Advanced Power

Electronics Corp.

AP9431GH-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

BV DSS

Fast Switching Characteristics

Low Gate Charge
G

RoHS-compliant, halogen-free

55V

R DS(ON)

24m

ID

23.5A

Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.

D (tab)

The AP9431GH-HF-3 is in the TO-252 package which is widely preferred for

commercial and industrial surface mount applications such as medium-power
DC/DC converters.

TO-252 (H)

Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID at TC=25C
ID at TC=70C

Rating

Units

55

20

Continuous Drain Current

23.5

Continuous Drain Current

16.6

70

IDM

Pulsed Drain Current

PD at TC=25C

Total Power Dissipation

30

PD at TA=25C

Total Power Dissipation

2.4

TSTG

Storage Temperature Range

-55 to 175

TJ

Operating Junction Temperature Range

-55 to 175

Thermal Data
Symbol

Parameter

Rthj-c

Maximum Thermal Resistance, Junction-case

Rthj-a

Maximum Thermal Resistance, Junction-ambient (PCB mount)3

Value

Unit

C/W

62.5

C/W

Ordering Information
AP9431GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

201001061-3 1/5

Advanced Power
Electronics Corp.

AP9431GH-HF-3

Electrical Specifications at Tj=25C (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

55

RDS(ON)

Static Drain-Source On-Resistance 2

VGS= 10V, ID= 18A

24

VGS= 4.5V, ID= 12A

42

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=18A

21

IDSS

Drain-Source Leakage Current

VDS=44V, VGS=0V

25

uA

IGSS

Gate-Source Leakage

VGS=20V

100

nA

ID=18A

13

21

nC

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=44V

3.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

nC

td(on)

Turn-on Delay Time

VDS=30V

ns

tr

Rise Time

ID=18A

31

ns

td(off)

Turn-off Delay Time

RG=2, VGS= 10V

22

ns

tf

Fall Time

RD=1.67

ns

Ciss

Input Capacitance

VGS=0V

800

1280

pF

Coss

Output Capacitance

VDS=25V

80

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

70

pF

RG

Gate Resistance

f=1.0MHz

2.1

Min.

Typ.

IS=18A, VGS=0V

1.3

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=10A, VGS=0V

22

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

17

nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300s , duty cycle < 2%
3.Surface mounted on 1 in 2 copper pad of FR4 board,

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com

2/5

Advanced Power
Electronics Corp.

AP9431GH-HF-3

Typical Electrical Characteristics

60

50

10V
7.0V
6.0V
5.0V

ID , Drain Current (A)

50

10V
7.0V
6.0V
5.0V

T C =175 o C
40

ID , Drain Current (A)

T C =25 o C

40

30

V G = 4.0 V
20

V G =4.0V

30

20

10
10

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.4

50

I D =18A
V G =10V

I D =12A
o

T C =25 C
2.0

Normalized RDS(ON)

RDS(ON) (m )

40

30

1.6

1.2

20
0.8

0.4

10
2

-50

10

50

100

150

200

T j , Junction Temperature ( o C)

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance

vs. Junction Temperature
1.6

12

Normalized VGS(th) (V)

10

IS(A)

T j =175 o C

T j =25 o C

1.2

0.8

0.4

0.0

0.2

0.4

0.6

0.8

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

1.4

-50

50

100

150

200

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage vs.

Junction Temperature

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Advanced Power
Electronics Corp.

AP9431GH-HF-3

10

VGS , Gate to Source Voltage (V)

f=1.0MHz

1200

I D =18A
V DS =44V

1000

C (pF)

C iss

800

600

4
400

2
200

C oss
C rss

0
0

12

16

20

24

13

17

21

25

29

V DS ,Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1

Operation in this
area limited by
RDS(ON)

100us

ID (A)

10

1ms
10ms
100ms
DC

T C =25 o C
Single Pulse
0

Normalized Thermal Response (Rthjc)

100

Duty factor = 0.5

0.2

0.1

0.1
0.05

PDM

0.02

T
0.01

Duty factor = t/T

Peak Tj = PDM x R thjc + T c
Single Pulse

0.01
0.1

10

100

0.00001

0.0001

Fig 9. Maximum Safe Operating Area

0.001

0.01

0.1

t , Pulse Width (s)

V DS ,Drain-to-Source Voltage (V)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveforms

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Charge

Fig 12. Gate Charge Waveform

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Advanced Power
Electronics Corp.

AP9431GH-HF-3

Package Dimensions: TO-252

D
D1

E2

E3

B1

F1

Millimeters

SYMBOLS

E1

MIN

NOM

MAX

A2

1.80

2.30

2.80

A3

0.40

0.50

0.60

B1

0.40

0.70

1.00

6.00

6.50

7.00

D1

4.80

5.35

5.90

E3

3.50

4.00

4.50

2.20

2.63

3.05

F1

0.50

0.85

1.20

E1

5.10

5.70

6.30

E2

0.50

1.10

1.80

--

2.30

--

0.35

0.50

0.65

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

R : 0.127~0.381

A2

A3

(0.1mm

Marking Information:
Laser Marking
Product: AP9431

9431GH
YWWSSS

2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Package code
GH = RoHS-compliant halogen-free TO-252
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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