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NPN Transistor
MAT12
Data Sheet
PIN CONFIGURATION
C1 1
B1 2
C2
5
E1 3
B2
E2
NOTE
1. SUBSTRATE IS CONNECTED
TO CASE ON TO-78 PACKAGE.
2. SUBSTRATE IS NORMALLY
CONNECTED TO THE MOST
NEGATIVE CIRCUIT POTENTIAL,
BUT CAN BE FLOATED.
09044-001
FEATURES
GENERAL DESCRIPTION
The MAT12 is a dual, NPN-matched transistor pair that is
specifically designed to meet the requirements of ultralow
noise audio systems.
With its extremely low input base spreading resistance (rbb'
is typically 28 ) and high current gain (hFE typically exceeds
600 at IC = 1 mA), the MAT12 can achieve outstanding signalto-noise ratios. The high current gain results in superior
performance compared to systems incorporating commercially
available monolithic amplifiers.
Excellent matching of the current gain (hFE) to about 0.5%
and low VOS of less than 10 V typical make the MAT12 ideal
for symmetrically balanced designs, which reduce high-order
amplifier harmonic distortion.
Rev. A
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Data Sheet
MAT12: Audio, Dual-Matched NPN Transistor Data Sheet
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MAT12
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................4
Specifications..................................................................................... 3
REVISION HISTORY
1/14Rev. 0 to Rev. A
Change to Gain Bandwidth Product Parameter ........................... 3
7/10Revision 0: Initial Version
Rev. A | Page 2 of 12
Data Sheet
MAT12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VCB = 15 V, IO = 10 A, TA = 25C, unless otherwise specified.
Table 1.
Parameter
DC AND AC CHARACTERISTICS
Current Gain 1
Symbol
Test Conditions/Comments
Min
Typ
hFE
IC = 1 mA
40C TA +85C
IC = 10 A
40C TA +85C
10 A IC 1 mA
IC = 1 mA, VCB = 0 V
fO = 10 Hz
fO = 100 Hz
fO = 1 kHz
fO = 10 kHz
IC = 1 mA
VCB = 0 V, IC = 1 mA
40C TA +85C
0 V VCB VMAX 4,1 A IC 1 mA 5
1 A IC 1 mA5, VCB = 0 V
40C TA +85C
40C TA +85C, VOS trimmed to 0 V
300
300
200
200
605
hFE
eN
eN p-p
VOS
VOS/VCB
VOS/IC
VOS/T
BVCEO
fT
ICBO
ICC
ICES
IB
IOS
IOS/T
VCE (SAT)
COB
RBE
CCC
Max
Unit
0.5
1.6
0.9
0.85
0.85
0.4
10
2
1
1
1
nV/Hz
nV/Hz
nV/Hz
nV/Hz
V p-p
V
V
V
V
V/C
V/C
V
MHz
pA
nA
pA
nA
pA
nA
nA
nA
nA
nA
pA/C
V
pF
pF
550
10
5
0.08
0.03
200
220
50
70
1
0.3
40
IC = 10 mA, VCE = 10 V
VCB = VMAX
40C TA +85C
VCC = VMAX
40C TA +85C
VCE = VMAX, VBE = 0 V
40C TA +85C
IC = 10 A
40C TA +85C
IC = 10 A
40C TA +85C
IC = 10 A, 40C TA +85C
IC = 1 mA, IB = 100 A
VCB = 15 V, IE = 0 A
10 A IC 10 mA
VCC = 0 V
Current gain is guaranteed with collector-to-base voltage (VCB) swept from 0 V to VMAX at the indicated collector currents.
Current gain match (hFE) is defined as follows: hFE = (100(IB)(hFE min)/IC).
3
Noise voltage density is guaranteed, but not 100% tested.
4
This is the maximum change in VOS as VCB is swept from 0 V to 40 V.
5
Measured at IC = 10 A and guaranteed by design over the specified range of IC.
6
Guaranteed by design.
7
ICC and ICES are verified by the measurement of ICBO.
1
2
Rev. A | Page 3 of 12
200
25
3
35
4
35
4
40
0.05
23
0.3
35
500
500
500
50
50
6.2
13
150
0.2
1.6
MAT12
Data Sheet
Table 2.
