Practice 8 - Group 02 - 7st November 2013 - period 2013/02.

Practice Report 8: Silicon Controlled Rectifier.

Edy Catalina Snchez Lpez.
Analog Electronics Laboratory II, School of Mechatronics, Faculty of Mines
National University of Colombia Medellin Campus

Resumen Con sta prctica se pretende estudiar las caractersticas principales de los rectificadores
controlados de Silicio (SCR), sus condiciones de conduccin y bloqueo, se establecer el valor real
medido de la corriente mnima de compuerta necesaria para activarlo.

Palabras Clave Compuerta, Conduccin, Corriente, Rectificador, Silicio.

Abstract With this practice is to study the main characteristics
of silicon controlled rectifiers (SCR), your blocking driving
conditions and will set the actual measured value of the minimum
current required to activate gate..
Index Terms Current, Driving, Gate, Rectifier, Silicon.
I.

INTRODUCTION

The SCR (Silicon Controlled Rectifier) is basically an

electronic switch, which closes when applied positive voltage
on its gate.
An SCR is a diode, but with a difference: As a diode is the
cathode and anode, and passes current in only one direction,
additionally has an additional terminal called gate. The gate is
used to trigger the SCR into the conducting state or on. Only
when the gate receives a positive voltage leads the SCR.
The SCR is, therefore, a device driver only in the first
quadrant of the curve, in which the trigger is caused by:
- Sufficiently high voltage applied between the anode and
cathode.
- Intensity at the door. Can be controlled and the required
voltage between anode and cathode for the transition OFF ON, using the appropriate gate current IG.
Then, although the suspension that voltage on the gate, the
SCR continues to conduct. The only way to stop driving is to
remove or change the voltage polarity positive in the anode.
Development
A. Theoretical Procedure
In Figure 1 shows the typical characteristic curve of a
thyristor SCR, represented anode current (It depending on the
applied voltage between anode and cathode (Vak). The direct
interpretation of the curve tells us the following: when the
voltage between the anode and cathode is zero anode current
so is. By increasing the voltage in the forward direction and
overcoming the blocking voltage (VBO) with zero gate
current, the thyristor is fired and the state transition OFF-ON
longer controlled. When this voltage is reached, there is an
increase in intensity at the anode, decreases the voltage

between the anode and cathode, thus behaving like a forward

biased diode.
If you want to fire the thyristor before reaching the
blocking voltage is necessary to increase the intensity of door
(IG1, IG2, IG3 ...), since thereby amending this ignition voltage.
That is to provide the device will seek the proper gate current
to the OFF-ON transition is made when the intensity exceeds
the intensity of anode latching.
Conversely, if the driving device is in the transition to the
"OFF" state occurs when the anode current drops below the
holding current intensity (IH).
For both the forward blocking state, and for the reverse
bias condition, there are some small leakage currents. When
reverse biased there is a weak inverse current (leakage) until it
reaches the point of maximum reverse voltage that causes the
destruction of the same.

Graph 1. Characteristic of a SCR with VBO=300v and IH=80mA.

The first circuit to be analyzed is:

Graph 2. IGT raised measuring circuit.

Practice 8 - Group 02 - 7st November 2013 - period 2013/02.

The third circuit to be analyzed is:
With this circuit will be measured IGT.
Its implementation in pspice is necessary to make it
descriptive mode because there is no component C106:
Vd 1 0 12
RP 1 2 170K
R1 2 3 100k
R2 3 4 100k
R3 4 5 100k
XT1 6 5 0 XC106D
RL 1 6 220
* C106D SCR A G K MCE 7-17-95
*MCE 400V 4A pkg:TO-225AA
.SUBCKT XC106D 1 2 3
QP 6 4 1 POUT OFF
QN 4 6 5 NOUT OFF
RF 6 4 88.9MEG
RR 1 4 59.2MEG
RGK 6 5 1.12K
RG 2 6 46.2
RK 3 5 16.2M
DF 6 4 ZF
DR 1 4 ZR
DGK 6 5 ZGK
.MODEL ZF D (IS=1.6F IBV=900N BV=400 RS=13.3MEG)
.MODEL ZR D (IS=1.6F IBV=900N BV=533)
.MODEL ZGK D (IS=1.6F IBV=900N BV=6)
.MODEL POUT PNP (IS=1.6P BF=1 CJE=418P)
.MODEL NOUT NPN (IS=1.6P BF=100 RC=65M
+ CJE=418P CJC=83.7P TF=214N TR=68U)
.ENDS XC106D
.TRAN 1u 1ms
.PROBE
.END

