.SV
20mA
300 mW
300'C
-65'C to
200'C
Outline HPAC-70GT
+250'C
Notes:
1. A (-)JC maximum of 245 0 C/W should be used for derating
and junction temperature calculations (TJ = PD X (-)JC +
TeASE).
89
BVer :;
Test
MIL-STO-750
Units
Min.
3001, l'
30
IcEO
3041,1
nA
leBO
3036,1
nA
hfE
3076,1'
FMIN
Typ.
Max.
500
100
50
dB
150
250
2.8
1.6
3,0
3246.1
Ga
Associated Gain
f =
dB
dB
4 GHz
2GHz
..
= 10V, Ie
8,0
9.0
13,5
= 4mA
18
....."
"f'...
A~~I~TED'
IGal
""",
'/
.....,
><
./
1,5
2.0
3.0
4.0
I ASSOClATED GAIN
I
5.0
i
1---.
6.0
(G<I)
~E f':tGt,JRE (FMIN!
10
i',
./'
2
I 1
MAG
I
NO'S~ fiGURE
Ir
MIO ',
t-
00
FREQUENCY (GHz)
VeE
= 10 V,
Ie
= 4 mA.
Typical S-Parameters
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
7000
Figure 3, Typical!S21E!2
at 4 GHz,
SIt
Freq. (MHz)
SI,
S2I
S22
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0,917
0,782
0,635
0,598
0.589
0,570
0,575
0.560
0,548
0.530
0,518
0,500
0.489
0.491
-11
-54
-98
-127
-149
-163
-173
180
173
167
160
7.149
6,277
5.037
3,881
3,148
2.646
2.209
1,948
1,665
1.450
1,346
1,210
1,076
168
135
113
87
71
59
48
37
29
20
0,007
0.026
0.037
0,039
0,042
0.042
0.043
0,046
0,049
0,053
0.058
0.060
0.063
0,069
79
0.991
0.901
0,787
0,763
0.754
0,760
0,773
0,795
0,816
0,850
0,860
0830
0,877
0.872
-4
-18
-30
-35
-43
-50
-58
-64
-71
-76
-84
-92
-99
-108
152
146
132
0.897
11
1
-7
-23
90
54
33
28
26
25
25
25
24
24
23
22
20
15
VS.
Bias
r.
Fr(>q. (MHz)
(Mag'/Ang.)
1000
1500
2000
3000
4000
5000
6000
.480/23"
.450/61 '
.410/88'
.4251121'
.475/166'
.5301-164'
.520/-131'
RN
FMIN (dB)
23.31
15.57
15.73
10.72
3.50
2.81
7.23
1.45
1.58
1.72
2.18
2.75
3.67
4.78
(Ohms)
Ie
mA
FMIN
dB
G.
RN
dB
Ohms
3
3
3
0.25
0.50
1.00
2.25
1.87
1.55
8.5
12.7
15.7
605
25.5
13.9
f.
fL
Mag.lAng. Mag'/Ang.
.805/31"
.713/38'
.571/39'
.788/25'
.779/29'
.774129'
Frequency
BIA5
1000 MHz
1500 MHz
2000 MHz
G,
dB
F MN
G.
FMIN
mA
FMIN
dB
dB
dB
dB
0.25
050
10
2.25
1.87
1.55
8.5
127
15.7
267
206
1.73
50
9.9
11.7
2.83
VeE
Ie
3
3
3
223
179
3000MHz
G.
dB
FM.N
4.7
79
10.2
388
G,
dB
dB
2.93
4.1
6.4
2.38
8.1
Typical S-Parameters
5 11
Freq. (MHz)
500
1000
1500
2000
3000
Mag.
Ang.
.988
.956
.929
.910
.888
(dB)
5 21
Mag.
Ang.
(dB)
5a
Mag.
5:u
Ang.
Mag.
Ang
,993
.975
.956
.945
.938
-12
-22
-33
-42
59
-22
-42
-65
-81
-112
-6.9
-7.2
-7.5
-7,7
-8.1
.451
.438
.423
.412
.394
152
127
106
89
56
-28.2
-23.1
-20.6
-19,7
-19.3
.039
.070
.093
.104
.10B
5 21
Mag.
Ang.
(dB)
5'2
Mag.
Ang.
Mag.
Ang.
-3.3
.991
.863
.792
.747
.688
152
128
107
91
60
-28.4
-23.6
-21.4
-20.6
-20.1
.038
.066
.085
.093
.099
70
52
35
24
7
.986
.955
920
906
.889
-13
-24
-34
-43
-60
52,
Mag.
Ang.
(d8)
Mag.
Ang,
Mag.
Ang.
1.67
1.54
1.36
1.25
1.09
149
125
104
88
59
-28.6
-24.3
-23.1
-22.6
-22.1
.037
.061
.070
.074
,079
66
47
31
23
10
.972
.919
.873
.854
.842
-14
-25
-36
43
-59
72
55
38
27
.220
.464
.586
.679
.821
Mag.
Ang.
(dB)
500
.976
.929
.887
.858
.818
-24
-47
-72
-89
-121
-O.B
1000
1500
2000
3000
-1.3
-2.0
-2.5
5 22
K
.220
.423
.583
.682
,818
Mag.
Ang.
(dB)
500
1000
1500
2000
3000
.952
.884
.821
.775
.738
-25
-54
-82
-102
-133
4.4
3.7
2.7
1.9
.77
$22
$'2
91
K
.328
.492
.664
.793
.908
Fli;'
LOW NOISE
TRANSISTOR
HEWLETT
~~ PACKARD
2N6618
(HXTR- 6103)
Features
GUARANTEED LOW NOISE FIGURE
2.2 dB Maximum FMIN at 2 GHz
HIGH ASSOCIATED GAIN
12.0 dB Typical Ga at 2 GHz
3.3 (o.I30l
1I
MIN
HERMETIC PACKAGE
. ...",..-.!'-
z::=:::7
t
Description
1.
0.51 (0.02)
TYP.
CTcAse= 25 C)
Symbol
VCBO
VeEo
VESO
Ie
PT
TJ
T6m
Parameler
Collector to Sase Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Tolal Dev1ce Dlssipatlon
Junotion Temperature
Stontga Temperature
Lead Temperature
(SolderingtO seconds each lead)
O.t (0.004)
TYP.
1.Il7fo.3
+
1O.04t.
-LL
0.0..':'=====;"!;;;;;;;;J~====::J.
n;;;:;:rw
UmIt
35V
20V
1.5V
20mA
300mW
3000C
-65010
2OOC
+250C
OuIDne HPAC-100
Notes:
1. A 6JC maximum of 245' C/W should be used for derating
and junction temperature calculations (TJ = Po x 6JC +
TCASEL
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200' C (based
on an activation energy of 1.1 eV). For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
92
BVCES
Test
MIL-STD-7S0
Unitt
Min.
3011."
30
= 10V
ICEO
3041.1
nA
leBo
3036.1
nA
hFE
3076."
FMIN
dB
G.
Typ,
Max,
500
100
50
dB
11.0
150
250
1.8
2.2
12.0
= 3 mA
14
'"
IG.1
~
w
a:
"ii:
C,'l
=-
'"oz
r--...
JG
"
~~'
r--
....-K'
12
;;
0
V
./
C,'l
@
~
<3
0
11
1.5
2.0
4.0
3.0
(G.I
1.0
........ -
'"
,l
o
./
(j
0
C,'l
13
-1
FREQUENCY (GHz)
10V,le=3mA.
16
14
12
,.....
10
"'-
I!!:
1/
.g
1---'
V- ........ t-...
VeE = UiV
VeE -jOV
VeE =6V
f'..
Vee
'\
-av
VeE :II1V
93
VCE=10V,lc=3mA
r.
RN
FMIN
(Ohma)
(dB)
1.65
1.60
1000
(tilagJAng.)
.465/36'
1500
.369/67"
25.1
22.5
2000
.323194"
23.3
Freq. (MHz)
1.55
$11
Freq. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
5000
6000
Mag.
0.93
0.89
0.86
0.83
0.79
0.75
0.71
. 0.68
0.65
0.62
0.52
0.50
0.50
0.49
0.54
0.52
0,53
0.48
S22
812
Ang.
(d8)
Mllg.
Ang.
(d8)
Mag.
Ang.
Mag.
Ang.
-11.5
-23.0
-34.0
-44.0
-54.0
-65.0
-73.0
-81.0
-91.0
-97.0
-129.0
-151.0
-169.0
175.0
165.0
156.0
140.0
120.0
16.2
17.1
16.4
15.9
15.6
15.4
15.0
14.4
14.0
13.5
11.4
9.3
7.8
6.5
5.4
4.5
2.6
0.9
6.46
7.13
6.58
6.26
6.02
5.91
5.62
5.25
4.99
4.72
3.71
2.93
2.45
2.12
1.87
1.67
1.35
1.11
168.0
158.0
149.0
142.0
135.0
128.0
121.0
116.0
111.0
106,0
64.0
69.0
55.0
42.0
29.0
19.0
-3.0
-22.0
-42.0
-37.0
-34.0
-32.0
-30.0
-29.0
-29.0
-28.0
28.0
-27.0
-27.0
-26.0
-26.0
-26.0
-25.0
-24.0
-23.0
-21.0
0.01
0.01
0.02
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.08
0.09
77.0
77.0
66.0
60.0
55.0
51.0
48.0
45.0
43.0
41.0
32.0
31.0
31.0
33.0
35.0
37.0
35.0
34.0
0.99
0.97
0.94
0.92
0.89
0.87
0.85
0.64
0.83
0.81
0.74
0.72
0.69
0.68
0.65
0.61S
0.71
0.73
-4.0
-8.0
-12.0
-16.0
-19.0
-21.0
-24.0
-25.0
-27.0
-28.0
-35.0
-43.0
-51.0
-57.0
-68.0
-76.0
-96.0
-112.0
94
Flidl
LOW NOISE
TRANSISTOR
HEWLETT
~~ PACKARD
2N6743
(HXTR-61 04)
Features
GUARANTEED LOW NOISE FIGURE
1.6 dB Maximum FMIN at 1.5 GHz
HIGH ASSOCIATED GAIN
14.0 dB Typical Ga at 1.5 GHz
HERMETIC PACKAGE
Description
The 2N6743 (HXTR-6104) is an NPN bipolar transistor
designed for minimum noise figure at 1.5 GHz. The device
utilizes ion implantation techniques and self alignment techniques in its manufacture. The chip is provided with scratch
protection over its active area.
.....2.51; O.ze..,..,..
10.10 0.01)
Veso l11
VCEOP,
VEBOlll
Ie 111
Pr 11 ;
TJ
TSTG
Parameter
Limit
35V
20V
1.5V
20 mA
300 mW
300'C
-65'C to
200'C
+250'C
-Outline HPAC-100
Notes:
1. A 0)JC maximum of 245' C/W should be used for derating
and junction temperature calculations (T J = Po X 0)JC +
TCASEI.
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200 0 C (based
on an activation energy of 1.1 eV). For operation above this
95
BVCEs
ICEO
leBo
Iln
FMIN
G.
= 100!,A
= 10V
Test
MILSTD750
Units
Min.
3011.1'
30
30411
nA
3036.1
nA
3076.1'
3246.1
Typ.
Max.
500
100
50
150
250
1.4
1;6
dB
13.0
dB
14.0
= 3 mA
...............
ASSOCIAT~
_GAIN
(G"
'"
MiG -
.............
cc
::J
w
'"i5
z
"'"~
"u:
3
2
- NOr
1.5
2.0
G2IN-
'"'" 1
1.0
IG,I
.."... -;:;lCIATko
3.0
F r R rM1N( -
4.0
FREQUENCY (GH,I
Figure 1. Typical MAG. FMIN and Associated Gain vs. Frequency at VeE = 10 V,
Ie = 3 mA.
16
14
VeE -6V
12
~ I"-
10
"-w
"
-l
f' -
.....
~:
ro
RI'I
FMII'I
.- r---
Freq. (MHz)
(Mag.! Ang.)
(Ohms)
(dB)
1000
.465/36"
25.09
1.20
1500
.369/67'
22.47
1.40
2000
.323/94'
23.31
1.50
, VC.=1V
o
COLLECTOR CURRENT (mAl
96
8"
812
Freq. (MHz)
Mag.
Ang.
(dB)
Mag.
Ang.
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
5000
6000
0.93
0.89
0.86
0.83
0.79
0.75
0.71
0.6s
0.65
0.62
0.52
0.50
0.50
0,49
0.54
0.52
0.53
OAS
-11,l>
-23.0
-34.0
-44.0
-54.0
-65.0
-73.0
-Sl.0
-91.0
-97.0
-129.0
-151.0
-169.0
175.0
165.0
156.0
140.0
120.0
16.2
17.1
16.4
15.9
15.6
15.4
15.0
14.4
14.0
13.5
11.4
9.3
7.8
6.5
5.4
4.5
2.6
0.9
6.46
7.13
6.58
6.26
6.02
5.91
5.62
5.25
4.99
4.72
3.71
293
168.0
158.0
149,0
142.0
135.0
128.0
121.0
116.0
111.0
106.0
84.0
69.0
55.0
42.0
29.0
19.0
-30
-22.0
2045
2.12
1.87
1.67
1.35
1.11
97
(dB)
-42.0
-370
-34.0
-32.0
-30.0
-29.0
-29.0
-28.0
-28.0
-27.0
-27.0
-26.0
-26.0
-26.0
-25.0
-24.0
-23.0
-210
822
Mag.
Ang.
Mag.
Ang.
0.01
0.Q1
0.02
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.08
0.09
77.0
77.0
66.0
60.0
55.0
51.0
48.0
45.0
43.0
41.0
32.0
31.0
31.0
33.0
35.0
37.0
35.0
34.0
0.99
0.97
0.94
0.92
0.89
0.87
0.85
0.S4
0.83
0.81
0.74
0.72
0.69
0.68
0.65
0.6S
0.71
0.73
-4.0
8.0
-12.0
-16.0
-19.0
-21:0
-24.0
-25.0
-27.0
-28.0
-35.0
-43.0
-51.0
-57.0
-68.0
-76.0
-960
-112.0
FliO'l
a:e.
GENERAL PURPOSE
TRANSISTOR
HEWLETT
PACKARD
HXTR-6105
Features
LOW NOISE FIGURE
4.2 dB Maximum FMIN at 4 GHz
HIGH ASSOCIATED GAIN
9 dB Typical Ga at 4 GHz
WIDE DYNAMIC RANGE
ho-
HERMETIC PACKAGE
.-?-<-"'I
3.3 (0.13f
MIN,
_I
-,
c:z-
0.5110.021
Description
TVP.
0.1 (0.0041
I
I
(.042, O.O..ll=====~!;;;;;;;;;;J-.;;!====:::I
1.07.tI 0.3
t i"
(TeASE = 25 C)
Symbol
VCSO
VCEO
VEBO
Ie
Pr
TJ
TSTG
Parameter
Collector to Sase Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
LImit
30V
20V
1.5V
70 mA
90DmW
3DOC
-6SC to
20DoC
Oulline HPAC-100
+2SO"C
Notes:
1. A 0JC maximum of210C/W should be used for derating and
junction temperature calculations (TJ = PD X 0JC + TCASEI.
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200C (based
on an activation energy of 1.1 eV). For operation above this
condition, refer to page 108. "Reliability Performance of Bipolar Transistors".
98
TYP.
Mll-STD750
Test Method
Units
Min.
30
BVCES
3011.1
ICEO
3041.1
nA
leBO
3036.1
nA
hFE
3076.1'
FMIN
Ga
P'dS
100
50
3246.1
dB
8.0
120
220
2.2
3.8
4.2
15.0
9.0
14
dBm
- 2% duty cycle,
Max.
500
dB
f = 1.5 GHz
=4GHz
Associated Gain
f=1.5GHz VeE = 15V, Ie = 15mA
= 4 GHz
Power Output at ldB Compression at 4 GHz
VeE = 15V, Ie'" 15mA
Typ.
20
_ _ _ _ ASSOCIATED GAIN
18
115V, 15 mAl
/
I
I
f--~d- ASSOCIATED GAIN
";;
(lOV.5 mAf
:
2
12
'"@
f-
"aU
'"'"
"
(.
~~.O---------2~.0----3~.0---4~.0--5~.0--6~.04
FREQUENCY (GHz)
!. -
VeE'" 15V
VeE'" 10V
~ ,/
V~
if;
/,
VI
A
I
.....
"""
Freq. (MHz)
VeE" 2V
10
15
.'\.
I'
20
25
30
COLLECTOR CURRENT 1m A)
99
FM1N
(dB)
6.81
1.80
2.15
3.01
2000
3000
,5411-158'
533
5.04
6.54
4000
5000
.6281-135'
.624/-107'
15.54
3.81
60.14
4.75
1500
H-h.
RN
(Ohms)
.238/123'
3851142'
.429/173'
1000
/.
I' 0
(Mag./Ang.)
2-25
Typical S-Parameters
1It1
$,1
Freq. (MHz)
100
500
1000
1500
2000
2500
3000
3500
Mag.
0,66
0.59
0,59
0.59
0.61
0.60
0.62
4500
6000
0.62
0.82
0.60
0.60
6000
0,62
4000
5500
O.Sl
(dS)
,Mag.
Ang.
-52
29.0
22.0
16.5
13.1
10.8
8.8
7,2
28.3
12.5
6.71
4.54
3.48
:t75
2.28
1.93
1.70
1,50
1.35
1,23
1,11
152
101
-139
-169
177
165
159
148
141
132
126
118
112
104
5.7
4.6
3.5
2.6
1.8
0.9
IdB)
-39.2
32
-37.7
-29.6
-27.5
-25.5
-24.0
-22.7
21
-21.4
10
0,0
-9
-20,0
-19.0
-20
-16.8
-16.1
eo
65
53
43
-29
-17.2
Mag.
0,01
0.03
0.03
0.04
0.05
0.05
0.07
0,09
0.10
0.11
0.14
0.14
0.16
S~2
$12
Ang.
Ang.
69
41
45
49
50
51
52
49
47
45
42
35
31
Mag.
0.90
0,5/5
0.47
0.47
0.47 .
0.49
0,50
0.54
0.57
O.eo
0.65
0.66
0,67
Ang.
-16
-33
-37
-41
-50
-61
68
-eo
-85
-94
-102
-112
-122
100
Fli;'
GENERAL PURPOSE
TRANSISTOR
HEWLETT
a:~ PACKARD
HXTR -6106
Features
GUARANTEED LOW NOISE FIGURE
2.7 dB Maximum FMIN at 2 GHz
HIGH ASSOCIATED GAIN
11.5 dB Typical G a at 2 GHz
WIDE DYNAMIC RANGE
HERMETIC PACKAGE
eASE
4508tO:OOo'iD
tyP.
Description
Symbol
VCBO
Vceo
VEW
10
PT
TJ
TSTG
Parameter
ClIector to Base Voltage
ClIector to Emitter Voltage
Emltta r to Sase Voltage
DC ClIector Current
Total Device Dissipation
Junction Temperature
Storage Tem perature
Lead Temperature I Soldering
10 seconds each lead,
Limit
SOV
20V
1.5V
70mA
900mW
Outline HPAC-70GT
3OOC
-65C 10
200C
+250C
In
Notes:
1. A BJC maximum of 185 C/W should be used for derating
and junction temperature calculations (T J = Po X BJC +
TCASEL
2. A MTTF of 1.0 x 107 hours will be met or exceeded when the
junction temperature is maintained under TJ = 200C (based
on an activation energy of 1.1 eV!. For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
101
Iceo
Iceo
hFE
FMIt<
G.
Plde
M/L-STO750
Parameter. and Test Condlllons
Test Method
3011 ".
Col/ector-Emitter Breakdown Voltage at Ie 100"A
3041.1
Collector-Emitter Leakage Current at Vet! '" 15V
Collector Cutoff Currant at Vee; 15V
3036.1
Forward Current Transfer Ratio at VeE 15V. Ie ISmA
3076.1'
Minimum Noise Figure
f"'2 GHz
4 GHz
3246.1
Associated Gain
~
Vee; 15V.lc ~ 10 rnA
4 GHz
f~2 GHl
Associated Output Power at 1dB Gain Compression
Vee ~ 15V, Ie = lOrnA
Units
Min.
V
nA
nA
30
500
100
Max.
Typ.
50
dB
10.0
120
220
2.5
3.8
2.7
11.5
9.0
dBm
15
~
~
""8
f-
<t
i:l
12
2'
22
iii
:!!
1S
16
;;
10 r'
...
"
"12
r-
= 2GHz ~
1--1-- . - - - .
4G~Z
..
Cl
UJ
f-
10
"
"U
0
~z
.t
I--
4G~z
"
.t
::l
'"0z
veE" 10-15V
~
/
II.
-..
Xv
!II V/zV'
'IV V1.___ 1v
.......
15
20
25
25
30
(mAl
10
20
'\
-'
15
......
.....
~~
10
COLLECTOR CURRENT
10
..
FREQUENCY (GHz)
11
2GHz
FMIN
"u:w
12
-.- .-
Cl
a:
o
o
AsSOtAfED~A1N
11
20
Freq. (GHz)
Fmin (dB)
G. (dS)
f' 0
RN(D)
1.0
1.8
14.3
.10/60
48.9
15
2.1
13.3
.27/132
19.1
2.0
2,4
11.6
.46/156
9.9
3.0
3,4
8.9
.53/167
8.4
4.0
4.3
6.9
.61/174
6.4
30
102
10V, Ic
5mA
VCE
= 15V,
811
Freq. (MHz)
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
Mag.
0.77
0.72
0.70
0.70
0.69
0.68
0.67
0.66
0.66
0.66
0.68
0.66
0.68
0.67
0.69
0.68
0.69
0.71
0.70
0.76
0.71
Ic
= 10mA
821
Ang.
-36
-70
-95
-113
-126
-136
-143
-149
-154
-159
-174
177
169
163
156
152
142
138
130
124
121
(dB)
26.4
256
24.1
22.7
21.3
20.1
19.0
18.0
17.0
16.1
128
10.5
85
7.0
5.6
4.5
3.6
2.5
1.8
0,9
0.0
812
Mag.
20.8
19.0
16.0
13.6
11.6
10.1
8.9
7.9
7.0
6.4
4.3
3.3
2.6
2.2
1.9
1.7
1.5
1.3
1.2
U
1.0
103
Ang.
157
139
125
115
lOS
102
97
93
91
86
72
61
50
39
31
21
12
4
-5
-13
-23
(dB)
-38.4
-34.0
-32.0
-31.0
-30.5
-29.9
-29.6
-29.4
-29.1
-28.9
-27.0
-27.1
-26.2
-25.0
-24.1
-23.1
-22.2
-21.2
-20.5
-19.7
-19.1
Mag.
0.012
0.020
0.025
0.026
0.030
0.032
0.033
0034
0.035
0.036
0040
0.044
0.049
0.056
0.062
0,070
0.Q78
0.087
0.094
0103
0.111
822
Ang.
67
55
46
41
37
36
35
35
34
35
36
40
42
44
46
46
47
46
42
42
38
Mag.
0.93
0.82
0.71
0.64
0.59
0.56
0.54
0.54
0.53
053
048
0.50
0.50
0.54
0.54
060
0.60
0.62
0.66
0.67
075
Ang.
-12
-21
-26
29
-31
-33
-34
-35
-36
-36
41
-51
-60
-67
71
-85
-92
-102
-111
-120
-129
rli~ HEWLETT
a!~ PACKARD
LOW NOISE,
HIGH PERFORMANCE
TRANSISTOR
Features
-I
HXTR7111
ED
1-3.3:.~,30111
c~
,.....,.........i-I
5tT~pO:I
.1 (.OO4)
HERMETIC PACKAGE
U (D.OS)TYP.
l'
J...t..J:'==:::r..........,,~,..;===:::J1
Outline HPAC100
Description
(TCASE = 25 C)
Symbol
VCBO
VCEO
VEBO
Ie
PT
TJ
T8TG
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
DC Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Value
sov
18V
1.5 V
65mA
600mW
300C
-65C
to
2ooC
Lead Temperature
(Soldering 10 seconds each lead +250C
"Operation in excess of anyone of these conditions may result
permanent damage to this device.
In
Notes:
1. A 0JC maximum of 170C/W should be used for derating
and junction temperature calculations (T J = Po x 0JC +
TCASE).
2. A MTTF of 1 x 107 hours will be met or exceeded when the
junction temperature is maintained underTJ = 200'C (based
on an activation energy of 1.1 eV). For operation above this
condition, refer to page 108. "Reliability Performance of
Bipolar Transistors".
104
Unlls
Min.
3001.1'
30
3011.1'
18
3036.1"
nA
Symbol
BVC80
BVCEO
leBo
ICEO
3041.1
nA
hFE
3076.1
IT
FMIN
Ga
IOV, le-l0 mA
50
50
55
175
GHz
6.0
dB
1= 1000 MHz
f= 2000 MHz
1= 4000 MHz
Associated Gai n
VeE = 10 V, Ic = 10 mA
1,2
1.7
2.6
3246.1
3.4
dB
f = 1000 MHz
1=2000 MHz
f=4oo0MHz
P'dS
G'dS
C'2E
Max.
Typ.
f~
18.5
13.8
8.7
3246.1
8.1
1 MHz
dBrn
18.5
dB
9.1
pF
0.27
20r-------r---,,------,-----,
0'
15
i(j
i5
"-
c
~
'"
1.0
'" ~
1.5
2.0
'-....
"""-
3.0
"
"""4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
.........
7.0
25
6.0
iii
"::!
"u:
5.0
Ga AT 1 GHz
20
!!l
0
15
";;j
10
";;
;;
:>
"'i3z
105
20
15
'" ~
j
~
10
~
i5
VCE= 10 V, Ic= 10 mA
-"-
~
"
Frequency
(MH.)
FMIN
GMIN
(dB)
(dB)
Mag.
l'0
Rn
Ang.
(ohms)
1000
1.2
18.5
0.22
141
2.6
2000
1.7
13.8
0.43
174
3"3
4000
2.8
8.7
0.57
-138
11.6
Vee"" 15 V
ic'" l8mA
1.0
2.0
3"0
4.0
FREQUENCY (GHzj
$21
$12
522
Freq. (MHz)
Mag.
Ang.
(dB)
Mag.
Ang.
Mag,
Ang.
Mag.
Ang.
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.68
0"64
0"65
0.63
-46
-78
-105
-120
131
-140
-148
154
160
164
-178
171
164
156
149
141
132
123
112
103
93
27"8
26.1
246
20.2
16.5
13.6
11.4
9.7
8.5
7.5
154
135
121
113
106
100
95
90
86
83
68
57
45
0"02
002
63
5A
47
43
39
43
0"93
0"80
0.70
0.63
0.58
-32
43
0.52
0"50
0.62
0.61
0.61
0.60
0.61
0.61
0.61
0.61
0.62
0.63
0.63
0.62
0.61
0.60
0.61
0"62
0.62
Typical S-Parameters
24.4
22.7
2U
19"7
18.6
17"5
16"6
157
12.4
101
8.2
6B
5"5
4.5
3.5
V
2.0
1.2
0.5
6B
6",
42
3.2
2.6
2.2
L9
L7
1.5
1.4
1.3
1.2
0"03
0.03
0.Q3
0.04
0.04
0.04
0.04
0.05
0"06
43
43
43
49
56
60
61
61
59
57
53
48
43
36
0.Q7
24
14
5
-4
-14
22
-31
0.09
0.11
0.13
0.15
0.18
0.21
0.23
0.26
34
0"03
-15
-26
-34
-35
-36
-36
-37
-40
-41
50
57
-68
75
85
-93
-102
-110
-118
-131
-140
0.54
0.48
0.47
0.46
0,47
0,49
0.52
0.54
Og
0.57
0"62
0"63
067
0.71
(VCE = 15 V, Ic = 18 mAl
$21
S11
$12
$22
Freq, (MHl)
Mag.
Ang.
(dS)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.63
0.61
0.62
062
0.61
0.60
0.60
0.60
060
0.60
0.61
0.61
-59
-95
-119
29.7
30.6
23.5
18.3
14.7
12"1
102
149
129
115
107
101
95
91
87
83
81
67
55
44
33
23
13
4
-6
16
-24
33
0.Q1
64
46
48
43
0.90
075
0"65
0"60
0"56
-18
-26
M2
0"63
063
0"62
0.62
060
0.62
0.63
0.63
133
143
151
-157
-162
167
170
177
168
161
153
147
139
130
121
110
102
91
27.4
25.3
23.4
21.7
20.2
19.0
17.8
16.9
16.0
12.7
lOA
8.3
6.9
5.6
4.6
3.5
2.9
2"3
U
0.8
8"9
7.8
7.0
6.3
4.3
3.3
2.6
2.2
1.9
1.7
1.5
1.4
1.3
1.2
1.1
106
0.02
0.02
0"02
0.03
0.03
0.03
0.03
0.03
0"03
0.04
0.06
0.07
OD9
0.11
0",3
0.15
0",8
0.21
023
0.26
48
44
49
49
51
51
60
65
67
68
ee
64
60
56
52
46
40
053
0.52
OBO
049
0.48
048
0"50
0"52
0.54
056
0.60
0"60
0.65
0.65
0.70
0.74
-3~
-31
-31
32
32
32
35
-35
-46
-53
-64
-72
-83
-89
-100
106
116
128
-137
107
Flin-
HEWLETT
~~ PACKARD
RELIABILITY
PERFORMANCE
BIPOLAR TRANSISTORS
HXTR-2000
HXTR-3000
HXTR-5000
HXTR-6000
HXTR-7000
PRODUCT SERIES
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability information for all
families of devices.
These bipolar transistor products utilize a common manufacturing process, to include similar metallization systems,
ion implantation, and self-alignment techniques, maintaining in this fashion a high degree of uniform quality and
reliability.
The reliability performance of this bipolar transistor family is
governed primarily by a thermally activated process. Hence,
the junction temperature Tj of the device dictates the performance achieved under various applications.
Applications
This information represents the capabilities of the generic
device. Performance criteria and Mean Time To Failure
(MTTF) values presented here are achieved with MIL-S19500 level sampling.
Temperature
Cycling
Thermal
Shock
Solderability
Hermeticity
Moisture
Resistance
Vibration
Variable
Frequency
Mechanical
Shock
Terminal
Strength
Minimum
Stress Duration
1000 Hours
Typical Performance
Criteria, LTPD
orA
5
Test Method
M1L-STD-750
Method 1026.3
MIL-8TO-883
Method 1008
Stress Condition
TJiTcH ~ ZOOC
Tes! Condition D,
TA=200C
1000 Hours
MIL-STD750
Method 10381
1039
MIL-STD-883
Method 1010
MIL-STD-883
Method 1011
MIL-STD-202
Method 208
MIL-STD-883
Method 1014
MIL-STD-202
Method 106
MIL-STD-750
Method 2056
Test Condition A.
TA ~ 200C
1000 Hours
Test Condition D,
--135 0 C to 200 0 C
Test Condition D,
--135 C to 200 Q C
100 cycles
15
100 cycles
15
TPbSn @230C
5 sec. dwell
15
KR-85/Dry N2
Penetrant Dye
65 C/98% R.H.
N/A
15
10 days
15
100 to 2,000 Hz
4 Cycles @ Sweep
Rate <4 min.
15
Acceleration @
1500G'5
TBA
(PaCkage Related)
15
30 sec. duration
15
MIL-STO-883
Method 2002
MIL-STO-750
Method 2036.3
108
./
400
350
300
i'"
250
1',
~ ...
200
~I"
r--...~
;;
w'
a:
::>
150
""<t
~,
a'i
""
I.....
100
..... ~
A
50
25
10'
104
10 3
106
105
107
10'
109
MTTF IHRS.I
Junction Temperature
Curve
(Hours)
TJ
Activation
Energy
3.5 x 106
125C
UeV
1.0 x 107
ZOOC
1.1 eV
MTTF
YS.
Pan
Numb~r
Notes:
1. To determine MTTF, calculate Tj == Pr x HJC + TeAsE and refer to the appropriate curve.
2. To determine the maximum bias conditions (Pr "" VeE x Ie) to achieve a minimum MTTF, refer to the appropriate curve for Tj max
and calculate Pr
max
- TJ max -
(-)JC
TeASE. Do not exceed the absolute maximum Pr ratings specified for the transistor.
109
ABSTRACTS OF
APPLICATION NOTES AND BULLETINS
The Microwave Semiconductor Division field sales force is supported by a division applications staff. These technical
specialists investigate circuit applications of most interest to the users of these semiconductor devices. The results of these
investigations are reported in application notes or in brief application bulletins. Many of these publications have been
presented in the appropriate catalog sections in condensed form. A complete list with brief abstracts is presented here.
Below is a brief summary of Application Notes and Bulletins for diodes and transistors. All of the Application Notes
and Bulletins are available from your local HP Sales Office or nearest HP Components Authorized Distributor or
Representative.
.
Bipolar Applications
944-1 Microwave Transistor Bias
Considerations
A practical discussion of the temperature dependent variables in a microwave transistor that cause RF performance
degradation due to changes in quiescent point. Passive circuit networks that minimize quiescent point drift with
temperature are analyzed. and the general equations for dc
stability factors are given. Emphasis on practical circuit
design is highlighted by typical circuit examples.
Describes in detail the design of a single-stage, state-of-theart, low noise amplifier at4 GHz using the HXTR-6101 silicon
bipolar transistor. Both the input and output matching networks are described.
AB 10
110
111
113
SCHOTTKY
BARRIER
DIFFUSED p-TYPE
RING
SCHOTTKY
BARRIER
SCHOTTKY
BARRIER
p OR n-TYPE SI LICON
n-TYPE SILICON
PASSIVATED DIODE
MESH
Mesh Diodes
Hewlett-Packard's patented mesh diode is made
by depositing metal through a screen to the
semiconductor surface. Many closely spaced
diodes are created on the chip. The diode
contacts are too small for thermocompression
bonding. Contact is made by pressing a sharp
metal point against one of the metal contacts
on the diode. The large number of contacts on
the chip provide a good yield to this operation.
Passivated Diodes
I = Is
0.026))
Hybrid Diodes
The breakdown voltage limitation was solved
with the invention of the hybrid process.
Hewlett-Packard's patented process combines a
Schottky diode with a p-n junction, eliminating
the premature breakdown of the passivated
diode without sacrificing the picosecond
switching response of the Schottky barrier.
Breakdown voltage specifications as high as 70
volts are available. Hybrid diodes are numbered
from 5082-2800 to 2826 and also 5082-2836.
The beam lead version is 5082-2837.
The dual nature of the hybrid diode limits the
lowest capacitance to a picofarad. This limits
115
---.---
~xp(V-IRS~ - ~
Mixers
Detector Applications
For system applications with relaxed
requirements on sensitivity the video detector
receiver is a good alternative to the
superheterodyne receiver. The sensitivity is
degraded about 50 dB, but the circuitry is
simplified and broad bandwidth is easily
attained without the problem of tracking the
local oscillator frequency.
The important parameters are tangential signal
sensitivity (TSS) and voltage sensitivity (")I).
Both of these, as well as video resistance (Rv),
are guaranteed for these detector diodes.
Typical detector performance is shown for
mixer diodes, but detector diodes are designed
for superior performance for this application.
116
Zero bias Schottky detector diodes are available in the glass package (outline 15) and
117
<=3C=J
Chip
01
Beam Lead
07
Ceramic/Epoxy
C2
Hermetic
H2
Ceramic Pili
Frequency
to 12 GHz
5082-0013
HSCH-5336
HSCH-5338
5082-2774
5082-2794
5082-2765
5082-2785
5082-2295
5082-2297
12-18 GHz
5082-0013
HSCH-5332
HSCH-5334
5082-2774
to 140 GHz
i'i!:J
=={QF=
c:J
44
5082-2295
HSCH-5330
~
Frequency
to 140 GHz
Beam Lead
04
HSCH-5530
HSCH-5531
=9=
{=
~~ +
0
-,t1t~
"7~J(
:' 1
IJ
Beam Lead
03
Beam Lead
08
Low Cost
E-1
Broadband
C4
Hermetic
H-4
t02 GHz
5082-9697
5082-9697
5082-2831
5082-2271
5082-2231
2-4 GHz
5082-9697
5082-9697
5082-2271
5082-2231
4-8 GHz
5082-9395
5082-9395
5082-2272
5082-2233
8-12 GHz
5082-9397
5082-9397
5082-2279
12-18 GHz
5082-9399
5082-9399
5082-2280
Frequency
118
cJC=3
~
n
+
D
Glass
Package
15
Ceramic/
Epoxy
C2
C]
0
Hermetic
H2
Ceramic
Pill
44
Double
Stud
49
Frequency
Chip
01
Beam Lead
07
to 2 GHz
5082-0087
HSCH-5316
5082-2817
5082-2400
5082-2350
5082-2210
5082-2203
5082-2707
5082-2712
2-4 GHz
5082-0023
HSCH-5316
5082-2565
5082-2520
5082-2210
5082-2203
5082-2707
5082-2712
4-12 GHz
5082-0023
HSCH-5316
HSCH-5318
5082-2207
5082-2209
5082-2200
5082-2202
5082-2701
5082-2702
5082-2713
5082-2711
12-18 GHz
5082-0029
HSCH-5312
HSCH-5314
5082-2207
5082-2273
5082-2723
HSCH-5310
to 140 GHz
~
Frequency
to 140 GHz
Beam Lead
04
HSCH-5510
HSCH-5511
~ {= +"
IJ
Frequency
Beam Lead
03
to 2 GHz
5082-9696
=9~)F==
0
Low Cost
08
Broadband
E-1
Hermetic
C4
H-4
5082-9696
5082-2830
5082-2291
5082-2263
2-4 GHz
5082-9696
5082-9696
5082-2277
5082-2291
5082-2263
4-8 GHz
5082-9394
5082-9394
5082-2277
5082-2292
5082-2263
8-12 GHz
5082-9396
5082-9396
5082-2294
12-18 GHz
5082-9398
5082-9398
5082-2294
119
Glass
Package
15
Ceramic!
