6.electronics GATE

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InstituteforNET/JRF,GATE,IITJAM,JEST,TIFRandGREinPHYSICALSCIENCES
ELECTRONICS SOLUTIONS
GATE-2010
Q1.
The voltage resolution of a 12-bit digital to analog converter (DAC), whose output varies
from 10 V to + 10 V is, approximately
(a) 1 mV
Ans:
(c) 20 mV
(d) 100 mV
(b)
Solution: Voltage resolution=

Q2.
(b) 5 mV
20V
= 4.8 mV
212 1
The figure shows a constant current source charging a capacitor that is initially
Vout
uncharged.
If the switch is closed at t = 0, which of the following plots depicts correctly the output
voltage of the circuit as a function of time?
(a)
(b)
Vout
Vout
(c)
(d)
Vout
Vout
Ans:
(d)
Solution: I 0 =
I
CdV0
V0 = 0 t
C
dt
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Q3.
In one of the following circuits, negative feedback does not operate for a negative input.
Which one is it? The opamps are running from 15 V supplies.

(a)
(b)
(c)
(d)
Ans:
(c)
Q4.
For any set of inputs, A and B, the following circuits give the same output, Q, except one.
Which one is it?
(a)
(b)
Q
(c)
Ans:
(d)
Q
(d)
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GATE-2011
Q5.
Which of the following statements is CORRECT for a common emitter amplifier

circuit?
(a) The output is taken from the emitter
(b) There is 180o phase shift between input and output voltages
(c) There is no phase shift between input and output voltages
(d) Both p-n junctions are forward biased
Ans:
(b)
Q6.
For an intrinsic semiconductor, me* and mh* are respectively the effective masses of
electrons and holes near the corresponding band edges. At a finite temperature the
position of the Fermi level
(a) depends on me* but not on mh*
(b) depends on mh* but not on me*
(c) depends on both me* and mh*
(d) depends neither on me* nor on mh*
Ans:
(c)
Q7.
In the following circuit, the voltage across and the current through the 2 k resistance are
500
1k
20V
10V
2k
30V
(a) 20 V, 10 mA
Ans:
(b) 20 V, 5 mA
(c) 10 V, 10 mA
(d) 10 V, 5 mA
(d)
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Q8.
In the following circuit, Tr1 and Tr2 are identical transistors having VBE = 0.7 V. The
current passing through the transistor Tr2 is
100
Tr2
+5V
Tr1
(a) 57 mA
Ans:
(b) 50 mA
(c) 48 mA
(d) 43 mA
(d)
5 0.7
= 43 mA
100
Solution: Current through 100 , I =

I = I C + 2 I B I C = 43 mA .
Q9.
The following Boolean expression

Y = A B C D + A B C D + A B C D + A B C D + A B C D + A B C D can
be simplified to
(a) A B C + A D
(b) A B C + A D
(c) A B C + A D
Ans:
(d) A B C + A D
(c)
CD
CD
AB
AB
CD
1
1
CD
AD
AB
AB
AB C
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Q10.
4k
1k
Consider the following circuit
+
+ 10V
10V
Vin
Vout
Which of the following correctly represents the output Vout corresponding to the input
Vin?
(a)
+ 5V
+ 2V
Vin
2V
(b)
+ 5V
+ 2V
Vin
2V
time
5V
time
5V
+ 10V
+ 10V
Vout
Vout
- 10V
(c)
time
+ 5V
time
5V
time
+ 10V
Vout
Vout
Ans:
+ 2V
Vin
2V
5V
+ 10V
- 10V
time
(d)
+ 5V
+ 2V
Vin
2V
- 10V
time
- 10V
time
(a)
1
1
Solution: Vut =
10 = 2V .
10 = +2V , Vlt =
1+ 4
1+ 4
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GATE-2012
Q11.
If the peak output voltage of a full wave rectifier is 10 V, its d.c. voltage is
(a) 10.0 V
Ans:
(c) 6.36 V
(d) 3.18 V
(c)
Solution: Vdc =
Q12.
(b) 7.07 V
2Vm
2 10 14 10 70
=
=
= 6.36V
22 / 7
22
11
A Ge semiconductor is doped with acceptor impurity concentration of 1015 atoms/cm3.

