This product complies with the RoHS Directive (EU 2002/95/EC).

Power Transistors

2SC5809
Silicon NPN triple diffusion planar type
Unit: mm
4.60.2
For high breakdown voltage high-speed switching 9.90.3 2.90.2

3.00.5
Features 3.20.1

15.00.5
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High-speed switching (Fall time tf is short)
High collector-base voltage (Emitter open) VCBO
Low collector-emitter saturation voltage VCE(sat)
TO-220D built-in: Excellent package with withstand voltage 5 kV

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1.40.2
2.60.1
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Absolute Maximum Ratings TC = 25C
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Parameter Symbol Rating Unit 5.080.50

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1 2 3 1: Base
Collector-base voltage (Emitter open) VCBO 800 V

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Collector-emitter voltage (Base open) VCEO 500 V 3: Emitter

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Emitter-base voltage (Collector open) VEBO 8 V

Collector current IC 3
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A Marking Symbol: C5809
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Peak collector current ICP 6 A

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Internal Connection
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TC = 25C

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Collector power PC 30 W

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Junction temperature Tj 150

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Storage temperature Tstg 55 to +150 C
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Electrical Characteristics TC = 25C 3C

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Parameter Symbol Conditions Min Typ Max Unit

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Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 500 V

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VCB = 800 V, IE = 0 A
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Collector-base cutoff current (Emitter open) ICBO 100

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Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 100 A

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Forward current transfer ratio hFE1 VCE = 5 V, IC = 0.1 A 15

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Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.6 A 0.3 0.6 V

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Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 8 MHz

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Turn-on time ton IC = 3.0 A, Resistance loaded 1.1 s

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Storage time tstg IB1 = 0.6 A, IB2 = 0.6 A 2.0 s

Fall time tf VCC = 200 V 0.3 s
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2002 SJD00291AED 1

 This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5809

PC Ta Safe operation area

35 100
(1) TC = Ta Non repetitive pulse
(1) (2) With a 100 100 2 mm TC = 25C
30 Al heat sink
Collector power dissipation PC (W)

(3) Without heat sink

10 I t = 1 ms

Collector current IC (A)

25 CP

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Thermal resistance Rth (C/W)

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2 SJD00291AED
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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ue e/
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

tin nc
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

d
.
Standards in advance to make sure that the latest specifications satisfy your requirements.

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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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on na
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

cy
defect which may arise later in your equipment.

life
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ct
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

du
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
.se ng ntin tin ty e ty ur
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

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Electric Industrial Co., Ltd.

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