1. Determine the drain-to-source voltage in the circuit.

The MOSFET data

sheet gives VGS(off) = -8V and IDSS = 12 mA

Solution:
Since ID = IDSS = 12 mA. The drain-to-source voltage is
VDS = VDD IDSSRD = 18V (12mA) (620) = 10.6V

2. Determine VGS and VDS for the E-MOSFET circuit. Assume this particular
MOSFET has minimum values of ID(on) = 200mA at VGS = 4V and VGS(th) = 2V

Solution:
For the E-MOSFET in the circuit, the gate-to-source voltage is
R2
15 k
VGS = R 1+ R 2 ) VDD = ( 115 k ) 24V = 3.13V

To determine VDS. First find K using the minimum value of ID(on) and the
specified voltage values
V
2
( GSV GS ( th )) 200 mA 200 mA 50 mA
K= I D (on) = (4 V 2 V )
2 = (2 V )
2 = V2

Now calculate ID for VGS = 3.13V

V 50 mA
2 2
ID = K ( GSV GS ( th )) =( V2 ) (3.13 V 2)

50 mA
=( 2 ) (1.13 V )2 = 63.8mA
V

Finally, calculate VDS

VDS = VDD IDRD = 24V (63.8mA)(200) = 11.2V
3. (a) For the JFET, VGS(off) = 4 V and IDSS = 12 mA. Determine the minimum
value of VDD required to put the device in the constant-current are of
operation. (b) If VDD is increased to 15 V, what is ID and VDS?

Solution:
(a)
In the constant-current area of operation
VDS(min) = Vp = 4V
If VGS = 0V, IDSS = 12 mA
Therefore, VRD = IDSSRD = 12mA (560)
VDD(min) = VDS(min) + VRD = 4v + 6.72V = 10.72V
(b)
ID remains at approximately 12mA.
 VDS = VDD - VDSSRD = 15 6.72V = 8.28V
4. The JFET has values of VGS(off) = -8 V and IDSS = 16 mA. Determine the
values of VGS, ID and VDS for the circuit.

Solution:
VGS = -VGG = -5V

V GS 2
ID = IDSS (1 )
V GS (off )

5V 2
= 16mA (1 ) = 2.25 mA
8V

VDS = VDD - IDRD

= 16V (2.25mA)(2.2k)
= 5.05V
5. The parameters of the circuit shown in Figure Q1 are VDD = 5 V, R1 = 520
k, R2 = 320 k, RD = 10 k, and RSi = 0. Assume transistor parameters of
mA
VTN = 0.8 V, Kn = 0.20 V 2 , and = 0.

(a) Determine the small-signal parameters gm and ro.

Vo
(b) Find the small-signal voltage gain Vi .

(c) Calculate the input and output resistances Ri and Ro.

Solution:
R2
(a) VGS = ( R 1+ R 2 ) 320
VDD= ( 520+ 320 ) (5) = 1.905V

2
IDQ = 0.20 (1.9050.8) = 0.244mA

mA
Gm = 2 K n I DQ =2 (0.2)(0.244) = 0.442 V

ro =
(b) AV = -gmRD = - (0.422) (10) = -4.22
(c) R1 = R1|| R2 = 520||320 = 198 K
(d) Ro = RD = 10K

6. The parameters for the transistor in the circuit shown in the circuit are VTN
mA
= 0.6 V, Kn = 0.5 V 2 and = 0. (a) Determine the quiescent values of IDQ

Vo
and VDSQ ,(b) Find the smallsignal voltage gain Vi .
Solution:
(a)
R2
VG = ( R 1+ R 2 ) 250
(10) 5 = ( 250+1000 ) (10) 5 = -3V

V
( GV GS )(5) V
ID = 2 = Kn ( G SV )2

V
2
-3-VGS + 5 = 2(0.5) ( GS0.6)

2 VGS = V2GS 1.2VGS + 0.36

V2GS 0.2VGS 1.64 = 0

0.2 ( 0.04 ) + 4(1.64)

VGS = 2 = 1.385V

2
IDQ = (0.5) (1.3850.6) IDQ = 0.308 mA

VDSQ = 10 (0.308)(10+2) V DSQ = 6.30 V

(b)

gm R D
AV = 1+ g m R s gm = 2 K n I DQ =2 (0.5)(0.308)
 mA
gm = 0.7849 V

( 0.7849)(10)
AV = 1+(0.7849)(2) AV = -3.05

7. Select resistor values in the circuit to set up an approximate midpoint

bias. The JFET parameters are: IDSS = 15 mA and VGS (off) = 8V. The voltage VD
should be 6V (one-half of VDD).

Solution:
For midpoint bias, we have.
I D SS 15 mA
ID = 2 = 2 = 7.5 mA

V GS (off ) 8
and VGS = 3.4 = 3.4 = -2.35V

I D
2.35V
RS = V GS = 7.5 mA = 313

Now VD = VDD - IDRD

V DD R D 12 V 6 V
RD = ID = 7.5 mA = 800
8. The Circuit shows two stages of JFET amplifier. The first stage has ID =
2.15mA and the second stage has ID = 9.15mA. Find the d.c. voltage of drain
and source of each stage w.r.t. ground.

Solution:
Voltage drop in 8.2 k = 2.15mA x 8.2k = 17.63V
D.C. potential of drain of first stage w.r.t ground is
VD = VDD 17.63 = 30 17.63 = 12.37V
D.C. potential of source of first stage to ground is
VS = IDRS = 2.15mA x 0.68k = 1.46V
Voltage drop in 2k = 9.15mA x 2k = 18.3V
D.C. potential of drain of second stage to ground is
VD = VDD 18.3 = 30 18.3 = 11.7V