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npn pnp
EE-112 Basic Electronics Dr. Faraz Akram
4
npn pnp
E
n p n C E p n p C
C C
B B
B B
C C
+
-
VCB
VBC IC IC
-
IB -
+
+
IB
B VEC
B VCE
+
+
-
IE
IE VEB
VBE
+
- E
E
npn pnp
IE = IB + IC IE = IB + IC
= 0.7
=
Also, by Ohms law,
= =
Substituting
=
=
=
EE-112 Basic Electronics Dr. Faraz Akram
13
When = 0
Under this condition, there is a very small amount of collector
leakage current, , mainly due to thermally produced carriers.
Because is extremely small, it will usually be neglected in
circuit analysis so that = .
Saturation Region:
When Both Junctions are
forward Bias
Active region
When BE junction is forward Bias
& BC junction reverse Bias
BJT as an Amplifier
DC Uppercase Subscripts
, , , , , and
AC lowercase subscript
, , , , , and
Voltage gain:
= =
Since
EE-112 Basic Electronics Dr. Faraz Akram
31
BJT as a Switch
In part (a), the transistor is in the cutoff region because the BE-junction is not
forward-biased. In this condition, there is, ideally, an open between collector
and emitter,
()
() = () =