For the given hole mobility of 1800 cm2/V-s, the resistivity of the material is
(a) 0.288 cm
Ans:
(c) 3.472 cm
(d) 6.944 cm
(c)
Solution: =
Q13.
(b) 0.694 cm
1
1
= 15
= 3.47 cm
N A e u h 10 1.6 10 19 1800
Identify the CORRECT energy band diagram for silcon doped with Arsenic. Here CB,
VB, ED and EF are conduction band, valence band, impurity level and Fermi level,
respectively.
(a)
(b)
CB
ED
CB
ED
EF
EF
VB
(c)
CB
EF
ED
VB
Ans:
VB
(d)
CB
EF
ED
VB
(b)
Solution: N-type material ( Si doped with AS ).
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Q14.
+ 10V
Consider the following OP-AMP circuit
+
Which one of the following correctly represents the Vin

+5V
output Vout corresponding to the input Vin?
4k
- 10V
1k
(a)
(b)
+ 5V
Vin
+ 1V
0V
+ 5V
Vin
+ 1V
0V
+ 10V
Vout
+ 10V
Vout
t
10V
10V
(c)
(d)
+ 5V
+ 5V
Vin
Vin
0V
0V
+ 10V
Vout
+ 10V
Vout
t
10V
Ans:
Vout
t
10V
(a)
1
Solution: Voltage at inverting input V2 =
5 = +1V .
1+ 4
When vin > +1V , v0 = +VCC and when vin < +1V , v0 = VCC
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Q15.
In the following circuit, for the output voltage to be V0 = ( V1 + V2 / 2 ) the ratio R1/R2 is
(a) 1/2
(b) 1
V1
(c) 2
(d) 3
Ans:
V2
+ VCC
R1
R2
(d)
Vo
+
- VCC
Solution: When V2 = 0, v01 = V1

R R2
when V1 = 0, v02 = 1 +
R R1 + R2
Since V0 = V1 +
Q16.
V2
V2
R2
R
1
2
= 1 =3
R1 + R2 2
R2
2
In the following circuit, the voltage drop across the ideal diode in forward bias condition
is 0.7V. The current passing through the diode is
(a) 0.5 mA
12k
(b) 1.0 mA
(c) 1.5 mA
(d) 2.0 mA
Ans:
24 Volt
6k
(b)
3.3 k
Solution: Let current through 12k is I and through

diode is I D
0 .7 + I D 3 .3 = ( I I D ) 6
(1)
and 24 + I 12 + (I I D ) 6 = 0
(2)
Then
From (1) and (2) I D 1mA.
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Q17.
Consider the following circuit in which the current gain dc of the transistor is 100.
+ 15 V
900
100 k
100
Which one of the following correctly represents the load line (collector current IC with
respect to collector-emitter voltage VCE) and Q-point of this circuit?
(b)
VCE
(d)
Q - point
(7.5 V, 7.5 mA)
VCE
Ans:
Q - point
(2 V, 10 mA)
VCE
15 V
15 mA
IC
(c)
13 mA
IC
Q - point
(2 V, 13 mA)
15 V
15 V
13 mA
IC
15 mA
IC
(a)
Q - point
(7.5 V, 6.5 mA)
VCE
15 V
(a)
Solution: I B =
VCC V BE
15 0.7
14.3
mA.
=
3
RB + RE
100 10 + 100 100
I C I B 14.3mA 13mA , VCE = VCC I C (RC + RE ) = 15 (900 + 100) 13 10 3 = 2V .

I C , Sat =
VCC
15
=
= 15 mA.
R C + R E 1000
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GATE-2013
Q18.
What should be the clock frequency of a 6 bit A / D converter so that its maximum
conserved time is 32s ?
(a) 1 MHz
(b) 2 MHz
(c) 0.5 MHz
(d) 4 MHz
Ans:
(c)
Q19.
A phosphorous doped silicon semiconductor (doping density: 1017/cm3) is heated from

100C to 200C. Which one of the following statements is CORRECT?
(a) Position of Fermi level moves towards conduction band
(b) Position of dopant level moves towards conduction band
(c) Position of Fermi level moves towards middle of energy gap
(d) Position of dopant level moves towards middle of energy gap
Ans:
(c)
Statement for Linked Answer Questions 20 and 21:
Consider the following circuit

Q20.
For this circuit the frequency above which the gain will decrease by 20 dB per decade is
(a) 15.9 kHz
(c) 5.6 kHz
Ans:
(b) 1.2kHz
V(in )
(d) 22.5 kHz
10 k
1000pF
(a)
Solution: f H =
+
V(out )
1 k
1
= 16kHz
2RC
2 k
Q21.
At 1.2 kHz the closed loop gain is

