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IPP80N06S2L-H5
OptiMOS Power-Transistor
Product Summary
Features
N-channel Logic Level - Enhancement mode
Automotive AEC Q101 qualified
V DS
55
4.7
ID
80
PG-TO220-3-1
Type
Package
Ordering Code
Marking
IPB80N06S2L-H5
PG-TO263-3-2
SP0002-19068
2N06LH5
IPP80N06S2L-H5
PG-TO220-3-1
SP0002-19067
2N06LH5
Symbol
ID
Conditions
T C=25 C, V GS=10 V
T C=100 C,
V GS=10 V2)
Value
80
Unit
A
80
I D,pulse
T C=25 C
320
E AS
I D= 80 A
700
mJ
V GS
20
Power dissipation
P tot
300
T j, T stg
Rev. 1.0
T C=25 C
page 1
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
0.5
R thJA
62
R thJA
minimal footprint
62
40
K/W
V (BR)DSS V GS=0 V, I D= 1 mA
55
V GS(th)
1.2
1.6
2.0
I DSS
V DS=55 V, V GS=0 V,
T j=25 C
0.01
100
V DS=55 V, V GS=0 V,
T j=125 C2)
I GSS
V GS=20 V, V DS=0 V
100
nA
R DS(on)
V GS=4.5 V, I D=80 A
5.0
6.5
V GS=4.5 V, I D=80 A,
SMD version
4.7
6.2
V GS=10 V, I D=80 A
4.4
5.0
V GS=10 V, I D=80 A,
SMD version
4.1
4.7
Rev. 1.0
RDS(on)
page 2
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
5000
1060
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Crss
276
t d(on)
19
Rise time
tr
23
t d(off)
75
Fall time
tf
22
Q gs
14
18
Q gd
53
80
Qg
145
190
V plateau
3.0
80
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=1.2
pF
ns
V DD=44 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
I S,pulse
V SD
V GS=0 V, I F=80 A,
T j=25 C
0.9
1.3
t rr
V R=30 V, I F=I S,
di F/dt =100 A/s
76
95
ns
Q rr
V R=30 V, I F=I S,
di F/dt =100 A/s
169
210
nC
T C=25 C
1)
Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 170 A at 25C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
See diagram 13
4)
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
1 Power dissipation
2 Drain current
I D = f(T C); V GS 10 V
350
100
300
80
60
200
I D [A]
P tot [W]
250
150
40
100
20
50
0
0
50
100
150
200
50
T C [C]
100
150
200
T C [C]
I D = f(V DS); T C = 25 C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 s
0.5
10 s
100 s
10-1
100
I D [A]
Z thJC [K/W]
1 ms
0.05
10-2
10
0.1
0.01
single pulse
10-3
1
0.1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
page 4
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
5 Typ. output characteristics
I D = f(V DS); T j = 25 C
R DS(on) = (I D); T j = 25 C
parameter: V GS
parameter: V GS
300
16
10 V
3V
14
4V
250
12
3.5 V
R DS(on) [m]
I D [A]
200
150
3.5 V
10
8
4V
100
4.5 V
10 V
3V
50
2
2.5 V
0
0
0
6
10
20
40
V DS [V]
60
80
100
120
I D [A]
I D = f(V GS); V DS = 6V
parameter: T j
parameter: g fs
200
300
180
250
160
140
200
g fs [S]
I D [A]
120
100
150
80
100
60
40
50
175 C
20
25 C
-55 C
0
1
Rev. 1.0
50
100
150
200
I D [A]
V GS [V]
page 5
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
9 Typ. Drain-source on-state resistance
R DS(ON) = f(T j)
parameter: I D = 80 A; VGS = 10 V
parameter: I D
10
2.5
1.5
V GS(th) [V]
R DS(on) [m]
1150 A
230 A
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [C]
100
140
180
T j [C]
11 Typ. capacitances
IF = f(VSD)
parameter: T j
104
103
Ciss
102
I F [A]
C [pF]
Coss
103
Crss
102
25 C
100
0
10
15
20
25
30
V DS [V]
Rev. 1.0
175 C
101
0.2
0.4
0.6
0.8
1.2
1.4
V SD [V]
page 6
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
13 Typical avalanche energy
E AS = f(T j)
parameter: I D
1200
12
50 A
11 V 44 V
1000
10
60 A
8
80 A
V GS [V]
E AS [mJ]
800
600
400
200
0
0
50
100
150
200
50
100
T j [C]
150
200
Q gate [nC]
66
64
V GS
Qg
62
V BR(DSS) [V]
60
58
56
54
52
50
Q gate
48
Q gs
Q gd
46
-60
-20
20
60
100
140
180
T j [C]
Rev. 1.0
page 7
2005-12-27
IPB80N06S2L-H5
IPP80N06S2L-H5
Published by
Infineon Technologies AG
St.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-12-27