Advanced Power

Electronics Corp.

AP01N40G-HF-3

N-channel Enhancement-mode Power MOSFET

Fast Switching Characteristics

Low Gate Charge

Simple Drive Requirement

100% Avalanche-tested

RoHS-compliant, halogen-free SOT-89 package

BV DSS

400V

RDS(ON)

16

ID

200mA

Description
D

Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP01N40G-HF-3 is in the popular SOT-89 small package which is
widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in low current applications such as small
switching power supplies and load switches.

S
D
G

SOT-89 (G)

Absolute Maximum Ratings

Rating

Units

VDS

Symbol

Drain-Source Voltage

Parameter

400

VGS

Gate-Source Voltage

20

ID at TA=25C

Continuous Drain Current

0.2

ID at TA=70C

Continuous Drain Current

0.14

0.8

1.25

IDM

Pulsed Drain Current

PD at TA=25C

Total Power Dissipation

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data

Parameter

Symbol
Rthj-a

Maximum Thermal Resistance, Junction-ambient

Value

Units

100

C/W

Ordering Information
AP01N40G-HF-3TR

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

: in RoHS-compliant halogen-free SOT-89, shipped on tape and reel, 1000pcs/ reel

201005191-3

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Advanced Power
Electronics Corp.

AP01N40G-HF-3

Electrical Specifications at Tj=25C (unless otherwise specified)

Symbol
BVDSS

Parameter

Test Conditions

Drain-Source Breakdown Voltage

2

Min.

Typ.

Max. Units

VGS=0V, ID=250uA

400

VGS=10V, ID=0.2A

16

RDS(ON)

Static Drain-Source On-Resistance

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=0.2A

0.2

IDSS

Drain-Source Leakage Current

VDS=400V, VGS=0V

10

uA

IGSS

Gate-Source Leakage

VGS=20V, VDS=0V

100

nA

ID=1A

2.9

4.6

nC

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=320V

0.6

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

0.6

nC

td(on)

Turn-on Delay Time

VDD=200V

7.7

ns

tr

Rise Time

ID=1A

12

ns

td(off)

Turn-off Delay Time

RG=3.3

23

ns

tf

Fall Time

VGS=10V

73

ns

Ciss

Input Capacitance

VGS=0V

76

125

pF

Coss

Output Capacitance

VDS=25V

11

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

pF

Min.

Typ.

IS=0.8A, VGS=0V

1.5

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=1A, VGS=0V

260

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

460

nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t <10s

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

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Advanced Power
Electronics Corp.

AP01N40G-HF-3

Typical Electrical Characteristics

0.6

1.2

10V
9.0V
8.0V
7.0V
V G = 6.0 V

ID , Drain Current (A)

0.8

0.6

0.4

10V
9.0V
8.0V
7.0V

T A =150 o C

0.5

ID , Drain Current (A)

T A =25 C
1

0.4

V G = 6.0 V
0.3

0.2

0.1

0.2

0
4

12

20

16

24

V DS , Drain-to-Source Voltage (V)

12

16

20

24

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3

1.2

1.1

Normalized RDS(ON)

Normalized BVDSS (V)

I D =0.2A
V G =10V

0.9

0.8

0
-50

50

100

-50

150

T j , Junction Temperature ( C)

Normalised BVDSS vs.

Junction Temperature

100

150

Fig 4. Normalized On-Resistance

vs. Junction Temperature

2.4

T j = 150 o C

50

T j , Junction Temperature ( C )

VGS(th) (V)

IS (A)

Fig 3.

o
T j = 25 C

1.6

1.2

0.8
0

0.2

0.4

0.6

0.8

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

1.4

-50

50

100

150

T j , Junction Temperature ( C )

Fig 6. Gate Threshold Voltage vs.

Junction Temperature

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Advanced Power
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AP01N40G-HF-3

Typical Electrical Characteristics (cont.)

f=1.0MHz

160

I D =1A
V DS =320V
10

120
8

C (pF)

VGS , Gate to Source Voltage (V)

12

80

C iss

40
2

C oss
C rss

0
0

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100us
1ms
10ms

ID (A)

0.1

100ms
1s

0.01

T A =25 o C
Single Pulse

DC

Normalized Thermal Response (Rthja)

Duty factor=0.5

Operation in this
area limited by
RDS(ON)

0.2

0.1

0.1

0.05

0.02
0.01

PDM
0.01

t
Single Pulse

T
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=100C/W

0.001

0.001
0.1

10

100

1000

0.0001

0.001

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.01

0.1

10

100

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
10V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Charge

Fig 12. Gate Charge Waveform

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Advanced Power
Electronics Corp.

AP01N40G-HF-3

Package Dimensions: SOT-89

D
D1

Millimeters

D E

SYMBOLS

MIN

NOM

MAX

0.32

0.42

0.52

b1

0.40

0.50

0.60

D1

1.40

1.60

1.80

4.40

4.50

4.60

2.30

2.45

2.60

E1

3.80

4.05

4.30

1.30

1.50

1.70

2.80

3.00

3.20

E1

L
b

b1
e
G

1.40

1.50

1.60

0.34

0.39

0.44

0.80

1.00

1.20

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

A
C

Marking Information:

Product: AP01N40G

1N40

Package:
G = RoHS-compliant, halogen-free SOT-89

YWWS

Date/lot code
Y
= Last digit of the year
WW = Work week
S

Packing:

= lot code sequence

Parts are shipped on tape and reel, 1000pcs per reel. The reel is sealed in a moisture barrier
bag (MBB). Once the bag is opened, the parts should be considered moisture-sensitive,
as defined in IPC/JEDEC standard, J-STD-020C, with MSL=3, and handled accordingly.

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

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