Epoxy
C2
Hermetic
H2
5082-2824
5082-2755
5082-2787
5082-2207109
5082-2774/94
5082-2200103
5082-2765/85
G <=3:=J ~
Chip
01
Detector
Part
Numbers
5082-0009
Beam Lead
07
HSCH-5300
Series
[12
?.oJ
c::J
:',~::I
CJ
Q
--
Ceramic
Pill
44
Double Stud
49
5082-2750
5082-2751
Zero Bias
G c:JC=J ~
'lO=90P=
LN
Detector
Part
Numbers
Chip
01
Beam Lead
07
5082-0013
HSCH-5330
Series
Glass
Package
15
Ceramicl
Epoxy
C2
Hermetic
H2
HSCH-3486
5082-2774
5082-2794
5082-2765
5082-2785
120
Ceramic
Pill
44
Double Stud
49
HSCH-3207
HSCH-3206
Commercial
Data Sheet
Standard
Hi-Rei
Data Sheet
Reliability
Data Sheet
192
176
176
176
176
203
203
203
203
203
Part No.
Description
HSCH-0812
HSCH-0813
HSCH-0814
HSCH-0815
HSCH-0816
HSCH-l00l
HSCH-l111
HSCH-3206
HSCH-3207
HSCH-3486
161
161
161
HSCH-5310
HSCH-5311
HSCH-5312
HSCH-5313
HSCH-5314
127
127
127
127
127
197,199
197.199
197,199
197,199
197,199
HSCH-5315
HSCH-5316
HSCH-5317
HSCH-5318
HSCH-5319
127
127
127
127
127
197,199
197,199
197,199
197,199
197,199
HSCH-5330
HSCH-5331
HSCH-5332
HSCH-5333
HSCH-5334
127
127
127
127
127
197,199
197,199
197,199
197,199
197,199
HSCH-5335
HSCH-5336
HSCH-5337
HSCH-5338
HSCH-5339
127
127
127
127
127
197,199
197, 199
197,199
197,199
197,199
HSCH-5510
HSCH-5511
HSCH-5530
HSCH-5531
JAN lN5711
133
133
133
133
178
197, 199
197, 199
197,199
197,199
195
JAN lN5712
JANTX lN5711
JANTX lN5712
JANTXV 1 N5711
JANTXV 1 N5712
MIL-S-19500/445 Schottky
MIL-S-19500/444 Schottky
MIL-S-19500/445 Schottky
MIL-S-19500/444 Schottky
MIL-S-19500/445 Schottky
182
178
182
178
182
195
195
195
195
195
186
186
189
172
172
195
195
195
197,199
197, 199
Diode
Diode
Diode
Diode
Diode
TXVB-2810
Hi-Rei 5082-2810
TXVB-2811
Hi-Rei 5082-2811
TXVB-2835
Hi-Rei 5082-2835
TXVW-5300 Series Hi-Rei HSCH-5300 Beam Leads
TXVW-5500 Series Hi-Rei HSCH-5500 Beam Leads
121
141
170
192
195
195
205
205
203
Page Number
Commercial
Data Sheet
Standard
Hi-Rei
Data Sheet
Reliability
Data Sheet
178
182
195
195
170
195
207
205
205
195
Part No.
Description
1N5711
1N5712
141
141
1N6263
5082-0009
5082-0013
5082-0023
5082-0024
141
125
125
125
125
5082-0029
5082-0031
5082-0041
5082-0057
5082-0058
125
125
125
125
125
205
195
205
195
195
5082-0087
5082-0094
5082-0097
5082-2080
5082-2200
125
125
125
141
146
195
195
195
195
197
5082-2201
5082-2202
5082-2203
5082-2207
5082-2208
146
146
146
146
146
197
197
197
197
197
5082-2209
5082-2210
5082-2231
5082-2233
146
146
151
197
197
201
5082-2263
151
151
201
201
5082-2271
5082-2272
5082-2273
5082-2274
5082-2277
5082-2279
5082-2280
151
151
154
154
151
151
151
201
201
205
205
201
201
201
5082-2291
5082-2292
5082-2294
5082-2295
5082-2296
151
151
151
154
154
201
201
201
205
205
5082-2297
5082-2298
5082-2301
5082-2302
5082-2303
154
154
141
141
141
205
205
203
203
203
122
176
Page Number
Commercial
Data Sheet
Standard
Hi-Rei
Data Sheet
Reliability
Data Sheet
Part No.
Description
5082-2305
5082-2306
5082-2308
5082-2350
5082-2351
141
141
141
154
154
5082-2356
5082-2370
5082-2396
5082-2400
5082-2401
141
141
141
154
154
5082-2520
5082-2521
5082-2565
5082-2566
5082-2701
154
154
154
154
154
203
203
203
203
205
5082-2702
5082-2706
5082-2707
5082-2711
154
154
154
154
205
205
205
205
5082-2712
5082-2713
5082-2714
5082-2723
5082-2724
154
154
154
154
154
205
205
205
205
205
5082-2750
5082-2751
5082-2755
5082-2765
5082-2766
5082-2774
5082-2775
5082-2785
165
165
165
146
146
146
146
146
207
207
203
197
197
197
197
197
5082-2786
5082-2787
5082-2194
5082-2795
5082-2800
146
165
146
146
197
203
197
197
141
195
5082-2804
5082-2805
5082-2810
5082-2811
5082-2813
141
141
141
141
141
195
195
195
195
195
123
176
176
176
186
186
203
203
203
203
203
203
203
203
203
203
Page Number
I
Part No.
Commercial
Data Sheet
Description
Standard
HI-Rei
Data Sheet
Reliability
Data Sheet
5082-2814
5082-2815
5082-2817
5082-2818
.5082-2824
141
141
154
154
165
195
195
195
195
195
5082-2826
5082-2830
5082-2831
141
151
195
201
5082-2835
5082-2836
151
141
141
5082-2837
5082-2900
5082-2912
5082-2970
5082-2997
131
141
141
141
141
197,199
203
203
203
203
5082-9394
5082-9395
5082-9396
5082-9397
5082-9398
Beam
Beam
Beam
Beam
Beam
137
137
137
137
137
201
201
201
201
201
5082-9399
5082-9696
5082-9697
5082-9891
137
137
137
125
201
201
201
207
Lead
Lead
Lead
Lead
Lead
Quad
Quad
Quad
Quad
Quad
124
189
201
195
195
rh~
~~
HEWLETT
PACKARD
SCHOTTKY BARRIER
CHIPS FOR HYBRID
INTEGRATED
CIRCUITS
5082-0009
5082-0013
5082-0023
5082-0024
5082-0029
5082-0031
5082-0041
5082-0057
5082-0058
5082-0087
5082-0094
5082-0097
5082-9891
Features
IDEAL FOR HYBRID INTEGRATED CIRCUITS
PLANAR PASSIVATED CONSTRUCTION
UNIFORM ELECTRICAL CHARACTERISTICS
I-~i~-I
1....-----"=----.,-y
oulllne01
Chip Oimenslons
Description
HP Part Number 5082-
Oimension
0024,
0094
0057,0058
0081,0097
0.10
0.08
(4)
(31
0.06
(251
Bottom
Contact
Au,
Anode
Au,
Anode
10.801
141
(51
Top
Contact
~013, 0023,
0009
0029
0.02
0.10
0.13
0031
Au,
Anode
Au,
Anode
Au,
Au,
Au,
Au,
Cathode Cathode Cathode Cathode
Au,
Cathode
Au,
Anode
Maximum Ratings
Applications
A wide variety of chips are provided which are optimized
for various applications. Typical applications of Schottky
chips are mixing, detecting, switching, gating, sampling
and wave shaping.
125
Nearest
Equivalent
Packaged
'Part No.
5082-
Near8$t
Equivalent
ham Lead
Part No.
5082
Minimum
Breakdown
Voltage
VB/I (V)
IF (mA)
Maximum
Junction
Capacitance
Cjo (pF)
2837
70
15
1.7
20
15
35
1.0
20
1.1
0024
0094
2800
0087
0057
2810
0097
0058
2811
0031
2835
TeSt Conditions
Minimum
Forward
Current
Sitl
101 11
0.8
If! = 10llA
I1IIR""l00IlA
VF= 1 V
111VF" 0.45 V
Vf!=OV
f= 1 MHz
Near8$1
Equivalent
Packa~
9Contacl
Chip
Chip
0023
0041
F'artNo.
5082
Nearest
Equivalent
Beemlead
Part No.
HSCH-
Maximum
Junction
Capacitance
Cjo (pF)
Typical Parameters
Noise
Figura
NF (dB)t11
Tangential
Sensitivity
Tss (dBm)
-54
2713
5316
0,18
6.0
0029
2721
5312
0,13
6.07.0"
-54
0013
HSCH-3200'
5332
0.13
6.0
-42t
0.10
7.0
-55
'Zero
VR=OV
1"'9.375 GHz
Bias
1=1 MHz
.. t=16 GHz
f=10GHz
BW=2MHz
IBIAS '" 20 IlA
2295
0009
9891
Test Conditions
-54
2750
tZero Bias
Note 1: NF Includes 1.5 dB for the IF ampl,fler.
and heating times of 5-10 seconds are recommended. (Note times and temperatures utilized may vary depending on the type,
composition, and heat capacity of the header or substrate used as
well as the metallization systems present.)
1. Cleaning
To remove surface contamination, electronic grade solvents such
as freon (T.F. or T.M.C,! trichloroethane, acetone, de-ionized water,
and methanol used singularly or in combinations are recommended. Typical cleaning times per solvent are one to three
minutes. 01 water and methanol should be used lin that order) in
the final cleans. Final drying can be accomplished by placing the
cleaned dice on clean filter paper and drying with an infrared lamp,
for 5-10 minutes. Acids such as hydrofluoric (HR, nitric (HNC) and
hydrochloric (HCU should not be used.
2. Ole Attach
Eutectic - Eutectic die attaching can be accomplished in one of
two ways - either by 1.1 "scrubbing" the die without a preform and
using the gold on the header to combine with the silicon and or the
non-alloyed gold-plating on the back of the die to form the eutectic,
or 2.l by utilizing a gold-tin eutectic composition preform and
"scrubbing" the chip. Typical stage temperatures of 310' C 10' C,
3. Wire Bonding
Thermocompression is the recommended bonding method for
Hewlett-Packard Schottky chips. Suggested wire is pure gold mesh
(333 lines per inch, 1 mil thick) or 0.7 mil wire. Other bonding techniques such as ultrasonic and thermosonic are not recommended.
For additional reference material, refer to Application Note 974 "Die
Attach and Bonding Techniques".
126
rli~ HEWLETT
~~ PACKARD
HSCH-5300
SERIES
Features
PLATINUM TRI-METAL SYSTEM
High Temperature Performance
NITRIDE PASSIVATION
Stable, Reliable Performance
LOW NOISE FIGURE
7 dB Typical at 16 GHz
HIGH UNIFORMITY
Tightly Controlled Process Insures Uniform
RF Characteristics
Wfjj
RUGGED CONSTRUCTION
4 Grams Minimum Lead Pull
.-l.J
f.=.5~~~~lt
flltll!
6701261
411(1)
lIlMINW
..L::;:f
._
Description
!ll! (!l!1
GLASS
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced
epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated
microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise
lead to IA drift.
SIUCON
Outline 07
Applications
Maximum Ratings
127
Satch'
Matched
HSCH
5318
5319
Barrier
Maximum
Noise
Figure
NF(dS)
IF
Impedance
Maximum
Z'F (0)
Min.
Max.
SWR
5315
5338
5339
Medium
7.2at
16 GHz
200
400
1.S:1
Maximum
Total
Capacitance
CT (pI')
12
0.25
18
0.15
200
400
1.51
12
0.25
18
0,15
6.2 at
9,375 GHz
5334
Maximum
Dynamic
R$$istance
RD (ll)
6.2al
9.375 GHz
5314
Minimum
8reakdown
Voltage
VIIR (V)
Low
5335
72 at
Maximum
Forward
Voltage
VF (mV)
500
375
16GHz
Test
Conditions
~Minimum
.iNFSO.3dB
.iZIF~'25!l
IF~5
IRS10"A
rnA
iF~
VR=OV
MHz
1 rnA
f~l
Satch'
Matched
HSCH-
5316
5317
5312
5313
5310
5$11
5336
5337
5332
5333
5330
5331
Test
Conditions
.l.VF S 15 mV
@5mA
~Minimum
Barrier
Minimum
8reakdown
Voltage
VSA (V)
Medium
Low
Maximum
Dynamic
Resistance
RD (ll)
Maximum
Tolal
Capacitance
Cr (pF)
12
0,25
18
0.15
25
010
12
0.25
18
0.15
26
0.10
IR
10 pA
IF
Maximum
Forward
Voltage
VF (mV)
500
375
1,= 1 mA
VR~ OV
f= 1 MHz
5 mA
--
Symbol
Typical Value
Units
Test Conditions
TSS
-54
dBrn
20pA Bias
Voltage Sensitivity
'l
6,6
rnVl,,'w
Video Resistance
Rv
1400
!l
Symbol
Typical Value
Units
TSS
-44
dBm
Tangential Sensitivity
f= 10 GHz
'Y
10
mVl"W
Video Resistance
Rv
1.8
Mil
128
T esl Conditions
Zero Bias
Video Bandwidth
f = 10 GHz
2 MHz
Typical Parameters
100
<"
.. 10
I-
1i'i
a:
a:
::J
"ca:
1.0
'a:"
;:
f2
I
0.1
2:
0.01
0.2
v, -
0.4
0.6
0.8
0.8
1.0
VF -
FOR\I~ARD
VOLTAGE (V)
129
7.5
7.0
6.5
./
6.0
5.5 1
11
13
15
17
FREQUENCY (GH,j
VS.
Frequency.
SELF BIAS
1.0 mA Self Bia.s
Rs
5.0
RJ
393
CJ
0.11
5.1
244
0.16
Part Numbers
5.2
RJ
232
0.11
5.0
150
0.12
5.0
178
0.16
5.0
109
0.19
Rs
Cj
EXTERNAL BIAS
50 /lAOe Bla$
20 /lADe Bias
R,
1240
e,
Rs
Rj
Rs
2.8
0.11
4.7
5.1
2050
0.18
3.9
Part Numbers
130
Cj
618
CJ
0.12
Rs
2.7
Rj
211
0.13
665
0.19
4.7
242
0.20
F/idl
BEAM LEAD
SCHOTTKY DIODE
HEWLETT
~~ PACKARD
5082-2837
Features
FAST SWITCHING
CATHODE
HIGH BREAKDOWN
BEAM LEAD EQUIVALENT OF 5082-2800
PLATINUM TRI-METAL SYSTEM
DIMENSfQNS IN !-1m fl!1000mc:h)
Description
Applications
High level detection, switching, or gating; logarithmic or AD converting; sampling or wave shaping are jobs the 50822837 will do better than conventional PN junction diodes.
The low turn-on voltage and subnanosecond switching
makes it extremely attractive in digital circuits for DTL
gates, pulse shaping circuits or other low level applications.
Its high PIV allows wide dynamic rangeforfast high voltage
sampling gates.
Maximum Ratings
Operaling Temperature Range
Storage Temperature Range .....
Minimum Lead Strength .... 4 grams
Diode Mounting Temperature
350 0
131
Symbol
Min.
Max.
Uniu
Test Conditions
IR'" 10pA
Breakdown Voltage
VSR
70
Forward Voltage
VF1
Forward Voltage
VF2
Reverse Leakage
11'1
Volts
410
mV
1.0
IF2'" 15mA
200
V
nA
2.0
pF
100'"
pS
I F =5mA
Krakauer Method
IF1'" lmA
VR '" 50V
Current
Capacitance
Co
Effective MinoritY
Carrier Lifetime
* Typical
Typical Parameters
s
.E
...
1000/..----+----+-----1
~
ilia:
15O'C
a:
a:
100'e
::>
lutc
(J
..
2$'C
a:
;:
a:
(J
O'c
-50"C
>
f!
C
I
...
I
a:
1L-~LU~L_~LWJllL_~LLUlW
1.0
1.2
0.01
0.1
1.0
10
2.0
I
-~~
.
1
...
i:L 1.5
.!!
w
a:
a:
:i
(J
r :\J
I 1-
'"ffi
0' 0.5
a:
I
!:
20
v. -
30
40
10
50
VR
20
I
30
40
50
132
r/ifl'l
HEWLETT
~~ PACKARD
HSCH-5510
HSCH-5511
HSCH-5530
HSCH-5531
Features
MONOLITHIC PAIR
Closely Matched Electrical Parameters
LOW CAPACITANCE
0.10 pF Max. at 0 Volts
I-------~:~:------<oj
L
r
,
g
Description
/GOlOBEAM
These dual beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced
epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated
microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise
lead to IR drift.
($1
q 9
'PLATINUM
METALLIZATION
GLASS
Outline 04
Applications
Maximum Ratings
(for Each Diode)
f.3l
-65" C to +175 0 C
-65 0 C to +200 0 C
pull on either lead
C for 10 sec. max.
133
Number
HSCH5510
5530
IF
Impedance
Maximum
Nolae
I'lgure
Barrier NF(dBI
Z,,:(!l}
Min.
Max.
Maximum
&WR
200
400
1.5:1
Minimum'
Breakdown
Yoltage
YIIR (V)
,Maximum
Dynamic
Resistllnce
Ro(n)
4V
20
Maximum
Maximum
Max.
Tolal
Max. Forward
Yoltage
.lRO Capacitance .lCT
(n)
Or (pF) (pF) YF(mY)
500
Medium
7.0@
l6GH,
Low
Max.
.lYF
(mY)
Test
DC l,oad Resistance =
L.O. Power = 1 mW
iF 30 MHz, t.5 dB NF
Conditlon$
on
IF~5
ill'; 10 I'A
0.02
0.10
VA;OV
1=1 MHz
mA
10
375
i~=1
mA
HaCH-
Barrier
, 5511
Medium
5531
MInimum
Breakdown
Vollage
YBII (VI
Maximum
To181
Max.
.lOr
(0)
Capacitance
CT(pF)
0.10
0.02
Max.
jRo
20
4V
Low
Test
Conditions
Maximum
Dynamic
RuistllncIJ
Ro (0)
IR$10pA
(pF)
Maximum
Forward
Yoltage
VF(mVj
Mal(.
J.VF
(mV)
500
10
375
VR;OV
1=1 MHz
iF;5 mA
IF =1 mA
Symbol
Typical Value
Units
Test Condflions
TSS
-55
dBm
20/,A Bias
VOltage Sensitivity
l'
9.0
mVlI'W
Video Resistance
Rv
1350
Symbol
Typical Value
Units
TSS
-46
dBm
Video Bandwidth
=2 MHz
f=10GHz
l'
17
mVl/'W
Video Resistance
Rv
1.4
Mil
134
Tesl Conditions
Zero Bias
Video Bandwidth
f= 10GHz
2 MHz
Typical Parameters
-,.?;?'
10
1.0
.I
12e?C/
o. 1
0.0 1
17
0.2
/1,.
II
,-
"'z
10
'If
/1
/ I
I
1.0
"
125"C
E
.!!-
0.1
5S"C
.
:
I
"SfrC
0.4
'
0.01
0.8
0.6
25'C
f
o
VF (VOLTS)
!
0.2
0.4
0.6
0.8
VF (VOLTS)
7.S
" -" -
7.0 I--
~
w
a:
:J
"'wu:
6.5
az'"
6.0
"
I
-+----
. ..
--,~
r--- -- -.
./
~.
11
13
15
17
FREQUENCY (GHz)
135
0.03 pF
O.04nH
0.1 nH
Rj
lUl
Cj
SELF BIAS
HSCH-S510, -5530
...Rj.
267
Cj
0.11
EXTERNAL BIAS
Part Numbers
HSCH-5510 ..s530
20pA DC Blas
C1 (pF)
Rj (fl)
1400
0.00
136
5O/JADC Blas
Rj(n)
G(pF)
0.09
560
I
I
Flin-
HEWLETT
a!~ PACKARD
Features
PLANAR ,SURFACE
Easler Bonding, Stronger Leads
NITRIDE PASSIVATED
Stable, Reliable Performance
HIGH UNIFORMITY
Tightly Controlled Process Insures Uniform
RF Characteristics
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure
uniformity and repeatability of this planar passivated
microwave semiconductor.
During manufacturing, gold leads are deposited onto a
glass passivation layer before the wafer is separated. This
provides exceptional lead strength.
These monolithic arrays of Schottky diodes are interconnected in ring configuration. The relative proximity of
the diode junctions on the wafer assures uniform electrical
characteristics among the four diodes which constitute a
matched quad. They are designed for microstrip or stripline
use. The leads provide a good continuity of transmission
line impedance to the diode.
Outline D8
Maximum Ratings
Junction Operating and Storage
Temperature Range ... . . . . . . . . . . . . -65 C to +150 C
DC Power' Dissipation at 25 C ......... 75 mW/Junction
Derate linearly to zero at Tj(op) max.
(Measured in infinite heat sink)
Diode Mounting
Temperature ................... 220 C max. for 10 sec.
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
DIMENS1ON$IN
MiLLIMETERS
AND (IOICHES)
Outline 03
Applications
These diodes are designed for use in double balanced
mixers, phase detectors, .AM modulators, and pulse
modulators requiring wideband operation and small size.
137
Selection Guide
pa~
Outline
Barrier
To20Hz
Beam Lead
Medium
Low
8120Hz
480Hz
5082-9696
5082-9696
5082-9394
5082-9396
5082-9398
5082-9697
5082-9697
5082-9395
5082-9397
5082-9399
Typical
Parameters
Electrical Characteristics at TA = 25 C
Maximum Capacitance
Cr (pF)
Pari
Number
12180Hz
2-40Hz
Maximum
Maximum
Capacitance
VF
Difference Difference
';VF (mV)
,;CT (pF)
Maximum
Dynamic
Resistance
Ro (0)
Forward
Voltage
VF (V)
5082-
Outline
Diagonal
Adjacenl
9697
08
0.55
0.74
0.10
12
0.25
9395
08
0.35
0.47
0.10
15
0.25
9397
03
0.20
0.27
0.05
16
0,30
9399
03
0.15
0.20
0.05
16
0.30
9696
08
0.55
0.74
0.10
12
0.35
9394
08
0.35
0.47
0.10
15
9396
03
0.20
0.27
0.05
16
0.35
0,45
9398
03
0.20
0.05
16
0.45
Barrier
Low
Medium
0.15
Test
Conditions
VR~O
Ip=5 mA
f= 1 MHz
Example:
CAOJACENT = C1 +
where Ri is the resistance of the junction. Junction resistance of a diode with DC bias is quite accurately calculated by
1
C2
+ C3 +C'4
= C2 = C3 = C4 = 1.0 pF
= 1 + 113 = 1.333 pF
Assuming C1
CAOJACENT
Ri = 26/16 where
is independent of current.
The dynamic resistance is more easily measured. If series
resistance is specified it is usually obtained by subtracting
the calculated junction resistance from the measured
dynamic resistance.
x COIAGONAL.
Hewlett-Packard guarantees maximum adjacent capacitance through 100% testing to the limits shown on the data
sheet. Maximum diagonal capacitance values have been
calculated.
C1 x C2 + C3 x C4
C1+C2
C3+C4
= C3 = C4 = 1.0
Assuming C1 ~ C2
COIAGONAL
= 1/2 +
1/2
IF=l mA
Measured
between
Adjacent Leads
Schottky diode resistance may be expressed as series resistance, Rs, or as dynamic resistance, Ro. These two terms
are related by the equation
Ro = Rs
20
Figure 1.
pF
= 1.0 pF
138
.s
I-
ffi
iiia:
a:
a:
:::>
u
c
a:
a:
:::>
u
a:
f2
f2
0.20
0.40
0.60
0.80
0~----0~.~20~--~O.L40~--~O.~60~--O~.~80~--1~.OO
1.00
139
~---
.. - - - . - - - -
Thermocompression: See Application Note 979 "The Handling and Bonding of Beam Lead Devices Made Easy". This
method is good for hard substrates only.
Wobble: This method picks up the device, places it on the
substrate and forms a thermocompression bond all in one
operation. This is. described in MIL-STD-883B Method
2017 and is intended for hard substrates only. Equipment
specifically designed for beam lead wobble bonding is
available from KULICKE and SOFFA in Hursham PA.
2. Handling
In order to avoid damage to beam lead devices, particular
care must be exercised during inspection, testing, and
assembly. Although the beam lead diode is designed to
have exceptional lead strength, its small size and delicate
nature requires that special handling techniques be
observed so that the devices will not be mechanically or
electrically damaged. A vacuum pickup is recommended
for picking up beam lead devices, particularly larger ones,
e.g., quads. Care must be exercised to assure that the
vacuum opening of the needle is sufficiently small to avoid
passage of the device through the opening. A #27 tip is
recommended for picking up single beam lead devices. A
20X magnification is needed for precise positioning of the
tip on the device. Where a vacuum pickup is not used, a
sharpened wooden Q-tip dipped in isopropyl alcohol is
very commonly used to handle beam lead devices.
3. Cleaning
For organic contamination use a warm rinse of trichorethane followed by a cold rinse in acetone and methanol.
Dry under unfrared heat lamp for 5-10 mintues on clean
filter paper. Freon degreaser may replace trichloroethane
for light organic contamination.
4. Bonding
See Application Note 992, "Beam Lead Attachment
Methods", for a general description of the various methods
for attaching beam lead diodes to both hard and soft
substrates.
Rellow: By preparing the substrate with tin or solder plating, reflow soldering can be suitably preformed using a
modified wire bonder. The probe is used as a soldering tip.
WEST BOND or UNITEK bonders make suitable bonds.
140
Flin-
HEWLETT
~~ PACKARD
SCHOTTKY BARRIER
DIODES FOR
GENERAL PURPOSE
APPLICATIONS
1N5711'
lN5712'
5082-2301
5082-2302
5082-2303
5082-2305
5082-2800/10/11/35'
5082-2900'
HSCH-lOO1 (1 N6263J'
Features
LOW TURN-ON VOLTAGE: AS LOW AS
0_34VAT 1mA
PI CO-SECOND SWITCHING SPEED
HIGH BREAKDOWN VOLTAGE: UP TO 70V
MATCHED CHARACTERISTICS AVAILABLE
Description IApplications
The 1N5711, 1 N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented "guard
ring" design to achieve a high breakdown voltage.
Packaged in a low cost glass package, they are well suited
for high level detecting, mixing, switching, gating, log or
A-D converting, video detecting, frequency discriminating,
sampling and wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
DIME1\I:SIOM IN
MllUMfTEAS
AND tlNCHf.SJ.
OUTLINE 15
Package Characteristics
Lead Material:
Lead Finish:
Maximum Soldering
Temperature:
Minimum Lead
Strength:
Typical Package
Inductance:
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2305, 2301, 2302, 2303, 2900 .... -60 C to +100 C
1 N5711, 1 N5712, 5082-2800/10/11,
HSCH-l00l .. _. . . . . . . . . . . . . . . . . . .. -65 C to +200 C
5082-2835 ......................... -60 C to +150 C
Operation of these devices within the above temperature ratings will assure a device Median Time To
Faifure (MTTF) of approximately 1 x 107 hours.
DC Power Dissipation (Measured in an infinite heat sink at
T CASE
Typical Package
Capacitance:
Outline 15
Dumet
lN5711, lN5712: Tin
2800 Series: Ti n
2300,2900 Series: Gold
Dumet
Tin
260'C
for 10 sec.
41b. Pull
10 lb. Pull
1.8 nH
0.25 pF
1N5711, 1N5712: 0.2 pF
2800 Series: 0.2 pF
2300,2900
Series: 0.07 pF
The leads on the Outline 15 package should
be restricted so that the
bend starts at least 1/16 inch
from the g lass body .
Also available in Tape and Reel. Please contact
local HP Sales Office for further information.
= 25 C)
OUTLINE 12
141
Package
Outline
Minimum
Breakdown
Voltage
VSR {V}
Maximum
Forward
Voltage
VF {mVI
VF",1V Max
at Forward
Current
IF {mAl
fR (nA)
2800
15
70
410
15
200
50
2.0
lN5711
15
10
410
15
200
50
2.0
2305
15
30
400
75
300
15
1.0
2301
15
30
400
50
300
15
1,0
2302
15
30
400
35
300
15
1.0
2303
15
20
400
35
500
15
1.0
1.2
Part
Number
5082
at
VR (VI
Maximum
Capacitance
Cr (pFI
2810
15
20
410
35
100
15
lN5712
15
20
550
35
150
16
1.2
2811
15
15
410
20
100
1.2
2900
15
10
400
20
100
1.2
2835
15
8'
340
lOt
100
1.0
HSCH1001
(lN62S31
12
60
410
15
200
50
2.2
IR '" 10pA
*'R " 100 pA
IF" 1 rnA
Test
Conditions
tVF
= .45V
VR =0 V
f = 1.0 MHz
Note:
Effective Carrier Lifetime IT) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA except for HSCH-1001
I1N6263), 1N5711, and 1N5712 which are measured at5 mAo
Matched
Pair
Unconnected
Matched
Quad
Unconnected
2301
50822306
AVF"'20mV
ACo '" 0.2 pF
2303
50822308
AVF '" 20 mV
AGo '" 0.2 pF
50822370
IlVF = 20 mV
IlCo '" 0.2 pF
2900
5082-2912
AVF = 30 mV
5082-2970
IlVF" 30 mV
2800
50822804
IlVF = 20 mV
50822805
LlVF" 20mV
2811
Matched
Ring Quad
Encapsulated
G10utline
Matched
Bridge Quad
Encapsulated
G2 Outline
Batch
Matched
Test Conditions
IlVF at IF =0.75,20 rnA
IlCo atf = 1.0 MHz
50822815
IlVF" 20 mV
IlCo = 0.20 pF
50822396
AVF '" 20 mV
IlCo '" 0.2 pF
50822814
IlVF; 20 mV
ACo" 0.20 pF
2835
142
50822356
IlVF = 20 mV
IlCo = 0.2 pF
IlVF at IF =0,75, 20 mA
IlCoat f" 1.0 MHz
5082-2997
IlV F " 30 mV
50822813
IlVF "20 mV
IlCo " 0.20 pF
5082-2836'
IlVF '" 20 mV
IlCo '" 0.1 pF
50822826
IlVF = 10 mV
IlCo " 0.1 pF
IlVF at IF ; 10 rnA
IlCo at f " 1.0 MHz
50822080
LlVF = 10 mV
IlCo = 0.1 pF
Outline G;!
Outline Gl
5.Q.8L20}
MAX
.. "'I
5.08 C201
8.13 (,321
MAX,
MAX.
~----:",3
Typical Parameters
1000
TEMPE.RATURE
COEFFICIENT
s
w
~
~
100
""
z
~
I
o
or
10~------~------~1~0------~'5
10
0.1
10
IF - FORWARD CURRENT (mAl
V BR (VI
50
<'
.s
I-
:0
"U
"u
"
":;>"
:;;
U
Z
I-
;t
a:
<'>
0.2
-"
1.2
V R - REVERSE VOLTAGE (V)
143
100
2.0
1.5
:i"
~
",
1.0
:t
I; 0.5
10
20
30
40
1.0
50
VR
25
1.2
30
IX
IX
G
w
U)
IX
IX
.iF
1.0
1.2
25
vR
Figure 10. I-V Curve Showing Typical. Temperature Variation for the
5082-2811 Schottky Diode:
30
.2
.4
.6
.8
1.0
1.4
1.2
iw
"~
!Zw
a:
IX
I-
1:1
w
il,
IX
I;
IX
-'"
1.0
.8
.6
.4
~
.~ """,,-5082'2al~8Jl.ll\15'12 _
5082"1i3$
.2
10
144
1.2
./
(
1
I-
(5
a:
a:
::J
"'a:"
~
a:
V>
!:
10~--~1~0----2~0----3~0----4~0--~5~0~~60
1.0
2. 5
1000
S
u
"'z
2. 0
""'z
"U
g;
""
"
l-
V>
1.
Bia:
I-
51'"
1. 0
liE
"z
r--
>
"I
0"
a:
10
20
30
40
10
50
10
100
145
FliD'l
HEWLETT
~~ PACKARD
SCHOTTKY BARRIER
DIODES FOR STRIPLlNE,
MICROSTRIP MIXERS
AND DETECTORS
5082-2200/01/02/03
5082-2207/08/09/10
5082-2765/66
5082-2774/75
5082-2785/86
5082-2794/95
Features
ANGLE
cur
30,50 0
ALTERNATe 0,13 (005/
DIA HolE 1,5 (0,06-)
FROM fND
SMALL SIZE
LOW NOISE FIGURE
6 dB Typical at 9 GHz
RUGGED DESIGN
HIGH UNIFORMITY
HIGH BURNOUT RATING
1 W RF Pulse Power Incident
0.10
W.Q04)
TY'
=~
OutllneC-2
C p '" 0.055 pF
Description IApplications
This family consists of medium barrier and low barrier
beam lead diodes mounted in easily handled carrier packages. Low barrier diodes provide optimum noise figure at
low local oscillator drive levels. Medium barrier diodes
provide a wider dynamic range for lower distortion mixer
designs. Application Note 976 presents impedance matching techniques for an X-Band mixer.
CATHOOE
Maximum Ratings
Operating and Storage Temperature Range
C-2 Packaged Diodes ............... -65 C to +125 C
H-2 Packaged Diodes ............... -65 C to +200 C
Outline H-2
Cp = 0.175 pF
Operation of these devices within the above temperature ratings will assure a device Median Time To
Failure (MTTF) of approximately 1 x 107 hours.
Pulse Power I ncident at TCASE = 25 C
Ill's pulse, Du = 0.001)
............ 1 W
Package Characteristics
HNCti~Sl.
146
RF Electrical Specifications at TA = 25 C
Part
Number
5082-
Batch
Matched
5082.
Barrier
Maximum
Nolte
Figure
NF (dB)
2200
2201
Medium
6.0
2202
2203
Medium
6.5
2,0:1
Hermetic
2765
2766
Low
6,0
1.5:1
H-2
2765
2186
Low
6,5
2.0:1
2207
2205
Medium
6.0
1.5:1
2209
2210
Medium
6.5
2.0:1
Broadband
2774
2775
Low
6.0
1.5:1
C-2
2794
2795
Low
6.5
Test
Conditions
..lNF:50,3 dB
Test Freq.
(GHz)
9,375
IF
Impedance
ZIF (1l)
Min.
Max.
Maximum
SWR
Package
Typical
Capacitance
CT (pF)
1,$:1
200
400
200
400
0.3
2.0:1
0.22
DC Load Resistance'" 0 II
L..O. Power'" 1 mW
IF'" 30 MHz. 1.5 dB NF
.lZIF:>25 !l
V"'O
Typlcal Value
Unlls
Teal Conditions
TSS
54
d8m
20Jl,A Bias
Voltage Sensitivity
'Y
e.e
mVIJI,W
Video Resistance
Rv
1400
Symbol
Typlcal Valul>
Unlls
TSS
44
d8m
Parameter
Tangential Sensitivity
Tangential Sensitivity
Te.t Condition.
Zero Bias
Voltage Sensitivity
l'
10
mVlJl,W
Video Resistance
Rv
1.8
Ma
=10 GHz
Typical Parameters
LOW BARRIER
MEDIUM BARRIER
100 ",,---,.._ _.,--_...,-_ _.,--_-,
10
t-
t-
iE
iE
a:
a:
u 1.0
a:
a:
a:
u
5:
5:
"
";::a:
"a:
"
";::
"a:
0.1
0.1
.!!"
.!!"
0.4
0.6
0.8
0.8
1.0
VF - FORWARD VOLTAGE (VI
147
148
149
7.5
7.0
iii
:s
'u:"
to
6.5
w
(;
Z
'"
1/
a:
CATHODE GROUNDED
"A"
~~~pp~o~~~~ ~
-.-L
I TL_~~:::::::J'
__
AIR
6.0
GROUND
4.1
10.161
PAC~AGE
(>2
1+2
5.5 ,
11
13
15
DiMENSION
'4A"
1.91 0.06
(0.075 0.0021
2HJ:t 0.05
[0.106.0.0021
FREQUENCY (GHzl
5082-2209,2794.
47.S!1:
0.775 (0,0;305)
EFF. = 6.37
46.00
0.320 (0.0126)
fEFf.
6.37
0.085 pF
Symbol
5082-2200, 5082-2766
50822200. 60822765
Units
Junction Resistance
RJ
258
545
Ohms
Junction Capacitance
CJ
0.255
0.302
pF
Parameter
67.0.11
0.318 (0.0125)
lEFF.
6.37
0.065 pF
DIMENSIONS IN MILLIMETERS (INCHES)
Parameter
Symbol
5082-2207, 5082-2774
50822207, 5082-2774
Units
Junction Resistance
RJ
338
421
Ohms
Junction Capacitance
CJ
0.189
0.195
pF
150
Fli;'
HEWLETT
~J:. PACKARD
Features
5082-2231
5082-2233
5082-2263
5082-2271172
5082-2277
5082-2279/80
5082-2291/92
5082-2294
5082-2830/31
18.