The second circuit to be analyzed is:

Graph 3. Posed to measure IH Circuit.

With this circuit will be measured IH.

Its implementation in pspice is necessary to make it
descriptive mode because there is no component C106:
Vd 1 0 12
RP 2 3 28.48K
R1 2 3 100k
R2 5 1 100k
R3 4 5 100k
XT1 3 4 0 XC106D
RL 1 2 220
* C106D SCR A G K MCE 7-17-95
*MCE 400V 4A pkg:TO-225AA
.SUBCKT XC106D 1 2 3
QP 6 4 1 POUT OFF
QN 4 6 5 NOUT OFF
RF 6 4 88.9MEG
RR 1 4 59.2MEG
RGK 6 5 1.12K
RG 2 6 46.2
RK 3 5 16.2M
DF 6 4 ZF
DR 1 4 ZR
DGK 6 5 ZGK
.MODEL ZF D (IS=1.6F IBV=900N BV=400 RS=13.3MEG)
.MODEL ZR D (IS=1.6F IBV=900N BV=533)
.MODEL ZGK D (IS=1.6F IBV=900N BV=6)
.MODEL POUT PNP (IS=1.6P BF=1 CJE=418P)
.MODEL NOUT NPN (IS=1.6P BF=100 RC=65M
+ CJE=418P CJC=83.7P TF=214N TR=68U)
.ENDS XC106D
.TRAN 1u 1ms
.PROBE
.END

Graph 4. Half-wave controlled rectifier.

With this circuit will be measured the firing angle.

Its implementation in pspice is necessary to make it
descriptive mode because there is no component C106:
Vi 1 0 sin(0 12 60)
RL 1 2 220
XT1 2 3 0 XC106D
R1 2 4 100k
D1 5 3 D1N4148
RP 4 5 100K
.model D1N4148 D(Is=5.84n N=1.94 Rs=.7017 Ikf=44.17m
Xti=3 Eg=1.11 Cjo=.95p
+ M=.55 Vj=.75 Fc=.5 Isr=11.07n Nr=2.088 Bv=100
Ibv=100u Tt=11.07n)
* C106D SCR A G K MCE 7-17-95
*MCE 400V 4A pkg:TO-225AA
.SUBCKT XC106D 1 2 3
QP 6 4 1 POUT OFF
QN 4 6 5 NOUT OFF
RF 6 4 88.9MEG
RR 1 4 59.2MEG
RGK 6 5 1.12K
RG 2 6 46.2
RK 3 5 16.2M
DF 6 4 ZF
DR 1 4 ZR
DGK 6 5 ZGK
.MODEL ZF D (IS=1.6F IBV=900N BV=400 RS=13.3MEG)
.MODEL ZR D (IS=1.6F IBV=900N BV=533)
.MODEL ZGK D (IS=1.6F IBV=900N BV=6)
.MODEL POUT PNP (IS=1.6P BF=1 CJE=418P)
.MODEL NOUT NPN (IS=1.6P BF=100 RC=65M
+ CJE=418P CJC=83.7P TF=214N TR=68U)
.ENDS XC106D
.TRAN 1u 6ms
.PROBE
.END

