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IRF7329PbF
HEXFET Power MOSFET
l Trench Technology VDSS RDS(on) max (mW) ID
l Ultra Low On-Resistance
17@VGS = -4.5V 9.2A
l Dual P-Channel MOSFET
-12V 21@VGS = -2.5V 7.4A
l Low Profile (<1.8mm)
l Available in Tape & Reel 30@VGS = -1.8V 4.6A
l Lead-Free
Description
New P-Channel HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per 1 8
S1 D1
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well G1 2 7
D1
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications. S2
3 6
D2
4 5
The SO-8 has been modified through a customized G2 D2
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of Top View SO-8
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJL Junction-to-Drain Lead 20
RJA Junction-to-Ambient 62.5 C/W
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10/7/04
IRF7329PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.007 V/C Reference to 25C, I D = -1mA
RDS(on) Static Drain-to-Source On-Resistance 17 VGS = -4.5V, ID = -9.2A
21 m VGS = -2.5V, ID = -7.4A
30 VGS = -1.8V, ID = -4.6A
VGS(th) Gate Threshold Voltage -0.40 -0.90 V VDS = VGS, ID = -250A
gfs Forward Transconductance 25 S VDS = -10V, ID = -9.2A
IDSS Drain-to-Source Leakage Current -1.0 A VDS = -9.6V, VGS = 0V
-25 VDS = -9.6V, VGS = 0V, TJ = 70C
Gate-to-Source Forward Leakage -100 nA VGS = -8.0V
IGSS
Gate-to-Source Reverse Leakage 100 VGS = 8.0V
Qg Total Gate Charge 38 57 ID = -9.2A
Qgs Gate-to-Source Charge 6.8 10 nC VDS = -6.0V
Qgd Gate-to-Drain ("Miller") Charge 8.1 12 VGS = -4.5V
td(on) Turn-On Delay Time 10 ns V DD = -6.0V
tr Rise Time 8.6 ID = -1.0A
td(off) Turn-Off Delay Time 340 RD = 6.0
tf Fall Time 260 VGS = -4.5V
Ciss Input Capacitance 3450 VGS = 0V
Coss Output Capacitance 1000 pF VDS = -10V
Crss Reverse Transfer Capacitance 640 = 1.0MHz
-2.0
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-37
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by When mounted on 1 inch square copper board.
max. junction temperature.
Pulse width 400s; duty cycle 2%.
2 www.irf.com
IRF7329PbF
100 VGS
100
VGS
TOP -10V TOP -10V
-7.0V -7.0V
-4.5V -4.5V
-3.0V -3.0V
-2.5V -2.5V
-1.8V -1.8V
-1.5V -1.5V
BOTTOM -1.2V BOTTOM -1.2V
10
10
1
-1.2V
-1.2V
2.0
100 ID = -9.2A
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current ()
1.5
(Normalized)
T J = 150C
10 1.0
T J = 25C 0.5
VDS = -10V
20s PULSE WIDTH VGS = -4.5V
1 0.0
1.0 1.4 1.8 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160
5000 10
VGS = 0V, f = 1 MHZ ID = -9.2A
Ciss = Cgs + Cgd, Cds SHORTED VDS =-9.6V
3000 6
2000 4
Coss
1000 Crss 2
0 0
1 10 100 0 10 20 30 40 50 60 70
100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)
100us
-II D , Drain Current (A)
10
TJ = 150 C
10 1ms
1
TJ = 25 C
10ms
TA = 25 C
TJ = 150 C
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)
10.0 RD
VDS
VGS
8.0 D.U.T.
RG
-ID , Drain Current (A)
-
+ VDD
6.0
VGS
Pulse Width 1 s
Duty Factor 0.1 %
4.0
90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response (Z thJA )
0.20
10
0.10
0.05
0.02 PDM
1
0.01 t1
t2
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IRF7329PbF
0.030
RDS(on) , Drain-to -Source On Resistance ()
0.030
0.020
0.020
ID = -9.2A
VGS = -2.5V
0.015
0.015
VGS = -4.5V
0.010
0.0 2.0 4.0 6.0 8.0
0.010
-V GS, Gate -to -Source Voltage (V) 4 6 8 10 12 14
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current
Current Regulator
Same Type as D.U.T.
50K
QG 12V .2F
.3F
-
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit
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IRF7329PbF
1.0
100
-VGS(th) Gate threshold Voltage (V)
0.8
80
ID = -250A
60
Power (W)
0.6
40
0.4
20
0.2
-75 -50 -25 0 25 50 75 100 125 150
0
T J , Temperature ( C ) 0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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IRF7329PbF
e1 K x 45
A
C
y
0.10 [.004]
8X b A1 8X L 8X c
0.25 [.010] C A B 7
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
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IRF7329PbF
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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Mouser Electronics
Authorized Distributor
International Rectifier:
IRF7329PBF IRF7329TRPBF