<0,1501
MIN.
SMALL SIZE
Eases Broad Band Designs
1~'D.OI81
Lm:6ffi
TIGHT MATCH
Improves Mixer Balance
OuWneC-4
Cp 0.06 pF 6"fIOnal
Cp ~ 0.01 pI' adj.",m
Description / Applications
~~~:~
1-----,.....L
O"!O~l
C"j
T
-L
T
Q.Oi ,0.-003)
O",line E-1
Cp = 6.07 pF diagonal
Cp = O.o!l pF a6j.oem
Maximum Ratings
Junction Operating and Stora\le Temperature Range:
H-4 Packaged Diodes .............. -65C to+150 oC
E-1 and C-4 Packaged Diodes ....... -65C to+125C
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 10 7 hours.
DC Power Dissipation .............. 75 mW per Junction
Derate linearly to zero at maximum rated temperatures
(measured in infinite heat sink at TCASE = 25 0 C)
Soldering Temperature ........... H-4 260 C for 10 sec.
C-4 235 0 C for 10 sec.
E-1 220 C for 10 sec.
These diodes are ESD sensitive. Handle with care to avoid
static discharge through the diode.
Outli""H-4
Cp = 0,16 pF diagonal
Cp 0.20 pF adjacent
OtMIENSION$. IN MlUIMETERS AND (INCHest.
151
Selection Guide
~
Package'
Barrier
To 20Hz
240Hz
4-8 GHz
812 GHz
50822271
50822277
50822263
1218 GHz
Outline
E'
Medium
5082-2830
low Cost
Low
50822831
H4
Medium
6082-2263
6082-2263
Hermetic
Low
50822231
50822231
5082-2233
C4
Medium
5082-2291
50822291
5082-2292
6082-2294
5082-2294
Broadband
Low
50822271
60822271
60822272
50822279
50822280
Typical
Parameters
5082-
Package
Barrier
Maximum
Maximum
Maximum CapaCitance
CT (pF)
Capacitance
VF
Difference Difference
,;"VF <mY)
Diagonal
Adjacent
":"Cr (pF)
Maximum
Dynamic
Resistance
Ro (n)
Forward
Voltage
VF (V)
0.60
0.80
0.10
12
0.25
0.40
0.54
0.05
16
0.30
OAO
0.54
0.05
16
0,45
0.5 Typ.
0.67Typ.
0.20
12
OAO
Low
0.5 Typ.
0.67 Typ.
0.20
12
0.25
Medium
0.50
0.67
0.10
15
0.35
2271
0.60
0.80
0.10
2272
OAO
0.54
0.10
0.25
0.34
0.20
0.27
0.60
2231
2233
H-4
2263
Medium
2830
2831
El
2277
Low
2279
2280
2291
2292
2294
Low
C-4
Medium
12
0.25
15
0.25
0.05
16
0.30
0.05
16
0.30
0.80
0.10
12
0.35
0040
0.54
0,10
15
0.35
0.20
027
0.05
16
0,45
Test
Conditions
20
Ip=5 rnA
between Adjacent Leads
VR=O
f= 1 MHz
package Characteristics
RD
Rj
= Rs + Ri
= 26/18
where
152
Example:
C1 x C2 C3 X C4
CDIAGONAL = - - - + - - C1+C2 C3+C4
Assuming C1 = C2 = C3 = C4 = 1.0 pF
CDIAGONAL = 1/2 + 1/2 = 1.0 pF
1
1
OA
OB
C52+C;+B4
Assuming C1 = C2 = C3 = C4 = 1.0 pF
CADJACENT = 1 + 1/3 = 1 .333 pF
Figure 1.
1
!zw
a:
a:
""a:
Q
i5?
O~--~O~.2=O--~O~.4~O---O~.6~O~~O~.8~O---1~.OO
O~--~O~.2=O--~O~.~~--O~.6~O--~O~.~~--~1.00
153
Fli;-
HEWLETT
a:~ PACKARD
5082-2273/74
5082-2295-98
5082-2350/51
5082-2400/01
5082 -2520121165/66
5082-27011021 06 /07
5082-2711-14/23-24
5082-2817118
SCHOTTKY
BARRIER DIODES
FOR MIXERS
AND DETECTORS
Features
LOW NOISE FIGURE
~~ll
m~
HIGH UNIFORMITY
BOTH MEDIUM AND LOW BARRIER
DIODES AVAILABLE
~-=c
rl-tMIN,
W~
~UW
3.81 (.f50)
Description / Applications
--t
,ul,...
Outlinll49
M'r
U_l._
Outline1S
Maximum Ratings
OtMeN$loNS IN
lVIU,JMETER$ANO (lNCHU),
Outline 44
Package Characteristics
Note: The 5082-2200, -2500 and -2700 series are ESD sensitive.
Handle with care to avoid static discharge through the diode.
154
Typical
Parameters
Electrical Specifications
at TA=25C
LO
P1Irt
Test
Frequencv
Maximum
SSB Noise
Figure
NF(dB)
I F Impedance
Junction
Capacitance
CJO (pI'l
Braekdown
Voltage
VSR(V)
1.6:1
1.0
15
1.3:1
0.7
30
0.9
30
1.5:1
0.7
250
1.5:1
0.7
200
400
1.5:1
200
400
2.0:1
6.0
200
400
1.5:1
6.5
200
400
1.5:1
6.0
100
250
1.5:'
2.0:1
Number
5082-
Matched
Pair 5082-
2817
2818
Madlum
2.0
6.0
250
400
2400
2401
Medium
2.0
6.0
150
250
2360
2351
Medium
2.0
7.0
150
250
1.5:1
2565
2566
Medium
3.0
a.o
100
250
2520
2521
Medium
3.0
7.0
100
2713
2714
Medium
9.375
6.0
2711
2712
Medium
9.375
6.5
2701
2706
Medium
9.375
2702
2707
Medium
9.375
2295
2295
Low
9.375
Barrier
IGHzl
M.Kknum Package
Outline
SWR
ZIFIOl
Ma ...
Min.
15
49
4
"
2297
2298
Low
9.375
6.5
100
250
2723
2724
Medium
16
6.5
200
400
1,5:1
49
2273
2274
Medium
16
6.5
200
400
1.5:1
44
Test
Condi
ANF"'0.3d6
AZIF",250
tions
44
LO Power ~ 1 mW
IF=30 MHz, 1.5 d8 NF
Zero DC Load Resistance
(lOOn for 5082-2817)
Ssm. as for NF
except
IF = 10 KHz
Ssmeas
for NF
0.10
3
3
V=O
IR = 10 J.<A
Typical Parameters
18
I001-1-;;;~;=~'~;3~~~
;{
16
14
10
oS
IZ
a:
a:
::>
'-'
a:
<t
;:
a:
it
12
10
a:
w
en
.1
0
Z
0
0
.01
-2
1.0
FORWARD DC VOLTAGE (V)
FREQUENCY (kHzl
155
iii
:!!
.""''"
w
CI)
oz
IF' 30Mfiz
I--+--+-+~-
F'F ".5 dB
PtO
-1#
1.0 mW
RL = 100 n
5L-~~~~~~~~L-~~~~
0.1
FREOUENCY (GHzl
10
100
8.0 r---r-------,------;;-----,-----,
7.0 r----r___---j-
-~.-r___--__!"7'S__1
.""''"
CI)
oz
156
12
280
HI
11
I''\.
10
."\. ."'-
iii
:s
:\.,."' .....
a:
::l
..........
to
u:
3GItr;
'-
260
2G~
220
LL
Sw
200
240
--...-/ / /
. /lClHz
"
160
140
~
!!:
120
"~
"'0
z
180
\:
\
\
100
80
\.
\.
"- ......
60
40
20
0.1
'''''1.0
'"'10
0.1
100
1.0
""10
,"100
Figure 10. Typical HP 5082-2300 and 2400 Series IF Impedance vs. Local Oscillator Power with flO = 2.0 GHz and IF =
30 MHz. (The Mount is tuned for Minimum Noise Figure at each LO
Levell.
157
1200
1000
iii
BOO
"<t
a;
z
Q
u::"
600
to
400
'"0z
!!::
200
-8
LOCAL OSCILLATOR POWER
IdBml
Figure 18. Typical Noise Figure and IF Impedance for 50822711 vs. Local Oscillator Power. Note the improved
performance at low levels of LO power when dc bias is
superimposed Idashed curves!. (The Mount is tuned for
Minimum Noise Figure at each LO Levell.
158
159
.'-~-.-~~~~-
9.0
.1
1600
..
1200
800
C.l
f 9.37$ Ulit
liP PAOKAGE OUTLINE 44
e-\\
.
0
'\
400
-12
8.0
iii
16
-8
12
i'...
NF
iii
:!!
w
:!!
w
::>
::>
Cl
Cl
a:
u:
t.-
a:
u:
.,w
az
7.0
az
6.0
.,w
:/
r"-
121r
-4
(
12
10
12
14
16
18
FREOUENCY IGHz)
.30
500
t 9.37~ Glit
I
.25
400
-w
..
C.l
iii
..
~
.
:!!
w
300
::>
I-
Cl
u:
.,
w
200
az
C.l
J:
C.l
100
0
-12
.20
C.l
a:
~
~
"0-
.15
.10
XBAND DEVICES
KU'r ND DfVIOES!
.05
-8
-4
12
0.5
1.0
1.5
2.0
2.5
3.0
Figure 26. Typical Noise Figure and IF Impedance vs. Local Oscillator Power. Diode tuned at each local oscillator power level
15082-22951.
160
rli~ HEWLETT
a!~ PACKARD
Features
HIGH VOLTAGE SENSITIVITY
NO BIAS REQUIRED
CHOICE OF HIGH OR LOW VIDEO IMPEDANCE
Description/Applications
The high zero bias voltage sensitivity of these Schottky
Barrier diodes makes them ideally suitabie for narrow
bandwidth video detectors, ECM receivers, and measurement equipment. These diodes also make excellent mixers
for use with low power LO.
Maximum Ratings
Operating and Storage
Temperature Range ................. -65 C to +150 C
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
Outline 49
Outline 15
CW Power Dissipation at TA = 25 C
HSCH-3206, -3207 .......................... 200 mW
HSCH-3486 ....... . . . . . . . . . . . . . . . . . . . . . . . .. 300 mW
Derate Linearly to 0 W at 150 C
Pulse Power Dissipation at T A = 25 C.
Peak power incident.
1 1'5 pulse, Du = 0.001 .......................... 1 W
Outline 44
DIMEnSIONS IN
Mlt.ll~ETeRS AND
{lNCHESI.
package Characteristics
The HP Outline 15 package has a glass hermetic seal with
gold plated Dumet leads which should be restricted 50 that the
bend starts at least 1/16" (1.6 mm) from the glass body. With
this restriction, it will meet MIL-STD-750, Method 2036,
161
Package
Outline
Maximum
Tangential
Sensitivity
TSS (dSm)
HSCH-3207
44
-42
80
300
0,30
HSCH-3206
49
-42
10
100
300
0.30
HSCH-3486
15
-54
7.5
Pari
Number
Video
Bandwidth
=2MHz
Ites! = 10 GH;z:
Test Conditions
Note:
For HSCH-3207. -3206. IR
= 10 MA Imax) at VR =
3 V at TA
Minimum
Voltage
Sensitivity
')' (mVlI'W)
= 25 C,
Typical
Total Capacitance
Cr (pF)
0,30
VR "'OV
f = 1 MHz
Typical Characteristics
10
I-
I-
iii
,1
::>
a:
a:
0
w
::>
"!::i'"
""a:
,01
>
a:
f2
.001
50
,;
40
>I-
I-
iiia:
;;
::>
0;
a:
i=
"
lii
a:
30
~w
'""~
i;;
a:
20
>
FREQUENCY (GHz)
162
('
60
E
0>
~
....>:;
58
i=
iii
ilico
.......
I I -
HSCH,3486
i'.
RL -lMEGOHM
"'-
56
-'
"z
"iii
i=
"ili
"....
54
-'
52
"
--
r-
HSCH3206
HSCH3Z07
"'-
j-.....
........
50
10
FREQUENCY (GH,I
50
45
3:
40
>
35
--"!c
..s
....>:;
30
i=
iii
25
co
w
ili
20
""':;
0
>
10
-75
VS.
1-"
1"'---1'.
----
~H' '\
Rl = 1 MEGOHM
-25
"
\
FREQUENCY 10
55
I.......
25
~
z
o
-'
:::l
Cl
:;
....~
~
~
o
a:
Cl
a:
....J:
u-
n
z
o
i=
"~
a:
163
i=
iii
125
Bias Current.
E
~
....>:;
-'
"ili
i=
"I'. N
75
50
45
TEMPERATURE rCI
- -.....
15
/'
60
40
35
175
"z
"....
164
FliflW
5082 -2750/51
5082-2755
5082-2787
5082-2824
SCHOTTKY
BARRIER DIODES
FOR DETECTORS
HEWLETT
~e..II PACKARD
Features
- ~i:Slr-
CATH01YE END
INDICA-rED BY
COlORDOT\
,.a~
m.
-L
,\r
--r
~~
li
:,33-UlOl
. ITI\ii
II
CA.jHOOE
Description / Applications
The low 1 If noise and high voltage sensitivity make these
Schottky barrier diodes ideally suitable for narrow
bandwidth video detectors, and Doppler mixers as required in
Doppler radar equipment, ECM receivers, and measurement
equipment.
Outline 15
Maximum Ratings
p-tMfN$tONS tN
MU.. lIMElEAS ANt:;) UNCH!:'St
package Characteristics
The HP Outline 15 package has a glass hermetic seal with
plated Dumet leads which should be restricted so that the
bend starts at least 1 .16" (1.6 mm) from the glass body. With
this restriction, it will meet MIL-STD-750, Method 2036,
Conditions A and E (4 lb. [1 .8 kg] tension for 30 minutes). The
maximum soldering temperature is 230C for 5 seconds.
Marking is by digital coding with a cathode band.
Outline 44
4.5 W
2.0 W
V SR
Note: The 2700 series diodes are ESD sensitive. Handle with
care to avoid static discharge through the diode.
165
5082.
Outline
y(mV/I'W)
-56
6.0
-52
3.5
2824
2787'
2755
2751
2750
Voltage
M.ximum
Tangential
SaneltMty
TSS (dBm)
15
Sensitivltv
Minimum
55
49
Typical Parameters
Video
Resistance
Rv(kfi)
Min. M.".
Minimum
Breakdown
Voltage
VSR(Vl
1.5
1.2
Junction
Capacitance
CJO(pF)
15
2 8t20 kHz
8at 1 kHz
6.0 at 20 kHz
15.0at 1 kHz
.1
Rv=50fi
V=O
1.0
.12
1.6
Noise
Temperature
Ratio atf
(dB)
44
Test
Condrtlons
=
=
IR "'10I'A
tanoo : l00kn
30
iii
:!1.
Q
..
..
20
I-
a:
w
a:
:>
I-
a:
w
I-
'"isz
6082-2824
I
-10
10'
10 3
10'
10'
FREQUENCY (Hz)
60
E
<II
TEST CONDITIONS
sw,., 2 MHz
56
>
DC BIAS = 20 "A
RA =-500H
Rl '" 10.0 K~l
-i -_.__.__.'
I-
;;
i=
iii
54
:'i
..'"
..
:'i
..
-'
ri
52
to
iii
-'
56 .
1-----
50
i=
to
f : 2 GHl; 50822824
f = 10 GHz; 50822750 SERIES
BW", 2 MHz
48
I-
52L-~--------~~------~~---'
10
3
12
14
4
16
18
46
20 5082-2750/51/55
50822824
.-. --
10
100
DC BIAS CURRENT ("A)
SIGNAL FREOUENCYIGH,)
166
500
(
:i
EIZ
W
0::
0::
:::>
"g
"
0::
i...
"
167
168
169
HIGH RELIABILITY
SCHOTTKY CHIP FOR
MEDICAL APPLICATIONS
r/~ HEWLETT
~~ PACKARD
HSCH-llll
(Generic 5082-0024)
Features
JAN-TXV EQUIVALENT
HIGH BREAKDOWN VOLTAGE
PICO-SECOND SWITCHING SPEED
LOW TURN-ON
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
L -. 0.38----.J
1-"
(5)-1
ALL DIMENSIONS IN
mrt! AND (111000 inchl
Program Description
Medical life support equipment requires highly reliable
components. To meet that requirement, Hewlett-Packard's
policy is to supply only components which have been tested
in the equivalent of a JAN-TXV program.
The components and documentation supplied conform to
the present requirements imposed by the Food and Drug
Administration regulations concerning medical devices. It
will be standard practice for all orders of life support application components to: (1) be shipped with a statement
confirming release to ship by the Product Assurance
Department, (2) be provided with traceability of the testing
done, and (3) be packaged so they can go into customer
stock with minimum handling.
Oulllne Drawing
Maximum Ratings
Operating and Storage Temperature
Range ............................. -65 C to 200 C
When assembled in hermetic packages, operation of these devices within the recommended
temperature limits will assure a device Mean
Time to Failure (MTTF) of approximately 1 x 107
hours.
Reverse Voltage IWorkingl ................ 50 V Ipeak)
Min.
Max.
Units
Breakdown Voltage
VeR
70
IR'" 10 I'A
Forward Voltage
W,
.41
IFI = 1 mA
Forward Voltage
VF2
1.0
IF2= 15 mA
IR
50
nA
VR =50 V
1.7
pF
VR =
Specification
CJIO)
170
Test Condition
a V and f = 1 MHz
\,
Inepectlon
MIL-$TD-750
fftthod
Condl1lons
Per Table I.
2073
2. Visual In,pectlon
MIWTD-750 Method
(elt~ as noted)
Teat/lnepectlon
Condition A.
n=11.r"1
n;11.r=1
MII.-STO-B83
Method 2019
1051
20
20
LTPD
Condillone
MII.-STD-88S
Method 2011, Condo 0
1. Bond Strength
?006
20 KG atYl
Per Table I
1032
1038
10
10
Per Table I
Per Table I
.;\VFS41 mVat1 mA
,;\VBR S 5 Vat 10 p.A
.J.IR S; 50 nA al 50 V
Typical Parameters
:_-l_4-_t--1'50
126
-L._-I--l--:--1'OO
1000
r-i:::::.i:::=I=--t-'T751---j
'"w
~
~
I
!:
Tp.('Cl
40
VF - FORWARD VOLTAGE (VOLTS)
171
50
Flin-
HIGH RELIABILITY
BEAM LEAD SCHOTTKY
DIODES FOR MIXERS
AND DETECTORS
HEWLETT
~~ PACKARD
TXVW-5300
SERIES
Features
PLATINUM TRI-METAL SYSTEM
Higher Temperature
NITRIDE PASSIVATION
Stable, Reliable Performance
LOW NOISE FIGURE
6 dB Typical at 9 GHz
HIGH UNIFORMITY
Tightly Controlled Process Insures Uniform RF
Characteristics
RUGGED CONSTRUCTION
4 Grams Minimum Lead Pull
lii.$)
SILICON
7101l!j1
8rJf
I I
Description/Applications
I~
GLASS
670 (26)
f:9.+111
40 l1~
Oulllne07
Barrier
5318
5314
IF
Impedance
ztF (n)
Max.
Min.
Maximum
SWR
Minimum
Breakdown
Voltage
VaR (V)
6.2al
Medium
5,138
5334
Maximum
Noise
Figure
NF(dB)
9.375 GHz
7.2 at
16GHz
200
400
1.5.1
200
400
1.5.1
6.2 at
Low
9.375 GHz
7.2 al
Maximum
Dynamlc
R_lstance
RD(!l)
Maximum
Total
capacitance
12
(CT(PF)
0.25
18
0.15
12
0.25
18
0.15
Maximum
Leakage
Current
IR(nA)
Voltage
VF(mv)
500
450
500
300
VR = tV
IF= 1 mA
Typical
Forward
16GHz
Teal
Conditions
DC Load Realslance = 0 n
IR=10;<A
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
IF =5 mA
VR=OV
1=1 MHz
172
Barrier
Minimum
Breakdown
VOltage
VIR (V)
Medium
Part
Number
HSCH-
5316
5312
5310
5336
5332
Law
5330
Test
IR~10I'A
Maximum
Dynamic
Reelstance
AD(n)
Maximum
Tola!
Capacitance
c,. (pF)
12
0.25
18
0.15
25
0.10
12
0.25
18
0.15
25
0.10
Typical
Forward
Voltage
VF(mV)
450
300
VR=OV
IF=5mA
IF"'l mA
1=1 MHz
Conditions
Beam Leadl' ]
Inspection Levitt
HSCH-53XX
Commercial
TXVW-53XX
TABLE III.
100% INSPECTION PROGRAM FOR HSCH-5300 SERIES BEAM LEADS (OUTLINE 07)
SCreening Teal/Inspection
MtL-STD-750
Method
Conditioll$
Per Table I
HP A5956-0112-72111
3. Visual Inspection
24 hours at 300 C
.'
TABLE IV. LOT ACCEPTANCE TEST FOR HSCH-5300 SERIES BEAM LEADS (OUTLINE 07)
Tesl/lnspection
MIL-STD-750 Method
(except as not&d)
Conditions
MIL-STD-883
Method 2011 Condo H
CondltionH
(4 grams minJ, n = 11, r= 1
1051
4. T em perature Cycle
173
F - 10 cycles 15 min.
at extremes -65 to 200 C
Read and (!lCord
1038
VR= 1.0V dC
TA = 150" C. t'" 240 hours
1038
20
Per Table I
1032
LTPD
10
Per Table I
10= 10mAOC
TA = 125C. t'" 340 hours
Per Table I
.1Cr =0.05 pF
.1VF =10%
10
Flio-
HIGH RELIABILITY
BEAM LEAD SCHOTTKY
DIODE PAIRS FOR MIXERS
AND DETECTORS
HEWLETT
~I!II PACKARD
TXVW-
5500
SERIES
Features
MONOLITHIC PAIR
Closely Matched Electrical Parameters
LOW CAPACITANCE
0.10 pF Max. at 0 Volts
I-------~~~l------"'i
Description/Applications
r"
~
12
/GOlOBEAM
If (.3)
\;~
"PLATINUM
METALLIZATION
GLASS
'9
=r
70 (3t
<Off!
Outline 04
5510
5530
Maximum
Noise
Figure
Barrier
NF(dB)
IF
Impedance
ZIF (ll)
Min.
Max.
Minimum
Maximum
Dynamic
Maximum
SWR
Breakdown
Voltage
VSR (V)
Resistance
1.5:1
4V
20
Maximum
Max.
Tolal
-"RD Capacilance
(n)
CT (pF)
Ro(O)
Max.
':'CT
(pF)
Medium
Low
Maximum
Forward
Voltage
VF (mV)
500
7.0@
16 GHz
400
200
Test
Conditions
IR < 10 pA
IF
0.10
VR
SmA
1~1
0.02
375
~OV
IF
MHz
Barrier
5511
Medium
5531
Low
Test
Conditions
Max.
':'V F
(mV)
Minimum
Breakdown
Voltage
VBR (V)
Maximum
Dynamic
Resistance
Rp (ll)
4V
20
IR
10
~A
IF
-"Rp
(0)
Maximum
Total
Capacllance
CT (pF)
Max.
-"CT
(pF)
0.10
0.02
Max.
5 mA
174
Maximum
Forward
Voltage
VF (mV)
500
Max.
-"VF
(mV)
10
375
VR
f~
OV
1 MHz
IF -1 mA
10
1 mA
Inspection Level
HSCH-55XX
Commercial
TXVW-55XX
TABLE III. 100% INSPECTION PROGRAM FOR HSCH-5500 SERIES BEAM LEADS (OUTLINE 04)
MIL-STO750
Method
Screening Test/Inspection
Conditions
24 hours at 3000 C
Per Table I
HP A5956-0112-72!"
3. Visual Inspection
Notes
1 Specification available upon request.
TABLE IV. LOT ACCEPTANCE TEST FOR HSCH-5500 SERIES BEAM LEADS (OUTLINE 04)
MIL-STO750 Method
(except as noted)
Conditions
MIL-STD-883
Method 2011 Cond H
Test/Inspection
4. Temperature Cycle
1051
LTPD
Per Table I
F - 10 cycles 15 min.
at extremes -65" to 200 0 C
Per Table I
1032
1038
VR = 1.0V de
T A = 1500 C, t = 240 hours
1038
10
Per Table I
10= 10 mA DC
TA 125 0 C, t ~ 340 hours
Per Table I
:. Cr = 0.05 pF
'" VF= 10%
175
20
10
Flin-
HIGH RELIABILITY
SCHOTTKY BARRIER DIODES
FOR MIXERS
AND DETECTORS
HEWLETT
~~ PACKARD
HSCH-0813
HSCH-0814
HSCH-0815
HSCH-0816
Features
LOW 1/F NOISE
LOW AND STABLE NOISE FIGURE
HIGH UNIFORMITY
HIGH BREAKDOWN VOLTAGE: 30 VOLTS
MATCHED CHARACTERISTICS AVAILABLE
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
Description
The HSCH-0813, -0814, -0815, -0816 devices are unpassivated Schottky diodes in a glass package. These diodes
have extremely low 1If noise and are ideal for low noise
mixing, and high sensitivity detecting. They are particularly
well suited for use in Doppler or narrow band video
receivers.
Maximum Ratings
Junction Operating and Storage
Temperature Range ........ , .... , ... -60C to +100C
Operation of these devices within the above temperature ratings will assure a device Mean Time To Failure
(MTTF) of approximately 1 x 107 hours.
Power Dissipation at TeASE = 25 C ...........
Derate linearly at 1.33 mW;o C to zero at 100 C
Outline 15
100 mW
Ma'ch~d
LO
Number
HSCH-
HSCH
Barrl~r
Frequency
(GHz)
Maximum
SS8 Noise
Figure
NF (d8)
0814
0813
Medium
2.0
6.0
Test
Conditions
.lNF:O:O.3 dB
AZIF $251l
Test
Pair
IF Impedance
ZIF (n)
Min.
Max.
150
LO Power = 1 mW
IF = 30 MHz, 1.5 dB NF
Zero DC Load Resistance
350
Same as for NF
except
IF=10KHz
Maximum
Maximum
SWR
Capacltane~
CT(pF)
Minimum
8reakdown
Voltage
Vall (V)
1.3:1
1.0
30
Same as
forNF
VR""OV
t= 1.0 MHz
IA = 10 pA
Matched
Number
HSCH
Pal,'
HSCH.
0816
0815
Test
Conditions
AVF$10mV
AC050.2 pF
Minimum
Breakdown
Voltage
Vall (V)
30
III
10/LA
Maximum
Forward
Voltage
Vp(mV}
VF= 1V Max.
at Forward
Current
'F (mA)
400
50
IF=l rnA
Maximum
Revel'$e Leakage
Current
at
VR{V)
'R(nA)
300
15
Maximum
Capacitance
CT (pF)
1.0
VR""OV
f=I.0MHz
176
{/
MIL-STD-750 Method
1032
Conditions/Comments
Per H,P. Method A-5956-0562-72
t= 48 hours., TA
=100C
1051
4. Constant Acceleration
2006
1071
Condition H,
Condition E.
5. Hermeticity Tests
Fine Leak
Gross Leak
Per Table I. TA
7. Burn-In
=25C.
PDA=10%111
GROUP A INSPECTION
Screening Test/Inspection
MILSTD-750
Method
ConditionS/Comments
LTPD
Subgroup 1
2071
Subgroup 2
Electrical Test (Orl
Per Table I.
Subgroup 3
D,C. and RF Parameters at 25C
10
Satisfied by 100%
measurements at post
burn-in.
GROUP B INSPECTION
Test/lnspeoUon
MIL-STD750
Method
Conditions/Comments
LTPD
Subgroup 1
Moisture Resistance
End Points NeR, IR, VF)
1021
10
Subgroup 2
High Temperature Non Operating Life
End Points NSR, IR, VFl
1031
10
Subgroup 3
Operating LIfe
End Points (VBI'!, IR, VFJ
1038
10
177
F/i'PW
HEWLETT
~~ PACKARO
Features
HIGH BREAKDOWN VOLTAGE
PICa-SECOND SWITCHING SPEED
LOW TURN-ON
Description / Applications
The JAN Series 1 N5711 is an epitaxial, planar passivated
Schottky Barrier Diode designed to have pico-second
switching speed. These devices are well suited for high
level detecting, mixing, switching, gating and converting,
video detecting, frequency discriminating, sampling, and
wave shaping applications that require the high reliability
of a JAN/JANTX device.
OUlline 15
Symbol
Min.
Breakdown Voltage
VSR
70
IR
Forward Voltage
~1
.41
1Ft : lmA
Forward Voltage
VF2
'R
IR
Specification
Capacitance
C Tlo )
178
Units
Test Conditions
= 10pA
1.0
200
nA
VR
200
{.lA
VR =50V, TA =+150"C
2.0
pF
VR
100
;>5
IF = 5 mA Krakauer MethOd
INote II
IF2 = 15mA
= SOV
=OV and f ,. 1 MHz
JAN 1 N5711: Samples of each lot are subjected to Group A inspection for parameters listed in Table I. and to Group B and Group
C tests listed below. All tests are to the conditions and limits specified by MIL-S-19500/444.
JANTX lN5711: Devices undergo 100% screening tests as listed below to the conditions and limits specified by MIL-S-19500/
444***. A sample of the JANTX lot is then subjected to Group A, Group S, and Group C tests as for the JAN 1 N5711 above.
JANTXV lN5711:
to TX screening.
Devices are subject to 100% visual inspection in accordance with M1L-S-19500/444 prior to being subjected
Screening TesVlnspection
Conditions/Comments
48 hours, TA ~ 200 C
1032
1051
Condition F, 10 Cycles
2006
20 KG. Yl axis.
4.Hermeticity Tests
1071
Condition H.
Condition E
Fine Leak
Gross Leak
See Table I
1038
6. Burn-In
7.Final Electrical Tests and Drift Evaluation
10% PDA
ilR, VBR)
L--.-.
Test/Inspection
Subgroup 1
Visual and Mechanical
LTPD
2071
Subgroup 2
Electncal Tests at 25 C
Conditions/Comments
5
VSR, VF1. VF2, IR1, Cra and
per Table I.
Subgroup 3
High Temperature Operation ITA = 1500 C)
Reverse Currrent ilR2!
5
Per Table I
--'--.
MIL-STD-750
Method
Conditions/Comments
--
15
2066
2026
1051
1056
2036
1071
1021
4021
4011
4011
179
LTPD
Per Table I
Per Table I
Per Table I
10
Test/Inspection
Subgroup 3
Shock
2016
2056
2006
Conditions/Comments
Non-operating; 1500 G;
t'" 0.5 ms. 5 blows in each
LTPD
10
Y1. Y2
End Points: (same
as Subgroup 2)
Subgroup 4
Terminal Strength; Lead Fatigue
2036
1031
TA=200'C.111
4021
63 V min. at 10 pA
1.05 V max. at 15 rnA
300 nA max. at 50 V
10
SubgroupS
High Temperature Life (Non-Operating)
End Points:
Breakdown Voltage (VaR)
ForWard Voltage (VFI
Reverse Current (tAl
4011
4016
'\=3
Subgroup 6
Steady State Operating Life
End Points: (same as Subgroup 5)
1026
10 = 33 mA lavgJ; VR = 50 V
(peak) f = 60 Hz.
TA = 25'C,1 11
,\=3
Conditions/Comments
LTPD
1. t = 1000 hours every 6 months to qualify product. t = 340 hours on eacn lot tnerealter.
MIL-STD-750
Method
Subgroup 1
Salt Atmosphere (Corrosion)
Subgroup 2
Resistance to Solvents
Subgroup 3
Thermal Shock (Temperature CYCling)
End Points:
Breakdown Voltage (VaR)
Forward Voltage (VF21
Reverse Current OR1 I
1041
20
MIL-STO-202
Methoo 215
10
1061
4021
4011
Per Table 1
Per Table I
Per Table I
4016
Subgroup 4
Low Temperature Operation (-65 0 CJ
Forward Voltage (VF1)
Forward Voltage (Vf21
Breakdown Voltage (VBR)
10
20
0.55 Vat 1 mA
1.0 V all 5 mA
70V at 10pA
180
Typical Parameters
;{
!ii
IZ
w
a:
a:
:>
u
a:
;:
a:
'a"
150'0
100'0
5O'e
25'0
0'0
iiia:
u
lii
:il>
..sollie
u.
I
J!-
a:
1,0
1,2
__4---r--1--1100
75
181
F/iOW
HEWLETT
~~ PACKARD
Features
PICO-SECOND SWITCHING SPEED
<l,.41 1.0161 _ _ _1
0.361.0141
1-+__
o~-:rOOI
t::l
1.931.0761
1.73 f.Os8j
Description/Applications
The JAN Series 1 N5712 is an epitaxial, planar passivated
Schottky Barrier Diode designed to have pica-second
switching speed. These devices are well suited lor
VHF/UHF mixing and detecting, A/D converting, and
switching applications that require the high reliability 01 a
JAN/JANTX device.
Maximum Ratings
Operating and Storage Temperature
Range ............................... -65 C to 200 C
Operation of these devices within the
recommended temperature limits will assure
a device Mean Time To Failure (MTTF) of
approximately 1 x 107 hours.
Outlioe 15
Min.
Breakdown Voltage
VSR
20
Forward Voltage
VF1
0.55
\Ide
IF1
Forward Voltage
VF2
1.0
Vde
IF2 = 35 mA de
IRt
150
nA dc
VR
IR2
150
fJAde
VR
CT(o)
1.2
pF
VR =
100
pS
IF
Specification
Capacitance
Effective Minority Carrier Lifetime
Notes:
1. Per DESC drawing C-68001.
182
Max.
Units
Vdc
Test Conditions
IR
10 fJA de
= 1 mAde
= 16 V dc
= 16 V dc, TA =
150 a C
a V and 1= 1 MHz
=5 mA Krakauer Methodl 11
JAN 1 N5712: Samples of each lot are subjected to Group A inspection for parameters listed in Table I, and to Group Band
Group C tests listed below. All tests are to the conditions and limits specified by MIL-S-19500/445.
JANTX 1 N5712: Devices undergo 100% screening tests as listed below to the conditions and limits specified by MIL-S19500/445* . A sample of the JANTX lot IS then subjected to Group A, Group B, and Group C tests as for the JAN 1 N5712 above.
JANTXV 1N5712: Devices are subject to 100% visual inspection in accordance with MIL-S-19500/445 prior to being subjected
to TX screening.
* JANTX and JANTXV devices have gold plated leads.
MIL-STD-750 Method
Conditions/Comments
1032
t = 48 hours, TA = 200C
1051
Condition C, 10 Cycles
2006
20 KG, Y1 axis.
4. Hermeticity Tests
1071
Condition G or H.
Condition E
Fine Leak
Gross Leak
See Table I
6.Burn-ln
1038
,--
MIL-STO-7S0
Method
Teslll nspeclion
Subgroup 1
Visual and Mechanical
-----
Subgrouj> 2
DC Electncal Tests at 25 C
Subgroup 3
High Temperature Operation ITA
Reverse Currrent IIR2)
Conditions/Comments
---
2071
~
LTPO
per Table I.
150C)
4016
Test/Inspection
MIL-S';'O-7S0
Method
Subgroup 1
Physical Dim8nslons
2066
Subgroup 2
Solderability
2026
Conditions/Comments
15
1051
1056
2036
Hermetic Seal
Moisture Resistance
End Points:
Breakdown Voltage IVSR)
Forward Voltage IVF2)
Reverse Current IIR11
1071
1021
4021
4011
4011
Per Table I
Per Table I
Per Table I
183
LTPD
10
MIL-STD-750
Method
Conditions/Comments
LTPD
Subgroup 3
Non-operating; 1500 G;
t '" 0.5 ms, 5 blows in each
orientation Xl, Yl, Y2
Non-operating
Non-operating; 20 KG; Xl,
Yl, Y2
10
2036
10
1031
TA=200'C,J11
4021
4011
4016
18 V min. at 10 }AA
1.05 V max. at 35 mA
200 nA max. al16 V
1026
10 = 33 mA; VR = 50 V
(peak) f = 60 Hz.
TA '" 25' C,lll
Shock
2016
2056
2006
Subgroup 4
Terminal Strength; Lead Fatigue
SubgroupS
High Temperature life (Non-Operating)
End Points;
Breakdown Voltage (VBR)
Forward Voltage (VF2)
Reverse Current OR1}
Subgroup 6
Steady State Operating Life
End Points; (same as Subgroup 5l
A=3
A=3
1. t = 1000 hours every 6 months to qualify product, t = 340 hours on each lot thereafter.
