AOP610

Complementary Enhancement Mode Field Effect Transistor

General Description Features

The AOP610 uses advanced trench n-channel p-channel
technology MOSFETs to provide excellent VDS (V) = 30V -30V
RDS(ON) and low gate charge. The ID = 7.7A (VGS=10V) -6.2A (V GS=10V)
complementary MOSFETs may be used to RDS(ON) RDS(ON)
form a level shifted high side switch, and for a < 24m (VGS=10V) < 39m (VGS = -10V)
host of other applications. A Schottky diode in < 42m (VGS=4.5V) < 56m (VGS = -4.5V)
parallel with the n-channel FET reduces body
diode related losses. It is ESD protected. ESD rating: 2000V (HBM)
Standard product AOP610 is Pb-free (meets
ROHS & Sony 259 specifications). AOP610L
is a Green Product ordering option. AOP610
and AOP610L are electrically identical.

PDIP-8 D2 D1
K2

S2/A 1 8 D2/K
N-ch G2 G1
G2 2 7 D2/K
S1 3 6 D1
4 5 P-ch A2
G1 D1
S2 S1

n-channel p-channel
Absolute Maximum Ratings T A=25C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain TA=25C 7.7 -6.2
A
Current TA=70C ID 6.1 -4.9 A
Pulsed Drain Current B IDM 30 -30
TA=25C 2.3 2.3
PD W
Power Dissipation TA=70C 1.45 1.45
B
Avalanche Current IAR 10 15 A
B
Repetitive avalanche energy 0.3mH EAR 15 33 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 C

Thermal Characteristics: n-channel+schottky and p-channel

Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s n-ch 45 55 C/W
RJA
Maximum Junction-to-Ambient A Steady-State n-ch 78 95 C/W
C
Maximum Junction-to-Lead Steady-State RJL n-ch 30 40 C/W
A
Maximum Junction-to-Ambient t 10s p-ch 38.5 55 C/W
RJA
Maximum Junction-to-Ambient A Steady-State p-ch 78 95 C/W
Maximum Junction-to-Lead C Steady-State RJL p-ch 28 40 C/W

Alpha & Omega Semiconductor, Ltd.

AOP610

N-Channel+Schottky Electrical Characteristics (T J=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=24V, VGS=0V 2 50
IDSS Zero Gate Voltage Drain Current A
TJ=55C 125
IGSS Gate-Body leakage current VDS=0V, VGS=12V 10 A
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 2 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, I D=7.7A 20 24
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 29 35
VGS=4.5V, I D=4A 32 42 m
gFS Forward Transconductance VDS=5V, ID=7.7A 10 18 S
VSD Diode Forward Voltage IS=1A 0.5 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 543 630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 142 pF
Crss Reverse Transfer Capacitance 76 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.1 3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 15 nC
Qg(4.5V) Total Gate Charge 5.3 7 nC
VGS=10V, VDS=15V, I D=7.7A
Qgs Gate Source Charge 1.9 nC
Qgd Gate Drain Charge 4 nC
tD(on) Turn-On DelayTime 4.7 7 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.9, 4.9 10 ns
tD(off) Turn-Off DelayTime RGEN=3 16.2 22 ns
tf Turn-Off Fall Time 3.5 7 ns
trr Body Diode Reverse Recovery Time IF=7.7A, dI/dt=100A/s 15.7 20 ns
Qrr Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/s 7.9 10 nC
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
F. Rev 3: Jul 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 5V 4.5V
25 VDS=5V
16
4V
20
12
ID (A)

ID(A)
15
3.5V 8
10 125C

4
5 VGS=3V
25C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.6

VGS=4.5V 1.5
Normalized On-Resistance

35 VGS=10V
1.4 ID=7.7A
30
1.3
RDS(ON) (m)

25 1.2 VGS=4.5V
ID=4A
1.1
20
1
15 VGS=10V 0.9

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (Amps) Temperature ( C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

