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ECSS-Q-TM-30-12A

12 October 2010

Space product
assurance
End-of-life parameter drifts - EEE
components

ECSS Secretariat
ESA-ESTEC
Requirements & Standards Division
Noordwijk, The Netherlands

ECSSQTM3012A
12October2010

Foreword
ThisdocumentisoneoftheseriesofECSSTechnicalMemoranda.ItsTechnicalMemorandumstatus
indicates that it is a nonnormative document providing useful information to the space systems
developers community on a specific subject. It is made available to record and present non
normativedata,whicharenotrelevantforaStandardoraHandbook.Notethatthesedataarenon
normativeevenifexpressedinthelanguagenormallyusedforrequirements.
Therefore,aTechnicalMemorandumisnotconsideredbyECSSassuitablefordirectuseinInvitation
ToTender(ITT)orbusinessagreementsforspacesystemsdevelopment.

Disclaimer
ECSSdoesnotprovideanywarrantywhatsoever,whetherexpressed,implied,orstatutory,including,
butnotlimitedto,anywarrantyofmerchantabilityorfitnessforaparticularpurposeoranywarranty
that the contents of the item are errorfree. In no respect shall ECSS incur any liability for any
damages,including,butnotlimitedto,direct,indirect,special,orconsequentialdamagesarisingout
of,resultingfrom,orinanywayconnectedtotheuseofthisDocument,whetherornotbasedupon
warranty,businessagreement,tort,orotherwise;whetherornotinjurywassustainedbypersonsor
propertyorotherwise;andwhetherornotlosswassustainedfrom,oraroseoutof,theresultsof,the
item,oranyservicesthatmaybeprovidedbyECSS.

Publishedby: ESARequirementsandStandardsDivision
ESTEC,P.O.Box299,
2200AGNoordwijk
TheNetherlands
Copyright: 2010bytheEuropeanSpaceAgencyforthemembersofECSS

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Change log

ECSSQTM3012A Firstissue
12October2010

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Table of contents

Change log .................................................................................................................3

Introduction................................................................................................................6

1 Scope and limitations.............................................................................................7

2 Normative references .............................................................................................8

3 Terms, definitions and abbreviated terms............................................................9


3.1 Terms from other standards ....................................................................................... 9
3.2 Terms specific to the present document .................................................................... 9
3.3 Abbreviated terms .................................................................................................... 10

4 User responsibility ...............................................................................................11

5 End-of-life parameter drift....................................................................................12


5.1 General..................................................................................................................... 12
5.2 Methodology............................................................................................................. 13
5.3 Applicability .............................................................................................................. 13
5.4 Elements contributing to parameter drift .................................................................. 14
5.5 Other Elements contributing to parameter drift......................................................... 14

6 End-of-life drift figures .........................................................................................15


6.1 General..................................................................................................................... 15
6.2 Capacitors: ceramic family-group code: 01-01 and 01-02..................................... 17
6.3 Capacitors: solid tantalum family-group code: 01-03 ............................................ 18
6.4 Capacitors: non-solid tantalum family-group code: 01-04 ..................................... 19
6.5 Capacitors: film family-group code: 01-05 ............................................................. 20
6.6 Capacitors: glass and porcelain family-group code: 01-06.................................... 21
6.7 Capacitors: mica family-group code: 01-07 ........................................................... 22
6.8 Capacitors: feedthrough family-group code: 01-10 ............................................... 23
6.9 Capacitors: semiconductor technology (MOS type) family-group code: 01-
11 .............................................................................................................................24
6.10 Capacitors: miscellaneous (variable capacitors) family-group code: 01-99 .......... 25

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6.11 Connectors family-group code: 02-01, 02-02, 02-03, 02-07 and 02-09................. 26
6.12 Connectors RF family-group code: 02-05.............................................................. 27
6.13 Piezo-electric devices: crystal resonator family-group code: 03-01 ...................... 28
6.14 Diodes family-group code: 04-01, 04-02, 04-03, 04-04, 04-06, 04-08, 04-10
to 04-13, and 04-14 .................................................................................................. 29
6.15 Diodes: RF/microwave family-group code: 04-05, 04-11 to 04-13, 04-15, 04-
16 and 04-17 ............................................................................................................ 32
6.16 Feedthrough filters family-group code: 05-01........................................................ 33
6.17 Fuses: Cermet (metal film on ceramic) family-group code: 06-01......................... 34
6.18 Inductors and transformers family-group code: 07-01 - 07-03 .............................. 35
6.19 Integrated circuits: logic family-group code: 08-10, 08-20, 08-21, 08-29 to
08-42, and 08-80 ...................................................................................................... 36
6.20 Integrated circuits: non-volatile memories family-group code: 08-22, 08-23
and 08-24 ................................................................................................................. 37
6.21 Integrated circuits: linear family-group code: 08-50 to 08-60 and 08-69 ............... 38
6.22 Integrated circuits: linear converters family-group code: 08-61 and 08-62............ 41
6.23 Integrated circuits: MMICs family-group code: 08-95 ............................................ 42
6.24 Integrated circuits: miscellaneous family-group code: 08-99................................. 43
6.25 Relays and switches family-group code: 09-01, 09-02 and 16-01......................... 44
6.26 Resistors family-group code: 10-01 to 10-11 ........................................................ 45
6.27 Thermistors family-group code: 11-01 to 11-03 .................................................... 49
6.28 Transistors: bipolar family-group code: 12-01 to 12-04 and 12-09........................ 50
6.29 Transistors: FET family-group code: 12-05 and 12-06 .......................................... 52
6.30 Transistors: RF: bipolar family-group code: 12-10, 12-11, 12-13 .......................... 53
6.31 Transistors: RF: FET family-group code: 12-12, 12-14, 12-15(FET), 12-
16(FET) .................................................................................................................... 54
6.32 Wires and cables family-group code: 13-01 to 13 03 ............................................ 56
6.33 Opto-electronics family-group code: 18-01 to 18-05 ............................................. 57
6.34 RF passive components: family-group-code: 30-01, 30-07, 30-09, 30-10 and
30-99 ........................................................................................................................ 58
6.35 Fibre optic components: fibre and cable: family-group-code: 27-01......................... 59
6.36 Hybrids ..................................................................................................................... 60

Annex A (informative) Family and group codes ...................................................61

Bibliography and reference documents ................................................................65

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Introduction

This Technical Memorandum gathers endoflife drifts in EEE component


parameters suitable for worst case circuit analyses, when the current
informationissufficient.
This Technical Memorandum gathers all data agreed by the Working Group
duringpreparationofthisdocument.

