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Elementul NAND:

Fig1:Elementul Si-Nu
Testarea erorilor:

In S-Edit asamblarea schemei.

Rezultatele exportarii:
* SPICE netlist written by S-Edit Win32 10.10
* Written on Nov 30, 2016 at 01:28:14
* Waveform probing commands
.probe
.options probefilename="File3.dat"
+ probesdbfile="C:\Program Files (x86)\Tanner EDA\T-Spice
10.1\tutorial\schematic\File3.sdb"
+ probetopmodule="Module0"
.SUBCKT NAND in1 in2 out Gnd Vdd
.param length=5u nwidth=8u pwidth=12u
mt1 out in1 nn1 Gnd nmos L='length' W='nwidth'
mt2 nn1 in2 Gnd Gnd nmos L='length' W='nwidth'
mt3 out in1 Vdd Vdd pmos L='length' W='pwidth'
mt4 out in2 Vdd Vdd pmos L='length' W='pwidth'
.ENDS
* Main circuit: Module0
.op
.include ml2_125.md
.ic nand1/nn1=2V
XNAND1 a b Outab Gnd Vdd NAND
vvdd Vdd Gnd 5.0
vb b Gnd 5
va a Gnd pwl(0ns 0V 100ns 0V 105ns 3V 200ns 3V 205ns 0V 300ns
+ 0V 305ns 3V 400ns 3V 405ns 0V 500ns 0V 505ns 3V 600ns 3V)
.tran 1n 600n
.print tran a outab nand1/nn1
* End of main circuit: Module0
Rezultatele simularii:
T-Spice - Tanner SPICE
Version 10.10
Standalone lock IDs:
Product Release ID: T-Spice Win32 10.10.20050307.17:21:35
Copyright (c) 1993-2005 Tanner Research, Inc.
Parsing "C:\Program Files (x86)\Tanner EDA\T-Spice
10.1\tutorial\schematic\Module0.sp"
Including "ml2_125.md"
Warning : Source perimeter (PS) is zero for MOSFET device XNAND1.mt1
Warning : Drain perimeter (PD) is zero for MOSFET device XNAND1.mt1
Warning : Source perimeter (PS) is zero for MOSFET device XNAND1.mt2
Warning : Drain perimeter (PD) is zero for MOSFET device XNAND1.mt2
Warning : Source perimeter (PS) is zero for MOSFET device XNAND1.mt3
Warning : Drain perimeter (PD) is zero for MOSFET device XNAND1.mt3
Warning : Source perimeter (PS) is zero for MOSFET device XNAND1.mt4

Warning : Drain perimeter (PD) is zero for MOSFET device XNAND1.mt4


Probing options:
probefilename = File3.dat
probesdbname = C:\Program Files (x86)\Tanner EDA\T-Spice
10.1\tutorial\schematic\File3.sdb
probetopmodule = Module0
Device and node counts:
MOSFETs - 4
MOSFET geometries - 2
BJTs - 0
JFETs - 0
MESFETs - 0
Diodes - 0
Capacitors - 0
Resistors - 0
Inductors - 0
Mutual inductors - 0
Transmission lines - 0
Coupled transmission lines - 0
Voltage sources - 3
Current sources - 0
VCVS - 0
VCCS - 0
CCVS - 0
CCCS - 0
V-control switch - 0
I-control switch - 0
Macro devices - 0
External C model instances - 0
Subcircuits - 1
Subcircuit instances - 1
Independent nodes - 2
Boundary nodes - 4
Total nodes - 6
*** 8 WARNING MESSAGES GENERATED DURING SETUP
Warning : Negative mos conductance for device XNAND1.mt3
v(d), v(g), v(s), v(b) = 5.000000e+000
0.000000e+000
5.000000e+000
5.000000e+000
vds, vgs, vbs = -3.122407e-007 -5.000000e+000 0.000000e+000
gds, gm, gmbs = 2.800069e-004
1.818368e-011
-2.378299e-012
ids = -3.299227e-010
Warning : Negative mos conductance for device XNAND1.mt2
v(d), v(g), v(s), v(b) = 2.747514e-007 5.000000e+000
0.000000e+000
0.000000e+000
vds, vgs, vbs = 2.747514e-007 5.000000e+000
0.000000e+000
gds, gm, gmbs = 4.189690e-004
2.496540e-011
-3.014491e-012
ids = 3.245968e-010
* SIMULATION STATISTICS:
* DC operating point
*
Total DC operating points
=1
*
Total Newton iterations
=4
*
Total Current evaluations
=5
* Transient analysis
*
Transient timesteps
= 362
*
Successful timesteps
= 362
*
Failed timesteps
=0
*
Newton non-convergence failures = 0
*
Delta voltage (dv) failures
=0
*
Newton iterations
= 477
*
Successful Newton iterations
= 477

*
Failed Newton iterations
=0
*
Average Newton iterations/timestep = 1.318
*
Average Newton iterations/success = 1.318
*
Current evaluations
= 885
*
* Matrix statistics:
OP
TRAN
*
Matrix factors
4
477
*
Matrix solves
4
477
*
Size
1
2
*
Initial elements
1
4
*
Final elements
1
4
*
Fill-ins
0
0
*
Initial density
100.00%
100.00%
*
Final density
100.00%
100.00%
*
* Total current evaluations
= 890
* Total Newton iterations
= 481
* Total matrix factorizations
= 481
* Total matrix-vector solves
= 481
* Total matrix solve time (seconds)
= 0.001
*
* T-Spice process times
*
Newton solver
0.06 seconds
*
Current evaluations
0.00 seconds
*
Jacobian construction
0.06 seconds
*
Linear solver
0.00 seconds
*
Parsing
0.01 seconds
Setup
0.04 seconds
DC operating point
0.00 seconds
Transient Analysis
0.10 seconds
Overhead
1.81 seconds
----------------------------------------Total
1.96 seconds
Simulation completed

with 10 Warnings

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