After having this information design must take into account

the characteristics provided by the manufacturer:
C106D features are:
feature
Gate Trigger Current
(Continuous dc)
(Note 4)
(VAK = 6 Vdc, RL = 100
_)
TJ = 25C
TJ = 40C
Holding Current (VD =
12 Vdc)
(Initiating Current = 20
mA, RGK = 1 k_)
TJ = 25C
TJ = 40C
TJ = +110C
On-State RMS Current
(180Conduction
Angles, TC = 80C)

Smb

Mn

Typ

Mx

unit

IGT

15
35

200
500

IH

0.19
0.33
0.07

3.0
6.0
2.0

mA

IT(R

4.0

MS)

Chart 1: C106D thyristor parameters.

Practice 8 - Group 02 - 7st November 2013 - period 2013/02.

The equations describing this type of rectifier and linking the
shooting angle and the value of the potentiometer are:

the current. Disconnection was performed resistor R1 at the

Gate before the LED goes off and modified the value of the
resistance of the potentiometer.

(1)
3.

Third Circuit:

(2)
(3)

For this assembly, we used 200k potentiometer.

Measurement was performed tripping time for various values
of resistance of the potentiometer.

(4)

II. EXPERIMENTAL RESULTS

(5)

B. Simulation
For the circuits of Graphs 2 and 3 simulation is not performed
because what is sought is an experimental value of the
currents.
For the circuit of Graph 2, IGT has a value of 29,912 uA.
For the circuit of Graph 3, IH takes a value of 2,448 mA.
For the circuit of Graph 4 is performed pspice simulation and
is obtained:

1.

First Circuit:

Measuring the voltage at R3 which is 1,948 V, therefore it can

be said that the current is 19.48 uA. These values were
obtained with an input voltage of 7 V and the resistance of
120 k potentiometer. From this assembly no data collected
on the oscilloscope.
When this circuit is implemented, the results were not as
expected, we could not have a visual effect on the LED (to
detect when the thyristor is in conduction), the problem was
corrected by decreasing the value of the initial voltage of 12 V
to 7 V, that is we had to decrease the current IGT to turn on the
device. In order to measure the real value of the gate current
potentiometer is adjusted to its maximum value and the source
went on, at this point the LED was off, but as he turned the
knob to a small value LED lit, indicating that the driving
thyristor.
2.

Graph 5. Simulation half-wave controlled rectifier.

With this graph can be calculated:

td = 2ms y = 318,31u
It is noted that the figure shows the shape of a half wave,
failing to deliver to the load waveform is always positive.
C. Mounting.
1.

For assembly, we used 200 k potentiometer and an LED

light placed in series with the thyristor to observe the effect of
the current. Disconnection was performed resistor R1 at the
Gate before the LED goes off and modified the value of the
resistance of the potentiometer. From this assembly no data
collected on the oscilloscope
3.

Third Circuit:

For this assembly, we used the potentiometer 200 k.

Measurement was performed tripping time for various values
of resistance of the potentiometer.

First Circuit:

Proceed with the assembly, was used 200 k potentiometer

and an LED light placed in series with the thyristor to observe
the effect of the current. The initial value of the potentiometer
is the maximum and is modified until the LED lights.
2.

Second Circuit:

Second Circuit:

For fitting, we used the 200k potentiometer and an LED

light placed in series with the thyristor to observe the effect of

For a value of 6.8 potentiometer resistance was

obtained:
Trip time = 2.5 ms * 1div = 2.5 ms
Firing angle = 0.94 rad 54

Practice 8 - Group 02 - 7st November 2013 - period 2013/02.

Graph 6. Mounting to 6.8 .

Graph 9. Mounting to 270 k.

Graph 7. Mounting expanded to 6.8 .

Graph 10. Assembly expanded to 270 k.

For a value of 133 kOhm potentiometer resistance

was obtained:
Trip time = 1.0 ms * 1.6 div = 1.6 ms
Firing angle = 0.603 rad 34.56

III. CONCLUSIONS

Graph 8. Mounting to 133 k.

