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Lecture Outline
Now move on to bipolar junction transistor (BJT)
Strategy for next few lectures similar to diode: structure
and processing, basic operation, basic quantitative
modeling, more advanced features
This lecture begins by looking at the structure and
processing of the double diffused planar structure, very
similar to epi-diode as well as layout from point of view of
ASIC designer
Then consider basic current flow in structure, 1D
approximation and nomenclature
Calculate depletion widths for junctions
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-2
Page 15-3
Page 15-4
Page 15-5
Photoresist spun on top of the oxide is exposed using the buried layer
mask (mask #1)
The BL mask is usually generated automatically from other masks
Page 15-6
Page 15-7
Page 15-8
The buried layer is formed with a high density (dose) implant of n-type
dopant, usually Phosphorous
Some lateral diffusion of dopants takes place during the implant
Dopant is also introduced into the masking oxide
Page 15-9
Page 15-10
Page 15-11
The resulting epitaxial layer will form the collector region in the BJT,
with the highly doped (low R) buried layer forming an equipotential
region under the device
Note that the buried layer is now completely enclosed in silicon
material
Page 15-12
Page 15-13
Page 15-14
After a long enough implant so that the isolation regions reach the
underlying substrate, the masking oxide is removed
Page 15-15
Page 15-16
Page 15-17
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Page 15-19
Oxide/PR are formed on the surface, and the region which will form
the active base is exposed using the base mask (mask #4)
Page 15-20
A p-type dopant (usually Boron) is implanted into the epi layer through
the oxide window to form the p-type base region
Page 15-21
Page 15-22
Page 15-23
Page 15-24
With the creation of the n+ emitter region in the p-base (in the n-epi
collector), the basic BJT structure is complete, only metal contacts
remain
Page 15-25
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Page 15-27
After etching, openings have been created in the oxide which will
allow access to the collector sinker, base and emitter regions
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Page 15-32
In the integrated BJT structure, the principle current flow for normal
operation is through the sinker, buried layer and up through the vertical
npn structure
The actual active area of the device is a relatively small portion of the
overall structure
Page 15-33
BJT 1D Approximation
AE = bE l E
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-34
BJT Nomenclature
Quantity
Emitter
Base
Collector Units
Doping
NDE
NAB
NDC
/cm3
Minority
Concentration
pEo
nBo
pCo
/cm3
Diffusion
Coefficient
DpE
DnB
DpC
cm2/sec
Page 15-35
An npn BJT has two pn-junctions, and hence two depletion regions
Label the widths of the base-emitter and base-collector depletion
regions WBE and WBC, respectively
Widths of remaining neutral region in collector, base and emitter are
WC, WB and WE, respectively
Page 15-36
kT N AB N DE
=
ln
2
q ni
VbiBC
kT N AB N DC
=
ln
2
q ni
WBE =
2 Si 1
1
+
(VbiBE VBE )
q N AB N DE
WBC =
2 Si 1
1
+
(VbiBC VBC )
q N AB N DC
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-37
Page 15-38
WBE =
WBC =
VbiBE
1017 1019
= 0.93 V
= 0.026 ln
10 2
(1.45 10 )
VbiBC
1017 5 1015
= 0.74 V
= 0.026 ln
10 2
(1.45 10 )
2 11.7 8.854 10 14 1
1
17 + 19 ( 0.93 0.8) = 4.2 10 6 cm
19
10
1.6 10
10
2 11.7 8.854 10 14
1.6 10 19
1
1
5
(
)
cm
17 +
15 0.74 + 0.7 = 6.3 10
10
5 10
Page 15-39
N AB
WC = 4 10 4 WBC
N AB + N DC
1017
= 4 10 6.3 10 17
15
10 + 5 10
4
= 3.4 10 4 cm
Page 15-40
N AB
WE = 1 10 WBE
N AB + N DE
4
1017
= 4 10 4.2 10 17
10 + 1019
4
1 10 4 cm
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-41
N DE
N DC
WB = 15
. 10 4 WBE
WBC
N
+
N
N
+
N
DE
DC
AB
AB
1019
5 1015
5
. 10 4.2 10 19
= 15
6.3 10
10 + 1017
5 1015 + 1017
4
. 10 4 cm
= 14
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-42
145
. 10 )
(
=
10 2
pEo =
n
N DE
nBo =
. 10
(145
n
=
1017
N AB
2
i
19
10
10 2
= 21 / cm 3
= 21
. 103 / cm 3
145
. 1010 )
(
ni2
=
= 4.2 104 / cm 3
pCo =
15
5 10
N DC
2
D pE = D pC =
kT
p = 12.2 cm 2 sec
q
kT
n = 34.9 cm 2 sec
DnB =
q
ELEC 3908, Physical Electronics:
BJT Structure and Fabrication
Page 15-43
Lecture Summary
Looked in detail at fabrication of double diffused structure
Current flow path illustrates importance of conductive epi
buried layer
1D approximation uses emitter area AE
Three regions require slightly more complex naming
scheme for dopings, etc.
Depletion widths calculated based on pn junction
equation applied to each junction
Base neutral width is region of base not accounted for by
depletion regions
Page 15-44