SIPMOS Small-Signal Transistor BSS 229

VDS 250 V
ID 0.07 A
RDS(on) 100
N channel
Depletion mode
High dynamic resistance 3
Available grouped in VGS(th) 2
1

Type Ordering Tape and Reel Pin Configuration Marking Package

Code Information 1 2 3
BSS 229 Q62702-S600 E6296: 1500 pcs/reel; G D S SS229 TO-92
2 reels/carton; source first

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage VDS 250 V
Drain-gate voltage, RGS = 20 k VDGR 250
Gate-source voltage VGS 14
Gate-source peak voltage, aperiodic Vgs 20
Continuous drain current, TA = 25 C ID 0.07 A
Pulsed drain current, TA = 25 C ID puls 0.21
Max. power dissipation, TA = 25 C Ptot 0.63 W
Operating and storage temperature range Tj, Tstg 55 + 150 C

Thermal resistance, chip-ambient RthJA 200 K/W

(without heat sink)
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/150/56

Semiconductor Group 1 04.97

 BSS 229

Electrical Characteristics
at Tj = 25 C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 3 V, ID = 0.25 mA 250
Gate threshold voltage VGS(th)
VDS = 3 V, ID = 1 mA 1.8 1.4 0.7
Drain-source cutoff current IDSS
VDS = 250 V, VGS = 3 V
Tj = 25 C 100 nA
Tj = 125 C 200 A
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 10 100
Drain-source on-resistance RDS(on)
VGS = 0 V, ID = 0.014 A 75 100

Dynamic Characteristics
Forward transconductance gfs S
VDS 2 ID RDS(on)max, ID = 0.07 A 0.05 0.10
Input capacitance Ciss pF
VGS = 0, VDS = 25 V, f = 1 MHz 85 120
Output capacitance Coss
VGS = 0, VDS = 25 V, f = 1 MHz 6 10
Reverse transfer capacitance Crss
VGS = 0, VDS = 25 V, f = 1 MHz 2 3
Turn-on time ton, (ton = td(on) + tr) td(on) 4 6 ns
VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , tr 10 15
ID = 0.15 A
Turn-off time toff, (toff = td(off) + tf) td(off) 10 13
VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 , tf 15 20
ID = 0.15 A

Semiconductor Group 2
 BSS 229

Electrical Characteristics (contd)

at Tj = 25 C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous reverse drain current IS A
TA = 25 C 0.07
Pulsed reverse drain current ISM
TA = 25 C 0.21
Diode forward on-voltage VSD V
IF = 0.14 A, VGS = 0 0.8 1.2

VGS(th) Grouping Symbol Limit Values Unit Test Condition

min. max.
Range of VGS(th) VGS(th) 0.15 V
1)
Threshold voltage selected in groups: VGS(th) VDS1 = 0.2 V;
F 1.535 1.385 V VDS2 = 3 V;
G 1.635 1.485 V ID = 10 A
A 1.735 1.585 V
B 1.835 1.685 V
C 1.935 1.785 V
D 2.035 1.885 V
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.

Semiconductor Group 3
 BSS 229

Characteristics
at Tj = 25 C, unless otherwise specified.
Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 C

Typ. output characteristics ID = f (VDS) Typ. drain-source on-resistance

parameter: tp = 80 s RDS(on) = f (ID)
parameter: VGS

Semiconductor Group 4
 BSS 229

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s, VDS 2 ID RDS(on)max. parameter: VDS 2 ID RDS(on)max., tp = 80 s

Drain-source on-resistance Typ. capacitances C = f (VDS)

RDS(on) = f (Tj) parameter: VGS = 0, f = 1 MHz
parameter: ID = 0.014 A, VGS = 0 V, (spread)

Semiconductor Group 5
 BSS 229

Gate threshold voltage VGS(th) = f (Tj) Forward characteristics of reverse diode

parameter: VDS = 3 V, ID = 1 mA, (spread) IF = f (VSD)
parameter: tp = 80 s, Tj, (spread)

Drain current ID = f (TA) Drain-source breakdown voltage

parameter: VGS 3 V V(BR) DSS = b V(BR)DSS (25 C)

Semiconductor Group 6
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