AOT11N60/AOTF11N60

600V,11A N-Channel MOSFET

General Description Product Summary

The AOT11N60 & AOTF11N60 have been VDS 700V@150

fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 11A
process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing
offline power supply designs. 100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11N60L & AOTF11N60L

Top View
TO-220 TO-220F
D

G
S
D S
G D S
AOT11N60 G
AOTF11N60

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol AOT11N60 AOTF11N60 AOTF11N60L Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS 30 V
Continuous Drain TC=25C 11 11* 11*
ID
Current TC=100C 8 8* 8* A
Pulsed Drain Current C IDM 39
Avalanche Current C IAR 4.8 A
Repetitive avalanche energy C EAR 345 mJ
Single plused avalanche energy G EAS 690 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25C 272 50 37.9 W
PD
Power Dissipation B Derate above 25oC 2.2 0.4 0.3 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 C
Thermal Characteristics
Parameter Symbol AOT11N60 AOTF11N60 AOTF11N60L Units
Maximum Junction-to-Ambient A,D RJA 65 65 65 C/W
Maximum Case-to-sink A RCS 0.5 -- -- C/W
Maximum Junction-to-Case RJC 0.46 2.5 3.3 C/W
* Drain current limited by maximum junction temperature.

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 AOT11N60/AOTF11N60

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250A, VGS=0V, TJ=25C 600
BVDSS Drain-Source Breakdown Voltage
ID=250A, VGS=0V, TJ=150C 700 V
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250A, VGS=0V 0.67 V/ oC
/TJ
VDS=600V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
VDS=480V, TJ=125C 10
IGSS Gate-Body leakage current VDS=0V, VGS=30V 100 n
VGS(th) Gate Threshold Voltage VDS=5V ID=250A 3.3 3.9 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A 0.56 0.65
gFS Forward Transconductance VDS=40V, ID=5.5A 12 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.73 1 V
IS Maximum Body-Diode Continuous Current 11 A
ISM Maximum Body-Diode Pulsed Current 39 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1320 1656 1990 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 100 146 195 pF
Crss Reverse Transfer Capacitance 6.5 11.2 16 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3
SWITCHING PARAMETERS
Qg Total Gate Charge 24 30.6 37 nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=11A 9.6 nC
Qgd Gate Drain Charge 9.6 nC
tD(on) Turn-On DelayTime 39 ns
tr Turn-On Rise Time VGS=10V, VDS=300V, ID=11A, 58 ns
tD(off) Turn-Off DelayTime RG=25 92 ns
tf Turn-Off Fall Time 42 ns
trr Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/s,VDS=100V 400 500 600 ns
Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/s,VDS=100V 4.7 5.9 7.1 C
A. The value of R JA is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25, Starting TJ=25C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT11N60/AOTF11N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 100
10V -55C
6.5V VDS=40V
16

10
12
ID (A)

ID(A)
6V 125C
8
1

4
VGS=5.5V 25C

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

1.4 3

1.2 Normalized On-Resistance 2.5 VGS=10V

ID=5.5A
2
1.0
RDS(ON) ()

1.5
0.8
VGS=10V 1

0.6
0.5

0.4 0
0 4 8 12 16 20 24 -100 -50 0 50 100 150 200
ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1.0E+02

1.0E+01
1.1 40
BVDSS (Normalized)

1.0E+00
125C
1.0E-01
IS (A)

1
1.0E-02 25C

1.0E-03
0.9
1.0E-04

0.8 1.0E-05
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0

TJ (C) VSD (Volts)

Figure 5:Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E)

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 AOT11N60/AOTF11N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=480V Ciss
ID=11A
12
1000

Capacitance (pF)
Coss
VGS (Volts)

9
100
6

10
3 Crss

0 1
0 10 20 30 40 50 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100

10s 10s
RDS(ON)
10 limited 10 RDS(ON) 100s
100s limited
ID (Amps)

ID (Amps)

1ms
1 1
1ms
10ms
DC
0.1s
0.1 TJ(Max)=150C 0.1 TJ(Max)=150C 1s
TC=25C TC=25C DC

0.01 0.01
1 10 100 1000 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe
Operating Area for AOT11N60 (Note F) Operating Area for AOTF11N60 (Note F)

100 12

10s 10
RDS(ON)
10
Current rating ID(A)

limited 100s
8
ID (Amps)

1ms
1 6
10ms
0.1s 4
0.1 TJ(Max)=150C 1s
TC=25C DC
2

0.01 0
1 10 100 1000 0 25 50 75 100 125 150
VDS (Volts) TCASE (C)
Figure 11: Maximum Forward Biased Safe Figure 12: Current De-rating (Note B)
Operating Area for AOTF11N60L (Note F)

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 AOT11N60/AOTF11N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
ZJC Normalized Transient

TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RJC=0.46C/W
1

0.1 PD

Ton
0.01
T
Single Pulse

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 13: Normalized Maximum Transient Thermal Impedance for AOT11N60(Note F)

10
D=Ton/T In descending order
ZJC Normalized Transient

TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RJC=2.5C/W

0.1
PD

0.01 Ton
T
Single Pulse

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)

10
D=Ton/T In descending order
ZJC Normalized Transient

TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RJC=3.3C/W

0.1
PD

0.01 Ton
T
Single Pulse

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)

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 AOT11N60/AOTF11N60

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

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