End Points:
Breakdown Voltage IVSR)
Forward Voltage <VF2)
Reverse Current (tRl)
Subgroup 4
Low Temperature Operation (-65'C)
Forward Voltage IVF1)
Forward Voltage IVF2)
Breakdown Voltage IVSR)
MIL-STD150
Method
Conditions/Comments
LTPD
1041
20
MIL-STD-202
Melhod 215
10
1051
4021
4011
4016
Per Table I
Per Table I
Per Table I
4011
4011
4021
Per Table I
Per Table I
Per Table I
10
20
184
( \ Typical Parameters
g
w
z
I;;
'"
~ 1.0 i=---'f----Jr---I----+---=i
o
iii~100~--~~----4------------F--~
z
>
o
~.10~----f_-f_4----_4----_+----d
~c
.01 '--....,0:-'::.2:-L-........,0::l.4:---:-'0.6:--:"0.:"S_-.J1.0
v, -
10
IF - FORWARD CURRENT (rnA)
(
~~5-L_-:2~5-0~2~5~5~0-:7~5~,~0:"01~2~5~,5.,..0-L-L-L-L~
TA -
185
10
Flin-
HIGH RELIABILITY
GENERAL PURPOSE
SCHOTTKY BARRIER DIODES
HEWLETT
~~ PACKARD
TX-2810
TX-2811
TX8-2810 TX8-2811
TXV-2810 TXV-2811
TXVB-2810 TXVB-2811
Features
MEDIUM TURN-ON VOLTAGE
PICO-SECOND SWITCHING SPEED
0.41 (.o16)
L-.....-
O- r
[3ljf.014l----: 1 - -
HERMETIC PACKAGE
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
2M \"00)
MIN.
r-I
Description/Applications
4.321.170)
3.811.150)
-t
25~1~:OO)
O___ 1
Maximum Ratings
Oulline 15
Part
Number
5082-
Minimum
Breakdown
Voltage
VSR (V)
2810
20
2811
15
Test
Conditions
IR=10jJ.A
Maximum
Forward
Voltage
VF (mV)
410
IF~l
VF=l V Max.
at Forward
Current
IF (mA)
Maximum
Reverse
Leakage
Current
IR (nA) at VR (V)
Maximum
Reverse
Leakage
Current at 1250 C
IR (pA) at VR (V)
35
100
15
150
15
20
100
100
mA
Maximum
Capacitance
~(pF)
1.2
VR=OV
f= 1.0 MHz
186
()
Screening Level
Part Number
Commercial
5082-2810
5082-2811
TX-2810
TX-2811
From these three basic levels, four combinations are available. Please refer to Table II as a guide.
TXB-2810
TXB-2811
TXV-2810
TXV-2811
TXVB-2810
TXVB-2811
Screening Test/Inspection
1. Internal Visual ITXV only}
Conditions/Comments
2074
1032
t= 48 hours, TA = 200"C
1051
Condition C. 10 Cycles
5. Hermeticity Tests
Fine Leak
Gross Leak
2006
20 KG, y, axis
1071
Condition H
Condition C
1038
Per Table I
Subgroup 2
DC Electrical Tests at 25C
Subgroup 3
Reverse leakage OR) at TA = 125 C
MILSTD750
Method
Conditions/Comments
2071
LTPD
187
TABLE V.
Te$tII nspeclion
Subgroup 1
Physical Dimension
Subgroup 2
Solderability
Resistance to Solvents
Electrical Test at 25"C OR1,
Subgroup 4
Mechanical Shock
Vibration, Variable Frequency
Constant Acceleration
Electrical Test at 25 C
Subgroup 5
Terminal Strength
SubgroupS
High Temperature Life
INon-operating)
Electrical Test at 25" C 1IR1, Vpl
Electrical Stability Verification
Subgroup 7
Steady State Operating Life
LTPD
2066
15
2026
1022
15
See Table I
VF)
Subgroup 3
Temperature CycHng
Thermal Shock
Terminal Strength
Hermetic Seal
Fine Leak
Gross Leak
Moisture Resistance
Visual and Mechanical
Electrical Test at 25COR1, Vp)
Conditions/Comments
1051
Condition C, 10 Cycles
Condition A
Condition A
1056
2036
10
1071
Condition H
Condition C
1021
2071
See Table I
2016
2056
2006
10
See Table I
2036
Condition E
15
1032
See Table I
1027
188
Flin-
HIGH RELIABILITY
SCHOTTKY
SWITCHING DIODES
HEWLETT
~~ PACKARD
TX-2835
TXV-2835
TXB-2835
TXVB-2835
(Generic S082-283S)
Features
SUITABLE FOR SPACE APPLICATIONS
0.41 (0.016)---1
~J:.
PLANAR PASSIVATED
LOW TEMPERATURE COEFFICIENT
UNIFORM FORWARD TRACKING
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
Description/Applications
CATHODE
f---
II
o:aw.ml
4
f
""11_-
The low forward voltage drop, combined with fast switching and high temperature capability, makes these devices
attractive as replacements for germanium and silicon PIN
junction diodes in such applications as low level switching, clamping, sampling, reference circuits, and low noise
UHF mixers.
~!~
~~
Maximum Ratings
Oulline 15
Symbol
MIn.
VBR
Mo.
100
IR1
Unite
Test CondItions
lIofts
nA
Reverse Current
IA2
100
p.A
Forward Voltage
VFl
0.34
volts
IF"'"
Forward Voltage
VF2
0.45
volts
IF=10mA
Cap"citance
Cro
1,0
pF
100
psec
Effective Minority
Carrier Lifetime
189
mA
VA '" 0, t = 1 MHz
IF=20 mA
Devices undergo 100% screening as specified in Table II and Table III (excluding step 1).
TXV-2835
TXB-2835
FOllowing 100% screen per Table II (delete step 1). samples of lot are subjected to Group A
(Table lIll. and Group B (Table IV).
TXVB-2835
Screening Tesl/lnspectlon
MILSTD-750 Method
(Except as Noted)
Conditions
1. Internal Visual
2074
1032
3. Temperature Cycling
1051
4. Constant Acceleration
5. Hermetic Seal
Fine Leak
Gross Leak
a.
2006
20 KG. Yl axis
1071
1038
Same as Step 7
MIL-STD-750
Method
Conditions
2071
LTPD
Subgroup 2
Electrical Test
IR1. YeA. Cro, WI, VF2 at TA = 25C
Subgroup 3
Electrical Test at TA= 25C
Carrier Lifetime IT)
See Table I
(Read and Record)
See Table I
(Read and Record)
See Table I
(Read al1d Record)
Subgroup 4
Electrical Test
Reverse Leakage (IR) at T A = 125 C
190
"
TesVlnspection
Subgroup 1
Solderability
Resistance to solvents
Subgroup 2
Thermal Shock (Temperature CYCling)
Hermetic Seal
Fine Leak
Gross Leak
DC Electrical Tests OF! and VF)
Subgroup 3
Steady State Operating Life
DC Electrical Tests (lR and VFl
Subgroup 4
Decap Internal Visual
(Design Verification)
Bond Strength
SubgroupS
High Temperature Life
(Non-Operating)
DC Electrical Tests (lR and VF)
Method
Conditions/Comments
2026
1022
LTPD
15
1051
1071
10
Condition H
Condition C or E
See Table I.
1027
2075
2037
20
1032
191
rh~
~~
HIGH RELIABILITY
ZERO BIAS SCHOTTKY
DETECTOR DIODE
HEWLETT
PACKARD
HSCH-OB12
(Generic HSCH-3486)
Features
HIGH TANGENTIAL SENSITIVITY
NO BIAS REQUIRED
HERMETIC GLASS PACKAGE
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
Description/Applications
The high tangential sensitivity of these Schottky Barrier
diodes makes them ideally suitable for narrow bandwidth
video detectors, ECM receivers, and measurement equipment. These diodes also make excellent mixers for use
with low power La.
Maximum Ratings
Operating and Storage Temperature
Range ............................ -5Cto+150C
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
CW Power Dissipation at TCASE = 25 C ....... 300 mW
Derate linearly at 2.40 mW/oC to zero at 150C
Pulse Power Dissipation
Peak Power absorbed by the diode at T A = 25 C
1 JLs pulse, Du = 0.001 .......................... 1 W
DIM~N$lONS IN
Outllrw 1S
Part
Number
Maxfmwn
MinImum
Video
Maximum
Tangential
Voltage
ReeIstance
Forward
Typical
Senelllvlty
TSS(dBm)
SensItiVIty
Viktage
'l'(mV/p.w)
Min.
Max.
VF(mV}
Total Capacitance
Cr(pF)
-54
7$
400
0.30
Rv (Kfl)
HSCt+0812
(Screerwd
HSCH-3486)
Test
Conditions
Video
BandWidth = 2 MHz
ttes! = 10 GHz
192
IF=1 rnA
VFI""OV
f=1 MHz
,/
MIL-STD-1S0 Method
Conditions/Comments
1032
1051
4. Constant Acceleration
2006
1071
Condition G or H.
Condition A or C. Step 1 only.
Fine Leak
Gross Leak
5. Hermeticity Tests
1038
7. Burn-in
PDA=15111
J,VF =5 mV
Nole:
1. If rejects are greater than 15% but less than 30%, one more burn-in may be performed with a new 10% POA.
(\
MIL-STO-750
Method
Conditions/Comments
2071
Subgroup 2
DC Electrical Tests at 25 0 C
15
Per Table I
193
LTPO
194
RELIABILITY DATA
PASSIVATED GENERAL PURPOSE
SCHOTTKY DIODES
r/i~ HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for passivated Schottky
diodes mounted in hermetically sealed glass packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
testing specific lots, under specified conditions and LTPD
levels.
5082-0097
5082-2080
5082-2800
5082-2804
5082-2805
5082-2810
5082-2811
5082-2813
5082-2814
5082-2815
5082-2817
5082-2818
5082-2824
5082-2826
5082-2835
5082-2836
HSCH-1001
400
350
300
I-
.0'
w'
a;
:::>
250
...... r-.
I-
"~
1:l
I-
"i=0
;;""
EA"* 1.2eV
200
.............
!"."
r-..... r---!"."
r-.... ....
150
100
10 3
104
105
106
MTTF (HOURS)
195
107
lOS
Test
2.0
PFM""250 mW
VRM = 800k of VeR
TA=25C f= 60 Hz
2.0
2.0
Note:
1. 1000 hours minimum on all life tests.
Environmental
Test
Temperature Cycling
MIL-STD-750
1051C
Test Condillon
10 cycles from'-65C to 200C, 5 Mrs. al extremes,
5 mi n. transfer
LTPD
10
Thermal Shock
1056
10
Mechanical Shock
2016
10
20G min., 60 Hz
10
10
Vibration Fatigue
Vibration Variable Frequency
Constant Accelerati on
2046.1
2056
Moisture ReSistance
1021.1
10
Salt Atmosphere
1041.1
10
Solderability
2006
2026
196
RELIABILITY OAT A
TRI METAL BEAM LEAD
SCHOTTKY DIODES
r/i~ HEWLETT
':1:.
PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for tri metal beam lead
Schottky diodes mounted in hermetically sealed H
packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
testing specific lots, under specified conditions and LTPD
levels.
5082-2208
5082-2209
5082-2210
5082-2765
5082-2766
5082-2774
5082-2775
5082-2785
5082-2786
5082-2794
5082-2795
5082-2837
400
.....
350
:::::r-.
300
. . . . . r-.
,:!
w' 250
..............
a:
::J
!<a:
EA=I.hV
r-...... ......
!w 200
...z
~
......... t--
lJJl
150
r.......
100
102
103
104
105
10.
MTTF (HOURS)
197
10'
10
10'
Test
2.0
IF=10mADC
TA=17S"C 1=60 Hl:
2.0
2.0
Note;
1. 1000 hours minimum on alilile tests.
Environmental
Test
Temperature Cycling
Test Condition
MIt.-STD-750
1051C
LTPO
Thermal Shock
1056
Mechanical Shock
2016
Vibration Fatigue
2046.1
200 min., 60 Hz
Constant Acceleration
Moisture Resistance
Salt Atmosphere
2006
1021.1
1041
35 C fog, 24 hours
10
198
F/in-
HEWLETT
~~ PACKARD
RELIABILITY BULLETIN
TRI METAL BEAM LEAD
SCHOTTKY DIODES
Conclusion
Hewlett-Packard's beam lead diodes have successfully
passed stringent environmental testing. Hewlett-P3ckard
beam lead diodes may be used in military and space
applications without the necessity of hermetically sealed
packaging.
General
For applications requiring component reliability estimation,
Hewlett-Packard provides reliability data for all families of
devices. Data is compiled from reliability tests run to demonstrate that a product meets the specified design criteria. All
Schottky beam lead families have fulfilled the standard
requirements of reliability qualification, and the results of
these tests are available upon request from
Hewlett-Packard.
SINGLE
program Description
5082-2837
HSCH-5300 Series
HSCH-5500 Series
199
Test sequence
Test
Moisture Resistancel1, al
MILSTIM50
UnllllTeated
Failed
LTPD
80
140 per lot)
<7
25
<10
65 C saturated Nael
solution, 2 cycles
25
<10
Test COndition
1021
Temperature Cycling
1051
COnstant Acceleration
2006
salt Atmospherel 2j
1041
IMIL-STD-883B,
M1002BI
Notes:
1. The sequence of moisture resistance and temperature cycling followed by constant acceleration assures a thorough evaluation of
the effect of exposure to high humidity and heat conditions. End pOints were taken after each test.
2. End points were: Visual at 100X magnification and D.C. testing to MIL-STD-19500.
Results
As demonstrated by these tests, Hewlett-Packard's beam lead
diodes exhibit superior performance when subjected to
severe environmental conditions. This proven reliability is
achieveable because of Hewlett-Packard's unique beam lead
design. These beam lead diodes are made of tri-metal m-ptAu or NiCr-Pt-Au), which extends both the operating and
storage temperature range. In addition, a nitride passivation
layer acts as a sealant and provides immunity from contaminants which could lead to IR drift. Conductive particle
protection is provided by a layer of polyimide, which also
functions as scratch protection. Therefore, it is recommended
that Hewlett-Packard beam lead diodes be used in military
and space applications without the necessity of hermetically
sealed packaging.
200
Flidl
RELIABILITY DATA
BI METAL BEAM LEAD
SCHOTTKY DIODES
HEWLETT
~a PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for bi metal beam lead
Schottky diodes mounted in non-hermetically sealed E-1
packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
testing specific lots, under specified conditions and LTPD
levels.
5082-2277
5082-2279
5082-2280
5082-2291
5082-2292
5082-2294
5082-2830
5082-2831
5082-9300 Series
5082-9600 Series
(
200
e
'w'"
150
0:
-"" ...
"
::>
I-
~"
~
IZ
r"-i"o
100
....
""
;::
u
z
'l
50
103
104
106
10
MTTF (HOURS)
201
.... ""
...........
107
.... ....
10S
Test Condltionsl]
Storage at 125" C
2,0
PFM"'50 mW
TA'" 25C f = 60 Hz
2,0
Note:
1, 1000 hours minimum on all life tests,
Environmental
Test
Temperature Cycling
Te$t Condition
MILSTO750
1051C
LTPO
10
Thermal Shock
1056
10
Mechanical Shock
2016
10
2056
10
Moisture Resistance
1021.1
10
Salt Atmosphere
1041,1
10
10
SOlderability
2026
202
Flin-
RELIABILITY DATA
MESH SCHOTTKY DIODES
HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for mesh Schottky diodes
mounted in hermetically sealed glass packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
lesting specific lots, under specified conditions and LTPD
levels.
5082-2356
5082-2370
5082-2396
5082-2400
5082-2401
5082-2520
5082-2521
5082-2565
5082-2566
5082-2755
5082-2787
5082-2900
5082-2912
5082-2970
5082-2997
HSCH-3486
200
r--...
_150
",:'
............
'-
r--...
w'
a:
"!;;
fA = 1.2.V I'--r-.
....... 1'--
:;; 100
-I'--
IZ
;;
50
102
103
104
1(J5
10
MTTF (HOURS)
203
107
lOS
1()9
Test Condltionsl 1J
Storage at 1~O" C
2.0
PFM= 125 mW
VRM = 80% of VeR
TA 2S"C 1=60 Hz
2.0
VR = 80% of VBFI
TA=100'C
3.0
Note:
1. 1000 hours minimum on all life tests.
Environmental
Test
Temperature Cycling
Test Condition
MILSTD-750
1051C
LTPO
10
10
Thermal Shock
1056
Mechanical Shock
2016
10
2Q56
10
Moisture Resistance
1021,1
10
Terminal Strength
2036.1
Condition A
10
10
SOlderability
2026
204
FliOW
RELIABILITY DATA
PASSIVATED
N-TYPE MICROWAVE
SCHOTTKY DIODES
HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for N-type passivated
microwave Schottky diodes mounted in non-hermetic
unsealed 44 packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
testing specific lots, under specified conditions and LTPD
levels.
5082-2297
5082-2298
5082-2701
5082-2702
5082-2706
5082-2707
5082-2711
5082-2712
5082-2713
5082-2714
5082-2723
5082-2724
HSCH-3206
HSCH-3207
200
..........
t'--"
~
........
150
.........
to'
w'
a:
::>
>-
..
. . . . . . . r-... . . .
1.i
>-
..... 1-.
fA
~ 1,2.V ~
100
" r-.... . .
"i=
0
z
;;"
i"
50
103
10'
105
106
MTTF (HOURSI
205
10'
108
Test
Storage at 1250 C
3.0
PfM =75 mW
VRM = 80% of VeR
TA = 25C f'" 60 Hz
4.0
Note:
1. 1000 hours minimum on all life tests.
Environmental
Test
Temperature Cycling
MIL-STO-7S0
1051C
Test Condition
LTPD
10
Thermal Shock
1056
10
Mechanical Shock
2016
10
Vibration Fatigue
2046,1
20G min" 60 Hz
10
2056
10
2006
10
Moisture Resistance
1021.1
10
Salt Atmosphere
1041.1
12
Constant Acceleration
206
Flin-
RELIABILITY DATA
PASSIVATED
P-TYPE MICROWAVE
SCHOTTKY DIODES
HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all
families of devices. Data is compiled from reliability tests
run to demonstrate that a product meets the design criteria. Periodically, additional tests are run. The data on this
sheet represents the latest review of accumulated test
results. All data recorded here is for P-type passivated
microwave Schottky diodes mounted in non-hermetic
unsealed 44 packages.
Applications
This information represents the capabilities of the generic
device. Failure rate and MTTF values presented here are
achievable with normal MIL-19500 test screening. Reliability can be guaranteed only under specified conditions by
testing specific lots, under specified conditions and LTPD
levels.
200
..........
10.", ....
150
.......
.......
E
t='
ui
::J
t-
EA '" 1.2eV
ffi
~t-
........
..............
0:
........ ........
100
........... ......
";::0
r....1'
i'
;;
50
103
I
104
105
106
MTTF IHOURSI
207
107
10'
Test
Storage at 125" C
4.0
PFM= 100mW
VRM '" 80".1. of VeA
TA=25C f:60 Hz
3.0
Note:
1. 1000 hours minimum on all lite tests.
Environmental
Test
Temperature Cycling
MIL-STO-750
10510
Test ConditiOn
10 cycles from -65C to 2OOC, 5 hra. 'at extremes,
5 min. transfer
Thermal Shock
1056
Mechanical ShOck
2016
Vibration Fatigue
2046.1
2056
LTPO
10
10
10
20G min" 60 Hz
10
10
2000 Hz
Moisture Resistance
1021.1
10
Salt Atmosphere
1041.1
12
208
ABSTRACTS OF
APPLICATION NOTES AND BULLETINS
The Microwave Semiconductor Division field sales force is supported by a division applications staff. These technical specialists
investigate circuit applications of most interest to the users of these semiconductor devices. The results of these investigations
are reported in application notes or brief application bulletins. A complete list with brief abstracts is presented here.
Below is a brief summary of Application Notes for diodes and transistors. All of the Application Notes are available from your
local HP Sales Office or nearest Components Authorized Distributor or Representative.
Among the subjects discussed are the performance characteristics of video detector diodes - tangential sensitivity,
video resistance, voltage sensitivity and figure of merit; how
these characteristics affect the bandwidth of a video detector, video detector design considerations; considerations
that affect dynamic range; and considerations that vary the
level at which burnout can occur.
Discusses switching, sampling, mixing, and other applications where the substitution of Schottky diodes will provide
significant improvement over PN junction devices.
956-3
956-4
986
9987
signal level is high, rectified current may reduce the impedance without the need for bias current Measurements with
the 5082-2755 diode are used to illustrate this effect.
Schottky Diodes
AB 5
AB 7
Beam Lead devices are particularly attractive for hybrid circuits because of their low parasitics and small size. The
availability of equipment and techniques specifically designed for their small size has facilitated the handling and
bonding of these devices. This application note describes
some of this equipment and techniques, and outlines suggestions forthe proper handling and bonding of Beam Lead
devices.
8992
This application bulletin gives a general description of various methods of attaching beam lead components to both
hard and soft substrates. A table summarizes the most
common attachment methods with advantages, disadvantages, and equipment costs.
The hard gold surface on standard pc boards with soft substrate material makes it almost impossible to successfully
bond beam lead diodes onto the boards with normally
210
A detector circuit such as one used for AGC or video detection simply realized with the use of the HSCH-1001 Schottky
diode is described in this application bulletin.
Simple "and" and "or" gates consisting of diodes and resistors can be combined into circuits which will perform
increasingly complex functions. The achievement of low
loss when the diode is biased on and of high isolation when
the diode is biased off are the principal characteristics of
these types of logic gates. This application bulletin describes how the HSCH-1001 Schottky diode is particularly
suited for this type of application because of its low forward
voltage and other inherent characteristics.
211
c'
213
Device Characteristics
The principal parameters of a PIN diode which
play major roles in determining the
performance of a circuit include the following:
RF Resistance
214
[-
("-->
Capacitance
Diode capacitance limits switch and attenuator
performance at high frequencies in the form of
isolation rolloff and increased insertion loss.
Optimum performance can be achieved by one
of several alternatives available. Using a low
capacitance diode would be one solution. Since
the junction capacitance of a PIN diode is
related to the geometry and electrical properties
of the I-layer similar to the case of RF
resistance, an R-C trade-off may be feasible.
Special techniques can be employed to
minimize capacitive (and other parasitic)
effects, and in some cases even to take
advantage of them. (Some of the techniques for
improving high frequency performance are
discussed in Application Notes 922 and 957-2.)
215
Switching Speed
In many applications, switching time is very
important. Reverse recovery time is a measure
of the switching time of a PIN diode, the time
required to switch the diode from ON to OFF.
The time needed to switch the diode from OFF
to ON is shorter. (See Application Note 929 for
details).
SWitching Applications
The performance of a PIN diode circuit is
directly related to the basic characteristics of
the diode. As an illustrative example, the
performance of a PIN diode switch can be
simply approximated by treating the PIN diode
essentially as a resistor in the forward biased
state and a capacitor in the reverse biased state.
Switch performance can then be analyzed as
follows:
Insertion Loss
The loss of signal attributed to the diode when
the switch is on (transmission state) is insertion
loss. For low insertion loss, low resistance is
needed in a series switch (Figure 1). Low
capacitance (particularly at high frequencies) is
needed in a shunt switch (Figure 2) .
.8
150
c=J50
.6
.4
~3900-
HPND-4005-
//
.2
V.
r--
~I(pND-4001
I.L. = 10 LOG
~+ 1~0)
HP~D-405~
5082-0~01.
0012
5082-0034
2
DIODE RESISTANCE - R (OHMS)
FREQUENCY (GHz)
216
70r--------------,--------------~
50
f--------OJ50
60r-------------~--------------~
n-----i
40r---~'"------~--------------~
20~------------~----~~------~
10r--------------+------~~~~~
FREQUENCY IGH,)
Attenuators
Phase Shifters
\6,
Limiters
Sensitive amplifiers, mixers, and detectors in
microwave systems can be protected against
damage by high level signals with the use of a
PIN diode limiter shunting the transmission line.
217
Maximum
Junction
Capacitance
(pF)
( ote 1)
0.02'"
eftR
0.025 ....
Typical
RF
Resistance
R. (n)
(Note 3)
4.7ft
Chip
0.08'
6.0t
1.8ttt
0.12
0.8
0012
0.12
0.8
0030
0.15
0.15"
0.6
1.3ttt
0047
0.16"
0.8ft
0001
0.20
1.5
0025
0.20
0.20
1.2"
2.0
0.6
OAttt
0039
0049
0034
Package
Capacitance
(pF)
Pages
Beam
Lead
HPND4005
3900
HPND4001
Glass
(15)
3001
3002
3039
3077
i N5719
HPND4165
HPND4166
Ceramic
(31)
(38)
3201
3202
3101
3102
3303
3304
(60)
Stripline
(61)
3140
3040
3170
3340
3141
3041
3071
HPND4050
3042
3043
3080
3379
1 N5767
3081
3306
3305
3046
3168
3188
(Note 2)
.13
.2
.2
.03
Notes:
1. All capacitance measured with VR = 50 volts, except:
'VR = 30 volts
'''VR = 10 volts
"VR = 20 volts
.... VR = 0 volt
t1F=50 mA
ttlF = 20 mA
tttlF = 10 mA
218
.03
(./
Page Number
Commercial
Data Sheet
Standard
Hi-Rei
Data Sheet
Part No.
Description
HPND-4001
HPND-4005
HPND-4050
HPND-4165
HPND-4166
JAN 1N5719
JANTX 1 N5719
TXVB-3001
TXVB-3002
TXVB-3039
256
256
260
260
260
TXVB-3042
TXVB-3043
TXVB-3077
TXVB-3080
TXVB-3141
Hi-Rei 5082-3042
Hi-Rei 5082-3043
Hi-Rei 5082-3077
Hi-Rei 5082-3080
Hi-Rei 5082-3141
263
263
260
266
272
TXVB-3168
TXVB-3188
TXVB-4001
TXVB-4005
TXVB-4050
Hi-Rei 5082-3168
Hi-Rei 5082-3188
Hi-Rei 5082-4001
Hi-Rei 5082-4005
Hi-Rei 5082-4050
269
269
252
254
252
1N5719
1N5767
5082-0001
5082-0012
5082-0025
229
229
220
220
220
5082-0030
5082-0034
5082-0039
5082-0047
5082-0049
220
220
220
220
220
5082-1001
5082-1002
5082-1006
5082-3001
5082-3002
248
248
248
229
229
5082-3039
5082-3040
5082-3041
5082-3042
5082-3043
RF PIN Diode
Stripline PIN Diode
Stripline PIN Diode
RF PIN Diode
RF PIN Diode
229
235
235
229
229
5082-3046
5082-3071
5082-3077
5082-3080
5082-3081
235
233
229
229
229
5082-3101
5082-3102
5082-3140
5082-3141
5082-3168
RF Pin Diode
RF Pin Diode
Hermetic Stripline PIN Diode
Hermetic Stripline PIN Diode
VHF/UHF Switching PIN Diode
2413
246
240
240
229
5082-3170
5082-3188
5082-3201
5082-3202
5082-3303
240
229
246
246
246
5082-3304
5082-3305
5082-3306
5082-3340
5082-3379
RF PIN Diode
High Speed Switch PIN Diode
High Speed Switch PIN Diode
Stripline PIN Diode
VHF/UHF Attenuator PIN Diode
246
244
244
235
229
5082-3900
226
222
224
222
229
229
219
252
254
252
Reliability
Data Sheet
276
276,278
276
282
282
282
280
260
260
282
282
260
282
263
263
260
266
282
280
272
269
280
269
280
r/i~ HEWLETT
~~ PACKARD
5082-0001
5082-0012
5082-0025
5082-0030
5082-0034
5082-0039
5082-0047
5082-0049
Features
WIDE RANGE OF CAPACITANCE
0_12 pF to 1_2 pF Maximum
I-tJ II
I~x-I
OXIDE PASSIVATED
r--~=------'I v
f
Outline 01
Description
These PIN diode chips are silicon dioxide passivated of mesa
(5082-0001 I, pitted planar (5082-0012, -00301, and planar
(5082-0047, -0034, -0025, -0039, -00491 construction. The fabrication processes are optimized for long term reliability and
tightly controlled for uniformity in electrical performance.
0011
(}imenstfm
0047
0030
0.13
0.38
0034
0015
023
0.51
(201
(151
0.13
009
15)
13.5)
Top
Contact
ca~~~(ie
-Bottom
Contact
Au,
Ano-de
0.15
Au.
Anode
Ag.
Anode
Au.
Calhode
(6)
0049
0.24
(9.51
(9)
(5)
0039
023
(9
0001
0.06
12"
0.38
( 15)
008
1321
0.11
;4.51
ca~~~de
Au.
Anode-
Au.
Anode.
Cathode
Au.
Maximum Ratings
Junction Operating and Storage
Temperature Range ................
Applications
-65'C to +150'C
Soldering Temperature
5082-0012, -0025, -0030, -0034, -0039,
-0047, -0049 ......... +425' C for one minute maximum
5092-0001 .......... +300' C for one minute maximum
Operation of these devices within the above temperature ratings will assure a device Median Time To
Failure (MTTF) of approximately 1 x 107 hours.
220
Electrical Specifications
at TA = 25C
Chip
Part
Nearest
Equivalent
Packaged
Typical
Series
Resistance
Rs(n)
Lifetime
Typical
Rent..
Recovery
Time, lrr
r(n$)
(n$)
5082
Part No.
5082.
VBR(V)
Maximum
Junction
Capacitance
Ci(pF)
0012
3001
150
0,12
0.8
400
100
0030
3301
150
0-12
0.8
400
100
100
Number
Minimum
Breakdown
Voltage
Typical Parameters
Typl,:al
0047
3001
150
0,15
0.6
400
0001'
3041
70
0.16'
O.S'
15
0025
3080
100
0.20
1.5
1300
1000
0039
3081
100
0.20
2,0
2000
0049
3046
300
0.20
0.6
1000
0034
3168
35
1,2'
0.4*'
40
12
VR "'VBR
Measure
IR :510 "A
VR=50V
'VR "" 20V
f 1 MHz
13]
IF=100mA
'IF= 20 rnA
''If=10mA
f= 100 MHz
IF= 50 rnA
IR""250 rnA
If ",,'20 rnA
VR'" 10V
[1'.2]
1000
"
200
Notes:
1. Use standard thermocompression bonding techniques. Ultrasonic bonding is not recommended.
2. Either ultrasonic or thermocompression bonding techniques can be employed.
3. Total capacitance CT = Cj + C p , where Cj is the junction capacitance under reverse bias and C p is the package parasitic capacitance.
221
Flin-
LOW LOSS
BEAM LEAD
PIN DIODES
HEWLETT
~~ PACKARD
HPND -4001
HPND -4050
Features
LOW SERIES RESISTANCE
1.3!l Typical
LOW CAPACITANCE
0.07 pF Typical
FAST SWITCHING
2 ns Typical
RUGGED CONSTRUCTION.
4 Grams Minimum Lead Pull
WH
====~~~~=====~\'-_____1
T
Description
6012.4)
The HPND-4001 and -4050 are beam lead PIN diodes designed
specifically for low capacitance, low series resistance and rugged
construction. The new H P mesa process allows the fabrication of
beam lead PINs with a very low RC product. A nitride
passivation layer provides immunity from contaminants which
would otherwise lead to IR drift. A deposited glass layer
(glassivated) provides scratch protection.
mm
OuUine 07
Applications
The HPND-4001 and -4050 beam lead PIN diodes are designed
for use in stripline or microstrip circuits. Applications include
switching, attenuating, phase shifting and modulating at
microwave frequencies. The low capacitance and low series
resistance at low current make these devices ideal for
applications in the shunt configuration.
Maximum Ratings
Operating Temperature...............
Storage Temperature ................
-----T
-65C to +175C
-65C to +200C
222
Part
Number
Series
Resistance
Re (11)
Capacitance
CT (pF)
Minority Carrier
Lifetime
T (ns)
Reverse Recovery
Time
Irr (ns)
Min.
Typ.
Typ.
Max.
Typ.
Max.
Typ.
Typ.
HPND-4001
50
80
1.8
2.2
0.01'
0.08'
30
HPNO-4050
30
40
1.3
17
012
015
25
3
2
IF"" 10 rnA
IR = 6 rnA
IF = 10 mA
VR = 10V
Test
IF = 10 rnA
f= 100 MHz
VR "" VSR
Measure
IR $10 IlA
Conditions
VR = 10 V
'VR 30V
f = 1 MHz
Typical Parameters
100
<i:
S
w
>-
ffi
a:
a:
"in
:::l
"a:
10
i:ia:
;:
a:
a:
ir
1.0
0.1
FORWARD VOLTAGE (VOLTS)
1.0
10
100
Bias Current.
0.30
:;;
i=
~ 0.20
w
....
13
;;:
;3
0,10
20
>-
8'i
>
o
~
a:
~
HPND-4050
'-..
10
8'i
HPND-4001
~
a:
10
20
10
30
20
30
223
BEAM LEAD
PIN DIODE
rli~ HEWLETT
~~ PACKARD
HPND- 4005
Features
HIGH BREAKDOWN VOLTAGE
120V Typical
LOW CAPACITANCE
0.017 pF Typical
LOW RESISTANCE
4.70 Typical
RUGGED CONSTRUCTION
4 Grams Minimum Lead Pull
(1) 1J!LII'------~:g(*ID
NITRIDE PASSIVATED
'-LWo(~:l)
OIMEN$JON$ iN ~m (1/1000 inch)
Description
Outline 21
Applications
The HPND-4005 beam lead PIN diode is designed for use in
stripline or microstrip circuits. Applications include switching, attenuating. phase shifting, limiting and modulating at
microwave frequencies. The extremely low capacitance of
the HPND-4005 makes it ideal for circuits requiring high
isolation in a series diode configuration.
Maximum Ratings
Operating Temperature .................. - 6SC to + 17SC
Storage Temperature .................... - 6SC to + 200C
Operation of these devices within the above
temperature ratings will .assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
Power Dissipation at TeAsE
224
Symbol
Min.
Typ.
Max.
Units
Breakdown Voltage
V BR
100
120
Series Resistance
Rs
4.7
6.5
Ohm
Capacitance
CT
.017
.02
pF
100
150
ns
Irr
20
35
ns
Conditions
IR= 10 ~A
IF =20 rnA,
1=100 MHz
VR =10V,
f=10GHz
IF=10mA
fR~6 rnA
IF= 20 rnA
VR ", 10 V
90% Recovery
'TYpical Parameters
:
w
<..l
~ 100
\=-----+- .->..;c--'----I-----"
iii
w
a:
u.
a:
.0' '--_ _
~_L
.25
_ _ _ _ _ _..L_ __ '
.50
.75
1.00
'OL,-~~ill.,c-~L4WL,~~~~,OC-~~~,00
1.25
40
0.10
ISOLATION AT:
.,
-30V
-10V~,
'" "
~30
ov.....
~ 20
<Jl
<Jl
'~,
.......... ,
0.01:1
"....,
10mA
" 0.06
~
~
g
>=
ffi
........ ~ '(I);;
0.04
20mA
1\
"-----
50 rnA
10
10
0.0 2
10
18
FREQUENCY (GHz)
20
30
225
Flio-
BEAM LEAD
PIN DIODE
HEWLETT
~~ PACKARD
Features
5082-3900
Outline Drawing
I.
c
)
LOW CAPACITANCE
0.02 pF Typical
RUGGED CONSTRUCTION
2 grams Minimum Lead Pull
NITRIDE PASSIVATED
730(~1
680 (26-.8)
;?Q!i(l'L4'-t-2S.Q(11.01:t~6(10~)-+
200 (79-j
1_190 (14)
200 {7,9}
: ] [ : --------+--~=r-----.~
i~:
CATHODE
;C;;:==='i\}~_-=;;;:====-----1
'-----' _ _ _ _ _
~~
t
Description
1-j
The 5082-3900 planar beam lead PIN diode offers low capacitance to allow high isolation at RF and Microwave frequencies.
Nitride passivation and rugged construction insures reliable
performance and assembly yields.
255(10.0)
165 (6.5'
65 {2EI
4d{1:s}
DIMi!:NSloNS IN pm (1/1000 inch'
Outline 06
Maximum Ratings
Applications
Operating Temperature
Storage Temperature
..............
-60C to + 150C
Operation of these devices within the above temperature ratings will assure a device Median Time to Failure
(MTTF) of approximately 1 x 107 hours.
226
Min.
Typ.
Max.
Units
Conditions
VeR
150
200
I r =10"A
Series Resistance
Rs
ohm
Capacitance
Co
0.02
0.025
pF
ns
Parameter
Breakdown Voltage
150
Typical Parameters
100
<t
....z
..
10
CJ
1.0
a:
0.1
.01
.4
=
lK
a:
10K
<:
;;:
w
a:
a:
:J
lOOK
100
,...~
I10
g
f::
.6
.8
1.0
1.2
1.4
1.6
'" ""
111111
1111111
1 1111I~
0.0001 0.001
0.01
0.1
1.8
11111
1111111
10
"I"
227
100
4. Bonding
Thermocompresslon: See Application Note 979 "The Handling and Bonding of Beam Lead Devices Made Easy".
This method is good for hard substrates only.
2. Handling
I n order to avoid damage to beam lead devices, particular
care must be exercised during inspection, testing, and
assembly. Although the beam lead diode is designed to
have exceptional lead strength, its small size and delicate
nature requires special handling techniques be observed
so that the device will not be mechanically or electrically
damaged. A vacuum pickup is recommended for picking
up beam lead devices, particularly larger ones e.g., quads.
Care must be exercised to assure that the vacuum opening of the needle is sufficiently small to avoid passage of
the device through the opening. A #27 tip is recommended
for picking up single beam lead devices. A 20X magnification is needed for precise positioning of the tip on the
device. Where a vacuum pickup is not used, a sharpened
wooden Q-tip dipped in isopropyl alcohol is very commonly used to handle beam lead devices.
3. Cleaning
For organic contamination use a warm 75C) rinse of
trichloroethane followed by a cold rinse in acetone and
methanol. Dry under infrared heat lamp for 5-10 minutes
on clean filter paper. Freon degreaser may replace trichloroethane for light organic contamination.
Reflow: By preparing the substrate with tin or solder plating, reflow solderi.ng can be suitably preformed using a
modified wire bonder. The probe is used as a soldering tip.
