TPC8016-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)

TPC8016-H
High Speed and High Efficiency DC-DC Converters
Unit: mm
Notebook PC Applications
Portable Equipment Applications

Small footprint due to small and thin package

High speed switching
Small gate charge: Qg = 48 nc (typ.)
Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.)
High forward transfer admittance: |Yfs| = 25 S (typ.)
Low leakage current: IDSS = 10 A (max) (V DS = 30 V)
Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage V DSS 30 V

Drain-gate voltage (RGS = 20 k) V DGR 30 V

Gate-source voltage V GSS 20 V JEDEC ?

DC (Note 1) ID 15 JEITA ?
Drain current A
Pulsed (Note 1) IDP 60 TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
PD 1.9 W Weight: 0.080 g (typ.)
(Note 2a)
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
Single pulse avalanche energy Circuit Configuration
EA S 146 mJ
(Note 3) 8 7 6 5
Avalanche current IAR 15 A
Repetitive avalanche energy
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 C

Storage temperature range Tstg 55 to 150 C

1 2 3 4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8016 Type
H
Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 25.4 0.8 25.4 25.4 0.8
(unit: mm) (unit: mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, R G = 25 , IAR = 15 A

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: on lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

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 TPC8016-H
Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V GS = 16 V, V DS = 0 V 10 A

Drain cut-OFF current IDSS V DS = 30 V, V GS = 0 V 10 A
V (BR) DSS ID = 10 mA, V GS = 0 V 30
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, V GS = 20 V 15
Gate threshold voltage V th V DS = 10 V, ID = 1 mA 1.1 2.3 V
V GS = 4.5 V , ID = 7.5 A 5.5 7.5
Drain-source ON resistance RDS (ON) m
V GS = 10 V , ID = 7.5 A 3.7 5.7
Forward transfer admittance |Yf s | V DS = 10 V , ID = 7.5 A 12.5 25 S
Input capacitance Ciss 2380
Reverse transfer capacitance Crss V DS = 10 V , V GS = 0 V , f = 1 MHz 410 pF

Output capacitance Coss 980

Rise time tr 9.8

10 V ID = 7.5 A
V GS V OUT
Turn-ON time ton 0V 21

RL = 2
Switching time 4.7 ns
Fall time tf 15

V DD
15 V
Turn-OFF time toff < 60
Duty = 1%, tw = 10 s

Total gate charge 24 V, V GS = 10 V , ID = 15 A

V DD 46
Qg
(gate-source plus gate-drain)
24 V, V GS = 5 V , ID = 15 A
V DD 26
Gate-source charge 1 Qgs1 7.2 nC

Gate-drain (miller) charge Qgd 24 V, V GS = 10 V , ID = 15 A

V DD 12.2
Gate switch charge QSW 15.6

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP 60 A

Forward voltage (diode) V DSF IDR = 15 A, V GS = 0 V 1.2 V

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ID V DS ID V DS
10 20
Common source Common source
4.5 3.2 3.15 4.5 3.5 3.3
Ta = 25C, pulse test Ta = 25C, pulse test
10 3.1 10
8 3.5 16

(A)
3.2
(A)

3.05

Drain current D
ID

I
12
3.0
Drain current

3.1

4 8
2.9 3.0

2 2.8 4 2.9

VGS = 2.7 V VGS = 2.8 V

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID V GS V DS V GS
50 1
Common source Common source
VDS = 10 V Ta = 25C
Pulse test Pulse test
VDS (V)

40 0.8
(A)
Drain current D

30 0.6
I

Drain-source voltage

20 0.4

25
ID = 15 A
10 0.2
100 7.5
Ta = 55C
3.8
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10 12

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yf s | ID RDS (ON) ID

100 100
(S)

Common source
Ta = 25C
Yfs

Drain-source ON resistance

Pulse test
Ta = 55C
Forward transfer admittance

R DS (ON) (m)

10 25

100

10

VGS = 4.5 V

1 10

Common source
VDS = 10 V
Pulse test
0.1 1
0.1 1 10 30 0.1 1 10 100

Drain current D
I (A) Drain current D
I (A)

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RDS (ON) Ta IDR V DS

12 100

(A)
10 10
Drain-source ON resistance

Drain reverse current DR

3

I
R DS (ON) (m)

8 10
ID = 15, 7.5, 3.8 A VGS = 0 V
1
6
VGS = 4.5 V

4 ID = 15, 7.5, 3.8 A 1

10
2 Common source
Common source Ta = 25C
Pulse test Pulse test
0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1

Ambient temperature Ta (C) Drain-source voltage VDS (V)

Capacitance V DS V th Ta
10000 2.5
Gate threshold voltage Vth (V)

Ciss 2
(pF)

1000
Coss 1.5
C

Crss
Capacitance

1
100

Common source
0.5 V
Common source DS = 10 V
VGS = 0 V
ID = 1 mA
f = 1 MHz
Ta = 25C Pulse test
10 0
0.1 1 10 100 80 40 0 40 80 120 160

Drain-source voltage VDS (V) Ambient temperature Ta (C)

PD Ta Dynamic input/output characteristics

2 40 16
(1) Device mounted on a Common source
(1) glass-epoxy board (a) Ta = 25C
14
(W)

(Note 2a) ID = 15 A
VDS (V)

VGS (V)

1.6 (2) Device mounted on a Pulse test

glass-epoxy board (b) 30 12
Drain power dissipation PD

(Note 2b )
VDD = 24 V 6
t = 10 s 10
Drain-source voltage

1.2
Gate-source voltage

VDD = 24 V
(2) 12
20 8

VDS VGS
0.8
6
12

10 4
0.4 6
2

0 0 0
0 50 100 150 200 0 10 20 30 40 50 60

Ambient temperature Ta (C) Total gate charge Qg (nC)

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 TPC8016-H

r th tw
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a) (2)
Normalized transient thermal impedance
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
100
(1)
r th (C/W)

10

Single pulse
0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

100

ID max (plused) *
1 ms*

10
10 ms*
(A)
Drain current D
I

0.1
* Single pulse
Ta = 25C
Curves must be derated
linearly with increase in VDSS max
temperature.
0.01
0.01 0.1 1 10 100

Drain-source voltage VDS (V)

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RESTRICTIONS ON PRODUCT USE 000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the mos t recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own ris k.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

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