ELECTRONICS AND COMMUNICATIONS ENGINEERING

Electronic Circuits and Devices

- Section 8 -

1. Assertion (A): Hall Effect is used to find the type of semiconductor.

Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic
field the force on electrons and holes is in opposite directions.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

2. The fT of a BJT is related to its gm, C and C as follows.

A.

B.

C.

D.
Answer: Option D

3. When a p-n junction is forward biased. The width of depletion layer decreases.
A. True B. False
Answer: Option A

4. In which of the following case the rating of the transformer to deliver 100 watts of d.c.
power to a load, will be least?
A. Half wave rectifier
B. Full wave rectifier
C. Bridge type full wave rectifier
D. Three phase full wave rectifier
Answer: Option D

5. When a p-n Junction is forward biased

A. the current flow is due to electrons only
B. the majority carriers in both p and n materials are driven toward the junction.
C. the majority carriers in both p and n materials are away from the junction.
D. both (a) and (c).
Answer: Option B
6. In a JFET, the drain current is maximum when
A. VGS = 0
B. VGS is not zero but is slightly negative
C. VGS is negative
D. VGS is negative and equal to VDS
Answer: Option A

7. A potential difference is developed across a current carrying metal strip when the strip is
placed in a transverse magnetic field. The above effect is known as
A. Fermi's effect
B. Photo electric effect
C. Joule's effect
D. Hall's effect
Answer: Option D

8. In a zener diode
A. forward voltage rating is high
B. negative resistance characteristics exists
C. sharp breakdown occurs at low reverse voltage
D. none of the above
Answer: Option C

9. Which one of the following bipolar transistors has the highest current gain bandwidth
Product (fr) for similar geometry?
A. NPN germanium transistor
B. NPN silicon transistor
C. PNP germanium transistor
D. PNP silicon transistor
Answer: Option B

10. The depletion layer across a P+ n junction lies

A. mostly in the P+ region
B. mostly in n region
C. equally in both the P+ and n-region
D. entirely in the P+ region
Answer: Option A

11. An increase of reverse voltage decreases the junction capacitance.

A. True B. False
Answer: Option A
12. The maximum forward current in case of signal diode is in the range of
A. 1 A to 10 A
B. 0.1 A to 1 A
C. few milli amperes
D. few nano amperes
Answer: Option C

13. On which of the following effect do thermocouples work?

A. Thomson effect
B. Seeback effect
C. Peltier effect
D. Joule effect
Answer: Option B

14. Which of the following constitutes an active component?

A. Semiconductor device
B. Resistors
C. Capacitors
D. Inductors
Answer: Option A

15. Which of the following characteristics of a silicon p-n junction diode make it suitable for
use as ideal diode?
1. It has low saturation current.
2. It has high value of cut in voltage.
3. It can withstand large reverse voltage.
4. When compared with germanium diode, silicon diode shows a lower
degree of temperature dependence under reverse conditions.
Select the answer using the given below
A. 1 and 2
B. 1, 2, 3, 4
C. 2, 3, 4
D. 1, 3
Answer: Option B

16. Resistivity of carbon is around

A. 10 to 70 m-ohm-cm
B. 80 to 130 m-ohm-cm
C. 800 to 1300 m-ohm-cm
D. 8000 to 13000 m-ohm-cm
Answer: Option C

17. Which of the following is anti-ferromagnetic material?

A. CrSb
 B. NIO
C. MnO
D. All of the above
Answer: Option D

18. Assertion (A): The capacitance of a reverse biased pin diode is lower than that of
reverse biased p-n diode.
Reason (R): A PIN diode has an intrinsic layer between p and n regions.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

19. In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
A. 0.5 V
B. 15 V
C. - 0.5 V
D. - 15 V
Answer: Option A

20. In n channel JFET

A. ID and VDS are positive but VGS is negative
B. ID and VGS are positive but VDS is negative
C. VDS and VGS are positive but ID is negative
D. ID, VDS and VGS are all positive
Answer: Option A

21. Figure represents a

A. Esaki diode
B. Triac
C. Varactor
D. Gunn diode
Answer: Option C

22. Almost all resistors are made in a monolithic integrated circuit

A. during the entire diffusion
B. while growing the epitaxial layer
C. during the base diffusion
D. during the collector diffusion
Answer: Option A

23. The forbidden energy gap for silicon is

A. 0.12 eV
B. 1.12 eV
C. 0.72 eV
D. 7.2 eV
Answer: Option B

24. In energy band diagram of n type semiconductor, the donor energy level is
A. in valence band
B. in conduction band
C. slightly above valence band
D. slightly below conduction band
Answer: Option D

25. For an n-channel JEFT having drain source voltage constant if the gate source voltage
is increased (more negative) pinch off would occur for
A. high values of drain current
B. saturation values of drain current
C. zero drain current
D. gate current equal to the drain current
Answer: Option C