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1
Scope and limitations

ThisTechnicalMemorandumissuitableforallpartiesinvolvedatalllevelsin
therealizationofspacesegmenthardwareanditsinterfaces.
The objective of this Technical Memorandum is to provide dataabout endof
lifeparameterdriftsandtheiruseforequipmentperformanceassessmentupto
theequipmentendoflife.Tothisend,thefollowingaresupplied:
Estimationofendoflifedriftsduetoageing;
Methodologyguidelinesandrecommendations.

The reported ageing drifts in Clause 6 should not be confused with the
endurancetestdriftlimitsallowedintherelevantESCCspecifications(table4
or6).Thedriftvaluesreportedherearebasedoneffectivelifetestresultsand
extrapolatedforoperatingtemperaturemaximarespectingderatingrules.
The selected data is derived from limited test samples, representative of the
knowledgepresentlyavailableasanalysedbytheECSSWG.
EndoflifeisoneofthecontributoroftheWorstCaseCircuitAnalysis,others
beingTemperature,toleranceandradiation.

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2
Normative references

BibliographyandReferencedocumentsinannexatendofdocument.

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3
Terms, definitions and abbreviated terms

3.1 Terms from other standards


Forthepurposesofthisdocument,thetermsanddefinitionsfromECSSSST
0001apply.

3.2 Terms specific to the present document


3.2.1 ambient temperature
temperaturesurroundingacomponent

3.2.2 case temperature


temperatureonacomponentpackagesurface

3.2.3 hot spot temperature


highestmeasuredorpredictedtemperaturewithinanycomponent

3.2.4 junction temperature


temperaturereachedbyasemiconductorwithinitsactiveareaduringoperation

3.2.5 operating conditions


parameterstressandenvironment(temperature,vibration,shockandradiation)
inwhichcomponentsareexpectedtooperate

3.2.6 performance
operationofacomponentoranequipmentwithrespecttospecifiedcriteria

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3.3 Abbreviated terms


Forthepurposeofthisdocument,theabbreviatedtermsfromECSSSST0001
andthefollowingapply:
Abbreviation Meaning
AC alternatingcurrent
A/D analoguetodigital
AWG Americanwiregauge
C capacitance
DC directcurrent
EMC electromagneticcompatibility
EPPL Europeanpreferredpartslist
EOL endoflife
ESCC EuropeanSpaceComponentCoordination
ESR equivalentseriesresistance
f frequency
FET fieldeffecttransistor
GaAs galliumarsenide
GEO geostationaryorbit
HBT heterojunctionbipolartransistor
ISO InternationalOrganizationforStandardization
LED lightemittingdiode
LEO lowEarthorbit
MEO mediumEarthorbit
MOS metalonsilicon
MIL(spec) specificationoftheUSDepartmentofDefense
NASA NationalAeronauticsandSpaceAdministration
P power
RadHard radiationhardened
Ri insulationresistance
SEBO singleeventburnout
SEGR singleeventgaterupture
Si silicon
SOA safeoperatingarea
Tj junctiontemperature
Top operatingtemperature
VCE collectoremittervoltage

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4
User responsibility

The user of this Technical Memorandum should verify that the ordered
assurance level of procured components is compatible with the intended
application.

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5
End-of-life parameter drift

5.1 General
A worstcase circuit performance analysis is performed to assess the
performanceofanequipmentattheendofitsplannedlife.
The present Technical Memorandum provides the time and temperature drift
laws and the parameter drifts data when available at time of document
drafting.

The laws and drifts are only provided in this document when they are
validated.
a. Temperaturelawisvalidatedwhendriftdataisavailableatleastatthree
T.
b. Time law is validated only when drift measurements are available at
severaltimeintervals(morethantwo).

Thedesignersshouldapplyoneofthefollowingdatasources:
a. thepresentTechnicalMemorandum,
b. orthedriftafterlifetestasdefinedintheprocurementspecification,
c. orthedriftfromarepresentativesetoflifetestdata.
Theapplicabilityoftheproposedlifetestdatashouldbejustified.
Data published by the manufacturer in the data sheet or application notes
shouldbeappliedbyorderofprecedence,onacasebycasebasis.

ECSSQHB3001 provides extrapolation rules in the hypothesis that the time
lawislinearandtheTaccelerationfollowstheArrheniuslaw:
a. ForextrapolationtodesignlifetimeoneshouldrefertoECSSQHB3001.
b. ForinterpolationtodesigntemperatureoneshouldrefertoECSSQHB
3001.

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When a deviation to the present Technical Memorandum is encountered and
approvedonthebasisofthedriftfromarepresentativesetoflifetestdata,an
ECSSChangeRequestform(availablefromtheECSSWebsite).
ThefollowingadditionaltextshouldappearintheChangeRequest:
Itisproposedtotakeintoaccountthepresentdeviationforfurtherissue
oftheECSSQTM3012

5.2 Methodology
Driftsshouldbederivedfromtest.
KeyTestconditionsparametersare:
JunctionTestTemperature
TestDuration
Samplestatistics
Test conditions and duration should cover mission conditions and duration
accordingtotimelawandaccelerationlaws.
ApplyArrheniustoextrapolatetoloweroperatingjunctiontemperature.
ApplyreferencedEaor,preferablyderiveActivationenergyEafromtestattwo
temperatures.
Time extrapolation law from test to mission durations should be validated. It
should be based on three intermediate measurements, unless the pessimistic
linearextrapolationisused.
When provided in percentage, the drift value provided in this Technical
Memorandum was derived from the initial measured value or from the
minimumormaximumspecifiedasapplicable.
In the application, this value should be applied in a WCCA on either the
minimumormaximumlimitspecification,accordingtothedriftstable.

