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BF2040...

Silicon N-Channel MOSFET Tetrode


For low noise , high gain controlled
input stages up to 1GHz
Operating voltage 5 V
Pb-free (RoHS compliant) package
Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

Pin Configuration

Marking

BF2040

SOT143

1=S

2=D

3=G2

4=G1

NFs

BF2040R

SOT143R

1=D

2=S

3=G1

4=G2

NFs

BF2040W

SOT343

1=D

2=S

3=G1

4=G2

NFs

Maximum Ratings
Parameter

Symbol

Drain-source voltage

VDS

Continuous drain current

ID

40

Gate 1/ gate 2-source current

IG1/2SM

10

Gate 1 (external biasing)

+VG1SE

Total power dissipation

Ptot

Value
8

Unit
V
mA
V
mW

TS 76 C, BF2040, BF2040R

200

TS 94 C, BF2040W

200

Storage temperature

Tstg

-55 ... 150

Channel temperature

Tch

150

Thermal Resistance
Parameter

Symbol

Channel - soldering point1)

Rthchs

Value

K/W

BF2040, BF2040R

370

BF2040W

280

1For

Unit

calculation of RthJA please refer to Application Note Thermal Resistance

2007-06-01

BF2040...

Electrical Characteristics at TA = 25C, unless otherwise specified


Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)DS

10

+V(BR)G1SS

15

+V(BR)G2SS

15

+IG1SS

50

+IG2SS

50

IDSS

50

IDSX

15

mA

VG1S(p)

0.3

0.6

VG2S(p)

0.3

0.7

DC Characteristics
Drain-source breakdown voltage

ID = 20 A, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current

nA

VG1S = 5 V, VG2S = 0 , VDS = 0


Gate2-source leakage current
VG2S = 5 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, R G1 = 100 k
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 A
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 A

2007-06-01

BF2040...
Electrical Characteristics at TA = 25C, unless otherwise specified
Symbol

Parameter

Values

Unit

min.

typ.

max.

37

42

mS

Cg1ss

2.9

3.4

pF

Cdss

1.6

20

23

dB

1.6

2.2

dB

45

50

AC Characteristics - (verified by random sampling)


Forward transconductance

gfs

VDS = 5 V, ID = 15 mA, VG2S = 4 V


Gate1 input capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 10 MHz
Output capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 10 MHz
Power gain

Gp

VDS = 5 V, ID = 15 mA, VG2S = 4 V,


f = 800 MHz
Noise figure

VDS = 5 V, ID = 15 mA, VG2S = 4 V,


f = 800 MHz
Gp

Gain control range


VDS = 5 V, VG2S = 4 ...0 V , f = 800 GHz

2007-06-01

BF2040...
Total power dissipation P tot = (TS)

Total power dissipation P tot = (TS)

BF2040, BFD2040R

BF2040W

220

220
mA

180

180

160

160

Ptot

Ptot

mW

140

140

120

120

100

100

80

80

60

60

40

40

20

20

0
0

15

30

45

60

75

90 105 120 C

0
0

150

15

30

45

60

75

90 105 120 C

TS

150

TS

Drain current ID = (IG1 )

Output characteristics ID = (VDS )

VG2S = 4V

VG2S = 4 V

28
mA

26
mA

24

22

22

20

20

18

18

ID

ID

VG1S = Parameter

16

1.3V

16
14

14

1.2V

12

12

10

10

1.1V

1V

6
4

0
0

1.4V

10

20

30

40

50

60

70

0
0

90

IG1

10

VDS

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BF2040...
Gate 1 current IG1 = (VG1S)

Gate 1 forward transconductance

VDS = 5V

gfs = (ID)
VDS = 5V, VG2S = Parameter

VG2S = Parameter
195
A

45
mS

4V

4V

165
35

150

gfs

135

IG1

3.5V

3.5V

120
105

30

3V

25

3V

90

2.5V

20

2V

75
15

2.5V

60
45

10
2V

30

15
0
0

0.4

0.8

1.2

1.6

2.4

0
0

3.2

12

16

20

24

28

32 mA

VG1S

40

ID

Drain current ID = (VG1S )

Drain current ID = (VGG )

VDS = 5V

VDS = 5V, VG2S = 4V, RG1 = 80k

VG2S = Parameter

(connected to VGG, VGG=gate1 supply voltage)


16

28
mA

4V

mA
3V

24
22

12

18

ID

ID

20
10

16
2V

14

12
6

10
8

1.5V

6
4

2
0
0

0.2 0.4 0.6 0.8

1.2 1.4 1.6

0
0

VG1S

VGG

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BF2040...
Drain current ID = (VGG)

Crossmodulation Vunw = (AGC)

VG2S = 4V

VDS = 5 V

RG1 = Parameter in k
120

28
mA

70

24

dBV

80

22

18

Vunw

ID

110

90

20

110

105

16
130

14

100

12
95

10
8

90

6
4

85

2
0
0

80
0

VGG=VDS

10

15

20

25

30

35

40 dB

50

AGC

2007-06-01

BF2040...
Cossmodulation test circuit

VAGC

VDS
4n7

R1
10k

2.2 uH

4n7

4n7
RL
50

RGEN
50

4n7
50

RG1

VGG

Semibiased

2007-06-01

Package SOT143

BF2040...

0.1 MAX.

10 MAX.

1 0.1

0.2
0.8 +0.1
-0.05
0.4 +0.1
-0.05

0...8
0.2 M A

0.25 M B

1.7

0.08...0.1

1.3 0.1

2.4 0.15

10 MAX.

2.9 0.1
1.9

0.15 MIN.

Package Outline

Foot Print

1.2

0.8

0.9

1.1

0.9

0.8 1.2 0.8

0.8

Marking Layout (Example)

RF s

56

Manufacturer

Pin 1

2005, June
Date code (YM)

BFP181
Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel
Reel 330 mm = 10.000 Pieces/Reel

0.2

2.6
8

Pin 1

3.15

1.15

2007-06-01

Package SOT143R

BF2040...

Package Outline

2
0.2

0.08...0.15

+0.1
0.8 -0.05

0.4 +0.1
-0.05

0... 8
1.7

0.25

10 MAX.
1.3 0.1

2.4 0.15

0.1 MAX.

10 MAX.

1.9
4

1 0.1

0.15 MIN.

2.9 0.1

0.2

Foot Print
1.2

0.8

0.9

1.1

0.9

0.8

0.8

0.8

1.2

Marking Layout (Example)


Reverse bar

2005, June
Date code (YM)

Pin 1

Manufacturer
BFP181R
Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel
Reel 330 mm = 10.000 Pieces/Reel
0.2

2.6

Pin 1

3.15

1.15

2007-06-01

Package SOT343

BF2040...

Package Outline
0.9 0.1

2 0.2
0.1 MAX.

1.3

0.1
A

0.1 MIN.

0.15

1.25 0.1

3
2.1 0.1

0.3 +0.1
-0.05

+0.1

0.15 -0.05
0.6 +0.1
-0.05

4x
0.1

0.2

Foot Print

1.6

0.8

0.6

1.15
0.9

Marking Layout (Example)


Manufacturer

2005, June
Date code (YM)

BGA420
Type code

Pin 1

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel
Reel 330 mm = 10.000 Pieces/Reel
0.2

2.3

Pin 1

2.15

1.1

10

2007-06-01

BF2040...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 2007.
All Rights Reserved.

Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (Beschaffenheitsgarantie). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.

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