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AN10953

BLF645 10 MHz to 600 MHz 120 W amplifier


Rev. 1 3 March 2011 Application note

Document information
Info Content
Keywords BLF645, broadband
Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for
broadcast transmitter and industrial applications from HF to 1.4 GHz. This
application note describes a broadband amplifier that delivers more than
100 W from 10 MHz to 600 MHz.
NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

Revision history
Rev Date Description
v.1 20110303 initial version

Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 2 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

1. Introduction
The BLF645 is a 100 W LDMOS RF power push-pull transistor for broadcast transmitter
and industrial applications in the HF to 1.4 GHz frequency range. This application note
describes a broadband amplifier which delivers more than 100 W from 10 MHz to
600 MHz.

019aaa994

Fig 1. BLF645 10 MHz to 600 MHz amplifier

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Application note Rev. 1 3 March 2011 3 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

2. Test summary
The RF performance described in Section 3 may be summarized as follows:

Table 1. Summary of RF performance


Item Performance
Specified frequency range 10 MHz to 512 MHz
Specified drain voltage 28 V
Quiescent drain current 1A
Input return loss 5 dB; 15 dB typical
Peak CW power 100 W; 120 W typical
Gain 22.5 dB
Gain flatness 1.8 dB
Efficiency at 100 W 50 %
Efficiency flatness at 100 W 12 %
IMD3 at 100 W PEP 30 dBc typical

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Application note Rev. 1 3 March 2011 4 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

3. RF Performance

3.1 1-Tone CW

019aaa995
200
PL(M)
(W)
160

(1)

120 (2)

80

40

0
10 102 103
f (MHz)

IDq = 1.0 A
(1) VDS = 32 V
(2) VDS = 28 V
Fig 2. Peak output power at 3 dB compression as a function of frequency

019aaa996
30

Gp
(dB) (1)

26

(2)

22

18

14
10 102 103
f (MHz)

VDS = 28 V; Pi = 10 dBm
(1) IDq = 4.0 A
(2) IDq = 1.0 A
Fig 3. Small-signal power gain as a function of frequency

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 5 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aaa997
25 25
G
(dB) (%)
23 (1) 20
(2)

21 15
(3)
(4)

19 10

17 5

15 0
10 102 103
f (MHz)

IDq = 1.0 A; PL = 10 W
(1) gain; VDS = 32 V
(2) gain; VDS = 28 V
(3) efficiency; VDS = 28 V
(4) efficiency; VDS = 32 V
Fig 4. Gain and efficiency as a function of frequency

019aaa998
25 80
G
(dB) (%)
23 70

(1)
21 (2) 60

19 50

(3)
(4)
17 40

15 30
10 102 103
f (MHz)

IDq = 1.0 A; PL = 100 W


(1) gain; VDS = 32 V
(2) gain; VDS = 28 V
(3) efficiency; VDS = 28 V
(4) efficiency; VDS = 32 V
Fig 5. Gain and efficiency as a function of frequency

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 6 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aaa999
24 70

G
(dB) (%)

(1)
22 (2) 50
(3)

20 30
(4)
(5)
(6)

18 10
0 40 80 120 160
PL (W)

VDS = 28 V; IDq = 1.0 A


(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 6. Gain and drain efficiency as a function of output power

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 7 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aab000
24 70

G
(dB) (%)

(1)
22 (2) 50
(3)

20 30

(4)
(5)
(6)

18 10
0 40 80 120 160 200
PL (W)

VDS = 32 V; IDq = 1.0 A


(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 7. Gain and drain efficiency as a function of output power

019aab001
0
IRL
(dB)
5

10

15

20

25
10 102 103
f (MHz)

VDS = 28 V; Pi = 10 dBm; IDq = 1.0 A


Fig 8. Input return loss as a function of frequency

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 8 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aab002
0
(2)
IMD
(dBc)

20

(3)
40
(1)

60

80
10 102 103
f (MHz)

VDS = 50 V; Pi = 10 dBm; IDq = 0.9 A; PL = 100 W


(1) 2nd harmonic level
(2) 3rd harmonic level
(3) system test floor
Fig 9. 2nd and 3rd harmonic levels

Note that the measured 2nd harmonic levels are at the system test limit, so the actual
levels may be significantly lower.

