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STM32F103xB
Medium-density performance line ARM-based 32-bit MCU with 64
or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces
Datasheet - production data
Features
ARM 32-bit Cortex-M3 CPU Core
72 MHz maximum frequency,
1.25 DMIPS/MHz (Dhrystone 2.1)
performance at 0 wait state memory
access
Single-cycle multiplication and hardware
division
Memories
64 or 128 Kbytes of Flash memory
20 Kbytes of SRAM
Clock, reset and supply management
2.0 to 3.6 V application supply and I/Os
POR, PDR, and programmable voltage
detector (PVD)
4-to-16 MHz crystal oscillator
Internal 8 MHz factory-trimmed RC
Internal 40 kHz RC
PLL for CPU clock
32 kHz oscillator for RTC with calibration
Low power
Sleep, Stop and Standby modes
VBAT supply for RTC and backup registers
2 x 12-bit, 1 s A/D converters (up to 16
channels)
Conversion range: 0 to 3.6 V
Dual-sample and hold capability
Temperature sensor
DMA
7-channel DMA controller
Peripherals supported: timers, ADC, SPIs,
I2Cs and USARTs
Up to 80 fast I/O ports
26/37/51/80 I/Os, all mappable on 16
external interrupt vectors and almost all
5 V-tolerant
August 2013
This is information on a product in full production.
VFQFPN36 6 6 mm
BGA100 10 10 mm
UFBGA100 7 x 7 mm
BGA64 5 5 mm
UFQFPN48 7 7 mm
LQFP100 14 14 mm
LQFP64 10 10 mm
LQFP48 7 7 mm
Debug mode
Serial wire debug (SWD) & JTAG
interfaces
7 timers
Three 16-bit timers, each with up to 4
IC/OC/PWM or pulse counter and
quadrature (incremental) encoder input
16-bit, motor control PWM timer with deadtime generation and emergency stop
2 watchdog timers (Independent and
Window)
SysTick timer 24-bit downcounter
Up to 9 communication interfaces
Up to 2 x I2C interfaces (SMBus/PMBus)
Up to 3 USARTs (ISO 7816 interface, LIN,
IrDA capability, modem control)
Up to 2 SPIs (18 Mbit/s)
CAN interface (2.0B Active)
USB 2.0 full-speed interface
CRC calculation unit, 96-bit unique ID
Packages are ECOPACK
Table 1. Device summary
Reference
Part number
STM32F103x8
STM32F103C8, STM32F103R8
STM32F103V8, STM32F103T8
STM32F103xB
STM32F103RB STM32F103VB,
STM32F103CB, STM32F103TB
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www.st.com
Contents
STM32F103x8, STM32F103xB
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.1
Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2
2.3
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.3.1
2.3.2
2.3.3
2.3.4
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.3.5
2.3.6
2.3.7
2.3.8
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.3.9
2.3.10
2.3.11
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3.12
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3.13
DMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.14
2.3.15
2.3.16
IC bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.3.17
2.3.18
2.3.19
2.3.20
2.3.21
2.3.22
2.3.23
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.3.24
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
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Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.1
Contents
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.1.1
5.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
5.1.5
5.1.6
5.1.7
5.2
5.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.3.6
5.3.7
5.3.8
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.9
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.10
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.3.11
5.3.12
5.3.13
5.3.14
5.3.15
5.3.16
Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.3.17
5.3.18
5.3.19
Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.1
6.2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.2.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.2.2
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Contents
STM32F103x8, STM32F103xB
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
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List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
STM32F103xx medium-density device features and peripheral counts . . . . . . . . . . . . . . . 10
STM32F103xx family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Medium-density STM32F103xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 40
Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Maximum current consumption in Run mode, code with data processing
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Maximum current consumption in Run mode, code with data processing
running from RAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Maximum current consumption in Sleep mode, code running from Flash or RAM. . . . . . . 44
Typical and maximum current consumptions in Stop and Standby modes . . . . . . . . . . . . 45
Typical current consumption in Run mode, code with data processing
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Typical current consumption in Sleep mode, code running from Flash or
RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
HSE 4-16 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
SCL frequency (fPCLK1= 36 MHz.,VDD_I2C = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
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6
List of tables
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
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8
List of figures
Figure 43.
Figure 44.
Figure 45.
Figure 46.
Figure 47.
Figure 48.
Figure 49.
Figure 50.
Figure 51.
Figure 52.
Figure 53.
Figure 54.
Figure 55.
Figure 56.
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STM32F103x8, STM32F103xB
Introduction
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32F103x8 and STM32F103xB medium-density performance line microcontrollers.
For more details on the whole STMicroelectronics STM32F103xx family, please refer to
Section 2.2: Full compatibility throughout the family.
The medium-density STM32F103xx datasheet should be read in conjunction with the low-,
medium- and high-density STM32F10xxx reference manual.
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex-M3 core please refer to the Cortex-M3 Technical
Reference Manual, available from the www.arm.com website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.ddi0337e/.
Description
The STM32F103xx medium-density performance line family incorporates the highperformance ARM Cortex-M3 32-bit RISC core operating at a 72 MHz frequency, highspeed embedded memories (Flash memory up to 128 Kbytes and SRAM up to 20 Kbytes),
and an extensive range of enhanced I/Os and peripherals connected to two APB buses. All
devices offer two 12-bit ADCs, three general purpose 16-bit timers plus one PWM timer, as
well as standard and advanced communication interfaces: up to two I2Cs and SPIs, three
USARTs, an USB and a CAN.
The devices operate from a 2.0 to 3.6 V power supply. They are available in both the 40 to
+85 C temperature range and the 40 to +105 C extended temperature range. A
comprehensive set of power-saving mode allows the design of low-power applications.
The STM32F103xx medium-density performance line family includes devices in six different
package types: from 36 pins to 100 pins. Depending on the device chosen, different sets of
peripherals are included, the description below gives an overview of the complete range of
peripherals proposed in this family.
These features make the STM32F103xx medium-density performance line microcontroller
family suitable for a wide range of applications such as motor drives, application control,
medical and handheld equipment, PC and gaming peripherals, GPS platforms, industrial
applications, PLCs, inverters, printers, scanners, alarm systems, video intercoms, and
HVACs.
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104
Description
2.1
STM32F103x8, STM32F103xB
Device overview
Table 2. STM32F103xx medium-density device features and peripheral
counts
Peripheral
Flash - Kbytes
Communication
Timers
SRAM - Kbytes
STM32F103Tx
64
128
STM32F103Cx
64
128
STM32F103Rx
64
128
STM32F103Vx
64
128
20
20
20
20
General-purpose
Advanced-control
SPI
I2C
USART
USB
CAN
26
37
51
80
2
10 channels
2
10 channels
2
16 channels(1)
2
16 channels
GPIOs
12-bit synchronized ADC
Number of channels
CPU frequency
72 MHz
Operating voltage
Operating temperatures
Packages
2.0 to 3.6 V
Ambient temperatures: -40 to +85 C / -40 to +105 C (see Table 9)
Junction temperature: -40 to + 125 C (see Table 9)
VFQFPN36
LQFP48,
UFQFPN48
LQFP64,
TFBGA64
LQFP100,
LFBGA100,
UFBGA100
1. On the TFBGA64 package only 15 channels are available (one analog input pin has been replaced by
Vref+).
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STM32F103x8, STM32F103xB
Description
Trace
Controlle r
pbu s
Trace/trig
flash obl
Inte rfac e
Ibus
Cortex-M3 CPU
Fmax : 7 2M Hz
Dbus
Syst em
NVIC
@VDDA
SUPPLY
SUPERVISION
NRST
VDDA
VSSA
Rst
PVD
Int
PCLK1
PCLK2
HCLK
FCLK
AHB2
APB2
@VDD
PLL &
CLOCK
MANAGT
XTAL OSC
4-16 MHz
GPIOA
GPIOB
PC[15:0]
GPIOC
PD[15:0]
GPIOD
PE[15:0]
GPIOE
4 Chann els
3 co mpl. Chann els
ETR and BKIN
TIM1
MOSI,MISO,
SCK,NSS as AF
SPI1
IWDG
Stand by
in terface
@VDDA
AHB2
APB 1
RTC
AWU
Back up
reg
12bi t ADC2 IF
TAMPER-RTC
TIM2
4 Chann els
TIM3
4 Chann els
TIM 4
4 Chann els
USART2
USART3
2x(8x16bit)SPI2
MOSI,MISO,SCK,NSS
as AF
I2C1
SCL,SDA,SMBA
as AF
I2C2
SCL,SDA
as AF
bx CAN
USB 2.0 FS
VREF-
OSC32_IN
OSC32_OUT
USART1
12bit ADC1 IF
VBAT
@VBAT
@VDDA
16AF
VREF+
OSC_IN
OSC_OUT
RC 8 MHz
RC 40 kHz
EXTI
WAKEUP
PA[ 15:0]
VDD = 2 to 3.6V
VSS
@VDD
64 bit
XTAL 32 kHz
PB[ 15:0]
Flash 128 KB
80AF
POR / PDR
VOLT. REG.
3.3V TO 1.8V
SRAM
20 KB
GP DMA
7 ch annels
POWER
NJTRST
TRST
JTDI
JTCK/SWCLK
JTMS/SWDIO
JTDO
as AF
BusM atrix
TRACECLK
TRACED[0:3]
as AS
USBDP/CAN_TX
USBDM/CAN_RX
SRAM 512B
WWDG
Temp sensor
ai14390d
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Description
STM32F103x8, STM32F103xB
Figure 2. Clock tree
FLITFCLK
to Flash programming interface
8 MHz
HSI RC
HSI
USB
Prescaler
/1, 1.5
/2
USBCLK
to USB interface
48 MHz
72 MHz max
PLLSRC
/8
SW
PLLMUL
HSI
..., x16
x2, x3, x4
PLL
SYSCLK
AHB
Prescaler
72 MHz
/1, 2..512
max
PLLCLK
Clock
Enable (3 bits)
APB1
Prescaler
/1, 2, 4, 8, 16
HCLK
to AHB bus, core,
memory and DMA
to Cortex System timer
FCLK Cortex
free running clock
36 MHz max
PCLK1
to APB1
peripherals
Peripheral Clock
HSE
to TIM2, 3
TIM2,3, 4
and 4
If (APB1 prescaler =1) x1
TIMXCLK
else
x2 Peripheral Clock
CSS
Enable (3 bits)
APB2
Prescaler
/1, 2, 4, 8, 16
PLLXTPRE
OSC_OUT
OSC_IN
4-16 MHz
72 MHz max
HSE OSC
/2
TIM1 timer
to TIM1
If (APB2 prescaler =1) x1
TIM1CLK
else
x2 Peripheral Clock
/128
OSC32_IN
OSC32_OUT
LSE OSC
32.768 kHz
Peripheral Clock
Enable (11 bits)
PCLK2
to APB2
peripherals
to RTC
LSE
RTCCLK
ADC
Prescaler
/2, 4, 6, 8
Enable (1 bit)
to ADC
ADCCLK
RTCSEL[1:0]
LSI RC
40 kHz
LSI
IWDGCLK
Main
Clock Output
/2
MCO
PLLCLK
HSI
Legend:
HSE
SYSCLK
MCO
ai14903
1. When the HSI is used as a PLL clock input, the maximum system clock frequency that can be achieved is
64 MHz.
2. For the USB function to be available, both HSE and PLL must be enabled, with USBCLK running at 48
MHz.