5.3 Applicability
The parameter degradation figures provided in this Technical Memorandum
are suitable for all components procured in accordance with approved space
specifications (ESCC, NASA, MIL, National Space Agencies, customer or
manufacturer).
This Technical Memorandum is also suitable for other components that have
undergonerigorousselectiontestinginaccordancewithECSSQST60.

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5.4 Elements contributing to parameter drift


ThisTechnicalmemorandumonlydealswiththeageing(endoflifefactors).
Componentageinganddrifts(endoflifefactors)
The ageing of a component is a continuous process of physicochemical
change. In most cases, the rate of change is an exponential function of
temperature. The figures provided in this Technical Memorandum take
intoaccountthemostcommondegradationmechanisms.

5.5 Other Elements contributing to parameter drift


Ingeneral,parameterdriftcomprisesthefollowing,unlessotherwisespecified.
Initialtolerance
Parametertolerancedefinedintheprocurementspecification.
Temperatureeffects
The junction or case temperature which affects the components initial
performanceandcontributestotheageingmechanism.
Voltageorcurrenteffects
Theparameterdegradationresultingfromtheappliedvoltageorcurrent
shouldbeconsidered.
Radiationeffects
Semiconductorsaresusceptibletodegradationduetoradiation.Agreat
disparityofbehaviourcanappearundertheinfluenceofradiationwhich
canbecausedby:
missionorbitandduration,
radiationtypes(suchasprotons,electronsandheavyions),
componenttechnology,manufacturer,diffusionlot.
Identical components from different manufacturers can have a different
radiationsensitivity.
Componentmounting
The mounting on a printed circuit board or substrate of surface mount
components induces a stress that can have an influence on the
component performance. Components sensitive to mounting processes
are identified, but the expected change is not quantified as this is
consideredtobepartoftheevaluationofthedevice.
Missionduration
Most parameter drifts are a function of time. The endoflife parameter
drift figures are valid for missions of up to 18 years provided the
componentsarederatedinaccordancewithECSSQST3011Standard.

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6
End-of-life drift figures

6.1 General
ThisClauseprovides
1. Thedriftlawsandactivationenergies
2. Theendoflifeparameterdriftfigures
3. Adataintegrityassessment.

AbbreviationsusedinthetablesareexplainedinClause3.
Annex A contains a complete listing of the family and group codes for parts
thatarereferredtointhisTechnicalMemorandum.
Thefollowingformatwasusedtocollectandprovidethedatasourcereferences
andstatisticsinordertoraisetheintegritylevelofthisTMdocument.

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Table61:Tableformatforcollectionofdatasourcereference
Clause
FamilyCode
Datasource Note(1)
Reference
Duration
Testflow Note(2)
Thermalparameter Note(3)
Temperature
ElectricalLoad Note(4)
Parameter
Loadfigure Note(5)
#Manufacturers
#Lots p
#Parts/Lot N
Missionlifecoverage Note(6)
Confidencelevel Note(7) 1/SquarerootofpN
indicator
(1)DataSource SelectbetweenUserindustry,PartsManufacturer,ESCCorOther
(2)Testflow SelectbetweenESCCTable#,Lifetests,burnin,Other.
(3)Thermalparameter SelectbetweenTcforpassivesorTjforactivesorunknown
(4)ElectricalTestParameter SelectbetweenVoltageforCapaorPowerforResistors,orOtherasapplicable
(5)Loadfigure SelectbetweenVoltagexVrforCapaor%PnforResistors,orOtherasapplicable
(6)MissionLifecoverage MaximumLifeDurationderivedfromtestdataforderatedjunctionorcase
temperature
(7)Confidencelevelindicator QualitativerankingbasedonsquarerootoftotalNberofparts
Low Class1_0.4:1to6parts
Fair Class0.4_0.2:7to25parts
Good Class0.2_0.1:26to100parts
High Class0.1_0:morethen100parts

TheBibliographyandreferencedocuments,attheendofthisdocument,containsacompletelist
ofreferencedocumentsanddatasources.

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6.2 Capacitors: ceramic family-group code: 01-01 and


01-02

6.2.1 Drift laws


a. Timelaw:unknown,linearonewasused.
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,34eV

6.2.2 End-of-life drifts Type I and Type II:



CapacitanceC/C 55C 85C 110C
TypeI
10years 0,10% 0,28% 0,57%
18Years 0,18% 0,50% 1,02%
TypeII
10years 0,19% 0,53% 1,14%
18Years 0,34% 0,96% 2,05%
InsulationR/R 55C 85C 110C
TypeIandTypeII
10years 50%
18Years
Derivedfromtestdataat125C,3000h,2xUr

6.2.3 Data source and statistics



Integrityassessment Missionlifecoverage 18Yearsat110C
Confidencelevelindicator TypeI:Good
TypeII:Good

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6.3 Capacitors: solid tantalum family-group code: 01-03

6.3.1 Drift laws


a. Timelaw:unknown,linearonewasused.
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,19eV

6.3.2 End-of-life drifts



CapacitanceC/C 55C 85C 110C
10years 0,63% 1,11% 1.67%
18Years 1,14% 2% 3%
LeakageCurrent 55C 85C 110C
10years Maximumspecifiedlimit.
18Years
Derivedfromtestdataat125C,2000h,0.66xUr

6.3.3 Data source and statistics



Integrityassessment Missionlifecoverage 18Yearsat110C
Confidencelevelindicator High

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6.4 Capacitors: non-solid tantalum family-group code:


01-04

6.4.1 Drift laws


a. Timelaw:unknown,linearonewasused.
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,43eV

6.4.2 End-of-life drifts



CapacitanceC/C 55C 85C 110C
10years 4% 15% 37%
18Years 4% 15% 39%
LeakageCurrent 55C 85C 110C
10years Maximumspecifiedlimit.
18Years
Derivedfromtestdataat125C,2000hrs,Ur

6.4.3 Data source and statistics



Integrityassessment Missionlifecoverage 18Yearsat110C
Confidencelevelindicator Good

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6.5 Capacitors: film family-group code: 01-05

6.5.1 Drift laws


a. Timelaw:unknown,linearonewasused.
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,22eV

6.5.2 End-of-life drifts

6.5.2.1 For Polycarbonate



CapacitanceC/C 55C 85C 100C
10years 0,7% 1,35% 1,8%
18Years 0,78% 1,50% 2%
InsulationR/R 55C 85C 100C
10years
50%
18Years
Forinformation:derivedfromRACdataat100C.

