Академический Документы
Профессиональный Документы
Культура Документы
Ian Ferguson
Georgia Institute of Technology
School of Electrical and Computer Engineering
Atlanta, GA 30332-0250
Please contact ianf@ece.gatech.edu with any referencing errors and they will be corrected
ECE8833A
Please contact ianf@ece.gatech.edu with any referencing errors and they will be corrected
ECE8833A
TM
Gate Valve
Loadlock
Susceptor
Resistive Heater
Shutter
Heat Shields
Thermocouple(s)
Exhaust
Rotation
Mechanism
ECE8833A
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u
g
(disk temperature)
T
(radial velocity)
Axial Velocity
(toward disk)
(axial velocity)
Dimensionless Height
(inlet temperature)
15
Radial
Velocity
N2 H2 He
Ar
Circumferential
Velocity
10
Temperature
5
(Circumferential velocity)
0
0.5
1.5
Dimensionless Variable
Solutions of the infinite-radius rotating disk
fluid equations for high disk temperature (T
= 1400 K, T = 300K) conditions. The
temperature dependent transport properties
of different carrier gases produce slightly
different solutions
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ECE8833A
Simple Theory
Reynolds Number
200 < Re < 750
rd2 P
T
1
T
( T / P )
ECE8833A
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Temperature Patterns
Shroud Flow
Hydrides
Alkyls
700 RPM
Rotating Disk
1400 RPM
Heat Shield
Exhaust
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ECE8833A
Mg turn on delay
Cant easily characterize
NH3 Purity Issues
Temperature control
(1) Substrate
Type
Polishing
Cleaning
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ECE8833A
Thickness
one side
tw o side
0.010
31
na
0.013
22
20
0.017
11
na
35m
With 4 m
GaN
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ECE8833A
In situ Monitoring
Schematic of in situ
reflectance sensor
optical fiber to
spectrograph
Tungsten
lamp
Remote, non-intrusive
One access window
Insensitive to substrate rotation
Simple
-- no moving parts
-- stable tungsten lamp light source
Broadband detection
Reflectance
0.35
substrate
0.30
0.25
0.20
0
100
200
ECE8833A
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1100
1050
800
550
In situ cleaning
Buffer
GaN growth
AlGaN growth
Si doping
InGaN growth
QW or co-doping
GaN growth
AlGaN growth
Mg doping
Growth Time
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ECE8833A
2.5
Heat clean
R (a.u.)
1.5
1
Nucleation layer
0.5
0
0
1000
2000
3000
4000
5000
6000
Time (sec)
ECE8833A
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Growth Rate
124 kJ/Mol
0.1
1.3
1.31
1.32
1.33
1.34
1.35
1.36
1.37
1000/T (1000/K)
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ECE8833A
ECE8833A
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-2
origin
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ECE8833A
substrate
reflection
R
L3
layer
reflection
L2
L1
surface
normal
to
origin
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ECE8833A
(104) Reflection
direction of broadening
due to tilt of lattice planes
to origin
Solid State Lighting and
Illumination Engineering
surface normal
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ECE8833A
component due
to tilt
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ECE8833A
X-ray Spectra
GaN layer.
(101) rocking curve.
Twist = 0.13 degrees.
GaN layer.
(004) rocking curve.
Tilt = 0.06 degrees
Sapphire substrate
(0 0 12) rocking curve.
FWHM = 0.02 degrees
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ECE8833A
Sapphire
Tilt
0.060
0.020
Twist
0.130
0.020
5000 -8000
Angstrom
Infinite
Lateral
Tilt
Lateral
Coherence Length
Solid State Lighting and
Illumination Engineering
ECE8833A
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(002)
Screw
250 arcsec
Edge
30 arcsec
(102)
M
ix
Defect Density
ed 400 arcsec
~ 108 cm-2
(A)
750 arcsec
~ 1010 cm-2
(B)
(A)
Solid State Lighting and
Illumination Engineering
(B)
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ECE8833A
10
Morphological development
Sapphire substrate
Smooth Film
ECE8833A
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A
PL intensity map
and cross section.
0.082
0.080
0.078
FWHM (deg.)
0.076
0.074
0.072
0.070
0.068
0.066
0.064
-30
-20
-10
10
20
30
X Coordinate (mm)
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ECE8833A
11
600
1200
900
400
600
200
Growth of GaN
300
3000
4500
6000
7500
N/III Ratio
ECE8833A
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Growth of GaN
pit
dislocation
Sapphire
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ECE8833A
12
(102)
(002)
-3
Growth of p - GaN
1E18
1E17
320
360
400
440
480
FWHM (arcsec)
ECE8833A
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C
B
p-GaN PL at 300K
A
433.5 nm
B
422.1 nm
C
445.5 nm
FWHM = 300 meV
p-type GaN
(i) T=300K
(ii) T=77K
x15
(ii)
p=1x1017cm-3
x30
(i)
x1
(ii)
p=5x1017cm-3
x10
340
440
540
300
350
Wavelength (nm)
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(i)
400
450
500
550
600
Wavelength (nm)
ECE8833A
13
300 nm
300 nm
a
a) Undoped GaN
(Defect density: 1.5 x 109 cm-2)
b) p-GaN
(Defect density: 4 x 109 cm-2)
Please contact ianf@ece.gatech.edu with any referencing errors and they will be corrected
ECE8833A
Ian Ferguson
Georgia Institute of Technology
School of Electrical and Computer Engineering
Atlanta, GA 30332-0250
ECE8833A
14