Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8

By D. A. Neamen Exercise Solutions

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Chapter 8
Exercise Solutions Lp D p po

Ex 8.1 8 5 10 8 6.325 10 4

n po
n2
i
1.5 10 10 2

4.5 10 3
cm

Na 5 1016
cm 3

n 2
1.5 10 10 2
n po
n2
i
1.8 10 6 2

p no i
1.125 10 4 c Na 8 1015
Nd 2 1016
3 4.05 10 4 cm 3
m
V n i2
1.8 10 6 2

n p x p n po exp a
p no
Nd

2 1016
Vt
1.62 10 4 cm 3

4.5 10 exp
0.650

3
eD n n po eV a
0.0259
Jn xp Ln
exp 1
3.57 10 14 cm 3 kT
V
p n x n p no exp a

1.6 10 210 4.05 10
19 4

Vt
4.583 10 3

1.125 10 4 exp
0.650

0.0259 1.05
exp 1
8.92 10 14 cm 3 0 .0259

We have that

n p x p N a and p n x n N d

J n x p 1.20 A/cm 2
so low injection applies. eD p p no eVa
_______________________________________ J p xn exp 1
Lp kT
Ex 8.2
1 Dn 1 Dp
1.6 10 8 1.62 10
19 4

J s en 2

i
N a no N d po 6.325 10 4


1.6 10 19 1.8 10 6 2
1.05
exp 1
0.0259

1 210

1 8
J p x n 0.1325 A/cm 2
7
8 10
15
10 2 10 16 5 10 8 The total current density is:
J s 3.30 10 A/cm 18 2
J T J n x p J p xn
_______________________________________ 1.20 0.1325
J T 1.33 A/cm 2
Ex 8.3
_______________________________________
We find
Ln D n no Ex 8.4
210 10 7 4.583 10 3 In the n-region, for N d 2 10 16 cm 3 ,
cm
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
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n 6000 cm 2
/V-s 1 207 1 9.8

J e n N d n 2 10
15
5 10 8
8 10 16 5 10 8
or 17
or J s 1.677 10 A/cm 2
J 1.3325 (b)
n
e n N d
1.6 10 19

6000 2 1016 V bi 0.0259 ln

2 1015 8 1016
0.0694 V/cm 1.8 10 6 2

In the p-region, for N a 8 10 15 cm 3 , 1.174 V
p 320 cm 2 /V-
2 s Vbi V R N a N d
1/ 2

cm W
N N
J e p N a p e a d
or

213.1 8.85 10 14 1.174 5
1.6 10 19
J 1.3325
p
e p N a
1.6 10 19 320 8 10 15
2 10 15 8 10 16
1/ 2

3.25 V/cm
_______________________________________

2 10 8 10
15 16

or W 2.141 10 4 cm
Ex 8.5
From Example 8.5, we have
E g eV a 2 E g eV a1

kT2 kT1
Let T2 310 K, T1 300 K,
E g 1.42 eV, en i W
J gen
and V a1 1.050 V. 2 0
Then
1.42 V a 2

1.42 1.050

1.6 10 1.8 10 2.14110
19 6 4

310 300 2 5 10 8

which yields
J gen 6.166 10 10 A/cm 2
V a 2 1.0377 V
J gen 6.166 10 10
so V 1.0377 1.050 0.0123 V (c) 3.68 10 7
or V 12.3 mV per 10 C increase Js 1.677 10 17
in _______________________________________
temperature.
_______________________________________ Ex 8.7
eni2 Dn
Ex 8.6 I Sn A
1 Na no
Dn 1 Dp
(a) J s en i
2

Na n0 N d p0
1.6 10 1.5 10
10 2

19
3 25
10

1.6 10 19 1.8 10 6 2
2 10 15
5 10 7
or
I Sn 1.273 10 13 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
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1
I Sp A
eni2 Dp
C d
I pO pO I nO nO

Nd po 2Vt
So

1.6 10 1.5 10
10 2 (a)

19
10
10 3
8 10 16
10 7 Cd
1
2 0.0259

7.511 10 6 10 7
or
I Sp 4.5 10 15 A
2.125 10 4 5 10 7
Then
or C d 2.07 10 F 2.07 nF 9
I S I Sn I Sp 1.318 10 13 A
(b)
Va
(a) I D I S exp

Cd
1
2 0.0259

7.617 10 5 10 7
Vt

2.155 10 3 5 10 7

1.318 10 exp
0.550
13

or C d 2.09 10 F 20.9 nF 8
0.0259
2.2 10 4 A _______________________________________

(b) I D 1.318 10
13
exp 0.610

0.0259
2.23 10 3 A Test Your Understanding Solutions
Now
Vt TYU 8.1
0.0259
(a) rd 118
ID 2.2 10 4
n po
n i2


1.8 10 6 2

6.48 10 5 cm
0.0259
(b) rd 11.6 Na 5 1016
2.23 10 3 3

p no
n i2


1.8 10 6 2

6.48 10 4 cm
Nd 5 1015
3

For V a max ,
We find
V
V p n x n p no exp a
I pO I Sp exp a ,
Vt
Vt
so that
V
I nO I Sn exp a pn xn 0.1 N d
Vt V a Vt ln Vt ln