6.5.2.2 For Polyethylene ( PET PM90, PM94, )



CapacitanceC/C 55C 85C 100C
10years 1,9% 3,7% 5%
18Years 2% 3,8% 5%
InsulationR/R 55C 85C 100C
10years
50%
18Years
Derivedfromtestdataat100C,1.25xUr,2000hrsfor80%loadratio

6.5.3 Data source and statistics



Integrityassessment Missionlifecoverage Polycarbonate:unknown
Polyethylene:18Yearsat100C
Confidencelevel Polycarbonate:unknown
indicator Polyethylene:High

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6.6 Capacitors: glass and porcelain family-group code:


01-06

6.6.1 Drift laws


a. Timelaw:unknown,linearonewasused.
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,37eV

6.6.2 End-of-life drifts



Capacitance 55C 85C 110C
C/C
10years 0,02% 0,06% 0,13%
18Years 0,04% 0,10% 0,24%
Derivedfromtestdataat125C,2xUr,1000hrsfor60%loadratio..

6.6.3 Data source and statistics



Integrity Missionlifecoverage 18Yearsat110C
assessment
Confidencelevelindicator Fair

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6.7 Capacitors: mica family-group code: 01-07

6.7.1 Drift laws


a. Timelaw
b. Temperaturelaw:ArrheniuslawwithActivationEnergy:Ea=0,37eV

6.7.2 End-of-life drifts



CapacitanceC/C 55C 85C 110C
10years 0,10% 0,15% 0,33%
18Years 0,18% 0,27% 0,6%
Forinformation:derivedfromRACdata

6.7.3 Data source and statistics



Integrityassessment Missionlifecoverage Unknown
Confidencelevelindicator Unknown

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6.8 Capacitors: feedthrough family-group code: 01-10



SeeClause6.2Ceramiccapacitors.

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6.9 Capacitors: semiconductor technology (MOS type)


family-group code: 01-11

6.9.1 Drift laws


Nodataavailable.

6.9.2 End-of-life drifts


Nodataavailable.

6.9.3 Data source and statistics


Nodataavailable.

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6.10 Capacitors: miscellaneous (variable capacitors)


family-group code: 01-99

6.10.1 Drift laws


a. Timelaw:notapplicable
b. Temperaturelaw:nothermalactivation
c. ActivationEnergy:notapplicable

6.10.2 End-of-life drifts


Stayswithinspecificationlimit.

6.10.3 Data source and statistics


Nodataavailable.

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6.11 Connectors family-group code: 02-01, 02-02, 02-03,


02-07 and 02-09

6.11.1 Drift laws


Nodriftshouldbeconsidered.

6.11.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.11.3 Data source and statistics


Nodataavailable.

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6.12 Connectors RF family-group code: 02-05

6.12.1 Drift laws


Nodriftshouldbeconsidered.

6.12.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.12.3 Data source and statistics


Nodataavailable.

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6.13 Piezo-electric devices: crystal resonator family-


group code: 03-01

6.13.1 Drift laws


Nodriftlawconsidered.

6.13.2 End-of-life drifts



Parameters Drifts Specialconditions
Crystals
f/f Ageingspecifiedinthedetail Unlessotherwisespecified,ageingincludesthe
specification. expectedtotaldrift(includinglifetime,vibration,
shock,drivelevel).Ageingshouldbeaddedtothe
frequencytoleranceatT0andtothefrequency
variationovertheoperatingtemperaturerange.
Hybrid
oscillators
Parameters Thevariationapplicabletothelogicfamilyinside
applicablefor thehybridshouldbeaddedtoageing.
theLogic
Family
components
insidethe
hybride.

6.13.3 Data source and statistics


Nodataavailable.

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6.14 Diodes family-group code: 04-01, 04-02, 04-03, 04-


04, 04-06, 04-08, 04-10 to 04-13, and 04-14

6.14.1 Drift laws


a. Timelaw:unknown,linearonewasused
b. Temperaturelaw:ArrheniuswithActivationEnergy:Ea=1,1eV

6.14.2 End-of-life drifts

6.14.2.1 Signal
Nodataavailable.

6.14.2.2 Switching
Nodataavailable.
ForwardVoltage 55C 85C 110C
10years
18Years


ReverseCurrent 55C 85C 110C
10years
18Years

6.14.2.3 Rectifier

ForwardVoltage 55C 85C 110C
5years +1.4%
10years
18Years +0.45%
ReverseCurrent 55C 85C 110C
5years +13%
10years
18Years +4.4%
DerivedfromTestdata2000hrs,Tj=150C

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6.14.2.4 Schottky
Nodataavailable.

6.14.2.5 Zener, non compensated reference


Nodataavailable.

6.14.2.6 Zener, compensated reference



ZenerVoltage 55C 85C 110C
10years 0% 0,2%
18Years
ReverseCurrent 55C 85C 110C
10years +0,4% +30%
18Years
Dynamic 55C 85C 110C
Impedance
10years 0,1%/+0% 2.9%/+1.2%
18Years
Derivedfromtestdata:atTa=100C,3000h,withEa=1.1eV

6.14.3 Data source and statistics

6.14.3.1 Signal
Nodataavailable.

6.14.3.2 Switching
Nodataavailable.

6.14.3.3 Rectifier

N Missionlifecoverage 18Yearsat85C
Confidencelevelindicator Fair

6.14.3.4 Schottky
Nodataavailable.

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6.14.3.5 Zener , non compensated reference
Nodataavailable.

6.14.3.6 Zener , compensated reference



Integrity Missionlifecoverage 18Yearsat55C
assessment
Confidencelevelindicator Good

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6.15 Diodes: RF/microwave family-group code: 04-05, 04-


11 to 04-13, 04-15, 04-16 and 04-17

6.15.1 Drift laws


a. Timelaw:
b. Temperaturelaw:
c. ActivationEnergy:

6.15.2 End-of-life drifts for RF diode

6.15.2.1 Step recovery, varactor


Nodataavailable.

6.15.2.2 Schottky barrier


Nodataavailable.