(a) 1
Ans:
(b)
v0
=
v in
(b) 1.5
1 + R F
R1
1 + f
fH
(c) 3
(d) 0.5
= 1 .5
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GATE-2014
Q22.
The input given to an ideal OP-AMP integrator circuit is

V
V0
t
t0
The correct output of the integrator circuit is

(a) V
(b) V
V0
V0
t
t0
(c) V
t0
(d) V
V0
V0
t0
t0
Ans:
(a)
Q23.
The minimum number of flip-flops required to construct a mod-75 counter is

__________
Ans:
Q24.
7
The donor concentration in a sample of n -type silicon is increased by a factor of 100.
The shift in the position of the Fermi level at 300K, assuming the sample to non
degenerate is ________ meV
(k BT = 25meV at 300 K )
Ans:
115.15
N
Nc
Nc
Solution: EC EF = kT ln c and EC EF = kT ln
= kT ln
kT ln (100 )
100 N d
Nd
Nd
Thus shift is E = kT ln (100 ) = 25ln (100 ) meV = 115.15 meV
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Q25.
The current gain of the transistor in the following circuit is dc = 100 . The value of
collector current I C is_________ mA
12V
3k
20 F
V0
150 k
Vi
20 F
3k
Ans:
1.6
Solution: I B =
Q26.
VCC VBE
12 0
=
= 0.016 mA I C = I B = 1.6 mA
RB + ( RC + RE ) 150 + 100 ( 3 + 3)
In order to measure a maximum of 1V with a resolution of 1mV using a n bit

A
converter working under the principle of ladder network the minimum value of n is
D
___________
Ans:
10
1
n 10
2 1
A low pass fliter is formed by a resistance R and a capacitance C . At the cut-off angular
Solution: 1103 =
Q27.
frequency C =
1
the voltage gain and the phase of the output voltage relative to the
RC
input voltage respectively are

(a) 0.71and 45 o
Ans:
(b) 0.71and 45 o
(c) 0.5 and 90 o
(d) 0.5 and 90 o
(b)
v0
XC
1
1
=
=
=
R
vin R + X C
+ 1 1 + jCR
XC
v
1
1
1
1 j 450
e
At = C =
0 ==
=
0 =
1+ j
vin
RC
2
2e j 45
Solution:
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GATE-2015
Q28.
The band gap of an intrinsic semiconductor is E g = 0.72 eV and mn* = 6m*g . At 300 K ,
the Fermi level with respect to the edge of the valence band (in eV ) is at _______(upto
three decimal places) k B = 1.38 10 23 JK 1
Ans.: 0.395
Solution: Ei =
m*
Ec + E 3
+ kT ln h*
2
4
mn
ni = NV e
e
( Ei Ev ) / kT
( Ei Ev ) / kT
= Nc Nv e
Eg / 2 kT
N c Eg / 2 kT
E E / kT
e( i v ) =
e
Nv
N v Eg / 2 kT
e
Nc
N v Eg
E
mh* 4 Eg
Ei Ev
3
=
= ln
+
Ei Ev = kT ln ( 6 ) + g
ln
* +
kT
4
2
me 2kT
N c 2kT
3
0.72
Ei Ev = 0.026 1.7917 +
= 0.3949eV 0.395 eV
4
2
Q29.
Which one of the following DOES NOT represent an exclusive OR operation for inputs
A and B ?
(a) ( A + B )AB
(b) AB + BA
(c) ( A + B )(A + B )
(d) ( A + B )AB
Ans.: (d)
Solution: (a) ( A + B) AB = ( A + B)( A + B) = AB + AB
(b) AB + AB
(c) AB + AB
(d) ( A + B ) AB = AB
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Q30.
Consider the circuit shown in the figure, where RC = 1 . For an input signal Vi shown
below, choose the correct V0 from the options:

R
Vi
C
Vi
V0
1
+
R
V0
(a)
(b)
V0
1
1
V0
(c)
(d) V
i
0 .1
1
1
0 .1
Ans.: (b)
Solution: C
dvi 0 v0
dv
dv
=
v0 = RC in = in
dt
R
dt
dt
vin = +t v0 = 1V and vin = t v0 = +1V
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Q31.
In the simple current source shown in the figure, Q1 and Q2 are identical transistors with
current gain = 100 and VBE = 0.7 V
Vice = 30 V
5 k
I0
Q1
Q2
The current I 0 (in mA) is __________ (upto two decimal places)

