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1-3-2017 mem_mech.ppt
Rochester Institute of Technology
Microelectronic Engineering
OUTLINE
Force
Pressure
Stress, Strain and Hookes Law
Poissons Ratio
Simple Cantilever
Springs
Thermal Strain
Bi-metalic Actuator
Diaphragm
FORCE
F = ma (newton)
where m is mass in Kg
a is acceleration in m/sec2
gravitational acceleration is 9.8 m/sec2
newton (N) = 1 Kg 1 meter/s2
dyne = 1 gm 1 cm/s2
PRESSURE
P = F/A
PRESSURE UNITS
HOOKES LAW
Stress is the applied force per crossectional area, = F/A
Strain is the elongation per unit length, = L/L
y = yield strength
u = ultimate or maximum strength
b = rupture strength ( for brittle material u = b)
Stress,
u x
y = E
where
E is Youngs modulus
Thickness = 10 m
Diameter 75 mm
POISSONS RATIO
= - y / x ~ 0.3
y
X, Axial
Deformed
Force
x
Original
Rochester Institute of Technology
Microelectronic Engineering
y u E d
Yield Ultimate Knoop Youngs Density Thermal Thermal Poissos
Strength Hardness Modulus (gr/cm3) Conductivity Expansion Ratio
(1010 dyne/cm2) (Kg/mm2) (1012dyne/cm2) (w/cmC) (10-6/C)
10 dyne/cm2 = 1 newton/m2
HARDNESS
tensile
Kenneth L. Way, Jr. did his senior project on stress in silicon nitride
films as a function of the ratio of ammonia to dichlorosilane.
Samples were coated with various flows and stress was measured at
ADE corporation. The silicon nitride was etched off of the backside
of the wafer so that the stress curvature was due to the layer on the
front side only. Dr. Lane said the nitride runs at 1:10
(ammonia:dichlorosilane) ratios are rough on the pumping system.
Compressive Stress Tensile Stress
Stress in an 8000 A
Nitride Film
Tensile Stress
Tungsten
CVC 601
4 Target
500 Watts
50 minutes
5 mTorr Argon
Thickness ~ 0.8 m
Compressive Stress
EXAMPLE CALCULATION
1. Compare the ADE measured stress for standard nitride to the Dr.
Grande measured value.
7.79E9 dynes/cm2 to 900 Mpa
7790 E6 dynes/cm2
But 10 dynes/cm2 = 1 Pascal
So 779 Mpa = ~ 900 Mpa
2. Estimate the height difference for a 1mm length near the center
of a wafer caused by the resulting curvature from stress for the
standard 1500 A nitride deposition after removing nitride from
one side of the wafer.
SIMPLE CANTILEVER
F
Cantilever:
L
h
b
Ymax
Ymax = F L3/3EI
F = 1.5e-6 newtons
x=0 F
x
h
b
L Ymax
IDEAS
Length = 100 um
Width = 10 um
Thickness = 2 um Polysilicon
Force applied = 7.2 uN
Maximum Deflection = 2.0 um
ACCELEROMETER - EXAMPLE
x x=0
Proof Mass
h
b
L Ymax
ACCELEROMETER-EXAMPLE
CANTILEVER.XLS
0.00000015
0.0000001
0.00000005
Vout (volts)
-0.00000005
-0.0000001
-0.00000015
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Time (sec)
F=1N
Ymax = 10 um
Stress = 3.8E5 N/m2 SolidWorks
F=1N
Ymax = 1.6 um
Length = 1500 m Stress = 7.2E3 N/m2
Width = 600 m
Thickness = 20 m
Window ~ 300 x 300 m
Burak Baylav
Rochester Institute of Technology
Microelectronic Engineering
SPRINGS
L
h k
b
Ymax
Ymax = F L3/3EI
FOLDED SPRING
100 x100 m
100 x100 m
pads
pads
40 m
I
100 x100 m
pads
F
h
b
L/2
Ymax
Ymax = F L3/48EI
I I
40 m 40 m
THERMAL STRAIN
BI METALIC ACTUATORS
BI METALIC ACTUATORS
x x=0
h2
h1
b
L Y
The centroid is the neutral axis of the composite beam. The length of the
neutral axis never changes, NA= 0 , Y is the distance from the neutral axis to
the junction thus Y and are equivalent.
