IRFU110, SiHFU110

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Halogen-free According to IEC 61249-2-21

Definition
Straight Lead
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

100

RDS(on) ()

VGS = 10 V

0.54

Qg (Max.) (nC)

8.3

Qgs (nC)

2.3

Qgd (nC)

3.8

Configuration

Single
D

IPAK
(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

D S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

IPAK (TO-251)
SiHFU110-GE3
IRFU110PbF
SiHFU110-E3
IRFU110
SiHFU110

Lead (Pb)-free and Halogen-free

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

4.3
2.7

17
0.2

W/C

EAS

75

mJ

Repetitive Avalanche Currenta

IAR

4.3

Repetitive Avalanche Energya

EAR

2.5

mJ

Single Pulse Avalanche Energyb

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)

for 10 s

PD

25

dV/dt

5.5

V/ns

TJ, Tstg

- 55 to + 150
300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91397
S10-2549-Rev. C, 08-Nov-10

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IRFU110, SiHFU110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

MIN.

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

110

Maximum Junction-to-Case (Drain)

RthJC

5.0

UNIT
C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

VGS = 0 V, ID = 250 A

100

VDS/TJ

Reference to 25 C, ID = 1 mA

0.63

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

V
nA

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance

IGSS
IDSS
RDS(on)
gfs

VGS = 20 V

100

VDS = 100 V, VGS = 0 V

25

VDS = 80 V, VGS = 0 V, TJ = 125 C

250

0.54

1.1

180

81

15

8.3

2.3

ID = 0.90 Ab

VGS = 10 V

VDS = 50 V, ID = 0.90 A

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5

VGS = 10 V

ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b

Gate-Drain Charge

Qgd

3.8

Turn-On Delay Time

td(on)

6.9

Rise Time
Turn-Off Delay Time
Fall Time

tr
td(off)

VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10b

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

Between lead,
6 mm (0.25") from
package and center of
die contact

16

15

9.4

4.0

6.0

1.5

12

pF

nC

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage

IS
ISM
VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 1.5 A, VGS = 0

Vb

TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb

2.5

100

200

ns

0.44

0.88

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

IRFU110, SiHFU110
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 C

Fig. 2 - Typical Output Characteristics, TC = 150 C

Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFU110, SiHFU110
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

IRFU110, SiHFU110
Vishay Siliconix

RD

VDS
VGS

D.U.T.

Rg

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

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IRFU110, SiHFU110
Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

VDS
tp

VDD
D.U.T

Rg

+
-

I AS

V DD

VDS

10 V
0.01

tp

Fig. 12a - Unclamped Inductive Test Circuit

IAS
Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

IRFU110, SiHFU110
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig.14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91397.

Document Number: 91397

S10-2549-Rev. C, 08-Nov-10

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Legal Disclaimer Notice

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Vishay

Disclaimer

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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16

Document Number: 91000