Power Transistors

2SB1493
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2255

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Unit: mm
15.00.5

4.00.1

4.00.1

20.00.3

19.00.3

2.00.1

15.00.2

3.20.1

3.5

Optimum for 60W HiFi output

High foward current transfer ratio hFE: 5000 to 30000
Low collector to emitter saturation voltage VCE(sat): < 2.5V

16.20.5

10.50.5

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12.5

Features

4.50.2

13.00.5

Parameter

Symbol

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

Peak collector current

ICP

Collector current

IC

Collector power TC=25C

Junction temperature

Tj

Storage temperature

Tstg

140

12

70

150

55 to +150

Conditions

100

100

ue

100

on

e/

nc

Internal Connection

VCE = 140V, IB = 0

hFE1

te
na

1:Base
2:Collector
3:Emitter
EIAJ:SC65(a)
TOP3 Package(a)

VCB = 160V, IE = 0

VCEO
hFE2*

Collector to emitter saturation voltage

VCE(sat)

Base to emitter saturation voltage

VBE(sat)

Transition frequency

fT

Turn-on time

ton

Storage time

tstg

Fall time

tf

M
ain

ICEO
IEBO

Forward current transfer ratio

Unit

ICBO

Collector to emitter voltage

0.60.2

max

Di
sc

Emitter cutoff current

5.450.3

10.90.5

tin

Symbol

Collector cutoff current

1.40.3

(TC=25C)

Parameter

FE2

2.5

Electrical Characteristics

*h

Unit

160

2.00.2

1.10.1

PC

Ta=25C

Ratings

min

typ

VEB = 5V, IC = 0

IC = 30mA, IB = 0

140

VCE = 5V, IC = 1A

2000

VCE = 5V, IC = 6A

5000

30000

IC = 6A, IB = 6mA

2.5

IC = 6A, IB = 6mA

3.0

VCE = 10V, IC = 0.5A, f = 1MHz

Pl

dissipation

(TC=25C)

Solder Dip

Absolute Maximum Ratings

IC = 6A, IB1 = 6mA, IB2 = 6mA,

VCC = 50V

20

MHz

1.0

1.5

1.2

Rank classification

Rank
hFE2

5000 to 15000 8000 to 30000

Power Transistors

2SB1493

PC Ta

IC VCE
TC=25C
IB=5mA

10

Collector current IC (A)

60

100

50

1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA

Collector to emitter saturation voltage VCE(sat) (V)

(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(1)
(PC=2.5W)

70

VCE(sat) IC

12

IC/IB=1000

30

10
TC=100C

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Collector power dissipation PC (W)

80

40
30
20

(2)

0.2mA

0.1mA

40

60

80 100 120 140 160

10

12

Forward current transfer ratio hFE

30000

25C

TC=100C

25C

3000
1000

TC=25C

25C

0.3

10

30

tin

on

Di
sc

ton, tstg, tf IC

100

Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(IB1=IB2)
VCC=50V
TC=25C

M
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tstg
tf
ton

te
na

10

30

0.3

10

Collector current IC (A)

Area of safe operation (ASO)

100

Non repetitive pulse

TC=25C

30

Collector current IC (A)

nc

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30

100

ue

Collector current IC (A)

300

10
0.01 0.03 0.1 0.3

100

ICP

10

t=1ms

IC

10ms

DC

Pl

0.3

0.1

0.1

0.03

0.03

0.01
0

12

Collector current IC (A)

16

0.01
1

10

30

100

Cob VCB

10000

10

Collector current IC (A)

1000

VCE=5V

30

0.1
0.1 0.3

0.1
0.1 0.3

hFE IC

100000

IC/IB=1000

100C

Collector to emitter voltage VCE (V)

VBE(sat) IC

100

25C

0.3

Collector output capacitance Cob (pF)

20

Ambient temperature Ta (C)

Base to emitter saturation voltage VBE(sat) (V)

0.3mA

25C

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(3)

Switching time ton,tstg,tf (s)

0.4mA

10
0

10

30

100 300 1000

Collector to emitter voltage VCE (V)

IE=0
f=1MHz
TC=25C

300

100

30

10

1
1

10

30

100

Collector to base voltage VCB (V)

tin

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103

102

101

Time t (s)

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Di
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0.1
104

Pl

M
ain

Thermal resistance Rth(t) (C/W)

M
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Power Transistors
2SB1493

1000

Rth(t) t

Note: Rth was measured at Ta=25C and under natural convection.

(1) PT=10V 0.2A (2W) and without heat sink
(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

100
(1)

10

(2)

10

102

103

104

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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

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ea
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M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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Pl

M
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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