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 9 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

3.2 2-Tone CW

019aab003
24 70

G
(dB) (%)
(1)
(2)
22 (3)
50

(4)
20 (5) 30
(6)

18 10
0 40 80 120 160 200
PL (W)

VD = 28 V; IDq = 1.0 A; f = 100 kHz


(1) gain; f = 20 MHz
(2) gain; f = 100 MHz
(3) gain; f = 500 MHz
(4) efficiency; f = 20 MHz
(5) efficiency; f = 100 MHz
(6) efficiency; f = 500 MHz
Fig 10. 2-tone power gain and efficiency as a function of output power

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 10 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aab004
0

IMD3
(dBc)

(7)
20 (8)
(4) (9)
(5)
(6)

40
(1)
(2)
(3)

60
38 42 46 50 54
PL (dBm)

VD = 28 V; f = 100 kHz
(1) IDq = 1.0 A; f = 20 MHz
(2) IDq = 1.0 A; f = 100 MHz
(3) IDq = 1.0 A; f = 500 MHz
(4) IDq = 2.0 A; f = 20 MHz
(5) IDq = 2.0 A; f = 100 MHz
(6) IDq = 2.0 A; f = 500 MHz
(7) IDq = 4.0 A; f = 20 MHz
(8) IDq = 4.0 A; f = 100 MHz
(9) IDq = 4.0 A; f = 500 MHz
Fig 11. 3rd order intermodulation distortion as a function of output power

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Application note Rev. 1 3 March 2011 11 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

3.3 Alternative input matching


It is possible to improve input return loss at high frequencies by matching the input with a
9:1 transformer constructed with 18 cable, as illustrated in Figure 12. However, this has
the undesired effect of reducing gain flatness and low-frequency gain, so it was not used
in the design described in this application note.

019aab005

Fig 12. 9:1 input transformer

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 12 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

019aab006
0
IRL
(dB)
5

(1)

10

15

(2)
20

25
10 102 103
f (MHz)

VD = 28 V; IDq= 1.0 A; Pi = 10 dBm


(1) 9:1 input transformer
(2) 4:1 input transformer
Fig 13. Input return loss as a function of frequency

019aab007
28
G
(dB)
(2)
24
(1)

20

16

12

8
10 102 103
f (MHz)

VD = 28 V; IDq = 1.0 A; Pi = 10 dBm


(1) 9:1 input transformer
(2) 4:1 input transformer
Fig 14. Small-signal gain as a function of frequency

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 13 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

4. PCB information

C32
R115
D101

C108
C107 L101 C31
R117
R101
R103

C106

R116

R118

C5
U101

C4

C3
R102 C30
C102
C103
R114

C104
U103

L102

R2
R106

C12

C10
C11

C105
D102

U102
R112
R4
C20
R111
R108
E102
R015

R113

T4
C33
T2
R109
C101
C104

Q101
R1 L1

E101 R110

C23
C1 C22

C2 C24
C25

T3
T6 T7

C21
T1 R5
R3
C9
C8

C7

019aab008

(1) PCB is Taconic RF35; r = 3.5 F/m; height = 0.79 mm; Cu thickness = 35 m
(2) T4, T6, and T7 cores are bonded to the baseplate with a thermally-conductive adhesive such as Wakefield DeltaBond 152
Fig 15. PCB layout

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Application note Rev. 1 3 March 2011 14 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

