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Is Good Noise
Leonid Belostotski
Leonid Belostotski (lbelosto@ucalgary.ca) is with the Department of Electrical and Computer Engineering,
University of Calgary, Alberta, Canada.
Digital Object Identifier 10.1109/MMM.2016.2561438
Date of publication: 11 July 2016
28
1527-3342/162016IEEE
August 2016
the concept of noise canceling has enjoyed great interest within the solid-state circuits community; however,
it has also met some criticism [10].
This article highlights similarities and differences
between these two approaches to designing LNAs,
with a focus on comparing their noise factors. The
intent here is to address common misconceptions
associated with noise-canceling LNAs and to show
that both LNA types employ noise cancelation and so
are not so dissimilar as they initially appear. Because
numerous previous publications have successfully
demonstrated noise-matched LNAs [11][16] and noisecanceling LNAs [9], [17][25], I will not try to convince
readers that the two approaches are viable. Instead, I
offer simplified concepts to demonstrate the key ideas
behind the two LNA design approaches. In addition,
I focus on complementary metal-oxidesemiconductor (CMOS) technologies only because mostif not
allnoise-canceling LNAs have been implemented in
CMOS. However, the discussions here apply to other
technologies, as well.
N
Z - Zs
R s R opt opt
4N C s - C opt 2
,
= 1 + Tmin +
T0
^ 1 - C opt 2 h^ 1 - C s 2 h
(1)
(2)
ISTOCKPHOTO.COM/ BEAUTIFULLOTUS
NOISE IMAGEIMAGE LICENSED BY INGRAM PUBLISHING
August 2016
29
representations in Figure 1 can be used interchangeably: for each of these, noise-correlation matrices can
be formed to concisely describe the noise properties of
the LNAs [43], [44]. However, these noise-correlation
matrices tend to require that the discussion be based
on equations. Instead, to allow some physical insight
into circuit operation, I am restricting the discussion
here to analyzing traveling waves, voltages, and currents, which can be understood conceptually without
resorting to equations.
To facilitate visualization of how the noise factor of an LNA is minimized to its lowest value (i.e.,
to Fmin), I first use the concept of traveling noise
waves [45], as illustrated in Figure 1(a); however,
the approaches described in [46][48] can be used,
as well. In this traveling noise wave representation,
there are two correlated noise waves: one emitted
from the LNA input, c1, and one emitted from the
LNA output, c 2. As shown in Figure 2, the noise
wave c 1 partially reflects off the signal source, with
a reflection coefficient Cs, and interferes with the
noise wave c 2 at the LNAs output. If Cs is selected
c2
Noisy LNA
Vdd
c1
Noiseless
LNA
S21
a1
b2
S22
S11
c2
b1
a2
S12
c1
(a)
Noisy LNA
Noisy LNA
Vdd
in1
Vdd
Noiseless
LNA
+
vn1
in2
(b)
Noiseless
LNA
+
vn2
(c)
Noisy LNA
Vdd
vn
+
in
Noiseless
LNA
(d)
Figure 1. A noisy LNA. (a) A wave representation and its flow graph, where c1 and c2 are equivalent traveling noise waves,
a1 and a2 are incident traveling waves, and b1 and b2 are reflected traveling waves. (b) An admittance representation, where
i n1 and i n2 are input and output equivalent noise currents. (c) An impedance representation, where v n1 and v n2 are input and
output equivalent noise currents. (d) A chain representation, where vn and in are input equivalent noise voltage and current.
30
August 2016
1 - S 11 C opt
1 - C opt 2
C opt 2
o,
c 2 2 = kT0 B S 21 2 e Tmin + 4N
T0
1 - C opt 2
ct = 0
= 1+
1 - C s S 11 2
^1 - C s 2h
# = Tmin e 1 T0
(4)
C s 2 ^1 - S 11 2 h
o
1 - C s S 11 2
4N C opt 2
1 - S 11 C opt 2 C s 2
oG, (7)
2 e1 +
1 - C s S 11 2 C opt 2
1 - C opt
and
*
*
C opt
S 21
+ S 11 c 2 2,
c 1 c 2* = - 4kT0 BN
1 - C opt 2 S 21
(5)
C s S 21 2
,
1 - C s S 11 2
(6)
c2
Noisy LNA
Vdd
Zs
s
c1
Noiseless
LNA
1
bs
c2
S21
a1
s
S11
b1
S12
b2
S22
a2
c1
Figure 2. The noise wave flow to the LNA output; bs is the traveling wave launched by the signal source.