6.15.3 Data source and statistics

6.15.3.1 Step Recovery, Varactor


Nodataavailable.

6.15.3.2 Schottky barrier


Nodataavailable.

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6.16 Feedthrough filters family-group code: 05-01

6.16.1 Drift laws


Nodataavailable.

6.16.2 End-of-life drifts



Parameters Drifts
Attenuation 2dBinadditiontotheinitialtolerance.
DRi/Ri 50%
Informationnote.
Attenuation:tobechecked,inthemeantime,driftisasproposedbyECSSQ60
11A
Insulationresistance:shouldbesimilartoCeramiccapacitor

6.16.3 Data source and statistics


Nodataavailable.

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6.17 Fuses: Cermet (metal film on ceramic) family-group


code: 06-01

6.17.1 Drift laws


Nodataavailable.

6.17.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.17.3 Data source and statistics


Nodataavailable.

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6.18 Inductors and transformers family-group code: 07-


01 - 07-03

6.18.1 Drift laws


Nodataavailable.

6.18.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.18.3 Data source and statistics


Nodataavailable.

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6.19 Integrated circuits: logic family-group code: 08-10,


08-20, 08-21, 08-29 to 08-42, and 08-80

6.19.1 Drift laws


Nodataavailable.

6.19.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.19.3 Data source and statistics


Nodataavailable.

36
ECSSQTM3012A
12October2010

6.20 Integrated circuits: non-volatile memories family-


group code: 08-22, 08-23 and 08-24

6.20.1 Drift laws


Nodataavailable.

6.20.2 End-of-life drifts


Nodriftshouldbeconsidered.

6.20.3 Data source and statistics


Nodataavailable.

37
ECSSQTM3012A
12October2010

6.21 Integrated circuits: linear family-group code: 08-50


to 08-60 and 08-69

6.21.1 Drift laws


a. Timelaw
b. TemperaturelawArrhenius
c. ActivationEnergy:Ea=0,8eV

6.21.2 End-of-Life drifts

6.21.2.1 Relevant parameters for linear ICs


Part
Familycode Parameter Code Units
type

OpAmp InputOffsetVoltage V(IO) %ofmaxlimit


InputBiasCurrent I(B) %ofmaxlimit
InputOffsetCurrent I(OS) %ofmaxlimit
LargesignalVoltageGain A(VO) %ofminlimit
GainBandWidthproduct GBW %ofminlimit
CommonModeRejectionRatio CMRR %ofminlimit
PowerSupplyRejectionRatio PSRR %ofminlimit
SupplyCurrent ICC %ofmaxlimit


Comparator InputOffsetVoltage V(IO) %ofmaxlimit
InputBiasCurrent I(B) %ofmaxlimit
InputOffsetCurrent I(OS) %ofmaxlimit
LargesignalVoltageGain A(VO) %ofminlimit
SupplyCurrent ICC %ofmaxlimit

Regulator OutputVoltage
ReferenceVoltage
LineRegulation
LoadRegulation
InputOffsetVoltage V(IO) %ofmaxlimit
InputBiasCurrent I(B) %ofmaxlimit

38
ECSSQTM3012A
12October2010

Part
Familycode Parameter Code Units
type

InputOffsetCurrent I(OS) %ofmaxlimit


LargesignalVoltageGain A(VO) %ofminlimit
gainbandWidthproduct GBW %ofminlimit
SupplyCurrent ICC %ofmaxlimit
OvervoltageProtectionThreshold OVPTH
UndervoltageprotectionThreshold UVPTH
Overcurrentprotectionthreshold OIPTH

PWM OutputVoltage
ReferenceVoltage
LineRegulation
LoadRegulation
InputOffsetVoltage V(IO) %ofmaxlimit
InputBiasCurrent I(B) %ofmaxlimit
InputOffsetCurrent I(OS) %ofmaxlimit
LargesignalVoltageGain A(VO) %ofminlimit
gainbandWidthproduct GBW %ofminlimit
SupplyCurrent ICC %ofmaxlimit
OvervoltageProtectionThreshold OVPTH
UndervoltageprotectionThreshold UVPTH
Overcurrentprotectionthreshold OIPTH
DutyCycleMax
DutyCycleMin
Undervoltageprotectionhysterisis
UndervoltageprotectionHigh
UndervoltageprotectionLow

VoltageReference ReferenceVoltage
LineRegulation
LoadRegulation

D/Aconverters FullScalecurrent IFS mA
ZeroScalecurrent IZS microA
SupplyCurrent ICC %ofmaxlimit

39
ECSSQTM3012A
12October2010

Part
Familycode Parameter Code Units
type

A/Dconverters

AnalogSwitch
AnalogMultiplexer
Note1:onlyDCrelevantparametersareprovided
Note2:ACparametersdefinitionsmayalsobeuseful

6.21.2.2 Operational Amplifiers



InputbiasCurrent 55C 85C 110C
(%ofmaximum
limit)
10years Coveredbytest
dataavailable
18Years Coveredbytest
dataavailable

ThedriftsvaluesderivedfromTestreferencedinRD3showlargedispersionsfromtypetotype.
ThetypicalTestconditionsreportedatTa=125C,1000h,donotallowtocoverthefullTemperature
Durationspectrum.
WiththeassumptionofEa=0,8eVonlythe55C,18yearsareaiscovered.

6.21.3 Data source and statistics



Integrityassessment Missionlifecoverage 18Yearsat55C
Confidencelevelindicator Unknown

40
ECSSQTM3012A
12October2010

6.22 Integrated circuits: linear converters family-group


code: 08-61 and 08-62

6.22.1 Drift laws


Nodataavailable.

6.22.2 End-of-life drifts


Nodataavailable.

6.22.3 Data source and statistics


Nodataavailable.

41
ECSSQTM3012A
12October2010

6.23 Integrated circuits: MMICs family-group code: 08-95

6.23.1 Drift Laws


Tobedefined.
TobeorganizeddependingontheRFfunctionalityofthecircuits.

6.23.2 End-of-life drifts


Tobedefined.
TobeorganizeddependingontheRFfunctionalityofthecircuits.

6.23.3 Data source and statistics



Tobedefined.
TobeorganizeddependingontheRFfunctionalityofthecircuits.