Total Stress = Thermal Stress + Mechanical Stress
Thermal Stress = T E
Mechanical Stress = E and = Y/r
10m
Aluminum
100m
Silicon
Rochester Institute of Technology
Microelectronic Engineering ANSYS Rob Manley
January 3, 2017, Dr. Lynn Fuller, Professor Page 46
MEMs Mechanical Fundamentals
TORSIONAL MIRROR
F Radius r
R
L
f = T L/(GJ)
where
f is angle in radians that it will twist
T is Torsion, Force x R
L is Length of round support
G is shear modulus, ~1/3 Young's modulus
J is polar moment of inertia,
for round cross section pr4/2
Rochester Institute of Technology
Microelectronic Engineering r is radius of bar
January 3, 2017, Dr. Lynn Fuller, Professor Page 50
MEMs Mechanical Fundamentals
EXCELL DIAPHRAGM CALCULATIONS
Stress at edge
Capacitance between
diaphragm and substrate
Electrostatic Force
Pull-in Voltage
Resonant Frequency
Points of
Maximum Stress
200m
RESISTOR LAYOUT
Vo1 Vsupply
R3
R1
R4
R2
Gnd Vo2
Two resistors parallel to edge near region of maximum stress and two resistors
perpendicular to the edge arranged in a full bridge circuit. If all resistors are of
equal value then Vout = Vo1-Vo2 = zero with no pressure applied.
Rochester Institute of Technology
Microelectronic Engineering
+5 Volts Vo2
The equation for stress at the center
edge of a square diaphragm (S.K.
R3 Clark and K.Wise, 1979)
R1
R4 Stress = 0.3 P(L/H)2 where P is
R2
pressure, L is length of diaphragm
edge, H is diaphragm thickness
Vo1 Gnd
For a 3000m opening on the back of
the wafer the diaphragm edge length L
is 3000 2 (500/Tan 54.74) = 2246
Rochester Institute of Technology
m
Microelectronic Engineering
5 Volts 5 Volts
No stress
Vo2-Vo1 = 0
R1=427 R3=427 R3=426.4
R1=427.6
Vo1=2.5v Vo2=2.5v
Vo1=2.4965v Vo2=2.5035v
R2=427 R4=427 R2=426.4 R4=427.6
With stress
Gnd Vo2-Vo1 = 0.007v
Gnd
= 7 mV
Rochester Institute of Technology
Microelectronic Engineering
ROUND DIAPHRAGM
diaphragm
Diaphragm: thickness ()
Displacement (y)
3PR 4[(1/)2-1]
4 2-1]
y= = (249.979)PR2 [(1/)
16E(1/)23 E(1/)
3
= Poissons Ratio
*The second equation corrects all units
E = Youngs Modulus, assuming that pressure is mmHg,
radius and diaphragm is m, Youngs
for Aluminum =0.35 Modulus is dynes/cm2, and the
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Microelectronic Engineering
calculated displacement found is m.
CAPTURED VOLUME
PV = nRT
F1 = force on diaphragm = external pressure times area of diaphragm
F2 = force due to captured volume of air under the diaphragm
F3 = force to mechanically deform the diaphragm
F1
rs h
h
rd d
Ad y
F2 + F3
y (m) P (N/m2)
0 0 P (N/m2) vs displacement y (m)
0.1 5103.44
0.2 10748.09
0.3 17025.03 3000000
0.4 24047
0.5 31955.23
0.6 40929.06 2500000
0.7 51199.69
0.8 63070.47 2000000
0.9 76947.31
1 93386.12
1.1 113169.1 1500000
1.2 137433.1
1.3 167895.7
1.4 207281.3 1000000
1.5 260184.8
1.6 335009.7
500000
1.7 448945.4
1.8 643513.4
1.9 1051199 0
2 2446196 0 0.5 1 1.5 2 2.5
rs h
h
rd d
SUMMARY
3PR 4[(1/)2-1] 1 p E h3
Round Ymax = fo = 2p 3 R2 mD(1-2)
16E(1/)23
Fixed-Fixed Ymax = F L3 1 42 E b h3
4Ebh3 fo = 2p L3 0.23mB
Beam
REFERENCES
1. Mechanics of Materials, by Ferdinand P. Beer, E. Russell Johnston, Jr.,
McGraw-Hill Book Co.1981, ISBN 0-07-004284-5
2. Electromagnetics, by John D Kraus, Keith R. Carver, McGraw-Hill Book
Co.1981, ISBN 0-07-035396-4
3. Etch Rates for Micromachining Processing, Journal of
Microelectromechanical Systems, Vol.5, No.4, December 1996.
4. Design, Fabrication, and Operation of Submicron Gap Comb-Drive
Microactuators, Hirano, et.al. , Journal of Microelectromechanical Systems,
Vol.1, No.1, March 1992, p52.
5. Theres Plenty of Room at the Bottom, Richard P. Feynman, Journal of
Microelectromechanical Systems, Vol.1, No.1, March 1992, p60.
6. Piezoelectric Cantilever Microphone and Microspeaker, Lee, Ried, White,
Journal of Microelectromechanical Systems, Vol.5, No.4, December 1996.
7. Crystalline Semiconductor Micromachine, Seidel, Proceedings of the 4th
Int. Conf. on Solid State Sensors and Actuators 1987, p 104
8. A survey of micro-actuator technologies for future spacecraft missions,R.G.
Gilbertson and J.D. Bausch, Conference on Practical Robotic Interstellar
Flight, Aug. 12, 1994, New York City
9. Fundamentals of Microfabrication, M. Madou, CRC Press, New York, 1997
Rochester Institute of Technology
Microelectronic Engineering