3. To have an ADC conversion time of 1 s, APB2 must be at 14 MHz, 28 MHz or 56 MHz.
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2.2
Description
16 KB
Flash
32 KB
Flash(1)
Medium-density devices
64 KB
Flash
128 KB
Flash
High-density devices
256 KB
Flash
384 KB
Flash
512 KB
Flash
2 USARTs
2 16-bit timers
1 SPI, 1 I2C, USB,
CAN, 1 PWM timer
2 ADCs
3 USARTs
3 16-bit timers
2 SPIs, 2 I2Cs, USB,
CAN, 1 PWM timer
2 ADCs
5 USARTs
4 16-bit timers, 2 basic timers
3 SPIs, 2 I2Ss, 2 I2Cs
USB, CAN, 2 PWM timers
3 ADCs, 2 DACs, 1 SDIO
FSMC (100 and 144 pins)
1. For orderable part numbers that do not show the A internal code after the temperature range code (6 or 7),
the reference datasheet for electrical characteristics is that of the STM32F103x8/B medium-density
devices.
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104
Description
STM32F103x8, STM32F103xB
2.3
Overview
2.3.1
2.3.2
2.3.3
2.3.4
Embedded SRAM
Twenty Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait
states.
2.3.5
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
Description
This hardware block provides flexible interrupt management features with minimal interrupt
latency.
2.3.6
2.3.7
2.3.8
Boot modes
At startup, boot pins are used to select one of three boot options:
The boot loader is located in System Memory. It is used to reprogram the Flash memory by
using USART1. For further details please refer to AN2606.
2.3.9
VDD = 2.0 to 3.6 V: external power supply for I/Os and the internal regulator.
Provided externally through VDD pins.
VSSA, VDDA = 2.0 to 3.6 V: external analog power supplies for ADC, reset blocks, RCs
and PLL (minimum voltage to be applied to VDDA is 2.4 V when the ADC is used).
VDDA and VSSA must be connected to VDD and VSS, respectively.
VBAT = 1.8 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and backup
registers (through power switch) when VDD is not present.
For more details on how to connect power pins, refer to Figure 14: Power supply scheme.
2.3.10
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104
Description
STM32F103x8, STM32F103xB
in reset mode when VDD is below a specified threshold, VPOR/PDR, without the need for an
external reset circuit.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
Refer to Table 11: Embedded reset and power control block characteristics for the values of
VPOR/PDR and VPVD.
2.3.11
Voltage regulator
The regulator has three operation modes: main (MR), low power (LPR) and power down.
Power down is used in Standby mode: the regulator output is in high impedance: the
kernel circuitry is powered down, inducing zero consumption (but the contents of the
registers and SRAM are lost)
This regulator is always enabled after reset. It is disabled in Standby mode, providing high
impedance output.
2.3.12
Low-power modes
The STM32F103xx performance line supports three low-power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
Stop mode
The Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm or the USB
wakeup.
Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), an IWDG reset, a
rising edge on the WKUP pin, or an RTC alarm occurs.
Note:
16/105
The RTC, the IWDG, and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
DocID13587 Rev 16
STM32F103x8, STM32F103xB
2.3.13
Description
DMA
The flexible 7-channel general-purpose DMA is able to manage memory-to-memory,
peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports
circular buffer management avoiding the generation of interrupts when the controller
reaches the end of the buffer.
Each channel is connected to dedicated hardware DMA requests, with support for software
trigger on each channel. Configuration is made by software and transfer sizes between
source and destination are independent.
The DMA can be used with the main peripherals: SPI, I2C, USART, general-purpose and
advanced-control timers TIMx and ADC.
2.3.14
2.3.15
Counter
resolution
Counter
type
Prescaler
factor
TIM1
16-bit
Up,
down,
up/down
Any integer
between 1
and 65536
Yes
Yes
TIM2,
TIM3,
TIM4
16-bit
Up,
down,
up/down
Any integer
between 1
and 65536
Yes
No
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Description
STM32F103x8, STM32F103xB
Input capture
Output compare
If configured as a general-purpose 16-bit timer, it has the same features as the TIMx timer. If
configured as the 16-bit PWM generator, it has full modulation capability (0-100%).
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switch driven by these outputs.
Many features are shared with those of the general-purpose TIM timers which have the
same architecture. The advanced-control timer can therefore work together with the TIM
timers via the Timer Link feature for synchronization or event chaining.
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently of the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes. The counter
can be frozen in debug mode.
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
Description
SysTick timer
This timer is dedicated for OS, but could also be used as a standard downcounter. It
features:
2.3.16
A 24-bit downcounter
Autoreload capability
IC bus
Up to two IC bus interfaces can operate in multimaster and slave modes. They can support
standard and fast modes.
They support dual slave addressing (7-bit only) and both 7/10-bit addressing in master
mode. A hardware CRC generation/verification is embedded.
They can be served by DMA and they support SM Bus 2.0/PM Bus.
2.3.17
2.3.18
2.3.19
2.3.20
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Description
2.3.21
STM32F103x8, STM32F103xB
2.3.22
Single shunt
2.3.23
Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 2 V < VDDA < 3.6 V. The temperature sensor is internally
connected to the ADC12_IN16 input channel which is used to convert the sensor output
voltage into a digital value.
2.3.24
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
PC14PC13OSC32_IN TAMPER-RTC
10
PE2
PB9
PB7
PB4
PB3
PA15
PA14
PA13
PC15OSC32_OUT
VBAT
PE3
PB8
PB6
PD5
PD2
PC11
PC10
PA12
OSC_IN
VSS_5
PE4
PE1
PB5
PD6
PD3
PC12
PA9
PA11
OSC_OUT
VDD_5
PE5
PE0
BOOT0
PD7
PD4
PD0
PA8
PA10
NRST
PC2
PE6
VSS_4
VSS_3
VSS_2
VSS_1
PD1
PC9
PC7
PC0
PC1
PC3
VDD_4
VDD_3
VDD_2
VDD_1
NC
PC8
PC6
VSSA
PA0-WKUP
PA4
PC4
PB2
PE10
PE14
PB15
PD11
PD15
VREF
PA1
PA5
PC5
PE7
PE11
PE15
PB14
PD10
PD14
VREF+
PA2
PA6
PB0
PE8
PE12
PB10
PB13
PD9
PD13
VDDA
PA3
PA7
PB1
PE9
PE13
PB11
PB12
PD8
PD12
AI16001c
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STM32F103x8, STM32F103xB
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
VDD_3
VSS_3
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
LQFP100
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
VDD_2
VSS_2
NC
PA 13
PA 12
PA 11
PA 10
PA 9
PA 8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PA3
VSS_4
VDD_4
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VSS_1
VDD_1
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PE2
PE3
PE4
PE5
PE6
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
VSS_5
VDD_5
OSC_IN
OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VREFVREF+
VDDA
PA0-WKUP
PA1
PA2