42
ECSSQTM3012A
12October2010

6.24 Integrated circuits: miscellaneous family-group


code: 08-99

6.24.1 Drift laws


RefertorelevantIntegratedCircuitsections.

6.24.2 End-of-life drifts


RefertorelevantIntegratedCircuitsections.

6.24.3 Data source and statistics


RefertorelevantIntegratedCircuitsections.

43
ECSSQTM3012A
12October2010

6.25 Relays and switches family-group code: 09-01, 09-


02 and 16-01

6.25.1 Drift laws


Timelaw:notapplicable.
Accelerationfactor:operationsnumberthreshold.

6.25.2 End-of-life drifts



Parameters Drifts
Contactresistance Maximumlimit(ifN<1000operations).
Maximumlimit2(ifN>1000operations).
Forthermalswitchesonly:
Operatingtemperature(Tf) Initialtolerance+1C
Resettemperature(Tr) Initialtolerance+1C

6.25.3 Data source and statistics


Notapplicable.

44
ECSSQTM3012A
12October2010

6.26 Resistors family-group code: 10-01 to 10-11

6.26.1 Drift laws Generic to Resistors


DriftfiguresarepresentedintableformatatTcase+50%Pn.
Asapreferablealternative,driftsshouldbereportedintablesasafunctionof
HotSpotTemperatures55C,85Cand125C.Thisisonstandbyattimeof
productionofthisTechnicalmemorandum.
All data, except for clause 6.26.2.6 Chip High Precision, is compiled
manufacturerdataforwhichconfidencelevelcouldnotbeassessed.
a. Timelaw:CubicrootoftimelawapplytoallMetalandFilmResistors.
b. Temperaturelaw:ArrheniuswithactivationEnergyEaspecifiedtypeby
type.

6.26.2 End-of-life drifts

6.26.2.1 Metal film (RNC except RNC90)


Timelaw:cubicrootoftime
Temperature law: Arrhenius,Ea=0,28eV

DriftsatTcase+50%Pn 55C 85C 125C
10years 0,19 0,44% 1,1%
18years 0,23 0,52% 1,3%
DerivedfromcompiledmanufacturerTestdata8000hat125C,100%Pn,
Drift0,5%
Datapublishedbythemanufacturerinthedatasheetorapplicationnotes
shouldbeappliedbyorderofprecedence,onacasebycasebasis.

6.26.2.2 Metal film (RLR)


Timelaw:cubicrootoftime
Temperature law: Arrhenius, Ea=0,28eV

DriftsatTcase+50%Pn 55C 85C 125C
10years 0,39 0,88% 2,2%
18years 0,47 1,04% 2,7%
DriftsderivedfromTest8000h125C,100%Pn,Drift1%

45
ECSSQTM3012A
12October2010
6.26.2.3 Foil (RNC90)
Timelaw:linear
AlinearlawisproposedforRNC90for0,3W,125C.
Drift=0,006t+76,6
Temperaturelaw:Arrhenius,Ea=0,18eV

DriftsatTcase+50%Pn 55C 85C 125C
10years 0,02% 0,06% 0,08%
18years 0,02% 0,04% 0,11%
OrR/R=50E6whicheverishigher.
DriftsderivedfromTest1000h,115C,100%Pn,Drift50E6

6.26.2.4 Wire-wound power resistors (Type RWR, RER)



Parameters Drifts
5years 10years 18years
DR/Rwirewound 0,8% 1,2% 1,5%
power:typesRWR,
RER

6.26.2.5 Chip Thin Film Resistor (Type RM), network


Resistor;
Timelaw:cubicrootoftime
Temperaturelaw:Arrhenius,Ea=0,28eV

DriftsatTcase+50 55C 85C 125C
%Pn
10years 0,19 0,44% 1,1%
18years 0,23 0,52% 1,3%
DriftsderivedfromTest8000h125C,100%Pn,Drift0,5%

6.26.2.6 Chip, Thin Film, high precision resistors (type UMA


and PHR)
Timelaw:cubicrootoftime
Temperaturelaw:Arrhenius,Ea=0,28eV

46
ECSSQTM3012A
12October2010

DriftsatTcase+50 55C 85C


%Pn
10years 0,04% 0,09%
18years 0,05% 0,11%
Note1:thisdataissupersededbythedataprovidedinthedetailed
specification
Note2:EoLdatadoesnotaccountforthesolderingprocessdrift.
Note3:orR/R=100E6forNiCrThinFilmChipwhicheverishigher.
Note4:derivedfromTest8000h,85C,P=70mW,Drift0,1%

6.26.2.7 Networks
Applysamedriftvaluesasthediscretecounterparts.

6.26.2.8 Heaters

Parameters Drifts
5years 10years 18years
Heaters 0,6% 0,8% 1%
DR/R

6.26.3 Data source and statistics

6.26.3.1 Metal film (RNC except RNC90)


Nodataavailable.

6.26.3.2 Metal film (RLR)


Nodataavailable.

6.26.3.3 Foil (RNC90)


Nodataavailable.

6.26.3.4 Wire-wound power resistors (Type RWR, RER)


Nodataavailable.

6.26.3.5 Chip Thin Film Resistor (Type RM), network


Resistor;
Nodataavailable.

47
ECSSQTM3012A
12October2010
6.26.3.6 Chip, Thin Film, high precision resistors (type UMA
and PHR)

Integrityassessment Missionlifecoverage 18Yearsat85C
Confidencelevelindicator High

6.26.3.7 Networks
Nodataavailable.

6.26.3.8 Heaters
Nodataavailable.

48
ECSSQTM3012A
12October2010

6.27 Thermistors family-group code: 11-01 to 11-03

6.27.1 Drift laws


Nodataavailable.

6.27.2 End-of-life drifts



Parameters Drifts
Technology Temperature
0100C OtherTemperature

Resistance Platinium Initialtolerance Add0,5%totheinitial
PTCthermistor Wirewound tolerance

Platinium Nodataavailable Nodataavailable


ThinFilm
Ceramic Nodataavailable Nodataavailable
NTCthermistor Manufacturerdata:Betatherm

6.27.3 Data source and statistics


Nodataavailable.