WEST BOND or UNITEK bonders make suitable bonds.
228
Flidl
HEWLETT
~e. PACKARD
1N5767 *
5082-3001/02
5082-3039 *
5082-3042/43
5082-3077*
5082-3080*
5082-3081
5082-3168/88 *
5082-3379
HPND-4165/66
Features
LOW HARMONIC DISTORTION
LARGE DYNAMIC RANGE
LOW SERIES RESISTANCE
LOW CAPACITANCE
LOW TEMPERATURE
COEFFICIENT
Typically Less Than 20%
Resistance Change from
25C to 100C
Description / Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters. The 5082-3168/3188 are optimized for
VHF/UHF bandswitching.
The RF resistance of a PIN diode is a function of the current
flowing in the diode. These current controlled resistors are
specified for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF
limiters.
Outline 15
Mechanical Specifications
Maximum Ratings
229
Part
Number
5082
Minimum
Breakdown
Voltage
VS R (V)
Maximum
Residual Series
Resistance
Rs (m
Minimum
Effective Carrier
Lifetime
r (ns)
Maximum
Reverse Recovery
Time
trr (ns)
0.25
300
1.0
100
100 (typ)
-3001
0.25
200
1.0
100
100 (typ)
-3039
0.25
150
1.25
100
100 (typ)
IN5719
0.3**
150
1.25
100
100 (typ)
-3077
0.3
200
1.5
100
100 (typ)
FAST SWITCHING
-3042
-3043
0.4'
70
1.0'
15 (typ)
OA'
50
1.5"
15 (typ)
10
1.0'
35
0.6"
40 (typ)
12 (typ)
35
0.5"
40 (typ)
12 (Wp)
BAND SWITCHING
-3188
-3168
Test
Conditions
2.0'
VR
= 50V
VR
"VR =100V
f=
= VBR
Measure
IF
100mA
'IF = 20mA
IR';:; 10ilA
1 MHz
= 20mA
= 10V
IF'" 50mA
IF
IR = 250mA
VR
90% Recovery
HI F = lOmA
f=100MHz
Note: Typical CW power switching capability for a shunt switch in a 50n system is 2.5W.
Minimum
Breakdown
Voltage
VS A (V)
Maximum
Residual
Series
Resistance
Rs (Q)
Maximum
Total
Capacitance
Cr (pF)
High
Resistance
Limit, RH (Q)
Low
Resistance
Limit, RL (n)
Min.
Max.
Min.
Max.
HPND4165
100
100
1.5
0.3
1100
1660
16
24
.04
HPND-4166
100
100
1.5
0.3
830
1250
12
18
.04
5082-30aO'
1300(typ)
100
2.5
0.4
1000
8"
1500
8"
8"
Part
Number
5082-3379
1300(typ}
50
5082-3081
2000 (typ)
100
3.5
OA
Test
Conditions
'F;50mA
'R=250mA
VA=VSR,
Measure
IR';:;lOIlA
IF=100mA
VR"'50V
f;lmHz
0.4
f~100mHz.
IR =
VF =
1V maximum at IF = 100mA.
230
= 50V
'F=O.OlmA
f=100mHz
IF =1.0mA
HI F =20mA
f=100mHz
Maximum
Difference in
Resistance
YS. Bias
Slope, AX
BatCh Matched at
IF=O,OlmA
and 1.0mA
f=100mHz
Typica! parameters
1.2
FORWARD VOLTAGE (V)
L~P6~ ~lt!.~T~
.
Vi
~'"HIGH RESISTANce-I
:;;
CURRENT
Vi
SPEC LiNlITS
.I
J:
:;;
.I
J:
"in
"in
a:
a:
a:
a:
100
.001
100
FORWARD BIAS CURRENT (rnA)
VS.
1.0,--,---,---r---,---,---,---,
I
""
"
J:
1-\---
"u
>:::
"in
.5
:;'
iiia:
"
a:
50823039.
HPNO4165i66
5082 3042/43
IN5719
VS.
10
20
I1
30
40
70
231
2.0
u.
..sw
z<J
<
....
OJ
~
<
<J
1.5
1.0
.5
30
..
l\
w
:;
~\ ~
('
;:
>
tt:
I
r- S082-3168
10
20
>
15
~tt:
W
S082.:\'88
10
'"ffi
~
"- r---
00
25
.s
tt:
5Il8MOSOi81
[1082-331t1
20
30
40
50
60
70
VB.
Reverse Voltage.
. 1>032 3001
3002
3OJ9
3077
"
:s
;:
>
i;l
tt:
>
40
tt:
0
ffi
0
20
iii
INS119
'\
t;;
100
tt:
ii:
tt:
60
;:
~ t-....
9w
'"ffi
III
10
20
rEQrlllCl'O
iii
a:
0
40
t;;
a:
ii:
~-'
\\
\ "- ......
a:
50
60
CD
70
800
20
30
40
60
60
80
10
30
10
FREQUENCY (MHz)
:s
Ffrr2j'
100
30
20
5082-3IlOO
-...: r-.
eo
tt:
10
30
1000
:;
20
10
, r--..
i\
"'10
20
30
1-r-"I
5032-3050
S082-$379
5llS2>i'
40
50
60
70
80
232
Flin-
PIN DIODE
LIMITER
HEWLETT
~e.tII PACKARD
5082-3071
Features
HIGH POWER HANDLING CAPABILITY
50 W Peak Pulse Power
LOW INTERMODULATION PRODUCTS
Typical 0.2 W Threshold Assures Wide Dynamic
Linear Range
BROAD BANDWIDTH
500 MHz to 10 GHz
LOW INSERTION LOSS
Less than 1 dB in X-band
EASY TO USE
Package Compatible with Stripline and Microstrip
(4pt,.ACESJ
Maximum Ratings
Description/Applications
The HP 5082-3071 passive limiter chip is functionally
integrated into a 50 ohm transmission line to provide a
broadband, linear, low insertion loss transfer characteristic
for small signal levels. At higher signal levels selfrectification reduces the diode resistance to provide limiting
as shown in Figure 2. Limiter performance is practically
independent of temperature over the rated temperature
range.
Mechanical specifications
The cover channel supplied with each diode should be used
in balanced stripline circuits in order to provide good
electrical continuity from the upper to the lower ground plane
through the package base metal. Higher order modes will be
excited if this cover is left off or if poor electrical contact is
made to the ground plane.
The package transmission channel is filled with epoxy resin
which combines a low expansion coefficient with high
chemical stability.
233
5082
Package
Outline
Heat
Sink
3071
61
Cathode
1.2
2.0
Test
Conditions
Pin ~ OdBm
f = 9.4GHz
Pin OdBm
f=9.4GHz
Maximum Insertion
Loss (dB)
Maximum
SWR
Maximum RF Leakage
Power (WI
1.0
P,n=50W
Typical Recovery
Time (os)
100
Pin; 50W
234
Flin-
HEWLETT
~~ PACKARD
5082-3040
5082-3041
5082-3046
5082-3340
STRIPLINE PIN
DIODE SWITCHES/
ATTENUATORS
Features
LOW COST TO USE
Designed for Easy Mounting
BROADBAND OPERATION
HF through X-band
LOW INSERTION LOSS
Less than 0.5 dB to 10 GHz (5082-3040, -3340)
HIGH ISOLATION
Greater than 20 dB to 10 GHz
FAST SWITCHING/MODULATING
5 ns Typical (5082-3041)
LOW DRIVE CURRENT REQUIRED
Less than 20 mA for 20 dB Isolation (5082-3041)
Description/Applications
These diodes are designed for applications in microwave and
HF-UHF systems using stripline or microstrip transmission
line techniques.
Typical circuit functions performed consist of switching.
duplexing, multiplexing, leveling, modulating, limiting, or
gain control functions as required in TR switches, pulse
modulators, phase shifters, and amplitude modulators
operating in the frequency range from HF through Ku-Band.
Outline 61
These diodes provide nearly ideal transmission characteristics from HF through Ku-Band.
Maximum Ratings
The 5082-3340 is a reverse polarity device with characteristics similar to the 5082-3040. The 5082-3041 is
recommended for applications requiring fast switching or
high frequency modulation of microwave signals, or where
the lowest bias current for the maximum attenuation is
required.
-3040
-3340
-65C to
125C
-3041
-3046
-65C to
125C
Power Dissipation[1]
2.5W
1.0W
4.0W
225 W
50W
2000W
150V
70 V
300V
Soldering Temperature
Notes:
1. Device properly mounted in sufficient heat sink at 25 C, de-
Mechanical specifications
2. t p =ll's,f=10GHz,Du=O.001,Zo=50(l,T A =25C.
Operation of these devices within the above
235
Part
Number
Minimum
Isolation
Maximum
Insertion
Loss
(dB)
(dBI
Maximum
SWR
Typical
CWPowar
Switching
Capability
Maximum
Reverse
Recovery
Time
t,r
(ns)
Typical Carrier
Lifetime
PA
(nsl
(WI
30
5082
Package
Outline
3040
61
Anode
20
0.5
1.5
400
3041
61
Cathode
20
1.0
1.5
10
15
13
3046
61
Anode
20
1.0
1.5
..
1000
50
3340
61
Cathode
400
30
..
..
Test
Conditions
(Note 3)
Heat
Sink
20
0.5
IF ",1 OOmA
(Except
3041;
IF=20mA)
..
1.5
IF'" 0
Pin'" tmW
..
IF'" SOmA
IR" 2SOmA
IF'" 20mA
IF'" 0
Pin" tmW
VR" 10V
Recovery
to 90%
Note 3:Test Frequencies: 8 GHz 5082-3041. -3046; 10 GHz 5082-3040. and -3340.
Typical Parameters
12
FORWARD VOLTAGE (V)
34
1.8
1.4
1.2
1.6
1.0
0.8
~
~'~~-
0.6
0.4
0.2
~ i-""'"
2
:/V
10
12
"/
1.4
~-
A~LDIO/
---
14
16
FREQUENCY {GHz}
1.2
18
f1
32
30
28
.....
26
........
~,)'O~l
1'-..)'a,,6'
........,
,,~
24
........,
r--
22
-........
20
10
12
14
16
18
FREQUENCY (GHz)
236
18
2
10
12
14
16
18
FREQUENCY {GHz}
100
BIAS CURRENT (rnA)
Equivalent Circuits
Forward Bias(lsolation State)
Zo=50n
Rp
Lp
Zo=50n
Lp
Rp
Lp
Rp
r = 1
Er'" 1
R,
Lp
Zo"'50.n
Er= 1
R,
--2--
c,
5082
Lp
Rp
Rs
Ll
(pHI
(m
(m
(pH)
(mm)
(mm)
3040,3340
200
0.25
1.0
20
2.4
5.0
3041
220
0.25
1.0
20
2.4
5.0
3046
220
0.25
0.6
17
2.4
5.0
Rp
Rl
L2
H2
CT
6082
(11)
(KI1)
(pH)
(Km
(pFI
(mml
2
(mm)
3040,3340
200
0.25
()O
5.0
0.10
2.4
5.0
3041
220
0.25
00
1.5
0.15
2.4
5.0
3046
220
0.25
DO
1.5
0.15
2.4
5.0
Part Number
237
RF SWITCHING SPEED
HP 5082-3041
The RF switching speed of the HP 5082-3041 may be considered in terms of the change in RF isolation at 2 GHz. This
switching speed is dependent upon the forward bias current,
reverse bias drive pulse, and characteristics of the pulse
source. The RF switching speed for the shunt-mounted stripline diode in a 50 n system is considered for two cases: one
driving the diode from the forward bias state to the reverse
bias state (isolation to insertion loss), second, driving the
diode from the reverse bias state to the forward bias state
(insertion loss to isolation).
D.U.T.
'"
~"I-~-"""~.0"k-ni.)tl--'>---<-=-r-50-n""
TO SCOPE
The total time it takes to switch the shunt diode from the
isolation state (forward bias) to the insertion loss state
(reverse bias) is shown in Figure 6. These curves are for
three forward bias conditions with the diode driven in each
case with three different reverse voltage pulses (VPR). The
total switching time for each case includes the delay time
(pulse initiation to 20 dB isolation) and transition time(20dB
isolation to 0.9 dB isolation). Slightly faster switching times
may be realized by spiking the leading edge of the pulse or
using a lower impedance pulse driver.
3or-----r---~r----~
]
~
,.>=
25
20
ffi
>
15
~
w
il
10
24
I,
r;
'10mAI I L
IF ""SOmA
If *20mA
I i
I
Ii
6
2
1V
11
~W
a:
0~-~-~,0~--~-~2~0-~-~30
FORWARD CURRENT (rnA)
II
1\: I, l
~lt~1.+~~
H"
2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 10
TIME (ns)
10 01----"---:,~O---'---:::---~--:30
FORWARD CURRENT {rnA}
238
'OO~--~--~'O~--~--~2~O---L--~30
FORWARD CURRENT (mA)
239
Fli;'
HEWLETT
a:~ PACKARD
5082-3140
5082-3141
5082-3170
Features
BROADBAND OPERATION
HF through X-band
LOW INSERTION LOSS
Less than 0.5 dB to 10 GHz (5082-3140, -3170)
HIGH ISOLATION
Greater than 20 dB to 10 GHz (5082-3140, -3170)
FAST SWITCHING/MODULATING
5 ns Typical (5082-3141)
LOW DRIVE CURRENT REQUIRED
Less than 20 mA for 20 dB Isolation (5082-3141)
Qutline60
Description/Applications
The HP 5082-3140 and -31.70 are passivated planar devices
and the 5082-3141 is a passivated mesa device. All are in a
shunt configuration in hermetic stripline packages which are
suitable for Hi-Rei applications. These diodes are optimized
for good continuity of characteristic impedance which allows
a continuous transition when used in 50 ohm microstrip or
stripline circuits.
Maximum Ratings
Part No. 5062-
-3140
-3170
-3141
l.loW
O.75W
225W
50W
1!)OV
70V
Soldering Tempf,lrature
Notes:
1. Device properly mounted in sufficient heat sink at 25 C, derate linearly to zero at maximum operating temperature.
2. tp ~ II's, f ~ 10 GHz, Du ~ 0.001, Zo ~ 50 n, TA ~ 25C.
The 5082-3170 is a reverse polarity device with characteristics similar to the 5082-3140.
The 5082-3141 is recommended for applications requiring
fast switching or high frequency modulation of microwave
signals, or where the lowest bias current for maximum attenuation is required.
Mechanical specifications
Package Outline 60 is hermetically sealed and capable of
meeting the stringent requirements of space level high reliability testing. Both the package and lead materials are gold
plated Kovar.
240
Part
Maximum
Typical
CWPower
Minimum
Maximum
Insertion
Isolation
(dB)
loss
IdB)
Maximum
SWR
Reverse
R_very
Time
trr
Ins!
Typical Carrier
Lifetime
Swltohing
Capability
PA
Number
5082
Outline
3140
60
Anode
20
0.5
1.5
Ins)
400
3141
60
Cathode
20
1.0
1.5
10
15
13
3170
60
Cathode
20
0.5
1.5
400
30
Test
Conditions
(Note 3)
Heat
Sink
Package
1j::=100mA IF =0
IF .. 0
(Except
PIt\=lmW
Pjn= 1mW
l'
IF =2OmA
3141;
fF=20mA)
VR =10V
Recovery
to 90%
(W)
30
1j::=5OmA
IR = 250mA
Typical Parameters
1.4
1.2
/'
1.0
,.' / /
0.8
,;."
06
0.4
02
1.2
1.4
At.lDIO~
1.2
V
1/
30
........ .....
24
14
16
18
FREQUENCY IGHz)
10
12
14
16
18
" r--- ~1
26
J, r-.... .......
~~ f ' r-....
20
12
100,----,---,----,----,---,
22
10
32
28
~~
34
1.6
41~
,/o;,f!>' r-- -
FREQUENCY IGHz)
1.8
,/
18
2
10
12
FREQUENCY (GHz)
14
........
'"
16
241
100
18
Equivalent Circuits
Forward Bias(lsolation State)
Zo"'50n
Rp
Lp
Lp
r'" 1
R,
--,--
--1-
Lp
(pH)
Rp
Rs
(m
L,
(pH)
Q,
(m
(mm)
(mm)
3140,3170
3141
150
0.0
0.95
30
3.8
3.8
150
0.0
0.8
20
3.8
3.8
Lp
(pH)
Rp
R1
CT
{Km
L2
(pH)
R2
{m
(Km
(pF)
(mm)
{mml
1.2
16
0.0
0.20
5.3
5.3
""
0.4
0.14
4.4
4.4
3140,3170
30
0.0
3141
200
0.0
TIME (ns)
The total time it takes to switch the shunt diode from the
isolation state (forward bias) to the insertion loss state
(reverse bias) is shown in Figure 6. These curves are for
three forward bias conditions with the diode driven in each
case with three different reverse voltage pulses (VPR). The
total switching time for each case includes the delay time
(pulse initiation to 20 dB isolation) and transition time (20 dB
isolation to 0.9 dB isolation). Slightly faster switching times
may be realized by spiking the leading edge of the pulse or
using a lower impedance pulse driver.
The time it takes to switch the diode from zero or reverse bias
to a given isolation is less than the time from isolation to the
insertion loss case. For all cases of forward bias generated by
the pulse generator (positive pulse), the RF switching time
from the insertion loss state to the isolation state was less
than 2 nanoseconds. A more detailed treatise on switching
speed is published in AN929; Fast Switching PIN Diodes.
242
30
!
~
;::
. r;::I-:-.. ,. .
ffi
>
C.U.T.
1rl
a:
-l:>I-.....-"1-=-....50-n.. TO SCOPE
kn
iJj
ffi
25
20
'5
,.
G;
a:
'0
2.
30
243
r/i~ HEWLETT
~~ PACKARD
5082-3305
5082-3306
Features
NANOSECOND SWITCHING TIME
Typically Less than 5 ns
LOW RESIDUAL SERIES RESISTANCE
Less than 1 n
LOW DRIVE CURRENT REQUIRED
Less than 20 mA for 1 n Rs
HIGH POWER LIMITING CAPABILITY
50 W Peak Pulse Power
Outline 38 (50824305)
Description IApplications
The HP 5082-3305 and 5082-3306 are passivated silicon
PIN diodes of mesa construction. Precisely controlled
processing provides an exceptional combination of fast RF
switching and low residual series resistance.
These HP PIN diodes provide unique benefits in the high
isolation to insertion loss ratio afforded by the low residual
resistance at low bias currents and the ultra-fast recovery
realized through lower stored charge. Where low drive power
is desired these diodes provide excellent performance at very
low bias currents.
t+_:L.i:;_~ _;~---i----~.
HEAT SfNK
2,H {,Olt'l}
:--1TsWa"1
Oulline 31 (5082-3306)
PIMENStON-S IN MILL1METERS AND I ~NCHES),
Mechanical Specifications
Maximum Ratings
244
FAST SWITCHING/ATTENUATING
Electrical specifications at TA = 25C
Maximum
Part
Number
5082
Package
Outline
3305
38
3306
31
Minimum
Breakdown
Voltage
\faR (VI
Heat
Sink
cathode
Test
Conditions
Maximum
Maximum
Total
Seriel
Resistance
Capacitance
CT (pFI
Reverse
Recovery
Time
Rs(nl
trr (ns)
70
0.4
1.0
10.0
70
0.45
1.0
10.0
If'" 20mA
VR = 10V
VR = VBR, rneas.
f .. 1 MHz
t= 100 MHz
IR";;10/lA
VR '" 20V
IF =2OmA
90% Reooverv
Typical Parameters
0.2
30
"Co
""'z<I:
....
U
~
<I:
0.1
;::
20
>
c:
>
8
"'c:
"''"c:
"'>
"'c:
"z
0
;::
";;z
25
"':;;
10
20
15
10
Va = 2V
V~
SV
Va = lOY
30
10
30
1.2
FORWARD VOLTAGE (V)
245
Flin-
HEWLETT
~e. PACKARD
5082-3101
5082-3102
5082-3201
5082-3202
5082-3303
5082-3304
PIN DIODES
FOR RF POWER
SWITCHING/
ATTENUATION
Features
HIGH ISOLATION
Greater Than 25 dB
LOW INSERTION LOSS
HIGH CONTROL SIGNAL DYNAMIC RANGE
10,000: 1 RF Resistance Change
LOW HARMONIC DISTORTION LIFETIME
Greater Than 100 ns
Outline 38
Description IApplications
1 I
-~'W{1
SOOnlS}
HP 5082-3101/02,5082-3201/02,5082-3303/04 PIN
diodes are silicon devices manufactured using modern processing techniques to provide optimum characteristics for RF
switching, signal conditioning and control. These devices are
of planar passivated design. Both anode and cathode heat
sink models are available.
16;'0641
152[060;
t63L)64J
f.52t'66"Gl
t-
2,a9to94~
l.OOt,03Zl-
O,64/,{t25}
L
& 91,!.2:j}
5.1
'I""')
MAK
HE ATS1NI(
f+-~t~~~;Outline 31
Mechanical Specifications
Maximum Ratings
RF POWER SWITCHING/ATTENUATING
Electrical Specifications at TA=25C
Part
Number
5082-
Package
Outline
Minimum
Breakdown
Voltage
VSR (V)
Heat
Sink
Maximum
Residual
Series
Resistance
RS(U)
Maximum
Total
Capacitance
Cr (pF)
Typical
Reverse
Recovery
Time
trr (os)
Minimum
Carrier
Lifetime
r (ns)
TypicalCW
Power
Handling
Capability
PA (WI
3101
38
200
0.32
1.2
100
100
40
3102
38
300
0.30
0.8
100
100
60
3201
31
3202
31
3303
31
3304
31
Anode
Cathode
Test
Conditions
200
0.35
1.2
100
100
120
300
0.32
0.8
100
100
180
200
0.40
1.2
100
100
120
300
0.32
0.8
100
100
180
VR =VSR, meas.
IR '" 10llA
VR=50V,f=lMHz
IF=100mA IF = SOmA
IF =20mA, VR"'10V Series' Switch
f=100MHz IR = 250mA 90% Recovery
in 50! System
Typical Parameters
(
'O'='O,J.l.lliJlOL,...L.l.LllJJl-Llllilll-L.Llli""",L.
O ..LJ.J.WjjJ,oo
VS.
Forward
o.3,-------,-------,
--i"'1MHt
Lp
Rs
cj
c p " Package Capacitance
Inductance
oJ\
Rj
Cp
--~-"----I-----I
0~-----~,LO------~20
REVERSE VOLTAGE (V)
247
Flio-
HIGH
HEWLETT
50821001
50821002
50821006
CONDUCT ANCE
DIODES
~~ PACKARD
Features
!+----I-
--.--t--
FAST SWITCHING
LOW CAPACITANCE
HIGH CURRENT CAPABILITY
25,4 (1.00)
MIN,
Description / Applications
ml~
CATHooe
25.4 (1,00)
MIN.
...--t..-*_
Maximum Ratings
11!!&!l.~
-I I- OM (0.018)
Outline 11
Mechanical specifications
device Median
hours,
5082
Minimum
Breakdown
Voltage
VeR{V)
Minimum
Forward
Current
IF (mA)
Minimum
Forward
Current
IF (rnA)
Maximum
Reverse
Leakage
Current
IR (nA)
Maximum
Reverse
Leakage
Current
IR(/lAJ
Maximum
Total
Capacitance
Co (pF)
Maximum
Reverse
Recovery
Time
fft (ns)
Maximum
Turn-On
Time
ton (ns)
1001
35
150
500
200
200
2.5
35
300
800
200
200
1.5
3,0
1,5
1002
2,0
2,5
1006
50
150
500
200
200
1.1
1,5
Test
Conditions
IR=10MA
VF=l,OV
VF=lAV
\2J
\21
J3J
1500 0 3 !
VR=OV,
1=1.0 MHz
iFigure 9:
,Figure 10\
248
1000
:<
100
10
Cl
1.0
a:
a:
OJ
u
a:
r--
;;II
t,
f(
.01
.2
a:
a:
OJ
u
If
Cl
a:
;,
a:
"
.6
1.0
.8
,vi
/
/
i
7i
.4
/~
100
f-
/1
";,a:
:<
Vi ~
r--i6V /
"1
1000
io"""
VI
S
f-
1.2
I--,q
[,,0/ v
~1
-1 ~7
J..'C
::
1.0
.1
.01
1.4
10
I
.2
.6
.4
.8
10,000
4000
100
>-
"a:w
a:
10
OJ
u
Cl
a:
1>\
1.0
.1
.01
0.5
1.0
1.5
2.0
400
u
w
200
G:;
a:
2.5
1.4
V
/
L ./
1000
"a:a:w
'"ffi
2000
OJ
'""'?-
"
a:
;,
1.2
1000
:<
1.0
II' <><>""-
-.,<J>.'V"'-;:; ,,:'9
:2 I,li;!V
/'
/
100
40
I
I
75
100
20
3.0
3.5
10
4.0
25
50
125
150
175
1000
0.6
400
0.5
1
f-
200
",{)S7..~ . . . . . r
100
a:
a:
OJ
u
w
'"ffi
G:;
a:
40
0.4
,.......t;:::. V
.......... r-
10
'\'
I\.
0.3
~.-
20
1\
"\
0.2
i-""'<;<lS'I..\OoU
4.0
i\.
o. 1
2.0
1.0
5.0
10
15
20
25
30
o
o
35
25
50
75
100
125
150
175
200
249
3.5
\
3.0
2.5
u
z
<>:
2.0
e:;
:l;:
1,5
r-"
i'-........
50811002
l-
<>:
1.0
I!
5082100L.
6082~1006
I'-0.5
10
15
20
25
30
35
Characteristics.
TEST FIXTURE
SIGNAL
GENERATOR
r--
POWER
AMPLIFIER
r---:-
HP 6lllIC
ATTENUATOR
WEINSCHEL
r--
10db
lOW
r---
I--
r--
50 U
t+
VTVM
HP411A
COAXIAL
FED.THRU
PROSE
I\
5.0K
VTVM
20pf
~IODE UNDER
nST
Figure 8. Test Circuit for Measuring the Rectification Efficiency. Signal source is adjusted to 100 MHz and 2V RMS as read
on the 411A. The rectification efficiency calculated from the DC output voltage by RE = Vocl2.83 is typically 65% for all
devices.
Gr
50n
~:
O.U.T.
1.0~F
1--.---0---1)1---<>--..---0 TO SCOPE
1.0kn
~~
't
I,
Figure 9. Test Circuit for Measuring Reverse Recovery Time. IF is set at 20 mA and VR at 2V.
'
'-r
L
9I
ATTENUATOR
PULSE
GENERATOR
20 dB
TRIGGER
O.U.T.
'I
$AMPUNG
$C01'S
Figure 10. Test Circuit for Measuring Turn-On Time. IF is adjusted for 10 mA after applying the step voltage. tON is measured
as the time required to reach 0,9 IF from initial application of the step voltage. For high excitation levels the tON value is
significantly lower than the value specified, i.e., at 100 mA tON is typically less than 1.0 ns.
250
251
_ _ _ _ _
_ _ _ _ _ _ _ H _ _ . . . . . . . "
,~,
...
_.,
-.~.-
, - . -
,.--'"
- --- ...- . . - _ . .-
FliOW
HIGH RELIABILITY
BEAM LEAD
PIN DIODES
HEWLETT
~~ PACKARD
TXVP-4001
TXVP-40S0
(Generic HPND-4001/-4050)
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned After MIL-S-19500
LOW SERIES RESISTANCE
1.3 n Typical
LOW CAPACITANCE
0.07 pF Typical
1:t~g:3
====:::;=.,........==;:===
___
1 _L.
\ ___--'7
--t
FAST SWITCHING
2 ns Typical
-----t-
RUGGED CONSTRUCTION
4 Grams Minimum Lead Pull
60 (2AI
4O"(l:m
OutUne21
Description/Applications
Maximum Ratings
Bonding Techniques
Thermocompression bonding is recommended but welding, thermosonic bonding or conductive epoxy can also be
used. For additional information, see Application Note 974,
"Die Attach and Bonding Techniques for Diodes and
Transistors," or Application Note 979, "The Handling and
Bonding of Beam Lead Devices Made Easy".
Breakdown
Voltage
V8R(V)
Minority Canter
Re_ "'-"ery
Capacitance
Lifetime
Or(PF)
T(M)
Time
,"(M)
Ser1e8
R.....nce
Rs(O)
Typ.
Max.
Rewrse
Current
Forward
",(nA)
Voltage
VF(V)
Min.
50
Typ.
Typ.
Max.
TyPo
Typ.
Max.
Max.
TXVP-4001
80
1.8
2.2
0.07'
O,OS'
30
100"
0.97
TXVP-4050
30
40
1.3
1.7
0.12
0.15
25
100
0.98
IF=10mA
iR=8mA
IF"'10mA
VA=10V
. VR=10V
"H2samples
only
IF=50mA
Test
,COnditions
VR= VBR
Measure
iRS 10 ItA
IF=10mA
ft 100 MHt
VR-20V
'VR=3OV
f=lMHz
252
;'
"
,~,
"'-
,/
Method
Condition'
24 Hours at 300" C
See Table 1
HP A-5956-0112-72 111
MILSTD-7S0
Method
201iH!11
1051
6. Non-Operating Life
7. High Temperature Reverse Bias
8. Second Interim Electrical Test (Read,
Record and Deltal
9. Operating Life
10. Final Electrical Test IRead.
Record and Deltal
LTPD
",
r= 1
20
Conditions
See Tabla I
1032
1038
240 hoursVR
10
1038
10
Typical Parameters
0.30
0.20
0.10
100
FORWARD VOLTAGE (VOLTS)
253
t/9N{)-4Q5(l
""-
HPN:D~4001
10
20
30
FliO'l
HIGH RELIABILITY
.BEAM LEAD
PIN DIODE
HEWLETT
~e.I PACKARD
TXVP-400S
(Generic HPND-400SJ
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned After MIL-S-19500
HIGH BREAKDOWN VOLTAGE
120V Typical
LOW CAPACITANCE
0.017 pF Typical
LOW RESISTANCE
4.70 Typical
RUGGED CONSTRUCTION
4 Grams Minimum Lead Pull
Outline 21
NITRIDE PASSIVATED.
Maximum Ratings
Operating Temperature .... '.......... -65C to +175C
Storage Temperature ................ -65C to +200C
Power Dissipation at 25C ..................... 250 mW
(Derate linearly to zero at 175 C)
Minimum Lead Strength ...... 4 grams pull on either lead
Description/Applications
The TXVP-4005 planar beam lead PIN diodes are constructed to offer exceptional lead strength while achieving
excellent electrical performance at microwave frequencies.
The TXVP-4005 beam lead PIN diode is designed for use
in stripline or microstrip circuits. Applications include
switching, attenuating, phase shifting, limiting and modulating at microwave frequencies. The extremely low capacitance of the TXVP-4005 makes it ideal for circuits
requiring high isolation in a series diode configuration.
Bonding Techniques
Thermocompression bonding is recommended but welding, thermosonic bonding or conductive epoxy can also be
used. For additional information, see Application Note 974,
"Die Attach and Bonding Techniques for Diodes and
Transistors", or Application Note 979, "The Handling and
Bonding of Beam Lead Devices Made Easy".
Part Number
Breakdown
Voltage
VBR (V)
Series
Resistance
Rs(O)
TXVP-4oo5
Min.j Typ.
Typ.l Max.
100
Test
Conditions
100
IR=10!,A
4.7
6.5
IF=20 mA
1=100 MHz
Capacitance
CT (pF)
Minority
carrier
Ufet/me
T (ns)
Typ.l Max.
Typ.
I Max.
I 0.02
100
0.017
VR'" lOV
f= 10GHz
254
150
IF=10 mA
IfI=6mA
Reverse
Recovery
Time
trr (ns)
Forward
Voltage
VF(V)
Reverse
Current
IRInA)
Typ.1 Max.
Max.
Max.
1.0
100
20
35
IF=20 mA
IF = 10 rnA
H2Sampies
VR'" 10V
90% Recovery
Only
VR=30V
Method
Conditions
24 HOUfS at 300 0 C
Per Table I
HP A-5956-0112-72111
Tesl/lnspection
1.Beam Pull Test
2011Hi1i
LTPO
Conditions
4 gram min., n
11, r= 1
20
See Table I
1051
6. Non-Operating Life
7. High Temperature Reverse Bias
8. Second Interim Electrical Test IRead
1032
1038
65
=150C
10
and Record i)
9. Operating Lite
1038
10
(
Typical Parameters
,OO.----,.-----r-------,
40
ISOLATION AT:
-JOV,
-10V"
30
ov ...... ,
20
"'\,
.... .................
" '\,
.... '0:::;
....
lOrnA
~k
~
"'rnA
,OJ!;-5---f.:-L--.""'5:----:'-:::.00:---:;-!,1.25
FORWARD VOLTAGE (V)
'O~,~~~~~~~~~'O~~~,OO
FORWARD BIAS CURRENT (mAl
10,
SOmA
'0
FREQUENCY (GHz)
Characteristics.
Configuration 1Zo
255
= 50 llI.
18
rhn.~ HEWLETT
~~ PACKARD
JAN 1N571 9
JANTX 1N571 9
Features
QUALITY PERFORMANCE TESTED
Proven Reliability
0.41
!:.ol6)
I 1---L
0.36('014)~.
O-'-T
25.4 (1.00)
Description / Applications
The JAN Series 1N5719 is a planar passivated silicon PIN
diode designed for use in RF switching circuits. These
devices are well suited for variable attenuator, AGC,
modulator, limiter, and phase shifter applications that
require the high reliability of a JAN/JANTX device.
4.321.170)
CATHODE"
~r
25.4 0.001
o_~~
Range ................
9
"'-_..
. ...... 65Cto+150C
Oulline 15
Part Number
1N5719
Minimum
Breakdown
Voltage!1]
VeR (V)
Maximum
Forward
Voltage
VF (V)
Maximum
Reverse
Current
IRl (nA)
150
1.0
250
Test
Conditions
fR=10,uA
IF= 100 mA
VR
= 100V
Maximum
Reverse
Current
IR2 (MA)
Maximum
Capacitance
CVR (pF)
Maximum
Series
Resistance
Rs (n)
Minimum
Effective
Carrier
Lifetime
T (ns)
15
0.30
1.25
100
VR = 100V
TA'" 150C
VR 100V
f= 1 MHz
IF= 100 mA
f=100MHz
IF =50 mA
iR=250 rnA
Note 1:
Tested per MIL-STD750. Method 4021.
256
JAN 1 N5719: Samples of each lot are subjected to Group A inspection for parameters listed in Table I, and to Group Band
Group C tests listed below. All tests are to the conditions and limits specified by MIL-S-19500/443.
JANTX 1 N5719: Devices undergo 100% screening tests as listed below to the conditions and limits specified by MIL-S19500/443*. A sample of the JANTX lot is then subjected to Group A, Group B, and Group Ctests asfortheJAN 1 N5719 above.
* JANTX devices have gold plated leads.
Screening TeSVlnspectlon
1. High Temperature Storage (Stabilization Bakel
Conditions/Comments
1032
1051
10 Cycles, Condition F
2006
20 Kg., Y1 axis
4. HermetiCity Tests
Fine Leak
Gross Leak
1071
Condition H
Condition C or E
See Table I
6. Burn-in
1038
10%P DA
MIL-STO150
Method
Conditions/Comments
2071
Subgroup 2
DC Electrical Tests at 25 C
Subgroup 3
Dynamic Electrical Tests at 25 C
Subgroup 4
High Temperature Operation ITA"" 1500
Reverse CurrenlllR2i
LTPO
r per Table
10
4016
10
Per Table I
257
Test/Inspection
MIL-STD750
Method
Conditions/Comments
Subgroup 1
Physical Dimensions
Subgroup 2
Solderability
Thermal Shock (Temperature Cycling)
Thermal Shock (Glass Strain)
Terminal Strength (Tension)
Hermetic Seal
Moisture Resistance
End Points:
Forward Voltage (VF)
Reverse Current UR1)
Subgroup 3
Shock
Vibration Variable Frequency
Constant Acceleration
End Points:
Forward Voltage (VF)
Reverse Current (tAl I
Subgroup 4
Terminal Strength; Lead Fatigue
15
2066
10
2026
1051
1056
2036
1071
1021
4011
4011
Per Table I
Per Table I
2016
2056
2006
4011
4011
Per Table I
Per Table I
2036
1031
TA"" 150C,Ill
4011
4016
Per Table I
Per Table I
..lIR '" +25% of initial value
or +50 nA whichever is greater
1026
4011
4016
Per Table I
Per Table I
..l.IFl e +25% of initial value
or +50 nA whichever is greater
10
10
SubgroupS
High Temperature Life (Non-Operating)
End POints:
Forward VOltage iVFI
Reverse Current (lA1)
Drift (..l.IA1)
Subgroup 6
Steady State 0 perating Life
End Points:
Forward Voltage (VF)
Reverse Current ((Rl)
Drift (';;IFlll
LTPD
A "'3
h"'3
1. t ~ 1000 hours every 6 months to qualify product, t ~ 340 hours on each lot thereafter.