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
PE3
PE1
PB8
BOOT0
PD7
PD5
PB4
PB3
PA15
PA14
PA13
PA12
PE4
PE2
PB9
PB7
PB6
PD6
PD4
PD3
PD1
PC12
PC10
PA11
PC13
PE5
RTC_TAMPER
PE0
PD2
PD0
PC11
NC
PA10
VSS_3
PA9
PA8
PC9
VSS_4
PC8
PC7
PC6
VSS_2
VSS_1
VDD_2
VDD_1
C
D
PC14
PE6
VDD_3
PB5
OSC32_IN
E
F
G
VBAT
PC15
OSC32_OUT
OSC_IN
VSS_5
OSC_OUT VDD_5
PC0
NRST
VDD_4
PD15
PD14
PD13
VSSA
PC1
PC2
PD12
PD11
PD10
VREF-
PC3
PA2
PA5
PC4
PD9
PD8
PB15
PB14
PB13
PB10
PB11
PB12
PE14
PE15
VREF+
PA0
WKUP1
PA3
PA6
PC5
PB2
PE8
PE10
PE12
VDDA
PA1
PA4
PA7
PB0
PB1
PE7
PE9
PE11
PE13
MS30481V1
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STM32F103x8, STM32F103xB
VDD_3
VSS_3
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD2
PC12
PC11
PC10
PA15
PA14
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
1
47
2
46
3
45
4
44
5
43
6
42
7
41
8
LQFP64
40
9
39
10
38
11
37
12
36
13
35
14
34
15
33
16
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PB15
PB14
PB13
PB12
PA3
VSS_4
VDD_4
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
VSS_1
VDD_1
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0 OSC_IN
PD1 OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VDDA
PA0-WKUP
PA1
PA2
ai14392
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
PC14PC13OSC32_IN TAMPER-RTC
PB9
PB4
PB3
PA15
PA14
PA13
PC15OSC32_OUT
VBAT
PB8
BOOT0
PD2
PC11
PC10
PA12
OSC_IN
VSS_4
PB7
PB5
PC12
PA10
PA9
PA11
OSC_OUT
VDD_4
PB6
VSS_3
VSS_2
VSS_1
PA8
PC9
NRST
PC1
PC0
VDD_3
VDD_2
VDD_1
PC7
PC8
VSSA
PC2
PA2
PA5
PB0
PC6
PB15
PB14
VREF+
PA0-WKUP
PA3
PA6
PB1
PB2
PB10
PB13
VDDA
PA1
PA4
PA7
PC4
PC5
PB11
PB12
AI15494
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STM32F103x8, STM32F103xB
VDD_3
VSS_3
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PA15
PA14
48 47 46 45 44 43 42 41 40 39 38 37
36
1
2
35
34
3
33
4
32
5
31
6
LQFP48
30
7
29
8
28
9
27
10
26
11
25
12
13 14 15 16 17 18 19 20 21 22 23 24
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PB15
PB14
PB13
PB12
PA3
PA4
PA5
PA6
PA7
PB0
PB1
PB2
PB10
PB11
VSS_1
VDD_1
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0-OSC_IN
PD1-OSC_OUT
NRST
VSSA
VDDA
PA0-WKUP
PA1
PA2
ai14393b
VDD_3
VSS_3
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PA15
PA14
48 47 46 45 44 43 42 41 40 39 38 37
36
1
35
2
3
34
33
32
5
6
QFPN48
31
30
29
28
10
27
11
26
25
12
13 14 15 16 17 18 19 20 21 22 23 24
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PB15
PB14
PB13
PB12
PA3
PA4
PA5
PA6
PA7
PB0
PB1
PB2
PB10
PB11
VSS_1
VDD_1
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0-OSC_IN
PD1-OSC_OUT
NRST
VSSA
VDDA
PA0-WKUP
PA1
PA2
MS31472V1
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DocID13587 Rev 16
STM32F103x8, STM32F103xB
PB7
PB6
PB5
PB4
PB3
PA15
PA14
36
BOOT0
VSS_3
35
34
33
32
31
30
29
28
VDD_3
27
VDD_2
OSC_IN/PD0
26
VSS_2
OSC_OUT/PD1
25
PA13
NRST
24
PA12
23
PA11
VSSA
VDDA
22
PA10
PA0-WKUP
21
PA9
PA1
20
PA8
PA2
9
10
11
12
13
14
15
PA3
PA4
PA5
PA6
PA7
PB0
QFN36
19
18
VDD_1
VSS_1
17
PB2
PB1
16
ai14654
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STM32F103x8, STM32F103xB
LQFP48/UFQFPN48
TFBGA64
LQFP64
LQFP100
VFQFPN36
B2
PE2
I/O FT
PE2
TRACECK
B3
A1
PE3
I/O FT
PE3
TRACED0
C3
B1
PE4
I/O FT
PE4
TRACED1
D3
C2
PE5
I/O FT
PE5
TRACED2
E3
D2
PE6
I/O FT
PE6
TRACED3
B2
E2
B2
VBAT
VBAT
A2
C1
A2
PC13-TAMPERRTC(5)
I/O
PC13(6)
TAMPER-RTC
A1
D1
A1
PC14-OSC32_IN(5) I/O
PC14(6)
OSC32_IN
B1
E1
B1
PC15OSC32_OUT(5)
I/O
PC15(6)
OSC32_OUT
C2
F2
10
VSS_5
VSS_5
D2
G2
11
VDD_5
VDD_5
C1
F1
C1
12
OSC_IN
OSC_IN
PD0(7)
D1
G1
D1
13
OSC_OUT
OSC_OUT
PD1(7)
E1
H2
E1
14
NRST
I/O
NRST
F1
H1
E3
15
PC0
I/O
PC0
ADC12_IN10
F2
J2
E2
16
PC1
I/O
PC1
ADC12_IN11
E2
J3
F2
10
17
PC2
I/O
PC2
ADC12_IN12
11
18
PC3
I/O
PC3
ADC12_IN13
I / O Level(2)
UFBG100
A3
Pin name
Type(1)
LFBGA100
Pins
Main
function(3)
(after reset)
Default
F3
K2
-(8)
G1
J1
F1
12
19
VSSA
VSSA
H1
K1
20
VREF-
VREF-
J1
L1
G1(8)
21
VREF+
VREF+
K1
M1
H1
13
22
VDDA
VDDA
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DocID13587 Rev 16
Remap
STM32F103x8, STM32F103xB
G2
H2
L2
M2
10
11
G2
H2
14
15
23
24
PA0-WKUP
PA1
I / O Level(2)
Pin name
Type(1)
VFQFPN36
LQFP100
LQFP64
TFBGA64
LQFP48/UFQFPN48
UFBG100
LFBGA100
Pins
Main
function(3)
(after reset)
I/O
I/O
Default
PA0
WKUP/
USART2_CTS(9)/
ADC12_IN0/
TIM2_CH1_
ETR(9)
PA1
USART2_RTS(9)/
ADC12_IN1/
TIM2_CH2(9)
J2
K3
12
F3
16
25
PA2
I/O
PA2
USART2_TX(9)/
ADC12_IN2/
TIM2_CH3(9)
K2
L3
13
G3
17
26
10
PA3
I/O
PA3
USART2_RX(9)/
ADC12_IN3/
TIM2_CH4(9)
E4
E3
C2
18
27
VSS_4
VSS_4
F4
H3
D2
19
28
VDD_4
VDD_4
Remap
G3 M3
14
H3
20
29
11
PA4
I/O
PA4
SPI1_NSS(9)/
USART2_CK(9)/
ADC12_IN4
H3
K4
15
F4
21
30
12
PA5
I/O
PA5
SPI1_SCK(9)/
ADC12_IN5
J3
L4
16
G4
22
31
13
PA6
I/O
PA6
SPI1_MISO(9)/
ADC12_IN6/
TIM3_CH1(9)
TIM1_BKIN
TIM1_CH1N
PA7
I/O
PA7
SPI1_MOSI(9)/
ADC12_IN7/
TIM3_CH2(9)
33
PC4
I/O
PC4
ADC12_IN14
25
34
PC5
I/O
PC5
ADC12_IN15
F5
26
35
15
PB0
I/O
PB0
ADC12_IN8/
TIM3_CH3(9)
TIM1_CH2N
G5
27
36
16
PB1
I/O
PB1
ADC12_IN9/
TIM3_CH4(9)
TIM1_CH3N
K3
M4
17
H4
23
32
G4
K5
H5
24
H4
L5
H6
J4
M5
18
K4
M6
19
14
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STM32F103x8, STM32F103xB
LQFP48/UFQFPN48
TFBGA64
LQFP64
LQFP100
VFQFPN36
L6
20
G6
28
37
17
PB2
I/O FT PB2/BOOT1
H5
M7
38
PE7
I/O FT
PE7
TIM1_ETR
J5
L7
39
PE8
I/O FT
PE8
TIM1_CH1N
K5
M8
40
PE9
I/O FT
PE9
TIM1_CH1
G6
L8
41
PE10
I/O FT
PE10
TIM1_CH2N
H6
M9
42
PE11
I/O FT
PE11
TIM1_CH2
J6
L9
43
PE12
I/O FT
PE12
TIM1_CH3N
K6 M10
44
PE13
I/O FT
PE13
TIM1_CH3
G7 M11
45
PE14
I/O FT
PE14
TIM1_CH4
H7 M12
46
PE15
I/O FT
PE15
TIM1_BKIN
J7 L10
21
G7
29
47
PB10
I/O FT
PB10
I2C2_SCL/
USART3_TX(9)
TIM2_CH3
K7 L11
22
H7
30
48
PB11
I/O FT
PB11
I2C2_SDA/
USART3_RX(9)
TIM2_CH4
E7 F12
23
D6
31
49
18
VSS_1
VSS_1
F7 G12 24
E6
32
50
19
VDD_1
VDD_1
I / O Level(2)
UFBG100
G5
Pin name
Type(1)
LFBGA100
Pins
Main
function(3)
(after reset)
Default
25
H8
33
51
PB12
I/O FT
PB12
SPI2_NSS/
I2C2_SMBAl/
USART3_CK(9)/
TIM1_BKIN(9)
J8 K12 26
G8
34
52
PB13
I/O FT
PB13
SPI2_SCK/
USART3_CTS(9)/
TIM1_CH1N (9)
H8 K11
27
F8
35
53
PB14
I/O FT
PB14
SPI2_MISO/
USART3_RTS(9)
TIM1_CH2N (9)
G8 K10 28
F7
36
54
PB15
I/O FT
PB15
SPI2_MOSI/
TIM1_CH3N(9)
K8 L12
Remap
K9
K9
55
PD8
I/O FT
PD8
USART3_TX
J9
K8
56
PD9
I/O FT
PD9
USART3_RX
30/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
LQFP100
VFQFPN36
57
PD10
I/O FT
PD10
USART3_CK
G9 J11
58
PD11
I/O FT
PD11
USART3_CTS
K10 J10
59
PD12
I/O FT
PD12
TIM4_CH1 /
USART3_RTS
J10 H12
60
PD13
I/O FT
PD13
TIM4_CH2
H10 H11
61
PD14
I/O FT
PD14
TIM4_CH3
G10 H10
62
PD15
I/O FT
PD15
TIM4_CH4
F10 E12
F6
37
63
PC6
I/O FT
PC6
TIM3_CH1
E10 E11
E7
38
64
PC7
I/O FT
PC7
TIM3_CH2
F9 E10
E8
39
65
PC8
I/O FT
PC8
TIM3_CH3
D8
40
66
PC9
I/O FT
PC9
TIM3_CH4
D9 D11 29
D7
41
67
20
PA8
I/O FT
PA8
USART1_CK/
TIM1_CH1(9)/
MCO
C9 D10 30
C7
42
68
21
PA9
I/O FT
PA9
USART1_TX(9)/
TIM1_CH2(9)
D10 C12 31
C6
43
69
22
PA10
I/O FT
PA10
USART1_RX(9)/
TIM1_CH3(9)
PA11
USART1_CTS/
CANRX(9)/
USBDM/
TIM1_CH4(9)
PA12
USART1_RTS/
CANTX(9)
/USBDP
TIM1_ETR(9)
E9 D12
C10 B12 32
C8
44
70
23
PA11
I / O Level(2)
LQFP64
Pin name
Type(1)
TFBGA64
UFBG100
H9 J12
LFBGA100
LQFP48/UFQFPN48
Pins
Main
function(3)
(after reset)
I/O FT
B10 A12 33
B8
45
71
24
PA12
I/O FT
A10 A11
34
A8