Ans.: 5.86
Solution: VCC + I C RC + VBE = 0
IC =
Q32.
30 0.7 29.3
=
= 5.86 mA
5
5
In the given circuit, if the open loop gain A = 10 5 the feedback configurations and the
closed loop gain A f are Vi
1 k
9 k
V0
RL
(a) series-shunt, A f = 9
(b) series-series, A f = 10
(c) series-shunt, A f = 10
(d) shunt-shunt, A f = 10
Ans.: (c)
R
Solution: AF = 1 + F
R1
= (1 + 9 ) = 10.
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Q33.
In the given circuit, the voltage across the source resistor is 1 V . The drain voltage (in V )
25V
is ___________
5k
2 M
Ans.:
500
15
Solution: VS = I D RS I D =
1
1
A VD = VDD I D RD = 25
5000 VD = 15V
500
500
GATE-2016
Q34.
The number density of electrons in the conduction band of a semiconductor at a given

temperature is 2 1019 m 3 . Upon lightly doping this semiconductor with donor
impurities, the number density of conduction electrons at the same temperature
becomes 4 10 20 m 3 . The ratio of majority to minority charge carrier concentration is
________.
Ans :
400
Solution: Intrinsic carrier concentration is ni = 2 1019 m 3

Majority carrier concentration is n = 4 1020 m 3
19
ni2 ( 2 10 )
=
= 1018 m 3
Minority carrier concentration is p =
20
4 10
n
2
The ratio of majority to minority charge carrier concentration is
n 4 1020
=
= 400
p
1018
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Q35.
For the digital circuit given below, the output X is

A
X
B
C
(a) A + B.C
(b) A . (B + C )
(c) A . (B + C )
(d) A + (B.C )
Ans.: (b)
Q36.
For the transistor shown in the figure, assume V BE = 0.7V and dc = 100 . If Vin = 5V , Vout
(in Volts) is _________. (Give your answer upto one decimal place)
10V
3 k
Vout
Vin
200 k
1k
Ans.:
5.7
Solution: I B =
Vin VBE
5 0.7
4.3
=
=
mA I C = I B = 1.433 mA
RB + RE 200 + 100 300
Vout = VCC I C RC Vout = 10 1.433 3 = 5.7 V
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Solution: Voltage resolution=

Which one is it? The opamps are running from 15 V supplies.

Which of the following statements is CORRECT for a common emitter amplifier

(b) depends on mh* but not on me*

(c) depends on both me* and mh*

(d) depends neither on me* nor on mh*

current passing through the transistor Tr2 is

Solution: Current through 100 , I =

The following Boolean expression

A Ge semiconductor is doped with acceptor impurity concentration of 1015 atoms/cm3.

Solution: N-type material ( Si doped with AS ).

Which one of the following correctly represents the Vin

output Vout corresponding to the input Vin?

Solution: When V2 = 0, v01 = V1

Solution: Let current through 12k is I and through

From (1) and (2) I D 1mA.

I C I B 14.3mA 13mA , VCE = VCC I C (RC + RE ) = 15 (900 + 100) 13 10 3 = 2V .

(c) 0.5 MHz

A phosphorous doped silicon semiconductor (doping density: 1017/cm3) is heated from

Statement for Linked Answer Questions 20 and 21:

Consider the following circuit

At 1.2 kHz the closed loop gain is

The input given to an ideal OP-AMP integrator circuit is

The correct output of the integrator circuit is

The minimum number of flip-flops required to construct a mod-75 counter is

Thus shift is E = kT ln (100 ) = 25ln (100 ) meV = 115.15 meV

collector current I C is_________ mA

In order to measure a maximum of 1V with a resolution of 1mV using a n bit

input voltage respectively are

(c) 0.5 and 90 o

(d) 0.5 and 90 o

below, choose the correct V0 from the options:

vin = +t v0 = 1V and vin = t v0 = +1V

current gain = 100 and VBE = 0.7 V

The current I 0 (in mA) is __________ (upto two decimal places)

The number density of electrons in the conduction band of a semiconductor at a given

Solution: Intrinsic carrier concentration is ni = 2 1019 m 3

The ratio of majority to minority charge carrier concentration is

For the digital circuit given below, the output X is

Vout = VCC I C RC Vout = 10 1.433 3 = 5.7 V

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