258
Testflnspection
Conditions/Comments
Subgroup 1
Barometric Pressure, Reduced
Measurements During Test:
Reverse Current
1001
Pressure: 15 mm Hg; t
4016
Subgroup 2
Salt Atmosphere ICorrosion)
1041
= 1 min,
LTPO
20
20
Subgroup 3
Resistance to Solvents
20
Subgroup 4
Thermal Shock (Temperature CYCling)
End Points:
Forward Voltage IVF)
Reverse Current (JRll
1051
4011
4016
Per Table I
PerTable I
SubgroupS
20
4011
4021
<1,15Vatlf=100mA
Per Table t
Typical Parameters
U
Z
in
iii
~
:;0
1.2
100
FORWARD BIAS CURRENT (mA)
259
Flin-
HIGH RELIABILITY
PIN DIODES FOR
RF SWITCHING AND
A TTENUA TING
HEWLETT
~~ PACKARD
rX-300112
TXB-300112
TXV-300112
TXVB-300112
TX-3039
TXB-3039
TXV-3039
TXVB-303!1
TX-3077
TXB-3077
TXV-3077
TXVB-3077
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned After MIL-S-19500
LOW HARMONIC DISTORTION
LARGE DYNAMIC RANGE
LOW SERIES RESISTANCE
LOW CAPACITANCE
CATHODE",
"
LOW TEMPERATURE
COEFFICIENT
Typically Less Than 20%
Resistance Change from
25C to 100C
DIMENSIONS IN
MILLIMETERS ArjD (INCHES)
Outline 16
Description / Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters.
Maximum Ratings
Junction Operating and Storage
Temperature Range
............... -65Cto+150C
Minimum
Effective
Carrier
Lifetime
T (ns)
100
100
100
100
1.0
100
100
100
100
1.0
1.0
100
IF=20 rnA
VA"" 10 V
90% Recovery
VA=100V
5082-3002
0.20
5082-3001
0.25
200
5082-3039
5082-3077
0.25
0.30
150
200
1.25
1.5
100
Test
Conditions
VR=50 V
f= 1 MHz
VR = VSA
Measure
IR= 10llA
IF= 100 mA
f= 100 MHz
IF ""50 mA
IF\= 250 rnA
Number
1.0
1.0
260
Typical
Reverse
Recovery Time
Maximum
Reverse
Leakage
Current
fR (nA)
100
Maximum
Forward
Voltage
VF(V)
1.0
Minimum
Breakdown
Voltage
VBIl (V)
300
Part
Maximum
Total
Capacitance
CT (pF)
trdns)
100
PartNumbar
PreliJt
From these three basic levels, four combinations are available. Please refer to Table II as a guide.
Scraanlng l",el
5082-
Commercial
TX-
TXB-
TXV-
TXVB-
IV!
a (per
MIl-STD-750 Method
2074
1032
10tH
Condition F, 10 cycles
4. Constant Acceleration
2006
20 Kg., Yl axis
5. Hermeticity Tests
1071
Fine Leak
Gross Leak
Condition H
Condition CorE
1038
8. Burn-in
c.
CondItiOns/Comments'
1038
(PDA= 10%)
greater.
TABLEN.GROUPAPROGRAM
TesVlnspeclion
Subgroup 1
Visual and Mechanical
Subgroup 2
DC Electrical Tests at 25" C
Subgroup 3
Dynamic Electrical Tests at 25" C
MIL-STD-750
Method
Conditions/Comments
LTPD
2071
261
Test/Inspection
Subgroup 1
Solderability
Resistance to Solvents
Subgroup 2
Thermal Shock (Temperature Cycling)
Hermetic Seal
Fine Leak
Gross Leak
D.C, Electrical Tests (IR and Vpl
Subgroup 3
Steady State Operating Ule
Conditions/Comments
2026
1022
LTPO
15
1051
1071
10
Condition H
Condition C or E
See Table I
1027
t = 340 hours, T A = 25 C,
PFM = 200 mW, 1= 60 Hz,
VRM '" 80% of rated VBR
2075
20
2037
1032
See Table I
100~-------r--------OT-.r-,,~
10,000 ,.-----------,----,-----,------,
1000
0.2
0.4
0.6
1.0
0.8
1,2
o
w
:iE
;::
,.
ffi
>
0:
W
'"ffi
ii;
0:
10L-__
__- L__
10
____
__- L_ _
20
30
262
FliOW
HIGH RELIABILITY
PIN DIODES
HEWLETT
a!~ PACKARD
TX-3042
TXB-3042
TXV-3042
TXVB-3042
TX-3043
TXB-3043
TXV-3043
TXVB-3043
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
FAST SWITCHING
10 ns Maximum
LOW SERIES RESISTANCE
1_5!1 Maximum
LOW CAPACITANCE
0.4 pF Maximum
LOW DRIVE CURRENT REQUIRED
Less than 20 mA for 1!1 Rs
Description/Applications
The TX-3042 and -3043 are oxide passivated silicon PIN
diodes of mesa construction. Precisely controlled processing provides an exceptional combination of fast RF
switching and low residual series resistance.
These hermetically sealed. glass packaged PIN diodes are
intended for controlling and processing microwave signals
through Ku band. Typical applications include single and
multi-throw switches, pulse modulators, amplitude
modulators, phase shifters, TR switches and duplexers.
Maximum Ratings
Outline 15
Maximum
Forward
Voltage
VF (V)
Maximum
Reverse
Leakage
Current
IR (ns)
15
100
15
10
100
IF=50 mA
iR =250 rnA
iF=20mA
VR = 10 V
90% Recovery
iF=100 rnA
VR=80%
Rated VSR
Minimum
Breakdown
Voltage
V eR (V)
Maximum
Total
Capacitance
CT-20 (pF)
Maximum
Residual
Series
ReSistance
Rs (n)
Typical
Effective
Carrier
Lifetime
.,. (ns)
5082-3042
70
0.4
1.0
5082-3043
50
0.4
1.5
Test
Conditions
VR=VSR
Measure
IR:;; 10 p.A.
VR=20 V
f= 1 MHz
IF= 20 rnA
f = 100 MHz
Part
Number
263
Screening Level
Part Number
From these three basic levels, four combinations are available. Please refer to Table II as a guide.
5082-3042
5082-3043
Commercial
TX-3042
TX-3043
TXB-3042
TXB-3043
TXV-3042
TXV-3043
TXVEl-3042
TXVB-3043
Screening Te&tllnspectlon
MILSTD-7oo Method
2074
CondillOnslComments
1032
t= 48 hours, TA =: 150"C
1051
Condition F, 10 Cycles
20 Kg., Y1 axis
4. Constant Acceleration
2006
5. Hermeticlty (SealTestsl
Fine Leak
Gross!.eak
1071
6. HTRB
1038
ConditionH
Condition C or E
1038
Subgroup 2
DC Electrical Tests at 25" C
Subgroup 3
Oynamic Electrical Tests at 25' C
MIL-$TD-750
Method
Conditions/Comments
2071
LTPD
5
264
. j
Testllnspection
Subgroup 1
Solderability
Resistance to solvents
MIL-$TD-750
Method
CondltiQl1S/Comments
2026
1022
LTPD
15
$ubgroup2
Thermal Shock (Temperature Cycling)
Hermetic Seal
Fine Leak
Gross Leak
DC Electrical Tests (IR and VF)
Subgroup 3
Steady State Operating Ufe
1051
1071
Subgroup 5
High Temperature Ufe
(Non-Operating)
DC Electrical Tests (lR and VF)
10
ConditionH
Condition C or E
See Table I.
1027
2075
2037
1032
20
t = 340 hours, TA = 150 C
See Table I.
('
265
Flin-
HIGH RELIABILITY
PIN ATTENUATOR
DIODES
HEWLETT
~~ PACKARD
TX-3080
TX8-3080
TXV-3080
TXV8-3080
(Generic 5082-3080>
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
0.41 (0.016'----1
[36~
LOW DISTORTION
l---
II
~J:
tl
4.32 (0.110)
Description/Applications
CATHOOE
~~
DIMENSIONS IN MILLIMETERS (INCHES).
Maximum Ratings
Operating and Storage Temperature
Range ............................ -65 C to +150 C
Reverse Voltage (Working) ................ 100 V(peak)
Power Dissipation at TeASE = 25 C ........... 250 mW
(Derate linearly to zero at 150C)
Package 15 Maximum Solder Temperature ...... 230 C
for 5 seconds
Outline 15
Part
Number
-3080
Test
Condition
Minimum
Maximum
Total
Breakdown
Voltage
Capacitance
VSfI (V)
Cr (pF)
100
0.4
VR"'VSR
Measure
iR$;10 !'A
VR"'50 V
f= 1 MHz
Typical
Effective
Minority
Carrier
Lifetime
T (ns)
Maximum
Residual
Series
Resistance
Rs (ll)
Minimum
High
Resistance
Limit
RM (Il)
Maximum
Low
Resistance
Limit
RL (n)
Maximum
Forward
Voltage
VF (V)
1300
2.5
1000
266
IF=20 mA iF =30 mA
f=100 MHz
Maximum
Reverse
Leakage
Current
IfI CnA)
100
VR=50 V
(
\
Part Number
Screening Level
5082-3080
CommerCial
TX-3080
TXB-3080
TXV-3080
TXVB-3080
Screening Test/Inspection
Conditions/Comments
2074
1032
1051
t - 48 hours, TA -1500
Condition F, 10 Cycles
4. Constant Acceleration
2006
20 Kg., Y1 axis
5. Hermeticlty Tests
Fine Leak
Gross Leak
1071
1038
ConditionH
Condition C or E
t- 48 houra, TA = 150"C
VR"'80 V
Sea Table I
8. Burn-In
Test/Inspection
SUbgroup 1
Visual and Mechanical
Subgroup 2
DC Electrical Tests at 25" C
Subgroup 3
Dynamic Electrical Tests at 25" C
MIL-STD-7SO
Conditions/Comments
Method
2071
LTPD
267
MILSTD-750
Test/Inspection
Subgroup 1
Solderability
Resistance to solvents
Subgroup 2
Thermal Shock (Temperature Cycling)
Hermetic seal
Fine Leak
Gross Leak
DC Electrical Tests (IF! and Vp)
Subgroup 3
Steady State Operating Life
Method
Conditions/Comments
15
2026
1022
1051
1071
Condition F1
SubgroupS
High Temperature Life
(Non-Operating)
DC Electrical Tests (11'1 and Vp)
(25
cycles)
10
ConditionH
Condition C or E
See Table J.
t"" 340 hours. TA = 25C,
PFM=200 mW, f=80 Hz. VRM=80 V
$eaTable I.
1027
LTPD
2075
20
2037
1032
268
F/iOi
HEWLETT
~~ PACKARD
HIGH RELIABILITY
UHF /VHF SWITCHING
PIN DIODES
TX-3188
TX-3168
TXB-3168 TXB-3188
TXV-3168 TXV-3188
TXVB-3168 TXVB-3188
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
0.41 (0.016)----1
~iO.oi4)
r---
1I
~T
LOW CAPACITANCE
4-
HERMETIC PACKAGE
Description/Applications
The TX-3168 and -3188 are passivated silicon PIN diodes
designed for optimal VHF/UHF switching characteristics.
These devices switch rapidly between high and low values
of RF impedance as a function of DC bias current.
CATHODE
"'I--"~r
~-=c
Maximum Ratings
Operating and Storage Temperature
Range ............................ -65 C to +150 C
Reverse Voltage (Working) ....................... 35 V
Power Dissipation at TeASE = 25 C ........... 250 mW
(Derate linearly to zero at 150 C)
Package 15 Maximum Solder Temperature ...... 230C
for 5 seconds
Outline 15
Typical
Effecllve
Carrier
Lifetime
T (os)
Typical
Reverse
Recovery
Time
Ifr (ns)
Maximum
Forward
Voltage
VF (V)
2.0
0.5
40
12
100
1.0
0.6
40
12
100
VR"'20V
f= 1 MHz
IF=10 rnA
f= 100 MHz
IF= 50 rnA
IR=250 rnA
IF=20 rnA
VR=10V
90% recovery
VR=20 V
Minimum
Breakdown
VoHage
VBR (V)
Maximum
Total
Capacitance
Cr (pF)
5082-3168
35
5082-3188
35
Test
Conditions
IR"" 10 I'A
Part
Number
269
Maximum
Reverse
Current
IR (nA)
Screening Level
Part Number
50823168
5082-3188
Commercial
TX3168
TX-3188
TXB-3168
TXB-3188
TXV-3l68
TXV-3188
TXVB3168
TXV83188
Screening Tesl/lnspection
Conditions/Comments
2074
~
1032
1051
2006
Condition P, 10 Cycles
4. Constant Acceleration
5. Hermeticity
Fine Leak
Gross Leak
1071
1038
1038
48 hours, T A = 1500 C
20 Kg., Y1 axis.
Condition H
Condition C or E
t ~ 48 hours, T A = 1500 C,
VR ~ 28 Volts Max.
See Table I
Subgroup 2
DC Electrical Tests at 25' C
Subgroup 3
Dynamic Electrical Tesls at 25C
MIL-STO-750
Method
Conditions/Comments
2071
LTPD
270
MIL-$TD-750
Method
Conditions/COmments
2026
1022
15
1051
1071
10
CondilionH
Condition C or E
See Table I.
SubgroupS
Steady State Operating Life
LTPD
1027
Subgroup 4
Decap Internal Visual
(Design Verification)
Die Shear
SubgroupS
High Temperature life
(Non-Operating)
DC Electrical Tests (lR and VF)
2075
2037
20
1032
271
rli~ HEWLETT
~~ PACKARD
TX-3141
TXB-3141
TXV-3141
TXVB-3141
(Generic 5082-3141)
Features
QUALITY PERFORMANCE TESTED
Test Program Patterned after MIL-S-19500
BROADBAND OPERATION
HF through X-band
LOW INSERTION LOSS
Less than 1.0 dB to 8 GHz
HIGH ISOLATION
Greater than 20 dB to 8 GHz
FAST SWITCHING/MODULATING
5 ns Typical
LOW DRIVE CURRENT REQUIRED
Less than 20 mA for 20 dB Isolation
Outline 60
Maximum Ratings
Description/Applications
Part
Number
5082-3141
Test
Conditions
Heat
Sink
Cathode
Minimum
Isolation (dB)
Maximum
Insertion
Loss (dB)
Maximum
SWR
Maximum
Reverse
Typical
Recovery
Carrier
Time (trr) (ns) Lifetime (ns)
Forward
Voltage
VF(V)
Reverse
Current
IR (nA)
20
1.0
1.5:1
10
15
1.0
100
IF =20 mA
f= 8 GHz
IF =0
PIN=l mW
1=8 GHz
IF=O
PIN =1 mW
f~8 GHz
IF 20mA
VR = 10 V
Recovery
to 90%
IF =50 mA
IR= 250 mA
IF=50 mA
VR =50V
272
Part Number
5082-3141
TX-3141
From these three basIc levels, four combinations are available. Please refer to Table II as a guide.
Screening Level
Commercial
100% Screen (per Table III and IV)
TXB-3141
TXV-3141
TXV8-3141
Screening Test/Inspection
1. Internal Visual (As required by Table III
2074
Conditions/Comments
1032
1051
Condition F, 10 Cycles
4. Constant Acceleration
2006
20 Kg., Y, axis
5. Hermeticity Tests
1071
Condition H
Condition C or E
Fine Leak
Gross Leak
6. High Temperature Reverse Bias (HTRB)
1038
1038
See Table I
B. Burn-In
(
TABLE IV. GROUP A PROGRAM
Test/Inspection
Subgroup 1
Visual and Mechanical
Subgroup 2
DC Electrical Tests at 25 C
Subgroup 3
Dynamic Electrical Tests at 25 C
MIL-STD-750
Method
Conditions/Comments
2071
LTPD
273
Test/Inspection
SUbgroup 1
Solderability
Resistance to solvents
MIL-STD750
Method
Condltlons/Commeots
2026
LTPD
15
1022
Subgroup 2
'Thermal Shock (Temperature Cycling)
Hermetic Seal
Fine Leak
Gross Leak
DC Electrical Tests OR and VF)
Subgroup 3
Steady State Operating Ufe
1051
1071
10
Condition H
Condition Cor E
See Table L
1027
t = 340 hours, T A = 25 C,
PFM = 200 mW, VRM '" 56 V
$eeTable L
Subgroup 4
Decap Internal Visual
(Design Verification)
DteShear
2075
2037
20
SubgroupS
High Temperature Life
INon-Operating)
DC Electrical Tests ItR and VF)
1032
274
275
~------------
----
------
Fli;'
HEWLETT
a!~ PACKARD
RELIABILITY BULLETIN
BEAM LEAD DIODES
Conclusion
Hewlett-Packard's beam lead diodes have successfully
passed stringent environmental testing. Therefore, it is
recommended that Hewlett-Packard beam lead diodes be
used in military and space applications without the necessity
of hermetically sealed packaging.
General
For applications requiring component reliability estimation,
Hewlett-Packard provides reliability data for all families of
devices. Data is compiled from reliability tests run to demonstrate that a product meets the specified design criteria. All
Schottky and PIN beam lead families have fulfilled the standard requirements of reliabililty qualification, and the results of
these tests are available upon request from Hewlett-Packard.
SINGLE
Program Description
The purpose of this program is to qualify all beam lead
diodes for operation in extreme environmental conditions
which may be encountered during military and space
operations.
The following test sequence has been designed to assess the
endurance of beam lead diodes through relevant environmental stresses such as heat and humidity. To qualify a device as
hermetic, the conventional procedure is to perform. dyepenetrant and Radiflo tests. However, because of the absence
of an enclosed cavity in the unique design of the beam lead
diode, these tests are not directly applicable. Therefore, this
program utilizes reliability tests such as moisture resistance,
salt atmosphere, and immersion to verify that the passivation
layer on the beam lead acts as a seal to protect the active
area of the diode,
PAIR
Typical Beam Lead Outlines
HPND-4001
HPND-4005
HPND-4050
276
- - - - - --_._---
Test sequence
Test
Test Condltlons
MIL-STD-750
1021
Temperature Cycling
1051
Constant Acceleration
2006
1041
35 fog, 24 hours
Salt Atmosphere!21
Salt Water Immel'$lonl2,
(MfL-sTD-883B,
M1oo2Sl
LTPD
7
10
10
Notes:
1. The sequence of moisture resistance and temperature cycling followed by constant acceleration assures a thorough evaluation of
the effect of exposure to high humidity and heat conditions. End pOints were taken after each test.
2. End pOints were: Visual at 100X magnification and D.C. testing to MIL-STD-19500.
Results
As demonstrated by these tests, Hewlett-Packard's beam lead
layer acts as a sealant and provides immunity from contaminants which could lead to IR drift. Conductive particle
protection is provided by a layer of polyimide, which also
functions as scratch protection. Therefore, it is recommended
that Hewlett-Packard beam lead diodes be used in military
and space applications without the necessity of hermetically
sealed packaging.
277
r/iOW
RELIABILITY DATA
BEAM LEAD
PIN DIODES
HEWLETT
~e.4I PACKARD
HPND4005
Description
For applications requiring component reliability estimation,
Hewlett-Packard provides reliability data for all families of
devices. Data is initially compiled from reliability tests run
prior to market introduction to demonstrate that a product
meets design criteria. Additional tests are run periodically.
The data on this sheet represents the latest review of
accumulated test results.
Applications
This information represents the capabilities of the generic
device. Failure rates and MTTF values presented here are
achievable with normal MIL-S-19500 TX level screening.
Reliability can only be guaranteed by testing specified lots
of devices, under specified conditions, with specified L TPD
levels.
400
300
........ r--.
EA = 1.7
r-r-.
;>
'v
r-r--.
200
........ 1"'-
w'
a:
::>
t-
t"---I"'-
"~
~
t2
>=
u
2
100
;;
50
102
103
105
104
la'
la'
108
MTTF (HRS.I
Test
Test Conditions
2.0
2.0
278
Environmental
//
Test
Temperature Cyc1ing
MIL-STD-750
Reference
1051.1
Cond, B
Thermal Shock
1056.1
Soldering Heat
2031
Shock
Vibration Fatigue.
2016.1
2046
Tellt Conditions
10 cycles from -65" C to +200 C. 30 min. at extremes, 5 min.
transfer
LTPD
10 seconds at 200C
15
(~
279
Fli;'
1N5767
50823080
50823168
50823188
RELIABILITY DATA
PIN DIODES
HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation,
Hewlett-Packard provides reliability data for all families of
devices. Data is initially compiled from reliability tests run
prior to market introduction to demonstrate that a product
meets design criteria. Additional tests are run periodically.
The data on this sheet represents the latest review of accumulated test results.
Applications
This information represents the capabilities of the generic
device. Failure rates and MTTF values presented here are
achievable with normaIMIL-S-19500 TX level screening.
Reliability can only be guaranteed by testing specified lots of
devices, under specified conditions, with specified LTPD
levels.
400
350
300
"' ....
250
"
w'
ec
200
::>
I-
"~
iii
150
e,. =1.30\1
IZ
..... r--,
r.....
;:
z
"'l
100
I'-
50
25
10'
103
10'
105
10'
108
107
109
MTTF (HRS.)
Test Col'Iditlons
280
LTPO/l000 Hours
2
~
20 V,
Environmental
Test
Solderability
Temperature Cycling
MIL-$TO-750
Reference
2026
1051.1
Condo B
Test Conditions
LTPO
7
6
Thermal Shock
1056.1
Moisture Resistance
1021.1
Shock
2016.1
Vibration Fatigue
2046
2056
2006
Constant Acceleration
Terminal Strength
2037.1
Condo E
Salt Atmosphere
1041.1
281
1N5719
FliOW
50823001
50823002
50823039
50823077
RELIABILITY DATA
PIN DIODES
HEWLETT
a!~ PACKARD
HPNO4165
HPNO4166
Description
For applications requiring component reliability estimation,
HewlettPackard provides reliability data for all families of
devices. Data is initially compiled from reliability tests run
prior to market introduction to demonstrate that a product
meets design criteria. Additional tests are run periodically.
The data on this sheet represents the latest review of accum
ulated test results.
Applications
This information represents the capabilities of the generic
device. Failure rates and MTTF values presented here are
achievable with normal MILS19500 TX level screening.
Reliabilitycan only be guaranteed by testing specified lots of
devices, under specified conditions, with specified LTPD
levels.
400
350
300
250
"
~.
I"----r-,
200
r--.
:J
"~
~
>z
o
~
z
150
r--
........
EA"" 1.3eV
r--.
r-.....
10 0
:;
.......... r-,
5
102
104
105
108
106
109
MTTF (HRS.)
Test Conditions
282
LTPO/1000 Hours
2
150 V,
Environmental
Test
Solderability
Temperature Cycling
MIL-STD-750
Reference
2026
1051.1
Condo B
Test Conditions
LTPD
Thermal Shock
1056.1
Moisture Resistance
1021.1
Shock
2016.1
2056
Constant Acceleration
2006
Terminal Strength
Hermeticity
2037.1
Condo E
1014
283
ABSTRACTS OF
APPLICATION NOTES AND BULLETINS
The Microwave Semiconductor Division field sales force is supported by a division applications staff. These technical specialists
investigate circuit applications of most interest to the users of these semiconductor devices. The results of these investigations are
reported in application notes or in brief application bulletins.
A complete list with brief abstracts is presented here. Below is a brief summary of Application Notes for PIN diodes. All of the
Application Notes are available from your local HP Sales Office or nearest HP Components Authorized Distributor or
Representative.
Several package styles are avai lable for use with hybrid
integrated circuits. This application note gives detailed
instructions for attaching and bonding these devices. A brief
description of an impedance matching technique for mixer
diodes is also included.
284
--------------------------------------------------------------------------------------------
this application note is a new method of resistive spot welding or modified gap welding, which uses a single electrode
to weld the beam while the conductor is contracted separately. This method allows light pressure to be used on the
weld probe, resulting in an effective bond without damaging
the beam lead device.
992
This application bulletin gives a general discription of various methods of attaching beam lead components to both
hard and soft substrates. A table summarizes most common
attachment methods with advantages, disadvantages, and
equipment costs.
The use of the HP 4815 Vector Impedance Meter in conjunction with a tunable test fixture provides an efficient and
reliable means for measuring the RF resistance of a PIN
diode.
285
---
c'
287
td
T
200C- TA
0JC
TA = ambient temperature, 0 C
0JC = thermal resistance, C/W
2. Efficiency,
where
Po
"YJ
= Po+
- -Po
-
).
where
IR
Po=
IF
= In (1 + -
,100%
Po = output power
Po = power dissipation
288
289
0017
0032
0180
0113,0114
0021
0015
-
0112
-
)
Ceramic
Package
0300
75
0241
50
35
0310
40
0132
35
0243
35
0151,0153
0253
25
0803
0800
75
0815
0805
60
0810
60
0018
0090
0825
0820,0821
45
0020
0833
0830,0320
30
0008
0840
0335,0830,
0885
25
page 292
page 294
t:====
::::::::J TYPICAL OUTPUT FREQUENCY
TYPICAL INPUT FREQUENCY
VBR
(V)
=--=-=====-=:J
c: ==.:-~-=-=::: =:::::J
C.:-..:-_-_--=-_-_-~.::J
C:.:-.:-.:-.:-_-":-':":-':_-==::J
C:'::::. .-=--_-..:-..:-":--=:l
[=::.::::.-:::::::::.. :::::J
C-:...-_-_--=--==-=-:.=:::J
c======-=-:: .:::=J
C=======::'-:'-=::::J
r
L.
page 297
FREQUENCY (GHz)
~rl-'I----~I~f'~'~I--~--~---'I------~Ir--------'1
25 50
100 1 2
12
18
26
BANDS
290
Ku
Commercial
Data Sheet
Reliability
Data Sheet
Chip
Chip
Chip
Chip
Chip
292
292
292
292
292
301
301
301
301
301
Recovery
Recovery
Recovery
Recovery
Recovery
Diode Chip
Diode Chip
Diode Chip
Diode
Diode
292
292
292
294
294
301
301
301
301
301
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
294
297
294
294
294
301
301
301
301
301
5082-0241
5082-0243
5082-0253
5082-0300
5082-0310
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0032
297
297
297
297
297
301
301
301
301
301
5082-0320
5082-0335
5082-0800
5082-0803
5082-0805
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0020
5082-0008
297
297
297
294
297
301
301
301
301
301
5082-0810
5082-0815
5082-0820
5082-0821
5082-0825
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0090
5082-0090
5082-0090
297
297
297
297
294
301
301
301
301
301
5082-0830
5082-0833
5082-0835
5082-0840
5082-0885
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0020
5082-0020
5082-0008
5082-0008
5082-0008
297
294
297
294
297
301
301
301
301
301
Part No.
Description
Chip
5082-0008
5082-0015
5082-0017
5082-0018
5082-0020
Step
Step
Step
Step
Step
Recovery
Recovery
Recovery
Recovery
Recovery
Diode
Diode
Diode
Diode
Diode
5082-0021
5082-0032
5082-0090
5082-0112
5082-0113
Step
Step
Step
Step
Step
5082-0114
5082-0132
5082-0151
5082-0153
5082-0180
5082-0015
5082-0015
5082-0018
5082-0018
5082-0032
5082-0018
5082-0017
5082-0021
291
rli~ HEWLETT
~~ PACKARD
5082-0008
5082-0015
5082-0017
STEP RECOVERY
DIODE CHIPS
5082~0018
5082-0020
5082-0021
5082-0032
5082-0090
Features
OPTIMIZED FOR BOTH LOW AND HIGH ORDER
MULTIPLIER DESIGNS FROM UHF THROUGH
Ku BAND
PASSIVATED CHIP FOR MAXIMUM STABILITY
AND RELIABILITY
GOLD TOP CONTACT FOR LONG SHELF LIFE
AND BONDABILITY
OutlineD1
Description
5082.
Of men..
sioo
0020
0008
001$
0017
0,13
15'
0.06
12.51
0,15
!6!
0.38
0.38
0.39
'16,S'
0.64
!1$j
,151
0.38
nS)
0.11
0.11
0.11
(4,5)
14.51
{4,51
OIM~NSIONS
Maximum Ratings
IN
0018
0,05
'2)
0021
0.22
0032
0090
0.32
0.15
18.5
'12,5)
.e,
0.38
125)
0-51
0.38
<lS)
0.61
1201
11$)
0.11
,4 $1
0,11
!4.51
0.11
0.11
14.51
14,51
0.11
14,5'
(20,
Applications
292
Electrical Specifications at TA = 25 C
Typical
Chip
Capacitance
CJ (pF)l:2J
Typical
Lifetime
r (ns)l:3J
Typical Transition
Time
Transition
Charge
Time
Level
(pc)
" (ps)
60
300
Nearest
Equivalent
Packaged
Part No.
5082-
Part
Number
Minimum
Breakdown
Voltage,
VSR (V)l:1]
5082-0020
25
0.4-1.0
20
5082-0008
15
0.15-0.5
10
50
100
0835
5082-0032
65
4.0
150
250
1500
0241
0820
0830
5082-0090
45
1.0
50
80
300
5082-0021
40
2.0
100
150
1000
0310
5082-0015
35
1.2
60
150
1000
0132
5082-0017
75
4.0
300
300
2400
0300
5082-0018
25
0.5
20
70
200
0253
Notes:
1. Minimum Breakdown Voltage test condition is IR = 10 }.LA.
293
rli~ HEWLETT
~~ PACKARD
Features
5082-0112
5082-0113
5082-0114
5082-0151
5082-0153
5082-0180
6)_1
0.41(.01
<0-
5082-0803
5082-0815
5082-0825
5082-0833
5082-0840
f--
Oullht\> 15
Description/Applications
These diodes are manufactured using modern epitaxial
growth techniques. The diodes are passivated with a thermal
oxide for maximum stability. The result is a family of devices
offering highly repeatable, efficient and reliable performance
which are designed to meet the general requirements of
MIL-S-19500.
25.4 (1.00f
MIN.
CATHOOE
These diodes are intended for medium and low power multipliers. Typical applications are in local oscillators, especially
where low phase noise is required, in terrestrial communications, satellite communications, TYRO, mobile communications and test equipment. Input frequencies extend down to
10 MHz with output frequencies reaching 26 GHz.
DIMeNSIONS IN
WlIU... IMIi:TERSAND
UNCHES),
2M 11.00)
MIN.
--'---*-
Maximum Ratings
0
II
-I
Outline 11
0.1;6 10.0221
1-0.46" io.61$f
. . . . . . . . . . . . . -65C to 200C
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
Mechanical specifications
The HP outline 15 and 11 packages have glass hermetic seals
with dumet leads. The maximum soldering temperature is
230 C for 5 seconds, The leads on out I ine 15 should be
restricted so that any bend starts at least 1.6 mm (.063 in.1
from the glass body.
jc
Soldering Temperature . ............... 230C for 5 sec.
294
\ Electrical specifications at TA = 25 0 C
Part
Maximum
Junction
Capacitance
OJ
Number
(pF)
Minimum
Breakdown
Voltage
VaR
(V)
Minimum
Cutoff
Frequency
(GHz)
(psec)
Ie
Transition
Tlme[1]
Maximum
Charge
tt
Minimum
Lifetime
Lewl
(pc)
(nsec)
Package
Outline
5082-0803
6.0'
70
100
400
1600
200
16
5082-0113
4.65
35
260
1600
80
11
5082-0180
4.45
50
226
1500
100
5082-0816
4.0'
50
140
320
1500
100
11
'15
5082-0114
3.65
35
225
1500
80
11
5082-P825
2.0'
45
160
160
300
30
15
15
5082-0833
1.S'
25
175
90
300
10
5082-0112
1.55
35
175
1000
50
11
5082-0151
0.65
15
100
200
10
15
5082..Q840
0.60'
15
300
100
10
15
0.40
25
75
5082-0153
95
200
10
15
Test
Conditions
f= 1 MHz
VR=10V
'VR "'SV
IR""10p,A
fc'"
IF'" 10 mA
IR=6 rnA
211'Rs
Cj
Notes:
1. The transition times shown for the package 15 devices are limited by the package inductance to a minimum of 100 ps, The lower
transition times shown for the -0833. -0840, -0151, and -0153 are based on the performance of the chip,
2, Typical HJC for Outline 15 is 600"C/W and for Outline 11 is 300" C/W,
Figure 1. Test circuit for transition time. The pulse generator circuit is adjusted for a 0.5 A pulse when testing 5082-0151 and -9840. A
pulse of 1 ,OA is used for all other diodes, The bias current is adjusted for the specified stored charge leveL The transition time is read
between the 20% and the 80% points on the oscilloscope,
295
CURRENT
SOURCE
HP4815A
VECTOR IMP
METER
r--
D.U.T.
PO 2005
PRECISION
POWER SUPPLY
HP 3430A
D.V.M.
Figure 2. Test set-up for measurement of series resistance. The D.U.T. IS forward biased (IF) and the real part of the diode impedance
is measured at 100 MHz. The D.V.M. is set up to read the real part on the Vector voltmeter. The precision power supply is used to
offset the test circuit resistance. Rs is measured at IF ~ 100 mA except 5082-0803 where IF ~ 500 mAo
+v
r--- ---,I
I
:~
I
PULSE
GENERATOR
HP
8082A
:1
I -=-
1.OK
SAMPllNG
OSCillOSCOPE
HP
17226
11~iF
50~
I
I
I
D~r
L_'~':..._~~..J
son
""
Figure 3. The circuit for measurement of the effective minority carrier lifetime. The value of the reverse current {IR) is approximately
6 mA and the forward current (IF) is 10 mA. The lifetime (r) is measured across the 50% paints of the observed wave shape. The input
pulse is provided by a pulse generator having a rise time of less than one nanosecond. The output pulse is amplified and observed on
a sampling oscilloscope.
296
Flin-
a!a
HEWLETT
PACKARD
CERAMIC PACKAGED
STEP RECOVERY
DIODES
5082-0132
5082-0241
5082-0243
5082-0253
5082-0300
5082-0310
5082-0320
5082-0335
Features
UHF THROUGH Ku BAND DIODES
For Low Order and High Order Multipliers
RFTESTED
For Guaranteed Performance (5082-0300 Series)
HERMETIC PACKAGE
For Industrial/Military Environments
Description/Applications
Olllll1lt41
HP Step Recovery Diodes are constructed using modern epitaxial techniques. Oxide passivation insures maximum
stability and reliability. Devices are available in many package
styles.
These devices are intended for use as low and high order
harmonic generators requiring the ultimate in performance
and reliability. They excel as doublers as well as high order
multipliers, because the fast transition time design allows full
usage of the forward stored charge effect in improving nonlinearity and efficiency for frequency multiplication. These step
recovery diodes have the basic design capability to meet the
general reliability requirements of MIL-S-19500, in addition
to the special reliability requirements of man-rated space
systems.
-r
O.Kt.0251
MAX.
CATHODE
HEATSlNl(
(lp"o.2pF
Lp'" hH
Out\itle 11
Maximum Ratings
Junction Operating and
Storage Temperature .................. -65 C to 200 C
Operation of these devices within the above
temperature ratings will assure a device
Median Time To Failure (MTTF) of approximately 1 x 107 hours.
DC Power Dissipation at
2000 C _ T
TCASE = 25C .........................
CASE
9jc
Oulllne40
Mechanical Specifications
Hewlett-Packard's Step Recovery Diodes are available in a
variety of packages. The metal ceramic packages are hermetically sealed. The anode studs and flanges are gold-plated
Kovar. The cathode studs aie gold-plated copper. The maximum soldering temperature for metal-ceramic packages is
230 C for 5 seconds.
297
5082-0800
5082-0805
5082-0810
5082-0820
5082-0821
5082-0830
5082-0835
5082-0885
Electrical specifications at TA = 25 C
Part
Number
5082'()SOO
3.5
5.0
75
100
40
400
1500
5082-0241
4.6'
65
31
200
1500
5082-0805
2.5
3.5
60
140
31
320
5082.()81O
1.5
2.5
60
140
31
5082.()82Q
0.7
1.5
45
160
S082.()821
0.7
1.5
45
160
5082'()132
1.5'
35
5082-0243
1.2'
35
5082-0830
0.35
1.2
25
5082-0253
O.S'
25
5082-0835
0.1
0.5
15
5082-0885
0.1
0.5
Test
Conditions
f= 1 MHz
Minimum
Breakdown
Yoltage
YeR
(V)
Frequency
Transition
Time
Junction
Capacitance
CJ
(pF)
Min.
Max.
Minimum
Cutoff
Minimum
Maximum Charge Lifetime
Level
T
Package
It
(p$ec)
Oumne
(pC)
(nsec)
Typical
Thermal
Resistance
Typical
Output
jc
(oC/W)
Power
Po
(W)
200
15
10
100
20
1500
100
20
260
1000
80
25
31
160
300
30
30
2.5
41
160
300
30
30
2.5
31
175
1000
50
40
31
200
600
40
50
200
31
100
300
10
45
1.0
31
100
200
10
75
350
31
75
100
10
60
0.3
15
350
56
75
100
10
60
iR=10",A
fe '"
1
fe
(GHz)
IF= 10 rnA
iR"'6mA
---
VR=6V
'VR = 10 V
0.3
Asa
doubler
at
midband.
2 "Rs Cj
RF Tested Diodes at TA = 25 C
ELECTRICAL SPECIFICATIONS
Part
Number
5082-
Minimum
Output
Output
Frequency,
Juncllon
Capacitance
at -10 V.
(;J)
Power,
poll]
{WI
Min.
Max.
Breakdown
VoHage
at IR= 10 IJ.A
VeR
(V)
Max.
Min.