Then
p no p no
(a) I pO 7.511 10 6 A; 0.1 5 10 15
0.0259 ln

4
I nO 2.125 10 4 A 6.48 10
(b) I pO 7.617 10 5 A; V
or a max 1. 067 V
_______________________________________
I nO 2.155 10 3 A

We find TYU 8.2

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
en i2 Dn V or I p 5.44 mA
(a) I n A exp a _______________________________________
Na no Vt

1.6 10 1.5 10
10 2

19
3
10
5 1016

25 0.625
7
exp
5 10 0.0259
or I n 1.54 10 4 A 0.154 mA TYU 8.4
Dp V
Va
en i2 (a) J J s exp
(b) I p A exp a
Nd po Vt Vt
1 Dn 1 Dp
J s eni2
1.6 10 1.5 10
10 2
no N d po

19
3 Na
10
1 1016
1.6 10 19 1.5 10 10 2

10 0.625
exp 1 25 1 10
10 7
0.0259 7

2 10
15
10 8 10 16 10 7
or I p 1.09 10 3 A 1.09 mA
J s 2.891 10 10 A/cm 2
(c) I Total I n I p
Then

1.538 10 4 1.087 10 3
J 2.891 10 10 exp
0.35

0.0259
1.24 10 3 A
or I Total 1.24 mA 2.137 10 4 A/cm 2
(b)
_______________________________________
V bi 0.0259 ln

2 10 15 8 10 16
TYU 8.3
From TYU 8.2, I n 0.154 mA
1.5 10 10 2

Now 0.7068 V
We find
eD p p no V
I p A exp a
Wn Vt
W

211.7 8.85 10 14 0.7068 0.35
We find 1.6 10 19

p no
n i2


1.5 1010 2

2.25 10 4 cm 1/ 2
2 10 15 8 10 16
Nd 1016
3
2 10 8 10
15 16

Then 4.865 10 5 cm
Then

1.6 10 10 2.25 10
19 4
I p 10 3 eni W V
4 J rec exp a

2 10 2 o 2Vt
0.625
exp
0.0259
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________
V

1.6 10 1.5 10 4.865 10
19 10 5 I pO I Sp exp a ,
Vt
210 7

V
I nO I Sn exp a
0.35 Vt
exp
2 0.0259 We find
(a) I pO 1.181 10 6 A;
J rec 5.020 10 4 A/cm 2
I nO 9.71 10 5 A
J rec 5.020 10 4
(c) 2.35 (b) I pO 2.137 10 5 A;
J 2.137 10 4
_______________________________________ I nO 1.757 10 3 A
Now
TYU 8.5
1
en 2 Dn C d
I pO pO I nO nO

I Sn A i 2Vt
Na no
So
(a)

1.6 10 1.8 10
6 2 1

19
3 207 Cd 1.181 10 6 10 7
10 2 0.0259
2 10 15
5 10 7
or I Sn 5.274 10 21 A

9.71 10 5 5 10 7
9.40 10 10
F 0.940 nF
Dp (b)
eni2
I Sp A
Nd po Cd
1
2 0.0259

2.137 10 5 10 7

1.6 10 1.8 10
6 2

19
3 9 .8 1.757 10 3 5 10 7
10
8 10 16
10 7 1.70 10 F 17.0 nF 8

or I Sp 6.415 10 23
A _______________________________________

So I S I Sn I Sp 5.338 10 21 A
21 0.970
(a) I D 5.338 10 exp
0.0259
9.83 10 5 A
21 1.045
(b) I D 5.338 10 exp TYU 8.6
0.0259
From Figure 5.3, for N d 8 1016 cm 3 ,
1.78 10 3 A
Now n 900 cm 2 /V-s
Vt 0.0259 For N a 2 10 15 cm 3 ,
(a) rd 264
I D 9.828 10 5 p 480 cm 2 /V-s
0.0259 In the n-region,
(b) rd 14.6 e n N d
1.779 10 3
We have
1.6 10 19 900 8 10 16
11.52 ( -cm) 1

Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 8
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Rn
l

0.01 0.868
t 2 1.25 10 7 1.25 10 7 s
A 11.52 10 3 _______________________________________
In the p-region,
e p N a

1.6 10 19 480 2 10 15
0.1536 ( -cm) 1

Then

Rp
l

0.01 65.1
A 0.1536 10 3
The total resistance is
R R n R p 66
_______________________________________

TYU 8.7
ts IF
(a) erf
pO IF IR
Now
VR 2
IR 0.5 mA
RR 4
So
ts 1.75
erf 0.778
pO 1.75 0.5

ts
From Appendix G, 0.864
pO
So that

t s 0.864 10 7 0.746 10 7 s
2

(b)
t2 exp t 2 pO I
erf 1 0.1 R
pO t 2 pO IF
0.5
1 0.1 1.0286
1.75
By trial and error
t2
1.25
pO