46
72
25
PA13
I/O FT JTMS/SWDIO
F8 C11
73
E6 F11
35
D5
47
74
26
VSS_2
VSS_2
F6 G11 36
E5
48
75
27
VDD_2
VDD_2
Default
Remap
PA13
Not connected
DocID13587 Rev 16
31/105
104
STM32F103x8, STM32F103xB
LQFP100
VFQFPN36
76
28
PA14
I/O FT JTCK/SWCLK
A8
38
A6
50
77
29
PA15
I/O FT
JTDI
TIM2_CH1_
ETR/ PA15
/SPI1_NSS
B9 B11
B7
51
78
PC10
I/O FT
PC10
USART3_TX
B8 C10
B6
52
79
PC11
I/O FT
PC11
USART3_RX
C8 B10
C5
53
80
PC12
I/O FT
PC12
USART3_CK
A9
I / O Level(2)
LQFP64
49
Pin name
Type(1)
TFBGA64
A7
UFBG100
A9 A10 37
LFBGA100
LQFP48/UFQFPN48
Pins
Main
function(3)
(after reset)
Default
Remap
PA14
C9
C1
81
PD0
I/O FT
PD0
CANRX
B9
D1
82
PD1
I/O FT
PD1
CANTX
B7
C8
B5
54
83
PD2
I/O FT
PD2
C7
B8
84
PD3
I/O FT
PD3
USART2_CTS
D7
B7
85
PD4
I/O FT
PD4
USART2_RTS
B6
A6
86
PD5
I/O FT
PD5
USART2_TX
C6
B6
87
PD6
I/O FT
PD6
USART2_RX
D6
A5
88
PD7
I/O FT
PD7
USART2_CK
TIM3_ETR
A7
A8
39
A5
55
89
30
PB3
I/O FT
JTDO
TIM2_CH2 /
PB3
TRACESWO
SPI1_SCK
A6
A7
40
A4
56
90
31
PB4
I/O FT
JNTRST
TIM3_CH1/
PB4/
SPI1_MISO
C5
C5
41
C4
57
91
32
PB5
I/O
PB5
I2C1_SMBAl
TIM3_CH2 /
SPI1_MOSI
B5
B5
42
D3
58
92
33
PB6
I/O FT
PB6
I2C1_SCL(9)/
TIM4_CH1(9)
USART1_TX
A5
B4
43
C3
59
93
34
PB7
I/O FT
PB7
I2C1_SDA(9)/
TIM4_CH2(9)
USART1_RX
D5
A4
44
B4
60
94
35
BOOT0
32/105
DocID13587 Rev 16
BOOT0
STM32F103x8, STM32F103xB
LQFP48/UFQFPN48
TFBGA64
LQFP64
LQFP100
VFQFPN36
A3
45
B3
61
95
PB8
I/O FT
PB8
TIM4_CH3(9)
I2C1_SCL /
CANRX
A4
B3
46
A3
62
96
PB9
I/O FT
PB9
TIM4_CH4(9)
I2C1_SDA/
CANTX
D4
C3
97
PE0
I/O FT
PE0
TIM4_ETR
C4
A2
98
PE1
I/O FT
PE1
E5
D3
47
D4
63
99
36
VSS_3
VSS_3
F5
C4
48
E4
64
100
VDD_3
VDD_3
I / O Level(2)
UFBG100
B4
Pin name
Type(1)
LFBGA100
Pins
Main
function(3)
(after reset)
Default
Remap
DocID13587 Rev 16
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104
Memory mapping
STM32F103x8, STM32F103xB
Memory mapping
The memory map is shown in Figure 11.
Figure 11. Memory map
APB memory space
0xFFFF FFFF
reserved
0xE010 0000
reserved
0xFFFF FFFF
0x6000 0000
reserved
0x4002 3400
CRC
7
0xE010 0000
0xE000 0000
0x4002 3000
reserved
0x4002 2400
Cortex- M3 Internal
Peripherals
Flash Interface
0x4002 2000
reserved
0x4002 1400
0x4002 1000
RCC
reserved
0x4002 0400
DMA
0x4002 0000
reserved
0xC000 0000
0x4001 3C00
0x4001 3800
0x4001 3400
USART1
reserved
SPI1
0x4001 3000
TIM1
0x4001 2C00
ADC2
0xA000 0000
0x4001 2800
ADC1
0x4001 2400
rese rve d
0x4001 1C00
0x1FFF FFFF
rese rved
0x1FFF F80F
Por t E
0x4001 1800
Port D
0x8000 0000
Option Bytes
0x1FFF F800
0x4001 1400
Port C
0x4001 1000
Port B
0x4001 0C00
System memory
Port A
0x4001 0800
EXTI
0x4001 0400
AFIO
0x1FFF F000
0x6000 0000
0x4001 0000
reserved
0x4000 7400
PWR
0x4000 7000
BKP
0x4000 6C00
rese rved
0x4000 0000
Peripherals
reserved
0x4000 6800
0x4000 6400
0x4000 6000
bxCAN
shared 512 byte
USB/CAN SRAM
I2C2
0x4000 5800
I2C1
0x2000 0000
0x4000 5400
SRAM
reserved
0x4000 4C00
0x0801 FFFF
USART3
0x4000 4800
USART2
0x4000 4400
Flash memory
reserved
0x4000 3C00
SPI2
0x0800 0000
0x0000 0000
0x4000 3800
reserved
0x4000 3400
IWDG
0x4000 3000
WWDG
0x4000 2C00
RTC
0x4000 2800
reserved
Reserved
0x4000 0C00
TIM4
0x4000 0800
0x4000 0400
0x4000 0000
TIM3
TIM2
ai14394f
34/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
Electrical characteristics
5.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1
5.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 C, VDD = 3.3 V (for the
2 V VDD 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean2).
5.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 12.
5.1.5
DocID13587 Rev 16
35/105
104
Electrical characteristics
STM32F103x8, STM32F103xB
STM32F103xx pin
STM32F103xx pin
C = 50 pF
VIN
ai14141
5.1.6
ai14142
Backup circuitry
(OSC32K,RTC,
Wake-up logic
Backup registers)
OUT
GP I/Os
IN
Level shifter
1.8-3.6V
IO
Logic
Kernel logic
(CPU,
Digital
& Memories)
VDD
VDD
1/2/3/4/5
5 100 nF
+ 1 4.7 F
VDD
1/2/3/4/5
VDDA
VREF
10 nF
+ 1 F
Regulator
VSS
10 nF
+ 1 F
VREF+
VREF-
ADC
Analog:
RCs, PLL,
...
VSSA
ai14125d
Caution:
36/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
5.1.7
Electrical characteristics
IDD_VBAT
VBAT
IDD
VDD
VDDA
ai14126
5.2
(2)
|VDDx|
|VSSX VSS|
VESD(HBM)
Ratings
Min
Max
0.3
4.0
VSS 0.3
VDD 4.0
VSS 0.3
4.0
50
50
Unit
mV
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 7: Current characteristics for the maximum
allowed injected current values.
DocID13587 Rev 16
37/105
104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 7. Current characteristics
Symbol
Ratings
Max.
IVDD
150
(1)
IVSS
IIO
150
25
25
IINJ(PIN)(2)
mA
-5/+0
(4)
5
(5)
IINJ(PIN)
Unit
25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. Negative injection disturbs the analog performance of the device. See note 2. on page 77.
3. Positive injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 6: Voltage characteristics for the maximum allowed input voltage
values.
4.
A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 6: Voltage characteristics for the maximum allowed input voltage
values.
5. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values).
Ratings
Storage temperature range
Maximum junction temperature
5.3
Operating conditions
5.3.1
Value
Unit
65 to +150
150
Conditions
Min
Max
fHCLK
72
fPCLK1
36
fPCLK2
72
3.6
3.6
2.4
3.6
1.8
3.6
VDD
VDDA(1)
VBAT
38/105
Parameter
DocID13587 Rev 16
Unit
MHz
STM32F103x8, STM32F103xB
Electrical characteristics
Table 9. General operating conditions (continued)
Symbol
Parameter
Conditions
Min
Max
0.3
VDD+
0.3
0.3
5.5
VDD = 2 V
0.3
5.2
5.5
Standard IO
VIN
FT IO(3)
BOOT0
PD
Power dissipation at TA =
85 C for suffix 6 or TA =
105 C for suffix 7(4)
454
LQFP100
434
UFBGA100
339
TFBGA64
308
LQFP64
444
LQFP48
363
UFQFPN48
624
VFQFPN36
1000
TA
TJ
LFBGA100
40
85
40
105
40
105
40
125
6 suffix version
40
105
7 suffix version
40
125
(5)
(5)
Unit
mW
5.3.2
Parameter
Conditions
Min
Max
20
DocID13587 Rev 16
Unit
s/V
39/105
104
Electrical characteristics
5.3.3
STM32F103x8, STM32F103xB
Parameter
VPVD
Min
Typ
Max
2.1
2.18
2.26
2.08
2.16
2.19
2.28
2.37
2.09
2.18
2.27
2.28
2.38
2.48
2.18
2.28
2.38
2.38
2.48
2.58
2.28
2.38
2.48
2.47
2.58
2.69
2.37
2.48
2.59
2.57
2.68
2.79
2.47
2.58
2.69
2.66
2.78
2.9
2.56
2.68
2.8
2.76
2.88
2.66
2.78
2.9
VPVDhyst(2)
PVD hysteresis
VPOR/PDR
VPDRhyst(2)
PDR hysteresis
TRSTTEMPO
(2)
Conditions
100
1.8(1)
1.88
1.96
Rising edge
1.84
1.92
2.0
40
1
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design, not tested in production.
40/105
DocID13587 Rev 16
2.5
mV
Falling edge
Reset temporization
Unit
V
mV
4.5
ms
STM32F103x8, STM32F103xB
5.3.4
Electrical characteristics
Parameter
Internal reference voltage
Conditions
Min
Typ
Max
1.16
1.20
1.26
1.16
1.20
1.24
5.1
17.1(2)
10
mV
100
ppm/C
VDD = 3 V 10 mV
Temperature coefficient
Unit
V
5.3.5
All I/O pins are in input mode with a static value at VDD or VSS (no load)
The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0
to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above)
Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling)
The parameters given in Table 13, Table 14 and Table 15 are derived from tests performed
under ambient temperature and VDD supply voltage conditions summarized in Table 9.