Typical
Transition Time
Maximum
Thermal
Gharge
Typical
Lifetime
(ps)
Lewei
(pc)
(ns)
Resistance.
jc
(CfW)
Package
Outline
(GHz)
N
Order
0300
Xl0
2.0
3.2
4.7
75
100
14
40
300
2400
200
0310
X 10
0.4
1.6
2.7
40
60
30
41
160
1000
75
0320
10
X5
0.23
0.35
1.0
25
40
60
-11
75
300
25
0335
16
X8
0.03
0.25
0.5
20
30
75
31
80
100
15
fo
Note:
1. Guaranteed multiplier tested results. Input power is:
5082-0300
15 W
5062-0320
2W
5082-0310
4W
5062-0335 0.65 W
298
It
C:
10
.OO,~
POWER IN - W
POWER IN-W
.01
.01 ~
~
~
~
~
.1
fa (GHtl
Figure 4. Test circuit for transition time. Tne pulse generator circuit IS adjusted for a 0.5 A pulse when testing 5082-0253, -0335, -0835, and
-0885. A pulse of 1.0 A is used for all other diodes. The bias current is adjusted for the specified stored charge level. The transition time is
read between the 20% and the 80% pOints on the oscilloscope.
CURRENT
SOURCE
D.U.T.
I--
HP 4815A
VECTOR IMP
METER
r--- ---,I
:F
PULSE
GENERATOR
HP
8082A
PRECISION
POWER SUPPLY
r--
50n
D.V.M.
:1
I -=I
I
l' O.F
I
I
I
1,OK
I
I
SAMPLING
OSCILLOSCOPE
HP
1722B
D~r I
L_'~~_~~-1
son
299
300
Flio-
RELIABILITY DATA
STEP RECOVERY DIODES
HEWLETT
~~ PACKARD
Description
For applications requiring component reliability estimation,
Hewlett-Packard provides reliability data for all families of
devices. Data is initially compiled from reliability tests run
prior to market introduction to demonstrate that a product
meets design criteria. Additional tests are run periodically.
The data on this sheet represents the latest review of
accumulated test results.
Applications
This information represents the capabilities of the generic
device. Failure rates and MTTF values presented here are
achievable with normal MIL-S-19500 TX level screening.
Reliability can only be guaranteed by testing specified lots
of devices, under specified conditions, with specified LTPD
levels.
400
350
300
........
.........
a:
::J
250
f-
ffi"
~f-
......... r-,
200
EA -= 1.61;iV
Z
0
;::
u
z
~
150
r-
r--...
100
102
10'
104
10'
10'
107
10'
109
MTTF (HRS.I
Test Conditions
L TPD/1000 Hours
eo
301
Environmental
The following cumulative test results have been obtained from reliability testing performed at HP Components Division, in
accordance with the latest revisions of Military Semiconductor Specifications MIL-STD-19S00, MIL-STD-202 and MIL-STD-7S0,
Test
Temperature Cycling
MIL-STO-7S0
Reference
1051,1
Cond, B
Test Conditions
LTPO
Thermal Shock
10S6,1
Moisture Resistance
1021.1
Shock
2016.1
10
Vibration Fatigue
2046
10
Vibration Variable
Frequency
2056
10
2006
1 minuteeachX1,Y1, Y2,at20,000G
10
2037,1
Cond.F
20
20
Constant Acceleration
Terminal Strength
Salt Atmosphere
1041.1
302
305
FliOW
INTEGRATED
PRODUCTS
HEWLETT
~~ PACKARD
SWITCHES
MODULATORS
LIMITERS
MIXERS
COMB
GENERATORS
Broadband
10534 Series: .05-150 MHz
10514 Series: .2-500 MHz
COMB GENERATORS
100,250,500 and 1000 MHz
Drive Frequencies (Drive
Frequencies in 50-1500 MHz Range
Available on Special Request)
Input Matched to
son
Wide IF Bandwidth
0.01 to 1.0 GHz
High RF to DC
Isolation
Rugged Construction
Hermetically Packaged Diodes
For a copy of the Microwave Integrated Products Catalog
(5952-98710) write: Inquiries Mgr., Hewlett-Packard, 1507 Page
Mill Road, Palo Alto, CA 94304.
306
309
PACKAGE OUTLINES
All dimensions in millimeters (inches), except where noted.
For complete package specifications refer to individual product specification sheets.
Drawings are not to scale.
0.38
- - - (15) -------
06
01
225 (9)
2OOl8l - , .
250 (1m
2OOl8I
--IL
225 (9)
175 (7)
225 (9)
'2OOl8i-
<~::][rr-------':l~
~
8 (0.32)
\
DIMENSIONS IN
",m
7________________1____~
(1/1000 inch)
60 (2.4)
07
03
rr------------~~----------~
/GOlDBEAM
t
" \
g~ """PLATINUM
8 (.3)
s\:
METALLIZATION
GLASS
;:r
04
08
310
4OlT.6i
(/
110 (4)
-WID)
1
0.86 (.034)
0.64 (.025)
MAX.
If.--,.98
~ (.086)
I 0.30 (.012)
(.078) --1 D.25 (.0101
10
38
31
~:f)
O~oo)
~
(0.073)
1.70 tu:067)
0.58 (.023)
l=-t
,~--._
--r
L
5.38 (.212)
4.70 (.185)
25.4 (1.001
MIN.
g:U=-o-~
11
1.911.075)
1.42 (0.58)
4.06 (0.16)
0.28 (.011)
il.2i fiiiiii
3-48
UNC-2A
HEAT SINK
Q'
12
L.J
2 .7 (.105)
O-::J.OO)
1.93
(.076)
1.73 f.Oiil
40
-<~qMIN'
I
I
4.32 (.170)
-=r
1_
ir
0.58 (.023)
o.3
25.411.00)
MIN.
g;~-[)--~
(.014)
3.12 (.,23)1
2.99 (.118)
1.S0 (.071)
1.37 (.054)
1.63 (.064)
1.52 (.060)
..!
ANODE-HEAT SINK
;-
(4'3)~"0
[~80
__
_dJ__
___
..,
--r
-+
3.43(.135)
2.90 (.114)
15
IL
1 . 3 (.064)
f-~:~~ ::~~:~~
=+'_+
i
~(5.11
,0 4 3
1. 1
41
130(5.1)
110(4.3)
':+t
t
(0.4) 10
(0.31 T
720 (28.3)
LI'
'L !:i'
26 MIN (1)
680(26.8)
iilIII,
GLASS SILICON
220 IB.7)
180 l7.ii
~(OS5) DIA.
H 1.30 (.051)
. -
320112.6)
280 (11.0)
21
44
311
II--
!.,~t044)D ---1.I
110 (4)
90(3.5)
CB (.052)
1.24 (]j4)
1.57 (0.062)
ill (0.058)
2.16 (0.085)
1:65 (0.065)
~
).
~. ill~
'''. / / 'to.
~;>/~'.
~/
1.52 (0.060)
1 02 (0.040)
"-..,
0.38 MIN. (0.015)
(4 PLACES)
TYPICAL
CHIP
LOCATION
49
61
1.40 (.055) DIA.
1.30 (.051)
CATHODE
-j-----------lI
1:]--,
,
1.27 (.050)
1.02 (.040)
---'---*56
1.27 (0.050)
MAX.
0.36 (0.014)
MAX.
(O~c:a04)
TYP.
===j~I""'II-"=;===f
~
C2
3.81
(0.150)
MIN.
//1/
/3.18 (0.125)
2.95 (0.115)
//Je
0.10
(0.004)
TYP.
0.38 (0.015)
MAX.
60
.~=
~
C4
312
==t
LID DIAMETER
2.59 {QJW
2.06 (0.081)--
0.56 (0.022)
0.46 (O.Q1S)
2.79 (D.11e
1------, ~
2.69 (0.106)
2.34 (0.0921 ~
r----!
SQUARE
~I=~=fA-------'I===~
~:~~ i~:~~~: T
0.20 (O.OOS)
O.10l([OO4T
O.89~
0.64 (0.025)
'D-- =1
0.15 (0.006)
0.08 (Q1i03'j
=f====~===~==
0.64 {G.02S} ]
MAX
H4
E1
ct
'~l~
5'0Bl'20)
I...._.8.13 (.32)_~ MAX
MAX.
0.79 (0.031)
TVP
tcJj-----r:
G1/G2
0.10 (0.004)
TYP.
J.84 (0.033)
0.53 (0.021)
HPAC-70GT
0.58 (0.023)
0:43 (0.017)
CATHODE
('..,
\,--~
I 2.64
~~
(O.'O~)
c::::J~
I
SQUARE
0.20 (0.008)
0.10 ~)
KOVAR LEADS.
Au PLATED"
MIN.
0.89 (0.035)
0.08 (0.003)
0.10 (0.004)
=-'--
L~T
r
H2
HPAC-100
313
HPAC-100X
(~~8~) TYP.
~ (ci~~)
/TVP.
2.0
(0.080}--~
------'"".>--_.--1
0.64 (0.025)
0.38 (0:011))
t=:l
'"
TV":.II. __1.O
(0.040)
TYP.
0.102
(0.004)
TYP.
T~P.
It:
5.1 TVP
I
~
1.27
(0.050)
rr-
~I
. '.-'1(0.20)
..'
0.79 RTYP.
(.031)
"".:
(0.03)
TYP.
r-
.'0
TVP. :
I 0.76
1.52
I
(0.060)----1
TYP.
~
3.05
.
.. (D.12) TYP.
TYP.
L--L5.46 (0.215)
4.96 (o:T95l
HPAC-200
HPAC-200 GB/GT
314
HP Components
Authorized Distributor
and Representative Directory
May 1984
United States
Alabama
California (COnt.I
Florida (Conl.i
Iowa
Hall-Mark Electronics
4900 Bradford Drive
Huntsville 35805
(205) 837-8700
Schweber Electronics
3110 Patrick Henry Drive
Santa Clara 95050
(408) 748-4700
Hall-Mark Electronics
15301 Roosevel t 81 vd.
Sui te 303
Clearwater 33520
(813) 530-4543
Schweber Electronics
5270 North Park place N.E.
Cedar Rapids 52402
(319) 373-1417
Hami 1 ton/Avnet
wyle Laboratories
Electronics-Marketing Group
124 Maryland Street
E1 Segundo 90245
(213) 322-8100
Hamilton/Avnet Electronics
6801 N.W. 15th Way
Ft. Lauderdale 33309
(305) 971-2900
Arizona
Hamilton/Avnet
505 South Madison
Tempe 85281
(602) 231-5100
wyle Labora tor ies
Electronics Marketing Group
8155 North 24th Avenue
Phoenix 85021
(G02) 249-2232
in Tucson (602)
884-7082
Calilornia
Hall-Mark Electronics
1110 Ringwood Court
San Jose 95131
(40B) 946-0900
Hanti 1 ton/Avnet
4103 Northgate Blvd.
Sacramento 95834
(916) 925-2216
Hamilton/Avnet
4545 Viewridge Avenue
San Diego 92123
(619) 571-7510
Hami 1 ton/Avnet
1175 Bordeaux Drive
sunnyvale 94086
(408) 743-3355
Hamil ton Electro Sales
3170 Pullman Street
Costa Mesa 92626
(714) 641-4166
Hamil ton Electro Sales
10950 W. Washington Blvd.
Culver City 90230
(213) 558-2121
SchwebtH: Electronics
21139 Victory Boulevard
Canoga Park 91303
(213) 99q -4702
Wyle Laboratories
Electronics Marketing Group
17872 Cowan Avenue
Irvine 92714
(714) 863-1611
wyle Laboratories
Electronics Marketing Group
IllSl Sun Center Drive
Rancho Cordova 95670
(916) 638-5282
Wyla Laboratories
Electronics Marketing Group
9525 Chesapeake Drive
San Diego 92123
(619) 565-9171
wyle Laboratories
Electronics Marketing Group
3000 Bowers Avenue
santa Clara 95052
(408) 727-2500
Colorado
Hami 1 ton/Avnet
8765 East Orchard
Sui te 708
Englewood 80111
(303) 740-1000
Wy1e Laborator ies
Electronics Marketing Group
451 E. 124th Avenue
Thornton 80241
(303) 457-9953
Connecticut
Hami 1 ton/Avnet
Couunerce Dr i ve
Commerce Industrial Park
Danbury 06810
(203) 797-2800
Schweber Electronics
Finance Drive
Commerce Industrial Park
Danbury 06810
(203) 792-3500
Florida
Schweber Electronics
17822 Gillette Avenue
Irvine 92714
(714) 863-0200
Hall-Mark Electronics
16 71 W. McNab Road
Ft. Lauderdale 33309
(305) 971-9280
Schweber Electronics
1771 Tribute Road
Suite B
Sacramento 95815
(916) 929-9732
Hall-Mark Electronics
7648 southland Blvd.
Suite 100
Orlando 32809
(305) 855-4020
Hamilton/Avnet
3197 Tech Drive North
St. Petersburg 33702
(813) 576-3930
Hamilton/Avnet
6947 university Blvd.
Winter Park 32792
(305) 628-3888
Schweber Electronics
181 Whooping Loop
AltaMonte springs 32701
(305) 331-7555
Schweber Electronics
2830 N. 28th Terrace
Hollywood 33020
(305) 927-0511
Kansas
Hall-Mark Electronics
10815 Lakeview Dr ive
LenexCi 66219
(913) 888-4747
Hamilton/Avnet
9219 Quivlra Road
Overland Park 66215
(913) 888-8900
Maryland
Hall-Mark Electronics
6655 Amberton Drive
Baltimore 21227
(301) 796-9300
Georgia
Hamilton/Avnet
6822 Oak Hall Lane
Columbia 21045
(301) 995-3500
Hall-Mark Electronics
6410 Atlantic Boulevard
Suite 115
Norcross 30071
(404) 447-8000
Schweber Electronics
9330 Gaither Road
Gaithersburg 20760
(301) 840-5900
Hami 1 ton/Avnet
5825 D. Peachtree Corners East
Norcross 30092
(404) 447-7507
Massachusells
Schweber Electronics
303 Research Drive
Sui te 210
Norcross 30092
(404) 449-9170
Illinois
Hall-Mark Electronics
1177 Industrial Drive
Bensenville 60106
(312) 860-3800
Hami 1 ton/Avnet
1130 Thorndale Avenue
Bensenville 60106
(312) 860-7700
Schweber Electronics
904 Cambridge Drive
Elk Greve village 60007
(312) 364-3750
Hami 1 ton/Avnet
50 Tower Office Park
Woburn 01801
(617) 273-7500
Schweber Electronics
25 Wiggins Avenue
Bedford 01730
(617) 275-5100
Michigan
Hami 1 ton/Avnet
2215 29th Street S.E.
Grand Rapids 49508
(616) 243-8805
Hami 1 ton/Avnet
32487 Schoolcraft R"oad
Lhonia 48150
(313) 522-4700
Indiana
pioneer-Standard
13485 Stamford
Livonia 48150
(313) 525-1800
Hami 1 ton/Avnet
485 Gradle Drive
Carmel 46032
(317) 844-9333
Schweber Electronics
12060 Hubbard Drive
Livonia 48150
(313) 525-8100
Pioneer-Standard
6408 Castleplace Drive
Indianapolis 46250
(317) 849-7300
315
Minnesota
Ohio Icont.!
Texas I conI.)
Hall-Mark Electronics
'1838 12th Avenue, So.
Bloomington 55420
(612) 854-3223
Hamil ton/Avnet
16 Corporate Circle
East Syracuse 13057'
(315) 4"37-2641
Hamllton/AVnet
3939 Ann Arbor
Houston 77063
(713) 780-1771
Hami 1 ton/Avnet
Schweber Electronics
7865 Paragon Road
Suite 210
D,ayton, 45459
(513) 439-1800
Hami 1 ton/Avnet
5 Hub Drive
Melville 11746
(516) 454-6060
Oklahoma
Schweber Electronics
7424 w. 78th Stl.'.eet
Edina 55435
(612) 941-5280
Hamil ton/Avnet
333 Metro Park Drive
Rochester 14623
(716) 475-9130
Hall-Mark Electronics
5460 South 103rd E. Avenue
Tuls'a 74145
(918) 665-3200
Missouri
Schweber Electronics
2 Townline Circle
Rochester 14623
(716) 424-2222
Schweber Electronics
4815 S. Sheridan
Sui te 109
Tulsa 74145
(918) 622-8000
Minneapolis 55343
(612) 932-0600
Hall-Mark Electronics
2662 Metro Blvd.
Maryland Heights 63043
(314) 291-5350
Hamilton/Avnet
13743 Shoreline Court
Earth City 63045
(314) 344-1200
New Hampshire
Schweber Electronics
Bedford Farms; Bldg. 2
Kilton" South River Road
Manchester 03102
(603) 625-2250
New Jersey
Hall-Mark Electronics
spr ingdale Bus! ness Center
2091 springdale Road
Cherry Hill 08003
(609) 424-7300
Schweber Electronics
Jericho Turnpike
Westbury 11590
(516) 334-7474
Hall-Mark Electronics
5237 North Boulevard
Raleigh 27604
(919) 872-0712
Schweber Electronics
5285 North Boulevard
Raleigh 27604
(919) 876-0000
Hall-Mark Electronics
6130 Sunbury Road
Westerville 430U
(614) 891-4555
Schweber Electronics
18 Madison Road
Fairfield 07006
(201) 227-7880
New Mexico
Pennsylvania
Pioneer-Standard
259 Kappa DriVe
Pi ttsburg 15238
(412) 782-2300
Ohio
Hamilton/Avnet
Hami 1 ton/Avnet
10 Industrial Road
Fairfield 07006
(201) 575-3390
Wyle Laboratories
Electronics Marketing Group
5289 N.E. Elam Young parkway
Sui te E-I00
Hillsboro 97123
(503) 640-6000
Hamil ton/Avnet
3510 spring Forest Road
Raleigh 27604
(919) 878-0810
Hall-Mark Electronics
5821 Harper Road
Solon 44139
(216) 349-4632
Hamil ton/Avnet
6024 S.W. Jean Road
Bldg. C, Suite 10
Lake Oswego 97034
(503) 635-8831
North Carolina
Hall-Mark Electronics
116 Fairfield Road
Fairfield 07006
(201) 575-4415
1 Keystone Avenue
Oregon
Schweber Electronics
231 Gibraltar Road
Horsham 19044
(215) 441-0600
Schweber Electronics
1000 RIDe Place
Sui te 203
Pi ttsburg 15238
(412) 782-1600
Hami 1 ton/Avnet
4588 Emery Industrial Parkway
Cleveland 44128
(216) 831-3500
Hami 1 ton/Avnet
945 senate Drive
Dayton, Ohio 45459
(513) 433-0610
Schwe~er Electronics
6300 La Calma Drive
Suite 240
Austin 78752
(512) 458-8253
Schweber Electronics
4202 Beltway Drive
Dallas 75234
(214) 661-5010
Schweber Electronics
10625 Richmond Avenue
Sui te 100
Houston 77042
(713) 784-3600
Utah
Hamil ton/Avnet
1585 West 21st S.
Salt Lake City 84119
(801) 972-2800
Wyle Laboratories
Electronics Marketing Group
1959 S. 4130 west
Unit B
Salt Lake City 84104
(BOl) 974-9953
Washington
Hami 1 ton/Avnet
14212 N.E. 21st Street
Bellevue 98006
(206) 453-5844
Wyle Laborator ies
Electronics Marketing Group
1750 132nd Avenue, N.E.
Bellevue 98005
(206) 453-8300
Texas
Wisconsin
Hall-Mark Electronics
12211 Technology
Austin 78759
(512) 258-8848
Hall-Mark Electronics
9625 South 20th Street
Oakcreek 53154
(414) 761-3000
Hall-Mark Electronics
11333 Pagemill Drive
Dallas 75231
(214) 341-1147
Pioneer-Standard
4800 East 131st S:treet
Cleveland 44105
(216) 587-3600
Hami 1 ton/Avnet
.2111 W. Walnut Hill Lane
. Irving 75062
(214) 659-4111
Hami 1 ton/Avnet
2975 Moorland Road
New Berlin 53151
(4H) 784-4510
Pioneer-Standard
4433 lnterpoint Boulevard
Dayton ,45404
(513) 236-9900
Hall-Mark Electronics
8000 Westglen
P.O. Box 42190
Houston 77042
(713) 781-6100
Schweber Electronics
23880 Commerce Park Road
Beachwood 44122
(216) 464-2970
Hamilton/Avnet
2401 Rutland
Austin 78758
(512) 837-8911
Australia
Australia Icon1.l
Australia Icon1.l
Australia Icont.!
Hami 1 ton/Avnet
2524 Baylor S. E.
Albuquerque 87106
(505) 765-1500
New York
Hall-Mark Electronics
1 Comac Loop
Ronkonkoma 11779
(516) 737-0600
Schweber Electronics
150 S. Sunnyslope
Suite 120
Brookfield 53005
(414) 784-9020
International
316
Australia (conti
Denmark
Israel
Singapore
Interelko A.P.S.
SILOVEJ
26YO Karlslunde
(45) 3 140700
Unit 1
25 Brisbane Street
East perth, W.A. 6000
(61) 09 328 8499
VSI Electronics Pty. Ltd.
16 Dickson Avenue
Artarmon, N.S.W. 20
(61) 02 439 8622
Finland
Field-OY
Veneentekljantie 18
00210 Helsinki 21
(358) 0 6922 577
Austria
Transistor V.m.h.H
Auhofstr. 41a
A-1l30 Wi en
(43) 222 829451
(43)
222 829404
Belgium
Diode Belgium
LuchtschipstI:aat/Rue De
L' Aeronef 2
1140 Brusselss
(32) 2 216 2100
Brazil
Aimex
Zone Industrielle d'Antony
4H, rue de l' Aubepine
92160 Antony
(33) 1 6662112
So. Africa
Advanced Semiconduc I:.or
Devices (Pty) Ltd.
P.O. Box 2944
Johannesburgh 2000, S.A.
(27) 11 802-58204
Eledra S.p.A.
Viale ElveZla 18
20154 Milano
(39) 2 349751
Spain
Japan
F. Feutrler
H, Benoit Malon
92150 Surensnes
(33) 1 7724646
Feutr ier
Rue de Trois Glorievses
42270 St. priest En Jarez
(33) 77 7746733
F.
S.C.A. I .B.
80 rue d'Arcueil
Zone Silic
94150 Rungis
(33) 1 6872313
Canada
Germany
Hamilton/Avnet
Electronics Ltd.
Distron GmbH
Behaimstr. 3
0-1000 Berlin 10
(49) 30 3421041
EBV Elektronik
Oberweg 6
0-8025 Unterhaching
(49) 89 611051
Korea
Electronics Ltd.
2670 Sabourin Street
St. Laurent
Montreal, Quebec H4S 1M2
(514)
331-6443
Hami 1 ton/Avnet
Electronics Ltd.
(~
France
Italy
Celdis Italiana S.p.A.
Via F. LL Gracchi, 36
20092 Cinisello Balsamo
Milano
(39) 2 6120041
(613)
226-1700
Zentronics, Ltd.
8 Tilbury Court
Brampton, Ontario L6T 3T4
(416) 451-9600
Zentronics, Ltd.
Bay il
3300 14th Avenue, N.E.
Calgary, Alberta T2A 6J4
(403) 272-1021
zentronics, Ltd.
155 Colonnade Road
Units 17 & 18
Nepean, Ontario K2E 7Kl
(613) 226-8840
Zentronics, Ltd.
505 Locke Street
St. Laurent
Montreal, Quebec H4T lX7
(514) 735-5361
zentronics, Ltd.
Unit 108
11400 Bridgeport Road
Richmond, B.C. V6X 1T2
(604) 273-5575
zentronics, Ltd.
546 Weber Street North
Uni t 10
Waterloo, Ontario N2L 5C6
(519) 884-5700
Zentronics, Ltd.
590 Berry Street
Winnipeg, Mani toba R3H 051
(204) 775-8661
Diode Espana
Avda. Brasil 5, 1st planta
Madr id 20
(34) 1 455 3&86
Sweden
AS
Box 103
123 22 E'arsta
(46) 8132160
TRACO
Switzerland
Saerlocher AG
Foerrlibuckstrasse 110
CH-8037 Zuerich
(41) 1 429900
Fabr imex Ag
Kirchenweg 5
Cli-8032 Zuerich
(41) 1 251-2929
United Kingdom
Samsung Electronics Co., Ltd.
Industrial Products Division
76-561 Yeoksam-Dong Kangnam-Ku
Seoul
(82) 2 555 7555
Ingenieurbuero Dreyer
Flensburger Strasse 3
0-2380 Schleswig
(49) 4621 23121
Jermyn GmbH
postfach 1180
0-6277 Camberg
(49) 6434 230
Netherlands
Koning en Hartman
E1ektrotechniek BV
Koperwerf 30
2544 EN Den Haag
(31) 70 210101
SASCO GmbH
0-8011 putzbrunn
Hermann-Oberth-StraBe 16
Munich
(49) 89 46111
New Zealand
Hong Kong
CET LTD.
1402 Tung Wah Mansion
199-203 Hennessy Road
Wanchai
(852) 5 729376
India
Norway
317
Celdis Ltd.
37-39 Loverock Road
Reading, Berkshire
RG3 lED
(44) 734 585171
Jermyn-Mogul Distribution
vestry Estate
Otford Road
Sevenoaks, Kent
TN14 5EU
(44) 732 450144
Macro Marketing Ltd.
Burnham Lane
Slough, Berkshire
SLI 6LN
(44) 628 64422
Farnell Electronic
Components Ltd.
Canal Road
Leeds LS12 2TU
(44) 532-636311
Yugoslavia
Elektrotehna N. Sol. O.
Tozd Elzas N. Sol. O.
Titova 81
61001 LjublJana
(38) 61 347749
(38) 61 347841
HEADQUARTERS OFFICES
If there is no sales office listed for your area, contact one of these
headquarters offices.
NORTH/CENTRAL AFRICA
HewlellPackard SA
7, Rue du BoisduLan
CH-1217 MEYRlN 2. Swilzerland
Tei: (022) 83 12 12
Telex: 27835 hpse
Cable: HEWPACKSA Geneve
ASIA
Hewlell-Packard Asia Lid.
61h Floor, Sun Hung Kai Cenlre
30 Harbour Rd.
G.P.O. Box 795
HONG KONG
Tel: 58323211
Aller Jan. I, 1984
47th Floor, China Resources Bldg.
26 Harbour Rd., Wanchai
HONG KONG
Telex: 66678 HEWPA HX
Cable: HEWPACK HONG KONG
CANADA
HewlellPackard (Canada) Lid.
6877 Gareway Drive
MISSISSAUGA, Ontario L4V 1M8
Tel: (416) 678-9430
Telex: 610-492-4246
EASTERN EUROPE
Hewlett-Packard Ges.m.b.h.
lieblgasse t
P.O.Box 72
A-1222 VIENNA, Austria
Tei: (222) 2365110
Telex: 1 34425 HEPA A
NORTHERN EUROPE
HewlettPackard SA
Uilenstede 475
P.O.8ox 999
NL-1180 AZ AMSTELVEEN
The Netherlands
Tel: 20 437771
SOUTH EAST EUROPE
Hewlett-Packard S.A.
7, Rue du Bois-du-Lan
CH-1217 MEYRIN 2, Swilzerland
Tel: (022) 83 12 12
Telex: 27835 hpse
Cable: HEWPACKSA Geneve
OTHER EUROPE
Hewlett-Packard SA
P.O. Box
150, Rte du Nant-D'Avrii
CH-1217 MEYRIN 2, Swilzerland
Tel: (022) 83 8111
Telex: 22486 hpsa
Cable: HEWPACKSA Geneve
MEDITERRANEAN AND
MIDDLE EAST
Hewlell-Packard SA
Mediterranean and Middle East
Operations
Atrina Centre
32 Kifissias Ave.
Paradissos-Amarousion, ATHENS
Greece
Tel: 682 88 11
Telex: 21-6588 HPAT GR
Cable: HEWPACKSA Alhens
EASTERN USA
Hewlett-Packard Co.
4 Choke Cherry Road
ROCKVILLE, MO 20850
Tel: (301) 258-2000
MIDWESTERN USA
Hewlett-Packard Co.
5201 Tollview Drive
ROLLING MEADOWS, IL 60008
Tel: (312) 255-9800
SOUTHERN USA
Hewlett-Packard Co.
2000 South Park Place
P.O. Box 105005
ATLANTA, GA 30348
Tel: (404) 955-1500
WESTERN USA
Hewlett-Packard Co.
3939 Lankershim Blvd.
P.O. Box 3919
LOS ANGELES, CA 91604
Tel: (213) 506-3700
OTHER INTERNATIONAL
AREAS
Hewlett-Packard Co.
Inlercontinental Headquarters
3495 Deer Creek Road
PALO ALTO, CA 94304
Tel: (415) 857-1501
Telex: 034-8300
Cable: HEWPACK
ANGOLA
Teleelra
Empresa Teenlea de Equipamenlos
R. Barbosa Rodrigues, 41-1 0 T.
Calxa Poslal6487
LUANDA
Te!. 35515,35516
E,P
ARGENTINA
Hewlell-Packard Argentina SA
Avenida Santa Fe 2035
Martinez 1640 BUENOS AIRES
Tel: 798-5735, 792-1293
Telex: 17595 BIONAR
Cable: HEWPACKARG
A,E,CH,CS,P
BIolron S.A.C.I.M. e /.
Av Paseo Colon 221, PIso 9
1399 BUENOS AIRES
Tel: 30-4846, 30-1851
Telex: 17595 BIONAR
M
AUSTRALIA
Adelaide, South Australia
Office
Hewlett-Packard Australia Ltd.
153 Greenhill Road
PARKSIDE, SA 5063
Tel: 272-5911
Telex: 82536
Cable: HEWPARD Adelaide
A ,CH,CM"E,MS,P
Brisbane, Queensland Office
Hewlett-Packard Australia Lid.
10 Payne Road
THE GAP, Queensland 4061
Tel: 30-4133
Telex: 42133
Cable: HEWPARD Brisbane
A,CH,CM,E,M,P
Canberra, Australia
Capital Territory
Office
Hewlett-Packard Australia Ltd.
121 Wollongong Street
FYSHWICK, A.C. T. 2609
Tel: 80 4244
Telex: 62650
Cable: HEWPARD Canberra
CH,CM,E,P
Melbourne, Victoria Office
Hewlelt.-Packard Australia Lid.
31-41 Joseph Street
BLACKBURN, Victoria 3130
Tel: 895-2895
Telex: 31-024
Cable: HEWPARD Melbourne
A,CH,CM,CS,E,MS,P
Perth, Western Australia
Office
Hewlell-Packard Australia Ltd.
261 Stirling Highway
CLAREMONT, W.A. 6010
Tel: 3832188
Telex: 93859
Cable: HEWPARD Perth
A,CH,CM,E,MS,P
318
BAHRAIN
Green Salon
PO. Box 557
Manama
BAHRAIN
Tel: 255503-255950
Telex: 84419
p
Wael Pharmacy
P.O. Box 648
BAHRAIN
Tel: 256123
Telex: 8550 WAEL BN
E,C.M
BELGIUM
HewlettPackard Belgium SAIN.v.
Blvd de la Woluwe, 100
Woluwedal
B-1200 BRUSSELS
Tel: (02) 762-32-00
Telex: 23-494 paloben bru
A,CH,CM,CS,E,MP,P
BRAZIL
Hewlett-Packard do Brasill.e.C. Ltda.
Alameda Rio Negro, 750
Alphaville
06400 BARUERI SP
Tel: (011) 421.1311
Telex: (011) 33872 HPBR-BR
Cable: HEWPACK Sao Paulo
A,CH,CM,CS,E,M,P
Hewlell-Packard do Brasill.e.C. Ltda.
Avenida Epilacio Pessoa, 4664
22471 RIO DE JANEIRO-RJ
Tel: (021) 286.0237
Telex: 021-21905 HPBR-BR
Cable: HEWPACK Rio de Janeiro
A,CH,CM,E,MS,P
ANAMEO I.C.E.!. Ltda.
Rua Bage, 103
04012 SAO PAULO
Tel: (011) 570-5726
Telex: 02121905 HPBR-BR
M
DOMINICAN REPUBLIC
Mlcroprog S.A.
Juan Tomas Mejfa y Cotes No. 60
Arroyo Hondo
SANTO DOMINGO
Tel: 565-6268
Telex: 4510 ARENTA OR (RCA) P
CHILE
Jorge Calcagni y Cia. Ltda.
Av. IlaNa 634 Santiago
Casi/la 16475
SANTIAGO 9
Tel: 222-0222
Telex: Public Boolh 440001
A,C4/,E,M
Olympia (ChHe) Llda.
Av. Rodrigo de Araya 1045
Casi/la 256-V
SANTIAGO 21
Tel: (02) 22 55 044
Telex: 240-565 OL YMP CL
Cable: OtympiachHe SantlagochHe
CH,CS,P
CHINA, People's Republic of
China Hewlel/-Packard Rep. Office
P.O. Box 418
lA Lane 2, Luchang 51.
Beiwei Rd., Xuanwu DisITicl
BEIJING
Tel: 33-1947, 33-7426
Telex: 22601 CTSHP CN
Cable: 1920
A,CH,CM,CS,E,P
COLOMBIA
InsITumenlaci6n
H. A. Langebaek & Kier S.A.
Carrera 4A No. 52A-26
Aparlado Aereo 6287
BOGOTA I, D.E.
Tel: 212-1466
Telex: 44400 INST CO
Cable: AARIS Bogola
C4/,E,M
Casa HumboIdl Llda.
Carrera 14, No. 98-60
Apartado Aereo 51283
BOGOTA I, DE
Tel: 256-1686
Telex: 45403 CCAL CO.
A
ECUADOR
CYEDE Cia. Lida.
AvenirJa Eloy Affaro 1749
CasH/a 6423 Cet
QUITO
Tel: 450-975, 243-052
Telex: 2548 CYEDE ED
CM.E,P
Hasp/lalar S.A.
Robles 625
Casi/la 3590
QUITO
Tel: 545-250, 545-122
Telex: 2485 HOSPTL ED
Cable: HOSPITALAR-Ouilo
M
EGYPT
Inlernalional Engineering Assoclales
24 Hussetn l/eg8zi SITeel
Kasr-el-Aini
CAIRO
Tel: 23829,21641
Telex: lEA UN 93830
CH,CS,E,M
EGYPOR
P.O. Box 2558
42 fI Zahraa SITeel
CAIRO, Egypl
Tel: 650021
Telex: 93337
P
EL SALVADOR
IPESA de fI Salvador S.A.
29 Avenida Norte 1216
SAN SALVADOR
Tel: 26-6858, 26-6868
Telex: 20539IPESASAL
A,CH,CM,CS,E,P
COSTA RICA
CienUfica Coslarricense S.A.
AvenirJa 2, Cane 5
San Pedro de MonIes de aca
Aparlado .10159
SANJOSE
Tel: 24-38-20, 24-08-19
Telex: 2367 GALGUR CR
CM.E,M
FINLAND
Hewlett-Packard Oy
Revonlulenlie 7
PL 24
SF-02101 ESPOO 10
Tel: (90) 4550211
Telex: 121583 hewpa sf
CH,CM,CS,P
Hewlell-Packard Oy
(Olarinluoma 7)
PL 24
02101 ESPOO 10
Tel: (90) 4521022
A,E,MS
Hewlell-Packard Oy
Aatoksenkalv 10-C
SF-40720-72 JYYASKYLA
Tel: (941) 216318
CH
Hewlell-Packard Oy
Kainvunlie 1-C
SF-90140140ULU
Tel: (981) 338785
CH
CYPRUS
Telerexa LId.