For a value of 270 kOhm potentiometer resistance

was obtained:
Trip time = 1.0 ms * 0.8 div = 0.8 ms
Firing angle = 0.3015 rad 17.28

It can be concluded that when the current through the

device falls below the measured value of IH, the thyristor
enters the blocking zone, these estimated values are
within the ranges of the datasheet but how to estimate
them is somewhat inaccurate given the way even
indirectly as measured using the 200K potentiometer.
Keep in mind that when using a potentiometer measuring
the data is inaccurate because this device has a fast
variation in their range which substantially modifies the
actual values of the measurements that you want to take.
It was also concluded that increasing enough load
resistance, IGT will fall below its minimum value and the
thyristor is blocked, corroborating the operating curve
shown in the guide device.
It can be seen that the silicon controlled rectifier (SCR) in
practice behaves like a switch (a bistable device) leads or
is in lock. And they are potentially of great importance to
change the values of load average DC changing the
shooting angle, which in turn is modified by IGT.
It was also noted that yields a maximum average voltage
at the load when the firing angle is 0 condition achieved
when the potentiometer R is the maximum because it is
limited enough current through the device triggering door

Practice 8 - Group 02 - 7st November 2013 - period 2013/02.

roping in this case the thyristor is the typical half-wave

rectifier, the DC voltage drop with increasing the firing
angle.
You can see that the firing angle is difficult to measure
with the oscilloscope because this does not allow an
appropriate measure for the theoretical value, yet he
obtained an experimental value (in time), which is not too
far from the value theoretical thus validates practice.
We conclude that the thyristor is a device swiching: while
in conducting state has a very low resistance that allows
high levels of current loop with a voltage drop of about
1V, and while in non-conducting state is behaves like an
almost perfect open circuit passes only a few amperes
peak.
One can also conclude that the main advantage presented
by the thyristor against the diodes is that when they are
used as rectifiers entry into conduction is controlled by
the gate signal, thus it can vary the output voltage if
varying the time of shooting (getting different angles
driving). Besides the thyristor will automatically lock to
change the alternating positive and negative at the
moment start receiving reverse voltage.

Graphics, Charts and Equations.

A. Graphics.

Graph 1. Characteristic of a SCR with VBO=300v and

IH=80mA.
Graph 2. IGT raised measuring circuit.
Graph 3. Posed to measure IH Circuit.
Graph 4. Half-wave controlled rectifier.
Graph 5. Simulation half-wave controlled rectifier.
Graph 6. Mounting to 6.8 .
Graph 7. Mounting expanded to 6.8 .
Graph 8. Mounting to 133 K.
Graph 9. Mounting to 270 K.
Graph 10. Assembly expanded to 270 K.
Ecuaciones.
(1)
(2)
(3)
(4)
(5)

Initial Equation mesh.

Equation of VAK.
Equation of VA.
Equation of VRL.
Equation VRLprom.

B. Charts.

Chart 1. C106D thyristor parameters..

REFERECES

[1]

[2]

[3]

[4]

Fundamentos de Electrnica Industrial.

URL:
http://repository.upb.edu.co:8080/jspui/bitstream/123456789/74/1/Fund
amentos%20de%20Electr%C3%B3nica%20Industrial%20%20Hern%C3%A1n%20Valencia%20Gall%C3%B3n.pdf
Tiristores unidireccionales.
URL:
http://www.oocities.org/es/jeduardotrellest/m6_tiristores_unidireccional
es.pdf.
Rectificador controlado de Silicio Tiristor.
URL:
http://apuntesdeelectronica.files.wordpress.com/2011/10/15tiristor.pdf
Sensitive
Gate
Silicon
Controlled Rectifiers Reverse
Blocking Thyristors, C106D.
URL: http://www.datasheetcatalog.com/datasheets_pdf/C/1/0/6/C106D.shtml

Edy Catalina Snchez Lpez: 43272061, Group 2, Control

Engineering.