IPP50R500CE

MOSFET
500VCoolMOSCEPowerTransistor

PG-TO220

tab

CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSCEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.

Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Veryhighcommutationruggedness
Easytouse/drive
Pb-freeplating,Halogenfreemoldcompound
Qualifiedforstandardgradeapplications

Drain
Pin 2

Gate
Pin 1

Applications

Source
Pin 3

PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended

Table1KeyPerformanceParameters
Parameter

Value

Unit

VDS @ Tj,max

550

RDS(on),max

0.5

ID

11.1

Qg,typ

18.7

nC

ID,pulse

24

Eoss @ 400V

2.02

Type/OrderingCode

Package

IPP50R500CE

PG-TO 220

Final Data Sheet

Marking
50S500CE

RelatedLinks
see Appendix A

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500VCoolMOSCEPowerTransistor
IPP50R500CE

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet

Rev.2.3,2016-06-13

500VCoolMOSCEPowerTransistor
IPP50R500CE

1Maximumratings

atTj=25C,unlessotherwisespecified

Table2Maximumratings
Parameter

Symbol

Continuous drain current1)

Values

Unit

Note/TestCondition

11.1
7.0

TC = 25C
TC = 100C

24

TC=25C

129

mJ

ID =2.9A; VDD = 50V

EAR

0.20

mJ

ID =2.9A; VDD = 50V

Avalanche current, repetitive

IAR

2.9

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

VDS=0...400V

Gate source voltage

VGS

-20
-30

20
30

static;
AC (f>1 Hz)

Power dissipation (non FullPAK)

TO-252

Ptot

81

TC=25C

Operating and storage temperature

Tj,Tstg

-55

150

Continuous diode forward current

IS

7.9

TC=25C

Diode pulse current

IS,pulse

24.0

TC = 25C

Reverse diode dv/dt3)

dv/dt

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25C,
tcond<2s

Maximum diode commutation speed3)

dif/dt

500

A/s

VDS=0...400V,ISD<=IS,Tj=25C,
tcond<2s

Unit

Note/TestCondition

Min.

Typ.

Max.

ID

Pulsed drain current2)

ID,pulse

Avalanche energy, single pulse

EAS

Avalanche energy, repetitive

2)

2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-252
Parameter

Symbol

Thermal resistance, junction - case

Values
Min.

Typ.

Max.

RthJC

1.55

C/W -

Thermal resistance, junction - ambient RthJA

62

C/W leaded

Soldering temperature, wavesoldering

only allowed at leads

260

Tsold

1.6mm (0.063 in.) from case for 10s

1)

Limited by Tj max <150C, Maximum Duty Cycle D = 0.5

Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)

Final Data Sheet

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500VCoolMOSCEPowerTransistor
IPP50R500CE

3Electricalcharacteristics
Table4Staticcharacteristics
Parameter

Symbol

Drain-source breakdown voltage

Values

Unit

Note/TestCondition

VGS=0V,ID=1mA

3.50

VDS=VGS,ID=0.2mA

10

1
-

VDS=500V,VGS=0V,Tj=25C
VDS=500V,VGS=0V,Tj=150C

IGSS

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

0.45
1.18

0.50
-

VGS=13V,ID=2.3A,Tj=25C
VGS=13V,ID=2.3A,Tj=150C

Gate resistance

RG

f=1MHz,opendrain

Unit

Note/TestCondition

Min.

Typ.

Max.

V(BR)DSS

500

Gate threshold voltage

V(GS)th

2.50

Zero gate voltage drain current

IDSS

Gate-source leakage curent

Table5Dynamiccharacteristics
Parameter

Symbol

Input capacitance

Values
Min.

Typ.

Max.

Ciss

433

pF

VGS=0V,VDS=100V,f=1MHz

Output capacitance

Coss

31

pF

VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy

related1)

Co(er)

25

pF

VGS=0V,VDS=0...400V

Effective output capacitance, time

related2)

Co(tr)

100

pF

ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time

td(on)

ns

VDD=400V,VGS=13V,ID=2.9A,
RG=3.4

Rise time

tr

ns

VDD=400V,VGS=13V,ID=2.9A,
RG=3.4

Turn-off delay time

td(off)

30

ns

VDD=400V,VGS=13V,ID=2.9A,
RG=3.4

Fall time

tf

12

ns

VDD=400V,VGS=13V,ID=2.9A,
RG=3.4

Unit

Note/TestCondition

Table6Gatechargecharacteristics
Parameter

Symbol

Gate to source charge

Values
Min.

Typ.

Max.

Qgs

2.3

nC

VDD=400V,ID=2.9A,VGS=0to10V

Gate to drain charge

Qgd

10

nC

VDD=400V,ID=2.9A,VGS=0to10V

Gate charge total

Qg

18.7

nC

VDD=400V,ID=2.9A,VGS=0to10V

Gate plateau voltage

Vplateau

5.3

VDD=400V,ID=2.9A,VGS=0to10V

1)

Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

2)

Final Data Sheet

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500VCoolMOSCEPowerTransistor
IPP50R500CE

Table7Reversediodecharacteristics
Parameter

Symbol

Diode forward voltage

Values

Unit

Note/TestCondition

VGS=0V,IF=2.9A,Tf=25C

180

ns

VR=400V,IF=2.9A,diF/dt=100A/s

1.2

VR=400V,IF=2.9A,diF/dt=100A/s

12

VR=400V,IF=2.9A,diF/dt=100A/s

Min.

Typ.

Max.