4.1 RF circuit

T1 Input balun = T4, T6 Output 15 4:1 =


55 mm UT047 on 3 2843002402 core 50 mm UT085-15 on 2861000202 core

T2, T3 Input 25 4:1 = T7 Output balun =


50 mm UT047-25 on 2 2843002402 core 80 mm UT085 on 2 2861000202 core

C3 C5 C4
4.7 nF 100 nF 10 F

R2
20
1210 C22
R4 C20

T2 200 510 pF
510 pF T4
C1 input 25 4:1 20 W output 15 4:1 C23 J2
J1 1 Q1 T7 NF
4.7 nF
NF T1 3 4.7 nF
5 BLF645
output
input 4 C25 balun
C2
balun 2
T6 4.7 nF
4.7 nF T3
R5 C21 output 15 4:1
input 25 4:1 C24
200 510 pF
20 W 510 pF

R6 L1
R1 R3 10 8T +28 V @ 10 A GND
10 20 3W 18 AWG TP1 TP2
0.5 W 1210
VG VD
C10 C12 C12 C7 C9 C8 C31 C32 C30 C33
10 F 100 nF 4.7 nF 4.7 nF 100 nF 10 F 4.7 nF 100 nF 10 F 470 F
63 V
019aab009

Fig 16. RF schematic

Table 2. RF circuit bill of materials


Component Description Value Remarks
C1, C2, C3, C7, C11, capacitor, 100 V 5 % NP0, 1210 4.7 nF
C23, C25, C31
C4, C8, C10 capacitor, 10 V 10 % X7R, 1206 10 F
C5, C9, C12 capacitor, 50 V 10 % X7R, 0805 100 nF
C20, C21, C22, C24 capacitor, 500 V 5 % NP0 510 pF ATC 100B
C30 capacitor, 100 V 10 % X7S, 2220 10 F TDK C5750X7S2A106M
C32 capacitor, 100 V 10 % X7R, 1210 100 nF
C33 capacitor, 63 V, alum electrolytic 470 F
L1 8 turns 18AWG on R6
T1 55 mm UT-047 50 coax + input balun
(3) Fair-Rite 2861002402 core
T2, T3 50 mm UT-047 25 coax + 4:1 input transformer
(2) Fair-Rite 2861002402 core
T4, T6 50 mm UT-085C-15 15 coax + 4:1 output transformer
Fair-Rite 2861000202 core
T7 80 mm UT-085 50 coax + 1:1 output balun
(2) Fair-Rite 2861000202 core

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 15 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

Table 2. RF circuit bill of materials


Component Description Value Remarks
R1 resistor, 5 % CC, 0.5 W 10
R2, R3 resistor, 5 % 100 ppm CF, 2010 20
R4, R5 resistor, 5 % 20 W flange-mount 200 ATC FR10300N0200J
R6 resistor, 5 % 3 W MF 10

4.2 Bias circuit


Table 3. Bias circuit bill of materials
Component Description Value Remarks
L101, L102 ferrite bead, 200 mA, 0805 1000
C101, C102 capacitor, 50 V 10 % X7R, 0805 100 nF
C105, C106, D102, not installed
U102, R111, R112, R114,
E101, E102
C103, C104, C107 capacitor, 50 V 10 % X7R, 0805 1 F
C108 capacitor, 100 V 10 % X7R, 1210 2.2 F
D101 LED, green, 1206
U101 voltage regulator Linear LT3010EMS8E
Q101 transistor NPN 45 V 100 mA GP NXP Semiconductors
BC847B
U103 rail-rail opamp National LM7321MF
R106 potentiometer, 5 turns cermet 200
R113, R117, R118 resistor, 1% 100 ppm CF, 0805 10.0 k
R104, R115 resistor, 1% 100 ppm CF, 0805 1.10 k
R105 resistor, 1% 100 ppm CF, 0805 2 k
R102, R103, R108 resistor, 1% 100 ppm CF, 0805 432
R116 resistor, 1% 100 ppm CF, 0805 52.3 k
R109 resistor, 1% 100 ppm CF, 0805 5.11 k
R101 resistor, 1% 100 ppm CF, 0805 0.0
R110 resistor, 1% 100 ppm CF, 0805 909