P.O. Box 4809
14C Slassinos Avenue
NICOSIA
Tel: 62698
Telex: 2894 LEV/DO CY
E,M,P
DENMARK
Hewlell-Packard AlS
Datavej 52
DK-3460 BIRKEROD
Tel: (02) 81-66-40
Telex: 37409 hpas dk
A,CH,CM,CS,E,MS,P
Hewlell-Packard AlS
Rolighedsvej 32
DK-8240 RISSKOV, Aarhus
Tel: (06) 17-60-00
Telex: 37409 hpas dk
CH,E
319
FRANCE
Hewlett-Packard France
Z.I. Mercure B
Rue Berthelot
F-13763 Les Milies Cedex
AtX-EN-PROVENC
Tel: 16 (42) 59-41-02
Telex: 410770F
A,CH,E,MS,P'
Hewlett-Packard France
64, rue Marchand Saillant
F-610oo ALENCON
Tel: 16 (33) 29 04 42
Hewlett-Packard France
Boite Postale 503
F-25026 BESANCON
28 rue de la Republlque
F-2S000 BESANCON
Tel: 16 (81) 83-16-22
CH,M
Hewlett-Packard France
13, Place Napoleon III
F-290oo BREST
Tel: 16 (98) 03-38-35
Hewlett-Packard France
Chemin des Mouilles
Boile Poslale 162
F-69130 ECULLY Cedax (Lyon)
Tel: 16 (78) 833-81-25
Telex: 310617F
A,CH,CS,E,MP
Hewlett-Packard France
Tour Lorraine
Boulevard de France
F-91035 EYRY Cedex
Tel: 166077-96-60
Telex: 692315F
E
Hewlett-Packard France
Pare d' Activite du Bois Briard
Ave. du Lac
F-91040 EYRY Cedex
Tel: 166077-8383
Telex: 692315F
E
Hewlett-Packard France
5, avenue Raymond Chanas
F-38320 EYBENS (Grenoble)
Tel: 16 (76) 25-81-41
Telex: 980124 HP GRENOB EYBE
CH
Hewlett-Packard France
Centre d' Affaire Paris-Nord
BAliment Amp~re 5 ~tage
Rue de la Commune de Paris
Boite Postale 300
F-93153 LE BLANC MESNIL
Tel: 16 (1) 865-44-52
Telex: 211032F
CH,CS,E,MS
Hewlell-Packard France
Pare d'Actlvlt~s Cadera
Quartier Jean Marmoz
Avenue du Pr~sident JF Kennedy
F33700 MERIGNAC (Bordfiaux)
Tel: 16 (56) 34-00-84
Telex: 550105F
CH,E,MS
Hewlell-Packard France
Immueble "Les 3 B"
Nouveau Chemin de la Garde
ZAC de Bois Briand
F-44085 NANTES Cedex
Tel: 16 (40) 50-32-22
CH"
GERMAN FEDERAL
REPUBLIC
Hewlett-Packard GmbH
Geschlftsstelle
Keithstrasse 2-4
0- 1000 BERLIN 30
Tel: (030) 24-90-86
Tetex: 01S 3405 hpbln d
A,CH,E,M,P
Hewlett-Packard GmbH
GeschKftsstene
Herrenberger Strass. 130
0-7030 BOBLINGEN
Tel: (7031) 14-0
Telex:
A,CH,CM,CS,E,MP,P
Hewlett-Packard GmbH
GeschHftsstene
Emanuel-Leutze-Strasse I
0-4000 DUSSELOOIIF
Tel: (0211) 5971-1
Tetex: 085186 533 hpdd d
A,CH,CS,E,MS,P
Hewlett-Packard GmbH
Geschllftsstelle
Schleefstr. 28a
0-4600 DORTMUND-Aplerbeck
Tel: (0231) 45001
Hewlett-Packard GmbH
Vertriebszelitrale Frankfurt
Bemer Strasse I 17
Postfach 560 140
0-6000 FRANKFURT 56
Tel: (0611) 50-04-1
Tetex: 04 13249 hpffm d
A,CH,CM,CS,E,MP,P
Hewlett-Packard GmbH
GeschHftsstelle
Aussenstene Bad Homburg
Louisenstrasse 115
0-6380 BAD HOMBURG
Tel: (06172) 109-0
Hewlett-Packard GmbH
GeschKftsstene
Kapstadtring 5
0-2000 HAMBURG 60
Tel: (040) 63604- I
Telex: 021 63 032 hphh d
A,CH,CS,E,MS,P
Hewlett-Packard GmbH
GeschKftsstelle
Heidering 37-39
0-3000 HANNOVER 6 I
Tel: (051 I) 5706-0
Telex: 092 3259
A,CH,CM,E,MS,P
Hewlett-Packard GmbH
Geschllftsstelle
Rosslauer Weg 2-4
0-6600 MANNHEIM
Tel: (0621) 70050
Telex: 0462105
A,C,E
Hewlett-Packard GmbH
GeschKftsstelle
Messerschmittstrasse 7
0-7910 NEU ULM
Tel: 0731-7024 I
Telex: 0712816 HP ULM-O
A,C,E'
Hewlett-Packard GmbH
GeschHftsstelle
Ehhericherstr. 13
0-8500 NURNBERG 10
Tel: (091 I) 5205-0
Telex: 0623860
CH,CM,E,MS,P
Hewlett-Packard GmbH
Geschlflsstelle
Eschenstrasse 5
0-8028 TAUFKIRCHEN
Tet: (089)6117-1
Telex: 0524985
A,CH,CM,E,MS,P
GREAT BRITAIN
See United Kingdom
GREECE
Koslas Ksraynnis S.A.
8 Omirou Streel
ATHENS 133
Tel: 32 30 303, 32 37371
Telex: 215962 RKAR GR
A,CH,CM.CS,E,M,P
P/.AJS/O S.A.
G. Gerardos
24 Siournsra Sireel
ATHENS
Tel.' 36-11-160
Telex: 221871
P
GUATEMALA
IPESA
Avenida Reforms 3-48, Zona 9
QUA TEMALA CITY
Tel: 316627, 314786
Telex: 4192 TELTRO GU
A,CH,CM,CS,E,M,P
HONG KONG
Hewlett-Packard Hong Kong, Ltd.
G.P.O. Box 795
5th Floor, Sun Hung Kai Centre
30 Harbour Road
HONG KONG
Tel: 5-832321 I
Telex: 66678 HEWPA HX
Cable: HEWPACK HONG KONG
E,CH,CS,P
CET LId.
1402 T/HIg Wah MansIon
199-203 Hennessy Rd.
Wanchia, HONG KONG
Tel: 5-729376
Telex: 85148 efT HX
CM
Schmidt & Co. (Hong Kong) LId.
Wing on Centre, 28th Floor
Connaught Road, C.
HONGKONG
Tel: 5-455644
Telex: 74766 SCHMX HX
A,M
ICELAND
E/ding Trading Company Inc.
Hafnamvoli-Tryggvagolu
P.O. Box 895
IS-REYKJAVIK
Tel: 1-58-20, 1-63-03
M
INDIA
Computer products are sold through
Blue Star Ltd. All computer repairs and
maintenanca service is done IIlrough
Computer Maintenance Corp.
Blue Slar Ltd.
Sabri Complex HFloor
24 Residency Rd.
BANGALDRE 560 025
Tel: 55660
Telex: 0845-430
Cable: BLUESTAR
A,CH',CM,CS',E
320
BERCA Indonesia P. T.
P_O.Box 2497/Jkt
Antara Bldg., 17th Floor
.n_ Madan Mardeka Seiatan 17
JAKARTA-PIISAT
Tel: 21-344-181
Telex: BERSAL IA
A,CS,E,M
BEReA Indonesia P. T.
P. O. Box 174/SBY.
.n. Kutei No. 11
SURABAYA
Tel' 68172
Telex: 31146 BERSAL SB
Cable: BERSAL-SURABAYA
A',E.M.P
IRAQ
Hewlett-Packard Trading S.A.
Service Operalion
AI Mansoor Cily 9B/317
BAGHDAD
Tel: 551-49-73
Telex: 212-455 HEPAIRAQ IK
CH,CS
IRELAND
Hewletl-Packard Ireland Ltd.
82/63 Lower Leeson Streel
DUBLIN 2
Tel: OODI 608800
Telex: 30439
A,CH,CM,CS,E,M,P
Cardiac Services LId.
KHmoreRoad
Arlane
DUBLIN 5
Tel: (01) 351820
Telex: 30439
M
ISRAEL
Eldan EleclJonic InslJumenl LId.
P.O.Box 1270
JERUSALEM 91000
16, Ohanav SI.
JERUSALEM 94467
Tel: 533221, 553242
Telex: 25231 ABIPAKRD H.
A
ITALY
Hewlett-Packard Italiana S.p.A
Traversa 99C
Via Giulio Petroni, 19
1-70124 BARI
Tel: (080) 41-07-44
M
JAPAN
Yokogawa-Hewlett-Packard Lid.
152-1,Onna
ATSUGI, Kanagawa, 243
Tel: (0462) 28-0451
CM,C,E
Yokogawa-Helwett-Packard Ltd.
Meiji-Seimei Bldg. 6F
3-1 Hon Chiba-Cho
CHIBA,280
Tel: 472 25 7701
E,CH,CS
YokogawaHewlett-Packard Ltd.
Yasuda-Seimei Hiroshima Bldg.
6-11, Hondori, Naka-ku
HIROSHIMA, 730
Tel: 82-241-0611
Yokogawa-Hewlett-Packard Ltd.
Towa Building
2-3, Kaigan-dori, 2 Chome Chuo-ku
KOBE,650
Tel: (078) 392-4791
C,E
Yokogawa-Hewlett-Packard Lid.
Kumagaya Asahl 82 Bldg
3-4 Tsukuba
KUMAGAYA, Sailama 360
Tel: (0485) 24-6563
CH,CM,E
Yokogawa-Hewlett-Pack81d Ltd.
Asahi Shinbun Oalichl Selmei Bldg .
4-7, Hanabala-cho
KUMAMOTO,860
Tel: (0963) 54-7311
CH,E
Yokogawa-Hewlett-Packard Ltd.
Shin-Kyolo Cenler Bldg.
614, Higashi-ShiokoJi-cho
Karasuma-Nishiiru
Shlokojl-dori, Shimogyo-ku
KYOTO, 600
Tel: 075-343-0921
CH,E
Yokogawa-Hewlett-Packard Ltd.
Milo Mitsui Bldg
4-73, Sanno-maru, 1 Chome
MITO, Ibaraki 310
Tel: (0292) 25-7470
CH,CM,E
Yokogawa-Hewlett-Packard Ltd.
Sumitomo Seime114-9 Bldg.
Meieki-Minami, 2 Chome
Nakamura-ku
NAGOYA,450
Tel: (052) 571-5171
CH,CM,CS,E,MS
Yokogawa-Hewlett-Packard Ltd.
Chua Bldg.,
4-20 Nishinakajima, 5 Chome
Yodogawa-ku
OSAKA,532
Tel: (08) 304-6021
Telex: YHPOSA 523-3624
A,CH,CM,CS,E,MP,P
Yokogawa-Hewlett-Packard Ltd.
27-15, Yabe, 1 Chome
SAGAMIHARA Kanagawa, 229
Tel: 0427 59-1311
Yokogawa-Hewlell-Packard lid.
Oaiichi Seimei 8ldg.
7-1, Nishi Shinjuku, 2 ChOme
Shinjuku-ku,TOKYO 160
Tel: 03-348-4611
CH,E
Yokogawa-Hewlett-Packard Ltd.
29-21 Takaido-Higashi, 3 Chome
Suginami-ku TOKYO 168
Tel: (03) 331-611
Telex: 232-2024 YHPTOK
A,CH,CM,CS,E,MP,P
Yokogawa-Hewlett-Packard Ltg.
Oaiichi Asano Building
2-8, Odori, 5 Chome
UTSUNOMIYA, Tochigi 320
Tel: (0286) 25-7155
CH,CS,E
321
YokogawaHewlett-Pack81d Ltd.
Yasuda Seimei Nishiguchi Bldg.
30-4 Tsuruya-cho, 3 Chome
YOKOHAMA 221
Tel: (045) 312-1252
CH,CM,E
JORDAN
Mouasher coUsins Company
P.O. Box 1387 .
AMMAN
Tel: 24907, 39907
Telex: 21456 SABCO JO
CH,E,M,P
KENYA
ADCOM LId, Inc., Kenya
P.O.Box 30070
NAIROBI
Tel: 331955
Telex: 22639
E,M
KOREA
Samsung Electronics HP Division
12 Fl Klnam Bldg.
San 75-31, Yeoksam-Dong
Kangnam-Ku
Yeongdong P. O. Box 72
SEOUL
Tel: 555-7555, 555-5447
Telex: K27364 SAMSAN
A,CH,CM,CS,E,M,P
KUWAIT
AI-Khaldiya Trading & Contracling
P.O. Box 830 Safat
KUWAIT
Tel: 42-4910,41-1726
Telex: 22481 Areeg kt
CH.E,M
LEBANON
G.M. Oohnadjian
Achrafieh
P. O. Box 165. 167
BEIRIJT
Tel: 290293
!./P""
LUXEMBOURG
Hewlett-Packard Belgium S.A.lN.V.
Blvd de Ia Woluwe, 100
Woluwedal
B-1200 BRUSSELS
Tel: (02) 762-32-00
Telex: 23-494 paloben bru
A,CH,CM,CS,E,MP,P
MALAYSIA
Hewlett-Packard Sales (Malaysia)
Sdn. Bhd.
1S1 Floor, Bangunan British
American
Jalan Semantan, Oarnansara Heights
KUALA WMPUR 23-03
Tel: 943022
Telex: MA31011
A,CH,E,M,P
MALTA
Philip To/edo LId.
NoIBbIIe Rd.
MRlEHEL
Tel: 44747, 45566
Telex: Media MW 649
E,P
MEXICO
Hewlell-Packard Mexicana, B.A.
deC.V.
Av. Perllerico Sur No. 6501
Tepepan, Xochlmllco.
16020 MEXICO D,F,
Tel: 6-76-46-00
Telex: 17-74-507 HEWPACK MEX
A,CH,CS,E,MS,P
Hewlett-Packard Mexlcana, S.A.
de C,V.
Ave. Colonia del Valle 409
Col. del Valle
Municipio de Garza Garcia
MONTERREY, Nuevo Leon
Tel: 78 42 41
Telex: 038 410
CH
ECISA
Jose Vasconcelos No. 278
Col. Condesa Oe/eg. Cuauht6rnoc
MEXICOO,F. 06740
Tel: 553-1206
Telex: 17-72755 ECE ME
M
MOROCCO
Oo/beau
81 rue Karatch/
CASABLANCA
Tel: 3041-82, 3068-38
Telex: 23051,22822
E
Gerep
2 rue d'Agadir
Bo/Ie Pos/sle 156
CASABLANCA
Tel: 272093, 272095
Telex: 23 739
P
NETHERLANDS
Hewlett-Packard Nederland B.V.
Van Heuven Goedherliaan 121
NL 1181KK AMSTELVEEN
P,O. Box 667
NL 1180 AR AMSTELVEEN
Tel: (020) 47-20-21
Telex: 13 216 HEPA NL
A,CH,CM,CS,E,MP,P
Hewlett-Peckard Nederland B.V.
Bonll!lrd 2
NL 2906VK CAPELLE AID IJSSEL
P.O. Box 41
NL 2900AA CAPELLE AID IJSSEL
Tel: (10) 51-6444
Telex: 21261 HEPAC NL
A,CH,CS,E
NEW ZEALAND
Hewlell-Packard (N.Z.) LId.
5 Owens Road
P.O. Box 26-189
Epsom, AUCKLAND
Tel: 687-159
Cable: HEWPACK Auckland
CH,CM,E,P'
Hewlelt-Packard (N.Z.) LId.
4-12 Cruickshenk Street
Kilbirnie, WELLINGTON 3
P.O. Box 9443
Courtenay Place, WELLINGTON 3
Tel: 877-199
Cable: HEWPACK Wellington
CH,CM,E,P
Northrop Instruments & Systems LId.
369 Khyber Pass Road
P. O. Box 8602
AUCKLAND
Tel: 794-091
Telex: 60605
PAKISTAN
Mushko & Company LId.
1-8, S1Jeet43
Sector F-B/l
tSLAMABAD
Tel: 51071
Cable: FEMUS Rawalpindi
A,E,M
PANAMA
Electr6nico 8alboa, S.A.
Calle Samuel Lewis, Ed. Alfa
Apartado 4929
PANAM4 5
Tel: 63-6613, 63-6748
Telex: 3463 ELECTRON PG
A,CM,E,M.P
PERU
cra Electro Medica S.A.
Los Flamencos 145, San Isidro
CasHia 1030
LIlIA 1
A,M
NORTHERN IRELAND
See United Kingdom
NORWAY
Hewlell-Packard Norge AlS
Folke Bernadottes vel 50
P.O. Box 3558
N-5033 FYLLlNG.SDALEN (Berll!ln)
Tel: 0047/5/16'55 40
Telex: 16621 hpnas n
CH,CS,E,MS
tlewlett-Packard Norge AlS
Osterndalen 16-18
P_O. Box 34
N-1345 OSTEilAS
Tel: 0047/2/17 11 80
Telex: 16621 hpnas n
A,CH,CM,CS,E,M,P
OMAN
KhimjII Ramdas
P.O. Box 19
MUSCAT
Tel: 722225,745601
Telex: 3289 BROKER MBI.tUSCAT
P
CM,E,M.P
PHILIPPINES
The OnlIne Advanced Systems
Corporation
Rico House, Amorsolo Cor. Herrera
SIJeet
Legaspi VUlege, MakaU
P.O. Box 1510
MeIJoM4NILA
Tel: 85-35-81, 85-34-91, 85-32-21
Telex: 3274 ONLINE
A,CH,CS,E,M
Inc.
690-B Epifanio de /os Santos Avenue
Cubao, QUEZON CITY
P.O. Box 2649 ManHa
Tel: 98-96-81, 96-96-82, 96-96-83
Telex: 40018, 42000 ITT GLOBE
M4CKA YBOOTH
P
PORTUGAL
Mundinter
Intercamblo Mundfal de Comercio
S.A.R.L.
P.O. Box 2761
Av. Antonio Augusto de Aguiar 136
P-L/SBON
Tel: (19) 53-21-31, 53-21-37
Telex: 16691 munter p
M
SoquimIca
Av. de Liberdede, 220-2
1296 L/SBOA Codex
Tel: 56 2181/213
Telex: 13316 SABASA
P
Te/eclra-Empresa Tecnica de
Equipmentos Etecf1icos S. A.R.L.
Rua Rodrigo de Fonseca 103
P. O. Box 2531
II/ISCAT
P-LISBON 1
Tel: (19) 68-60-72
Tel: 734201-3
Telex: 3274 BAHWAN MB
CH,CS,E,P
Telex: 12598
322
PUERTO RICO
Hewlett-Packard Puerto Rico
Ave. Munoz Rivera #101
Esq. Calle Ochoa
HATO REY, Puerto Rico 00918
Tel: (809) 754-7800
Hewlett-Packard Puerto Rico
calle 272 Edificio 203
Urb. Country Club
RIO PIEDRAS, Puerto Rico
P.O. Box 4407
CAROLINA, Puerto Rico 00628
Tel: (809) 762-7255
A,CH,CS
QATAR
Computesrbia
P.O. Box 2750
DOHA
Tel: 883555
Telex: 4806 CHPARB
P
DOHA
Tel: 329993
Telex: 4156 EASTEC OH
Nasser Trading & Contracting
P.O.Box 1563
DOHA
Tel: 22170, 23539
Telex: 4439 NASSER DH
M
SAUDI ARABIA
Modern EleclJonic Es/sblishment
Hewlell-Packard Division
P.O. Box 22015
Thuobeh
AL-KHOBAR
Tel' 895-1760, 895-1764
Telex: 671106 HPMEEK SJ
Cable: ELECTA AL-KHOBAR
CH,CS,E,M
JEDDAH
Tel: 644 38 48
Telex: 4027 12 FARNAS SJ
Cable: ELECTA JEOOAH
CH,CS,E.M
SCOTLAND
See United Kingdom
SINGAPORE
HewleH-Peckard Singapore JSales)
Pte. Ltd.
#08-00 Incheape House
450-2 Alexandra Road
P.O. Box 58 Alexandra Rd. Post Office
SlNGAPORE,9115
Tel: 631788
Telex: HPSGSO RS 34209
cable: HEWPACK, Sinll!lpore
A,CH,CS,E,MS,P
SOUTH AFRICA
Hewlett-Packard So Africa (Pty.) Ltd.
P.O. Box 120
Howard Place CAPE PROYINCE 7450
Pine Park Cenler, Forest Drive,
Pinelands
CAPE PROYINCE 7405
Tel: 53-7954
Telex: 57-20006
A,CH,CM,E,MS,P
HewlettPackard So Africa (Pty.) Ltd.
P.O. Box 37099
92 Overport Drive
DURBAN 4067
Tel: 28-4178, 28-4179, 284110
Telex: 6-22954
CH,CM
HewlettPackard So Africa (Ply.) Ltd.
6 Linton Arcade
511 Cape Road
Linton Grange
PORT ELIZABETH 6000
Tel: 041-302148
CH
HewlettPackard So Africa (Pty.) Ltd.
P.O.Box 33345
Glenstantla 0010 TRANSYAAL
1st Floor East
Constantia Park Ridge Shopping
Centre
Constantia Park
PRETORIA
Tel: 982043
Telex: 32163
CH,E
Hewlett-Packard So Africa (Ply.) Ltd.
Private Bag Wendywood
SANDTON 2144
Tel: 802-5111, 802-5125
Telex: 4-20877
Cable: HEWPACK Johannesburg
A,CH,CM,CS,E,MS,P
SPAIN
Hewlett-Packard Espanola S.A.
Calle Enlenza, 321
E-BARCELONA 29
Tel: 322.24.51, 321.73.54
Telex: 52603 hpbee
A,CH,CS,E,MS,P
Hewlett-Packard Espanola S.A.
Calle San Vicente SINo
Edificio Albia II
E-8ILBAO 1
Tel: 423.83.06
A,CH,E,MS
Hewlett-Packard Espanola SA
Crta. de la Coruna, Km. 16, 400
Las Rozas
E-MADRID
Tel: (1) 637.00.11
CH,CS,M
Hewlett-Packard Espanola S.A.
Avda.S. Francisco Javier, Sino
Planta 10. Edlficio SovUla 2,
E-SEV1LLA 5
Tel: 64.44.54
Telex: 72933
A,CS,MS,P
Hewlett-Packard Espanola SA
Calle Ramon Gordillo, 1 (Entlo.3)
EYALENCIA 10
Tel: 361-1354
CH,P
SWEDEN
Hewlett-Packard Sverige AB
Sunnanvagen 14K
S22226 LUND
Tel: (046) 13-6979
Telex: (854) 17886 (via Spanga
office)
CH
Hewlett-Packard Sverige AB
Ostra Tullgatan.?
S-21128 MALMO
Tel: (040) 70270
Telex: (854) 17886 (via Spanga
office)
Hewlett-Packard Sverige AS
Vastra Vin.!ergatan9
S- 70344 OREBRO
Tel: (19) 1048-80
Telex: (854) 17886 (via Spanga
office)
CH
Hewlen-Packard Svertge AS
Skalholtsgatan 9, Kista
Box 19
S-I6393 SpANGA
Tel: (08) 750-2000
Telex: (854) 17886
Telefax: (08) 7527781
A,CH,CM,CS,E,MS,P
HewlenPackard Sverige AS
Frmallisgat~n 30
S42132 VASTRA.fROLUNDA
Tel: (031) 49-09-50
Telex: (854) 17886 (via Spanga
office)
CH,E,P
SWITZERLAND
Hewlett-Packard (Schweiz) AG
Claraslrasse 12
CH4058 BASEL
Tel: (61) 33-59-20
A
Hewlett-Packard (Schweiz) AG
7, rue du Bois-du-Lan
Case Postale 365
CH1217 MEYRIN 2
Tel: (0041) 22-83-1111
Telex:27333 HPAG CH
CH,CM,CS
Hewlett-Packard (Schweiz) AG
Allmend 2
CH-8967 WIDEN
Tel: (0041) 57 31 21 11
Telex: 53933 hpag ch
Cable: HPAG CH
A,CH,CM,CS,E,MS,P
SYRIA
General Electronic Inc.
NurI Basha Ahnaf Ebn Kays Street
P.O. Box 5781
DAMASCUS
Tel' 33-24-87
Telex: 411215
Cable: ELECTROBOR DAMASCUS
E
E.M.A.
Medina Eidem Sokak No.41/6
Yuksel Gaddesi
ANKARA
Tel: 175622
Telex: 42 591
TAIWAN
HewlettPackard Far East Ltd.
Kaohsiung Office
2/F 68-2, Chung Cheng 3rd Road
KAOHSIUNG
Tel: (07) 241-2318
CH,CS,E
HewlettPackard Far East Ltd.
Taiwan Branch
8th Floor
337 Fu Hsing North Road
TAIPEI
Tel: (02) 712-0404
Telex: 24439 HEWPACK
Cable:HEWPACK Taipei
A,CH,CM,CS,E,M,P
Ing Lih Trading Co.
3rd Floor, 7 Jen-Ai Road, Sec. 2
TAlPEt 100
Tel: (02) 3948191
Cable: INGLIH TAIPEI
THAILAND
Unimesa
30 Pa/pong Ave., Suriwong
BANGKOK 5
Tel: 235-5727
Telex: 84439 Simonco TH
Gable: UNlMESA Bangkok
A,CH.CS,E,M
TUNISIA
Tunisie E/ec/ton/que
31 Avenue de /a Liberte
TUNIS
Tel' 280-144
E,P
Corems
1 ter. Av. de Carthage
TUNIS
Tel: 253-621
Telex: 12319 CABAM TN
M
TURKEY
Teknim Company Ltd.
/tsn Gaddesi No. 7
Kavaklldere, ANKARA
Tel: 275800
Telex: 42155 TKNM TR
E
323
CH.CS.f,M,P
UNITED KINGDOM
GREAT BRITAIN
Hewlett-Packard Ltd.
Trafalgar House
Navigation Road
ALTRINCHAM
Cheshire WA 14 lNU
Tel: 061 9286422
Telex: 668068
A,CH,CS,E,M,MS,P
Hewlett-Packard Ltd.
Eistree House, Elslree Way
BOREHAMWOOD, Herts WD6 1SG
Tel: 01 207 SOOO
Telex: 8952716
E,CH,CS,P
Hewlett-Packard Ltd.
Oakfield House, Oakfield Grove
Clifton BRISTOL, Avon BS8 2BN
Tel: 0272 736806
Telex: 444302
CH,CS,E,P
Hewlett-Packard Ltd.
Bridewell House
Bridewell Place
LONDON EC4V 6BS
Tel: 01 563 6565
Telex: 298163
CH,CS,P
HewlettPackard Ltd.
Fourier House
257-263 High Street
LONDON COLNEY
Herts. AL2 1HA, SI. Albans
Tel: 0727 24400
Telex: 1-8952716
CH,CS
Hewlett-Packard ltd.
Pontefract Road
NORMANTON, West Yorkshire WF6 lRN
Tel: 0924 895566
Telex: 557355
CH,CS,P
Hewlett-Packard ltd.
The Quadrangle
106-118 Station Road
REDHILL, Surrey RHI IPS
Tel: 0737 66655
Telex: 947234
CH,CS,E,P
Hewlett-Packard Co.
2424 East Aragon Road
TUCSON, AZ 85706
Tel: (602) 889463 t
CH,E,MS"
California
Hewlett-Packard Co.
99 South Hill Dr.
BRISBANE, CA 94005
Tel: (415) 330-2500
CH,CS
Hewlett-Packard Co.
P.O. Box 7830 (93747)
5060 E. Clinton Avenue, Suile 102
FRESNO, CA 93727
Tel: (209) 252-9652
CH,CS,MS
Hewlett-Packard Co.
P.C. Box 423.0
1421 South Manhattan Avenue
FULLERTON, CA 92631
Tel: (714) 999-6700
CH,CM,CS,E,MP
Hewlett-Packard Co.
320 S. Kellogg, Suile B
GOLETA, CA 93117
Tel: (805) 967-3405
CH
Hewlett-Packard Co.
5400 W. Rosecrans Boulevard
LAWNDALE, CA 90260
P.O. Box 92105
LOS ANGELES, CA 90009
Tel: (213) 970-7500
Telex: 910-325-6608
CH,CM,CS,MP
Hewlett-Packard Co.
3155 Porler Oaks Drive
PALO ALTO, CA 94304
Tel: (415) 857-8000
CH,CS,E
Hewlett-Packard Co.
4244 So. Market Court, Suile A
P.O. Box 15976
SACRAMENTO, CA 95852
Tel: (916) 929-7222
A' ,CH,CS,E,MS
Hewlett-Packard Co.
9606 Aero Drive
P.O. Box 23333
SAN DIEGO, CA 92139
Tel: (619) 279-3200
CH,CM,CS,E,MP
Hewlett-Packard Co.
2305 Camino Ramon C"
SAN'RAMON, CA 94583
Tel: (415) 838-5900
CH,CS
Hewlett-Packard Co.
3005 Scott Boulevard
SANTA CLARA, CA 95050
Tel: (408) 988-7000
Telex: 910-338-0586
A,CH,CM,CS,E,MP
Hewlett-Packard Co.
5703 Corsa Avenue
WESTLAKE VILLAGE, CA 91362
Tel: (213) 706-6800
E',CH',CS'
Colorado
Hewletl-Packard Co.
24 Inverness Place, East
ENGLEWOOD, CO 80112
Tel: (303) 649-5000
A,CH,CM,CS,E,MS
324
Connecticut
Hewlett-Packard Co.
47 Barnes Industrial Road South
P.O. Box 5007
WALLINGFORD, CT 06492
Tel: (203) 265-7801
A,CH,CM,CS,E,MS
Florida
Hewlett-Packard Co.
2901 N.W. 62nd Sireet
P.O. Box 24210
FORT LAUDERDALE, FL 33307
Tel: (305) 973-2600
CH,CS,E,MP
Hewlett-Packard Co.
6177 Lake Ellenor Drive
P.O. Box 13910
ORLANDO, FL 32859
Tel: (3.05) 859-2900
A,CH,CM,CS,E,MS
Hewlett-Packard Co.
5750B N. Hoover Blvd., Suite 123
P.C. Box 15200
TAMPA, FL 33614
Tel: (813) 884-3282
A' ,CH,CM,CS,E' ,M'
Georgia
Hewlett-Packard Co.
2000 South Park Place
P.C. Box 105005
ATLANTA, GA 30348
Tel: (404) 955-1500
Telex: 810-766-4890
A,CH,CM,CS,E,MP
Hawaii
Hewlett-Packard Co.
Kawaiahao Plaza, Suite 190
567 South King Streel
HONOLULU, HI 96813
Tel: (808) 526-1555
A,CH,E,MS
illinois
Hewlett-Packard Co.
304 Eldorado Road
P.O. Box 1607
BLOOMINGTON, IL 61701
Tel: (309) 662-9411
CH,MS"
Hewlett-Packard Co.
1100 31st Streel, .Suite 100
DOWNERS GROVE, IL 60515
Tel: (312) 960-5760
CH,CS
Hewlett-Packard Co.
5201 Tollview Drive
ROLLING MEADOWS, IL 60008
Tel: (312) 255-9BOO
Telex: 910-687-1066
A,CH,CM,CS,E,MP
Indiana
Hewlett-Packard Co.
7301 No. Shadeland Avenue
P.O. Box 50807
INDIANAPOLIS, IN 4625.0
Tel: (317) 842-1000
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Iowa
Hewlett-Packard Co.
177622nd Slreel, Suite 1
WEST DES MOINES, IA 50265
Tel: (515) 224-1435
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Kansas
Hewlett-Packard Co.
7804 East Funston Road, #203
WICHITA, KS 67207
Tel: (316) 684-8491
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Kentucky
Hewlett-Packard Co.
10300 Linn Station Road, #100
LOUISVILLE, KY 40223
Tel: (502) 426-0100
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Louisiana
Hewlett-Packard Co.
160 James Drive Easl
ST. ROSE, LA 70087
P.O. Box 1449
KENNER, LA 70063
Tel: (504) 467-4100
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Maryland
Hewlett-Packard Co.
3701 Koppers Street
BALTIMORE, MD 21227
Tel: (301) 644-5800
Telex: 710-862-1943
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Hewlett-Packard Co.
2 Choke Cherry Road
ROCKVILLE, MD 20850
Tel: (301) 948-6370
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Massachusetts
Hewlett-Packard Co.
1775 Minuleman Road
ANDOVER, MA 01810
Tel: (617) 682-1500
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Hewlett-Packard Co.
32 Hartwell Avenue
LEXINGTON, MA 02173
Tel: (617) 861-8960
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Michigan
Hewlett-Packard Co.
4326 Cascade Road S.E.
GRAND RAPIDS, MI 49506
Tel: (616) 957-1970
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Hewlett-Packard Co.
1771 W. Big Beaver Road
TROY, MI 48084
Tel: (313) 643-8474
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Minnesota
Hewlett-Packard Co.
2025 W. Larpenteur Ave.
ST. PAUL, MN 55113
Tel: (612) 644-1100
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Missouri
Hewlett-Packard Co.
11131 Colorado Avenue
KANSAS CITY, MO 64137
Tel: (816) 763-8000
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Hewlett-Packard Co.
13001 Hollenberg Drive
BRIDGETON, MO 63044
Tel: (314) 3445100
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New Jersey
Hewlett-Packard Co.
120 W. Century Road
PARAMUS, NJ 07652
Tel: (201) 265-5000
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Hewlett-Packard Co.
60 New England Av. West
PISCATAWAY, NJ 08854
Tel: (201) 981-1199
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New Mexico
Hewlett-Packard Co.
11300 Lomas Blvd.,N.E.
P.O. Box 11634
ALBUQUERQUE, NM 87112
Tel: (505) 292-1330
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New York
('
Hewlett-Packard Co.
5 Computer Drive South
ALBANY, NY 12205
Tel: (518) 458-1550
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Hewlett-Packard Co.
9600 Main Street
P.O. Box AC
CLARENCE, NY 14031
Tel: (716) 759-8621
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Hewlett-Packard Co.
200 Cross Keys Office Park
FAIRPORT, NY 14450
Tel: (716) 2239950
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HewlettPackard Co.
7641 Henry Clay Blvd.
LIVERPOOL, NY 13088
Tel: (315) 4511820
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HewlettPackard Co.
No.1 Pennsylvania Plaza
55th Floor
34th Street & 8th Avenue
MANHATTAN NY 10119
Tel: (212) 9710800
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HewlettPackard Co.
250 Westchester Avenue
WHITE PLAINS, NY 10604
Tel: (914) 6846100
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Hewlett-Packard Co.
3 Crossways Park West
WOODBURY, NY 11797
Tel: (516) 9210300
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North Carolina
Hewlett-Packard Co.
5605 Roanne Way
P.O. Box 26500
GREENSBORO, NC 27420
Tel: (919) 8521800
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Ohio
Hewlett-Packard Co.
9920 Carver Road
CINCINNATI, OH 45242
Tel: (513) 891-9870
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Hewlett-Packard Co.
16500 Sprague Road
CLEVELAND, OH 44130
Tel: (216) 243-7300
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Hewlett-Packard Co.
962 Crupper Ave.
COLUMBUS, OH 43229
Tel: (614) 436-1041
Elf: Nov. 25, 1983
675 Brooksedge Blvd.
WESTERVILLE, OH 43081
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Hewlett-Packard Co.
330 Progress Rd.
DAYTON, OH 45449
Tel: (513) 859-8202
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Hewlett-Packard Co.
3070 Directors Row
MEMPHIS, TN 38131
Tel: (901) 346-8370
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Texas
Hewlett-Packard Co.
4171 North Mesa
Suite C-110
EL PASO, TX 79902
Tel: (915) 533-3555
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Hewlett-Packard Co.
10535 Harwin Drive
P.O. Box 42816
HOUSTON, TX 77042
Tel: (713) 776-6400
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Hewlett-Packard Co.
930 E. Campbell Rd.
P.O. Box 1270
RICHARDSON, TX 75080
Tel: (214) 231-6101
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Hewlett-Packard Co.
1020 Central Parkway South
P.O. Box 32993
SAN ANTONIO, TX 78216
Tel: (512) 494-9336
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URUGUAY
Pabfo Ferrando S.A.C. e I.
Avenida /lalia 2877
CasHla de Correa 370
MONTEVIDEO
Tel: 802586
Telex: Public Booth 90 1
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VENEZUELA
Virginia
Hewlett-Packard Co.
9255 S. W. Pioneer Court
P.O. Box 328
WILSONVILLE, OR 97070
Tel: (503) 6828000
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Hewlett-Packard Co.
4305 Cox Road
GLEN ALLEN, VA 23060
P.O. Box 9669
RICHMOND, VA 23228
Tel: (604) 7477750
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ZIMBABWE
Field Technical Sales
45 Kelvin Road, North
P.B.3458
SAUSB/JRY
Tel: 705231
Telex: 4122 RH
Pennsylvania
Washington
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Oklahoma
Hewlett-Packard Co.
304 N. Meridian, Suite A
P.O. Box 75609
OKLAHOMA CITY, OK 73147
Tel: (405) 946-9499
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Hewlett-Packard Co.
3840 S. 103rd E. Avenue, #100
P.O. Box 35747
TULSA, OK 74153
Tel: (918) 665-3300
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Oregon
HewlettPackard Co.
111 Zeta Drive
PITTSBURGH, PA 15238
Tel: (412) 7820400
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Hewlett-Packard Co.
2750 Monroe Boulevard
P.O. Box 713
VALLEY FORGE, PA 19482
Tel: (215) 6669000
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South Carolina
Hewlett-Packard Co.
Brookside Park, Suite 122
1 Harbison Way
P.O. Box 21708
COLUMBIA, SC 29221
Tel: (803) 7320400
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HewlettPackard Co.
Koger Executive Center
Chesterfield Bldg., Suite 124
GREENVILLE, SC 29615
Tel: (803) 2974120
Tennessee
Utah
Hewlett-Packard Co.
3530 W. 2100 South
SALT LAKE CITY, UT 84119
Tel: (801) 974-1700
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Hewlett-Packard Co.
15815 S.E. 37th Street
BELLEVUE, WA 98006
Tel: (206) 643-4000
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HewlettPackard Co.
Suite A
708 North Argonne Road
SPOKANE, WA 99212
Tel: (509) 9227000
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West Virginia
HewlettPackard Co.
4604 MacCorkle Ave.
P.O. Box 4297
CHARLESTON, WV 25304
Tel: (304) 9250492
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Wisconsin
HewlettPackard Co.
150 S. Sunny Slope Road
BROOKFIELD, WI 53005
Tel: (414) 7848600
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HewlettPackard Co.
224 Peters Road, Suite 102
P.O. Box 22490
KNOXVILLE, TN 37922
Tel: (615) 6912371
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325
July 1983
59526900
Flia-
HEWLETT
~~ PACKARD
For more information call your local HP sales office listed in the telephone directory white pages. Ask
for the Components Department. Or write to Hewlett-Packard: U.S.A. - P.O. Box 10301, Palo Alto,
CA 94303-0890. Europe - P.O. Box 999 1180 AZ Amstelveen, The Netherlands, Canada - 6877
Goreway Drive, Mississauga, L4V IM8, Ontario. Japan - Yokogawa-Hewlett-Packard Ltd., 3-29-21,
Takaido-Higashi, Suginami-ku. Tokyo 168. Elsewhere in the world, write to Hewlett-Packard
Intercontinental, 3495 .Deer Creek Road, Palo Alto, CA 94304.
Printed in U.S.A.