Академический Документы
Профессиональный Документы
Культура Документы
M.Tech. (Microelectronics)/210101/DNB-11693 2
18. AFM and STM are used for
(A) Surface atomic layer analysis (B) Determining the energy of electrons
(C) Resistivity measurement (D) Generating diffraction patterns
19. Which of the following is true about LEED ?
(A) It is used for determining X-ray wavelength (B) It is low energy electron diffraction
(C) It is high energy electron diffraction (D) It is low energy electron depletion.
20. The difference between AFM and STM is
(A) STM is used for insulating materials and AFM for conductive materials
(B) STM is used for conductive materials and AFM for insulating materials
(C) STM is used for surface details and AFM for Inner details.
(D) STM is based on atomic forces and AFM on quantum tunnelling.
21. MOS inversion layers can be
(A) Weak (B) Moderate
(C) Strong (D) All of the above
22. Four probe method is used for
(A) Bulk resistivity measurements (B) Dielectric constant measurement
(C) Capacitance measurement (D) Inductance measurement
23. Lanthanum oxide is a
(A) Conductor (B) Semiconductor
(C) Dielectric (D) Superconductor
24. TEM gives the information about
(A) Inner crystal defects and structure (B) Surface feature details
(C) Atomic wise details (D) Tunnelling currents
25. The following is not an ion based technique
(A) RBS (B) SIMS
(C) SIMOX (D) None of the above
26. Silicon diodes do not emit light because
(A) Their bandgap is direct
(B) Their bandgap is indirect
(C) They are poorly fabricated for light emitting function
(D) None of the above
27. MEMS is
(A) Mechanical and microelectronics technology on a same chip
(B) Some form of a design tool
(C) A MOSFET model
(D) Process of doping
M.Tech. (Microelectronics)/210101/DNB-11693 4
37. X-ray lithography is used for
(A) Transferring of pattern over the resist
(B) Transferring the pattern directly over oxide
(C) Transferring the pattern directly over the silicon
(D) None of the above
38. AAS is used to determine
(A) The mass of the sample
(B) The surface characteristics
(C) The presence of heavy metal in the sample
(D) The charge on the sample
39. Which one of the following is widely used LED material ?
(A) GaAs (B) SiGe
(C) SiC (D) Si
40. Gain of a transistor falls at higher frequencies because
(A) Negative feedback due to parasitic capacitances
(B) Positive feedback due to parasitic capacitances
(C) Early effect
(D) Negative feedback due to emitter resistance
41. The core of an optical fibre is made of
(A) Plastic of Glasses (B) Semiconductors
(C) Metals (D) None of the above
42. Mass Spectrometry is an instrument in which
(A) Molecular Mass of the compound is determined
(B) The powdered sample is broken into vapours and then ions for analysis
(C) The ions are separated by the application of magnetic fields
(D) All of the above
43. LN2 is required for
(A) High temperature measurements
(B) Extreme high temperature measurements
(C) Low temperature measurements
(D) Extreme low temperature measurements
M.Tech. (Microelectronics)/210101/DNB-11693 6
53. In a MOSFET, the threshold voltage is a function of
(A) Substrate concentration (B) Oxide thickness
(C) Flatband voltage (D) All of the above
54. Which one of the following is used as a wet etchant in IC fabrication ?
(A) SIMS (B) PMMA
(C) XRD (D) HF
55. Body effect
(A) Raises threshold voltage (B) Reduces threshold voltage
(C) Has no effect on threshold voltage (D) First raises and then reduces
56. Strained silicon technology is used to
(A) Reduce drain to source currents in MOSFETs
(B) Raise drain to source currents in MOSFETs
(C) Has no effect on drain to source currents in MOSFETs
(D) Raises electron effective mass and increases scattering
57. EKV and HiSIM are
(A) An analytical instrument used in surface imaging
(B) MOSFET models
(C) Packaging materials
(D) None
58. The correct order of the electron mobility in the following semiconductors is
(A) Strained Si < bulk Si
(B) GaAs < Si
(C) Strained Si > bulk Si
(D) Si > GaAs > Ge
59. The transconductance of a MOSFET in the presence of high energy radiation
(A) Reduces (B) Increases
(C) Remains same (D) First increases and then decreases
60. S-Edit, TSPICE, IC station are the terms associated with
(A) IC fabrication process (B) VLSI design flow
(C) Testing techniques (D) MOSFET modelling techniques
61. Flicker noise in a MOSFET is
(A) High frequency noise (B) Low frequency noise
(C) Both high and low frequency noise (D) None
M.Tech. (Microelectronics)/210101/DNB-11693 8
70. 1T DRAM has
(A) Write, Read and refresh operations (B) Write and Read operations
(C) Read and refresh operations (D) Write and refresh operations
71. When a reverse bias of 3·4V is applied to P-N junction silicon diode, the effective
barrier potential is :
(A) 3·4 V (B) 4·1 V
(C) 5·4 V (D) 0 V
72. Which of the following law helps to estimate pins in a VLSI package ?
(A) Ohm’s law (B) Rent’s law
(C) Hook’s law (D) Fick’s law
73. A tunnel diode and a Zener diode operate in one of the following conditions
(A) Forward bias and reverse bias respectively
(B) Reverse bias and forward bias respectively
(C) Both reverse bias
(D) Both forward bias
74. Which of the following is true for the depletion width in a P-N Junction diode ?
(A) It increases with increase in reverse bias
(B) It decreases with increase in reverse bias
(C) Is independent of reverse bias
(D) It increases with increase in doping concentration
75. Which of the following devices is used for microwave frequencies ?
(A) GUNN Diode (B) MESFET
(C) IMPATT (D) All of the above
M.Tech. (Microelectronics)/210101/DNB-11693 10
ROUGH WORK