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 13. Maximum current consumption in Run mode, code with data processing
running from Flash
Max(1)
Symbol
Parameter
Conditions
fHCLK
TA = 105 C
72 MHz
50
50.3
48 MHz
36.1
36.2
36 MHz
28.6
28.7
24 MHz
19.9
20.1
16 MHz
14.7
14.9
8 MHz
8.6
8.9
72 MHz
32.8
32.9
48 MHz
24.4
24.5
19.8
19.9
13.9
14.2
16 MHz
10.7
11
8 MHz
6.8
7.1
IDD
Unit
TA = 85 C
Supply current in
Run mode
mA
Table 14. Maximum current consumption in Run mode, code with data processing
running from RAM
Max(1)
Symbol
Parameter
Conditions
IDD
Supply
current in
Run mode
fHCLK
Unit
TA = 85 C
TA = 105 C
72 MHz
48
50
48 MHz
31.5
32
36 MHz
24
25.5
24 MHz
17.5
18
16 MHz
12.5
13
8 MHz
7.5
72 MHz
29
29.5
48 MHz
20.5
21
16
16.5
11.5
12
16 MHz
8.5
8 MHz
5.5
42/105
DocID13587 Rev 16
mA
STM32F103x8, STM32F103xB
Electrical characteristics
Figure 16. Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals enabled
45
40
Consumption (mA)
35
30
72 MHz
36 MHz
16 MHz
8 MHz
25
20
15
10
5
0
-40
25
70
85
105
Temperature (C)
Figure 17. Typical current consumption in Run mode versus frequency (at 3.6 V) code with data processing running from RAM, peripherals disabled
30
Consumption (mA)
25
20
72 MHz
36 MHz
16 MHz
8 MHz
15
10
0
-40
25
70
85
105
Temperature (C)
DocID13587 Rev 16
43/105
104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 15. Maximum current consumption in Sleep mode, code running from Flash or
RAM
Symbol
Parameter
Conditions
IDD
Supply current in
Sleep mode
fHCLK
Max(1)
TA = 85 C
TA = 105 C
72 MHz
30
32
48 MHz
20
20.5
36 MHz
15.5
16
24 MHz
11.5
12
16 MHz
8.5
8 MHz
5.5
72 MHz
7.5
48 MHz
6.5
36 MHz
5.5
24 MHz
4.5
16 MHz
4.5
8 MHz
1. Based on characterization, tested in production at VDD max, fHCLK max with peripherals enabled.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
44/105
DocID13587 Rev 16
Unit
mA
STM32F103x8, STM32F103xB
Electrical characteristics
Table 16. Typical and maximum current consumptions in Stop and Standby modes
Typ(1)
Symbol
Parameter
Conditions
IDD
Max
Backup
IDD_VBAT domain supply Low-speed oscillator and RTC ON
current
23.5
24
200
370
13.5
14
180
340
2.6
3.4
2.4
3.2
1.7
0.9
1.1
1.4
1.9(2)
2.2
Figure 18. Typical current consumption on VBAT with RTC on versus temperature at different
VBAT values
Consumption ( A )
2.5
2
2V
1.5
2.4 V
1
3V
0.5
3.6 V
0
40 C
25 C
70 C
85 C
105 C
Temperature (C)
ai17351
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Figure 19. Typical current consumption in Stop mode with regulator in Run mode versus
temperature at VDD = 3.3 V and 3.6 V
300
Consumption (A)
250
200
3.3 V
150
3.6 V
100
50
0
-45
25
70
90
110
Temperature (C)
Figure 20. Typical current consumption in Stop mode with regulator in Low-power mode versus
temperature at VDD = 3.3 V and 3.6 V
300
Consumption (A)
250
200
3.3 V
150
3.6 V
100
50
0
-40
25
70
Temperature (C)
46/105
DocID13587 Rev 16
85
105
STM32F103x8, STM32F103xB
Electrical characteristics
Consumption (A)
3.5
3
2.5
3.3 V
3.6 V
1.5
1
0.5
0
45 C
25 C
85 C
105 C
Temperature (C)
All I/O pins are in input mode with a static value at VDD or VSS (no load).
The Flash access time is adjusted to fHCLK frequency (0 wait state from 0 to 24 MHz, 1
wait state from 24 to 48 MHz and 2 wait states above).
Prefetch is ON (Reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled fPCLK1 = fHCLK/4, fPCLK2 = fHCLK/2, fADCCLK =
fPCLK2/4
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 17. Typical current consumption in Run mode, code with data processing
running from Flash
Typ(1)
Symbol
Parameter
Conditions
(3)
External clock
IDD
Supply
current in
Run mode
Running on high
speed internal RC
(HSI), AHB
prescaler used to
reduce the
frequency
fHCLK
72 MHz
36
27
48 MHz
24.2
18.6
36 MHz
19
14.8
24 MHz
12.9
10.1
16 MHz
9.3
7.4
8 MHz
5.5
4.6
4 MHz
3.3
2.8
2 MHz
2.2
1.9
1 MHz
1.6
1.45
500 kHz
1.3
1.25
125 kHz
1.08
1.06
64 MHz
31.4
23.9
48 MHz
23.5
17.9
36 MHz
18.3
14.1
24 MHz
12.2
9.5
16 MHz
8.5
6.8
8 MHz
4.9
4 MHz
2.7
2.2
2 MHz
1.6
1.4
1 MHz
1.02
0.9
500 kHz
0.73
0.67
125 kHz
0.5
0.48
48/105
DocID13587 Rev 16
Unit
mA
mA
STM32F103x8, STM32F103xB
Electrical characteristics
Table 18. Typical current consumption in Sleep mode, code running from Flash or
RAM
Typ(1)
Symbol Parameter
Conditions
External clock
IDD
Supply
current in
Sleep mode
(3)
fHCLK
72 MHz
14.4
5.5
48 MHz
9.9
3.9
36 MHz
7.6
3.1
24 MHz
5.3
2.3
16 MHz
3.8
1.8
8 MHz
2.1
1.2
4 MHz
1.6
1.1
2 MHz
1.3
1 MHz
1.11
0.98
500 kHz
1.04
0.96
125 kHz
0.98
0.95
64 MHz
12.3
4.4
48 MHz
9.3
3.3
36 MHz
2.5
4.8
1.8
3.2
1.2
1.6
0.6
0.5
0.72
0.47
1 MHz
0.56
0.44
500 kHz
0.49
0.42
125 kHz
0.43
0.41
24 MHz
Running on high
16 MHz
speed internal RC
(HSI), AHB prescaler 8 MHz
used to reduce the
4 MHz
frequency
2 MHz
Unit
mA
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
all I/O pins are in input mode with a static value at VDD or VSS (no load)
APB1
APB2
Typical consumption at 25 C
TIM2
1.2
TIM3
1.2
TIM4
0.9
SPI2
0.2
USART2
0.35
USART3
0.35
I2C1
0.39
I2C2
0.39
USB
0.65
CAN
0.72
GPIO A
0.47
GPIO B
0.47
GPIO C
0.47
GPIO D
0.47
GPIO E
0.47
(2)
1.81
ADC1
ADC2
1.78
TIM1
1.6
SPI1
0.43
USART1
0.85
Unit
mA
mA
1. fHCLK = 72 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, default prescaler value for each peripheral.
2. Specific conditions for ADC: fHCLK = 56 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, fADCCLK = fAPB2/4, ADON bit
in the ADC_CR2 register is set to 1.
50/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
5.3.6
Electrical characteristics
Parameter
Conditions
Min
Typ
Max
Unit
25
MHz
fHSE_ext
VHSEH
0.7VDD
VDD
VHSEL
VSS
0.3VDD
tw(HSE)
tw(HSE)
tr(HSE)
tf(HSE)
20
pF
45
55
Cin(HSE)
ns
Parameter
Conditions
Min
Typ
Max
Unit
32.768
1000
kHz
fLSE_ext
VLSEH
0.7VDD
VDD
VLSEL
VSS
0.3VDD
tw(LSE)
tw(LSE)
450
tr(LSE)
tf(LSE)
50
pF
30
70
Cin(LSE)
ns
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
VHSEH
90%
VHSEL
10%
tr(HSE)
tf(HSE)
tW(HSE)
tW(HSE)
THSE
EXTER NAL
CLOCK SOURC E
fHSE_ext
OSC _IN
IL
STM32F103xx
ai14143
VLSEH
90%
VLSEL
10%
tr(LSE)
tf(LSE)
tW(LSE)
OSC32_IN
IL
tW(LSE)
TLSE
EXTER NAL
CLOCK SOURC E
fLSE_ext
STM32F103xx
ai14144b
52/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
Parameter
Min
Typ
Max
Unit
Oscillator frequency
16
MHz
RF
Feedback resistor
200
RS = 30
30
pF
i2
mA
Startup
25
mA/V
VDD is stabilized
ms
fOSC_IN
Oscillator transconductance
gm
tSU(HSE
Conditions
(4)
startup time
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 24). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2. Refer to the application note AN2867 Oscillator design guide for ST
microcontrollers available from the ST website www.st.com.
Figure 24. Typical application with an 8 MHz crystal
Resonator with
integrated capacitors
CL1
fHSE
OSC_IN
8 MH z
resonator
CL2
REXT(1)
RF
OSC_OU T
Bias
controlled
gain
STM32F103xx
ai14145
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
RS = 30 K
15
pF
I2
VDD = 3.3 V
VIN = VSS
1.4
gm
Oscillator transconductance
A/V
TA = 50 C
1.5
TA = 25 C
2.5
TA = 10 C
TA = 0 C
TA = -10 C
10
TA = -20 C
17
TA = -30 C
32
TA = -40 C
60
tSU(LSE)(3)
VDD is
stabilized
Startup time
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note:
For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5 pF to
15 pF range selected to match the requirements of the crystal or resonator. CL1 and CL2, are
usually the same size. The crystal manufacturer typically specifies a load capacitance which
is the series combination of CL1 and CL2.
Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where
Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is
between 2 pF and 7 pF.
Caution:
To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL 7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,
then CL1 = CL2 = 8 pF.
54/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
Resonator with
integrated capacitors
CL1
fLSE
OSC32_IN
32.768 kH z
resonator
Bias
controlled
gain
RF
STM32F103xx
OSC32_OU T
CL2
ai14146
5.3.7
Parameter
Conditions
Min
Typ
Max
Unit
MHz
fHSI
Frequency
DuCy(HSI)
Duty cycle
45
55
1(3)
TA = 40 to 105 C
2.5
TA = 10 to 85 C
1.5
2.2
TA = 0 to 70 C
1.3
TA = 25 C
1.1
1.8
tsu(HSI)(4)
HSI oscillator
startup time
IDD(HSI)(4)
80
100
DocID13587 Rev 16
55/105
104
Electrical characteristics
STM32F103x8, STM32F103xB
(3)
Parameter
Min
Typ
Max
Unit
30
40
60
kHz
85
0.65
1.2
Frequency
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 9.
