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Ex/ME/T/324/98/2013

B ACHELOR OF ENGINEERING IN M ECHANICAL ENGINEERING

EXAMINATION, 2013

b) Describe n-type extrinsic silicon semiconductor.

c) Write a short note on glass transition temperature.

7.

a) The electrical resistivity of pure silicon is 2.3

8+7+5=20

( 3rd Year, 2nd Semester )

103.m at

MATERIAL SCIENCE AND ENGINEERING

room temperature, 27oC (300K). Calculate its electrical

Time : Three hours

Full Marks : 100

conductivity at 200 C. Assume that the Eg of silicon is

Answer any five questions.

1.1eV; K = 8.62 5 105 e /K.

Sketches should be drawn by pencil only.

b) Write a short note on energy band diagrams.
1.

a) Explain the octahedral configuration of a FeO unit cell.

c) Explain why the electrical conductivity of intrinsic silicon

b) Calculate the density and ionic packing factor of FeO from

and germanium increases with increasing temperature.

the following data :

7+7+6=20
8.

Write short notes on (any four) :

i)

Radius of iron ion Fe2 + = 0.87A

554=20

Co-ordination Number

( )

ii) Vander Waals Bond.

Radius of oxygen ion O2 = 1.32A

iii) Mechanisms of diffusion

Atomic weight of iron = 55.85

iv) Efficiency of reinforcement for composite.

Atomic weight of oxygen = 16.00

v) Piezoelectricity

c) Diamond is a hard and insulating material, white graphite is

a soft and conducting material. Although both are made of

vi) Polymeric Alloys.

same carbon atoms. Explain.

vii) Rectifier diode.

viii)Dieelectric strength.

2.

4+10+6=20

a) What do you mean by activation energy ? Mention the

factors that influence the activation energy.

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b) Calculate the gime required to carburize a steel at 950oC and

4.

a) Show that the minimum cation-to anion radius ratio for the

with an initial composition of 0.25% carbon to 1.1% carbon

Co-ordination number 3 is 0.155. Why the layers of graphite

at a depth of 0.22 mm. Assume a constant surface

are able to slide passed each other.

concentration of 1.6% carbon due to carburizing

b) CdSe has the zinc blende crystal structure. Calculate the

atmosphere.
Given : Do = 0.7 104

density of CdSe.
2

Ionic radii are Cd2+ = 0.103nm and Se2 = 0.191nm.

m
kJ
J
; Q=157
; R=8.314
.
s
mol
mol.K

Mass of Cd = 112.40 gm/mol

z
0.25
0.30
0.35
0.40
0.45
erf ( z ) 0.2763 0.3286 0.3794 0.4284 0.4755

Mass of Se = 78.96 gm/mol.

5.

c) Explain the process of decarburisation of steel & its effect

on mechanical properties.
3.

a) Differentiate

between

8+12=20

addition

and

condensation

polymerisation.

4+12+4=20

b) Twenty grams of sulphur is added to 100 gm of isoprene

a) For a fibre-reinforced composite material, deduce the

rubber. What is the maximum fraction of cross-link sites

expression for composite elastic modulus under iso-stress

that could be connected. Structure is given below.

condition. Write down the assumptions required for

deduction.

H
|

CH3 H H
|
| |

|
H

|
H

C C = C C

b) Write a note on large-particle composite material.

c) For a fibre-reinforced composite, the modulus ratio is 20

c) Write structural formulas for the mers of the following :

and the matrix occupies 65% of the volume. Calculate the

modulus of the composite and stresses in the fibres and
matrix when 60 MPa tensile stress is applied longitudinally
to the composite. The modulus of the matrix is 6 MPa.
10+4+6=20

i)
6.

PVC

ii) PP

iii) PS

6+8+6=20

a) For a hypothecial semiconductor with n-type doping and

Eg=1eV, while Ed =0.9eV. The conductivity at room
temperature (25oC) is 100 1 .m1.
conductivity at 300oC. K=8.62

Calculate the

5 10

eVk1 .
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