26. An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to
a level of 1022 m-3. What is the hole density assuming all donors to be ionized?
A. 107 m-3
B. 108 m-3
C. 1010 m-3
D. 106 m-3
Answer: Option D

27. The capacitor filter provides poor voltage regulation because

A. the increase in ripple with load current causes a decrease in average voltage
B. the increase in ripple with load current causes a increase in average voltage
C. filter promotes ripple at peak voltage
D. none of the above
Answer: Option A

28. If Vr is the reverse voltage across a graded P-N Junction, then the junction
capacitancecj is proportional to
A. (Vr)2 B. (Vr)n
-n
C. (Vr) D. (Vr)3/2
Answer: Option B

29. In the schematic representation of bipolar junction transistor, the direction of arrow
shows the direction of flow of
A. holes
B. electrons
C. holes in pnp and electrons in npn
D. electrons in pnp and holes in npn
Answer: Option A

30. Conductivity , mobility and Hall coefficient KH are related as

A. = KH
B. = KH
C. KH =
D. KH =()1.1
Answer: Option A

31. The forbidden band in semiconductors is of the order of

A. 6 eV
B. 1 eV
C. 10 eV
D. 0.01 eV
Answer: Option B

32. For an P-N-P transistor in normal operation its junction are biased as
A. emitter base : reverse, collector base : forward
B. emitter base : forward, collector base : reverse
C. emitter base : forward, collector base : forward
D. emitter base : reverse, collector base : reverse
Answer: Option B

33. A FET is to be operated as voltage variable resistor. For this drain to source voltage V DS
should be,
A. 74
B. = VP
C. < VP
D. > VP
Answer: Option C

34. Assertion (A): FET has characteristics very similar to that of pentode.
Reason (R): Both FET and pentode are voltage controlled devices.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
 C. A is true but R is false
D. A is false but R is true
Answer: Option A

35. The current gain of a bipolar transistor drops at high frequencies because of
A. transistor capacitance
B. high current effects in the base
C. parasitic inductive elements
D. the early effect
Answer: Option A

36. In an intrinsic semiconductor, the intrinsic charge concentration at any absolute

temperature T is proportional to
A. T B. T2
C. T3 D. T4
Answer: Option C

37. The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
A. generally less than that a doped semiconductor
B. i = eni (n - p)
C. i = eni (n + p)
D. i = ni (n - p)
Answer: Option C

38. The current due to thermionic emission is proportional to

A. T B. T2
3
C. T D. T4
Answer: Option B

39. For radiating ultraviolet rays, LEDs use

A. zinc sulfide
B. gallium arsenide
C. gallium phosphide
D. none of the above
Answer: Option A

40. Addition of a small amount of antimony to germanium will result in

A. formation of p-type semiconductor
B. more free electrons than holes in semiconductor
C. antimony concentrating on the edges of the crystal
D. increased resistance
Answer: Option A
41. Consider the following statements about conditions that make a metal semiconductor
contact rectifying
1. N type semiconductor with work function s more than work function M of
metal
2. N type semiconductor with work function s less than work function M of
metal
3. P type semiconductor with work function s more than work function M of
metal
4. P type semiconductor with work function s less than work function M of
metal.
Of these statements
A. 1 and 3 are correct
B. 2 and 3 are correct
C. 1 and 4 are correct
D. 2 and 4 are correct
Answer: Option A

42. Silicon diodes have __________ reverse resistance than germanium diodes.
A. a much smaller
B. a much larger
C. an infinite
D. a negligible
Answer: Option B

43. The kinetic energy of photoelectrons emitted by a photo sensitive surface depends on
A. intensity of the incident radiation
B. wavelength of the incident radiation
C. surface conditions of the surface
D. angle of incidence of radiation
Answer: Option B

44. When reverse bias is applied to a junction diode

A. minority carrier current is increased
B. majority carrier current is increased
C. potential barrier is lowered
D. potential barrier is raised
Answer: Option D

45. Which of the following statements regarding two transistor model of p-n-n-p device is
correct?
A. It explain only the turn on portion of the device characteristics
B. It explain only the turn off portion of the device characteristics
C. It explain only the negative region portion of the device characteristics
D. It explain all the regions of the device characteristics
Answer: Option D

46. Highest resistivity of the following is

A. nichrome B. constantan
C. metal D. manganin
Answer: Option A

47. Lowest noise can be expected in case of

A. carbon composition resistors
B. carbon film resistors
C. tin oxide resistors
D. metal film resistors
Answer: Option D

48. For a BJT, under the saturation condition,

A. IC = IB
B. IC = IB
C. IC is independent of all other parameters
D. IC < IB
Answer: Option D

49. When a semiconductor bar is heated at one end, a voltage across the bar is developed.
If the heated is positive the semiconductor is
A. P-type
B. n-type
C. intrinsic
D. highly degenerate
Answer: Option D