49
ECSSQTM3012A
12October2010

6.28 Transistors: bipolar family-group code: 12-01 to 12-


04 and 12-09

6.28.1 Drift laws


a. Timelaw:linear,quadraticlawtobechecked
b. Temperaturelaw:Arrhenius,withactivationEnergyEa=0,7eV

6.28.2 End-of-life drifts



Vce:(%) 55C 85C 110C
10years 0,05% 0,38% 1,66%
18Years 0,09% 0,68% +3%

Vbe:(%) 55C 85C 110C
10years 0,02 0,13% 0,56%
18Years 0,03% 0,23% +1%

Icbo:(%) 55C 85C 110C
10years +0,4% +9,8% +100%
18Years +0,7% +18% +180%

Icbx:() 55C 85C 110C
10years
18Years
Icbx:()
Tobestudied

Gain: 55C 85C 110C
10years
18Years 0,13% 1,5% 7%

50
ECSSQTM3012A
12October2010

BVceo,BVces, 55C 85C 110C


BVceo:
(%ofspecified
minimumvalue)
10years NodriftvaluesareproposedforBreakdownVoltageswhich
18Years aretreatedintermsofderating
DataderivedfromLifeTest3000hatTjstress200C
Equivalentto19yearsatTj=110C

6.28.3 Data source and statistics



Integrityassessment Missionlifecoverage 18yearsat110C
Confidencelevelindicator Good

51
ECSSQTM3012A
12October2010

6.29 Transistors: FET family-group code: 12-05 and 12-


06

6.29.1 Drift laws


Nodataavailable.

6.29.2 End-of-life drifts


VGS(th):TBD%
Igss:Withinmaximumspecifiedvalue
Idss:Withinmaximumspecifiedvalue
Onstateresistance:Withinmaximumspecifiedvalue

6.29.3 Data source and statistics


Nodataavailable.

52
ECSSQTM3012A
12October2010

6.30 Transistors: RF: bipolar family-group code: 12-10,


12-11, 12-13

6.30.1 Drift Laws


Nodataavailable.

6.30.2 End-of-life drifts


Nodataavailable.

6.30.3 Data source and statistics


Nodataavailable.

53
ECSSQTM3012A
12October2010

6.31 Transistors: RF: FET family-group code: 12-12, 12-


14, 12-15(FET), 12-16(FET)

6.31.1 Drift laws


ForGaAs
Timelaw:Squareroot
Temperaturelaw:Arrhenius
ActivationEnergy:Ea=1.1eVforLowlevelonGainandConsumption.
ActivationEnergy:Ea=1eVforPower>1WonConsumption

6.31.2 End-of-life drifts

6.31.2.1 Si FETs

Parameters Drifts
Pinchoffvoltage(Vp) 10%

Gateleakagecurrent(IGS) 5worstcaseoperationalvalue
DraincurrentforVGS=0(IDSS) NormallyON:20%
NormallyOFF:5initialvalue
DraincurrentforVGSthreshold NormallyON:5initialvalue
(IDS@Vth) NormallyOFF:20%
Transconductance(gm) 25%
Gain
OutputPower
DatakeptfromformerECSSQ6011Aforinformationonly.

6.31.2.2 Low level GaAs FETs


Relevantparameters:
Gain(dBpertransistorstage)
Consumption(%)

54
ECSSQTM3012A
12October2010
6.31.2.3 Power GaAs FETs (Pout <1W)
Relevantparameters:
OutputPower(dBpertransistorstage)
Consumption(%)
Preliminarydata.

6.31.3 Data source and statistics

6.31.3.1 Si FETs
Nodataavailable.

6.31.3.2 Low level GaAs FETs



Integrityassessment Missionlifecoverage 18years,115C
Confidencelevelindicator Fair

6.31.3.3 Power GaAs FETs (Pout <1W)


Integrityassessment Missionlifecoverage 18years,115C
Confidencelevelindicator Fair

55
ECSSQTM3012A
12October2010

6.32 Wires and cables family-group code: 13-01 to 13 03

6.32.1 Drift laws


Nogenericdataavailable.

6.32.2 End-of-life drifts


Nogenericdataavailable.

6.32.3 Data source and statistics


Generic.

56
ECSSQTM3012A
12October2010

6.33 Opto-electronics family-group code: 18-01 to 18-05

6.33.1 Drift laws


Nodataavailable.

6.33.2 End-of-life drifts


Relevantparameters.

Parameters Drifts
Lightemittingdiodes
Lightoutputpower
OptocouplerAgeingcoefficient
forcurrenttransferratio
Phototransistor
Collectorleakagecurrent(Iceo)

6.33.3 Data source and statistics


Nodataavailable.

57
ECSSQTM3012A
12October2010

6.34 RF passive components: family-group-code: 30-01,


30-07, 30-09, 30-10 and 30-99

6.34.1 Drift laws


Nodataavailable.

6.34.2 End-of-life drifts


Tobedefined.

6.34.3 Data source and statistics


Nodataavailable.

58
ECSSQTM3012A
12October2010

6.35 Fibre optic components: fibre and cable: family-


group-code: 27-01

6.35.1 Drift laws


Nodataavailable.

6.35.2 End-of-life drifts


Tobedefined.

6.35.3 Data source and statistics


Nodataavailable.

59
ECSSQTM3012A
12October2010

6.36 Hybrids

6.36.1 Drift laws


Nodataavailable.

6.36.2 End-of-life drifts


Tobedefined.

6.36.3 Data source and statistics


Nodataavailable.

60
ECSSQTM3012A
12October2010

Annex A (informative)
Family and group codes

This annex contains an extract from the European preferred parts list (EPPL)
and it lists all the parts referred to in this Technical Memorandum providing
theirfamilyandgroupcodes.