VSD

0.85

Reverse recovery time

trr

Reverse recovery charge

Qrr

Peak reverse recovery current

Irrm

Final Data Sheet

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500VCoolMOSCEPowerTransistor
IPP50R500CE

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

Diagram2:Safeoperatingarea
102

80
70
1 s

101
60

10 s

ID[A]

Ptot[W]

50
40

100 s
100

1 ms
10 ms

30
DC
10-1

20
10
0

40

80

120

10-2

160

100

101

TC[C]

102

103

VDS[V]

Ptot=f(TC)

ID=f(VDS);TC=25C;D=0;parameter:tp

Diagram3:Safeoperatingarea

Diagram4:Max.transientthermalimpedance

101

10

101

1 s
100

0.5

10

ZthJC[K/W]

ID[A]

10 s

100 s
1 ms
10 ms

0.1
0.05
0.02
10-1
0.01
single pulse

DC

10-1

10-2

0.2

100

101

102

103

10-2

10-5

10-4

VDS[V]

10-2

10-1

tp[s]

ID=f(VDS);TC=80C;D=0;parameter:tp

Final Data Sheet

10-3

ZthJC=f(tP);parameter:D=tp/T

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500VCoolMOSCEPowerTransistor
IPP50R500CE

Typ.outputcharacteristicsTj=25C

Typ.outputcharacteristicsTj=125C

30

18
16

20 V

20 V

25

10 V
14

10 V
8V

12

8V

ID[A]

ID[A]

20

15
7V

7V

10
8

6V
10

6
5.5 V

6V
5

4
5V

5.5 V
2

5V

4.5 V

4.5 V
0

10

15

20

10

VDS[V]

15

20

VDS[V]

ID=f(VDS);Tj=25C;parameter:VGS

ID=f(VDS);Tj=125C;parameter:VGS

Typ.drain-sourceon-stateresistance

Drain-sourceon-stateresistance

1.80

1.4

1.2
1.60
5V

5.5 V

6V

6.5 V

1.0

7V

98%

RDS(on)[]

RDS(on)[]

1.40

1.20

0.8
typ
0.6

10 V
0.4

1.00
0.2

0.80

10

15

0.0
-50

-25

25

50

ID[A]
RDS(on)=f(ID);Tj=125C;parameter:VGS

Final Data Sheet

75

100

125

150

175

Tj[C]
RDS(on)=f(Tj);ID=2.3A;VGS=13V

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500VCoolMOSCEPowerTransistor
IPP50R500CE

Typ.transfercharacteristics

Typ.gatecharge

30

10
9

25

25 C

120 V

400 V

20

15

VGS[V]

ID[A]

150 C

5
4

10

3
2

1
0

10

10

VGS[V]

15

20

VGS=f(Qgate);ID=2.9Apulsed;parameter:VDD

Avalancheenergy

Drain-sourcebreakdownvoltage

140

580

120

560

100

540

80

520

VBR(DSS)[V]

EAS[mJ]

ID=f(VGS);VDS=20V;parameter:Tj

60

500

40

480

20

460

25

50

75

100

125

150

175

440
-60

-20

Tj[C]

20

60

100

140

180

Tj[C]

EAS=f(Tj);ID=2.9A;VDD=50V

Final Data Sheet

25

Qgate[nC]

VBR(DSS)=f(Tj);ID=1mA

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500VCoolMOSCEPowerTransistor
IPP50R500CE

Typ.capacitances

Typ.Cossstoredenergy

10

3.0

2.5
103
Ciss

Eoss[J]

C[pF]

2.0

102
Coss

1.5

1.0
101
Crss

100

100

0.5

200

300

400

500

0.0

VDS[V]

100

200

300

400

500

VDS[V]

C=f(VDS);VGS=0V;f=1MHz

Eoss=f(VDS)

Forwardcharacteristicsofreversediode
102

IF[A]

101

125 C
25 C

100

10-1

0.4

0.6

0.8

1.0

1.2

1.4

VSD[V]
IF=f(VSD);parameter:Tj

Final Data Sheet

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500VCoolMOSCEPowerTransistor
IPP50R500CE

5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics

Diode recovery waveform

V ,I

Rg1

VDS( peak)

VDS

VDS

VDS

trr

IF

Rg 2

tF

tS

dIF / dt

IF
QF

IF

dIrr / dt trr =tF +tS

Qrr = QF + QS

Irrm

Rg1 = Rg 2

10 %Irrm

QS

Table9Switchingtimes
Switching times test circuit for inductive load

Switching times waveform

VDS

90%

VDS
VGS

VGS

10%

td(on)
ton

tr

td(off)

tf
toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit

Unclamped inductive waveform

V(BR)DS
ID

VDS

VDS

Final Data Sheet

10

ID

VDS

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500VCoolMOSCEPowerTransistor
IPP50R500CE

6PackageOutlines

Figure1OutlinePG-TO220,dimensionsinmm/inches

Final Data Sheet

11

Rev.2.3,2016-06-13

500VCoolMOSCEPowerTransistor
IPP50R500CE

7AppendixA
Table11RelatedLinks
IFXCoolMOSWebpage:www.infineon.com
IFXDesigntools:www.infineon.com

Final Data Sheet

12

Rev.2.3,2016-06-13

500VCoolMOSCEPowerTransistor
IPP50R500CE

RevisionHistory
IPP50R500CE
Revision:2016-06-13,Rev.2.3
Previous Revision
Revision

Date

Subjects (major changes since last revision)

2.0

2012-06-29

Release of final version

2.1

2013-07-16

update to Halogen free mold compound

2.2

2015-11-17

Updated to qualified for standard grade & updated package drawing

2.3

2016-06-13

Updated ID ratings, Zth, SOA and Pd curves

TrademarksofInfineonTechnologiesAG
AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade,
EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon,
ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE,
PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS,
SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Publishedby
InfineonTechnologiesAG
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2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet

13

Rev.2.3,2016-06-13