Title: To study the behavior of the change of BJT parameter on DC biasing of BJT

amplifier circuits.
Objective:
The following are the main objectives of this experiment:
To study the changes in BJT parameters by changing the transistor and
also by heating the transistor.
To study the difference in parameters of different BJT Amplifiers.
To analyze and understand the changes in the collector-emitter voltage VCE, with the
changes in the DC biasing of the BJT.
To learn how every transistor has its own DC bias point.
Theory:
As the temperature of a transistor increases, the collector current will increase because

1. Intrinsic semiconductor current between the collector and base increases with
temperature. Its flow through the biasing resistors drives the base more positive,
increasing forward bias on the base-emitter diode. For a silicon diode Simpson quotes an
increase of 2 nA for a 10C temperature rise.

2. The base-emitter voltage required for a given collector current will decrease. This
decrease is about -2.5 mV/C.

An increase in temperature produces an increase in the minority carrier current, but a negative
change in VBE, so both effects lead to an increase in collector current with temperature. Since the
emitter resistance shows up in the denominator of both terms, this shows that a large value of RE
is desirable for temperature stability. The presence of RE provides negative feedback which
stabilizes the circuit against changes in temperature, supply voltage, etc., but it also decreases the
voltage gain.

Fixed bias unstable amplifier circuit is the amplifier circuit which neither has any feedback
resistance RE connected to the emitter terminal nor there is any potential divider circuit before
the base. In this type of circuit, changes in produce large variations in the Q-point (bias point),
and the collector-emitter voltage VCE varies significantly. It is called unstable because the
saturation point for IC and VCE is reached very early with relatively small change in the value of
.

Fixed bias circuit with emitter current feedback implements a feedback resistance RE connected
to the emitter and hence, the stability in the bias point voltage VCE w.r.t the change in increases
i.e. there is lesser variation as compared to the previous circuit.
Potential divider bias circuit with emitter current feedback implements a potential divider circuit
before the base terminal, and the stability of the amplifier circuit increases further i.e. the bias
point voltage varies further w.r.t change in as compared to the previous circuit.
Procedure:
Proteus Simulation:
The fixed bias unstable amplifier circuit was implemented on the Proteus ISIS software
by using 2N3904 BJT first, with RB = 1 M, RC = 2 k, and VCC = 12V, and the bias
voltage VCE was measured with the help of the digital voltmeter. It was found to be
+6.07V.
The transistor was then replaced by 2N2222A and the rest of the circuit was kept the
same. The bias voltage VCE was found to be changed to +7.03V.
By applying 2N3055 and keeping the rest of the circuit same, VCE was found to be
+11.0V.
Practical simulation
Connect the circuit on bread board.
Connect the DC source at the supply terminal of the circuit and set the source to 12V.
Measure the DC voltage at the output and record it.
Heat the transistor with the help of soldering iron and observe the change in output
voltage.
Change the transistor and measure output voltage again and record.

Observations and Calculations:

Transis Before After

tor heating heating Simulated
Type VCE VCE VCE(V)
(V) (V)
5.54
2N3904 3.564 1.182
7.72 4.64 6.55
2N2222
A

2N3904: (VCE = 6.07V)

 2N2222A: (VCE = 7.03V)
Conclusions:
The following conclusions are drawn from the experiment:

An approximate relationship for the collector current change is:

The output voltage decreases with increase of temperature.

Output voltage is different for different transistors with same input i.e. every BJT has its
own parameters.
Amplification action of transistor is restricted by positive VCC and negative VCC which
mean only limited range of input signal in term of amplitude can be amplified.
The bias voltage for a BJT depends upon 1) Value of amplification factor 2)
Temperature of the transistor.
The increase in temperature of the BJT decreases the bias voltage while decreasing the
temperature increases the value of VCE.

Muhammad Samiullah Ilyas

2015-EE-126
10-Feb-2017