56/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
Table 26. Low-power mode wakeup timings
Symbol
Parameter
tWUSLEEP(1)
tWUSTOP(1)
tWUSTDBY(1)
Typ
1.8
3.6
5.4
50
Unit
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
5.3.8
PLL characteristics
The parameters given in Table 27 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
Table 27. PLL characteristics
Value
Symbol
Parameter
Unit
Min(1)
Typ
Max(1)
8.0
25
MHz
40
60
fPLL_OUT
16
72
MHz
tLOCK
200
Jitter
Cycle-to-cycle jitter
300
ps
fPLL_IN
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = 40 to 105 C unless otherwise specified.
Table 28. Flash memory characteristics
Symbol
tprog
tERASE
tME
Min(1)
Typ
Max(1)
Unit
40
52.5
70
TA 40 to +105 C
20
40
TA 40 to +105 C
20
40
Parameter
Conditions
DocID13587 Rev 16
ms
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 28. Flash memory characteristics (continued)
Symbol
IDD
Vprog
Min(1)
Typ
Max(1)
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
50
3.6
Parameter
Supply current
Conditions
Programming voltage
Unit
mA
NEND
tRET
Parameter
Endurance
Data retention
Conditions
Unit
Min(1)
Typ
Max
10
1 kcycle(2) at TA = 85 C
30
1 kcycle(2) at TA = 105 C
10
20
10 kcycles
(2)
at TA = 55 C
kcycles
Years
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
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STM32F103x8, STM32F103xB
Electrical characteristics
Table 30. EMS characteristics
Symbol
Parameter
Level/
Class
Conditions
VFESD
2B
VEFTB
VDD3.3 V, TA +25 C,
fHCLK 72 MHz
conforms to IEC 61000-4-4
4A
Unexpected reset
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
SEMI
Conditions
VDD 3.3 V, TA 25 C,
LQFP100 package
Peak level
compliant with
IEC 61967-2
Monitored
frequency band
0.1 to 30 MHz
12
12
30 to 130 MHz
22
19
23
29
DocID13587 Rev 16
Unit
dBV
59/105
104
Electrical characteristics
5.3.11
STM32F103x8, STM32F103xB
Ratings
Conditions
TA +25 C
Electrostatic discharge
conforming to
voltage (human body model)
JESD22-A114
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
TA +25 C
conforming to
ANSI/ESD STM5.3.1
2000
V
II
500
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A current injection is applied to each input, output and configurable I/O pin
60/105
Parameter
Static latch-up class
Conditions
TA +105 C conforming to JESD78A
DocID13587 Rev 16
Class
II level A
STM32F103x8, STM32F103xB
5.3.12
Electrical characteristics
IINJ
Description
Negative
injection
Positive
injection
-0
+0
-5
+0
-5
+5
DocID13587 Rev 16
Unit
mA
61/105
104
Electrical characteristics
5.3.13
STM32F103x8, STM32F103xB
Symbol
Parameter
Conditions
Standard IO
input low level
voltage
VIL
VIH
Vhys
Ilkg
Min
Typ
Max
0.32*(VDD-2V)+0.75 V(1)
0.35VDD(2)
V
0.41*(VDD-2 V)+1.3 V
(1)
IO FT(3) input
high level
voltage
0.65VDD(2)
Standard IO Schmitt
trigger voltage
hysteresis(4)
200
IO FT Schmitt trigger
voltage hysteresis(4)
5% VDD(5)
VIN = 5 V
I/O FT
30
40
50
mV
RPU
Weak pull-up
equivalent resistor(7)
VIN VSS
RPD
Weak pull-down
equivalent resistor(7)
VIN VDD
CIO
k
30
40
50
62/105
Unit
DocID13587 Rev 16
pF
STM32F103x8, STM32F103xB
Electrical characteristics
7. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 26 and Figure 27 for standard I/Os, and
in Figure 28 and Figure 29 for 5 V tolerant I/Os.
Figure 26. Standard I/O input characteristics - CMOS port
Area not
determined
VIH/VIL (V)
=0.65V DD
ment V IH
CMOS
7IHmin
7ILmax
in
Tested
quire
dard re
1.3
(V -2)+
V IH=0.41 DD simulations
sign
de
on
Based
0.8
(V -2)+
VIL=0.28 DD
mulations
design si
Based on
5V
ment V IL=0.3 DD
dard require
stan
on
producti
1.3
CMOS stan
0.8
0.7
tion
uc
Tested in prod
2.7
3.3
VDD (V)
3.6
ai17277c
VIH/VIL (V)
7IHmin
Area not
determined
TTL requirements VIH =2V
2.0
1.3
V -2)+
V IH=0.41( DD simulations
sign
de
on
1.96 Based
1.3
1.25 V IL=0.28(V DD
ations
design simul
-2)+0.8
7ILmax
Based on
0.8
TTL requirements
VIL=0.8V
2.16
3.6
VDD (V)
ai17278b
64/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
VIH/VIL (V)
=0.65V DD
nts V IH
quireme
dard re
OS stan
CM
in
Tested
on
producti
1.3
1
0.7
0.75
1.55
1.16
1.42
1.07
1.295
0.975
-2)+1
V IH=0.42(V DD simulations
gn
si
de
on
d
1.67 Base
-2)+0.75
1 V IL=0.32(V DD
ions
sign simulat
Based on de
5V DD
ent V IL =0.3
dard requirm
CMOS stan
oduction
Tested in pr
2.7
3.3
VDD (V)
3.6
VDD
ai17279c
VIH/VIL (V)
Area not
determined
TTL requirement V IH=2V
1
(V DD-2)+
ions
V IH=0.42* si
gn simulat
de
on
1.67 Based
75
0.
)+
-2
1 V IL=0.32*(V DD simulations
design
Based on
2.0
7IHmin
7ILmax
0.8
0.75
2.16
3.6
VDD (V)
ai17280b
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 7).
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 7).
Parameter
VOL(1)
VOH(3)
VOL (1)
VOH (3)
VOL(1)(4)
VOH(3)(4)
VOL(1)(4)
VOH(3)(4)
Conditions
Min
Max
CMOS port(2),
IIO = +8 mA
2.7 V < VDD < 3.6 V
0.4
VDD0.4
0.4
2.4
1.3
VDD1.3
0.4
VDD0.4
TTL port(2)
IIO =+ 8mA
2.7 V < VDD < 3.6 V
Unit
V
IIO = +20 mA
2.7 V < VDD < 3.6 V
IIO = +6 mA
2 V < VDD < 2.7 V
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 7
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 7 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Based on characterization data, not tested in production.
66/105
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STM32F103x8, STM32F103xB
Electrical characteristics
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 30 and
Table 37, respectively.
Unless otherwise specified, the parameters given in Table 37 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 9.
Table 37. I/O AC characteristics(1)
MODEx[1:0]
bit value(1)
Symbol
Parameter
Conditions
Min
Max
Unit
MHz
125(3)
125(3)
10
25(3)
25(3)
50
30
20
5(3)
8(3)
12(3)
5(3)
8(3)
12(3)
10
tf(IO)out
tr(IO)out
tf(IO)out
tr(IO)out
Fmax(IO)out Maximum
11
tf(IO)out
tr(IO)out
tEXTIpw
frequency(2)
ns
MHz
ns
MHz
ns
ns
1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a
description of GPIO Port configuration register.
2. The maximum frequency is defined in Figure 30.
3. Guaranteed by design, not tested in production.
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Figure 30. I/O AC characteristics definition
90%
10%
50%
50%
90%
10%
EXTERNAL
OUTPUT
ON 50pF
tr(IO)out
tf(IO)out
T
Maximum frequency is achieved if (tr + tf) 2/3)T and if the duty cycle is (45-55%)
when loaded by 50pF
ai14131c
5.3.14
Parameter
Conditions
Min
Typ
Max
Unit
VIL(NRST)(1)
0.5
0.8
VIH(NRST)(1)
VDD+0.5
Vhys(NRST)
200
mV
30
40
50
100
ns
300
ns
RPU
VF(NRST)
(1)
VIN VSS
68/105
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Electrical characteristics
Figure 31. Recommended NRST pin protection
VDD
External
reset circuit(1)
RPU
NRST(2)
Internal reset
Filter
0.1 F
STM32F10x
ai14132d
2. The reset network protects the device against parasitic resets.
3. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 38. Otherwise the reset will not be taken into account by the device.
5.3.15
fEXT
ResTIM
tCOUNTER
Parameter
Timer resolution time
Conditions
fTIMxCLK = 72 MHz
Min
Max
Unit
tTIMxCLK
13.9
ns
fTIMxCLK/2
MHz
36
MHz
Timer resolution
16
bit
65536
tTIMxCLK
910
65536 65536
tTIMxCLK
59.6
fTIMxCLK = 72 MHz
1. TIMx is used as a general term to refer to the TIM1, TIM2, TIM3 and TIM4 timers.
DocID13587 Rev 16
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104
Electrical characteristics
5.3.16
STM32F103x8, STM32F103xB
Communications interfaces
I2C interface characteristics
The STM32F103xx performance line I2C interface meets the requirements of the standard
I2C communication protocol with the following restrictions: the I/O pins SDA and SCL are
mapped to are not true open-drain. When configured as open-drain, the PMOS connected
between the I/O pin and VDD is disabled, but is still present.
The I2C characteristics are described in Table 40. Refer also to Section 5.3.12: I/O current
injection characteristics for more details on the input/output alternate function characteristics
(SDA and SCL).