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Application note Rev. 1 3 March 2011 16 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

VD
L101 U101
BLM21BD102 LT3010EMS8E
IN OUT
8 1
C108 R118 EN ADJ R116 C106 C107 R115
2.2 F 10.0 k 5 2 52.3 k 1 nF 1 F 1.10 k
GND: 4, 9 D101
HSMGC150
R117 green = power
10.0 k

R103 R104 C103 VG


R105 bias monitor/overdrive
432 1.10 k U103 1 F
200 E102 L102
LM7321MF
R105 BLM21BD102
R102 3 5
1 VGATE
432 R108 R113
2.00 k C102 4
2 ground
100 nF E101
R101 432 10.0 k
75.0
C101 R109 C104
100 nF 5.11 k 1 F
3 R111
1 Q101 88.7 k R114
BC847B 1.10 k
2 3 5 D102
1
R110 HSMHC150
909 red = overtemp
C105 R112 400 mV
100 nF 10.0 k
6
4
U102
2 LT6700CS63
019aab010

Fig 17. Bias circuit schematic diagram

5. Abbreviations
Table 4. Abbreviations
Acronym Description
ACPR Adjacent Channel Power Ratio
CCDF Complementary Cumulative Distribution Function
DPD Digital PreDistortion
IBW Integration BandWidth
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MOSFET Metal Oxide Silicon Field Effect Transistor
PAR Peak-to-Average power Ratio
W-CDMA Wideband Code Division Multiple Access

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 17 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

6. Legal information

6.1 Definitions design. It is customers sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customers applications and
products planned, as well as for the planned application and use of
Draft The document is a draft version only. The content is still under
customers third party customer(s). Customers should provide appropriate
internal review and subject to formal approval, which may result in
design and operating safeguards to minimize the risks associated with their
modifications or additions. NXP Semiconductors does not give any
applications and products.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of NXP Semiconductors does not accept any liability related to any default,
use of such information. damage, costs or problem which is based on any weakness or default in the
customers applications or products, or the application or use by customers
third party customer(s). Customer is responsible for doing all necessary
6.2 Disclaimers testing for the customers applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customers third party
Limited warranty and liability Information in this document is believed to
customer(s). NXP does not accept any liability in this respect.
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or Export control This document as well as the item(s) described herein
completeness of such information and shall have no liability for the may be subject to export control regulations. Export might require a prior
consequences of use of such information. authorization from national authorities.
In no event shall NXP Semiconductors be liable for any indirect, incidental, Evaluation products This product is provided on an as is and with all
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contract or any other legal theory. entire risk as to the quality, or arising out of the use or performance, of this
Notwithstanding any damages that customer might incur for any reason product remains with customer.
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changes to information published in this document, including without the use of or inability to use the product, whether or not based on tort
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notice. This document supersedes and replaces all information supplied prior any other theory, even if advised of the possibility of such damages.
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Suitability for use NXP Semiconductors products are not designed,
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malfunction of an NXP Semiconductors product can reasonably be expected
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damage. NXP Semiconductors accepts no liability for inclusion and/or use of
and disclaimers shall apply to the maximum extent permitted by applicable
NXP Semiconductors products in such equipment or applications and
law, even if any remedy fails of its essential purpose.
therefore such inclusion and/or use is at the customers own risk.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no 6.3 Trademarks
representation or warranty that such applications will be suitable for the
specified use without further testing or modification. Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product

AN10953 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Application note Rev. 1 3 March 2011 18 of 19


NXP Semiconductors AN10953
BLF645 10 MHz to 600 MHz 120 W amplifier

7. Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.3 Alternative input matching . . . . . . . . . . . . . . . 12
4 PCB information. . . . . . . . . . . . . . . . . . . . . . . . 14
4.1 RF circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 Bias circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
6.1 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.

NXP B.V. 2011. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 March 2011
Document identifier: AN10953