DISCRETE SEMICONDUCTORS

DATA SHEET

BSS83
MOSFET N-channel enhancement
switching transistor
Product specification April 1991
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

DESCRIPTION Marking code:

Symmetrical insulated-gate silicon BSS83 = M74
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
handbook, halfpage
4 3
d
APPLICATIONS b
g s
analog and/or digital switch
switch driver 1 2

Top view MAM389

PINNING
1 = substrate (b)
2 = source
3 = drain
4 = gate
Fig.1 Simplified outline and symbol.
Note
1. Drain and source are
interchangeable.

QUICK REFERENCE DATA

Drain-source voltage VDS max. 10 V
Source-drain voltage VSD max. 10 V
Drain-substrate voltage VDB max. 15 V
Source-substrate voltage VSB max. 15 V
Drain current (DC) ID max. 50 mA
Total power dissipation up to Tamb = 25 C Ptot max. 230 mW
Gate-source threshold voltage
VDS = VGS; VSB = 0; > 0.1 V
VGS(th)
ID = 1 A < 2.0 V
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID = 0.1 mA RDSon < 45
Feed-back capacitance
VGS = VBS = 15 V;
VDS = 10 V; f = 1 MHz Crss typ. 0.6 pF

April 1991 2
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage VDS max. 10 V
Source-drain voltage VSD max. 10 V
Drain-substrate voltage VDB max. 15 V
Source-substrate voltage VSB max. 15 V
Drain current (DC) ID max. 50 mA
Total power dissipation up to Tamb = 25 C(1) Ptot max. 230 mW
Storage temperature range Tstg 65 to + 150 C
Junction temperature Tj max. 125 C

THERMAL RESISTANCE
From junction to ambient in free air(1) Rth j-a = 430 K/W

April 1991 3
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

CHARACTERISTICS
Tamb = 25 C unless otherwise specified
Drain-source breakdown voltage
VGS = VBS = 5 V; ID = 10 nA V(BR)DSX > 10 V
Source-drain breakdown voltage
VGD = VBD = 5 V; ID = 10 nA V(BR)SDX > 10 V
Drain-substrate breakdown voltage
VGB = 0; ID = 10 nA; open source V(BR)DBO > 15 V
Source-substrate breakdown voltage
VGB = 0; ID = 10 nA; open drain V(BR)SBO > 15 V
Drain-source leakage current
VGS = VBS = 2 V; VDS = 6,6 V IDSoff < 10 nA
Source-drain leakage current
VGD = VBD = 2 V; VSD = 6,6 V ISDoff < 10 nA
Forward transconductance at f = 1 kHz
VDS = 10 V; VSB = 0; ID = 20 mA > 10 mS
gfs
typ. 15 mS
Gate-source threshold voltage
VDS = VGS; VSB = 0; ID = 1 A > 0,1 V
VGS(th)
< 2,0 V
Drain-source ON-resistance
ID = 0,1 mA;
VGS = 5 V; VSB = 0 RDSon < 70
VGS = 10 V; VSB = 0 RDSon < 45
VGS = 3,2 V; VSB = 6,8 V (see Fig.4) typ. 80
RDSon
< 120
Gate-substrate zener voltages
VDB = VSB = 0; IG = 10 A VZ(1) > 12,5 V
VDB = VSB = 0; +IG = 10 A VZ(2) > 12,5 V
Capacitances at f = 1 MHz
VGS = VBS = 15 V; VDS = 10 V
Feed-back capacitance Crss typ. 0,6 pF
Input capacitance Ciss typ. 1,5 pF
Output capacitance Coss typ. 1,0 pF
Switching times (see Fig.2)
VDD = 10 V; Vi = 5 V ton typ. 1,0 ns
toff typ. 5,0 ns

Note
1. Device mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.

April 1991 4
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

Pulse generator:
Ri = 50
tr < 0,5 ns
tf < 1,0 ns
tp = 20 ns
< 0,01

handbook, full pagewidth 90% 90%

50 0.1 F
VDD Vo INPUT

630 10% 10%

tr tf
ton toff
Vi T.U.T
90% 90%
50
OUTPUT

MBK297 10% 10%

MBK296

Fig.2 Switching times test circuit and input and output waveforms.

MDA250 MDA251
60 1.2
handbook, halfpage handbook, halfpage

ID VGS = 4.5 V ID VGS = 10 V 5V 4V 3.2 V

(mA) (mA) 3V
4V

40 0.8
3.5 V

3V

2.5 V
20 0.4

2V
2V

0 0
0 4 8 12 0 40 80 120
VDS (V) VDSon (mV)

Tj = 25 C. Tj = 25 C.

Fig.3 VSB = 0; typical values. Fig.4 VSB = 6,8 V; typical values.

April 1991 5
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

MDA252 MDA253
50 12
handbook, halfpage handbook, halfpage
ID
(mA) ID VSB = 0 V 4 V 12 V
40 (mA) 8V

8
30

20
4

10

0 0
0 1 2 3 4 0 1 2 3 4
VGS (V) VGSth (V)

Tj = 25 C. Tj = 25 C.

Fig.5 VDS = 10 V; VBS = 0; typical values. Fig.6 VDS = VGS = VGS(th).

MDA254
1.2
handbook, halfpage
VGS =
ID 10 V 5 V 4 V 3V 2V
(mA)

0.8

0.4

0
0 20 40 60 80 100
VDSon (mV)

Tj = 25 C.

Fig.7 VSB = 0; typical values.

April 1991 6
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads SOT143B

D B E A X

y
v M A HE

e
bp w M B

4 3

A1

c
1 2
Lp
b1
e1 detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.1 0.48 0.88 0.15 3.0 1.4 2.5 0.45 0.55
mm 1.9 1.7 0.2 0.1 0.1
0.9 0.38 0.78 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT143B 97-02-28

April 1991 7
Philips Semiconductors Product specification

MOSFET N-channel enhancement switching transistor BSS83

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

April 1991 8