Parameter
Breakdown Voltage of
Collector-to-Base Voltage (BVCBO)
Breakdown Voltage of
Collector-to-Emitter Voltage (BVCEO)
Breakdown Voltage of
Collector-to-Collector Voltage (BVCC)
Breakdown Voltage of
Emitter-to-Emitter Voltage (BVEE)
Collector Current (IC)
Emitter Current (IE)
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
40 V
40 V
Package Type
6-Lead TO-78
40 V
40 V
ESD CAUTION
20 mA
20 mA
65C to +150C
40C to +85C
65C to +150C
300C
Rev. A | Page 4 of 12
JA
150
JC
45
Unit
C/W
Data Sheet
MAT12
800
TA = +125C
700
TA = +25C
600
500
400
TA = 55C
300
M4.00s
A CH1
15.8V
100
0.001
0.01
0.1
09044-005
CH1 2.00V
09044-002
200
1k
1mA
700
100
800
IC = 1A TEST
10
IC = 10A TEST
IC = 1mA TEST
600
500
400
300
1A
200
10
100
1k
10k
100k
FREQUENCY (Hz)
0
100
09044-003
0.1
0.1
50
50
100
150
TEMPERATURE (C)
09044-006
100
100
0.65
60
RS = 100k
40
RS = 10k
0.01
0.55
VCE = 5V
0.50
0.45
0.40
0.35
RS = 1k
0
0.001
0.60
0.1
0.30
0.001
0.01
0.1
Rev. A | Page 5 of 12
10
09044-007
20
09044-004
80
Data Sheet
100
1000
10
100
1
VCE = 5V
0.1
10
0.1
0.01
0.01
0.1
10
0.01
25
09044-008
0.001
0.001
125
100
75
50
TEMPERATURE (C)
09044-010
MAT12
40
1m
CAPACITANCE, C CB (pF)
CONDUCTANCE, h OE (mho)
35
0.1m
0.01m
VCE = 5V
1
30
25
20
15
10
0.1
0.01
0.1
10
100
09044-009
0.01
0.001
1000
10
20
30
40
50
09044-011
40
100
CAPACITANCE, C CC (pF)
TA = +125C
10
TA = +25C
1
0.1
30
25
20
15
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
0
10
20
30
40
Rev. A | Page 6 of 12
50
09044-012
5
0.01
09044-018
35
TA = 55C
Data Sheet
MAT12
1000
4.0
COLLECTOR-TO-COLLECTOR
CAPACITANCE, C CC (pF)
COLLECTOR-TO-COLLECTOR
LEAKAGE CURRENT, ICC (nA)
3.5
100
10
0.1
3.0
2.5
2.0
1.5
1.0
50
75
100
125
TEMPERATURE (C)
09044-013
0.01
25
10
20
30
40
50
09044-014
0.5
Rev. A | Page 7 of 12
MAT12
Data Sheet
APPLICATIONS INFORMATION
To compensate for the temperature dependence of the kT/q term, a
resistor with a positive 0.35%/C temperature coefficient is selected
for R2. The output is inverted with respect to the input and is
nominally 1 V/decade using the component values indicated.
+15V
VIN
(0V TO 10V)
RS
4k
8
AD8512
VO
3
4
15V
330pF
R3
7.5k
MAT12
330pF
VREF
10V
R1
4k
6
1/2
AD8512
4k
R2
500
R2 = 0.35%/C
09044-015
VO =
Rev. A | Page 8 of 12
Data Sheet
MAT12
Because IC1 is made equal to 10 IC2, and assuming TA = 25C,
Equation 2 becomes
61.0
kT I C
ln
q
IS
(1)
58.5
rBE =
(2)
IC1
9 mA 100
(3)
SIDE A DUT
Q1
V
+ BE +15V
1/2
AD8512
100pF
VCC
VO
500
1N914
+15V
15V
100pF
AV = 100
AMP02
VOUT = 100VBE
15V
1k
IC2
1/2
AD8512
500
15V
1N914
+
+15V
VBE
Q2
SIDE B DUT
09044-017
1k
100
10
I
kT
= ln C1 + I C1rBE1 I C2 rBE2
q
I C2
59.5
59.0
where:
k is Boltzmanns constant (1.38062 1023 J/K).
q is the unit electron charge (1.60219 1019C).
T is the absolute temperature, K (= C + 273.2).
IS is the extrapolated current for VBE 0 (VBE tending to zero).
IC is the collector current.
VBE =
60.0
09044-016
V BE =
60.5
Rev. A | Page 9 of 12
MAT12
Data Sheet
OUTLINE DIMENSIONS
0.185 (4.70)
0.165 (4.19)
REFERENCE PLANE
0.750 (19.05)
0.500 (12.70)
0.250 (6.35) MIN
0.100 (2.54) BSC
0.050 (1.27) MAX
0.160 (4.06)
0.110 (2.79)
0.335 (8.51)
0.305 (7.75)
0.370 (9.40)
0.335 (8.51)
0.200
(5.08)
BSC
0.045 (1.14)
0.027 (0.69)
2
0.019 (0.48)
0.016 (0.41)
0.100
(2.54)
BSC
0.021 (0.53)
0.016 (0.41)
1
0.034 (0.86)
0.027 (0.69)
45
BSC
022306-A
ORDERING GUIDE
Model 1
MAT12AHZ
1
Temperature Range
40C to +85C
Package Description
6-Pin Metal Header Package [TO-78]
Rev. A | Page 10 of 12
Package Option
H-06
Data Sheet
MAT12
NOTES
Rev. A | Page 11 of 12
MAT12
Data Sheet
NOTES
Rev. A | Page 12 of 12