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Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
T C = 25 C 11
T C = 100 C 7
Pulsed drain current, t p limited by T jmax ID puls 28
Avalanche energy, single pulse EAS 340 mJ
ID = 5.5 A, V DD = 50 V
Avalanche energy, repetitive t AR limited by T jmax 1) EAR 0.6
ID = 11 A, V DD = 50 V
Avalanche current, repetitive t AR limited by T jmax IAR 11 A
Reverse diode dv/dt dv/dt 40 V/ns
IS=11A, V DS=480V, T j=125C
Gate source voltage VGS 20 V
Gate source voltage AC (f >1Hz) VGS 30
Power dissipation, T C = 25C Ptot 125 W
Operating and storage temperature Tj , Tstg -55... +150 C
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 80 V/ns
V DS = 480 V, ID = 11 A, Tj = 125 C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, wavesoldering T sold - - 260 C
1.6 mm (0.063 in.) from case for 10s
1Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.
Tj External Heatsink
R th1 R th,n T case
P tot (t)
T amb
110 10 1
100
P tot
90
ID
80
0
70 10
60
50
40 -1 tp=0.001 ms
10
30 tp=0.01 ms
tp=0.1 ms
20 tp=1 ms
10 DC
10 -2
0 0 1 2 3
0 20 40 60 80 100 120 C 160 10 10 10 V 10
TC VDS
Vgs = 6.5V
ID
10 -1 25
Vgs = 6V
20
D = 0.5
10 -2
D = 0.2
D = 0.1 15
D = 0.05
D = 0.02
10
10 -3 D = 0.01
single pulse
5
10 -4
-7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 4 8 12 16 20 V 26
tp VDS
R DS(on)
16 Vgs = 6.5V Vgs = 8.5V
Vgs = 6V 1.6 Vgs = 20V
14
ID
1.5
12 1.4
10 1.3
1.2
8
1.1
6
1
4
0.9
2 0.8
0 0.7
0 4 8 12 16 20 V 26 0 4 8 12 16 20 A 28
V DS ID
1.8
ID
1.6 25
1.4 Tj = 150?C
20
1.2
1 15
0.8
0.6 10
98%
0.4 typ
5
0.2
0 0
-60 -20 20 60 100 C 180 0 2 4 6 8 10 12 14 16 V 20
Tj VGS
V
A
10
IF
8
6
10 0
T j = 25 C typ
4
T j = 150 C typ
T j = 25 C (98%)
2
T j = 150 C (98%)
10 -1
0
0 10 20 30 40 50 nC 70 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD
8 250
EAS
IAR
7
200
6
5 Tj(START) =25C
150
4
3 Tj(START) =125C
100
2
50
1
0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 20 40 60 80 100 120 C 160
t AR Tj
V
W
V (BR)DSS
680
P AR
660 200
640
150
620
600 100
580
50
560
540 0 4 5 6
-60 -20 20 60 100 C 180 10 10 Hz 10
Tj f
5
C
4.5
10 2 4
Coss
3.5
3
2.5
1 2
10 Crss
1.5
1
0.5
10 0
0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
V DS VDS
1100
1100
1000
Qrr [nC]
Qrr [nC]
900 Tj = 125C
1000
800
900 700
600 Tj = 25C
800
500
400
700
300
600 200
25 50 75 C 125 1 2 3 4 5 6 7 8 9 A 11
Tj ID
1500
Tj = 125C
1400
Qrr [nC]
1300
1200
1100
Tj = 25C
1000
900
800
700
600
100 200 300 400 500 600 700 A/s 900
di/dt
PG-TO-220-3-1, PG-TO220-3-21
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.