70 1.0E+01
ID=7.7A
60 125C
1.0E+00
50
IS Amps
RDS(ON) (m)

125C
1.0E-01 25C
40

30
1.0E-02

20 25C

1.0E-03
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts)
Figure 6: Body diode characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOP610

N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
900 f=1MHz
VDS=15V
VGS=0V
8 ID=7.7A 800
Ciss

Capacitance (pF)
700
600
VGS (Volts)

6
500
4 400
Coss
300
2 200
100
Crss
0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 20
TJ(Max)=150C
RDS(ON) TJ(Max)=150C
TA=25C
limited TA=25C
100s 15
10 1ms 10s
ID (Amps)

Power W

10ms
10
0.1s

1
1s
5
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=55C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AOP610

P-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS=12V 10 A
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1 -1.8 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 30 A
VGS=-10V, I D=-6.2A 32 39
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 43 52
VGS=-4.5V, I D=4A 45 56 m
gFS Forward Transconductance VDS=-5V, ID=-6.2A 12.5 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1040 1250 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 179 pF
Crss Reverse Transfer Capacitance 134 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 5 10
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 16.8 22 nC
Qg(4.5V) Total Gate Charge (4.5V) 8.7 12 nC
VGS=-10V, VDS=-15V, I D=-6.2A
Qgs Gate Source Charge 3.4 nC
Qgd Gate Drain Charge 5 nC
tD(on) Turn-On DelayTime 9 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.5, 5.7 11 ns
tD(off) Turn-Off DelayTime RGEN=3 22.7 30 ns
tf Turn-Off Fall Time 10.2 20 ns
trr Body Diode Reverse Recovery Time IF=-6.2A, dI/dt=100A/s 21.7 27 ns
Qrr Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/s 13.6 18 nC

A: The value of R JA
JA
is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25C. The value in
any given application depends on
value in any a given application the user's
depends specific
on the user'sboard design.
specific The
board current
design. Therating is based
current ratingon the t 10s
is based thermal
on the t 10sresistance rating. rating.
thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA
JA
is the sum of the thermal impedence from junction to lead RJL JL
and lead to ambient. RJL and RJC are equivalent terms referring to
thermal
D. resistance
The static from junction
characteristics to drain
in Figures lead.
1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max.
D. These
E. The static
testscharacteristics
are performedinwith
Figures 1 to 6,12,14
the device mountedare on
obtained using
1 in2 FR-4 80swith
board pulses,
2oz.duty cyclein0.5%
Copper, a stillmax.
air environment with TA=25C. The SOA
E. These
curve tests are
provides performed
a single with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
pulse rating.
provides a single pulse rating.
F. Rev 3: Jul 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25
-10V
-4.5V VDS=-5V
25 -6V 20
-4V
-5V
20
15
-ID (A)

-ID(A)
15 -3.5V
10
10
VGS=-3V 125C
5
5
-2.5V 25C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

90 1.60

80 VGS=-10V
Normalized On-Resistance

1.40 ID=-6.2A
70
VGS=-4.5V VGS=-4.5V
RDS(ON) (m)

60 ID=-4A
1.20
50

40 1.00
VGS=-10V
30
0.80
20
0 5 10 15 20 25 0 25 50 75 100 125 150 175

-ID (A) Temperature (C)

Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

100 1.0E+01

90 ID=-6.2A
1.0E+00
80
1.0E-01
70
125C
RDS(ON) (m)

60 1.0E-02
-IS (A)

125C
50 1.0E-03
40
1.0E-04
30 25C 25C
1.0E-05
20

10 1.0E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOP610

P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=-15V
ID=-6.2A 1250
8
Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
750
4
500 Coss
Crss
2
250

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150C, TA=25C TJ(Max)=150C
TA=25C
RDS(ON) 10s 30
10.0 100s
limited
Power (W)
-ID (Amps)

0.1s 1ms
20
10ms
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=55C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.