Family Group Family Group


code code
01 01 Capacitors Ceramic
01 02 Capacitors CeramicChip
01 03 Capacitors Tantalumsolid
01 04 Capacitors Tantalumnonsolid
01 05 Capacitors Plasticmetallized
01 06 Capacitors Glass
01 07 Capacitors Mica
01 09 Capacitors Aluminiumsolid
01 10 Capacitors Feedthrough
01 11 Capacitors Semiconductor

02 01 Connectors Circular
02 02 Connectors Rectangular
02 03 Connectors Printedcircuitboard
02 07 Connectors Microminiature
02 09 Connectors Rackandpanel

03 01 Piezoelectric Crystalresonator
devices

04 01 Diodes Switching
04 02 Diodes Rectifier
04 03 Diodes Voltageregulator
04 04 Diodes Voltagereference/zener
04 05 Diodes RF/microwaveSchottkySi

61
ECSSQTM3012A
12October2010

04 06 Diodes Pin
04 08 Diodes Transientsuppression
04 10 Diodes Highvoltagerectifier
04 11 Diodes MicrowavevaractorGaAs
04 12 Diodes Steprecovery
04 13 Diodes MicrowavevaractorSi
04 14 Diodes Currentregulator
04 15 Diodes MicrowaveSchottkyGaAs
04 16 Diodes RF/microwavePIN
04 17 Diodes MicrowaveGUNNGaAs

05 01 Filters Feedthrough

06 01 Fuses All

07 01 Inductors RFcoil
07 02 Inductors Cores
07 03 Inductors Chip

08 10 Microcircuits Microprocessors/microcontrollers/
peripherals
08 20 Microcircuits MemorySRAM
08 21 Microcircuits MemoryDRAM
08 22 Microcircuits MemoryPROM
08 23 Microcircuits MemoryEPROM
08 24 Microcircuits MemoryEEPROM
08 29 Microcircuits Memoryothers
08 30 Microcircuits Programmablelogic
08 40 Microcircuits ASICtechnologiesdigital
08 41 Microcircuits ASICtechnologieslinear
08 42 Microcircuits ASICtechnologiesmixed
analogue/digital
08 50 Microcircuits Linearoperationalamplifier
08 51 Microcircuits Linearsampleandholdamplifier
08 52 Microcircuits Linearvoltageregulator
08 53 Microcircuits Linearvoltagecomparator
08 54 Microcircuits Linearswitchingregulator
08 55 Microcircuits Linearlinedriver
08 56 Microcircuits Linearlinereceiver

62
ECSSQTM3012A
12October2010

08 57 Microcircuits Lineartimer
08 58 Microcircuits Linearmultiplier
08 59 Microcircuits Linearswitches
08 60 Microcircuits Linearmultiplexer/demultiplexer
08 61 Microcircuits Linearanalogtodigitalconverter
08 62 Microcircuits Lineardigitaltoanalogueconverter
08 69 Microcircuits Linearotherfunctions
08 80 Microcircuits Logicfamilies
08 99 Microcircuits Miscellaneous

09 01 Relays Nonlatching
09 02 Relays Latching

10 01 Resistors Metaloxide
10 02 Resistors Wirewoundprecisionincludingsurface
mount
10 03 Resistors Wirewoundchassismounted
10 04 Resistors Variabletrimmers
10 05 Resistors Composition
10 07 Resistors Shunt
10 08 Resistors Metalfilm
10 09 Resistors Chipall
10 10 Resistors Networkall
10 11 Resistors Heaters,flexible

11 01 Thermistors Temperaturecompensating
11 02 Thermistors Temperaturemeasuring
11 03 Thermistors Temperaturesensor

12 01 Transistors Lowpower,NPN<2W
12 02 Transistors Lowpower,PNP<2W
12 03 Transistors Highpower,NPN>2W
12 04 Transistors Highpower,PNP>2W
12 05 Transistors FETNchannel
12 06 Transistors FETPchannel
12 09 Transistors Switching
12 10 Transistors RF/microwaveNPNlowpower/low
noise
12 11 Transistors RF/microwavePNPlowpower/lownoise

63
ECSSQTM3012A
12October2010

12 12 Transistors RF/microwave
FETNchannel/Pchannel
12 13 Transistors RF/microwavebipolarpower
12 14 Transistors RF/microwaveFETpowerSi
12 15 Transistors MicrowavepowerGaAs
12 16 Transistors MicrowavelownoiseGaAs

13 01 Wiresandcables Lowfrequency
13 02 Wiresandcables Coaxial
13 03 Wiresandcables Fibreoptic

16 01 Switches StandardDC/ACpowertoggle

Family Group Family Group


code code
18 01 Optoelectronics Optocoupler
18 02 Optoelectronics LED
18 03 Optoelectronics Phototransistor
18 04 Optoelectronics Photodiode/sensor
18 05 Optoelectronics Laserdiode

27 01 Fibreoptic Fibre/cable
components

30 01 RFpassivedevices Coaxialcouplers
30 07 RFpassivedevices Isolator/circulator
30 09 RFpassivedevices Coaxialpowerdividers
30 10 RFpassivedevices Coaxialattenuators/loads
30 99 RFpassivedevices Miscellaneous

64
ECSSQTM3012A
12October2010

Bibliography and reference documents

#EEEmanufacturer
RD7 VishayVSDTN00050407

#Agency
RD3 ReportsasperESTECContract13474/99/NL/MV
RD4 RAC Reliable application of Capacitor , RAC parts selection, application
andcontrolseries,1996.
RD5 JPLreliabilityanalyseshandbook,D5703
RD6 CNESROCNERS9065,WCADB,Ed1Rev0,December1995

#Industry
RD2 : Thales Alenia Space Company standard instruction and data base for
dependability analysis. Ref.: 100141982FENissue 2 (13 May 2007). Also proposed as
common Astrium/Alcatel data base in meeting MOM/ECSSQ6011/WG/OO1 , 1819
march04

#ECSS
ECSSQST30 SpaceproductassuranceDependability
ECSSQHB3001 SpaceproductassuranceWorstCaseCircuitAnalysis
ECSSQST3011 SpaceproductassuranceDeratingEEEComponent
ECSSEST1012 Space engineering Method for calculation of radiation dose and
marginpolicy
gil1 : Space Product Assurance : Derating and endoflife parameter drifts Electrical,
electronicandelectromechanicalcomponentsRef.:ECSSQ6011A(7September2004)

#Datasourcecollection
EoL_Datastatistics_CNES_DiodesandBipolar.zip,30July2009
DatasourceandStatisticsforECSSTM3012_RFFET_tas.xls,05October2009
DatasourceandStatisticsforECSSTM3012_Capa_ast.xls

65

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