August 2016
31
N
,
R s # 0 " Yopt ,
(8)
-1
where Yopt = Z opt
.
1
Desired Return Loss
Transistor Fmin
Noise Factor When Noise Matched at U
Return Loss When Noise Matched at U
Out
Lg
0.8
6
Band of Interest
0.6
10
0.4
14
0.2
LNA Is Noise
Matched
Ls
0
(a)
0.5
L = 0.7
1
U = 1.4
Frequency (GHz)
(b)
Vdd
In
(9)
4
N
~
4 .
R s # 0 " Yopt , ~ U
18
4
Figure 3. A source-degenerated cascode LNA: (a) a simplified schematic (biasing not shown) and (b) an illustration of the
noise-factor behavior across a wide band of frequencies and the associated input reflection coefficient. The desired input
reflection coefficient is also shown.
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Cdc
vni
vin
Rs
vn2
-A
vn1
idn
Rf
vo2
vo1
+
+
=
=
M1
vs
(a)
Vdd
Vdd
RL2
Vb
o+
M1
Cdc
RL1
vno+ vno
vo+Output
vo
idn
=
=
M2
vns
Rs
o Differential Output
Ibias
vin
(b)
33
Vdd
Vbias
Vdd
RL
Rb
M
iin Ys
Cgs
(a)
Vbias
Output
Rb
idn
Rs
ign Cgs
RL
Output
vin
(b)
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August 2016
RL
c1
iin
(a)
Vdd
RL
Output
c2a
iin
c1a
Ma
0.5 W
c1b
c2b
Mb
0.5 W
Zs = Zopt
s = opt
Vdd
c1
M
Width = W
Zs = Zopt
s = opt
Noisy LNA
Zs
s
Output
c2
Noiseless
LNA
c2
(b)
Vdd
Auxiliary Amplifier
RL
(a)
Noisy LNA
vn1a
Vdd
Zs
s
c1
Noiseless
LNA c
2
+
iin
+
vn2a
Ma
0.5 W
Ys = Yopt
(b)
August 2016
Output
Mb
0.5 W
s = opt
Auxiliary Amplifier
(c)
35
Vdd
RL
Ma Replacement
Mc
iin
Vbias
Zs
s
Matching
Network
Mb
36
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50
10 k
Buffer for
Measurement
Purposes
2.7 k
50
10 k
37
Simulated S21
Measured S21
40
S-Parameters (dB)
20
Simulated S11
Simulated S22
Measured S21
Measured S22
20
Simulated S12
Measured S12
40
Input
60
2
4
Frequency (GHz)
(b)
(a)
Calculated NF Based on
Measured Noise Parameters
Measured LNA NFmin
2.5
Noise Figure (dB)
4 GHz
4 GHz
2
1.5
1
NFmin of M1,2 Cascode Biased Through R3
0.5
0
(c)
2
3
Frequency (GHz)
(d)
Figure 10. (a) A micrograph of the LNA shown in Figure 9. (b)(d) The measured and simulated S-parameters and noise
parameters of the LNA (including the buffer). (d) also shows the minimum noise factor (NFmin) of a stand-alone M 1, 2 cascode
with bias supplied through the 2.7-k resistor shown in Figure 9.
TABLE 1. A performance summary comparing the discussed LNA [64] with other sub-2-dB wideband CMOS LNAs.
PDC (mW)
Noise
Figure
(min)
Area
(mm2)
CMOS
Inductors
32 dB
40
1 dB
0.035
65 nm
No
-10
25 dB
42
1.9 dB
0.025
90 nm
No
0.151.8
-12
14 dB
35
1.9 dB
0.075
250 nm
No
0.71.4
-11
17 dB
43
0.2
0.825
90 nm
Yes
S11 (dB)
Voltage
Gain
0.012.8
-10
SF
0.56
[17]
NC
[59]
NM
Work
LNA
Topology
Frequency
(GHz)
[64]
NM + NC
[65]
38
August 2016
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