Table 40. I2C characteristics
Standard mode I2C(1)
Symbol
Parameter
Unit
Min
Max
Min
Max
-
tw(SCLL)
4.7
1.3
tw(SCLH)
4.0
0.6
tsu(SDA)
250
100
th(SDA)
900(3)
tr(SDA)
tr(SCL)
1000
20 + 0.1Cb
300
tf(SDA)
tf(SCL)
300
300
th(STA)
4.0
0.6
tsu(STA)
4.7
0.6
tsu(STO)
4.0
0.6
tw(STO:STA)
4.7
1.3
Cb
400
400
pF
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DocID13587 Rev 16
ns
STM32F103x8, STM32F103xB
Electrical characteristics
VDD_I2C
Rp
Rp
STM32F10x
Rs
SDA
IC bus
Rs
SCL
Start repeated
Start
Start
tsu(STA)
SDA
tf(SDA)
tr(SDA)
th(STA)
tsu(SDA)
tw(SCLL)
th(SDA)
tsu(STO:STA)
Stop
SCL
tw(SCLH)
tr(SCL)
tsu(STO)
tf(SCL)
ai14133e
RP = 4.7 k
400
0x801E
300
0x8028
200
0x803C
100
0x00B4
50
0x0168
20
0x0384
DocID13587 Rev 16
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Parameter
Conditions
Min
Max
Master mode
18
Slave mode
18
ns
%
tr(SCK)
tf(SCK)
Capacitive load: C = 30 pF
DuCy(SCK)
Slave mode
30
70
Slave mode
4tPCLK
th(NSS)(1)
Slave mode
2tPCLK
50
60
Master mode
Slave mode
Master mode
Slave mode
(1)
tw(SCKH)
Master mode, fPCLK = 36 MHz,
SCK high and low time
tw(SCKL)(1)
presc = 4
tsu(MI) (1)
tsu(SI)(1)
th(MI)
(1)
th(SI)(1)
ta(SO)(1)(2)
3tPCLK
tdis(SO)(1)(3)
Slave mode
10
tv(SO) (1)
25
(1)
tv(MO)
th(SO)(1)
th(MO)(1)
15
Unit
MHz
ns
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STM32F103x8, STM32F103xB
Electrical characteristics
NSS input
tc(SCK)
th(NSS)
SCK Input
tSU(NSS)
CPHA= 0
CPOL=0
tw(SCKH)
tw(SCKL)
CPHA= 0
CPOL=1
tv(SO)
ta(SO)
MISO
OUT P UT
tr(SCK)
tf(SCK)
th(SO)
MS B O UT
BI T6 OUT
tdis(SO)
LSB OUT
tsu(SI)
MOSI
I NPUT
B I T1 IN
M SB IN
LSB IN
th(SI)
ai14134c
Figure 34. SPI timing diagram - slave mode and CPHA = 1(1)
NSS input
SCK Input
tSU(NSS)
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tc(SCK)
tw(SCKH)
tw(SCKL)
tv(SO)
ta(SO)
MISO
OUT P UT
MS B O UT
tsu(SI)
MOSI
I NPUT
th(NSS)
th(SO)
BI T6 OUT
tr(SCK)
tf(SCK)
tdis(SO)
LSB OUT
th(SI)
B I T1 IN
M SB IN
LSB IN
ai14135
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Figure 35. SPI timing diagram - master mode(1)
High
NSS input
SCK Input
CPHA= 0
CPOL=0
SCK Input
tc(SCK)
CPHA=1
CPOL=0
CPHA= 0
CPOL=1
CPHA=1
CPOL=1
tsu(MI)
MISO
INP UT
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
MS BIN
BI T6 IN
LSB IN
th(MI)
MOSI
OUTUT
B I T1 OUT
M SB OUT
tv(MO)
LSB OUT
th(MO)
ai14136
USB characteristics
The USB interface is USB-IF certified (Full Speed).
Table 43. USB startup time
Symbol
tSTARTUP(1)
Parameter
USB transceiver startup time
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Max
Unit
STM32F103x8, STM32F103xB
Electrical characteristics
Table 44. USB DC electrical characteristics
Symbol
Parameter
Conditions
Min.(1)
Max.(1)
Unit
3.0(3)
3.6
Input levels
VDD
VDI(4)
I(USBDP, USBDM)
0.2
VCM(4)
0.8
2.5
VSE(4)
1.3
2.0
Output levels
VOL
0.3
VOH
RL of 15 k to VSS(5)
2.8
3.6
1. All the voltages are measured from the local ground potential.
2. To be compliant with the USB 2.0 full-speed electrical specification, the USBDP (D+) pin should be pulled
up with a 1.5 k resistor to a 3.0-to-3.6 V voltage range.
3. The STM32F103xx USB functionality is ensured down to 2.7 V but not the full USB electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
4. Guaranteed by design, not tested in production.
5. RL is the load connected on the USB drivers
Figure 36. USB timings: definition of data signal rise and fall time
Crossover
points
Differen tial
data lines
VCRS
VS S
tr
tf
ai14137
Parameter
Conditions
Min
Max
Unit
CL = 50 pF
20
ns
CL = 50 pF
20
ns
tr/tf
90
110
1.3
2.0
Driver characteristics
tr
tf
trfm
VCRS
Rise time(2)
(2)
Fall time
5.3.17
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104
Electrical characteristics
5.3.18
STM32F103x8, STM32F103xB
Note:
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Power supply
2.4
3.6
VREF+
2.4
VDDA
IVREF
160(1)
220(1)
fADC
0.6
14
MHz
fS(2)
Sampling rate
0.05
MHz
823
kHz
17
1/fADC
VREF+
50
fADC = 14 MHz
fTRIG(2)
VAIN(3)
RAIN(2)
RADC(2)
CADC(2)
pF
tCAL(2)
Calibration time
fADC = 14 MHz
tlat(2)
fADC = 14 MHz
tlatr(2)
fADC = 14 MHz
tS(2)
Sampling time
tSTAB(2)
Power-up time
tCONV(2)
5.9
83
1/fADC
fADC = 14 MHz
fADC = 14 MHz
0.214
3
(4)
s
1/fADC
0.143
(4)
s
1/fADC
0.107
17.1
1.5
239.5
1/fADC
18
1/fADC
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STM32F103x8, STM32F103xB
Electrical characteristics
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
tS (s)
1.5
0.11
0.4
7.5
0.54
5.9
13.5
0.96
11.4
28.5
2.04
25.2
41.5
2.96
37.2
55.5
3.96
50
71.5
5.11
NA
239.5
17.1
NA
Parameter
ET
EO
Offset error
EG
Gain error
ED
EL
Test conditions
Typ
Max(3)
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k,
VDDA = 3 V to 3.6 V
TA = 25 C
Measurements made after
ADC calibration
1.3
1.5
0.5
1.5
0.7
0.8
1.5
Unit
LSB
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Table 49. ADC accuracy(1) (2) (3)
Symbol
Parameter
Typ
Max(4)
1.5
2.5
1.5
1.5
Test conditions
ET
EO
Offset error
EG
Gain error
ED
EL
fPCLK2 = 56 MHz,
fADC = 14 MHz, RAIN < 10 k,
VDDA = 2.4 V to 3.6 V
Measurements made after
ADC calibration
Unit
LSB
4093
(2)
ET
(3)
(1)
6
5
4
EO
EL
ED
2
1 LSBIDEAL
1
0
1
VSSA
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STM32F103x8, STM32F103xB
Electrical characteristics
RAIN(1)
VAIN
VT
0.6 V
AINx
Cparasitic
VT
0.6 V
IL1 A
STM32F103xx
Sample and hold ADC
converter
RADC(1)
12-bit
converter
CADC(1)
ai14150c
VREF+
(see note 1)
1 F // 10 nF
VDDA
1 F // 10 nF
VSSA /VREF
(see note 1)
ai14388b
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104
Electrical characteristics
STM32F103x8, STM32F103xB
Figure 40. Power supply and reference decoupling (VREF+ connected to VDDA)
STM32F103xx
VREF+/VDDA
(See note 1)
1 F // 10 nF
VREF/VSSA
(See note 1)
ai14389
5.3.19
Parameter
Min
Typ
Max
Unit
Average slope
4.0
4.3
4.6
mV/C
Voltage at 25 C
1.34
1.43
1.52
Startup time
10
17.1
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STM32F103x8, STM32F103xB
Package characteristics
Package characteristics
6.1
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104
Package characteristics
STM32F103x8, STM32F103xB
Seating plane
C
ddd
1.00
4.30
A2 A
27
19
A1
A3
E2
28
18
b
27
18
28
0.50
4.10
19
4.30
4.10
4.80
4.80
e
D2
36
10
36
0.75
0.30
10
6.30
ai14870b
Pin # 1 ID
R = 0.20
9
L
ZR_ME
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.800
0.900
1.000
0.0315
0.0354
0.0394
A1
0.020
0.050
0.0008
0.0020
A2
0.650
1.000
0.0256
0.0394
A3
0.250
0.0098
0.180
0.230
0.300
0.0071
0.0091
0.0118
5.875
6.000
6.125
0.2313
0.2362
0.2411
D2
1.750
3.700
4.250
0.0689
0.1457
0.1673
5.875
6.000
6.125
0.2313
0.2362
0.2411
E2
1.750
3.700
4.250
0.0689
0.1457
0.1673
0.450
0.500
0.550
0.0177
0.0197
0.0217
0.350
0.550
0.750
0.0138
0.0217
0.0295
ddd
0.080
0.0031
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STM32F103x8, STM32F103xB
Package characteristics
A
E
E
T
ddd
Seating
plane
A1
Detail Y
D
Exposed pad
area
D2
1
L
48
C 0.500x45
pin1 corner
R 0.125 typ.
