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Power Electronics
Chapter 2
Reference Textbook:
First Course on Power Electronics by Ned Mohan,
www.mnpere.com
Voltage Rating
Current Rating
Switching Speeds
On-State Voltage
10 8
Thyristor
Power (VA)
IGCT
10 6
IGBT
10 4
RDS ( on ) = 1/slope iD
iD
D iD VGS = 11V
Io
+ 9V iD
iD RDS (on ) = 1/slope
VDS D iD VGS = 11V
7V
G Io
+
+ 5V
9V
VGSG VDS VGS 7V VGS (th )
S
+ 0 5V
V 0 VGS (th ) VGS ( I o )
VGS VGS (thDS VGS
VGS S )
(a) 0 (b) VDS 0 VGS (th ) VGS ( I o )(c)
VGS
(a) (b) (c)
Figure 2-1 MOSFET: (a) symbol, (b) i-v characteristics, (c) transfer characteristic.
RDS ( on ) VDSS
2.5 to 2.7
C
iC
iC
+
VGE
G VCE
+
VGE
VCE
E
(a) (b)
Figure 2-2 IGBT: (a) symbol, (b) i-v characteristics.
USD/A
0.7
Pricing (USD/A) 1200 V IGBTs
0.6
0.5
0.4
0.3
0.2
0.1
0
1990 1995 2000 2005
A K
0 v AK
(a) (b)
Figure 2-3 Diode: (a) symbol, (b) i-v characteristic.
Line-frequency diodes
Fast-recovery diodes
Schottky diodes
SiC Schottky diodes
iD iD
+
RGG vDS on
+ VGG Io
Vin
Io
off
0
Vin vDS
(a) (b)
Figure 2-4 MOSFET in a switching power-pole.
vGS
iD vGS ( Io ) vGG
D
iD vGS (th )
G vDS
+ on B 0
vGG S Io t
0
Vin vDS
Vin A
iD Io
off
Io 0 vDS 0
Vin td ( on ) tri t fv t
to be 1750 C .
Solution The transfer characteristic of this MOSFET is shown in Fig. 2-6. It shows that
100 A
40 A
10 A
ID
1A
VGS
0.1 A
4.0 5.0 6.0 7.0 8.0 9.010.0
7.5V
if VGS = 7.5V is used, the current through the MOSFET will be limited to 40 A.
vGG
vGS
iD D
vGS ( Io )
vGS (th )
vDS iD
G on
vGG C 0
t
S Io
+ 0
Vin D Vin
Io
off vDS iD
Io
0 Vin vDS 0
td ( off ) t rv t fi t
50
40
30
vDS
20
iD
10
-10
0s 0.2us 0.4us 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
V(M2:d,M2:s) -I(V2)
Time
tc , on = tri + t fv
1
Switching Losses: Psw = Vin I o (tc , on + tc , off ) f s
2 tc , off = trv + t fi
Vin Vin
vDS vDS
Io
iD iD
0
tri t fv trv t fi t
tc , on tc , off
Vin I o Vin I o
psw psw
0
tc , on tc , off t
Copyright Ned Mohan 2008 15
Figure 2-8 MOSFET switching losses.
Gate Driver Integrated Circuits (ICs) with Built-
in Fault Protection
Vext = 12 V
VCC
vc
Switching Frequency
Selection of Transistors and Diodes
LII kconv Vy Iy,rms
Magnetic components Ap = rms
Ap =
kwJmaxBmax kwBmax Jmax fs
Capacitor Selection
C ESL ESR
50A
40A
30A
20A
10A
0A
1.0KHz 3.0KHz 10KHz 30KHz 100KHz 300KHz 1.0MHz
I(L2) I(L1) -I(V3)
Frequency
T j = Ta + ( R jc + R cs + R sa ) Pdiss
Pdiss Ta
Tj
Tc
Ts Ta
(a) (b)
Figure 2-11 Thermal design: (a) semiconductor on a heat sink, (b) electrical analog.
Copyright Ned Mohan 2008 21
Design Tradeoffs
size
Heatsink
Magnetics and
capacitors
fS
Vr
vc (t)
vr
0 t
dTs
Ts
q(t) 1
0 t
vc ( t )
d (t ) =
Vr
Qrr
I RRM
VFM
0
t
Vd , neg
50
40
30
20
10
-10
0s 0.2us 0.4us 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
V(M2:d,M2:s) -I(V2)
Time
vDS
0 t fv t
I RRM Io
iD
0 t
psw
0 t
tri
ta = trr
Figure 2A-2 Waveforms with diode reverse-recovery current.
Copyright Ned Mohan 2008 27
Summary
Design of a Switching Power-Pole
Type of Transistors
Switching Characteristics and Losses
Justification of an Ideal Switch
Thermal Design
Selection of the Optimum Switching
Frequency