Detail Z
E2
1
48
A0B9_ME_V3
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.500
0.550
0.600
0.0197
0.0217
0.0236
A1
0.000
0.020
0.050
0.0000
0.0008
0.0020
6.900
7.000
7.100
0.2717
0.2756
0.2795
6.900
7.000
7.100
0.2717
0.2756
0.2795
D2
5.500
5.600
5.700
0.2165
0.2205
0.2244
E2
5.500
5.600
5.700
0.2165
0.2205
0.2244
0.300
0.400
0.500
0.0118
0.0157
0.0197
0.152
0.0060
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104
Package characteristics
STM32F103x8, STM32F103xB
Table 52. UFQFPN48 7 x 7 mm, 0.5 mm pitch, package mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
0.200
0.250
0.300
0.0079
0.0098
0.0118
0.500
0.0197
ddd
0.080
0.0031
37
36
5.60
0.20
7.30
5.80
6.20
5.60
0.30
12
25
13
0.55
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24
0.50
5.80
DocID13587 Rev 16
0.75
A0B9_FP_V2
STM32F103x8, STM32F103xB
Package characteristics
Figure 45. LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
outline
Z Seating plane
ddd Z
A4 A2
A1 A
E1
e
A1 ball
A1 ball
identifier index area
X
E
A
F
D1
e
Y
K
10
1
BOTTOM VIEW
b (100 balls)
eee M Z Y X
fff M Z
TOP VIEW
H0_ME_V2
Table 53. LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array package
mechanical data
inches(1)
millimeters
Symbol
Min
Typ
A
A1
Max
Min
Typ
1.700
0.0669
0.270
A2
Max
0.0106
0.300
A4
0.0118
0.800
0.0315
0.450
0.500
0.550
0.0177
0.0197
0.0217
9.850
10.000
10.150
0.3878
0.3937
0.3996
D1
E
7.200
9.850
10.000
0.2835
10.150
0.3878
0.3937
E1
7.200
0.2835
0.800
0.0315
1.400
0.0551
0.3996
ddd
0.120
0.0047
eee
0.150
0.0059
fff
0.080
0.0031
N (number of balls)
100
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104
Package characteristics
STM32F103x8, STM32F103xB
Dpad
0.37 mm
0.52 mm typ. (depends on solder
Dsm
mask registration tolerance
Solder paste 0.37 mm aperture diameter
Non solder mask defined pads are recommended
4 to 6 mils screen print
Dpad
Dsm
.47
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STM32F103x8, STM32F103xB
Package characteristics
0.25 mm
0.10 inch
GAGE PLANE
75
51
D
L
D1
76
50
0.5
L1
D3
51
75
0.3
76
50
16.7
14.3
b
E3 E1 E
100
26
1.2
1
100
26
Pin 1
1
identification
25
12.3
25
ccc
16.7
e
A1
ai14906
A2
A
SEATING PLANE
C
1L_ME
Table 54. LQPF100, 14 x 14 mm 100-pin low-profile quad flat package mechanical data
Symbol
inches(1)
millimeters
Min
Typ
Max
Min
Typ
1.6
A1
0.05
A2
1.35
0.17
0.09
15.8
D1
13.8
D3
Max
0.063
0.15
0.002
1.4
1.45
0.0531
0.0551
0.0571
0.22
0.27
0.0067
0.0087
0.0106
0.2
0.0035
16
16.2
0.622
0.6299
0.6378
14
14.2
0.5433
0.5512
0.5591
12
0.0059
0.0079
0.4724
15.8
16
16.2
0.622
0.6299
0.6378
E1
13.8
14
14.2
0.5433
0.5512
0.5591
E3
12
e
L
0.5
0.45
L1
k
ccc
0.4724
0.6
0.0197
0.75
0.0177
1
0.0
3.5
0.0236
0.0295
0.0394
7.0
0.08
0.0
3.5
7.0
0.0031
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104
Package characteristics
STM32F103x8, STM32F103xB
Figure 49. UFBGA100 - ultra fine pitch ball grid array, 7 x 7 mm, 0.50 mm pitch,
package outline
Z Seating plane
ddd Z
A4 A3 A2
A1 A
E1
e
A1 ball
A1 ball
identifier index area
X
E
A
F
D1
e
Y
M
12
1
BOTTOM VIEW
b (100 balls)
eee M Z Y X
fff M Z
TOP VIEW
A0C2_ME_V2
Table 55. UFBGA100 - ultra fine pitch ball grid array, 7 x 7 mm, 0.50 mm pitch, package
mechanical data
Symbol
inches(1)
millimeters
Min
Typ
Max
Min
Typ
Max
0.460
0.530
0.600
0.0181
0.0209
0.0236
A1
0.050
0.080
0.110
0.0020
0.0031
0.0043
A2
0.400
0.450
0.500
0.0157
0.0177
0.0197
A3
0.080
0.130
0.180
0.0031
0.0051
0.0071
A4
0.270
0.320
0.370
0.0106
0.0126
0.0146
0.200
0.250
0.300
0.0079
0.0098
0.0118
6.950
7.000
7.050
0.2736
0.2756
0.2776
D1
5.450
5.500
5.550
0.2146
0.2165
0.2185
6.950
7.000
7.050
0.2736
0.2756
0.2776
E1
5.450
5.500
5.550
0.2146
0.2165
0.2185
e
F
0.500
0.700
0.750
0.0197
0.800
0.0276
0.0295
0.0315
ddd
0.100
0.0039
eee
0.150
0.0059
fff
0.050
0.0020
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STM32F103x8, STM32F103xB
Package characteristics
D
48
ccc $
D1
33
48
33
"
"
D3
0.3
49
32
0.5
32
49
12.7
10.3
L1
10.3
E3 E1 E
64
A1
17
1.2
16
64
7.8
17
Pin 1
identification
16
12.7
ai14909
5W_ME
Table 56. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
1.60
0.0630
A1
0.05
0.15
0.0020
0.0059
A2
1.35
1.40
1.45
0.0531
0.0551
0.0571
0.17
0.22
0.27
0.0067
0.0087
0.0106
0.09
0.20
0.0035
0.0079
12.00
0.4724
D1
10.00
0.3937
12.00
0.4724
E1
10.00
0.3937
0.50
0.0197
3.5
3.5
0.45
0.60
0.75
0.0177
0.0236
0.0295
L1
1.00
0.0394
Number of pins
64
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Package characteristics
STM32F103x8, STM32F103xB
Figure 52. TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package outline
Z Seating plane
ddd Z
A4
A2
A1 A
E1
e
A1 ball
A1 ball
identifier index area
X
E
A
F
D1
e
Y
H
8
1
BOTTOM VIEW
b (64 balls)
eee M Z Y X
fff M Z
TOP VIEW
R8_ME_V3
Table 57. TFBGA64 - 8 x 8 active ball array, 5 x 5 mm, 0.5 mm pitch, package
mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
1.200
0.0472
A1
0.150
0.0059
A2
0.200
0.0079
A4
0.600
0.0236
0.250
0.300
0.350
0.0098
0.0118
0.0138
4.850
5.000
5.150
0.1909
0.1969
0.2028
D1
3.500
0.1378
4.850
5.000
5.150
0.1909
0.1969
0.2028
E1
3.500
0.1378
0.500
0.0197
0.750
0.0295
ddd
0.080
0.0031
eee
0.150
0.0059
fff
0.050
0.0020
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STM32F103x8, STM32F103xB
Package characteristics
Figure 53. Recommended PCB design rules for pads (0.5 mm pitch BGA)
Pitch
0.5 mm
D pad
0.27 mm
Dsm
Solder paste
Dpad
Dsm
ai15495
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Package characteristics
STM32F103x8, STM32F103xB
Seating plane
C
A A2
A1
b
ccc
0.50
1.20
0.25 mm
Gage plane
C
D
36
37
D1
25
24
k
D3
A1
25
36
0.20
7.30
9.70 5.80
L1
7.30
24
37
48
1
13
12
1.20
E3 E1
5.80
9.70
48
Pin 1
identification
13
1
12
5B_ME
Table 58. LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package mechanical data
Symbol
inches(1)
millimeters
Min
Typ
Max
Min
Typ
Max
1.600
0.0630
A1
0.050
0.150
0.0020
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
0.170
0.220
0.270
0.0067
0.0087
0.0106
0.090
0.200
0.0035
0.0079
8.800
9.000
9.200
0.3465
0.3543
0.3622
D1
6.800
7.000
7.200
0.2677
0.2756
0.2835
D3
5.500
0.2165
8.800
9.000
9.200
0.3465
0.3543
0.3622
E1
6.800
7.000
7.200
0.2677
0.2756
0.2835
E3
5.500
0.2165
0.500
0.0197
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
1.000
0.0394
3.5
3.5
ccc
0.080
0.0031
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STM32F103x8, STM32F103xB
6.2
Package characteristics
Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 9: General operating conditions on page 38.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max JA)
Where:
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = (VOL IOL) + ((VDD VOH) IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 59. Package thermal characteristics
Symbol
JA
6.2.1
Parameter
Value
44
46
59
45
65
55
32
18
Unit
C/W
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
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Package characteristics
6.2.2
STM32F103x8, STM32F103xB
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Package characteristics
PD (mW)
600
500
Suffix 6
400
Suffix 7
300
200
100
0
65
75
85
95
105
115
125
135
TA (C)
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104
STM32F103x8, STM32F103xB
STM32
F 103 C 8
7 xxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
103 = performance line
Pin count
T = 36 pins
C = 48 pins
R = 64 pins
V = 100 pins
Flash memory size(1)
8 = 64 Kbytes of Flash memory
B = 128 Kbytes of Flash memory
Package
H = BGA
I = UFBGA
T = LQFP
U = VFQFPN or UFQFPN
Temperature range
6 = Industrial temperature range, 40 to 85 C.
7 = Industrial temperature range, 40 to 105 C.
Options
xxx = programmed parts
TR = tape and real
1. Although STM32F103x6 devices are not described in this datasheet, orderable part numbers that do not
show the A internal code after temperature range code 6 or 7 should be referred to this datasheet for the
electrical characteristics. The low-density datasheet only covers STM32F103x6 devices that feature the
A code.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
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Revision history
Revision history
Table 61. Document revision history
Date
Revision
01-jun-2007
Initial release.
20-Jul-2007
Changes
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Revision history
STM32F103x8, STM32F103xB
Table 61. Document revision history (continued)
Date
18-Oct-2007
98/105
Revision
Changes
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Revision history
Table 61. Document revision history (continued)
Date
22-Nov-2007
Revision
Changes
DocID13587 Rev 16
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104
Revision history
STM32F103x8, STM32F103xB
Table 61. Document revision history (continued)
Date
14-Mar-2008
21-Mar-2008
22-May-2008
100/105
Revision
Changes
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Revision history
Table 61. Document revision history (continued)
Date
21-Jul-2008
22-Sep-2008
Revision
Changes
DocID13587 Rev 16
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104
Revision history
STM32F103x8, STM32F103xB
Table 61. Document revision history (continued)
Date
23-Apr-2009
22-Sep-2009
03-Jun-2010
102/105
Revision
Changes
10
11
12
DocID13587 Rev 16
STM32F103x8, STM32F103xB
Revision history
Table 61. Document revision history (continued)
Date
Revision
Changes
19-Apr-2011
13
07-Dec-2012
14
DocID13587 Rev 16
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Revision history
STM32F103x8, STM32F103xB
Table 61. Document revision history (continued)
Date
14-May-2013
05-Aug-2013
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Revision
Changes
15
16
DocID13587 Rev 16
STM32F103x8, STM32F103xB
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